CN111206239A - Plate type PECVD system integrated with PID resistant device and passivation coating method - Google Patents

Plate type PECVD system integrated with PID resistant device and passivation coating method Download PDF

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Publication number
CN111206239A
CN111206239A CN202010033705.9A CN202010033705A CN111206239A CN 111206239 A CN111206239 A CN 111206239A CN 202010033705 A CN202010033705 A CN 202010033705A CN 111206239 A CN111206239 A CN 111206239A
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bin
passivation
pid
film
pecvd
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于义超
陈斌
张俊兵
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JA Solar Technology Yangzhou Co Ltd
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JA Solar Technology Yangzhou Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a plate type PECVD system integrated with a PID (proportion integration differentiation) -resistant device and a passivation coating method, belongs to the technical field of solar cell manufacturing, and solves the problems that the passivation coating time is long, the temperature difference between a passivation bin and a PECVD process bin is large, and fragments are easy to appear in the conventional processAnd (5) problems are solved. The invention discloses a plate type PECVD system integrated with a PID resistant device, which comprises a feeding bin, the PID resistant device, a PECVD process bin and a discharging bin; the PID resistant device comprises a gas cylinder, an induction device and a passivation bin; the inducing device can induce O at normal temperature2Production of O3. The passivation coating method comprises the steps of preheating materials for the first time, and enabling the materials to enter a passivation bin; introducing oxygen, opening the inducing device, and forming a passivation film on the surface of the material; preheating the materials for the second time in the heating zone; the material passes through a film forming process zone and a cooling zone. The invention realizes the formation of SiO at normal temperature2And (5) passivating the film.

Description

Plate type PECVD system integrated with PID resistant device and passivation coating method
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a plate type PECVD system integrated with a PID resistant device and a passivation coating method.
Background
At present, the anti-PID technology of the battery end mainly focuses on the silicon dioxide/silicon nitride lamination technology, and the anti-PID performance of the composite film is well accepted by the industry. The silicon dioxide layer is the focus on the preparation of the silicon dioxide/silicon nitride stack, which directly affects the anti-PID properties of the assembly, the cell appearance and the conversion efficiency.
There are three methods for the preparation of the silicon dioxide layer: one is to use PECVD technology to N2O/SiH4A silicon dioxide layer is formed by ionization deposition, but the silicon dioxide layer of the technology has poor compactness, seriously damages a graphite boat and a furnace tube and also reduces the conversion efficiency of the battery; secondly, an ozone oxidation device is added in the PSG removing equipment to oxidize the surface of the silicon wafer to form a silicon dioxide layer, and the technology is low in cost and simple in process; thirdly, the thermal oxidation method is used for depositing silicon dioxide, the effect of depositing a silicon dioxide film by the thermal oxidation method is good, but the silicon dioxide film generally needs to be deposited for 30-60 min at high temperature (600-1100 ℃), so that the long-time high-temperature treatment causes the problems of the reduction of the service life of minority carriers, the redistribution of phosphorus, the diffusion of metal impurities and the like, and the conversion efficiency of the solar cell is influenced. Meanwhile, the current market requires that the battery piece has the performance of resisting PID, the common method is that after etching, an oxide layer is deposited by an independent PID resisting machine, the independent PID resisting equipment can not only improve the manufacturing cost of the battery, but also reduce the production efficiency of the battery piece, and the independent PID resisting equipment completes a passivation chamber (SiO)2) After deposition, the film is difficult to avoid contacting with air again, and the film is easy to adsorb moisture in the air and reduce the quality of the film.
