CN111148859A

CN111148859A - Method and processing system for controlling thickness of ceramic layer on substrate

Info

Publication number: CN111148859A
Application number: CN201780095089.6A
Authority: CN
Inventors: 罗兰特·拉斯尔; 托尔斯滕·布鲁诺·迪特尔; 托马斯·德皮希
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2017-09-20
Filing date: 2017-09-20
Publication date: 2020-05-12
Also published as: KR20230035447A; TWI812642B; TW201932620A; WO2019057272A1; KR20200057028A

Abstract

A method for controlling a thickness of a ceramic layer on a substrate includes providing a substrate having a front side and a back side, the substrate coated with the ceramic layer on at least one of the front side and the back side; subjecting at least a first location L1 of the ceramic layer to ionizing radiation; detecting emissions released at the at least first location L1 of the ceramic layer in response to ionizing radiation; and evaluating the thickness of the ceramic layer at the at least first location L1 based on the detected emissions. A processing system for controlling the thickness of a ceramic layer on a substrate, comprising at least one radiation element configured to emit ionizing radiation toward at least a first location L1 of the ceramic layer; at least a first sensor disposed at a first location S1 in the at least one radiating element, the at least a first sensor configured to detect emissions released at the at least a first location L1 of the ceramic layer in response to ionizing radiation; and at least one controller configured to evaluate the thickness of the ceramic layer at least at the first location L1 based on the detected emissions.

Description

Method and processing system for controlling thickness of ceramic layer on substrate

Technical Field

Embodiments of the present disclosure relate to a method and a processing system for controlling a thickness of a ceramic layer on a substrate. More particularly, embodiments of the present disclosure relate to an ionizing radiation method and an ionizing radiation system for controlling the thickness of a ceramic layer deposited on a substrate. Embodiments of the present disclosure relate to a method and a processing system for manufacturing components of electrochemical energy storage devices, such as batteries, fuel cells and batteries, and more particularly at least one component selected from the group consisting of a separator (separator), an electrolyte, a cathode and an anode.

Background

Techniques for depositing a ceramic layer on a substrate include, for example, print deposition, sputter deposition, thermal evaporation, and chemical vapor deposition. A sputter deposition process may be used to deposit a layer of material, such as a layer of conductive or insulating material, on the substrate. Ceramic coated materials can be used in several applications and in several technical fields. For example, one application is in the field of electrochemical energy storage, such as batteries, fuel cell devices, and batteries. Furthermore, substrates for spacers are often coated with Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD) ceramics, such as sputter deposition processes. Furthermore, several applications include cathodes, anodes, electrolytes and the like.

The thickness of the ceramic layer on the substrate may also be understood as the uniformity of the ceramic layer on the substrate. The thickness may often vary over the length of the substrate. This thickness variation may be susceptible to different parameters, such as deposition rate, speed of guiding the substrate from one module to another, total amount and/or orientation of the flow of reactive gases, or applied evaporation and/or plasma power, or the like.

In order to control the uniformity of the ceramic layer deposited on the substrate, several general techniques may be applied, such as uv techniques, induced current techniques or optical techniques. These techniques depend on the nature (nature) and/or properties of the substrate and ceramic layers, and may not be generalizable. For example, these techniques may not be suitable for non-transparent and/or non-reflective substrates coated with highly transparent ceramic layers.

In view of the foregoing, several methods and several systems that overcome at least some of the problems in the art are advantageous. The present disclosure addresses at least some of the problems in the art, particularly by providing methods and systems for controlling the thickness of a ceramic layer on a substrate, and particularly by providing vacuum processing systems and vacuum processing methods for fabricating at least one component of a photochemical device.

Disclosure of Invention

In view of the foregoing, a method and processing system for controlling the thickness of a ceramic layer on a substrate are provided. Further, a vacuum processing system and a vacuum processing method for manufacturing a component of an electrochemical device are provided. Other aspects, advantages, and features of the present disclosure will become apparent from the following claims, description, and drawings.

