CN111175640B - 一种改进型集成电路tem小室辐射发射测量装置及方法 - Google Patents
一种改进型集成电路tem小室辐射发射测量装置及方法 Download PDFInfo
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- CN111175640B CN111175640B CN202010051010.3A CN202010051010A CN111175640B CN 111175640 B CN111175640 B CN 111175640B CN 202010051010 A CN202010051010 A CN 202010051010A CN 111175640 B CN111175640 B CN 111175640B
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- 238000012360 testing method Methods 0.000 claims abstract description 94
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- 230000005672 electromagnetic field Effects 0.000 claims abstract description 10
- 238000002955 isolation Methods 0.000 claims abstract description 4
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- 238000005259 measurement Methods 0.000 claims description 25
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2862—Chambers or ovens; Tanks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
- G01R31/002—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing where the device under test is an electronic circuit
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
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CN202010051010.3A CN111175640B (zh) | 2020-01-17 | 2020-01-17 | 一种改进型集成电路tem小室辐射发射测量装置及方法 |
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CN202010051010.3A CN111175640B (zh) | 2020-01-17 | 2020-01-17 | 一种改进型集成电路tem小室辐射发射测量装置及方法 |
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CN111175640A CN111175640A (zh) | 2020-05-19 |
CN111175640B true CN111175640B (zh) | 2022-07-19 |
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CN114236367B (zh) * | 2021-12-16 | 2024-02-09 | 中国人民解放军国防科技大学 | 一种改进型集成电路带状线小室测量装置 |
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KR100367089B1 (ko) * | 2000-12-23 | 2003-01-09 | 한국전자통신연구원 | 와이 티이엠 셀을 이용한 전력 패턴 및 총복사 전력 측정시스템 및 그 방법 |
CN103499404B (zh) * | 2013-10-10 | 2016-01-20 | 南昌航空大学 | 铁磁构件交变应力测量装置及其测量方法 |
CN108663588B (zh) * | 2018-04-10 | 2020-06-30 | 歌尔科技有限公司 | 电磁测试探头、电磁测试装置和电磁测试方法 |
CN109324300A (zh) * | 2018-11-17 | 2019-02-12 | 中国科学院理化技术研究所 | 磁体空间的磁场测量装置、测试系统及测试方法 |
CN109655689B (zh) * | 2018-12-20 | 2020-11-17 | 西北核技术研究所 | 一种用于tem小室的低扰动支撑结构 |
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Address after: 300459 No.399 Huixiang Road, Tanggu ocean hi tech Zone, Binhai New Area, Tianjin Patentee after: Tianjin Institute of advanced technology Country or region after: China Patentee after: National University of Defense Technology Address before: 300450 No. 399, Huixiang Road, Tanggu marine high tech Zone, Binhai New Area, Tianjin Patentee before: TIANJIN BINHAI CIVIL-MILITARY INTEGRATED INNOVATION INSTITUTE Country or region before: China Patentee before: National University of Defense Technology |