Disclosure of Invention
In view of the above analysisThe invention aims to provide a plate type PECVD system integrated with a PID resistant device and a passivation coating method, which can at least solve one of the following technical problems: (1) prior art deposition of SiO2The passivation film is required to be carried out at the high temperature of 600-1100 ℃, the energy consumption is high, and the passivation film coating time is long; (2) the temperature difference between the passivation bin and the PECVD process bin is large, and the silicon wafer enters the PECVD process bin from the passivation bin and is easy to generate fragments due to internal thermal stress; (3) the independent anti-PID equipment needs to be purchased independently, so that the manufacturing cost of the battery is improved, and the production efficiency of the battery piece is low; (4) independent PID resistant equipment completion passivation chamber (SiO)2) After deposition, the film contacts with air again, so that the moisture in the air is easily adsorbed, and the quality of the film is reduced.
The purpose of the invention is mainly realized by the following technical scheme:
on one hand, the invention provides a plate type PECVD system integrated with a PID resistant device, which comprises a feeding bin, the PID resistant device for depositing a passivation film, a PECVD process bin and a discharging bin along the material transmission direction; the anti-PID device comprises a device for providing O2Or cylinders of compressed air, for inducing O2Production of O3The induction device and the passivation bin; the induction device is arranged in the passivation bin and can induce O at normal temperature2Production of O3(ii) a The gas cylinder is connected with the passivation bin through a pipeline, and conveying devices are arranged in the feeding bin, the passivation bin, the PECVD process bin and the discharging bin.
On the basis of the scheme, the invention is further improved as follows:
in one possible design, the inducing arrangement comprises an ultraviolet lamp.
In one possible design, a heating device is arranged in the feeding bin and used for preheating the materials.
In one possible design, a pressure sensor is also arranged in the passivation chamber.
In one possible design, a position sensor is arranged in front of each bin door of the feeding bin, the passivation film bin, the PECVD process bin and the discharging bin, and the opening and the closing of each bin door are automatically realized through the position sensors.
In one possible design, the anti-PID device further comprises a flow controller and a control valve, which are provided on the pipeline between the gas cylinder and the passivation chamber.
In one possible design, the PECVD process chamber includes a heating zone, a film formation process zone, and a cooling zone.
On the other hand, the invention also provides a passivation coating method, and the plate-type PECVD system adopting the integrated PID resistant device comprises the following steps:
step 1: the materials enter a feeding bin to be preheated for the first time;
step 2: the preheated material enters a passivation bin;
and step 3: introducing oxygen into the passivation bin, opening the induction device, and forming a passivation film on the surface of the material;
and 4, step 4: the material with the surface formed with the passive film enters a PECVD process bin, and the material is preheated for the second time in a heating zone;
and 5: the materials preheated for the second time sequentially pass through a film forming process area and a cooling area.
Further, in the step 1, the temperature for primary preheating is 300-450 ℃; in the step 4, the temperature of the second preheating is 300-450 ℃.
Further, step 5 is followed by step 6: and introducing gas into the discharging bin, opening a bin door, and enabling the silicon wafer to enter the next procedure.
The invention can realize at least one of the following beneficial effects:
(1) by providing a passivation chamber for inducing O2Production of O3The induction device does not need to be heated to the high temperature of 600-1100 ℃, and can deposit the silicon dioxide film at normal temperature, thereby not only reducing the energy consumption, but also shortening the passivation coating time.
(2) Because the silicon nitride film process needs to be carried out at the temperature of 300-450 ℃, and the passivation coating is carried out at the normal temperature, the heating device is arranged in the feeding bin, and the temperature of the silicon wafer in the feeding bin is raised to 300-450 ℃, namely equal to or close to the temperature required by the silicon nitride film deposition process, so that the temperature difference between the passivation bin and the PECVD process bin is not or is less than 150 ℃ (far lower than 200-800 ℃ in the prior art), the temperature difference is not or is less when the silicon wafer is transmitted between two regions, the thermal shock of the silicon wafer caused by overlarge temperature difference is avoided, and the risk of bending the silicon wafer is reduced.
(3) The PID resisting device and the PECVD equipment are integrated in the same system, materials directly enter the PECVD process bin from the passivation bin without contacting air, moisture in the air cannot be adsorbed, and the quality of a film cannot be reduced.
