CN111223947A - Gallium arsenide battery epitaxial structure and preparation method thereof - Google Patents

Gallium arsenide battery epitaxial structure and preparation method thereof Download PDF

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Publication number
CN111223947A
CN111223947A CN201811425935.9A CN201811425935A CN111223947A CN 111223947 A CN111223947 A CN 111223947A CN 201811425935 A CN201811425935 A CN 201811425935A CN 111223947 A CN111223947 A CN 111223947A
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layer
arsenide
quantum dot
epitaxial structure
substrate
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罗轶
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Zishi Energy Co.,Ltd.
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Dongtai Hi Tech Equipment Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a gallium arsenide battery epitaxial structure and a preparation method thereof. The gallium arsenide battery epitaxial structure comprises a substrate, and a sacrificial layer and a battery layer which are arranged on the substrate, wherein the sacrificial layer and the battery layer are sequentially stacked along the direction far away from the substrate, the sacrificial layer comprises a stacking unit, and the stacking unit comprises a film layer which can be corroded by wet etching liquid and a quantum dot layer which is clamped in the film layer and cannot be corroded by the wet etching liquid. This gallium arsenide battery epitaxial structure, through setting up the sacrificial layer of sandwich structure of intermediate interlayer for the arsenide quantum dot layer that can not be corroded by wet etching liquid, when wet etching peels off the substrate, arsenide quantum dot can peel off through stirring corrosive liquid is whole to leave the hole in original quantum dot position, the hole enables corrosive liquid and nearby not corroded aluminum arsenide layer contact area increase, improves the corrosion rate of sacrificial layer in wet etching process.

Description

Gallium arsenide battery epitaxial structure and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a gallium arsenide cell epitaxial structure and a preparation method thereof.
Background
Gallium arsenide (GaAs) is one of the most preferable materials for absorbing sunlight, and a solar cell made of gallium arsenide has the characteristics of high conversion efficiency, good temperature characteristics, strong radiation resistance and the like, and is more and more widely applied.
Most gallium arsenide thin films are fabricated on expensive single crystal substrates, which is costly. The substrate stripping technology provides necessary technical support for the development of the solar cell towards the thinning. The repeated utilization of the substrate also reduces the manufacturing cost of the thin-film solar cell, and reduces the pollution to the environment and the waste of resources in the manufacturing process.
At present, the battery layer stripping technology of the gallium arsenide battery is mainly to carry out wet etching on a sacrificial layer between a substrate and a battery layer so as to separate the substrate and the battery layer. In the wet etching process, acid solution chemical etching is often adopted, and since the sacrificial layer grows between the substrate and the battery layer, the etching is usually performed from the edge of the sacrificial layer to the inside, the etching difficulty is increased along with the etching, and generally, the wet etching needs a large amount of time consumption, so that how to effectively improve the stripping efficiency of the battery layer and the substrate becomes the problem to be solved urgently at present.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides a gallium arsenide battery epitaxial structure and a preparation method thereof. This gallium arsenide battery epitaxial structure is through setting up the sacrificial layer of sandwich structure of intermediate interlayer for the arsenide quantum dot layer that can not be corroded by wet etching liquid, when wet etching peels off the substrate, arsenide quantum dot can peel off through stirring corrosive liquid is whole to leave the hole in original quantum dot position, the hole enables corrosive liquid and nearby not corroded aluminum arsenide layer contact area increase, improves the corrosion rate of sacrificial layer in wet etching process.
The invention provides a gallium arsenide battery epitaxial structure, which comprises a substrate, a sacrificial layer and a battery layer, wherein the sacrificial layer and the battery layer are arranged on the substrate and are sequentially superposed along the direction far away from the substrate; the sacrificial layer comprises a laminated unit, and the laminated unit comprises a film layer which can be corroded by wet etching liquid and a quantum dot layer which is clamped in the film layer and cannot be corroded by the wet etching liquid.
