CN111201626B - Photoelectric conversion element and method for manufacturing same - Google Patents
Photoelectric conversion element and method for manufacturing same Download PDFInfo
- Publication number
- CN111201626B CN111201626B CN201880056121.4A CN201880056121A CN111201626B CN 111201626 B CN111201626 B CN 111201626B CN 201880056121 A CN201880056121 A CN 201880056121A CN 111201626 B CN111201626 B CN 111201626B
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- China
- Prior art keywords
- photoelectric conversion
- conversion layer
- ion
- transparent electrode
- counter electrode
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 196
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- 239000000758 substrate Substances 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 21
- -1 formamidine ion Chemical class 0.000 claims description 15
- 150000004820 halides Chemical class 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 11
- 150000001768 cations Chemical class 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
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- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 claims description 3
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
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- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- DMTNYYLGEBSTEJ-UHFFFAOYSA-N triphenylene-1,2-diamine Chemical compound C1=CC=C2C3=C(N)C(N)=CC=C3C3=CC=CC=C3C2=C1 DMTNYYLGEBSTEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/811—Controlling the atmosphere during processing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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Abstract
The invention provides a photoelectric conversion element with improved electrical separation between adjacent parts of two adjacent photoelectric conversion layers. A photoelectric conversion element (1) of an embodiment is provided with: a 1 st photoelectric conversion section (3A) provided on the transparent substrate (2) and having a 1 st transparent electrode (4A), a 1 st photoelectric conversion layer (5A), and a 1 st counter electrode (6A); and a 2 nd photoelectric conversion unit (3A) provided with a 2 nd transparent electrode (4B), a 2 nd photoelectric conversion layer (5B), and a 2 nd counter electrode (6B). The 1 st counter electrode (6A) and the 2 nd transparent electrode (4B) are electrically connected by a connecting portion (7). In the 1 st photoelectric conversion layer (5A) and the 2 nd photoelectric conversion layer (5B), adjacent parts of the 1 st and 2 nd photoelectric conversion layers (5A, 5B) are electrically separated by an inactive region (10) having a higher resistance than the 1 st and 2 nd photoelectric conversion layers (5A, 5B).
Description
Technical Field
Embodiments of the present invention relate to a photoelectric conversion element and a method for manufacturing the same.
Background
Application of organic/inorganic hybrid semiconductors to photoelectric conversion elements such as solar cells, light-emitting elements, and photosensors is expected. As the organic/inorganic hybrid semiconductor, for example, perovskite compounds are known. By using an organic/inorganic hybrid semiconductor as a material for forming an active layer of a photoelectric conversion element such as a solar cell, an inexpensive coating method can be applied to the formation of a photoelectric conversion layer (active layer) or the like, and therefore the cost for forming the active layer or the like can be significantly reduced. From this point, the organic/inorganic hybrid solar cell is expected to be a next-generation solar cell with low cost.
The unit constituting the solar cell module has a structure in which an active layer is sandwiched between a transparent electrode and a counter electrode. As the transparent electrode, a conductive metal oxide such as Indium Tin Oxide (ITO), a conductive polymer material, a carbon material, or the like, which is insufficient in conductivity, a composite material in which an additive such as a metal nanowire is compounded with these materials, or the like is generally used, and therefore, the larger the cell area, the lower the efficiency of taking out generated charges to the outside. Thus, a plurality of elongated cells are formed in an array, and the plurality of cells are connected in series. The solar cell module having a plurality of cells is formed, for example, by the method shown below.
First, transparent electrodes of the respective cells are formed on a transparent substrate. The active layer is formed by coating the entire surface of the plurality of transparent electrodes. A portion of the active layer is scribed to form a groove exposing the transparent electrode. On the active layer having scribe lines, counter electrodes are formed corresponding to the respective cells. At this time, the counter electrode of the adjacent cell is electrically connected to the transparent electrode exposed in the scribe line by filling the scribe line with the counter electrode of the adjacent cell. The counter electrode is formed in a state of being electrically separated for each cell by, for example, vapor deposition using a mask, or is electrically separated for each cell by, for example, scribing after the counter electrode is uniformly formed.
The scribing of the active layer is performed to form a groove as a formation region of a connection portion electrically connecting the counter electrode and the transparent electrode of two adjacent cells, and to cut the active layer uniformly formed on the plurality of transparent electrodes in accordance with the plurality of cells. Scoring is performed, for example, by mechanical scoring using a cutting tool. When the active layer or the counter electrode is scribed, when a metal is used as the counter electrode and a conductive metal oxide is used as the transparent electrode, a laminate of materials having different hardness including soft and adhesive active layers disposed therebetween is scribed, and therefore, there is a problem as follows: if the pressure at the time of scribing is weak, the active layer is liable to remain in the groove or on the conductive metal oxide.
When the active layer remains in the groove or on the conductive metal oxide, there is a possibility that an electrical short circuit occurs between adjacent portions (adjacent portions) of the adjacent active layers, and characteristics such as photoelectric conversion efficiency may be lowered. On the other hand, if the pressure, output, and the like at the time of scribing are increased so that the active layer does not remain, cracks and the like are easily generated in the conductive oxide layer. In addition, in the case of using a conductive polymer material having the same softness as the active layer as the transparent electrode, it is difficult to selectively scribe and remove only the active layer while leaving the conductive polymer material. Therefore, a separation structure capable of improving electrical separation between adjacent portions (approaching portions) of active layers of adjacent cells is required.