In the invention, the technical schemes can be combined with each other to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, wherein like reference numerals are used to designate like parts throughout.
FIG. 1 is a schematic structural diagram of a plate-type PECVD system integrated with a PID resistant device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a passivation chamber structure of a plate PECVD system integrated with a PID resistant device according to an embodiment of the present invention;
FIG. 3 is a schematic view of a PECVD process chamber of a plate-type PECVD system integrated with a PID resistant device according to an embodiment of the invention.
Reference numerals:
1-a feeding bin; 2-anti-PID device; 201-gas cylinder; 202-a flow controller; 203-a control valve; 204-ultraviolet lamp; 205-a pressure sensor; 206-a passivation bin; 3-PECVD process bin; 301-heating zone; 302-film forming process area; 303-cooling area; 4-discharging the materials; 5-a transmission device; 6-bin gate.
Detailed Description
The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form a part hereof, and which together with the embodiments of the invention serve to explain the principles of the invention and not to limit its scope.
Example one
In one embodiment of the present invention, a plate-type PECVD system integrated with a PID resisting device is disclosed, as shown in fig. 1-3, comprising a feeding bin 1, a PID resisting device 2 for depositing a passivation film, a PECVD process bin 3 and a discharging bin 4 along a material conveying direction.
The anti-PID device comprises a device for providing O2Cylinder 201 for inducing O2Production of O3The induction device and the passivation chamber 206. The inducing device is arranged in the passivation bin and can induce O at normal temperature2Production of O3。
The gas cylinder 201 is connected with the passivation bin 206 through a pipeline, and the feeding bin 1, the passivation bin 206, the PECVD process bin 3 and the discharging bin 4 are all internally provided with a transmission device 5.
In the implementation, the material firstly enters the feeding bin 1 and then enters the passivation bin 206 of the PID resistant device, and O in the gas cylinder2O generation induced by the inducing device3Thereby forming a passive film on the surface of the material. Then enters a PECVD process bin to prepare a silicon nitride film, and then enters a discharging bin 4.
Compared with the prior art, the plate-type PECVD system integrated with the PID resisting device provided by the embodiment is used for inducing O in the passivation bin2Production of O3The induction device does not need to be heated to the high temperature of 600-1100 ℃, can realize passivation coating at normal temperature, saves the time required for heating the silicon wafer from the normal temperature to the high temperature of 600-1100 ℃, reduces energy consumption and shortens passivation coating time.
For example, the inducing device used in the present embodiment may be an ultraviolet lamp 204, or may be other inducing device capable of inducing O at normal temperature2Production of O3The apparatus of (1).
It should be noted that the gas in the gas cylinder 201 of this embodiment may be pure O2It may also be clean, compressed air (CDA) as long as O can be supplied to the passivation zone2And impurities which affect the quality of the coating film can not be introduced.
Considering that O is induced by the arrangement of the passivation bin2Production of O3The induction device can realize passivation coating at normal temperature, namely the temperature in a passivation bin is normal temperature, the temperature in a PECVD process bin is 300-450 ℃, and the silicon wafer rapidly enters the environment of 300-450 ℃ from normal temperature, so that thermal stress and fragments are easy to appear in the silicon wafer due to large temperature difference.
Based on the above consideration, in the embodiment, the heating device is arranged in the feeding bin to preheat the silicon wafer, so that the temperature of the silicon wafer reaches or approaches to the coating temperature of the process chamber, and the requirement of the process chamber is met; on the other hand, the temperature difference between the passivation bin and the PECVD process bin is small, and the silicon wafer is not subjected to large temperature difference during transmission between the two regions, so that thermal shock of the silicon wafer due to the temperature difference is avoided, and the risks of bending and fragmenting the silicon wafer are reduced.
