CN111162147A - Flexible GaN-based MIS device applied to graphene and preparation method thereof - Google Patents
Flexible GaN-based MIS device applied to graphene and preparation method thereof Download PDFInfo
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- CN111162147A CN111162147A CN202010079228.XA CN202010079228A CN111162147A CN 111162147 A CN111162147 A CN 111162147A CN 202010079228 A CN202010079228 A CN 202010079228A CN 111162147 A CN111162147 A CN 111162147A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000004544 sputter deposition Methods 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000969 carrier Substances 0.000 claims abstract description 11
- 230000005641 tunneling Effects 0.000 claims abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 4
- 238000005411 Van der Waals force Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 4
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- -1 graphite alkene Chemical class 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 62
- 229910002601 GaN Inorganic materials 0.000 description 59
- 239000010408 film Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The invention discloses a flexible GaN-based MIS device applied to graphene, which comprises a GaN thin film layer, an AlN sputtering layer, a graphene layer and a metal electrode layer; the invention also discloses a preparation method of the flexible GaN-based MIS device applied to the graphene, the preparation method is realized in an epitaxial growth mode, GaN is used as a semiconductor to provide local current carriers, the AlN sputtering layer is used as a dielectric layer to realize tunneling, and the graphene is used as a metal electrode to provide current carriers which are acted with the semiconductor. The beneficial effects of the invention are: the preparation method is simple and easy to realize, has no special requirements on the substrate, can easily realize flexibility, can be placed on any flexible substrate and can be normally used, the performance of the GaN-based MIS device is basically not influenced under the flexible condition, and the preparation method is low in cost and easy to realize.
Description
Technical Field
The invention relates to the technical field of semiconductor materials and devices, in particular to a flexible GaN-based MIS device applied to graphene.
Background
Gallium nitride (GaN) is one of the representatives of the third generation wide bandgap semiconductor, and its superior properties, i.e. higher breakdown electric field, electron mobility, two-dimensional electron gas concentration and working capability under high temperature condition. Gallium nitride (GaN) materials have a forbidden band width of 3.4eV and very low intrinsic carriers at room temperature, and thus devices tend to have very low leakage currents. In addition, gallium nitride (GaN) materials are chemically stable, resistant to high temperatures and corrosion, inherently superior in high frequency, high power and radiation resistant application fields, and electronic devices based on AlN, GaN heterojunctions have been widely used in the semiconductor field. The metal-insulator-semiconductor (MIS) capacitor structure is the simplest and practical structure for studying the variation of semiconductor surface property with external voltage, and its components are gate electrode metal, insulating layer and semiconductor substrate. An external voltage is applied between the semiconductor substrate and the metal layer to generate a surface potential, wherein the voltage is positive when the metal layer is forward biased relative to the semiconductor layer and negative when the metal layer is reverse biased relative to the semiconductor layer. The MIS device is mainly applied to the conditions such as HEMT device, plasma element, MIS-LED and the like based on the relation of current carriers and bias voltage, and the current MIS device based on GaN is mainly based on a specific substrate such as Si, SiC or sapphire and the like, so that the flexibility is difficult to realize; and the metal layer is mainly prepared by electroplating or sputtering metal, so that the metal layer can limit the light emission when being applied to the MIS-LED structure, and the light emitting efficiency is greatly reduced.
Disclosure of Invention
The invention aims to provide a flexible GaN-based MIS device applied to graphene and a preparation method thereof, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: the flexible GaN-based MIS device applied to the graphene comprises a GaN thin film layer, an AlN sputtering layer, a graphene layer and a metal electrode layer, wherein the graphene layer is located on the AlN sputtering layer, the AlN sputtering layer wraps the graphene layer and is located on the GaN thin film layer, the GaN thin film layer is located on the metal electrode layer, the metal electrode layer comprises a metal layer and a substrate, and the metal layer is plated on the substrate.
Preferably, the graphene layer is multi-layer graphene, and the number of layers is more than or equal to 5.
More preferably, the AlN sputtering layer is 8-12 nm thick.
Preferably, the thickness of the GaN thin film layer is 3-5 μm.
The invention also provides a preparation method of the flexible GaN-based MIS device applied to the graphene, which comprises the following steps:
s1) extending graphene on a sapphire substrate in a plasma chemical vapor Phase Epitaxy (PECVD) mode to form a graphene layer;
s2) carrying out sputtering on the AlN on the graphene layer by adopting a magnetron sputtering mode to form an AlN sputtering layer;
s3) extending GaN on the AlN sputtering layer by means of chemical vapor deposition to form a GaN thin film layer;
s4) the sapphire substrate, the graphene layer, the AlN sputtering layer and the GaN film layer form an epitaxial structure of the GaN-based MIS device, the graphene layer, the AlN sputtering layer and the GaN film layer form the GaN-based MIS structure, and the GaN-based MIS structure is transferred from the sapphire substrate in the epitaxial structure and placed on the metal electrode layer in an inverted mode to form the GaN-based MIS device.
