CN111223998A - Quantum dot light-emitting diode and preparation method thereof - Google Patents
Quantum dot light-emitting diode and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electron transmission layer is arranged between the quantum dot light-emitting layer and the cathode, and a first layer containing dopamine is arranged between the quantum dot light-emitting layer and the electron transmission layer. The quantum dot light-emitting diode comprises a first layer which is uniform, compact, strong in adhesiveness, stable and uniform, few in interface defects and excellent in carrier transmission performance, and a finally obtained device has good light-emitting efficiency and service life.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof.
Background
A Quantum dot light-emitting diode (QLED) is a new display device, and its structure is similar to an Organic light-emitting diode (OLED), and is mainly assembled by a light-emitting layer, electrodes, and various functional layers into a sandwich structure. Compared with the traditional light-emitting diode and OLED, the QLED has the main characteristics that the light-emitting material adopts inorganic semiconductor quantum dots which are more excellent in performance and more stable in material, and has the characteristics of unique quantum size effect, macroscopic quantum tunneling effect, surface effect and the like, so that the QLED shows excellent physical properties, especially excellent optical properties, such as narrow emission spectrum, high light color purity, high light-emitting efficiency, adjustable light-emitting color, good light-emitting stability and the like. In addition, the QLED device assembled by the quantum dots has the advantages of long service life, high color purity, good stability, long service life, good color temperature, simple preparation process and the like, is expected to become a next-generation flat panel display, and has wide development prospect.
Due to the difference between the QLED and the OLED, quantum dot nanoparticles are used as a light emitting material in the QLED device structure, and nanoparticles such as metal oxide or metal sulfide with excellent carrier transport performance are generally used as an electron transport layer or a hole transport layer, while each layer in the whole device structure in the OLED is generally made of an organic material. These nanoparticles having a specific function are not only excellent in performance but also capable of forming a film using a solution method. Nevertheless, the application of these nanoparticle materials in the device fabrication process still has some problems, for example, nanoparticles are easy to agglomerate in solution, and the conditions of non-uniform film formation, incomplete film layer coverage, pinholes and the like are easily caused in the film formation process, and the gaps between nanoparticles are large, the film layer is loose, the film quality is poor, the device leakage current is serious, and the device luminescence performance and the device lifetime are affected. In addition, when different nanoparticle films are stacked, due to the fact that crystal structures, surface ligands, surface energy, polarities, solubility, solvent types and the like of two nanoparticle materials of adjacent film layers have large differences, adverse effects such as lattice mismatching between the film layers, large differences of material structures and properties, mutual influence of deposition processes and the like are very easy to occur, and finally serious problems such as loose connection between the film layers, existence of a large number of interface defects, large carrier injection and transmission barriers, serious non-radiative recombination, low luminous performance of a device, quick service life attenuation of the device and the like are caused.
Therefore, the prior art is still in need of further research and development.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a quantum dot light-emitting diode and a preparation method thereof, and aims to solve the technical problems that the luminescent performance and the service life of a device are influenced due to poor film combination degree and lattice mismatching between a quantum dot light-emitting layer and an electron transmission layer in the prior device.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a quantum dot light-emitting diode which comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electron transmission layer is arranged between the quantum dot light-emitting layer and the cathode, and a first layer containing dopamine is arranged between the quantum dot light-emitting layer and the electron transmission layer.
According to the quantum dot light-emitting diode provided by the invention, the first layer containing dopamine is arranged between the quantum dot light-emitting layer and the electron transmission layer, and the dopamine has very excellent adhesiveness and self-polymerization performance, and the molecular structure of the dopamine contains catechol and amino functional groups, so that a strong adhesion effect can be generated between the two functional layers through abundant hydrogen bonds and other modes, and the quantum dot light-emitting layer and the electron transmission layer can be tightly bonded; meanwhile, the self-polymerization performance of the dopamine can greatly improve the film forming quality of the first layer, and in addition, the dopamine also has excellent carrier transmission performance, so that the first layer which is uniform, compact, strong in adhesion, stable and uniform, less in interface defect and excellent in carrier transmission performance can effectively avoid the defects of loose structure, easy peeling, serious in interface defect, difficult in carrier transmission and large in leakage current between the quantum dot light emitting layer and the electron transmission layer due to reasons of lattice mismatch, poor film combination degree, large film stress and the like, so that the stability of the device is improved, and the device has good light emitting performance and long service life.