Illustratively, the heating device employed in the present embodiment is an infrared heater. This is because the infrared heater heats rapidly, and can raise the temperature of the silicon wafer in a short time. In addition, the heating device in the feeding bin can be other heating devices as long as the temperature of the silicon wafers can be increased in a short time.
The problem that if the gas in the gas cylinder enters the passivation bin too much, the pressure in the passivation bin is too high and exceeds the bearing limit of equipment, and potential safety hazards are brought to production is solved. If the gas in the gas cylinder gets into the passivation storehouse too little, be unfavorable for passivation coating film, reduction in production efficiency, consequently, this embodiment is equipped with pressure sensor 205 in the passivation storehouse for the pressure in the real-time demonstration passivation storehouse 206. The gas flow in the gas cylinder is adjusted in real time according to the pressure in the passivation chamber 206.
And a flow controller 202 and a control valve 203 are arranged on a pipeline between the gas cylinder 201 and the passivation bin 206. When the pressure in the passivation bin is overlarge, reducing gas entering the passivation bin through a flow controller; when the pressure in the passivation chamber is too low, the gas entering the passivation chamber is increased by a flow controller. Through the design, the production safety can be ensured, the efficiency of passivation coating can not be too low, and the higher production efficiency can be ensured.
It should be noted that the PECVD process chamber of the present embodiment is divided into a heating zone 301, a film formation process zone 302, and a cooling zone 303. After the silicon wafer is preheated in the heating area 301 until the process requirement of film formation is met, the silicon wafer enters the film formation process area to deposit a silicon nitride film, so that the deposited silicon nitride film is uniform and stable.
It should be noted that the heating device used in the heating zone is a resistance wire heater, rather than an infrared heater as in the feed bin. This is because the infrared heater heats unevenly although the heating speed is high. The resistance wire heater is not as fast as the infrared heater but is uniform in heating, so that the integral temperature difference of the silicon wafer is small, the deposited silicon nitride film is uniform and stable, and the integral performance of the silicon nitride film is improved.
In order to know the preheating temperature in time, temperature sensors are arranged in the heating zones of the feeding bin and the PECVD process bin.
It should be noted that, as the opening and closing of each bin door 6 is manually controlled, on one hand, outside air enters each bin, which destroys the vacuum environment and affects the film coating; on the other hand, the film is again in contact with air, and moisture in the air is easily adsorbed, thereby degrading the film quality. Therefore, in the embodiment, the position sensor is arranged in front of each bin door, and the opening and closing of each bin door are automatically realized through the position sensor.
Specifically, as long as the graphite frame carrying the silicon wafer reaches the position of the position sensor, the position sensor senses the measured information and sends a signal to the bin gate, and the bin gate is automatically opened; and the position sensor cannot sense the measured information until the graphite frame completely passes over the position sensor, and the bin gate is automatically closed.
In order to improve the sealing performance between the whole system and the external environment and between each chamber in the system, the embodiment has performed a sealing design on each bin gate, for example, a bin gate sealing ring is arranged on each bin gate.
It should be noted that a small amount of air may enter the feeding bin at the moment when the bin door is opened, but after the bin door is closed, the feeding bin in an atmospheric state is vacuumized by the pump below the feeding bin to meet the process requirement, and the small amount of air brought in is also pumped away by the pump, so that the states of the second cavity (anti-PID device) and the third cavity (PECVD process bin) are not affected.
Example two
The invention further discloses a passivation coating method, which adopts the plate-type PECVD system integrated with the PID resisting device of the first embodiment, and comprises the following steps:
step 1: the method comprises the following steps of (1) preheating a silicon wafer to 300-450 ℃ in a feeding bin for the first time;
step 2: the preheated material enters a passivation bin;
and step 3: introducing oxygen into the passivation bin, turning on the ultraviolet lamp, and forming SiO on the surface of the silicon wafer2A passivation film;
and 4, step 4: surface formation of SiO2The method comprises the following steps that a silicon wafer of a passivation film enters a PECVD process bin, and materials are preheated for the second time in a heating area to 300-450 ℃;
and 5: and the silicon wafer which is preheated for the second time sequentially passes through the film forming process area and the cooling area.
