CN111224001B - Quantum dot light-emitting diode and preparation method thereof - Google Patents
Quantum dot light-emitting diode and preparation method thereof Download PDFInfo
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- CN111224001B CN111224001B CN201811426477.0A CN201811426477A CN111224001B CN 111224001 B CN111224001 B CN 111224001B CN 201811426477 A CN201811426477 A CN 201811426477A CN 111224001 B CN111224001 B CN 111224001B
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Abstract
The invention discloses a quantum dot light-emitting diode and a preparation method thereof, wherein the quantum dot light-emitting diode comprises: the hole transport layer comprises a first P-type zinc sulfide nanoparticle and phosphorus alkene, wherein the surface layer of the first P-type zinc sulfide nanoparticle is doped with a P element, and the phosphorus alkene is combined on the surface of the first P-type zinc sulfide nanoparticle. The surface layer of the first P-type zinc sulfide nano-particles is doped with the P element, and the P element replaces the S element to form P-type doping, so that the effect of improving hole sites can be achieved, the hole concentration is improved, and the hole transmission performance is improved.
Description
Technical Field
The invention relates to the field of quantum dot light-emitting devices, in particular to a quantum dot light-emitting diode and a preparation method thereof.
Background
The quantum dot light emitting diode is expected to become a new generation of excellent display technology due to the advantages of high luminous efficiency, high color purity, narrow light emitting spectrum, adjustable emission wavelength and the like, and the current technology for limiting the development of the quantum dot light emitting diode mainly has the defects of short service life and poor stability of a device, wherein the most important problem is that a hole transport layer in a device structure has low efficiency and cannot be balanced with electron transport efficiency, so that the luminous efficiency is low.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, an object of the present invention is to provide a quantum dot light emitting diode and a method for manufacturing the same, which aims to solve the problem of low light emitting efficiency caused by too low efficiency of a hole transport layer in the conventional quantum dot light emitting diode and failure of balancing with electron transport efficiency.
The technical scheme of the invention is as follows:
a quantum dot light emitting diode comprising: the hole transport layer comprises a first P-type zinc sulfide nanoparticle and phospholene, wherein the surface layer of the first P-type zinc sulfide nanoparticle is doped with P element, and the phospholene is combined on the surface of the first P-type zinc sulfide nanoparticle.
A preparation method of a quantum dot light-emitting diode comprises the following steps:
providing a substrate;
providing a mixed solution containing first P-type zinc sulfide nanoparticles and phospholene, wherein the surface layers of the first P-type zinc sulfide nanoparticles are doped with P elements;
and depositing the mixed solution on a substrate to form a film, thereby forming a hole transport layer.
Has the advantages that: according to the invention, the hole transport layer material comprises first P-type zinc sulfide nanoparticles and phospholene, the surface layer of the first P-type zinc sulfide nanoparticles is doped with P elements, and the P elements substitute for S elements to form P-type doping, so that the effect of improving hole sites can be achieved, the hole concentration is improved, and the hole transport performance is improved. The P element on the surface layer of the first P-type zinc sulfide nano-particle can be combined with the phospholene by van der Waals force to form ZnP-P acting force. The phospholene can be used as a bridge to connect the first p-type zinc sulfide nanoparticles, so that the hole transmission efficiency among materials is improved, and the effect of the hole transmission performance of the materials is further improved.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present invention.
Detailed Description
The invention provides a quantum dot light-emitting diode and a preparation method thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides a quantum dot light-emitting diode, which comprises: the hole transport layer comprises a first P-type zinc sulfide nanoparticle and phospholene, wherein the surface layer of the first P-type zinc sulfide nanoparticle is doped with P element, and the phospholene is combined on the surface of the first P-type zinc sulfide nanoparticle.
In this embodiment, the hole transport layer material includes first P-type zinc sulfide nanoparticles and phospholene, the surface layer of the first P-type zinc sulfide nanoparticles is doped with a P element, and the P element replaces an S element to form a P-type doping, so that an effect of improving a hole site can be achieved, the hole concentration is improved, and the hole transport performance is improved.
