CN111181404A - Isolated power supply chip - Google Patents
Isolated power supply chip Download PDFInfo
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- CN111181404A CN111181404A CN201910587046.0A CN201910587046A CN111181404A CN 111181404 A CN111181404 A CN 111181404A CN 201910587046 A CN201910587046 A CN 201910587046A CN 111181404 A CN111181404 A CN 111181404A
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- primary coil
- shielding layer
- secondary coil
- coil
- isolated power
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
- H01F27/323—Insulation between winding turns, between winding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
Abstract
The invention provides an isolation power supply chip which comprises a planar transformer, wherein the isolation power supply chip comprises a transmitting end and a receiving end, the planar transformer comprises a primary coil positioned at the transmitting end and a secondary coil positioned at the receiving end, the planar transformer also comprises an insulating grid arranged between the primary coil and the secondary coil, and the primary coil and the secondary coil are respectively positioned on two mutually parallel planes and are in a multilayer winding structure; the planar transformer further comprises a shielding layer, and the shielding layer is clamped between the primary coil and the insulated gate. A direct high-frequency coupling path does not exist between the primary coil and the secondary coil, the common-mode voltage fluctuation of the primary coil only forms high-frequency common-mode current in a parasitic capacitor between the primary coil and the shielding layer, the secondary coil is not influenced, and the electromagnetic radiation interference can be further reduced.
Description
Technical Field
The invention relates to an isolated power supply chip, in particular to an isolated power supply chip capable of improving electromagnetic radiation interference.
Background
The isolated power supply chip generally has a relatively small volume, and in the isolated power supply chip, the isolated power supply chip generally includes a transmitting end and a receiving end, wherein the transmitting end includes a primary coil, and the receiving end includes a secondary coil. The primary coil and the primary driver structure form a high-frequency L-C resonant cavity to transmit energy to the secondary coil. The secondary side coil is connected with a rectifier bridge to rectify the received high-frequency current to an isolated power supply for output.
The planar transformer generally has no magnetic core, and the primary winding and the secondary winding are isolated by an insulated gate, and the insulated gate is made of an insulating medium. In order to ensure a sufficient coupling coefficient, the thickness of the insulated gate must not be too thick, so that a certain parasitic capacitance exists between the primary winding and the secondary winding. Because the fluctuation of the common-mode voltage of the primary coil of the planar transformer is large and the frequency is very high, the high-frequency common-mode voltage fluctuation can form high-frequency current paths on two sides of the isolation power domain through parasitic capacitors. Due to the long current return path between isolated power domains, this high frequency energy is easily radiated out in the form of electromagnetic radiation, thereby deteriorating the emi performance of the isolated power.
Therefore, a new isolated power chip must be designed to reduce electromagnetic radiation interference.
Disclosure of Invention
In order to solve one of the problems, the invention provides an isolation power supply chip which comprises a planar transformer, wherein the isolation power supply chip comprises a transmitting end and a receiving end, the planar transformer comprises a primary coil positioned at the transmitting end and a secondary coil positioned at the receiving end, the planar transformer also comprises an insulating grid arranged between the primary coil and the secondary coil, and the primary coil and the secondary coil are respectively positioned on two mutually parallel planes and are in a multilayer winding structure; the planar transformer is characterized by further comprising a shielding layer, wherein the shielding layer is clamped between the primary coil and the insulating grid.
As a further improvement of the present invention, the transmitting terminal includes a power terminal and a ground terminal, two free terminals of the primary coil are respectively connected to the power terminal and the ground terminal, and the shielding layer is connected to the power terminal or the ground terminal.
As a further improvement of the present invention, the transmitting terminal further includes a bypass capacitor connected between the power terminal and the ground terminal.
As a further improvement of the present invention, the shielding layer is disposed parallel to the primary coil and the secondary coil.
As a further improvement of the present invention, the outermost edge of the shielding layer is disposed to cover at least the primary coil and the secondary coil.