Preferably, the film layer which can be etched by the wet etching solution is a first aluminum arsenide layer and a second aluminum arsenide layer, the quantum dot layer which cannot be etched by the wet etching solution is an arsenide quantum dot layer, and the first aluminum arsenide layer, the arsenide quantum dot layer and the second aluminum arsenide layer are sequentially stacked in a direction away from the substrate.
Preferably, the arsenide quantum dot layer adopts indium arsenide quantum dot material.
Preferably, the thickness of the arsenide quantum dot layer ranges from 2 to 5 molecular monolayers.
Preferably, the thickness of the first aluminum arsenide layer ranges from 2 nm to 10 nm.
Preferably, the thickness of the second aluminum arsenide layer ranges from 2 nm to 10 nm.
Preferably, the number of the laminated units is plural, and the laminated units are sequentially laminated in a direction away from the substrate.
Preferably, the number of the laminated units ranges from 2 to 10.
The invention also provides a preparation method of the gallium arsenide battery epitaxial structure, which comprises the following steps of preparing and forming a sacrificial layer and a battery layer on the substrate in sequence, wherein the step of preparing and forming the sacrificial layer comprises the following steps: preparing and forming a laminated unit on the substrate, wherein the preparing and forming of the laminated unit comprises preparing and forming a film layer which can be corroded by wet etching liquid and a quantum dot layer which is clamped in the film layer and cannot be corroded by the wet etching liquid.
Preferably, the arsenide quantum dot layer is prepared and formed by adopting a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method, a vapor phase epitaxy method or a physical vapor deposition method, the preparation of the arsenide quantum dot layer is interrupted for 10-60 s at the later stage of the formation of the arsenide quantum dot layer, and arsine gas is introduced into the process chamber; then, the preparation of the arsenide quantum dot layer is continued.
The invention has the beneficial effects that: according to the gallium arsenide battery epitaxial structure provided by the invention, the sacrificial layer is set to be the arsenide quantum dot layer of which the middle interlayer is not corroded by the wet corrosion liquid, the upper layer and the lower layer are sandwich structures of the aluminum arsenide layers which are corroded by the wet corrosion liquid, when the substrate is stripped through the wet corrosion, the upper aluminum arsenide layer and the lower aluminum arsenide layer which are easy to corrode normally corrode from the edge area to the middle area, when the position of the arsenic compound quantum dot is corroded, the arsenic compound quantum dot can be stripped integrally through stirring the corrosion liquid, so that a hole is reserved at the position of the original quantum dot, and the hole can increase the contact area of the corrosion liquid and the upper aluminum arsenide layer which is not corroded nearby, so that the corrosion rate of the sacrificial layer in the wet corrosion process is improved, and the stripping efficiency of the substrate and the battery layer is improved.
Drawings
Fig. 1 is a schematic sectional view of the structure of an epitaxial structure of a gallium arsenide cell in embodiment 1 of the present invention;
fig. 2 is a schematic cross-sectional view of the structure of the sacrificial layer of the epitaxial structure of the gallium arsenide cell in embodiment 1 of the present invention;
FIG. 3 is a schematic diagram of the sea-island structure of the sacrificial layer of the epitaxial structure of the GaAs cell in wet etching in embodiment 1 of the present invention;
fig. 4 is a schematic sectional view of the structure of the epitaxial structure of the gallium arsenide cell in embodiment 2 of the present invention.
Wherein the reference numbers indicate:
1. a substrate; 2. a sacrificial layer; 20. a lamination unit; 201. a first aluminum arsenide layer; 202. an arsenide quantum dot layer; 203. a second aluminum arsenide layer; 3. and (5) a battery layer.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following describes a gallium arsenide cell epitaxial structure and a method for manufacturing the same in detail with reference to the accompanying drawings and the detailed description.