According to an aspect of the present disclosure, a method for controlling a thickness of a ceramic layer on a substrate is provided. The method includes providing a substrate having a front side and a back side. In addition, the substrate is coated with a ceramic layer on at least one of the front side and the back side. The method further includes subjecting at least the first location L1 of the ceramic layer to ionizing radiation. In addition, the method includes detecting emissions released at the at least first location L1 of the ceramic layer in response to ionizing radiation. The method further includes evaluating a thickness of the ceramic layer at the at least first location L1 based on the detected emissions.

According to other aspects of the disclosure, the method includes subjecting at least a second location L2 of the ceramic layer to ionizing radiation. In addition, the at least second position L2 is different from the at least first position L1. Furthermore, the method includes detecting emissions released at the at least second location L2 of the ceramic layer in response to ionizing radiation. The method further includes evaluating a thickness of the ceramic layer at the at least second location L2 based on the detected emissions.

According to other aspects of the disclosure, the method includes comparing the thickness at the first location L1 to the thickness at the second location. The method further includes comparing the thickness of the ceramic layer at the first location L1 with the thickness of the ceramic layer at the second location L2. In addition, the method includes adjusting the thickness of the ceramic layer at the at least first location L1 to be the thickness of the ceramic layer at the at least second location L2.

According to another aspect of the present disclosure, a processing system for controlling a thickness of a ceramic layer on a substrate is presented. The processing system comprises at least one radiation element configured to emit ionizing radiation toward at least a first location L1 of the ceramic layer. The processing system further includes at least a first sensor disposed at a first location S1 in the at least one radiating element. In addition, the at least first sensor is configured to detect emissions released at the first location L1 of the ceramic layer in response to ionizing radiation. The processing system further includes at least one controller configured to evaluate a thickness of the ceramic layer at the at least first location L1 based on the detected emissions.

According to other aspects of the disclosure, the processing system includes at least one radiation element further configured to emit ionizing radiation toward at least a second location L2 of the ceramic layer. The processing system further includes at least a second sensor disposed at a second location S2 in the at least one radiating element. In addition, the at least second sensor is configured to detect emissions released at the second location L2 of the ceramic layer in response to ionizing radiation. The processing system includes at least one controller further configured to evaluate a thickness of the ceramic layer at the at least second location L2 based on the detected emissions.

According to other aspects of the present disclosure, the processing system includes at least one controller configured to compare the thickness of the ceramic layer at the at least first location L1 with the thickness of the ceramic layer at the at least second location L2. In addition, the at least one controller is configured to adjust the thickness of the ceramic layer at the at least first location L1 to the thickness of the ceramic layer at the at least second location L2.

According to another aspect of the present disclosure, a processing system for controlling a thickness of a ceramic layer on a substrate is presented. The processing system includes at least one radiation unit, at least a first sensor, at least a second sensor, and at least one controller.

Drawings

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings are related to several embodiments of the disclosure and are described below:

FIG. 1 is a flow chart illustrating a method for controlling the thickness of a ceramic layer on a substrate including the at least first location L1 according to embodiments described herein;

FIG. 2 is a flow chart illustrating a method for controlling the thickness of a ceramic layer on a substrate including at least a first location L1 different from at least a second location L2 according to embodiments described herein;

FIG. 3 illustrates a cross-sectional view of a roll-to-roll system including a system for controlling the thickness of a ceramic layer on a substrate as described in embodiments herein;

FIG. 4 shows a schematic cross-sectional view of the control system according to FIG. 3 as described in an embodiment herein; and

fig. 5 shows a schematic cross-sectional view of the control system according to fig. 3 as described in further embodiments herein.

Detailed Description

Reference will now be made in detail to several embodiments of the disclosure, one or more examples of which are illustrated in the drawings. In the description below of the drawings, like reference numerals refer to like parts. In particular, the description is directed to differences of the individual embodiments. Each example is provided by way of illustration of the present disclosure and is not meant as a limitation of the present disclosure. Furthermore, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is contemplated that the present description includes such modifications and variations.