As a further improvement of the present invention, the shielding layer includes a connection portion and a plurality of fan blades circumferentially arranged from the connection portion and radially extending outward; the fan piece comprises two side edges extending outwards from the connecting part and an outer edge connected between the two side edges, and the side edges of adjacent fan pieces are spaced from each other.
As a further improvement of the invention, the fan blades are uniform in shape and size and are uniformly arranged around the connecting part.
As a further improvement of the invention, the outer edges of the fan blades are arc-shaped and are all positioned on the same circumference.
As a further improvement of the present invention, the primary coil and the secondary coil are both spiral and have a starting point corresponding to the center of the shielding layer, and the extension lines of the side edges both pass through the center.
As a further improvement of the invention, the distance between the shielding layer and the primary coil is smaller than the distance between the shielding layer and the secondary coil.
Compared with the prior art, the planar transformer further comprises a shielding layer, and the shielding layer is clamped between the primary coil and the insulated gate. A direct high-frequency coupling path does not exist between the primary coil and the secondary coil, the common-mode voltage fluctuation of the primary coil only forms high-frequency common-mode current in a parasitic capacitor between the primary coil and the shielding layer, the secondary coil is not influenced, and the electromagnetic radiation interference can be further reduced.
Drawings
FIG. 1 is a schematic circuit diagram of a planar transformer according to the present invention;
FIG. 2 is a schematic perspective view of a portion of a planar transformer according to the present invention;
FIG. 3 is a front view of a portion of a planar transformer of the present invention;
FIG. 4 is a schematic perspective view of a shielding layer of the planar transformer according to the present invention;
fig. 5 is a side view of a portion of a planar transformer of the present invention.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 5, the present invention provides an isolated power supply chip, in which a planar transformer is built, the isolated power supply chip includes a transmitting end and a receiving end, the planar transformer includes a primary coil Lp located at the transmitting end and a secondary coil Ls located at the receiving end, the planar transformer further includes an insulating grid 10 disposed between the primary coil Lp and the secondary coil Ls, and the insulating grid 10 is made of an insulating medium, such that the primary coil Lp and the secondary coil Ls have high insulation. Of course, the primary coil Lp and the secondary coil Ls are respectively located on two planes parallel to each other and are in a multi-layer winding structure to form an inductor, so that energy on the primary coil Lp can be transmitted to the secondary coil Ls. In the present invention, the planar transformer further includes a shielding layer 20, and the shielding layer 20 is sandwiched between the primary winding Lp and the insulated gate 10. Therefore, a direct high-frequency coupling path does not exist between the primary coil Lp and the secondary coil Ls, the common-mode voltage fluctuation of the primary coil Lp only forms a high-frequency common-mode current in a parasitic capacitor between the primary coil Lp and the shielding layer 20, the secondary coil Ls is not affected, and the electromagnetic radiation interference can be further reduced.
Two free ends of the primary coil Lp are respectively connected to a power supply terminal VDDP and a ground terminal GNDP, and certainly, the primary coil Lp is not directly connected to the ground terminal. Specifically, as shown in fig. 1, the transmitting terminal includes a power terminal VDDP and a ground terminal GNDP, and a first LC resonance branch and a second LC resonance branch connected to the power terminal VDDP and the ground terminal GNDP, and the primary winding Lp includes a first inductor Lp1 and a second inductor Lp 2. The first LC resonance branch comprises a first inductor Lp1, a first capacitor C1 and a first mos tube M1, the first inductor Lp1 and the first capacitor C1 are connected in series with each other and are connected between a power supply terminal VDDP and a ground terminal GNDP, the input end of the first mos tube M1 is connected between the first inductor Lp1 and the first capacitor C1, and the output end of the first mos tube is grounded; the second LC resonant branch comprises the second inductor Lp2, a second capacitor C2, and a second mos transistor M2, the second inductor Lp2 and the second capacitor C2 are connected in series with each other and connected between a power supply terminal VDDP and a ground terminal GNDP, an input end of the second mos transistor M2 is connected between the second inductor Lp2 and the second capacitor C2, and an output end is grounded. Accordingly, the first LC resonance branch and the second LC resonance branch may generate a resonance current and transmit energy to the secondary coil Ls of the receiving end. In this embodiment, the receiving end further includes a rectifier bridge for integrating the current and outputting the current.