In the present embodiment, the quantum dot light emitting diode has various forms, and the quantum dot light emitting diode has a positive type structure and an inverse type structure, and the present embodiment will be described in detail mainly by taking the quantum dot light emitting diode with the positive type structure as shown in fig. 1 as an example. Specifically, as shown in fig. 1, the quantum dot light emitting diode includes a substrate 1, an anode 2, a hole transport layer 3, a quantum dot light emitting layer 4, an electron transport layer 5, and a cathode 6, which are stacked from bottom to top; the hole transport layer 3 material comprises first P-type zinc sulfide nanoparticles and phosphoalkene, wherein the surface layers of the first P-type zinc sulfide nanoparticles are doped with P elements, and the phosphoalkene is combined on the surfaces of the first P-type zinc sulfide nanoparticles. The hole transport layer material comprises first P-type zinc sulfide nanoparticles and phospholene, wherein a P element is doped on the surface layer of the first P-type zinc sulfide nanoparticles, and replaces an S element to form P-type doping, so that the effect of improving hole sites can be achieved, the hole concentration is improved, and the hole transport performance is improved.
In a preferred embodiment, the hole transport layer material comprises first p-type zinc sulfide nanoparticles and a phospholene dispersed between a plurality of first p-type zinc sulfide nanoparticles, the plurality of first p-type zinc sulfide nanoparticles being linked by the phospholene. The P element on the surface of the first P-type zinc sulfide nano-particles can be combined with the phospholene by van der Waals force to form ZnP-P acting force, and the plurality of first P-type zinc sulfide nano-particles are connected through the phospholene. The phosphorus alkene is combined with P elements on the surface layers of the first P-type zinc sulfide nano particles on the periphery, and can be used as a bridge to connect the P-type zinc sulfide nano particles on the periphery, so that the hole transmission efficiency among the nano particles is further improved, and the effect of the hole transmission performance of the material is further improved. It is understood that when the size of the phosphenes is smaller, there are fewer p-type zinc sulfide nanoparticles attached; it is understood that when the size of the phospholene is larger, more p-type zinc sulfide nanoparticles are linked,
In a preferred embodiment, the zinc sulfide nanoparticles are selected from one or more of zinc sulfide nanorods, zinc sulfide nanospheres, zinc sulfide nanosheets, and the like.
In a preferred embodiment, the particle size of the zinc sulfide nano microsphere is 5-20 nm.
Further in a preferred embodiment, the size of the zinc sulfide nanorods is 5-20 nm.
Further in a preferred embodiment, the zinc sulfide nanosheets are 5-20nm in size.
In a further preferred embodiment, the size of the phospholene is a monomolecular layer or a polymolecular layer structure with the size of 2-50nm, and the thickness is 1-100 atomic layers. Preferably, the size of the phospholene is a monomolecular layer or a polymolecular layer structure with the size of 10-40nm or less.
In a preferred embodiment, the hole transport layer has a thickness of 30 to 100 nm. If the thickness of the hole transport layer is too thin, the transport performance of a current carrier cannot be ensured, so that holes cannot reach the quantum dot light-emitting layer to cause hole-electron recombination of the transport layer, and quenching is caused; if the thickness of the hole transport layer is too thick, light transmittance of the film layer is reduced, and carrier permeability of the device is reduced, resulting in a reduction in the conductivity of the entire device.
In this embodiment, the substrate may be a rigid substrate, such as glass, or a flexible substrate, such as one of PET or PI.
In this embodiment, the anode may be selected from one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), and the like.
In this embodiment, the quantum dots of the quantum dot light emitting layer may be selected from one of common red, green, and blue quantum dots, or may be yellow quantum dots. Specifically, the quantum dot may be at least one selected from CdS, CdSe, CdTe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, CuInS, CuInSe, and various core-shell structured quantum dots or alloy structured quantum dots. The quantum dots may be cadmium-containing or cadmium-free. The quantum dot light emitting layer has the characteristics of wide and continuous excitation spectrum distribution, high emission spectrum stability and the like.
In this embodiment, the material of the electron transport layer may be selected from materials with good electron transport properties, such as but not limited to n-type ZnO, TiO2、Fe2O3、SnO2、Ta2O3One or more of AlZnO, ZnSnO, InSnO and the like.
In this embodiment, the cathode may be selected from one of an aluminum (Al) electrode, a silver (Ag) electrode, a gold (Au) electrode, and the like, and may also be selected from one of a nano aluminum wire, a nano silver wire, a nano gold wire, and the like.
