CN111218715B - Method for improving growth of strained silicon under different layout characteristics - Google Patents

Method for improving growth of strained silicon under different layout characteristics Download PDF

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CN111218715B
CN111218715B CN201911192674.5A CN201911192674A CN111218715B CN 111218715 B CN111218715 B CN 111218715B CN 201911192674 A CN201911192674 A CN 201911192674A CN 111218715 B CN111218715 B CN 111218715B
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silicon
hole
under different
monocrystalline silicon
growth
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CN111218715A (en
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杨明仑
萧至廷
薛培堃
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

The invention discloses an improvement method for growing strained silicon under different layout characteristics. The invention can effectively improve the LOD effect.

Description

Method for improving growth of strained silicon under different layout characteristics
Technical Field
The invention relates to the field of semiconductor integrated circuits, in particular to an improvement method for growing strained silicon under different layout characteristics.
Background
The strained silicon engineering utilizes an epitaxial technology to grow SiGe (germanium silicon), generates compressive stress on a P-type channel, grows SiC (silicon carbide) or SiP (silicon phosphide), and generates tensile stress on an N-type channel, and the strained silicon engineering can effectively improve carrier mobility so as to improve device performance. However, in a complicated layout environment, in a feature layout of a small SA (small-sized active region between a gate and an STI) region, due to the limitation of a silicon substrate, the growth of strained silicon is limited on a side close to the STI (shallow trench isolation), and epitaxy is not easy to grow, so that the amount of stress is insufficient, and the performance of a device cannot be effectively improved.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an improvement method for growing strained silicon under different Layout characteristics, which can effectively improve the LOD (Layout of Dependence volume uniformity) effect.
In order to solve the technical problem, the improvement method for the growth of the strained silicon under different layout characteristics is realized by adopting the following technical scheme:
after the diamond-shaped hole of the silicon substrate is etched, a layer of monocrystalline silicon film is formed on the inner surface of the hole.
The method of the present invention is suitable for the process of the engineering containing the strained silicon, aiming at the advanced process of 40 nm and below.
According to the method, the content of the silicon substrate epitaxially grown in the next process is increased by introducing the monocrystalline silicon film epitaxial deposition, the strained silicon with uniform volume can be obtained in different layout environments, the volume of the strained silicon is increased, and the LOD effect of the strained silicon grown in different layout environments can be effectively improved.
Drawings
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic illustration of the formation of diamond-type holes in a silicon substrate;
FIG. 2 is a schematic view of the formation of a single crystal silicon thin film on the inner surface of a diamond-type hole;
fig. 3 is a schematic diagram of forming silicon germanium in a diamond-type hole.
Detailed Description
The improvement method for the strained silicon growth under different layout characteristics is realized by adopting the following technical scheme in the following embodiment:
step one, as shown in fig. 1, a hole is formed in the silicon substrate 1 at the side end of the STI by etching, and the hole is diamond-shaped.
And step two, referring to fig. 2, forming a layer of monocrystalline silicon thin film 8 on the inner surface of the hole through selective epitaxial growth, and controlling the monocrystalline silicon to be capable of growing along with the shape of the hole by using a hydrochloric acid etch-back method. When the monocrystalline silicon film is grown by selective epitaxial growth, the precursor is SiH2Cl2(DCS dichlorosilane), the temperature is 700-800 ℃, and the pressure is<10Torr, and a thickness of
Figure BDA0002293961220000021
The hydrochloric acid etch-back method adopts the pressure of 20-30 mTorr and the temperature of 700-800 ℃.
Step three, referring to fig. 2, growing silicon germanium 9 in the hole, and filling the hole. The rate of germanium-silicon growth is: si (silicon) > SiN (silicon nitride) > oxydie (oxide).
According to the invention, a monocrystalline silicon film epitaxial deposition process is added after the diamond-shaped holes of the silicon substrate 1 are etched, so that the content of the silicon substrate epitaxially grown in the next process is increased. Subsequent strained silicon continues to grow along the monocrystalline silicon film, so that the volume is increased, the stress is improved, and the performance of the device is improved.
The process of epitaxial deposition of monocrystalline silicon thin films is introduced into strained silicon engineering to improve the volume loss of strained silicon due to environmental limitations under intrinsic feature layouts.
In FIGS. 1-3: 3 is gate polysilicon, 4 is a silicon nitride hard mask, 5 is an oxide hard mask, 6 is a first sidewall, and 7 is a silicon nitride sidewall.
The present invention has been described in detail with reference to the specific embodiments, but these are not to be construed as limiting the invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.

