CN111221023A - Ultraviolet light radiation accumulation measuring circuit based on memristor array - Google Patents
Ultraviolet light radiation accumulation measuring circuit based on memristor array Download PDFInfo
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- CN111221023A CN111221023A CN201911022687.8A CN201911022687A CN111221023A CN 111221023 A CN111221023 A CN 111221023A CN 201911022687 A CN201911022687 A CN 201911022687A CN 111221023 A CN111221023 A CN 111221023A
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- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/17—Circuit arrangements not adapted to a particular type of detector
Abstract
The invention discloses an ultraviolet light radiation accumulation measuring circuit based on a memristor array, which comprises an ultraviolet light receiving module, a memristor amplifying module, a measuring switch, a memristor array module, a memristor resetting module and a memristor error conditioning module, wherein the ultraviolet light receiving module is connected with the memristor amplifying module; the ultraviolet light receiving module is connected with the input end of the memristor amplifying module, the memristor amplifying module is connected with the measuring switch, the other end of the switch is connected with the memristor array module and the memristor tissue resetting module, and the memristor array module is connected with the output end of the memristor resetting module and then connected with the input end of the memristor error conditioning module; the ultraviolet light receiving module comprises bias voltage, a protective resistor, an avalanche diode and an ultraviolet polaroid; the output end of the bias voltage is connected with a protection resistor, and the other end of the protection resistor is connected with an avalanche diode. According to the invention, the cumulant of ultraviolet radiation is measured by using the resistance value change of the memristor, so that the cumulant measurement accuracy is improved, and the problem of overhigh loss of a traditional measurement circuit is solved.
Description
Technical Field
The invention belongs to the technical field of ultraviolet radiation accumulation measurement, and particularly relates to an ultraviolet radiation accumulation measurement circuit based on a memristor array.
Background
Ultraviolet radiation (ultrasound radiation) refers to optical radiation with a wavelength less than that of visible radiation, and for ultraviolet radiation, the spectrum between 100 and 400nm is generally divided into: UVA wave band (315-400 nm); UVB wave band (280-315 nm); the UVC wave band (100-280 nm) and ultraviolet radiation accumulation measuring circuit is a measuring circuit capable of measuring the total ultraviolet radiation dose of an object under one continuous irradiation or multiple repeated irradiation of ultraviolet radiation within a certain time period.
However, the existing ultraviolet radiation accumulation measuring circuit has some defects because the measurement of ultraviolet radiation is complicated, and the environment is different, so that the final ultraviolet radiation accumulation measuring circuit is different. There are several disadvantages to date: most ultraviolet detectors are disposable in measurement, and then the measurement and detection can be finished through processing of a single chip microcomputer and the like. However, the radiation intensity of ultraviolet radiation can change continuously during measurement due to non-human factors such as weather, temperature and the like, measurement data can be unstable during subsequent cumulative measurement, and under the condition of a complex environment, although the cumulative dose of ultraviolet radiation can be measured, the measurement accuracy is not high; secondly, the collected data still need to pass through measuring circuit, singlechip and display etc. follow-up processing circuit, and the more complicated circuit that passes through, then long-time measurement can lead to the loss of measurement data also can be more serious.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an ultraviolet radiation accumulation measuring circuit based on a memristor array, and solve the problems that the traditional ultraviolet radiation measuring circuit is low in accuracy and large in loss in the measuring circuit.
In order to solve the technical problem, the application adopts the following technical scheme:
an ultraviolet light radiation accumulation measuring circuit based on a memristor array comprises an ultraviolet light receiving module, a memristor amplifying module, a measuring switch S1, a memristor array module, a memristor resetting module and a memristor error conditioning module; wherein:
the output end of the ultraviolet light receiving module is connected with the input end of the memristor amplifying module, the output end of the memristor amplifying module is connected with the measuring switch S1, the other end of the switch S1 is respectively connected with the input ends of the memristor array module and the memristor tissue reset module, and the output end of the memristor array module is connected with the output end of the memristor reset module and then connected with the input end of the memristor error conditioning module;
the ultraviolet light receiving module comprises a bias voltage V1, a protection resistor R1, an avalanche diode APD and an ultraviolet polaroid; wherein: the output end of the bias voltage V1 is connected with a protection resistor R1, the other end of the protection resistor R1 is connected with an Avalanche Photo Diode (APD), an ultraviolet polaroid covers the surface of the avalanche photo diode, and the output end of the avalanche photo diode is connected with the input end of the memristor amplification module.