Prior art literature
Patent literature
Patent document 1: japanese patent No. 5715795
Patent document 2: japanese patent No. 6030176
Disclosure of Invention
Problems to be solved by the invention
The present invention aims to provide a photoelectric conversion element and a method for manufacturing the same, which can improve characteristics such as photoelectric conversion efficiency by improving electrical separation between adjacent portions (adjacent portions) of two adjacent photoelectric conversion layers.
Means for solving the problems
The photoelectric conversion element of the embodiment is provided with: a transparent substrate; a 1 st photoelectric conversion unit including a 1 st transparent electrode provided on the transparent substrate, a 1 st photoelectric conversion layer which is disposed on the 1 st transparent electrode and includes a perovskite compound, and a 1 st counter electrode which is disposed on the 1 st photoelectric conversion layer; a 2 nd photoelectric conversion unit including a 2 nd transparent electrode provided on the transparent substrate adjacent to the 1 st transparent electrode and separated from the 1 st transparent electrode, a 2 nd photoelectric conversion layer including a perovskite compound and disposed on the 2 nd transparent electrode so as to be adjacent to the 1 st photoelectric conversion layer, and a 2 nd counter electrode disposed on the 2 nd photoelectric conversion layer; a connection unit electrically connecting the 1 st counter electrode and the 2 nd transparent electrode; and an inactive region provided between the 1 st photoelectric conversion layer and the 2 nd photoelectric conversion layer so as to electrically separate adjacent portions of the 1 st and 2 nd photoelectric conversion layers from each other, and having a higher electrical resistance than the 1 st and 2 nd photoelectric conversion layers.
Drawings
Fig. 1 is a cross-sectional view showing a schematic structure of a photoelectric conversion element according to an embodiment.
Fig. 2 is a sectional view showing a photoelectric conversion portion in the photoelectric conversion element shown in fig. 1 in an enlarged manner.
Fig. 3 is a sectional view showing an example of a part of the photoelectric conversion element shown in fig. 1 in an enlarged manner.
Fig. 4 is a sectional view showing, in an enlarged manner, another example of a part of the photoelectric conversion element shown in fig. 1.
Fig. 5A is a cross-sectional view showing an example of a process for manufacturing the photoelectric conversion element according to the embodiment.
Fig. 5B is a cross-sectional view showing an example of a process for manufacturing the photoelectric conversion element according to the embodiment.
Fig. 5C is a cross-sectional view showing an example of a process for manufacturing the photoelectric conversion element according to the embodiment.
Fig. 5D is a cross-sectional view showing an example of a process for manufacturing the photoelectric conversion element according to the embodiment.
Reference numerals
1 … photoelectric conversion element, 2 … transparent substrate, 3A, 3B, 3C … photoelectric conversion part, 4A, 4B, 4C … transparent electrode, 5A, 5B, 5C … photoelectric conversion layer, 51X … active layer, 52, 52X … 1 st interlayer, 53X … 2 nd interlayer, 6A, 6B, 6C … counter electrode, 7A, 7B … connection, 10A, 10B … inactive area, 11a … separation groove.
Detailed Description
Hereinafter, a photoelectric conversion element of an embodiment and a method for manufacturing the same will be described with reference to the drawings. In the respective embodiments, substantially the same constituent parts are denoted by the same reference numerals, and the description thereof may be partially omitted. The drawings are schematic, and the relationship between the thickness and the planar dimension, the ratio of the thickness of each portion, and the like may be different from reality. Unless otherwise noted, terms indicating the vertical direction and the like in the description indicate the relative direction when the surface of the transparent substrate to be formed is set up, and sometimes differ from the actual direction with reference to the gravitational acceleration direction.
Fig. 1 shows a schematic structure of a photoelectric conversion element according to an embodiment. The photoelectric conversion element 1 shown in fig. 1 includes a transparent substrate 2 functioning as a support substrate, and a plurality of photoelectric conversion units 3 (3A, 3B, 3C) provided on the transparent substrate 2. The photoelectric conversion unit 3 includes transparent electrodes 4 (4A, 4B, 4C), photoelectric conversion layers 5 (5A, 5B, 5C), and counter electrodes 6 (6A, 6B, 6C) formed in this order on the transparent substrate 2.
The transparent substrate 2 is made of a material having light transmittance and insulation properties. As a constituent material of the transparent substrate 2, inorganic materials such as alkali-free glass, quartz glass, and sapphire, and organic materials such as Polyethylene (PE), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, polyamide, polyamideimide, and liquid crystal polymer are used. The transparent substrate 2 may be, for example, a rigid substrate made of an inorganic material or an organic material, or may be a flexible substrate made of an organic material or an extremely thin inorganic material.