The invention also provides a preparation method of the quantum dot light-emitting diode, which comprises the following steps:
providing a substrate, and preparing a solution containing dopamine;
depositing the solution on the substrate, and then annealing to obtain a first layer.
The preparation method of the quantum dot light-emitting diode provided by the invention has the advantages that the process is simple, the cost is low, the dopamine-containing solution is deposited on the substrate and then heated, so that the first layer which is uniform, compact, strong in adhesiveness, stable and uniform, few in interface defects and excellent in carrier transmission performance can be obtained, and finally the obtained device has good luminous efficiency and service life.
Drawings
Fig. 1 is a structural diagram of a quantum dot light emitting diode according to an embodiment 1 of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
On one hand, the embodiment of the invention also provides a quantum dot light-emitting diode, which comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electron transmission layer is arranged between the quantum dot light-emitting layer and the cathode, and a first layer containing dopamine is arranged between the quantum dot light-emitting layer and the electron transmission layer.
According to the quantum dot light-emitting diode provided by the embodiment of the invention, the first layer containing dopamine is arranged between the quantum dot light-emitting layer and the electron transmission layer, and the dopamine has very excellent adhesiveness and self-polymerization performance, and the molecular structure of the dopamine contains catechol and amino functional groups, so that a strong adhesion effect can be generated between the two functional layers through abundant hydrogen bonds and other modes, and the quantum dot light-emitting layer and the electron transmission layer can be tightly bonded; meanwhile, the self-polymerization performance of the dopamine can greatly improve the film forming quality of the first layer, and in addition, the dopamine also has excellent current carrier transmission performance, so that the first layer which is uniform, compact, strong in adhesion, stable and uniform, few in interface defects and excellent in current carrier transmission performance is used as an interface modification effect, and the defects that the structure between two film layers is loose, easy to peel off, serious in interface defects, difficult in current carrier transmission and large in leakage current caused by lattice mismatch, poor film layer combination degree, large film layer stress and the like between a quantum dot light emitting layer and an electron transmission layer can be effectively avoided, so that the stability of a device is improved, and the device has good light emitting performance and long service life.
Dopamine is a well-known neurotransmission substance, a chemical substance used to help cells deliver impulses. The brain endocrine is related to the emotion and feeling of human, and transmits exciting and happy information, which can affect the pleasure of everyone to things. In nature, the foot gland cells of Mussel (Mussel), a common marine organism, secrete an ultra-strong mucus which can be coagulated into byssus in seawater and can be tightly attached to the surface of a substrate material. It has been found that the main component of this mucus of mussels is Mussel Adhesive Proteins (Mussel Adhesive Proteins), which rapidly solidify in a humid environment and form strong interactions with the surface of the substrate material. The mussel adhesive Protein interface layer of the byssus and the adhesive matrix contains a large amount of Protein component MFP-5(Mytilus Foot Protein 5), and the amino acid sequence of the Mytilus Foot Protein interface layer contains nearly 30% of L-dopa and 15% of lysine residues, which are key components for endowing the mussel adhesive Protein with special adhesive performance. And as the catechol derivative of the L-dopa, dopamine combines a catechol group of the L-dopa and an amino functional group of lysine, has an adhesion component similar to MFP-5, can have a strong adhesion effect on the surface of a substrate, and due to the special properties of the dopamine and the catechol and amino functional groups, covalent and non-covalent interaction is established on the organic-inorganic surface, so that the dopamine has strong adhesion performance, and can play roles of passivating surface defects and tightly connecting an upper layer of film and a lower layer of film between interfaces. The dopamine also has self-polymerization capacity, is easy to oxidize, then initiates self-polymerization-crosslinking reaction, can form close adhesion on the surface of almost any solid material, and has mild modification process conditions, simple steps and excellent modification effect. In addition, the structure of the dopamine can be converted into a structure mainly containing nitrogen and benzene rings under a certain condition, the dopamine has a large number of conjugated structures, the transmission efficiency of carriers can be effectively improved, and the dopamine has certain n-type semiconductor characteristics due to the existence of nitrogen atoms, namely, the dopamine has better electron transmission performance. Therefore, based on excellent adhesion performance, self-polymerization performance, interface defect passivation performance and excellent carrier transmission performance of dopamine, when dopamine forms a first layer at an interface between a quantum dot light emitting layer and an electron transmission layer, the dopamine is in close connection with the adhesion effect between the quantum dot light emitting layer and the electron transmission layer in the modes of abundant hydrogen bonds and the like, two layers of films are in interaction and tight connection, and the dopamine can form polydopamine under the self-polymerization condition, so that the density and film forming uniformity of the whole first layer can be further improved, interface defects and dangling bonds are passivated, and numerous adverse conditions such as poor film binding degree and lattice mismatch between the quantum dot light emitting layer and the electron transmission layer are prevented.