Further, the memristor amplifying module comprises a far computing amplifier A1, a memristor Ms1, a memristor Ms2, a resistor R2, a capacitor C1 and an operational amplifier A1, a positive power supply VCC1 and a negative power supply VCC 2; wherein:
the anti-phase end of the operational amplifier A1 is connected with the output end of an avalanche diode in the ultraviolet light receiving module, the anti-phase end of the operational amplifier A1 is connected with the non-doped end of the memristor Ms1 and the capacitor C1 at the same time, the doped end of the memristor Ms1 is connected with the doped end of the memristor Ms2, the other end of the capacitor C1 and the non-doped end of the memristor Ms2 are both connected with the output end of the operational amplifier A1, the in-phase end of the operational amplifier A1 is connected with the resistor R2, the other end of the resistor R2 is grounded, and the output end of the operational amplifier A1 is connected with the measuring switch S1.
Further, the memristor array module comprises n memristor array blocks, wherein n is a natural number greater than or equal to 2 and less than or equal to 8; each memristor array block comprises m reverse parallel memristors and m forward parallel memristors, wherein m is a natural number which is more than or equal to 2 and less than or equal to 10; the non-doped ends of the m reverse parallel memristors are connected with the non-doped ends of the m forward parallel memristors; the doped ends of m anti-parallel memristors in the 1 st memristor array block are connected with the other end of the switch S1; the doped ends of m forward memristors in the nth memristor array block are all grounded; the doped ends of m forward memristors in each memristor array block are connected with the doped ends of m anti-parallel memristors in the next memristor array block.
Further, the memristor reset module includes a power supply V2, a resistor R3, and a switch S2; the point A and the point B are respectively led out from two ends of the memristor array module, in the memristor array module, m reverse parallel memristor doped ends of the 1 st memristor array block are connected with the point A, m forward parallel memristor doped ends of the nth memristor array block are connected with the point B, the other end of the point A is connected with the negative electrode of a power supply V2 and a measuring switch S1, the other end of the point B is grounded and connected with a switch S2, the positive electrode of the power supply V2 is connected with a resistor R3, the positive electrode of the power supply V2 is connected with a resistor R3, and the other end of the resistor R3 is connected with the other end of the switch S2.
Further, the memristor error conditioning module comprises an operational amplifier A2, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a power supply V3, a power supply V4, a single-pole double-throw switch S3, a memristor Mz1, a memristor Mz2, a resistor R8, and an operational amplifier A2 positive power supply VSS1 and a negative power supply VSS 2; wherein:
the reverse end of the operational amplifier A2 is connected with a resistor R5 and a resistor R6, the other end of the resistor R5 is connected with m reverse parallel memristor non-doped ends of an nth memristor array block and m forward parallel memristor non-doped ends of the nth memristor array block, and the other end of the resistor R6 is connected with the output end of the operational amplifier A2;
the same-direction end of the operational amplifier A2 is connected with a resistor R4 and a resistor R7, the other end of the resistor R7 is grounded, the other end of the resistor R4 is connected with a non-doped end of a memristor Mz1 and a resistor R8, a doped end of the memristor Mz1 is connected with a doped end of the memristor Mz2, a non-doped end of the memristor Mz2 is connected with a switch S3, the other end of the resistor R8 is connected with a positive electrode of a power supply V3 and a negative electrode of a power supply V4, and a negative electrode of the power supply V3 and a positive electrode of the power supply V4 are connected with the other end of the switch S39.