In addition, the transmitting terminal further includes a first voltage dividing part Cs1 and a second voltage dividing part Cs2, in this embodiment, both the first voltage dividing part Cs1 and the second voltage dividing part Cs2 are capacitors, one end of the first voltage dividing part Cs1 is connected to the input end of the first mos tube M1, the other end of the first voltage dividing part Cs1 is connected to the control end of the second mos tube M2, one end of the second voltage dividing part Cs2 is connected to the input end of the second mos tube M2, and the other end of the second voltage dividing part Cs2 is connected to the control end of the first mos tube M1. By designing the ratio of the gate parasitic capacitances of the first and second voltage dividing parts Cs1 and Cs2 and the first and second mos transistors M1 and M2, the gate voltages of the first and second mos transistors M1 and M2 can be kept within a stable voltage.
Therefore, in the present embodiment, the shielding layer 20 is connected to the power supply terminal VDDP or the ground terminal GNDP. The shielding layer 20 is made of a metal conductor material, and in this embodiment, a metal conductor material with a low resistance is adopted, and generally, the selected material is the same as the material of the primary coil Lp and the material of the secondary coil Ls, so that a high-frequency common mode current can be further formed between the primary coil Lp and the parasitic capacitor of the shielding layer 20. In the present embodiment, as shown in fig. 1, shield layer 20 is connected to ground terminal GNDP.
Further, the transmitting terminal of the isolated power chip further includes a bypass capacitor Cp connected between the power terminal VDDP and the ground terminal GNDP. Therefore, even if the common-mode voltage fluctuation of the primary coil Lp forms a high-frequency common-mode current between the parasitic capacitance between the primary coil Lp and the shielding layer 20, the bypass capacitance Cp forms a high-frequency low-impedance path between VDDP and GNDP, so that the electromagnetic radiation interference thereof can be suppressed from being radiated outward.
In addition, in the isolated power supply chip of the present invention, the receiving end further includes a rectifier connected in parallel to both ends of the secondary coil Ls, and an isolation feedback device 40 and a driver 50 are further connected in series between the receiving end and the transmitting end, so as to confirm a voltage signal at the receiving end and feed back the voltage signal to the control ends of the first mos transistor M1 and the second mos transistor M2.
In the present embodiment, the shielding layer 20 is disposed in parallel with the primary coil Lp and the secondary coil Ls. This is to make the shielding layer 20 more flat and occupy less space, and certainly, if the shielding layer 20 is not disposed parallel to the primary coil Lp and the secondary coil Ls, the purpose of the present invention can be achieved.
In addition, in order to achieve better shielding between the primary coil Lp and the secondary coil Ls by the shielding layer 20, the outermost edge of the shielding layer 20 is defined to cover at least the primary coil Lp and the secondary coil Ls. As shown in fig. 2 to 3, the primary coil Lp and the secondary coil Ls are formed in a spiral shape, so that the outermost edges of the primary coil Lp and the secondary coil Ls gradually expand outward, but the range defined by the outermost edge of the shielding layer 20 still covers the primary coil Lp and the secondary coil Ls. The outermost edge of the shielding layer 20 is not a continuous line, and the structure of the shielding layer 20 will be described in detail below.
Specifically, the shielding layer 20 includes a connection portion 21 and a plurality of fan blades 22 arranged along a circumferential direction from the connection portion 21 and extending radially outward, and the plurality of fan blades 22 are not overlapped with each other. In the present embodiment, as shown in fig. 2, the fan blades 22 are uniformly arranged around the connection portion 21 in a uniform shape and size. That is, the shape and size of each fan blade 22 are the same, and the distance between adjacent fan blades 22 is also the same. In the present embodiment, the connecting portion 21 is disposed in a circular shape, and accordingly, the fan pieces 22 are disposed around the connecting portion 21, and finally, the shielding layer 20 is also formed in a substantially circular structure.