Before explaining several embodiments of the present disclosure in more detail, some aspects are described with respect to certain names and phrases used herein.

In the present disclosure, the term "control" as used herein is to be understood in a broad manner and may include operations applied to the thickness of a ceramic layer on a substrate. The name "control" may include names such as measurement, evaluation, adjustment, change (adaptation), equalization (equalization), homogenization (homogenization), monitoring, inspection (overlaying), comparison, correction, and the like.

As noted above, the term "thickness" should be understood broadly and may include such names as uniformity, density, width, depth, amplitude (break), diameter, homogeneity and the like. In particular, the term "thickness" may relate to the distance between the surface of the ceramic layer contacting the substrate and the opposite surface of the ceramic layer between at least two different locations on the substrate.

Further, the term "ceramic layer" as used herein is to be understood broadly and may include ceramic components. The ceramic composition of the ceramic layer may include several elements. For example, the ceramic composition may include and/or consist of two, three, four or more elements. For example, in the case of three elements constituting the ceramic composition, the ceramic composition can be taken from the following chemical formula:

A_xB_yC_Z

wherein A is selected from the group consisting of transition metals, post-transition metals, and metalloids, wherein B is selected from the group consisting of oxides, nitrides, and carbides, wherein C is selected from the group of A and B; x is the stoichiometry of A, y is the stoichiometry of B, and/or z is the stoichiometry of C.

For example, in the case of two elements constituting a ceramic composition, the ceramic composition can be taken from the following chemical formula:

A_xB_y

wherein A is selected from the group consisting of transition metals, post-transition metals, and metalloids, wherein B is selected from the group of oxides, nitrides, and carbides; x is the stoichiometric number of A and/or y is the stoichiometric number of B. The above formula can be generalized for more than three elements that make up the ceramic composition. In other embodiments, the ceramic layer may be a combination of components taken from the above formulas.

Further, the designation "ceramic layer" may include at least one non-conductive, very poorly conductive, and highly transparent layer including metallic aluminum, silicon, lead, zirconium, titanium, hafnium, lanthanum, magnesium, zinc, tin, cerium, yttrium, calcium, barium, strontium, and combinations thereof. Although silicon is often meant to be a metalloid, in the context of this disclosure, silicon should be included whenever a metal is mentioned. Aluminum may be advantageous. Generally, according to several embodiments described herein, the ceramic layer may be optimized for use in electrochemical cells containing strongly basic electrolytes by, inter alia, selecting alkali input resistant materials. For example, zirconium or titanium may be used in place of aluminum as the inorganic component forming the ceramic layer. The ceramic layer may include zirconia or titania instead of alumina. In particular embodiments, the ceramic layer may be highly transparent and non-conductive.

In other embodiments, a "ceramic layer" may include both porous and non-porous layers. The term "porous" is to be understood in a broad manner in particular and may include, for example, porous names. For example, porosity can be determined by common methods, such as, for example, by mercury intrusion porosimetry (mercury porosimetry) and/or can be calculated from the volume and density of the material assuming all pores are open pores. In the present disclosure, "porous" is, for example, a porous ceramic layer, which may be associated with open pore accessibility (accessibility). That is, the ceramic layer may be porous such that certain elements may pass through the ceramic layer. According to several embodiments described herein, the ceramic layer may advantageously be a porous layer.

According to several embodiments described herein, the thickness of the ceramic layer formed on the flexible substrate may be equal to or greater than 25nm, in particular equal to or greater than 50nm, in particular equal to or greater than 100nm, and/or equal to or less than 1000nm, in particular equal to or less than 500nm, in particular equal to or less than 150 nm. When several embodiments are implemented, a high energy density of the electrochemical energy storage device can be achieved.