Further, the memristor is a Hewlett packard memristor.
Compared with the prior art, the invention has the beneficial technical effects that:
(1) the invention completes the measurement of the ultraviolet radiation accumulated dose by using the memory effect of the memristor. The invention converts the photoelectricity into the electric signal according to the avalanche diode, the current in the circuit changes along with the change of the optical power, the resistance value change of the memristor changes according to the change of the current flowing through the memristor, and the change of the induced current can be realized at any time, thereby realizing the measurement of the unstable change of the ultraviolet radiation intensity caused by the environmental change.
(2) The memristors of the memristor-based power amplifier belong to passive devices, and compared with a single chip microcomputer, the loss is lower.
(3) According to the memristor array, each forward memristor can independently complete measurement, more measurement data can be provided, and the stability and accuracy of a measurement circuit are improved.
Drawings
FIG. 1 is a system block diagram of an ultraviolet radiation accumulation measurement circuit based on a memristor array in accordance with the present disclosure;
FIG. 2 is a memristor amplification block schematic;
FIG. 3 is a memristor array module schematic;
FIG. 4 is a memristor reset module circuit schematic;
FIG. 5 is a circuit schematic diagram of a memristor error conditioning module
FIG. 6 is a schematic diagram of an ultraviolet light radiation accumulation measurement circuit based on a memristor array;
FIG. 7 is a graph of resistance change of a memristor Ma4 versus time;
FIG. 8 is a graph of total resistance versus time for a memristor array;
FIG. 9 is a graph of total loop current versus time;
the details of the present invention are explained in further detail below with reference to the drawings and examples.
Detailed Description
As shown in fig. 1, the ultraviolet radiation accumulation measuring circuit based on the memristor array comprises an ultraviolet light receiving module, a memristor amplifying module, a measuring switch S1, a memristor array module, a memristor resetting module and a memristor error conditioning module; wherein:
the output end of the ultraviolet light receiving module is connected with the input end of the memristor amplifying module, the output end of the memristor amplifying module is connected with the measuring switch S1, the other end of the switch S1 is respectively connected with the input ends of the memristor array module and the memristor tissue reset module, and the output end of the memristor array module is connected with the output end of the memristor reset module and then connected with the input end of the memristor error conditioning module;
the ultraviolet light receiving module comprises a bias voltage V1, a protection resistor R1, an avalanche diode APD and an ultraviolet polaroid; wherein: the output end of the bias voltage V1 is connected with a protection resistor R1, the other end of the protection resistor R1 is connected with an Avalanche Photo Diode (APD), an ultraviolet polaroid covers the surface of the avalanche photo diode, and the output end of the avalanche photo diode is connected with the input end of the memristor amplification module.
In the technical scheme, the bias voltage V1 is used for providing bias voltage for the avalanche diode APD to obtain higher gain factor, and the avalanche diode is used for converting an optical signal coming from a light source and passing through the ultraviolet polarizer into a current signal; the memristor amplifying module is used for converting a current signal into a voltage signal and enhancing an output signal, the memristor array module is used for converting the voltage signal into a resistance change signal, the memristor resetting module is used for resetting the memristor array module, and the memristor error conditioning module is used for eliminating error interference in the resistance change signal.
Preferably, the memristor amplifying module is shown in fig. 2 and comprises a far computing amplifier a1, a memristor Ms1, a memristor Ms2, a resistor R2, a capacitor C1, and an operational amplifier a1, a positive power supply VCC1 and a negative power supply VCC 2; wherein:
the inverting terminal of the operational amplifier A1 is connected with the output terminal of an avalanche diode in the ultraviolet light receiving module, the inverting terminal of the operational amplifier A1 is connected with the non-doped terminal of the memristor Ms1 and the capacitor C1 at the same time, the doped terminal of the memristor Ms1 is connected with the doped terminal of the memristor Ms2, the other terminal of the capacitor C1 and the non-doped terminal of the memristor Ms2 are both connected with the output terminal of the operational amplifier A1, the in-phase terminal of the operational amplifier A1 is connected with the resistor R2, the other terminal of the resistor R2 is grounded, and the output terminal of the operational amplifier A1 is connected with the measurement switch S1.
