CN111180537A - Low-dimensional material heterojunction photoelectric detector integrated with multi-port optical waveguide and preparation method thereof - Google Patents
Low-dimensional material heterojunction photoelectric detector integrated with multi-port optical waveguide and preparation method thereof Download PDFInfo
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 18
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Abstract
The invention relates to the field of integrated chips, and discloses a low-dimensional material heterojunction photoelectric detector integrated with a multi-port optical waveguide and a preparation method thereof, wherein the preparation method comprises the following steps: the multi-port optical waveguide consists of N or more than 4 conical input optical waveguides and a central multimode optical waveguide; the 1 × 2 first optical beam splitter is arranged at the optical coupling input end of the routing optical waveguide, and the input ends of every two conical input optical waveguides are connected with a 1 × 2 second optical beam splitter which is respectively connected with the 1 × 2 first optical beam splitter; the low-dimensional material heterojunction film covers the surface of the multi-port optical waveguide, and a first positive electrode, a second positive electrode, a first negative electrode and a second negative electrode are respectively and diagonally covered at two ends of the multi-port optical waveguide and around the central multi-mode optical waveguide; the low-dimensional material heterojunction film is arranged perpendicular to the transmission direction of the central multimode optical waveguide. The detector can detect high-power and multiband optical signals, and has high responsivity and large optical-electric response bandwidth.
Description
Technical Field
The invention relates to the field of integrated chips, in particular to a low-dimensional material heterojunction photoelectric detector integrated with a multi-port optical waveguide and a preparation method thereof.
Background
Photo-electric detectors are commonly used to detect light or other electromagnetic energy. At present, the detector has important practical application in the aspects of wired or wireless communication, sensing, monitoring, national security and the like. Particularly in an opto-electronic integrated chip, an opto-electric detector is one of the receiving-end core chips, which converts high-speed optical data into an electric signal. The photo-electric detector generally uses the thermoelectric effect, the photoelectric effect, and the electric absorption effect of the material to detect the intensity of light. In the optical communication band, the main material systems based on the prior art are III-V materials, germanium (Ge) and silicon (Si). Although detectors based on these material systems have good performance and are commercially available, they still have many disadvantages, such as single optical response wavelength, large device size, complex manufacturing process, high cost, etc.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the problems in the prior art, the invention provides a low-dimensional material heterojunction photoelectric detector integrated with a multi-port optical waveguide and a preparation method thereof.
The technical scheme is as follows: the invention provides a low-dimensional material heterojunction photoelectric detector integrated with a multi-port optical waveguide, which comprises a substrate, a routing optical waveguide and a multi-port optical waveguide, wherein the routing optical waveguide and the multi-port optical waveguide are formed on the substrate, the multi-port optical waveguide consists of N conical input optical waveguides and a central multimode optical waveguide, and N is an even number and is more than or equal to 4; the 1 × 2 first optical splitter is arranged at an optical coupling input end of the routing optical waveguide, the input ends of every two tapered input optical waveguides are connected with one 1 × 2 second optical splitter, and each 1 × 2 second optical splitter is respectively connected with the 1 × 2 first optical splitter; the low-dimensional material heterojunction film covers the surface of the multi-port optical waveguide, and a first positive electrode, a second positive electrode, a first negative electrode and a second negative electrode are respectively and diagonally covered at two ends of the low-dimensional material heterojunction film and around the central multi-mode optical waveguide; the low-dimensional material heterojunction film is perpendicular to the transmission direction of the central multimode optical waveguide.
Preferably, the low-dimensional material heterojunction film consists of a molybdenum disulfide film material layer, a boron nitride film material layer and a black scale film material layer which are sequentially covered from top to bottom or from bottom to top. Because the molybdenum disulfide film material layer and the black scale film material layer have different band gap ranges respectively, the detector can detect optical signals with wave bands of 400-690nm and 1100 nm-4000 nm, and the photoelectric response bandwidth is large.
Preferably, the thickness of the molybdenum disulfide film material layer is 1 nm-20 nm, and the band gap variation range is 1.2 eV-1.9 eV.
Preferably, the thickness of the black scale film material layer is 1nm to 20nm, and the band gap variation range is 0.3eV to 1 eV.