Further preferably, the metal electrode layer may be implemented by a metal layer that forms an ohmic contact with GaN.
Further preferably, the GaN-based MIS device requires an appropriate bias voltage to realize different operating states at different bias voltages to achieve the effect of enhancing the carrier concentration.
Further preferably, in the GaN-based MIS device, GaN serves as a semiconductor to provide local carriers, an AlN sputtered layer serves as a dielectric layer to realize tunneling, graphene serves as a metal electrode to provide carriers acting with the semiconductor, self-support is realized by weak van der waals force of the graphene and flexibility is realized based on characteristics of GaN materials and the graphene.
Advantageous effects
The preparation method of the flexible GaN-based MIS device applied to the graphene is simple and easy to implement, has no special requirements on the substrate, can easily implement flexibility, can be placed on any flexible substrate and can be normally used, the performance of the GaN-based MIS device is basically not influenced under the flexible condition, and the flexible GaN-based MIS device is low in cost and easy to implement.
Drawings
Fig. 1 is a schematic structural diagram of a flexible GaN-based MIS device applied to graphene according to an embodiment of the present invention;
fig. 2 is a schematic view of an epitaxial structure of a flexible GaN-based MIS device applied to graphene according to an embodiment of the present invention;
fig. 3 is a schematic diagram of output capacitance and bias voltage of a flexible GaN-based MIS device applied to graphene according to an embodiment of the present invention.
Reference numerals
The solar cell comprises a 1-GaN thin film layer, a 2-AlN sputtering layer, a 3-graphene layer, a 4-sapphire substrate, a 5-metal layer and a 6-substrate.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
Examples
As shown in fig. 1 to 3, a flexible GaN-based MIS device applied on graphene includes a GaN thin film layer 1, an AlN sputtered layer 2, a graphene layer 3 and a metal electrode layer, where the graphene layer 3 is located on the AlN sputtered layer 2, the AlN sputtered layer 2 wraps the graphene layer 3 and is located on the GaN thin film layer 1, the GaN thin film layer 1 is located on the metal electrode layer, the metal electrode layer includes a metal layer 5 and a substrate 6, the metal layer 5 is plated on the substrate 6, the substrate 6 may be any substrate including a flexible substrate, and in this embodiment, the substrate 6 is a flexible substrate wrapped with a high-temperature adhesive tape of a quartz rod with a thickness of 4 mm.
The graphene layer 3 is multi-layer graphene, and the number of layers is 5.
The AlN sputtering layer 2 has a thickness of 10nm and ensures high crystal quality, and is realized by magnetron deposition at a high temperature of 800 ℃ in the embodiment.
The thickness of the GaN thin film layer 1 is 4 μm, and sufficiently high crystal quality and sufficiently low biaxial stress are ensured.
A preparation method of a flexible GaN-based MIS device applied to graphene comprises the following steps:
s1) extending graphene on the sapphire substrate 4 in a plasma chemical vapor Phase Epitaxy (PECVD) mode to form a graphene layer 3;
s2) carrying out sputtering on AlN on the graphene layer 3 by adopting a magnetron sputtering mode to form an AlN sputtering layer 2;
s3) extending GaN on the AlN sputtering layer 2 by a chemical vapor deposition mode to form a GaN thin film layer 1;
s4) the sapphire substrate 4, the graphene layer 3, the AlN sputtering layer 2 and the GaN film layer 1 form an epitaxial structure of the GaN-based MIS device, the graphene layer 3, the AlN sputtering layer 2 and the GaN film layer 1 form the GaN-based MIS structure, and the GaN-based MIS structure is transferred from the sapphire substrate 4 in the epitaxial structure and placed on the metal electrode layer in an inverted mode to form the GaN-based MIS device.
The metal electrode layer may be implemented by a metal layer that can form an ohmic contact with GaN contact.
The GaN-based MIS device needs proper bias voltage to realize different working states under different bias voltages so as to achieve the effect of enhancing the carrier concentration.
In the GaN-based MIS device, GaN serves as a semiconductor to provide local carriers, the AlN sputtering layer 2 serves as a dielectric layer to realize tunneling, graphene serves as a metal electrode to provide carriers which act with the semiconductor, self-support is realized through weak van der Waals force of the graphene, and flexibility is realized based on characteristics of GaN materials and the graphene.