Because of the electromagnetic induction of the primary coil Lp and the material of the shielding layer 20 is a metal material, an eddy current is formed in the shielding layer 20. The eddy current is a current circulating in the shield layer 20, and the eddy current becomes stronger as the magnetic field changes faster, whereas the eddy current is also stronger due to the high-frequency resonance at the emission end in the present embodiment. Therefore, by providing the fan blades 22 separated from each other, the eddy current is cut off as much as possible, and the eddy current effect can be effectively reduced. So that the coupling coefficient and quality factor of the planar transformer are not affected.
As shown in fig. 4, the fan blade 22 includes two side edges 221 extending outward from the connection portion 21 and an outer edge 222 connected between the two side edges 221. As mentioned above, the adjacent fan blades 22 do not overlap each other, and therefore, the side edges 221 of the adjacent fan blades 22 are spaced from each other. Moreover, the outer edges 222 of the plurality of fan blades 22 are arc-shaped and all located on the same circumference.
Therefore, in the present embodiment, as shown in fig. 2, the outer edge 222 and the extension line of the fan blade 22 may be surrounded to form a perfect circle, and the connection portion 21 is also formed into a perfect circle, and the centers of the two perfect circles overlap.
The primary coil Lp and the secondary coil Ls are both arranged in a spiral shape, and the starting point of the primary coil Lp and the starting point of the secondary coil Ls correspond to the center of the shielding layer 20, and the extension lines of the outer edge 222 both pass through the center. It should be noted that the starting points of the primary coil Lp and the secondary coil Ls are not free ends, but the primary coil Lp and the secondary coil Ls are both spiral, and the spiral lines have a starting point. Starting from the starting point and setting the starting angle, a spiral line can be formed. In the present embodiment, the free ends of the primary coil Lp and the secondary coil Ls do not coincide with the starting point.
Accordingly, a current is generated in the spiral primary coil Lp, and a changing magnetic field is generated, so that an eddy current generated in the shield layer 20 is also circular and circulates around the center of the coil, and the center of the eddy current is defined as the center of the shield layer 20. According to the principle of eddy current generation, the spiral current in the primary coil Lp forms a varying magnetic field, and the center line of the magnetic field passes through the starting point of the primary coil Lp. And eddy currents generated in the shield layer 20 are also formed around the center line. Therefore, the center of the shielding layer 20 corresponds to the starting point of the primary coil Lp and the secondary coil Ls, that is, the positions of the starting points of the primary coil Lp and the secondary coil Ls determine the position of generating the eddy current. In the present embodiment, the extension lines of the side edges 221 of the fan blades 22 all pass through the center, so that the direction of the current at the intersection of the eddy current and the fan blade 22 is perpendicular to the side edges 221 of the fan blade 22. Therefore, the side edge 221 of each fan blade 22 completely cuts off the eddy current, so that the path of the eddy current is discontinuous, the eddy current effect of the shielding layer 20 can be minimized, and the coupling coefficient of the transformer, the inductance value of the primary coil Lp and the quality factor can be prevented from being influenced as much as possible.
In the present embodiment, as shown in fig. 2, since the shield layer 20 has a substantially circular shape, the center of the shield layer 20 coincides with the center of the coupling portion 21, and the center of the shield layer 20 also coincides with the center of the coupling portion.
In addition, as shown in fig. 5, the distance between the shielding layer 20 and the primary coil Lp is smaller than the distance between the shielding layer 20 and the secondary coil Ls. This is because the primary winding Lp and the shielding layer 20 are both on the same side of the insulated gate 10, and thus the distance between them can be small. The distance between the secondary coil Ls and the shielding layer 20 needs to satisfy the requirement of insulation and voltage resistance, so the distance between the secondary coil Ls and the shielding layer 20 needs to be slightly larger than the distance between the primary coil Lp and the shielding layer 20.