Preferably, graphene resistive heaters are further respectively disposed on the routing optical waveguides between the 1 × 2 second optical splitters and the input ends of the tapered input optical waveguides. The paths of optical signals divided into two paths by the 1 x 2 optical beam splitter and transmitted to the tapered input optical waveguides from the routing optical waveguides on the two sides respectively have differences, so that the time for the optical signals on the two sides to reach the detection region is different, and the high-speed optical signal detection quality is poor.
Preferably, each graphene resistance heater is 200nm to 3000nm away from the input end of each tapered input optical waveguide.
Preferably, the routing optical waveguide and the multiport optical waveguide are both made of materials having low transmission loss in the optical band range of 400-4000 nm.
Preferably, the routing optical waveguide and the multiport optical waveguide are made of silicon nitride materials, lithium niobate materials or aluminum nitride materials.
Preferably, the minimum spacing of the first positive electrode, the second positive electrode, the first negative electrode and the second negative electrode from the routing optical waveguide and the multiport optical waveguide is greater than 900 nm.
The invention also provides a preparation method of the low-dimensional material heterojunction photoelectric detector integrated with the multi-port optical waveguide, which comprises the following steps: s1: preparing a multi-port optical waveguide, a 1 × 2 first optical splitter, a 1 × 2 second optical splitter, a routing optical waveguide and an optical coupling input end thereof on the upper surface of the substrate through electron beam exposure or photoetching and ICP (inductively coupled plasma) etching processes; s2: depositing a low-refractive-index material layer on the routing optical waveguide and the multi-port optical waveguide, and then utilizing a chemical mechanical polishing technology to realize the planarization of the surfaces and two sides of the routing optical waveguide and the multi-port optical waveguide; s3: transferring a molybdenum disulfide film material layer and a graphene film material layer on the upper surfaces of the flattened routing optical waveguide and the multi-port optical waveguide; s4: mechanically transferring the flaky boron nitride film material layer and the black scale film material layer to the upper surface of the molybdenum disulfide film material layer, and removing the redundant molybdenum disulfide film material layer, the boron nitride film material layer and the black scale film material layer by using electron beam exposure or photoetching and oxygen plasma etching processes to form a low-dimensional material heterojunction film; s9: depositing metal material layers on two sides of the low-dimensional material heterojunction film to form a first positive electrode, a second positive electrode, a first negative electrode and a second negative electrode; at the same time, a graphene resistive heater is formed.
Has the advantages that: in the low-dimensional material heterojunction photoelectric detector integrated with the multiport optical waveguide, the incident light with higher power passing through the optical coupling input end of the routing optical waveguide is divided into two paths by the 1 multiplied by 2 first optical beam splitter, two paths of optical signals are respectively transmitted to the 1 multiplied by 2 second optical beam splitters through the routing optical waveguides on the two sides, and then are respectively divided into two paths by the 1 multiplied by 2 second optical beam splitters, and each path of optical signal is respectively transmitted to each conical input optical waveguide of the multiport optical waveguide through the routing optical waveguides on the two sides, because of the conical waveguide structure, the energy release process of the optical signal in each conical input optical waveguide is slow and uniform until the optical signal is transmitted to the interaction area of the central multimode optical waveguide and the low-dimensional material heterojunction film through each conical input optical waveguide and is absorbed, the photoelectric detector can avoid saturation quickly and detect optical signals with higher power; in addition, the photoelectric detector in the invention is provided with a plurality of 1 multiplied by 2 optical beam splitters, so that optical signals with higher power can be divided into a plurality of paths, and the photoelectric detector can detect optical signals with higher power.