In the case where the photoelectric conversion element 1 of the embodiment is a solar cell, light is irradiated to the photoelectric conversion layer 5 through the transparent substrate 2 and the transparent electrode 4. In the case where the photoelectric conversion element 1 is a light-emitting element, light generated in the photoelectric conversion layer 5 is emitted through the transparent substrate 2 and the transparent electrode 4. When the counter electrode 6 is also made of a transparent material, light is irradiated or emitted through the counter electrode 6. Taking the case where the photoelectric conversion element 1 is a solar cell as an example, charge separation is generated by light irradiated to the photoelectric conversion layer 5, and electrons and holes paired therewith are generated. For example, electrons are trapped by the transparent electrode 4, and holes are trapped by the counter electrode 6 among electrons and holes generated in the photoelectric conversion layer 5. The functions of the transparent electrode 4 and the counter electrode 6 may be reversed. These portions will be described below.
The transparent electrode 4 is made of a material having light transmittance and conductivity. As a constituent material of the transparent electrode 4, a conductive metal oxide such as indium oxide, zinc oxide, tin oxide, indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), gallium-doped zinc oxide (GZO), aluminum-doped zinc oxide (AZO), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO), a conductive polymer such as poly (3, 4-ethylenedioxythiophene)/poly (4-styrenesulfonic acid) (PEDOT/PSS), or a carbon material such as graphene is used. The transparent electrode 4 may be formed of a composite material in which a nano conductive material such as silver nanowires, gold nanowires, or carbon nanotubes is added to the above-described material. The transparent electrode 4 may be a laminated film of a layer made of the above material and a metal layer made of a metal such as gold, platinum, silver, copper, cobalt, nickel, indium, aluminum, or an alloy containing these metals, in a range where light transmittance can be maintained. The method for forming the transparent electrode 4 is not particularly limited, and is formed by, for example, vacuum evaporation, sputtering, ion plating, CVD, sol-gel, plating, coating, or the like.
The thickness of the transparent electrode 4 is not particularly limited, but is preferably 10nm to 1 μm, more preferably 30nm to 300 nm. When the film thickness of the transparent electrode 4 is too small, the sheet resistance becomes high. When the film thickness of the transparent electrode layer 4 is too large, the light transmittance is reduced, and the flexibility is lowered, whereby cracks and the like are easily generated by stress. The film thickness of the transparent electrode 4 is preferably selected so as to obtain both high light transmittance and low sheet resistance. The sheet resistance of the transparent electrode layer 4 is not particularly limited, and is usually 1000Ω/∈s or less, preferably 500Ω/∈s or less, and more preferably 200Ω/∈s or less. In the case of a current-driven element such as a solar cell or a light-emitting element, 50Ω/≡is more preferable.
For example, as shown in fig. 2, the photoelectric conversion layer 5 has an active layer 51, a 1 st intermediate layer (1 st buffer layer) 52 disposed between the transparent electrode 4 and the active layer 51, and a 2 nd intermediate layer (2 nd buffer layer) 53 disposed between the active layer 51 and the counter electrode 6. The 2 nd intermediate layer 53 may further have a 1 st counter electrode side intermediate layer and a 2 nd counter electrode side intermediate layer. The 1 st and 2 nd intermediate layers 52, 53 are arranged as needed, and either or both of them may be omitted as the case may be. The layers 51, 52, 53 constituting the photoelectric conversion layer 5 are appropriately selected according to the device (solar cell, light emitting element, light sensor, etc.) to which the photoelectric conversion element 1 is applied. The following description will mainly explain the case where the photoelectric conversion element 1 is used as a solar cell, but the photoelectric conversion element 1 of the embodiment can be applied to a light emitting element, a light sensor, or the like.
The active layer 51 contains a perovskite compound. Examples of the perovskite compound used in the active layer 51 include perovskite compounds having a structure represented by ABX 3 A compound of the indicated components. The A position is monovalent cation, the B position is divalent cation, and the X is monovalent halogen anion. Examples of monovalent cations at the A-position include a monovalent cation selected from the group consisting of methyl ammonium ion (CH) 3 NH 4 + ) Formamidine ion (nh=chnh 2 + ) Potassium ion (K) + ) Rubidium ions (Rb) + ) And cesium ions (Cs) + ) At least one of them. Examples of the divalent cation at the B-position include those selected from the group consisting of lead ions (Pb 2+ ) Germanium ions (Ge) 2+ ) And tin ions (Sn) 2+ ) At least one of them. Examples of the monovalent halogen anion at the X-position include those selected from iodide (I) - ) Bromide ion (Br) - ) And chloride ions (Cl) - ) At least one of them. Examples of the method for forming the active layer 51 include a method of vacuum deposition of the perovskite compound or a precursor thereof, and a method of applying a solution obtained by dissolving the perovskite compound or a precursor thereof in a solvent, heating the solution, and drying the solution. Examples of the precursor of the perovskite compound include a mixture of methyl ammonium halide and lead halide or tin halide. The thickness of the active layer 51 is not particularly limited, and is preferably 10nm to 1000 nm. The active layer 51 may contain additives other than perovskite compounds, solvents, and the like.