It should be noted that the quantum dot light emitting diode of the present invention may further include one or more of the following functional layers: a hole injection layer arranged between the hole transport layer and the anode, and an electron injection layer arranged between the electron transport layer and the cathode.
The embodiment of the invention also provides a preparation method of the quantum dot light-emitting diode, wherein the preparation method comprises the following steps:
providing a substrate;
providing a mixed solution containing first P-type zinc sulfide nanoparticles and phospholene, wherein the surface layers of the first P-type zinc sulfide nanoparticles are doped with P elements;
and depositing the mixed solution on a substrate to form a film, thereby forming a hole transport layer.
In this embodiment, the quantum dot light emitting diode has a positive structure and an inverse structure. The positive structure comprises an anode, a cathode and a quantum dot light emitting layer, wherein the anode, the cathode and the quantum dot light emitting layer are arranged in a stacked mode, the anode of the positive structure is arranged on the substrate, hole function layers such as a hole transmission layer, a hole injection layer and an electron blocking layer can be further arranged between the anode and the quantum dot light emitting layer, and electronic function layers such as an electron transmission layer, an electron injection layer and a hole blocking layer can be further arranged between the cathode and the quantum dot light emitting layer. The reflection structure comprises an anode, a cathode and a quantum dot light emitting layer, wherein the anode and the cathode are arranged in a stacked mode, the quantum dot light emitting layer is arranged between the anode and the cathode, the cathode of the reflection structure is arranged on the substrate, hole function layers such as a hole transmission layer, a hole injection layer and an electron blocking layer can be further arranged between the anode and the quantum dot light emitting layer, and electronic function layers such as an electron transmission layer, an electron injection layer and a hole blocking layer can be further arranged between the cathode and the quantum dot light emitting layer.
For a positive type device, the bottom electrode disposed on the substrate is an anode, and in one embodiment of the present invention, the substrate may include a substrate and a bottom electrode stacked on the surface of the substrate; in still another embodiment of the present invention, the substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, and a hole injection layer stacked on a surface of the bottom electrode.
For the inversion device, the bottom electrode arranged on the substrate is a cathode, and in one embodiment of the invention, the substrate may include a substrate, a bottom electrode arranged on the surface of the substrate in a stacked manner, and a quantum dot light-emitting layer arranged on the surface of the bottom electrode in a stacked manner; in still another embodiment of the present invention, the substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, an electron transport layer stacked on a surface of the bottom electrode, and a quantum dot light emitting layer stacked on a surface of the electron transport layer; in still another embodiment of the present invention, the substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, an electron injection layer stacked on a surface of the bottom electrode, an electron transport layer stacked on a surface of the electron injection layer, and a quantum dot light emitting layer stacked on a surface of the electron transport layer; in still another embodiment of the present invention, the substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, an electron injection layer stacked on a surface of the bottom electrode, an electron transport layer stacked on a surface of the electron injection layer, a hole blocking layer stacked on a surface of the electron transport layer, and a quantum dot light emitting layer stacked on a surface of the hole blocking layer; in still another embodiment of the present invention, the substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, an electron injection layer stacked on a surface of the bottom electrode, an electron transport layer stacked on a surface of the electron injection layer, a hole blocking layer stacked on a surface of the electron transport layer, a quantum dot light emitting layer stacked on a surface of the hole blocking layer, and an electron blocking layer stacked on a surface of the quantum dot light emitting layer.
In a preferred embodiment, the mixed solution is prepared by the following method:
1) putting the zinc sulfide nano-particles without doping on the surface layer into NH3Heating in the atmosphere to obtain second p-type zinc sulfide nanoparticles with N elements doped on the surface layer;
2) mixing the second p-type zinc sulfide nano particles with N elements doped on the surface layer with the phospholene, and then calcining to obtain a mixed material containing the first p-type zinc sulfide nano particles and the phospholene;
3) and dispersing the mixed material in a solvent to obtain the mixed solution.
In the step 1), the acceptor level of the zinc sulfide nanoparticles is deep, so that the zinc sulfide nanoparticles are difficult to activate under common conditions to form an effective acceptor, and the intrinsic donor defects of the zinc sulfide have a strong compensation effect on the acceptor, so that the zinc sulfide nanoparticles need to be pretreated firstly. According to the embodiment, the zinc sulfide nanoparticles are pretreated by ammonia gas, N element in the ammonia gas can passivate a self-compensation donor generated by the zinc sulfide nanoparticles under the condition of high temperature, and meanwhile, the N element can enter a shallow surface layer molecular structure of the zinc sulfide nanoparticles to shallowly form an acceptor level, so that second p-type zinc sulfide nanoparticles doped with the N element on the surface layer are formed.