In summary, the invention has the following advantages:
the invention benefits from the adjustable energy bands of the molybdenum disulfide film material layer and the black scale film material layer, and can detect a plurality of wave bands: 400-690nm and 1100-4000 nm;
the invention benefits from the design of the multi-port optical waveguide, can divide the high optical power signal into multiple paths for parallel detection, and then realizes the detection of the high input optical power signal;
the invention benefits from the design of the central multimode optical waveguide, can limit light in the area, enhances the interaction of the light and the low-dimensional material heterojunction film, and is beneficial to improving the responsivity of the detector.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a low dimensional material heterojunction photodetector integrated with a multiport optical waveguide;
FIG. 2 is a top view of a portion of a structure of a low dimensional material heterojunction photodetector integrated with a multiport optical waveguide;
FIG. 3 is a cross-sectional view taken at E-E of FIG. 2;
FIG. 4 is a cross-sectional view taken at F-F of FIG. 2;
FIG. 5 is a schematic cross-sectional structure of a low dimensional material heterojunction thin film;
fig. 6 to 8 are top views of different configurations of multiport optical waveguides, respectively.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
Embodiment 1:
the embodiment provides a low-dimensional material heterojunction photoelectric detector integrated with a multi-port optical waveguide, which mainly comprises a substrate 1, a routing optical waveguide 2, a multi-port optical waveguide, a 1 × 2 first optical beam splitter 5, two 1 × 2 second optical beam splitters 7, a low-dimensional material heterojunction film 9 with the thickness of 9 nm-100 nm, a first positive electrode 10, a second positive electrode 11, a first negative electrode 12, a second negative electrode 13 and four graphene resistance heaters 8 as shown in fig. 1-5. The routing optical waveguide 2 and the multi-port optical waveguide are both formed on the substrate 1, the 1 × 2 first optical splitter 5 is arranged at the optical coupling input end 6 of the routing optical waveguide 2, the multi-port optical waveguide is composed of 4 tapered input optical waveguides 3 and a central multimode optical waveguide 4 (or even number of tapered input optical waveguides 3 larger than or equal to the above and a central multiple polished waveguide 4, as shown in fig. 6 to 8), the input ends of every two tapered input optical waveguides 3 are connected with one 1 × 2 second optical splitter 7, and the two 1 × 2 second optical splitters 7 are respectively connected with the 1 × 2 first optical splitter 5; the low-dimensional material heterojunction film 9 covers the surface of the multi-port optical waveguide, and a first positive electrode 10, a second positive electrode 11, a first negative electrode 12 and a second negative electrode 13 are respectively and diagonally covered at two ends of the low-dimensional material heterojunction film 9 and around the central multimode optical waveguide 4; the minimum spacing of the first positive electrode 10, the second positive electrode 11, the first negative electrode 12 and the second negative electrode 13 from the routing optical waveguide 2 and the multiport optical waveguide is greater than 900 nm. The low-dimensional material heterojunction film 9 is arranged vertically to the transmission direction of the central multimode optical waveguide 4 and consists of a molybdenum disulfide film material layer 901, a boron nitride film material layer 902 and a black scale film material layer 903 which are sequentially covered from top to bottom or from bottom to top, wherein the thickness of the molybdenum disulfide film material layer 901 is 1nm to 20nm, the variation range of a band gap is 1.2eV to 1.9eV, the thickness of the boron nitride film material layer 902 is 1nm to 10nm, the thickness of the black scale film material layer 903 is 1nm to 20nm, and the variation range of the band gap is 0.3eV to 1 eV; the four graphene resistive heaters 8 are respectively arranged on the routing optical waveguide 2 between the two 1 × 2 second optical splitters 7 and the input ends of the four tapered input optical waveguides 3, and the distances between the four graphene resistive heaters 8 and the input ends of the four tapered input optical waveguides 3 of the multi-port optical waveguide are 200nm-3000 nm.
The routing optical waveguide 2 and the multiport optical waveguide are both made of materials having low transmission loss in the optical band range of 400-4000nm, and silicon nitride materials, lithium niobate materials or aluminum nitride materials are preferably used.
The preparation method of the low-dimensional material heterojunction photoelectric detector integrated with the multi-port optical waveguide comprises the following steps of:
s1: preparing a multi-port optical waveguide, a routing optical waveguide 2 and an optical coupling input end 6 of the routing optical waveguide 2, a 1 × 2 first optical splitter and two 1 × 2 second optical splitters on the upper surface of a substrate 1 by electron beam exposure and photoetching or ICP (inductively coupled plasma) etching technology;
s2: depositing a low-refractive-index material layer 14 on the routing optical waveguide 2 and the multi-port optical waveguide, and then utilizing a chemical mechanical polishing technology to realize the planarization of the surfaces and two sides of the routing optical waveguide 2 and the multi-port optical waveguide;
s3: transferring a molybdenum disulfide film material layer 901 and a graphene film material layer on the upper surfaces of the flattened routing optical waveguide 2 and the multi-port optical waveguide;
s4: sequentially and mechanically transferring the flaky boron nitride film material layer 902 and the black scale film material layer 903 to the upper surface of the molybdenum disulfide film material layer 901, and removing the redundant molybdenum disulfide film material layer 901, the boron nitride film material layer 902 and the black scale film material layer 903 by using electron beam exposure and photoetching or oxygen plasma etching technology to form the low-dimensional material heterojunction film 9;
s9: depositing metal material layers on two sides of the low-dimensional material heterojunction film 9 to form a first positive electrode 10, a second positive electrode 11, a first negative electrode 12 and a second negative electrode 13; at the same time, four graphene resistance heaters 8 are formed.