In the case where electrons and electrons in holes generated in the photoelectric conversion layer 5 are trapped by the transparent electrode 4, the 1 st intermediate layer 52 is preferably composed of a material capable of selectively and efficiently transporting electrons. The constituent material of the 1 st intermediate layer 52 functioning as an electron transport layer includes, but is not particularly limited to, inorganic materials such as zinc oxide, titanium oxide, and gallium oxide, organic materials such as polyethyleneimine and derivatives thereof, and carbon materials such as fullerene derivatives. In the case of trapping holes with the transparent electrode 4, the 1 st intermediate layer 52 is preferably made of a material capable of selectively and efficiently transporting holes. The constituent material of the 1 st intermediate layer 52 functioning as a hole transport layer includes, but is not limited to, inorganic materials such as nickel oxide, copper oxide, vanadium oxide, tantalum oxide, and molybdenum oxide, and organic materials such as polythiophene, polypyrrole, polyacetylene, triphenylenediamine polypyrrole, polyaniline, and derivatives thereof. The thickness of the 1 st intermediate layer 52 is preferably 0.05nm to 200nm, more preferably 0.1nm to 50nm.
In the case where holes among electrons and holes generated in the photoelectric conversion layer 5 are trapped by the counter electrode 6, the 2 nd intermediate layer 53 is preferably made of a material capable of selectively and efficiently transporting holes. In the case of trapping electrons by the counter electrode 6, the 2 nd intermediate layer 53 is preferably made of a material capable of selectively and efficiently transporting electrons. The constituent materials of the 2 nd intermediate layer 53 functioning as a hole transport layer and the 2 nd intermediate layer 53 functioning as an electron transport layer are the same as those shown in the 1 st intermediate layer 52. The thickness of the 2 nd intermediate layer 53 is preferably 0.05nm to 200nm, more preferably 0.1nm to 50nm.
The counter electrode 6 has conductivity and is made of a material having light transmittance in some cases. As a constituent material of the counter electrode 6, for example, metals such as platinum, gold, silver, copper, nickel, cobalt, iron, manganese, tungsten, titanium, zirconium, tin, zinc, aluminum, indium, chromium, lithium, sodium, potassium, rubidium, cesium, calcium, magnesium, barium, samarium, terbium, alloys containing these metals, conductive metal oxides such as indium-zinc oxide (IZO), carbon materials such as graphene, and carbon nanotubes, and the like can be used. The counter electrode 6 may be formed of a composite material in which a nano conductive material such as silver nanowires, gold nanowires, or carbon nanotubes is added to the above-described material.
The method for forming the counter electrode 6 is not particularly limited, and is formed by, for example, vacuum deposition, sputtering, ion plating, sol-gel, plating, coating, or the like. The thickness of the counter electrode 6 is not particularly limited, but is preferably 1nm to 1 μm. If the counter electrode 6 is too thin, the resistance becomes too high, and the generated charge may not be sufficiently transferred to an external circuit. If the counter electrode 6 is too thick, the film formation takes a long time, and the material temperature increases, and the active layer 51 may be damaged. The sheet resistance of the counter electrode 6 is not particularly limited, and is preferably 500Ω/≡or less, more preferably 200Ω/≡or less. In the case of a current-driven element such as a solar cell or a light-emitting element, 50Ω/≡is more preferable.
In the photoelectric conversion element 1 of the embodiment, the 1 st photoelectric conversion portion 3A and the 2 nd photoelectric conversion portion 3B adjacent to each other are electrically connected by the connection portion 7A. The connection portion 7A is formed by forming the 1 st groove 8A in the photoelectric conversion layer (5) uniformly provided on the transparent electrodes 4A, 4B, and filling a part of the constituent material of the counter electrode 6A of the photoelectric conversion portion 3A in the 1 st groove 8A as the conductor 9A. The trench 8A need not be a trench that divides the 1 st photoelectric conversion layer 5A and the 2 nd photoelectric conversion layer 5B, and may be a through hole that serves as an electrical path. The counter electrode 6A of the photoelectric conversion portion 3A and the transparent electrode 4B of the photoelectric conversion portion 3B are connected in series by a connection portion 7A, the connection portion 7A having a groove 8A and an electrical conductor 9A filled therein. Similarly, the counter electrode 6B of the 2 nd photoelectric conversion portion 3B and the transparent electrode 4C of the 3 rd photoelectric conversion portion 3C adjacent to each other are electrically connected by a connection portion 7B, and the connection portion 7B has a conductor 9B formed by filling a part of the constituent material of the counter electrode 6B in the 1 st groove 8B. Fig. 1 shows a case where the number of photoelectric conversion units 3 constituting the photoelectric conversion element 1 is 3, but the number of photoelectric conversion units 3 is not particularly limited as long as it is a plurality. In the case where the photoelectric conversion element 1 has 4 or more photoelectric conversion portions 3, the adjacent photoelectric conversion portions 3 are electrically connected to each other by the connection portion 7 as well.