During deposition of ceramic materials, for example by evaporation, in particular by reactive evaporation, the ceramic layer may not be formed completely stoichiometrically, or non-stoichiometrically. In the context of the present disclosure, "stoichiometry" is, for example, the stoichiometry of a ceramic layer, which is understood to be the calculation of the relative amounts of reactants and products in a chemical reaction. Thus, "non-stoichiometric" or "incompletely stoichiometric" may mean that the product does not include all of the reactants. In the case of alumina as the material of the coating layer, the complete stoichiometric reaction may be 4Al +3O₂＝2Al₂O₃. If the alumina is not formed in full stoichiometry or non-stoichiometry, the reaction product may be, for example, Al₂O_2.5. Thus, having xAlO not equal to 1.5_xAny of the compositions of (a) may be considered non-stoichiometric or not formed in full stoichiometry. Unbound excess atoms that can react with elements of the electrochemical energy storage device may be present in the non-stoichiometric ceramic layer, particularly during charging and/or discharging of the electrochemical energy storage device. In the case of a lithium ion battery, for example, during charging and/or discharging of the lithium ion battery, unbound excess atoms may react with lithium ions passing through the ceramic layer. In the example of alumina as the material of the ceramic layer, the unbound excess atoms may be aluminum (Al).

Further, the "substrate" as described herein is to be understood in a broad manner and may include substrates typically used in at least one component of an electrochemical device, such as a separator, an electrolyte, a cathode, and an anode. In particular, the term "substrate" as used herein shall include in particular flexible substrates, electrically insulating substrates, non-conductive substrates, transparent substrates, non-transparent substrates, reflective substrates and non-reflective substrates.

In the present disclosure, the term "transparent" may be understood in particular as a relative transparency, which may be a ratio and/or quotient of the transparency of the substrate and the transparency of the ceramic layer arranged on the substrate (quotient). A "non-transparent" substrate may comprise a substrate in which the ratio of relative transparency may be greater than 1, in particular greater than 5. A "transparent substrate" according to the present disclosure may include a substrate that is not non-transparent as described herein. Furthermore, transparency can be measured by common methods using wavelengths, which can range from Ultraviolet (UV) to Infrared (IR).

Furthermore, the term "reflection" may be understood in particular as a relative reflectivity, which may be a ratio and/or quotient of the reflectivity of the substrate and the reflectivity of a ceramic layer arranged on the substrate. A "non-reflective substrate" according to the present disclosure may comprise a substrate having a relative reflectivity ratio that may be greater than 1, in particular greater than 5. A "reflective substrate" may include a substrate that is not a "non-reflective substrate" as described herein. Again, the reflectivity can be measured in a similar manner.

In certain embodiments, the substrate is optionally non-transparent and non-reflective.

In other particular embodiments, the "substrate" may advantageously be free of at least one of the elements a and B described herein.

According to several embodiments described herein, the methods, apparatus and systems described herein may be used in the context of, or in applications for, manufacturing electrochemical devices and/or components of electrochemical devices, such as separators, electrolytes, cathodes and anodes.

As used herein, an "electrochemical energy device" is understood to be an electrochemical energy reservoir that may or may not be exchangeable. The designations "battery" and "battery" do not differ in this application. Furthermore, the names "electrochemical energy device" and "electrochemical cell" may be used synonymously hereinafter. Examples of electrochemical cells also include capacitors. In several embodiments described herein, an electrochemical cell is understood to be the lowest functional unit of an energy storage device. In industrial practice, multiple electrochemical cells may be connected, typically in series or in parallel, to increase the overall energy capacity of the reservoir. In this context, reference may be made to a plurality of electrochemical cells. An industrially designed cell may thus have a single electrochemical cell, or a plurality of electrochemical cells connected in parallel or in series.

In the case of electrochemical reactions of charging and/or discharging, the high porosity of the ceramic layer and/or the substrate may increase the ionic conductivity. In the case of a lithium ion battery, the high porosity of the ceramic layer and/or substrate may be advantageous to facilitate the cyclic migration of lithium ions through pores in the ceramic layer and/or substrate between the two electrodes.

In other embodiments, the substrate may be a substrate suitable for one selected from the group consisting of a separator, an electrolyte, a cathode, and an anode.