The memristor amplifying module adopts the circuit structure, and has the advantages that compared with the traditional amplifying circuit, the memristor amplifying circuit can be used for programming control over the resistance value of the memristor, so that programming control over performance parameters of the circuit is achieved, and the characteristics of resistance value programmability and non-volatility are achieved.
Preferably, the structure of the memristor array module is as shown in fig. 3, and the memristor array module includes n memristor array blocks, where n is a natural number greater than or equal to 2 and less than or equal to 8; each memristor array block comprises m reverse parallel memristors and m forward parallel memristors, wherein m is a natural number which is more than or equal to 2 and less than or equal to 10; the non-doped ends of the m reverse parallel memristors are connected with the non-doped ends of the m forward parallel memristors; the doped ends of m anti-parallel memristors in the 1 st memristor array block are connected with the other end of the switch S1; the doped ends of m forward memristors in the nth memristor array block are all grounded; the doped ends of m forward memristors in each memristor array block are connected with the doped ends of m anti-parallel memristors in the next memristor array block.
The measuring module adopts above-mentioned circuit structure, and its advantage lies in, and the total resistance of recalling resistance array module is invariable under invariable voltage, and a plurality of forward memristors have improved circuit measurement stability, and measured data is more accurate.
Preferably, the memristor reset module structure is as shown in fig. 4, and includes a power supply V2, a resistor R3, and a switch S2.
The point A and the point B are respectively led out from two ends of the memristor array module, in the memristor array module, m reverse parallel memristor doped ends of the 1 st memristor array block are connected with the point A, m forward parallel memristor doped ends of the nth memristor array block are connected with the point B, the other end of the point A is connected with the negative electrode of a power supply V2 and a measuring switch S1, the other end of the point B is grounded and connected with a switch S2, the positive electrode of the power supply V2 is connected with a resistor R3, the positive electrode of the power supply V2 is connected with a resistor R3, and the other end of the resistor R3 is connected with the other end of the switch S2.
The memristor reset circuit adopts the structure, and has the advantages that the designed reset circuit can reset each memristor simultaneously, and the reset circuit can quickly and efficiently reset each memristor under the condition of low reset voltage.
Preferably, the memristor error conditioning module is configured as shown in fig. 5, and includes an operational amplifier a2, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a power supply V3, a power supply V4, a single-pole double-throw switch S3, a memristor Mz1, a memristor Mz2, a resistor R8, and an operational amplifier a2 positive power supply VSS1 and a negative power supply VSS 2; wherein:
the reverse end of the operational amplifier A2 is connected with the resistor R5 and the resistor R6, the other end of the resistor R5 is connected with the m reverse parallel memristor non-doped ends of the nth memristor array block and the m forward parallel memristor non-doped ends of the nth memristor array block, and the other end of the resistor R6 is connected with the output end of the operational amplifier A2;
the same-direction end of the operational amplifier A2 is connected with a resistor R4 and a resistor R7, the other end of the resistor R7 is grounded, the other end of the resistor R4 is connected with a non-doped end of a memristor Mz1 and a resistor R8, a doped end of the memristor Mz1 is connected with a doped end of the memristor Mz2, a non-doped end of the memristor Mz2 is connected with a switch S3, the other end of the resistor R8 is connected with a positive electrode of a power supply V3 and a negative electrode of a power supply V4, and a negative electrode of the power supply V3 and a positive electrode of the power supply V4 are connected with the other end of the switch S39.
As shown in fig. 7, when m is 4 and n is 2, the resistance of the memristor Ma4 is not changed in the first short period of time, but the resistance of the memristor Ma4 is continuously increased from 500 Ω to 16000 Ω with the passage of time.