In the photoelectric conversion element 1 according to the embodiment, for example, as shown in fig. 3 and 4, between the 1 st photoelectric conversion portion 3A and the 2 nd photoelectric conversion portion 3B adjacent to each other, the adjacent surface (the proximity surface) between the 1 st photoelectric conversion layer 5A and the 2 nd photoelectric conversion layer 5B adjacent to each other is electrically separated by the inactive region 10A having a higher electrical resistance than those of the 1 st and 2 nd photoelectric conversion layers 5A and 5B. The electrical separation between the 1 st photoelectric conversion layer 5A and the 2 nd photoelectric conversion layer 5B represents only the separation between the adjoining faces (approach faces/end faces) between the adjoining 1 st photoelectric conversion layer 5A and 2 nd photoelectric conversion layer 5B, and as described above, the 1 st photoelectric conversion portion 3A and the 2 nd photoelectric conversion portion 3B are electrically connected by the connection portion 7A. In other words, the inactive region 10A is electrically separated between the end face of the 1 st photoelectric conversion layer 5A close to the 2 nd photoelectric conversion layer 5B and the end face of the 2 nd photoelectric conversion layer 5B close to the 1 st photoelectric conversion layer 5A. The same applies to the case of the adjacent 2 nd photoelectric conversion portion 3B and 3 rd photoelectric conversion portion 3C, and the adjacent surface (approach surface) of the adjacent 2 nd photoelectric conversion layer 5B and 3 rd photoelectric conversion layer 5C is electrically separated by the inactive region 10B.
The inactive region 10 (10A, 10B) contains, for example, a compound of halogen and at least a part of metal elements constituting the perovskite compound contained in the active layer 51. Examples of the halide of the metal element include BI 2 、BBr 2 、BCl 2 Such a compound (BX) of at least one B-site metal element selected from lead, germanium and tin with a halogen 2 ). The compound of the metal element and halogen may be an AX compound such as KX, rbX, csX. Halides of these metal elements (BX 2 And AX) has a higher electrical resistance than the perovskite compound, and is a high-resistance body or even an insulator, and thus by disposing the inactive region 10 containing such a compound between the adjoining faces (opposite faces) of the adjoining two photoelectric conversion layers 5, the adjoining faces (opposite faces) of the adjoining two photoelectric conversion layers 5 can be electrically separated more reliably. In view of electrical separability between adjoining faces (opposite faces) of the two photoelectric conversion layers 5, the halide of the metal element preferably contains PbI 2 Such lead halides. By suppressing a short circuit between two adjacent photoelectric conversion layers 5, characteristics such as photoelectric conversion efficiency of the photoelectric conversion element 1 can be improved.
The formation regions, formation modes, and the like of the inactive regions 10 (10A, 10B) described above differ according to the patterning method of the counter electrodes 6 (6A, 6B, 6C). For example, as shown in fig. 3, when the counter electrode (6) is uniformly formed on the photoelectric conversion layer (5) uniformly formed in the manufacturing process, the counter electrode (6) is patterned by forming the 2 nd groove (separation groove) 11 (11A) by scribing together with the photoelectric conversion layer (5). At this time, the separation groove 11 is formed by scribing, for example, mechanically scribing, the laminated film of the counter electrode 6 and the photoelectric conversion layer 5. At this time, the constituent material of the photoelectric conversion layer (5) containing the perovskite compound is soft and viscous, and therefore easily remains in the separation groove 11 after scribing.
In this regard, the residue of perovskite compound or the like in the separation tank 11 is exposed to an air atmosphere, a humidified atmosphere, a predetermined solvent atmosphere, or the like, thereby obtaining ABX 3 The perovskite compound is modified into BX 2 AX, etc. That is, the residue such as the perovskite compound can be made to be an insulator or a high-resistance body having a higher resistance than the perovskite compound. Therefore, even if perovskite compounds and the like remain in the separation tank 11, BX can be reduced 2 AX, etc. are used as constituent materials of the inactive region 10, and thus can improve electrical separability. In addition, even if a part which is not separated partially remains between the adjacent counter electrodes 6, it can be mechanically broken by a volume change or the like caused by the deterioration of the perovskite compound. This is effective in narrowing the width of the separation tank 11.
In addition, as shown in fig. 4, when the counter electrodes 6A, 6B, and 6C are patterned by, for example, mask vapor deposition, the counter electrodes 6A, 6B, and 6C are formed on the uniform photoelectric conversion layer 5, and the photoelectric conversion layer 5 is not divided by the separation grooves 11 shown in fig. 3. In this case, in particular, if the distance between the two adjacent counter electrodes 6 is shortened, there is a possibility that the undivided photoelectric conversion layer 5 may be short-circuited. Therefore, ABX is preferably caused to exist in a space between the adjacent two counter electrodes 6 3 The perovskite compound represented is modified into BX 2 AX, etc. At this time, the perovskite compound located between the two counter electrodes 6 is selectively deteriorated by exposing the perovskite compound to an atmosphere, a humidified atmosphere, a predetermined solvent atmosphere, or the like using the counter electrodes 6A, 6B, 6C as a mask. Therefore, a layer containing BX can be selectively formed between the adjacent two photoelectric conversion layers 5 2 Inactive region 10 of AX, etc.