The working principle of the low-dimensional material heterojunction photoelectric detector integrated with the multi-port optical waveguide is as follows:
the incident light with high power enters the routing optical waveguide 2 through the optical coupling input end 6 of the routing optical waveguide 2 and is divided into two paths by the 1 × 2 first optical beam splitter 5, two paths of optical signals are respectively transmitted to the two 1 × 2 second optical beam splitters 7 through the routing optical waveguides 2 on two sides, the two 1 × 2 second optical beam splitters 7 are divided into four paths of optical signals, and when the four paths of optical signals respectively pass through the four graphene resistance heaters 8, because the graphene resistance heaters 8 can heat the routing optical waveguides 2 on two sides to change the refractive index thereof, the transmission rate of the optical signals in the routing optical waveguide 2 is adjusted, so that the optical signals in the routing optical waveguides 2 on two sides can simultaneously reach the four conical input optical waveguides 3 of the multi-port optical waveguide, because of the conical waveguide structure, the energy release process of the optical signals in each conical input optical waveguide 3 is slow and uniform, until the light is transmitted to the interaction area of the central multimode optical waveguide 4 and the low-dimensional material heterojunction film 9 through the four conical input optical waveguides 3 and absorbed, so that the photoelectric detector can detect optical signals with better quality. Because the multi-port optical waveguide is provided with the plurality of conical input optical waveguides 3, the energy release process is relatively slow and uniform when the optical signals are transmitted in the conical waveguide structure until the optical signals reach the central multimode optical waveguide 4 and are absorbed, so that the photoelectric detector can avoid being saturated quickly and can detect the optical signals with higher power; the molybdenum disulfide thin film material layer 901 and the black scale thin film material layer 903 in the low-dimensional material heterojunction thin film 9 respectively absorb optical signals of 400-690nm wave bands and 1100 nm-4000 nm wave bands in optical signals, so that the photoelectric detector can detect multiband optical signals.
The above embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A low dimensional material heterojunction photodetector integrated with a multiport optical waveguide, comprising: a substrate (1) on which both a routing optical waveguide (2) and a multi-port optical waveguide are formed, said multi-port optical waveguide being composed of N tapered input optical waveguides (3) and a central multimode optical waveguide (4), where N is an even number and is greater than or equal to 4; the 1 × 2 first optical beam splitters (5) are arranged at the optical coupling input end (6) of the routing optical waveguide (2), the input ends of every two conical input optical waveguides (3) are connected with one 1 × 2 second optical beam splitter (7), and the 1 × 2 second optical beam splitters (7) are respectively connected with the 1 × 2 first optical beam splitters (5); the surface of the multi-port optical waveguide (4) is covered by a low-dimensional material heterojunction film (9), and a first positive electrode (10), a second positive electrode (11), a first negative electrode (12) and a second negative electrode (13) are respectively and diagonally covered at two ends of the low-dimensional material heterojunction film (9) and the periphery of the central multi-mode optical waveguide (4); the low-dimensional material heterojunction film (9) is arranged perpendicular to the transmission direction of the central multimode optical waveguide (4).
2. The multi-port optical waveguide integrated low dimensional material heterojunction photodetector as claimed in claim 1, wherein said low dimensional material heterojunction film (9) is composed of a molybdenum disulfide film material layer (901), a boron nitride film material layer (902) and a black scale film material layer (903) which are sequentially covered from top to bottom or from bottom to top.
