CN111221747B - 一种随机种子保存的方法、装置、存储介质及计算机设备 - Google Patents
一种随机种子保存的方法、装置、存储介质及计算机设备 Download PDFInfo
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- CN111221747B CN111221747B CN202010028276.6A CN202010028276A CN111221747B CN 111221747 B CN111221747 B CN 111221747B CN 202010028276 A CN202010028276 A CN 202010028276A CN 111221747 B CN111221747 B CN 111221747B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
- G06F12/0646—Configuration or reconfiguration
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/14—Protection against unauthorised use of memory or access to memory
- G06F12/1408—Protection against unauthorised use of memory or access to memory by using cryptography
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1012—Design facilitation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
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CN202010028276.6A CN111221747B (zh) | 2020-01-10 | 2020-01-10 | 一种随机种子保存的方法、装置、存储介质及计算机设备 |
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CN202010028276.6A CN111221747B (zh) | 2020-01-10 | 2020-01-10 | 一种随机种子保存的方法、装置、存储介质及计算机设备 |
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CN111221747A CN111221747A (zh) | 2020-06-02 |
CN111221747B true CN111221747B (zh) | 2022-02-18 |
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CN112083891B (zh) * | 2020-09-22 | 2022-12-06 | 深圳芯邦科技股份有限公司 | 一种存储器中数据块的检测方法及相关设备 |
TWI774183B (zh) * | 2021-01-08 | 2022-08-11 | 瑞昱半導體股份有限公司 | 具有位址打亂機制的記憶體存取裝置及其記憶體存取方法 |
Citations (6)
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CN106170773A (zh) * | 2014-01-09 | 2016-11-30 | 桑迪士克科技有限责任公司 | 用于裸芯上缓冲式非易失性存储器的选择性回拷 |
CN107391026A (zh) * | 2016-04-27 | 2017-11-24 | 慧荣科技股份有限公司 | 闪存装置及闪存存储管理方法 |
CN107403646A (zh) * | 2016-04-27 | 2017-11-28 | 慧荣科技股份有限公司 | 闪存装置及闪存存储管理方法 |
CN108255464A (zh) * | 2016-12-28 | 2018-07-06 | 北京忆恒创源科技有限公司 | 数据加扰方法、解扰方法及其装置 |
US10141050B1 (en) * | 2017-04-27 | 2018-11-27 | Pure Storage, Inc. | Page writes for triple level cell flash memory |
CN110297603A (zh) * | 2019-06-25 | 2019-10-01 | 深圳忆联信息系统有限公司 | 基于固态硬盘的随机写性能提升方法、装置和计算机设备 |
Family Cites Families (1)
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US20160094339A1 (en) * | 2014-09-30 | 2016-03-31 | Sandisk Technologies Inc. | Scrambling schemes for scrambling and descrambling data |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106170773A (zh) * | 2014-01-09 | 2016-11-30 | 桑迪士克科技有限责任公司 | 用于裸芯上缓冲式非易失性存储器的选择性回拷 |
CN107391026A (zh) * | 2016-04-27 | 2017-11-24 | 慧荣科技股份有限公司 | 闪存装置及闪存存储管理方法 |
CN107403646A (zh) * | 2016-04-27 | 2017-11-28 | 慧荣科技股份有限公司 | 闪存装置及闪存存储管理方法 |
CN108255464A (zh) * | 2016-12-28 | 2018-07-06 | 北京忆恒创源科技有限公司 | 数据加扰方法、解扰方法及其装置 |
US10141050B1 (en) * | 2017-04-27 | 2018-11-27 | Pure Storage, Inc. | Page writes for triple level cell flash memory |
CN110297603A (zh) * | 2019-06-25 | 2019-10-01 | 深圳忆联信息系统有限公司 | 基于固态硬盘的随机写性能提升方法、装置和计算机设备 |
Non-Patent Citations (1)
Title |
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Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives;Yu Cai .etc;《Proceedings of the IEEE》;20170818;第105卷(第9期);第1-39页 * |
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Effective date of registration: 20220118 Address after: 518000 room B125, 1f, Shunfeng industrial plant, No. 2 Hongliu Road, Fubao community, Fubao street, Futian District, Shenzhen, Guangdong Province Applicant after: Shenzhen deminli optoelectronics Co.,Ltd. Address before: 2501, 2401, block a, building 1, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen, Guangdong 518000 Applicant before: Shenzhen deminli Technology Co.,Ltd. |
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Address after: 518000 room B125, 1f, Shunfeng industrial plant, No. 2 Hongliu Road, Fubao community, Fubao street, Futian District, Shenzhen, Guangdong Province Patentee after: Shenzhen Jiaminli Photoelectric Co.,Ltd. Address before: 518000 room B125, 1f, Shunfeng industrial plant, No. 2 Hongliu Road, Fubao community, Fubao street, Futian District, Shenzhen, Guangdong Province Patentee before: Shenzhen deminli optoelectronics Co.,Ltd. |
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