After the perovskite compound is modified to form a compound containing BX 2 In the case of inactive region 10 such as AX, BX 2 The modified substance such as AX is a high-resistance body or an insulator, and therefore, a part of the inactive region 10 may be constituted by a modified substance of a perovskite compound. In this case, in order to improve the electrical separability of the inactive region 10 between the adjacent two photoelectric conversion layers 5, it is preferable that the inactive region 10 contains 50% by volume or more of the modified perovskite compound. Further, it is more preferable that the inactive region 10 is substantially composed of a modified perovskite compound. The formation region of the inactive region 10 containing the modified perovskite compound is preferably a region within 1 μm from the end of the counter electrode 6. Here, the region within 1 μm from the end of the counter electrode 6 means that the inactive region 10 is formed from the point where the photoelectric conversion layer 5 formed directly under the counter electrode 6 is located from the end (end face) of the counter electrode 6 to the lower side in the stacking direction to the position where it is located within 1 μm from the end face of the counter electrode 6 in the in-plane direction. The inactive region 10 is preferably formed in a region within 300nm, more preferably in a region within 100nm, from the end of the counter electrode 6. This can improve the electrical separation between the adjacent surfaces (facing surfaces) of the two photoelectric conversion layers 5.
As described above, in the photoelectric conversion element 1 of the embodiment, the adjacent surfaces (the proximity surfaces) of the two adjacent photoelectric conversion layers 5 are electrically separated by the inactive region 10 having a higher electrical resistance than the photoelectric conversion layers 5. Therefore, the short circuit between the adjacent two photoelectric conversion layers 5 is suppressed, and thus the characteristics such as the photoelectric conversion efficiency of the photoelectric conversion element 1 can be improved. In addition, by utilizing the deterioration of the perovskite compound during the formation of the inactive region 10, that is, the deterioration of the perovskite compound into BX as a high-resistance body or insulator 2 AX, etc., the opposite electrode 6 and the photoelectric conversion layer 5 can be mechanically separated by the separation groove 11, whereby the adjacent two photoelectric conversion layers 5 can be electrically separated more reliably. That is, even if the perovskite compound remains in the separation tank 11, the perovskite compound remains can be modified to become a high-resistance body or an insulator, and thereforeThe adjacent two photoelectric conversion layers 5 can be electrically separated from each other more reliably. In addition, even when the counter electrode 6 is patterned, by using the patterned counter electrode 6 as a mask and selectively modifying the photoelectric conversion layers 5 to form the inactive region 10, the adjacent two photoelectric conversion layers 5 can be electrically separated from each other more reliably. This can improve the characteristics such as the photoelectric conversion efficiency of the photoelectric conversion element 1.
Next, a method of manufacturing the photoelectric conversion element 1 according to the embodiment will be described with reference to fig. 5A to 5D. Fig. 5A to 5D show a connection process and a separation process between the photoelectric conversion portion 3A and the adjacent photoelectric conversion portion 3B, and a connection process between the photoelectric conversion portion 3B and the adjacent photoelectric conversion portion 3C is similarly performed. In addition, in the same manner, when the photoelectric conversion element 1 has 4 or more photoelectric conversion portions 3, connection between adjacent photoelectric conversion portions 3 and electrical separation between adjacent photoelectric conversion layers 5 are performed in the same process. Here, a process for manufacturing the photoelectric conversion element 1 shown in fig. 3 is shown. The process for manufacturing the photoelectric conversion element 1 shown in fig. 3 includes a process for patterning the counter electrode 6 instead of forming the separation groove 11, and is manufactured in the same manner as the process shown in fig. 5A to 5D except for the configuration and the process.
First, as shown in fig. 5A, the 1 st intermediate layer 52X and the active layer 51X are sequentially formed on the transparent substrate 2 having the transparent electrodes 4A and 4B. The 1 st intermediate layer 52X and the active layer 51X are uniformly (entirely film-like) formed on the transparent substrate 2. Next, as shown in fig. 5B, the laminated film of the 1 st intermediate layer 52X and the active layer 51X is scribed along the region adjacent to the 1 st transparent electrode 4A on the 2 nd transparent electrode 4B to form a groove 8A, and the surface of the 2 nd transparent electrode 4B is exposed in the groove 8A. The grooves 8A are formed by mechanically scribing or laser scribing the laminated film of the 1 st intermediate layer 52X and the active layer 51X. The groove 8A is not limited to a continuous groove shape, and may be a separate shape such as a through hole. Next, the 2 nd intermediate layer 53X and the counter electrode 6X are sequentially formed on the active layer 51X. The 2 nd intermediate layer 53X and the counter electrode 6X are uniformly formed. Since the 2 nd intermediate layer 53X and a part of the counter electrode 6X are filled in the groove 8A, the connection portion 7A is formed.
Next, as shown in fig. 5C, the laminated film of the active layer 51X, the 2 nd intermediate layer 53X, and the counter electrode 6X is scribed along the region adjacent to the 1 st transparent electrode 4A on the 2 nd transparent electrode 4B, thereby forming the 2 nd groove 11A. By forming the 2 nd groove (separation groove) 11A, the laminated film of the active layer 51X, the 2 nd intermediate layer 53X, and the counter electrode 6X is divided, and the active layers 51A, 51B, the 1 st intermediate layers 52A, 52B, and the counter electrodes 6A, 6B corresponding to the photoelectric conversion portions 3A, 3B are formed. The grooves 11A are formed by mechanically scribing or laser scribing the laminated film of the active layer 51X, the 2 nd intermediate layer 53X, and the counter electrode 6X. The grooves 11A may be formed by scraping the intermediate layer 52X of 1 st. However, the separation of the active layer 51X is likely to be insufficient only by the grooves 11A, and thus the inactive region 10A is formed. That is, the constituent material of the active layer 51X is likely to remain in the separation groove 11A, and the residue 12 composed of the perovskite compound as the constituent material of the active layer 51B is likely to be generated. The residue 12 of the perovskite compound causes an electrical short between the 1 st active layer 51A and the 2 nd active layer 51B.