Step 6: and the silicon wafer enters a discharge bin, gas is filled into the discharge bin, a bin door at the tail end of the discharge bin is opened, and the silicon wafer is transferred to enter the next procedure.
In step 6 of the passivation coating method, the purpose of filling gas into the discharge bin 4 is to make the air pressure in the discharge bin consistent with the external atmospheric pressure of the equipment, so that the bin door 6 can be conveniently opened. Therefore, air, nitrogen, argon, or the like may be charged as long as the pressure in the discharging hopper 4 can be increased. But considering that if the air is filled, other impurities can be introduced to influence the quality of the coating film; and if filling argon, then increase manufacturing cost, consequently, this embodiment chooses to fill into nitrogen gas to ejection of compact storehouse 4, increases the pressure in ejection of compact storehouse 4, makes the atmospheric pressure in the ejection of compact storehouse unanimous with the outside atmospheric pressure of equipment to be convenient for open the door.
It should be noted that, the present embodiment adopts a plate-type PECVD process, and the principle of depositing the silicon nitride film is as follows: under low-pressure vacuum, ammonia gas is ionized through microwave, silane is bombarded, chemical reaction is carried out, and silicon nitride is generated and deposited on the surface of the silicon.
Specifically, the main parameters in the process of depositing the silicon nitride film are as follows: the gas flow of the single-tube ammonia gas is 0-1000 sccm, the gas flow of the single-tube silane is 0-300 sccm, the gas pressure in the process chamber is 0.1-0.4 mPa, and the microwave power is 2000-5000W.
EXAMPLE III
The embodiment discloses an improved passivation coating method, which specifically comprises the following steps:
step 1: after the silicon wafer is subjected to the wet etching process, the foremost bin gate 6 of the feeding bin 1 is opened, the silicon wafer is placed on the graphite frame, the graphite frame enters the feeding bin 1 through the conveying device 5, and the foremost bin gate 6 of the feeding bin 1 is closed;
step 2: vacuumizing the feeding bin, and simultaneously preheating the silicon wafer by an infrared heater in the feeding bin in a first step, wherein the temperature of the silicon wafer is controlled to be 300-450 ℃;
and step 3: after preheating, the bin gate 6 between the feeding bin 1 and the passivation bin 206 is opened, the silicon wafer enters the passivation bin 206 in the PID device 2 through the transmission device 5, and after the silicon wafer enters, the bin gate 6 between the feeding bin 1 and the passivation bin 206 is closed;
and 4, step 4: introduction of CDA or pure O2O in CDA2Or pure O2O generation under UV lamp 204 illumination3，O3Contacting with the surface of the silicon wafer to form a layer of SiO2A passivation film;
and 5: after the passivation process is finished, the bin gate 6 between the passivation bin 206 and the PECVD process bin 3 is opened, and after the silicon wafer enters the heating zone 301 of the PECVD process bin 3 through the transmission device 5, the bin gate 6 between the passivation bin 206 and the PECVD process bin 3 is closed;
step 6: a resistance wire heater in the heating zone 301 is used for carrying out secondary preheating on the silicon wafer, wherein the preheating temperature is 300-450 ℃;
and 7: after preheating is finished, the silicon wafer enters a film forming process area 302 through a transmission device 5 to prepare a PECVD silicon nitride film, the deposition temperature is 300-450 ℃, and after deposition is finished, the silicon wafer enters a cooling area 303 through the transmission device 5;
and 8: after the silicon wafers are cooled, a bin gate 6 between the PECVD process bin 3 and the discharge bin 4 is opened, the silicon wafers enter the discharge bin 4 through a transmission device 5, and the bin gate 6 between the PECVD process bin 3 and the discharge bin 4 is closed;
and step 9: nitrogen is injected into the discharging bin, so that the air pressure in the bin is consistent with the external atmospheric pressure of the equipment, at the moment, the bin door 6 at the tail end of the discharging bin 4 is opened, and the silicon wafer is transferred to enter the next procedure.