Further, in the quantum dot light-emitting diode of the embodiment of the invention, the thickness of the first layer is 5-20 nm. The first layer is mainly used for modifying the interface between the quantum dot light-emitting layer and the electron transmission layer, so that the thickness of the first layer is smaller. Further, in the quantum dot light emitting diode according to the embodiment of the present invention, a hole function layer is disposed between the quantum dot light emitting layer and the anode. Specifically, the hole function layer comprises a hole injection layer and a hole transport layer. Still further, the material of the electron transport layer is selected from at least one of metal oxide nanoparticles, metal chalcogenide nanoparticles, metal nitride nanoparticles, inorganic non-metal oxide nanoparticles, inorganic non-metal chalcogenide nanoparticles, and inorganic non-metal nitride nanoparticles.
Still further, the first layer further comprises a regulator for improving the self-polymerization effect of the dopamine, and the mass of the regulator is 0.2-30% of the mass of the dopamine. Specifically, the regulator is selected from at least one of tris (hydroxymethyl) aminomethane, potassium hydrogen phthalate, sodium hydrogen phthalate, potassium phosphate, sodium phosphate, potassium cacodylate, sodium cacodylate, potassium 3-morpholine propanesulfonate and sodium 3-morpholine propanesulfonate; the regulator can improve the self-polymerization effect and the carrier transport property of dopamine. More preferably, the mass of the modifier is 0.2-5% of the mass of the dopamine, and when the modifier is more, the self-polymerization of dopamine is sufficient, but since the electron transport properties of the modifier are not good, too much introduction may affect the device performance.
Still further, the first layer is comprised of the dopamine autoregulating agent, i.e. in embodiments of the invention, the first layer may be comprised of dopamine and a modulatory agent.
Correspondingly, the preparation method of the quantum dot light-emitting diode comprises the following steps:
s01; providing a substrate, and preparing a solution containing dopamine;
s02; depositing the solution on the substrate, and then annealing to obtain a first layer.
According to the quantum dot light-emitting diode provided by the embodiment of the invention, the solution containing dopamine is deposited on the substrate and then heated, so that a first layer which is uniform, compact, strong in adhesiveness, stable and uniform, less in interface defect and excellent in carrier transmission performance can be obtained, and finally the obtained device has good luminous efficiency and service life.
Further, in the step S01, the substrate is a substrate for preparing a quantum dot light emitting diode, and if a quantum dot light emitting layer is disposed on the substrate, the first layer is directly prepared on the quantum dot layer; if an electron transport layer is disposed on the substrate, the first layer is prepared directly on the electron transport layer. Furthermore, the concentration of the dopamine in the solution is 0.2-120 mg/mL. Since the thickness of the dopamine layer (i.e. the first layer) is 5-20 nm, the concentration of dopamine in the solution can affect the thickness and uniformity of the film layer, so that the concentration cannot be too high, and the preferred concentration of dopamine is 0.2-25 mg/mL.
Further, in the step S02, the temperature of the annealing treatment is 25 to 300 ℃. Further, preparing a solution comprising a modulator and said dopamine, depositing said solution on said substrate; wherein the modulator is used to increase the dopamine auto-polymerization effect. The regulator is at least one selected from the group consisting of tris (hydroxymethyl) aminomethane, potassium hydrogen phthalate, sodium hydrogen phthalate, potassium phosphate, sodium phosphate, potassium cacodylate, sodium cacodylate, potassium 3-morpholine propanesulfonate and sodium 3-morpholine propanesulfonate. The concentration of the regulator is 0.008-0.7 mol/L.