Therefore, in summary, the present invention provides an isolated power chip, in which a planar transformer is built, the planar transformer includes a primary coil Lp and a secondary coil Ls, an insulation grid 10 disposed between the primary coil Lp and the secondary coil Ls, and a shielding layer 20 disposed between the insulation grid 10 and the primary coil Lp, so that there is only a weak high-frequency coupling path between the primary coil Lp and the secondary coil Ls, the common-mode voltage fluctuation of the primary coil Lp mainly forms a high-frequency common-mode current in a parasitic capacitor between the primary coil Lp and the shielding layer 20, and only a small amount of high-frequency common-mode current flows into the secondary coil Ls, thereby further reducing electromagnetic radiation interference. In addition, in the present embodiment, the bypass capacitor Cp is further provided between the power supply terminal VDDP and the ground terminal GNDP of the primary coil Lp, so that the high-frequency common mode current between the primary coil Lp and the shielding layer 20 can also pass through the bypass capacitor Cp, and the electromagnetic radiation interference can be further suppressed from being radiated to the outside through the power supply lead and the ground. In addition, the shielding layer 20 comprises a connecting part 21 and a plurality of fan blades 22 arranged along the circumferential direction from the connecting part 21, the side edges 221 of the adjacent fan blades 22 are mutually spaced, and the side edges 221 are perpendicular to the direction of the eddy current in the shielding layer 20 reaching the side edges 221, so that the eddy current effect can be reduced to the maximum extent, and the influence on the coupling coefficient of the planar transformer, the inductance value of the primary coil Lp and the quality factor is reduced.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the embodiments may be appropriately combined to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention and is not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention are included in the scope of the present invention.
Claims (10)
1. An isolation power supply chip comprises a planar transformer, wherein the isolation power supply chip comprises a transmitting end and a receiving end, the planar transformer comprises a primary coil positioned at the transmitting end and a secondary coil positioned at the receiving end, the planar transformer further comprises an insulating grid arranged between the primary coil and the secondary coil, and the primary coil and the secondary coil are respectively positioned on two mutually parallel planes and are in a multilayer winding structure; the planar transformer is characterized by further comprising a shielding layer, wherein the shielding layer is clamped between the primary coil and the insulating grid.
2. The isolated power chip of claim 1, wherein the emitter comprises a power terminal and a ground terminal, the two free terminals of the primary coil are connected to the power terminal and the ground terminal, respectively, and the shielding layer is connected to the power terminal or the ground terminal.
3. The isolated power chip of claim 2, wherein the emitter terminal further comprises a bypass capacitor connected between a power terminal and a ground terminal.
4. The isolated power chip of claim 1, wherein the shielding layer is disposed parallel to the primary coil and the secondary coil.
5. The isolated power chip of claim 1, wherein the outermost edge of the shielding layer is configured to cover at least the primary coil and the secondary coil.
6. The isolated power chip of claim 1, wherein the shielding layer comprises a connection portion and a plurality of fan-shaped pieces arranged circumferentially from the connection portion and extending radially outward; the fan piece comprises two side edges extending outwards from the connecting part and an outer edge connected between the two side edges, and the side edges of adjacent fan pieces are spaced from each other.
7. The isolated power chip of claim 6, wherein the fan-shaped pieces are uniformly shaped and sized and are disposed around the connection portion.
8. The isolated power chip of claim 6, wherein the outer edges of the plurality of fan blades are arc-shaped and all located on the same circumference.
9. The isolated power chip of claim 6, wherein the primary coil and the secondary coil are each helical and have a starting point corresponding to a center of the shielding layer, and an extension line of the side edge passes through the center.