The specific working principle of the flexible GaN-based MIS device applied to the graphene is as follows:
the carrier concentration accumulation in the gallium nitride (GaN) semiconductor material is realized by utilizing the structure, when the bias voltage applied between graphene and GaN is positive bias voltage, the surface potential of the semiconductor is negative at the moment, the energy band of the GaN surface area is bent upwards, and because the Fermi level of electrons in the GaN is almost kept unchanged under the thermal equilibrium condition, the Fermi level is gradually approached to the valence band bottom of the GaN surface area along with the bending of the energy band, so that the majority of carriers, namely electrons are accumulated near the surface of the GaN material, and the accumulation state is formed.
The capacitance and voltage tests are respectively carried out on the GaN-based MIS device transferred to the glass substrate and the flexible substrate in the embodiment, as shown in FIG. 3, the measured C-V curve is almost unchanged, which proves that the GaN-based MIS structure has good adaptability to the flexible substrate and can normally work in a working environment with curvature, and the property of the GaN-based MIS device is almost not influenced under the flexible condition.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the content of the present invention within the scope of the protection of the present invention.
Claims (8)
1. The utility model provides a be applied to flexible GaN base MIS device on graphite alkene which characterized in that: the GaN thin film layer comprises a GaN thin film layer (1), an AlN sputtering layer (2), a graphene layer (3) and a metal electrode layer, wherein the graphene layer (3) is located on the AlN sputtering layer (2), the AlN sputtering layer (2) wraps the graphene layer (3) and is located on the GaN thin film layer (1), the GaN thin film layer (1) is located on the metal electrode layer, the metal electrode layer comprises a metal layer (5) and a substrate (6), and the metal layer (5) is plated on the substrate (6).
2. The flexible GaN-based MIS device applied on graphene as claimed in claim 1 wherein: the graphene layer (3) is multi-layer graphene, and the number of layers is more than or equal to 5.
3. The flexible GaN-based MIS device applied on graphene as claimed in claim 1 wherein: the AlN sputtering layer (2) is 8-12 nm thick.
4. The flexible GaN-based MIS device applied on graphene as claimed in claim 1 wherein: the thickness of the GaN thin film layer (1) is 3-5 mu m.
5. A method for preparing a flexible GaN-based MIS device applied to graphene according to any of claims 1-4, which comprises the following steps:
s1) extending graphene on a sapphire substrate (4) in a plasma chemical vapor Phase Epitaxy (PECVD) mode to form a graphene layer (3);
s2) carrying out sputtering of AlN on the graphene layer (3) by adopting a magnetron sputtering mode to form an AlN sputtering layer (2);
s3) GaN is epitaxially grown on the AlN sputtering layer (2) by means of chemical vapor deposition to form a GaN thin film layer (1);
s4) the sapphire substrate (4), the graphene layer (3), the AlN sputtering layer (2) and the GaN thin film layer (1) form an epitaxial structure of the GaN-based MIS device, the graphene layer (3), the AlN sputtering layer (2) and the GaN thin film layer (1) form the GaN-based MIS structure, and the GaN-based MIS structure is transferred from the sapphire substrate (4) in the epitaxial structure and placed on the metal electrode layer in an inverted mode to form the GaN-based MIS device.
6. The method for preparing the flexible GaN-based MIS device applied to the graphene as claimed in claim 5, wherein: the metal electrode layer may be implemented by a metal layer that can form an ohmic contact with GaN contact.
7. The method for preparing the flexible GaN-based MIS device applied to the graphene as claimed in claim 5, wherein: the GaN-based MIS device needs proper bias voltage to realize different working states under different bias voltages so as to achieve the effect of enhancing the carrier concentration.
8. The method for preparing the flexible GaN-based MIS device applied to the graphene as claimed in claim 5, wherein: in the GaN-based MIS device, GaN serves as a semiconductor to provide local carriers, an AlN sputtering layer (2) serves as a dielectric layer to realize tunneling, graphene serves as a metal electrode to provide carriers which act with the semiconductor, self-support is realized through weak van der Waals force of the graphene, and flexibility is realized based on characteristics of GaN materials and the graphene.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113471340A (en) * | 2021-05-25 | 2021-10-01 | 厦门大学 | Local surface plasmon coupling enhancement based ultra-fast micro-LED of MIS structure and preparation method thereof |
| CN113707451A (en) * | 2021-08-25 | 2021-11-26 | 中国科学院半导体研究所 | Method for preparing flexible ferromagnetic metal film based on Van der Waals epitaxy |
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2020
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| US20140353722A1 (en) * | 2013-05-31 | 2014-12-04 | Stmicroelectronics, Inc. | Graphene capped hemt device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113707451A (en) * | 2021-08-25 | 2021-11-26 | 中国科学院半导体研究所 | Method for preparing flexible ferromagnetic metal film based on Van der Waals epitaxy |
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| CN111162147B (en) | 2024-03-08 |
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