As shown in fig. 8, even if the memristor Ma4 is continuously increased when m is 4 and n is 2, the overall resistance of the memristor array is not changed, because of the existence of the antiparallel memristors, the antiparallel memristors are continuously decreased while the forward parallel memristors are increased, and the decrease is the same as the increase of the forward parallel memristors.
As shown in fig. 9, when m is 4 and n is 2, the photocurrent generated by the uv radiation does not change with the resistance of the individual memristors because the total resistance of the circuit is constant.
The ultraviolet radiation accumulation measuring circuit based on the memristor array measures the accumulation amount of ultraviolet radiation within a period of time, so the design requirement is that the only variable in the whole circuit is the resistance value of a forward memristor, as can be known from fig. 8 and 9, the total resistance value in a memristor array module is constant, and the current of the whole circuit does not change along with the change of a single memristor, so that the ultraviolet radiation accumulation amount can be more accurately measured by the whole circuit.
Claims (6)
1. An ultraviolet light radiation accumulation measuring circuit based on a memristor array is characterized by comprising an ultraviolet light receiving module, a memristor amplifying module, a measuring switch S1, a memristor array module, a memristor resetting module and a memristor error conditioning module; wherein:
the output end of the ultraviolet light receiving module is connected with the input end of the memristor amplifying module, the output end of the memristor amplifying module is connected with the measuring switch S1, the other end of the switch S1 is respectively connected with the input ends of the memristor array module and the memristor tissue reset module, and the output end of the memristor array module is connected with the output end of the memristor reset module and then connected with the input end of the memristor error conditioning module;
the ultraviolet light receiving module comprises a bias voltage V1, a protection resistor R1, an avalanche diode APD and an ultraviolet polaroid; wherein: the output end of the bias voltage V1 is connected with a protection resistor R1, the other end of the protection resistor R1 is connected with an Avalanche Photo Diode (APD), an ultraviolet polaroid covers the surface of the avalanche photo diode, and the output end of the avalanche photo diode is connected with the input end of the memristor amplification module.
2. The memristor-array-based ultraviolet light radiation accumulation measurement circuit, as claimed in claim 1, wherein the memristor amplification module comprises a far operational amplifier a1, a memristor Ms1, a memristor Ms2, a resistor R2, a capacitor C1, and an operational amplifier a1, a positive power supply VCC1 and a negative power supply VCC 2; wherein:
the anti-phase end of the operational amplifier A1 is connected with the output end of an avalanche diode in the ultraviolet light receiving module, the anti-phase end of the operational amplifier A1 is connected with the non-doped end of the memristor Ms1 and the capacitor C1 at the same time, the doped end of the memristor Ms1 is connected with the doped end of the memristor Ms2, the other end of the capacitor C1 and the non-doped end of the memristor Ms2 are both connected with the output end of the operational amplifier A1, the in-phase end of the operational amplifier A1 is connected with the resistor R2, the other end of the resistor R2 is grounded, and the output end of the operational amplifier A1 is connected with the measuring switch S1.
3. The memristor-array-based ultraviolet light radiation accumulation measurement circuit of claim 1, wherein the memristor array module comprises n memristor array blocks, wherein n is a natural number greater than or equal to 2 and less than or equal to 8; each memristor array block comprises m reverse parallel memristors and m forward parallel memristors, wherein m is a natural number which is more than or equal to 2 and less than or equal to 10; the non-doped ends of the m reverse parallel memristors are connected with the non-doped ends of the m forward parallel memristors; the doped ends of m anti-parallel memristors in the 1 st memristor array block are connected with the other end of the switch S1; the doped ends of m forward memristors in the nth memristor array block are all grounded; the doped ends of m forward memristors in each memristor array block are connected with the doped ends of m anti-parallel memristors in the next memristor array block.