Example 1:
the embodiment provides a gallium arsenide cell epitaxial structure, as shown in fig. 1 and fig. 2, which includes a substrate 1, and a sacrificial layer 2 and a cell layer 3 disposed on the substrate 1, where the sacrificial layer 2 and the cell layer 3 are sequentially stacked along a direction away from the substrate 1, the sacrificial layer 2 includes a stacked unit 20, and the stacked unit 20 includes a film layer that can be corroded by a wet etching solution and a quantum dot layer that is sandwiched in the film layer and cannot be corroded by the wet etching solution.
Wherein, the film layer which can be corroded by the wet corrosion solution is a first aluminum arsenide layer 201 and a second aluminum arsenide layer 203, the quantum dot layer which can not be corroded by the wet corrosion solution is an arsenide quantum dot layer 202, and the first aluminum arsenide layer 201, the arsenide quantum dot layer 202 and the second aluminum arsenide layer 203 are sequentially stacked along the direction far away from the substrate 1. The wet etching solution is hydrofluoric acid solution.
Wherein, the laminated unit 20 is a sandwich structure. The arsenide quantum dot layer 202 in the laminated unit 20 is microscopically formed by arranging a plurality of spherical arsenide quantum dots, so that the orthographic projection of the arsenide quantum dot layer 202 on the first aluminum arsenide layer 201 and the second aluminum arsenide layer 203 is in a sea-island shape, that is, the first aluminum arsenide layer 201 and the second aluminum arsenide layer 203 correspond to the sea, and a plurality of circular quantum dot islands are distributed on the first aluminum arsenide layer 201 and the second aluminum arsenide layer 203, as shown in fig. 3. When the substrate 1 is stripped through wet etching, the epitaxial structure of the gallium arsenide cell is placed in a hydrofluoric acid solution, the first aluminum arsenide layer 201 and the second aluminum arsenide layer 203 which are easy to corrode normally begin to corrode from the edge area to the middle area, when the quantum dot islands are corroded, the arsenide quantum dots cannot be corroded by corrosive liquid, the quantum dot islands can be stripped integrally through stirring, and therefore holes are left at the positions of the original quantum dot islands, the contact areas between the corrosive liquid and the nearby un-corroded first aluminum arsenide layer 201 and second aluminum arsenide layer 203 (namely sea) can be increased through the holes, the corrosion rate of the sacrificial layer 2 in the wet etching process is increased, and the stripping efficiency of the substrate 1 and the cell layer 3 is improved.
Preferably, the arsenide quantum dot layer 202 is made of indium arsenide quantum dot material. Of course, other arsenide quantum dot materials that cannot be etched by the hydrofluoric acid solution may be used for the arsenide quantum dot layer 202, and the peeling rate between the substrate 1 and the cell layer 3 can be increased by the etching process.
In this embodiment, the thickness of the arsenide quantum dot layer 202 is in the range of 2 to 5 molecular monolayers. The thickness of the first aluminum arsenide layer 201 is 2 to 10 nm. The thickness of the second aluminum arsenide layer 203 is 2-10 nm. The thicker the overall thickness of the sacrificial layer 2, the more reliably the wet etching will not damage the cell layer 3.
In addition, in this embodiment, the gallium arsenide battery epitaxial structure is a double-junction gallium arsenide battery epitaxial structure, and the battery layer 3 includes a first ohmic contact layer, a top battery window layer, a top battery emitter region, a top battery base region, a top battery BSF layer, a tunneling junction, a bottom battery window layer, a bottom battery emitter region, a bottom battery base region, a bottom battery BSF layer, and a second ohmic contact layer, which are sequentially stacked away from the sacrificial layer 2. The first ohmic contact layer is made of GaAs materials and is 200nm thick; the top battery window layer is made of AlGaInP materials, and the thickness of the top battery window layer is 30 nm; the materials of the top cell emitter region and the top cell base region are GaInP, the thickness of the top cell emitter region is 650nm, and the thickness of the top cell base region is 6 mu m; the material of the top cell BSF layer is AlGaInP, and the thickness of the top cell BSF layer is 100 nm. The tunneling junction material is GaAs/AlGaAs, and the thickness of the tunneling junction is 50 nm. The material of the bottom cell window layer is AlGaAs, and the thickness of the bottom cell window layer is 30 nm. The materials of the emitter region and the base region of the bottom cell are GaAs, the thickness of the emitter region of the bottom cell is 650nm, and the thickness of the base region of the bottom cell is 3 μm. The material of the BSF layer of the bottom battery is AlGaAs, and the thickness of the BSF layer of the bottom battery is 100 nm. And the second ohmic contact layer is made of GaAs material and has the thickness of 200 nm.