Preferably, the zinc sulfide nanoparticles without doping on the surface layer are placed in NH at the temperature of 250-350 DEG C3And heating in the atmosphere to obtain second p-type zinc sulfide nano-particles with N elements doped on the surface layer. The reason why the ammonia gas is heated to the above temperature range is that the ammonia gas is decomposed to form active N element at a temperature above 300 ℃, and if the temperature is lower than 300 ℃, the ammonia gas cannot release the active N element at normal pressure, and thus cannot enter the surface layer of the zinc sulfide nanoparticles and passivate the self-compensation defects thereof. In the step 2), the phosphorus alkene is prepared by adopting a liquid phase stripping method to prepare the black phosphorus nanoparticles. The method for preparing the phospholene from the black phosphorus nano-particles mainly comprises a mechanical stripping method, a liquid phase stripping method, a chemical synthesis method and the like. In this embodiment, the method for stripping the black phosphorus nanoparticles into the phospholene by a liquid phase stripping method preferably includes the following steps: and dispersing the black phosphorus nanoparticles in an organic solvent for ultrasonic treatment until uniform black brown appears in a transparent solution, and carrying out ultrasonic stripping to prepare the phospholene. The organic solvent is selected from anhydrous solvents, the boiling point is lower than 70 ℃, and the viscosity is lower. Besides the advantage of low cost, the phosphenes prepared by the liquid phase stripping method can be directly used for solution treatment in the subsequent steps, the operation is convenient, and the loss of the phosphenes can be reduced.
Preferably, the power of the ultrasound is 100-800W, more preferably 200W; the frequency of the ultrasonic wave is 28-80 kHz; the ultrasonic time is 20-60 minutes. Within the above range, the phosphenes can be obtained in an appropriate concentration and in an appropriate size and number of layers; if the ultrasonic time is too long, the power is too high, or the frequency is too high, the large black phosphorus nanoparticles are easy to peel off, but the phospholene is not peeled from the surface; if the ultrasonic time is too short, or the power is too low, or the frequency is too low, it is difficult to form a sufficient amount of phospholene, resulting in poor subsequent doping effect.
Preferably, the black phosphorus nanoparticle may have a single-layer structure or a multi-layer structure. Wherein the particle size of the black phosphorus nano-particles with the multilayer structure is 1-500 nm; the black phosphorus nanoparticles with the single-layer structure are sheet-shaped molecules with the single-atom-layer structure.
In the step 2), after the ultrasound is finished, removing large particles by using a filter, adding second p-type zinc sulfide nanoparticles doped with N element on the surface layer into the filtered clear solution, stirring for a certain time under nitrogen bubbling, drying, grinding, and calcining in a muffle furnace to obtain the mixed material containing the first p-type zinc sulfide nanoparticles and the phospholene. Wherein, the nitrogen gas can remove oxygen in the solution and unreacted NH adsorbed on the surface of the second p-type zinc sulfide nano-particle doped with N element on the surface layer3。
Preferably, the p-type zinc sulfide nanoparticles with N element doped on the surface layer are mixed with the phospholene and then calcined at the temperature of 500-700 ℃. In the mixed material containing the first P-type zinc sulfide nanoparticles and the phospholene, the surface layers of the first P-type zinc sulfide nanoparticles are doped with P elements, and the first P-type zinc sulfide nanoparticles are combined with the phospholene through the P elements. In the embodiment, after calcination, phosphorus can replace part of the N element entering the zinc sulfide lattice in the pretreatment, so that P-type doping formed by replacing sulfur with phosphorus is achieved, and a hole site is formed, so that the hole site concentration of zinc sulfide nanoparticles is increased, and the hole transmission effect is further improved. Meanwhile, the doped phosphorus element is connected with the thin layer and the single-layer phospholene in the mixed material by Van der Waals force to form ZnP-P acting force, and the multiple layers of overlapped phospholene are connected with each first P-type zinc sulfide nanoparticle by bridging action, so that the hole transmission efficiency among materials is improved, and the effect of improving the hole transmission performance of the materials is achieved.