In a specific embodiment, as shown in fig. 1, a method for preparing a positive type structure quantum dot light emitting diode includes the following steps:
step S1: preparing an anode on a substrate;
step S2: preparing a hole injection layer and/or a hole transport layer on the anode;
step S3: preparing a quantum dot light emitting layer on the hole injection layer and/or the hole transport layer;
step S4: preparing a dopamine-modified first layer on the quantum dot light-emitting layer;
step S4: preparing a nanoparticle electron transport layer on the dopamine interface modification layer;
step S5: a cathode is prepared on the electron transport layer.
In one embodiment, the preparation of the quantum dot light-emitting diode with the inversion structure comprises the following steps:
step S1: preparing a cathode on a substrate;
step S2: preparing a nanoparticle electron transport layer on the cathode;
step S3: preparing a dopamine interface modification layer on the nanoparticle electron transport layer;
step S4: preparing a quantum dot light-emitting layer on the dopamine interface modification layer;
step S4: preparing a hole transport layer and/or a hole injection layer on the quantum dot light-emitting layer;
step S5: an anode is prepared on the hole transport layer and/or the hole injection layer.
In the film forming method, dopamine is prepared into a dopamine solution with the concentration of 0.2-120 mg/mL, and then a solution method is adopted for deposition film forming; wherein the solvent comprises an organic solvent and/or an inorganic solvent.
The organic solvent includes, but is not limited to, one or more of saturated hydrocarbon, unsaturated hydrocarbon, aromatic hydrocarbon, alcohol solvent, ether solvent, ketone solvent, nitrile solvent, ester solvent, and their derivatives. Wherein the organic solvent includes, but is not limited to, hexane, cyclohexane, heptane, n-octane, isooctane, pentane, methylpentane, ethylpentane, cyclopentane, methylcyclopentane, ethylcyclopentane, benzene, toluene, xylene, ethylbenzene, dichloromethane, trichloromethane, carbon tetrachloride, dichloroethane, trichloroethane, chloropropane, dichloropropane, trichloropropane, chlorobutane, dibromomethane, tribromomethane, bromoethane, bromopropane, iodomethane, chlorobenzene, bromobenzene, benzyl chloride, benzyl bromide, trifluorotoluene, methanol, ethanol, propanol, isopropanol, butanol, isobutanol, sec-butanol, tert-butanol, pentanol, isopentanol, tert-pentanol, cyclohexanol, octanol, benzyl alcohol, ethylene glycol, phenol, o-cresol, diethyl ether, anisole, phenetole, diphenyl ether, tetrahydrofuran, ethylene glycol dimethyl ether, propylene glycol methyl ether, ethylene glycol diethyl ether, At least one of hydroxyethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, acetaldehyde, benzaldehyde, acetone, butanone, cyclohexanone, acetophenone, formic acid, acetic acid, ethyl acetate, diethyl oxalate, diethyl malonate, propyl acetate, methyl propyl ester, butyl acetate, methyl amyl acetate, nitrobenzene, acetonitrile, diethylamine, triethylamine, aniline, pyridine, picoline, ethylenediamine, N-dimethylformamide, N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, hexamethylphosphoramide, carbon disulfide, methyl sulfide, ethyl sulfide, dimethyl sulfoxide, mercaptan, ethanethiol, and methoxytetrahydrofuran. The inorganic solvent includes, but is not limited to, one or more of water, liquid carbon dioxide, liquid ammonia, liquid sulfur dioxide, hydrogen cyanide, sulfuric acid, nitric acid, hydrogen fluoride, polyphosphoric acid, and super acid. The solution is preferably deposited by a solution method, wherein the solution method includes, but is not limited to, one or more of spin coating, printing, blade coating, dip-coating, dipping, spraying, roll coating, casting, slit coating, and stripe coating.