In the present embodiment, the substrate 1 is a gallium arsenide (GaAs) substrate, a germanium (Ge) substrate, or a silicon carbide (SiC) substrate, but is not limited to the substrate 1 of the above-described material. A buffer layer is arranged between the substrate 1 and the sacrificial layer 2, and the buffer layer is made of gallium arsenide materials and has the thickness of 100-1000 nm.
Based on the above structure of the gallium arsenide cell epitaxial structure, this embodiment further provides a method for preparing the gallium arsenide cell epitaxial structure, including sequentially preparing and forming a sacrificial layer and a cell layer on a substrate, where preparing and forming the sacrificial layer includes: preparing and forming a laminated unit on a substrate, wherein the preparing and forming of the laminated unit comprises preparing and forming a film layer which can be corroded by wet etching liquid and a quantum dot layer which is clamped in the film layer and cannot be corroded by the wet etching liquid.
The method for preparing the arsenide quantum dot layer specifically comprises the following steps: preparing an arsenide quantum dot layer for forming a sacrificial layer by adopting a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method, a vapor phase epitaxy method or a physical vapor deposition method, interrupting the preparation of the arsenide quantum dot layer for 10-60 s at the later stage of the formation of the arsenide quantum dot layer, and introducing arsine gas into the process chamber; this can facilitate the migration of quantum dot atoms into dots. Then, the preparation of the completed arsenide quantum dot layer is continued.
In addition, each film layer in the battery layer is prepared and formed by adopting a traditional and mature preparation process and method, and details are not repeated here.
The embodiment also provides a substrate stripping method of the gallium arsenide battery epitaxial structure, which comprises the following steps: putting the gallium arsenide battery epitaxial structure into a hydrofluoric acid solution for corrosion and stripping the substrate; during the corrosion stripping, the hydrofluoric acid solution is stirred.
When the substrate is stripped through wet etching, the epitaxial structure of the gallium arsenide cell is placed in a hydrofluoric acid solution, the first aluminum arsenide layer and the second aluminum arsenide layer which are easy to etch normally start to etch from the edge area to the middle area, when the quantum dot island is etched, the arsenide quantum dots cannot be etched by etching liquid, the quantum dot island can be integrally stripped through stirring, and therefore holes are left in the position of the original quantum dot island, the contact area between the etching liquid and the first aluminum arsenide layer and the second aluminum arsenide layer (namely sea) which are not etched nearby can be increased through the holes, the etching rate of the sacrificial layer in the wet etching process is increased, and stripping efficiency of the substrate and the cell layer is improved.
Example 2:
the present embodiment provides a gallium arsenide cell epitaxial structure, which is different from that in embodiment 1 in that, as shown in fig. 4, on the basis of the gallium arsenide cell epitaxial structure in embodiment 1, the number of the stacked units 20 is plural, and the stacked units 20 are stacked in order in a direction away from the substrate 1.
So set up, can increase the whole thickness of sacrificial layer 2 to make battery layer 3 be difficult to by the corrosion damage in the wet etching process, guaranteed that gallium arsenide battery epitaxial structure's substrate 1 peels off the yield.
Preferably, the number of the laminated units 20 is in the range of 2 to 10. In the present embodiment, the number of the laminated units 20 is 2.
Other structures of the epitaxial structure of the gallium arsenide cell, the preparation method thereof and the substrate stripping method in this embodiment are the same as those in embodiment 1, and are not described herein again.