3. The low dimensional material heterojunction photodetector integrated with a multiport optical waveguide as in claim 2, wherein the thickness of the molybdenum disulfide thin film material layer (901) is 1nm to 20nm, and the band gap variation range is 1.2eV to 1.8 eV.
4. The low dimensional material heterojunction photodetector integrated with a multiport optical waveguide according to claim 2, wherein the thickness of the black scale thin film material layer (903) is 1nm to 20nm, and the band gap variation range is 0.3eV to 1 eV.
5. The multi-port optical waveguide integrated low dimensional material heterojunction photodetector of any one of claims 1 to 4, wherein graphene resistive heaters (8) are further respectively disposed on the routing optical waveguides (2) between each of the 1 x 2 second optical splitters (7) and the input ends of each of the tapered input optical waveguides (3).
6. The multi-port optical waveguide integrated low dimensional material heterojunction photodetector of claim 5, wherein each of said graphene resistive heaters (8) is respectively 200nm to 3000nm from said routing optical waveguide.
7. The low dimensional material heterojunction photodetector integrated with a multiport optical waveguide according to any of claims 1 to 4, characterized in that the materials of the routing optical waveguide (2) and the multiport optical waveguide are both materials with low transmission loss in the optical band range of 400-4000 nm.
8. The low dimensional material heterojunction photodetector integrated with a multiport optical waveguide according to claim 7, wherein the materials of the routing optical waveguide (2) and the multiport optical waveguide are silicon nitride material, lithium niobate material or aluminum nitride material.
9. The low dimensional material heterojunction photodetector integrated with a multiport optical waveguide according to any of claims 1 to 4, characterized in that the minimum spacing of the first positive electrode (10), the second positive electrode (11), the first negative electrode (12) and the second negative electrode (13) from the routing optical waveguide (2) and the multiport optical waveguide is all greater than 900 nm.
10. A method of fabricating a multi-port optical waveguide integrated low dimensional material heterojunction photodetector as claimed in any of claims 1 to 9, comprising the steps of:
s1: preparing a multi-port optical waveguide, a 1 x 2 first optical splitter, a 1 x 2 second optical splitter, a routing optical waveguide (2) and an optical coupling input end (6) thereof on the upper surface of the substrate (1) through electron beam exposure or photoetching and an ICP (inductively coupled plasma) etching process;
s2: depositing a low refractive index material layer (14) on the routing optical waveguide (2) and the multi-port optical waveguide, and then utilizing a chemical mechanical polishing technology to realize the planarization of the surfaces and two sides of the routing optical waveguide (2) and the multi-port optical waveguide;
s3: transferring a molybdenum disulfide thin film material layer (901) and a graphene thin film material layer on the upper surfaces of the flattened routing optical waveguide (2) and the multi-port optical waveguide;
s4: mechanically transferring the flaky boron nitride film material layer (902) and the black scale film material layer (903) to the upper surface of the molybdenum disulfide film material layer (901), and removing the redundant molybdenum disulfide film material layer (901), the boron nitride film material layer (902) and the black scale film material layer (903) by using electron beam exposure or photoetching and oxygen plasma etching processes to form a low-dimensional material heterojunction film (9);
s9: depositing metal material layers on two sides of the low-dimensional material heterojunction film to form a first positive electrode (10), a second positive electrode (11), a first negative electrode (12) and a second negative electrode (13); simultaneously, a graphene resistance heater (8) is formed.
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| CN202110401485.5A CN113284962B (en) | 2020-01-17 | 2020-01-17 | Preparation method of low-dimensional material heterojunction photoelectric detector integrated with multi-port optical waveguide |
| CN202010055133.4A CN111180537B (en) | 2020-01-17 | 2020-01-17 | Low-dimensional material heterojunction photoelectric detector integrated with multi-port optical waveguide |
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| CN113284962A (en) | 2021-08-20 |
| CN111180537B (en) | 2021-05-25 |
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Application publication date: 20200519 Assignee: Shanghai Houfei Energy Technology Co.,Ltd. Assignor: HUAIYIN INSTITUTE OF TECHNOLOGY Contract record no.: X2021980014318 Denomination of invention: Low dimensional material heterojunction photodetector with integrated multi port optical waveguide Granted publication date: 20210525 License type: Common License Record date: 20211213 |