In the step 3), the mixed material containing the first p-type zinc sulfide nanoparticles and the phospholene prepared in the step 2) is dispersed in a solvent (which may be a non-aqueous polar solvent or a non-polar solvent) to obtain the mixed solution.
In this embodiment, in order to obtain a high-quality hole transport layer, the anode needs to be subjected to a pretreatment process. Wherein the pretreatment process specifically comprises: and cleaning the anode with a cleaning agent to primarily remove stains on the surface of the anode, then sequentially and respectively ultrasonically cleaning the anode in deionized water, acetone, absolute ethyl alcohol and deionized water for 20min to remove impurities on the surface, and finally drying the anode by using high-purity nitrogen to obtain the anode.
In a preferred embodiment, the obtained quantum dot light emitting diode is subjected to an encapsulation process. The packaging process can adopt common machine packaging or manual packaging. Preferably, the oxygen content and the water content in the packaging treatment environment are both lower than 0.1 ppm so as to ensure the stability of the device.
In this embodiment, the preparation method of each layer may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method; the physical methods include, but are not limited to, one or more of solution methods (e.g., spin coating, printing, knife coating, dip-draw, dipping, spray coating, roll coating, casting, slot coating, or bar coating), evaporation (e.g., thermal evaporation, electron beam evaporation, magnetron sputtering, or multi-arc ion plating), deposition (e.g., physical vapor deposition, elemental layer deposition, pulsed laser deposition, etc.).
The method for preparing the mixed material comprising the first p-type zinc sulfide nanoparticles and the phospholene is described in detail below by way of examples.
The first embodiment is as follows: the following description will be made in detail by taking the preparation of the mixed material containing the first p-type zinc sulfide nanoparticle and the phospholene by using the zinc sulfide nanorod and the black phosphorus nanoparticle as an example:
1) putting zinc sulfide nano-rods into NH3Heating to 300 ℃ in the atmosphere, and preserving heat for 1 hour;
2) dispersing black phosphorus nanoparticles in N, N-Dimethylformamide (DMF) (10 mg/mL), ultrasonically stripping off thin layer and single-layer phospholene, ultrasonically treating for 30 min, removing large particles with 10 μm filter, and adding NH into the clear solution3Stirring the treated zinc sulfide nano-rods for 20 minutes under the bubbling of nitrogen to obtain a black phosphorus zinc sulfide mixed solution;
3) and drying the black phosphorus zinc sulfide mixed solution, grinding, and calcining in a muffle furnace at 600 ℃ for 2 hours to obtain a mixed material containing the first p-type zinc sulfide nanoparticles and the phospholene.
Example two: the following description will be made in detail by taking the preparation of the mixed material containing the first p-type zinc sulfide nanoparticles and the phospholene by using the zinc sulfide nanospheres and the black phosphorus nanoparticles as an example:
1) putting zinc sulfide nano-microspheres into NH3Heating to 300 ℃ in the atmosphere, and preserving heat for 1 hour;
2) dispersing black phosphorus nanoparticles in dimethyl sulfoxide (DMSO) (10 mg/mL), ultrasonically stripping out thin layer and monolayer phospholene, ultrasonically removing large particles with a 10 μm filter after 30 min, and adding NH into the clear solution3Stirring the treated zinc sulfide nano microspheres for 20 minutes under nitrogen bubbling to obtain a black phosphorus zinc sulfide mixed solution;
3) and drying the black phosphorus zinc sulfide mixed solution, grinding, and calcining in a muffle furnace at 600 ℃ for 2 hours to obtain a mixed material containing the first p-type zinc sulfide nanoparticles and the phospholene.
Example three: the following description will be given in detail by taking the preparation of a mixed material containing a first p-type zinc sulfide nanoparticle and a phospholene by using zinc sulfide nanosheets and black phosphorus nanoparticles as an example:
1) putting zinc sulfide nanosheet into NH3Heating to 300 ℃ in the atmosphere, and preserving heat for 1 hour;
2) dispersing black phosphorus nanoparticles in methyl formamide (NMF) (10 mg/mL), ultrasonically stripping out a thin layer and a single-layer phospholene, ultrasonically removing large particles by a 10-micron filter after 30 minutes, and adding NH into clear liquid3Stirring the treated zinc sulfide nanosheets for 20 minutes under nitrogen bubbling to obtain a black phosphorus zinc sulfide mixed solution;
3) and drying the black phosphorus zinc sulfide mixed solution, grinding, and calcining in a muffle furnace at 600 ℃ for 2 hours to obtain a mixed material containing the first p-type zinc sulfide nanoparticles and the phospholene.