Therefore, as shown in fig. 5D, the element structure formed with the separation tank 11A is exposed to an atmosphere, a humidified atmosphere, a predetermined solvent atmosphere, or the like, whereby the perovskite compound residue 12 in the separation tank 11A is modified to BX 2 AX, etc. That is, by ABX 3 The residue 12 of the represented perovskite compound is modified to form a perovskite compound containing BX 2 Inactive region 10 of high resistance body or insulator such as AX. This enables electrical separation between the 1 st active layer 51A and the 2 nd active layer 51B adjacent to each other. In the step of modifying the perovskite compound residue 12, the element structure formed with the separation groove 11A may be heated or the atmosphere in which the element structure is exposed may be set to a high temperature in order to promote the modification of the perovskite compound residue 12. Thereby, BX can be improved 2 And the formability of high-resistance body or insulator such as AX. In addition, since the connection portion 7A is illustrated in fig. 5D, although the 2 nd active layer 51B is illustrated as being separated, the inactive region 10 is actually formed on the 1 st active layer adjacent theretoThe adjacent surfaces of the active layer 51A and the 2 nd active layer 51B are electrically separated from each other.
Examples
Next, examples and evaluation results thereof will be described.
Example 1
First, a plurality of ITO films having a thickness of 150nm were formed as transparent electrodes on a glass substrate having a thickness of 700. Mu.m. The ITO film is patterned according to a plurality of segments. Next, a nickel oxide layer having a film thickness of about 20nm was formed as the 1 st intermediate layer on the glass substrate having the plurality of ITO films. Next, a perovskite layer was formed as an active layer. Using CH 3 NH 3 PbI 3 As perovskite material. Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) were used at 1:1 as a solvent for the perovskite material ink. After the perovskite material ink was coated on the 1 st intermediate layer, the substrate was immersed in a container containing chlorobenzene. Then, the substrate was taken out and heated at 80 ℃ for 60 minutes, whereby the perovskite layer was formed. The film thickness was about 250nm.
Next, as the 2 nd intermediate layer, a PC60BM ([ 6,6] -phenyl C61 butyric acid methyl ester) film having a film thickness of about 50nm and a BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline) film having a film thickness of about 20nm were prepared. The solution of PC60BM ink was applied and then naturally dried to prepare a PC60BM film. BCP films were made by vacuum evaporation. Next, the laminated film of the 1 st intermediate layer, the perovskite layer, and the 2 nd intermediate layer was scored to form a through hole for a connection portion. In this state, a film was formed by vacuum deposition of Ag as a counter electrode on the 2 nd intermediate layer with a thickness of about 150 nm. Since the through hole is filled with Ag as the counter electrode, the adjacent counter electrode and the transparent electrode are electrically connected by Ag filled in the through hole.
Next, the laminated film of the 1 st intermediate layer, the perovskite layer, the 2 nd intermediate layer, and the counter electrode was mechanically scored so as to separate adjacent photoelectric conversion portions, thereby forming separation grooves for separating adjacent photoelectric conversion portions. The conditions for forming the separation tank are set so as to remove at least the perovskite layer. When observing the inside of the separation tank, the result confirmsThe adjacent photoelectric conversion portions are not completely separated from each other until a residue of the perovskite compound is generated. Then, the element structure formed with the separation tank is exposed to a solvent atmosphere of N, N-Dimethylformamide (DMF), and CH remaining in the separation tank is caused to remain by heating the element structure 3 NH 3 PbI 3 Mainly changes into PbI 2 Thereby forming inactive regions separating adjacent photoelectric conversion layers. When the state of separation between the photoelectric conversion portions was confirmed by observing the thus formed photoelectric conversion elements in a cross-sectional TEM image, it was confirmed that the photoelectric conversion portions (between the photoelectric conversion layers) were sufficiently electrically separated from each other.
Example 2
An element structure having a separation groove was produced in the same manner as in example 1. The element structure was heat-treated at 80℃for 1 hour in an atmosphere of saturated steam. By this heat treatment, CH remaining in the separation tank is caused to remain 3 NH 3 PbI 3 Mainly changes into PbI 2 Thereby forming inactive regions separating adjacent photoelectric conversion layers. When the state of the photoelectric conversion element thus formed was measured in the same manner as in example 1, it was confirmed that the photoelectric conversion portions (photoelectric conversion layers) were sufficiently electrically separated from each other.