In the quantum dot light-emitting diode and the preparation method, the quantum dot nano-particle materialIs one or more of II-VI compound, III-V compound, II-V compound, III-VI compound, IV-VI compound, I-III-VI compound, II-IV-VI compound or IV simple substance. Specifically, the semiconductor materials used for the quantum dot light emitting layer include, but are not limited to, nanocrystals of II-VI semiconductors such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary, ternary, quaternary II-VI compounds; nanocrystals of group III-V semiconductors such as GaP, GaAs, InP, InAs and other binary, ternary, quaternary III-V compounds; the semiconductor material for electroluminescence is not limited to group II-V compounds, group III-VI compounds, group IV-VI compounds, group I-III-VI compounds, group II-IV-VI compounds, group IV simple substance, and the like. The quantum dot luminescent layer material can also be a doped or undoped inorganic perovskite type semiconductor and/or an organic-inorganic hybrid perovskite type semiconductor; specifically, the structural general formula of the inorganic perovskite type semiconductor is AMX3Wherein A is Cs+Ion, M is a divalent metal cation, including but not limited to Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+、Eu2+X is a halide anion, including but not limited to Cl-、Br-、I-(ii) a The structural general formula of the organic-inorganic hybrid perovskite type semiconductor is BMX3Wherein B is an organic amine cation including but not limited to CH3(CH2)n-2NH3 +(n.gtoreq.2) or NH3(CH2)nNH3 2+(n.gtoreq.2). When n is 2, the inorganic metal halide octahedron MX6 4-The metal cations M are positioned in the center of a halogen octahedron through connection in a roof sharing mode, and the organic amine cations B are filled in gaps among the octahedrons to form an infinitely extending three-dimensional structure; inorganic metal halide octahedra MX linked in a coterminous manner when n > 26 4-Extending in two-dimensional direction to form a layered structure, and inserting organic amine cation bi-molecule between layersA sublayer (protonated monoamine) or an organic amine cation monomolecular layer (protonated diamine), wherein the organic layer and the inorganic layer are mutually overlapped to form a stable two-dimensional layered structure; m is a divalent metal cation including, but not limited to, Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+、Eu2 +(ii) a X is a halide anion, including but not limited to Cl-、Br-、I。
Wherein, the electron transport layer material includes but is not limited to inorganic nano-particle material with electron transport capability, wherein, the inorganic nano-particle electron transport layer material is selected from one or more of doped or undoped metal oxide and doped or undoped metal sulfide. Wherein the doped or undoped metal oxide comprises ZnO and TiO2、SnO2、Ta2O3、ZrO2One or more of NiO, TiLiO, ZnAlO, ZnMgO, ZnSnO, ZnLiO and InSnO. The doped or undoped metal sulfide comprises one or more of CdS, ZnS, MoS, WS and CuS.
Wherein, the hole injection material comprises but not limited to one or more of PEDOT PSS, CuPc, F4-TCNQ, HATCN, transition metal oxide and transition metal chalcogenide compound. Wherein the transition metal oxide comprises one or more of NiOx, MoOx, WOx, CrOx and CuO. The metal sulfur compound comprises one or more of MoSx, MoSex, WSx, WSex and CuS. Wherein the hole injection layer material and/or the hole transport layer material comprises but is not limited to one or more of PEDOT PSS, CuPc, F4-TCNQ, HATCN, transition metal oxide and transition metal chalcogenide compound. Wherein the transition metal oxide comprises one or more of NiOx, MoOx, WOx, CrOx and CuO. The metal sulfur compound comprises one or more of MoSx, MoSex, WSx, WSex and CuS.
Wherein the hole transport layer material includes, but is not limited to, poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), polyvinylcarbazole, poly (N, N ' -bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-phenylenediamine), 4' -tris (carbazol-9-yl) triphenylamine, 4' -bis (9-carbazol) biphenyl, N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1 ' -biphenyl-4, 4' -diamine, 15N, N ' -diphenyl-N, at least one of N ' - (1-naphthyl) -1,1 ' -biphenyl-4, 4' -diamine, graphene and C60. As another embodiment, the hole transport layer is selected from inorganic materials having hole transport capability, including but not limited to at least one of NiOx, MoOx, WOx, CrOx, CuO, MoSx, MoSex, WSx, WSex, CuS.