The gallium arsenide epitaxial structure provided in embodiment 1-2 has the beneficial effects that the sacrificial layer is set as the middle interlayer, the middle interlayer is the arsenide quantum dot layer that cannot be corroded by the wet etching solution, the upper layer and the lower layer are the sandwich structure of the aluminum arsenide layer that can be corroded by the wet etching solution, when the substrate is stripped by the wet etching, the upper and lower aluminum arsenide layers that are easy to corrode normally corrode from the edge area to the middle area, when the position of the arsenide quantum dot is corroded, the arsenide quantum dot can be stripped entirely by stirring the etching solution, so as to leave a hole at the position of the original quantum dot island, and the hole can increase the contact area between the etching solution and the upper and lower aluminum arsenide layers that are not corroded nearby, thereby increasing the corrosion rate of the sacrificial layer in the wet etching process, and further improving the stripping efficiency of the substrate and the battery layer.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. The gallium arsenide battery epitaxial structure is characterized by comprising a substrate, a sacrificial layer and a battery layer, wherein the sacrificial layer and the battery layer are arranged on the substrate and are sequentially overlapped along the direction far away from the substrate; the sacrificial layer comprises a laminated unit, and the laminated unit comprises a film layer which can be corroded by wet etching liquid and a quantum dot layer which is clamped in the film layer and cannot be corroded by the wet etching liquid.
2. The epitaxial structure for gallium arsenide cell of claim 1 wherein the film layers that can be etched by the wet etching solution are a first aluminum arsenide layer and a second aluminum arsenide layer, and the quantum dot layer that cannot be etched by the wet etching solution is an arsenide quantum dot layer, and the first aluminum arsenide layer, the arsenide quantum dot layer and the second aluminum arsenide layer are stacked in this order in a direction away from the substrate.
3. The gallium arsenide cell epitaxial structure of claim 2 wherein the arsenide quantum dot layer is an indium arsenide quantum dot material.
4. The epitaxial structure for gallium arsenide cells as claimed in claim 2 wherein the thickness of the arsenide quantum dot layer is in the range of 2-5 molecular monolayers.
5. The epitaxial structure for gallium arsenide cells of claim 2 wherein the thickness of the first aluminum arsenide layer is in the range of 2 to 10 nm.
6. The epitaxial structure for gallium arsenide cells of claim 2 wherein the thickness of the second aluminum arsenide layer is in the range of 2 to 10 nm.
7. The epitaxial structure for gallium arsenide cell according to claim 1, wherein the number of said stacked units is plural, and said stacked units are stacked in order in a direction away from said substrate.
8. The epitaxial structure for gallium arsenide cell according to claim 7, wherein the number of said stacked units is in the range of 2 to 10.
9. A method for fabricating a gallium arsenide epitaxial structure as claimed in any of claims 1-8 comprising fabricating a sacrificial layer and a cell layer on a substrate sequentially, the fabricating to form the sacrificial layer comprising: preparing and forming a laminated unit on the substrate, wherein the preparing and forming of the laminated unit comprises preparing and forming a film layer which can be corroded by wet etching liquid and a quantum dot layer which is clamped in the film layer and cannot be corroded by the wet etching liquid.
10. The method according to claim 9, wherein the epitaxial structure of the gallium arsenide cell is the epitaxial structure of the gallium arsenide cell according to claim 2, and the method comprises preparing the arsenide quantum dot layer forming the sacrificial layer by using a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method, a vapor phase epitaxy method or a physical vapor deposition method, interrupting the preparation of the arsenide quantum dot layer for 10-60 s at the later stage of the formation of the arsenide quantum dot layer, and introducing arsine gas into the process chamber; then, the preparation of the arsenide quantum dot layer is continued.
CN201811425935.9A 2018-11-27 2018-11-27 Gallium arsenide battery epitaxial structure and preparation method thereof Pending CN111223947A (en)

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