Claims (6)

1. An improvement method for growing strained silicon under different layout characteristics is characterized in that: forming a layer of monocrystalline silicon film on the inner surface of the diamond-shaped hole of the silicon substrate after the diamond-shaped hole is etched;
growing silicon germanium in the hole of the monocrystalline silicon film and filling the hole.
2. The method of claim 1, wherein: the diamond-type hole silicon is positioned at the STI side end in the substrate.
3. The method of claim 1 or 2, wherein: the monocrystalline silicon film is formed by selective epitaxial growth, and the growth of the monocrystalline silicon film in accordance with the appearance of the holes is controlled by a hydrochloric acid etch-back method.
4. The method of claim 3, wherein: when the monocrystalline silicon thin film is selectively epitaxially grown, the precursor is SiH2Cl2, the temperature is 700-800 ℃, the pressure is less than 10Torr, and the thickness is 10-20A.
5. The method of claim 3, wherein: the hydrochloric acid etch-back method adopts the pressure of 20-30 mTorr and the temperature of 700-800 ℃.
6. The method of claim 4, wherein: the rate of germanium-silicon growth is: si > SiN ≫ oxide.
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Citations (7)

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Publication number Priority date Publication date Assignee Title
CN1941297A (en) * 2005-09-28 2007-04-04 联华电子股份有限公司 Production of strain silicon transistor
CN101901780A (en) * 2010-06-25 2010-12-01 上海新傲科技股份有限公司 Preparation methods of SiGe on insulators and strained silicon materials on insulators
CN102412252A (en) * 2011-04-20 2012-04-11 上海华力微电子有限公司 Strained silicon CMOS (complementary metal oxide semiconductor) structure based on localized hybrid crystal orientation and preparation method thereof
CN102790005A (en) * 2011-05-16 2012-11-21 中国科学院上海微系统与信息技术研究所 Method for selectively etching and preparing full-isolation mixed crystal orientation SOI (silicon-on-insulator)
CN103021927A (en) * 2012-12-26 2013-04-03 中国科学院上海微系统与信息技术研究所 Hybrid coplanar SOI (silicon-on-insulator) substrate structure and preparation method thereof
CN103928319A (en) * 2014-04-08 2014-07-16 上海华力微电子有限公司 Germanium-silicon epitaxy growing method
CN104241141A (en) * 2014-09-28 2014-12-24 上海集成电路研发中心有限公司 Method for manufacturing embedded silicon-germanium strained PMOS (P-channel metal oxide semiconductor) device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10153353B1 (en) * 2017-06-05 2018-12-11 United Microelectronics Corp. Semiconductor structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1941297A (en) * 2005-09-28 2007-04-04 联华电子股份有限公司 Production of strain silicon transistor
CN101901780A (en) * 2010-06-25 2010-12-01 上海新傲科技股份有限公司 Preparation methods of SiGe on insulators and strained silicon materials on insulators
CN102412252A (en) * 2011-04-20 2012-04-11 上海华力微电子有限公司 Strained silicon CMOS (complementary metal oxide semiconductor) structure based on localized hybrid crystal orientation and preparation method thereof
CN102790005A (en) * 2011-05-16 2012-11-21 中国科学院上海微系统与信息技术研究所 Method for selectively etching and preparing full-isolation mixed crystal orientation SOI (silicon-on-insulator)
CN103021927A (en) * 2012-12-26 2013-04-03 中国科学院上海微系统与信息技术研究所 Hybrid coplanar SOI (silicon-on-insulator) substrate structure and preparation method thereof
CN103928319A (en) * 2014-04-08 2014-07-16 上海华力微电子有限公司 Germanium-silicon epitaxy growing method
CN104241141A (en) * 2014-09-28 2014-12-24 上海集成电路研发中心有限公司 Method for manufacturing embedded silicon-germanium strained PMOS (P-channel metal oxide semiconductor) device

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