Wherein, the anode comprises one or more of but not limited to metal materials, carbon materials, metal oxides and hole injection materials. Wherein the metal material comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg. The carbon material comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers. The metal oxide can be doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also including a composite electrode sandwiching metal between doped or undoped transparent metal oxides, wherein the composite electrode includes AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO/Al/ZnO2/Ag/TiO2、TiO2/Al/TiO2、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO2、TiO2/Al/TiO2One or more of (a).
Wherein, the cathode layer material includes but is not limited to one or more of metal material, carbon material and metal oxide. Wherein the metal material comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg. The carbon material comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers. The metal oxide can be doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also including a composite electrode sandwiching metal between doped or undoped transparent metal oxides, wherein the composite electrode includes AZO/Ag/AZO, AZO/Al/AZO、ITO/Ag/ITO、ITO/Al/ITO、ZnO/Ag/ZnO、ZnO/Al/ZnO、TiO2/Ag/TiO2、TiO2/Al/TiO2、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO2、TiO2/Al/TiO2One or more of (a).
Wherein the substrate is a rigid substrate or a flexible substrate, wherein the rigid substrate includes but is not limited to one or more of glass and metal foil; the flexible substrate includes, but is not limited to, one or more of polyethylene terephthalate (PET), polyethylene terephthalate (PEN), Polyetheretherketone (PEEK), Polystyrene (PS), Polyethersulfone (PES), Polycarbonate (PC), Polyarylate (PAT), Polyarylate (PAR), Polyimide (PI), polyvinyl chloride (PV), Polyethylene (PE), polyvinylpyrrolidone (PVP), and textile fibers.
In addition to the above specific description, the preparation method of each layer in the quantum dot light emitting diode may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method; physical methods include, but are not limited to, physical coating methods or solution methods, wherein solution methods include, but are not limited to, spin coating, printing, knife coating, dip-coating, dipping, spraying, roll coating, casting, slot coating, bar coating; physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition. The quantum dot light emitting diode may be packaged partially, fully or not, and the embodiment of the present invention is not limited strictly.
Finally, the embodiment of the invention also provides a printed quantum dot display screen which comprises the quantum dot light-emitting diode.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
A quantum dot light emitting diode is structurally shown in figure 1, and the preparation process of the device is as follows:
firstly, dissolving dopamine in absolute ethyl alcohol, adjusting the concentration to be 15mg/mL, and then adding 0.02 mol/L3-morpholine sodium propanesulfonate into the solution to prepare dopamine solution. Then preparing the quantum dot light-emitting diode according to the following steps:
step S1: a PEDOT/PSS hole injection layer was spin-coated on ITO conductive glass at 4500rpm, followed by heating at 160 deg.C for 10 min.
Step S2: a TFB hole transport layer was spin coated on the PEDOT: PSS hole injection layer at 10mg/mL, 2500 rpm.
Step S3: a layer of CdSe @ ZnS quantum dot light-emitting layer was spin-coated on the TFB hole-transporting layer at 18mg/mL, 3000 rpm.
Step S4: and (2) coating the dopamine solution on the CdSe @ ZnS quantum dot light-emitting layer in a rotating speed of 3000rpm/s in a rotating mode, and then annealing at 80 ℃ for 30min to obtain a dopamine interface modification layer, namely a first layer containing dopamine.
Step S5: and spin-coating a ZnO nanoparticle electron transport layer on the first layer containing dopamine at a rotating speed of 25mg/mL and 2500 rpm.
Step S6: and evaporating and plating a layer of Al on the ZnO nano-particle electron transmission layer to be used as a cathode to obtain the quantum dot light-emitting diode.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electron transmission layer is arranged between the quantum dot light-emitting layer and the cathode, and the quantum dot light-emitting diode is characterized in that a first layer containing dopamine is arranged between the quantum dot light-emitting layer and the electron transmission layer.
2. The quantum dot light-emitting diode of claim 1, wherein the first layer has a thickness of 5 to 20 nm.
3. The quantum dot light-emitting diode of claim 1, wherein the material of the electron transport layer is selected from at least one of metal oxide nanoparticles, metal chalcogenide nanoparticles, metal nitride nanoparticles, inorganic non-metal oxide nanoparticles, inorganic non-metal chalcogenide nanoparticles, and inorganic non-metal nitride nanoparticles.