Comparative example 1
After the separation grooves were formed, the photoelectric conversion element was fabricated without performing a treatment step in a DMF solvent atmosphere (a step of exposing to a solvent atmosphere). When the state of the photoelectric conversion element thus formed was measured in the same manner as in example 1, it was confirmed that the photoelectric conversion portions (photoelectric conversion layers) were not sufficiently electrically separated from each other.
In addition, while several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other modes, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the patent claims and their equivalents.
Claims (11)
1. A photoelectric conversion element is provided with:
a transparent substrate;
a 1 st photoelectric conversion unit including a 1 st transparent electrode provided on the transparent substrate, a 1 st photoelectric conversion layer which is provided on the 1 st transparent electrode and contains a perovskite compound, and a 1 st counter electrode which is provided on the 1 st photoelectric conversion layer;
a 2 nd photoelectric conversion unit including a 2 nd transparent electrode provided on the transparent substrate adjacent to the 1 st transparent electrode and separated from the 1 st transparent electrode, a 2 nd photoelectric conversion layer provided on the 2 nd transparent electrode adjacent to the 1 st photoelectric conversion layer and including a perovskite compound, and a 2 nd counter electrode provided on the 2 nd photoelectric conversion layer;
a connection unit electrically connecting the 1 st counter electrode and the 2 nd transparent electrode; and
an inactive region provided between the 1 st photoelectric conversion layer and the 2 nd photoelectric conversion layer so as to electrically separate adjacent portions of the 1 st photoelectric conversion layer and the 2 nd photoelectric conversion layer from each other, and having a higher electrical resistance than the 1 st photoelectric conversion layer and the 2 nd photoelectric conversion layer,
the perovskite compound has a composition represented by the following formula,
a general formula: ABX 3 ，
Wherein the A position is at least one monovalent cation selected from the group consisting of methyl ammonium ion, formamidine ion, potassium ion, rubidium ion and cesium ion, the B position is at least one divalent cation selected from the group consisting of lead ion, germanium ion and tin ion, the X position is at least one monovalent halogen anion selected from the group consisting of iodide ion, bromide ion and chloride ion,
the inactive region includes a halide of at least one metal selected from the group consisting of a metal constituting the a-site and a metal constituting the B-site.
2. The photoelectric conversion element according to claim 1, wherein,
the halide of the metal comprises a lead halide.
3. The photoelectric conversion element according to claim 1 or 2, wherein,
the inactive region contains more than 50% by volume of the halide of the metal.
4. The photoelectric conversion element according to claim 1, wherein,
the inactive region is formed in a region within 1 μm from the end of the 2 nd counter electrode.
5. The photoelectric conversion element according to claim 1, wherein,
the inactive region includes a halide of the metal formed on at least a wall surface of a groove provided so as to separate the 1 st photoelectric conversion layer and the 2 nd photoelectric conversion layer adjacent to each other.
6. A method for manufacturing a photoelectric conversion element is provided with:
forming a 1 st transparent electrode and a 2 nd transparent electrode adjacent to the 1 st transparent electrode and separated from the 1 st transparent electrode on a transparent substrate;
a step of forming a photoelectric conversion layer containing a perovskite compound on the transparent substrate so as to cover the 1 st transparent electrode and the 2 nd transparent electrode;
a step of forming a counter electrode on the photoelectric conversion layer; and
and a step of forming an inactive region by modifying a part of the perovskite compound of the photoelectric conversion layer into a substance having a higher electrical resistance than the photoelectric conversion layer, and separating at least the photoelectric conversion layer into a 1 st photoelectric conversion layer and a 2 nd photoelectric conversion layer corresponding to the 1 st transparent electrode and the 2 nd transparent electrode.
7. The method for manufacturing a photoelectric conversion element according to claim 6, wherein,
the perovskite compound has a composition represented by the following formula,
a general formula: ABX 3 ，
The A-site is at least one monovalent cation selected from the group consisting of methyl ammonium ion, formamidine ion, potassium ion, rubidium ion and cesium ion, the B-site is at least one divalent cation selected from the group consisting of lead ion, germanium ion and tin ion, and the X-site is at least one monovalent halogen anion selected from the group consisting of iodide ion, bromide ion and chloride ion.
8. The method for manufacturing a photoelectric conversion element according to claim 7, wherein,
the inactive region includes a halide of at least one metal selected from the group consisting of a metal constituting the a-site and a metal constituting the B-site.
9. The method for manufacturing a photoelectric conversion element according to any one of claims 6 to 8, wherein,
the inactive region is formed by exposing a part of the photoelectric conversion layer to an air atmosphere, a humidified atmosphere, or a solvent atmosphere to deteriorate a part of the perovskite compound.
10. The method for manufacturing a photoelectric conversion element according to claim 8, wherein,
the separation step includes a step of forming separation grooves by scribing the photoelectric conversion layer and the counter electrode in correspondence with the 1 st transparent electrode and the 2 nd transparent electrode, and forming the metal halide on at least a wall surface of the separation grooves.
11. The method for manufacturing a photoelectric conversion element according to claim 10, wherein,
the inactive region is formed by exposing the photoelectric conversion layer and the counter electrode, in which the separation groove is formed, to an atmosphere, a humidified atmosphere, or a solvent atmosphere, and deteriorating a part of the perovskite compound into a halide of the metal.
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