10. The isolated power chip of claim 1, wherein a distance between the shield layer and the primary winding is less than a distance between the shield layer and the secondary winding.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910587046.0A CN111181404B (en) | 2019-07-01 | 2019-07-01 | Isolated power supply chip |
| PCT/CN2019/097954 WO2021000364A1 (en) | 2019-07-01 | 2019-07-26 | Isolated power supply chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910587046.0A CN111181404B (en) | 2019-07-01 | 2019-07-01 | Isolated power supply chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111181404A true CN111181404A (en) | 2020-05-19 |
| CN111181404B CN111181404B (en) | 2020-09-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910587046.0A Active CN111181404B (en) | 2019-07-01 | 2019-07-01 | Isolated power supply chip |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111181404B (en) |
| WO (1) | WO2021000364A1 (en) |
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| CN102163492A (en) * | 2010-12-31 | 2011-08-24 | 崧顺电子（深圳）有限公司 | Transformer without Y capacitor and preparation method thereof |
| CN102308346A (en) * | 2008-12-03 | 2012-01-04 | 平面磁性有限公司 | An integrated planar variable transformer with embedded magnetic core |
| CN202737546U (en) * | 2012-06-28 | 2013-02-13 | 深圳天珑无线科技有限公司 | RCC (Ringing Choke Converter) charger control circuit and charger used for capacitive touch panel mobile terminal |
| CN107395181A (en) * | 2017-08-04 | 2017-11-24 | 桂林航天电子有限公司 | Flat surface transformer isolates solid-state relay and its operation method |
| CN108364768A (en) * | 2017-11-10 | 2018-08-03 | 华为技术有限公司 | Flat surface transformer, power-switching circuit and adapter |
| CN208444729U (en) * | 2018-04-17 | 2019-01-29 | 江苏德嘉源电子科技有限公司 | A kind of no-load voltage ratio and the adjustable flat surface transformer of overcurrent capability |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021635B (en) * | 2012-11-29 | 2016-01-13 | 华为技术有限公司 | A kind of LLC transformer and power-supply device |
| CN106024340A (en) * | 2016-08-02 | 2016-10-12 | 成都线易科技有限责任公司 | Transformer with shielding structure |
| CN206585480U (en) * | 2016-11-14 | 2017-10-24 | 东莞市盈聚电子有限公司 | A kind of low common-mode noise switching power circuit |
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2019
- 2019-07-01 CN CN201910587046.0A patent/CN111181404B/en active Active
- 2019-07-26 WO PCT/CN2019/097954 patent/WO2021000364A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114541A (en) * | 2006-07-28 | 2008-01-30 | 台达电子工业股份有限公司 | Power source converter and transformer |
| CN201138608Y (en) * | 2007-12-14 | 2008-10-22 | 蔡俊东 | Novel planar transformer |
| CN102308346A (en) * | 2008-12-03 | 2012-01-04 | 平面磁性有限公司 | An integrated planar variable transformer with embedded magnetic core |
| CN102163492A (en) * | 2010-12-31 | 2011-08-24 | 崧顺电子（深圳）有限公司 | Transformer without Y capacitor and preparation method thereof |
| CN202737546U (en) * | 2012-06-28 | 2013-02-13 | 深圳天珑无线科技有限公司 | RCC (Ringing Choke Converter) charger control circuit and charger used for capacitive touch panel mobile terminal |
| CN107395181A (en) * | 2017-08-04 | 2017-11-24 | 桂林航天电子有限公司 | Flat surface transformer isolates solid-state relay and its operation method |
| CN108364768A (en) * | 2017-11-10 | 2018-08-03 | 华为技术有限公司 | Flat surface transformer, power-switching circuit and adapter |
| CN208444729U (en) * | 2018-04-17 | 2019-01-29 | 江苏德嘉源电子科技有限公司 | A kind of no-load voltage ratio and the adjustable flat surface transformer of overcurrent capability |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021000364A1 (en) | 2021-01-07 |
| CN111181404B (en) | 2020-09-18 |
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