According to the embodiment, the silicon dioxide film is deposited at normal temperature, the silicon dioxide film does not need to be heated to the high temperature of 600-1100 ℃, the time required for heating the silicon wafer from the normal temperature to the high temperature of 600-1100 ℃ is saved, the energy consumption is reduced, and the passivation coating time is shortened. And the silicon wafer is heated in the feeding bin to be equal to or close to the temperature required by the silicon nitride film deposition process, so that the passivation bin and the PECVD process bin have no or small temperature difference, the silicon wafer is transmitted between the two regions without or with small temperature difference, the thermal shock of the silicon wafer caused by the temperature difference is avoided, and the risk of bending the silicon wafer is reduced.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (10)

1. A plate type PECVD system integrated with a PID resistant device is characterized by comprising a feeding bin, the PID resistant device for depositing a passivation film, a PECVD process bin and a discharging bin along the material transmission direction;
the anti-PID device comprises a device for providing O2Or cylinders of compressed air, for inducing O2Production of O3The induction device and the passivation bin; the induction device is arranged in the passivation bin and can induce O at normal temperature2Production of O3；
The gas cylinder is connected with the passivation bin through a pipeline, and conveying devices are arranged in the feeding bin, the passivation bin, the PECVD process bin and the discharging bin.
2. The integrated PID device-resistant plate PECVD system of claim 1, wherein the inducing device comprises an ultraviolet lamp.
3. The integrated PID resistant apparatus plate PECVD system of claim 1, wherein the feed bin is provided with a heating apparatus for preheating the material.
4. The integrated PID device-resistant plate-type PECVD system of claim 1, wherein a pressure sensor is provided in the passivation chamber.
5. The integrated PID resistant device plate-type PECVD system of claim 1, wherein a position sensor is arranged in front of each bin gate of the feeding bin, the passivation film bin, the PECVD process bin and the discharging bin, and the opening and closing of each bin gate are automatically realized through the position sensors.
6. The integrated PID resistant device plate PECVD system of any of claims 1-5, wherein the PID resistant device further comprises a flow controller and a control valve, the flow controller and the control valve are disposed on a pipeline between the gas cylinder and the passivation chamber.
7. The integrated PID device-resistant plate-type PECVD system of claim 1, wherein the PECVD process chamber comprises a heating zone, a film formation process zone, and a cooling zone.
8. A passivation coating method, characterized in that the plate-type PECVD system with integrated anti-PID device according to claims 1-7 is used, comprising the following steps:
step 1: the materials enter a feeding bin to be preheated for the first time;
step 2: the preheated material enters a passivation bin;
and step 3: introducing oxygen into the passivation bin, opening the induction device, and forming a passivation film on the surface of the material;
and 4, step 4: the material with the surface formed with the passive film enters a PECVD process bin, and the material is preheated for the second time in a heating zone;
and 5: the materials preheated for the second time sequentially pass through a film forming process area and a cooling area.
9. The passivation coating method according to claim 7, characterized in that in the step 1, the temperature of the first preheating is 300-450 ℃; in the step 4, the temperature of the second preheating is 300-450 ℃.
10. The passivation coating method according to claim 7, further comprising step 6 after step 5: and introducing gas into the discharging bin, opening a bin door, and enabling the silicon wafer to enter the next procedure.
CN202010033705.9A 2020-01-13 2020-01-13 Plate type PECVD system integrated with PID resistant device and passivation coating method Pending CN111206239A (en)

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CN103489961A (en) * 2013-09-22 2014-01-01 英利能源（中国）有限公司 Preparation method of antireflection film, antireflection film and solar cell
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Application publication date: 20200529