In summary, the invention provides a quantum dot light emitting diode and a preparation method thereof. According to the invention, the hole transport layer material comprises first P-type zinc sulfide nanoparticles and phospholene, the surface layer of the first P-type zinc sulfide nanoparticles is doped with P elements, and the P elements substitute for S elements to form P-type doping, so that the effect of improving hole sites can be achieved, the hole concentration is improved, and the hole transport performance is improved.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A quantum dot light emitting diode comprising: the hole transport layer is characterized in that the hole transport layer comprises a first P-type zinc sulfide nanoparticle and phospholene, wherein the surface layer of the first P-type zinc sulfide nanoparticle is doped with P element, and the phospholene is combined on the surface of the first P-type zinc sulfide nanoparticle.
2. The quantum dot light-emitting diode of claim 1, wherein the hole transport layer material comprises a first p-type zinc sulfide nanoparticle and a phospholene dispersed between a plurality of first p-type zinc sulfide nanoparticles, the plurality of first p-type zinc sulfide nanoparticles coupled by the phospholene.
3. The quantum dot light-emitting diode of claim 1, wherein the zinc sulfide nanoparticles are selected from one or more of zinc sulfide nanorods, zinc sulfide nanospheres, and zinc sulfide nanosheets.
4. The qd-led of claim 3, wherein the zinc sulfide nanospheres have a particle size of 5-20 nm; and/or
The size of the zinc sulfide nano rod is 5-20 nm;
the size of the zinc sulfide nanosheet is 5-20 nm;
the size of the phospholene is a monomolecular layer or a polymolecular layer structure below 2-50 nm.
5. The quantum dot light-emitting diode of claim 1, wherein the size of the phospholene is a monolayer or a monolayer structure below 10-40 nm.
6. The quantum dot light-emitting diode of claim 1, wherein the hole transport layer has a thickness of 30-100 nm.
7. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
providing a substrate;
providing a mixed solution containing first P-type zinc sulfide nanoparticles and phospholene, wherein the surface layers of the first P-type zinc sulfide nanoparticles are doped with P elements;
and depositing the mixed solution on a substrate to form a film, thereby forming a hole transport layer.
8. The method for preparing a quantum dot light-emitting diode according to claim 7, wherein the mixed solution is prepared by the following method:
putting zinc sulfide nano particles without doping on the surface into NH3Heating in the atmosphere to obtain second p-type zinc sulfide nanoparticles with N elements doped on the surface layer;
mixing the second p-type zinc sulfide nano particles with N elements doped on the surface layer with the phosphorus alkene and then calcining to obtain a mixed material containing the first p-type zinc sulfide nano particles and the phosphorus alkene;
and dispersing the mixed material into a solvent to obtain the mixed solution.
9. The method for preparing a quantum dot light-emitting diode according to claim 8, wherein the temperature is 250-350 ℃Putting zinc sulfide nano particles without doping on the surface into NH3Heating in the atmosphere to obtain second p-type zinc sulfide nanoparticles with N elements doped on the surface layer; and/or
Mixing the second p-type zinc sulfide nano-particles with N elements doped on the surface layer with the phospholene, and calcining at the temperature of 500-700 ℃.
10. The method for preparing a quantum dot light-emitting diode according to claim 7, wherein the mixed solution is deposited on a substrate and annealed at 50-250 ℃ to form the hole transport layer.
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| CN106129256A (en) * | 2016-08-30 | 2016-11-16 | 戚明海 | A kind of perovskite solaode with black phosphorus as hole transmission layer and preparation method |
| CN106784191A (en) * | 2016-12-27 | 2017-05-31 | Tcl集团股份有限公司 | QLED devices and preparation method thereof |
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| CN106129256A (en) * | 2016-08-30 | 2016-11-16 | 戚明海 | A kind of perovskite solaode with black phosphorus as hole transmission layer and preparation method |
| CN106784191A (en) * | 2016-12-27 | 2017-05-31 | Tcl集团股份有限公司 | QLED devices and preparation method thereof |
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