4. The qd-led of any one of claims 1 to 3, wherein a hole functional layer is stacked between the qd-light emitting layer and the anode.
5. The qd-led of any one of claims 1 to 3, wherein the first layer further comprises a regulator for increasing the auto-polymerization effect of dopamine, the mass of the regulator being 0.2-30% of the mass of dopamine.
6. The quantum dot light-emitting diode of claim 5, wherein the modifier is selected from at least one of tris (hydroxymethyl) aminomethane, potassium hydrogen phthalate, sodium hydrogen phthalate, potassium phosphate, sodium phosphate, potassium cacodylate, sodium cacodylate, potassium 3-morpholinopropanesulfonate, and sodium 3-morpholinopropanesulfonate; and/or the presence of a gas in the gas,
the mass of the regulator is 0.2-5% of the mass of the dopamine; and/or the presence of a gas in the gas,
the first layer consists of the dopamine self-neutralization modulator.
7. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
providing a substrate, and preparing a solution containing dopamine;
depositing the solution on the substrate, and then annealing to obtain a first layer.
8. The method according to claim 7, wherein the concentration of dopamine in the solution is 0.2-120 mg/mL; and/or the presence of a gas in the gas,
the temperature of the annealing treatment is 25-300 ℃.
9. The method of claim 7, wherein a solution comprising a modulator and said dopamine is formulated and deposited on said substrate; wherein the modulator is used to increase the dopamine auto-polymerization effect.
10. The method according to claim 9, wherein the regulator is at least one selected from the group consisting of tris (hydroxymethyl) aminomethane, potassium hydrogen phthalate, sodium hydrogen phthalate, potassium phosphate, sodium phosphate, potassium cacodylate, sodium cacodylate, potassium 3-morpholinopropanesulfonate, and sodium 3-morpholinopropanesulfonate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071998A (en) * | 2020-09-18 | 2020-12-11 | 京东方科技集团股份有限公司 | Light-emitting device and display device |
| US11532800B2 (en) * | 2019-09-23 | 2022-12-20 | Samsung Electronics Co., Ltd. | Light emitting device, method of manufacturing the same, and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610725A (en) * | 2012-03-29 | 2012-07-25 | 华北电力大学 | Semiconductor quantum dot light-emitting diode and preparing method thereof |
| CN106601925A (en) * | 2016-12-22 | 2017-04-26 | Tcl集团股份有限公司 | Quantum dot luminescent layer and preparation method thereof, and quantum dot light-emitting diode (QLED) and preparation method thereof |
| CN107747214A (en) * | 2017-09-19 | 2018-03-02 | 东华大学 | A kind of preparation method of the pattern metal textile based on dopamine pre-treatment |
-
2018
- 2018-11-26 CN CN201811418344.9A patent/CN111223998A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610725A (en) * | 2012-03-29 | 2012-07-25 | 华北电力大学 | Semiconductor quantum dot light-emitting diode and preparing method thereof |
| CN106601925A (en) * | 2016-12-22 | 2017-04-26 | Tcl集团股份有限公司 | Quantum dot luminescent layer and preparation method thereof, and quantum dot light-emitting diode (QLED) and preparation method thereof |
| CN107747214A (en) * | 2017-09-19 | 2018-03-02 | 东华大学 | A kind of preparation method of the pattern metal textile based on dopamine pre-treatment |
Non-Patent Citations (1)
| Title |
|---|
| MEIHUI HOU.ET: "Enhancing Efficiency and Stability of Perovskite Solar Cells via a Self-Assembled Dopamine Interfacial Layer", 《ACS APPL. MATER. INTERFACES》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11532800B2 (en) * | 2019-09-23 | 2022-12-20 | Samsung Electronics Co., Ltd. | Light emitting device, method of manufacturing the same, and display device |
| US11910629B2 (en) | 2019-09-23 | 2024-02-20 | Samsung Electronics Co., Ltd. | Light emitting device, method of manufacturing the same, and display device |
| CN112071998A (en) * | 2020-09-18 | 2020-12-11 | 京东方科技集团股份有限公司 | Light-emitting device and display device |
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