4. The memristor-array-based ultraviolet light radiation accumulation measurement circuit of claim 1, wherein the memristor reset module comprises a power supply V2, a resistor R3, and a switch S2; the point A and the point B are respectively led out from two ends of the memristor array module, in the memristor array module, m reverse parallel memristor doped ends of the 1 st memristor array block are connected with the point A, m forward parallel memristor doped ends of the nth memristor array block are connected with the point B, the other end of the point A is connected with the negative electrode of a power supply V2 and a measuring switch S1, the other end of the point B is grounded and connected with a switch S2, the positive electrode of the power supply V2 is connected with a resistor R3, the positive electrode of the power supply V2 is connected with a resistor R3, and the other end of the resistor R3 is connected with the other end of the switch S2.
5. The memristor-array-based ultraviolet light radiation accumulation measurement circuit, as claimed in claim 1, wherein the memristor error conditioning module comprises operational amplifier a2, resistor R4, resistor R5, resistor R6, resistor R7, power supply V3, power supply V4, single-pole double-throw switch S3, memristor Mz1, memristor Mz2, resistor R8, and operational amplifier a2 positive power supply VSS1 and negative power supply VSS 2; wherein:
the reverse end of the operational amplifier A2 is connected with a resistor R5 and a resistor R6, the other end of the resistor R5 is connected with m reverse parallel memristor non-doped ends of an nth memristor array block and m forward parallel memristor non-doped ends of the nth memristor array block, and the other end of the resistor R6 is connected with the output end of the operational amplifier A2;
the same-direction end of the operational amplifier A2 is connected with a resistor R4 and a resistor R7, the other end of the resistor R7 is grounded, the other end of the resistor R4 is connected with a non-doped end of a memristor Mz1 and a resistor R8, a doped end of the memristor Mz1 is connected with a doped end of the memristor Mz2, a non-doped end of the memristor Mz2 is connected with a switch S3, the other end of the resistor R8 is connected with a positive electrode of a power supply V3 and a negative electrode of a power supply V4, and a negative electrode of the power supply V3 and a positive electrode of the power supply V4 are connected with the other end of the switch S39.
6. The memristor array-based ultraviolet light radiation accumulation measurement circuit according to any one of claims 1 to 5, wherein the memristor is a Hewlett packard memristor.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1138133A (en) * | 1979-12-04 | 1982-12-21 | Westinghouse Electric Corporation | Radiation dosimeter assembly |
| US20140077090A1 (en) * | 2012-09-20 | 2014-03-20 | Rhombus Holdings Llc | Tunable detection instrument for subatomic particles |
| CN106784054A (en) * | 2017-03-06 | 2017-05-31 | 北京世纪金光半导体有限公司 | A kind of ultraviolet avalanche photodiode detector and its detection method |
| WO2017115340A1 (en) * | 2015-12-31 | 2017-07-06 | Khalifa University of Science, Technology & Research | Memristor based sensor for radiation detection |
| CN107101718A (en) * | 2017-05-19 | 2017-08-29 | 长安大学 | A kind of exposure quantity sensor based on differential concatenation memristor |
| CN109343097A (en) * | 2018-09-11 | 2019-02-15 | 长安大学 | A kind of nuclear radiation integrated dose measurement system based on memristor |
-
2019
- 2019-10-25 CN CN201911022687.8A patent/CN111221023B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1138133A (en) * | 1979-12-04 | 1982-12-21 | Westinghouse Electric Corporation | Radiation dosimeter assembly |
| US20140077090A1 (en) * | 2012-09-20 | 2014-03-20 | Rhombus Holdings Llc | Tunable detection instrument for subatomic particles |
| WO2017115340A1 (en) * | 2015-12-31 | 2017-07-06 | Khalifa University of Science, Technology & Research | Memristor based sensor for radiation detection |
| CN106784054A (en) * | 2017-03-06 | 2017-05-31 | 北京世纪金光半导体有限公司 | A kind of ultraviolet avalanche photodiode detector and its detection method |
| CN107101718A (en) * | 2017-05-19 | 2017-08-29 | 长安大学 | A kind of exposure quantity sensor based on differential concatenation memristor |
| CN109343097A (en) * | 2018-09-11 | 2019-02-15 | 长安大学 | A kind of nuclear radiation integrated dose measurement system based on memristor |
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