In the case of spacers, the substrate may be made of microporous polyethylene (microporosity polyethylene), polypropylene (polypropylene) and/or polyolefin (polyolefin) and/or a laminate of the above.

In other embodiments of the lithium ion battery, the electrically insulating separator optionally comprises a substrate, which may have a polymeric material selected from the group consisting of: polyacrylonitrile (polyacrylonitrile), polyester (polyester), polyamide (polyamide), polyimide (polyimide), polyolefin (polyofin), polytetrafluoroethylene (polytetrafluoroethylene), carboxymethylcellulose (carbomethylcellulose), polyacrylic acid (polyacrylic acid), polyethylene (polyethylene), polyethylene terephthalate (polyethylene terephthalate), polyphenylene ether (polyphenylene ether), polyvinyl chloride (polyvinyl chloride), polyvinylidene chloride (polyvinylidene chloride), polyvinylidene fluoride (polyvinylidene fluoride), polyvinylidene fluoride-hexafluoropropylene copolymer (polyvinyl fluoride-co-polystyrene), polylactic acid (polylactic acid), polypropylene (polybutylene), polybutylene-co-acrylonitrile (polybutylene), polybutylene-acrylonitrile (polybutylene-co-acrylonitrile), polybutylene-styrene (polybutylene), polybutylene-co-acrylonitrile (polybutylene), polybutylene-styrene (polybutylene), polybutylene-co-acrylonitrile (polybutylene), polybutylene-styrene (polybutylene), polybutylene-acrylonitrile (polybutylene), polybutylene-styrene (polybutylene) and polybutylene-styrene (polybutylene) copolymer (polybutylene) and polybutylene-acrylonitrile (polybutylene) copolymer (polybutylene) and (polybutylene), Polyoxymethylene (polyoxymethylene), polysulfone (polysulfone), styrene-acrylonitrile (styrene-acrylonitrile), styrene-butadiene rubber (styrene-butadiene rubber), ethylene vinyl acetate (ethylene vinyl acetate), styrene-maleic anhydride (styrene maleic anhydride), and combinations thereof. Any other polymeric material that is stable in the severe reducing conditions found in, for example, lithium-based electrochemical cells, may also be used. According to several embodiments described herein, the separator may be optimized for use in electrochemical cells containing strongly basic electrolytes by, inter alia, selecting a material that is resistant to alkali input. For example, the separator may include a polyolefin or polyacrylonitrile instead of polyester.

In several embodiments described herein, the polymeric material can have a high melting point, for example, greater than 200 ℃. Separators comprising polymeric materials having high melting points may be useful in electrochemical cells having fast charge cycles.

In the case of a cathode, the flexible substrate may be made of and/or include aluminum. In this case, the cathode layer may be formed on the flexible substrate. The ceramic layer may be formed on the cathode layer. For example, the flexible substrate may have a thickness of 5 to 12 μm in the case of a cathode and/or the cathode layer may have a thickness of up to 100 μm. The flexible substrate may additionally or alternatively be or include a polymeric material as described herein, such as polyester, with an aluminum layer deposited on the flexible substrate. The polymer substrate may be thinner than, for example, an aluminum substrate and/or a deposited aluminum layer. The deposited aluminum layer may have a thickness of about 0.5 μm to about 1 μm. When several embodiments are implemented, the thickness of the cathode may be reduced.

In the case of an anode, the flexible substrate may be made of and/or include copper. In this case, the anode layer may be formed on the flexible substrate. The ceramic layer may be formed on the anode layer. For example, the flexible substrate may have a thickness of 5 to 12 μm in the case of an anode and/or the anode layer may have a thickness of up to 100 μm. The flexible substrate may additionally or alternatively be or include a polymeric material as described herein, such as polyester, with a copper layer deposited on the flexible substrate. The polymer substrate may be thinner than, for example, a copper substrate and/or a deposited copper layer. The deposited copper layer may have a thickness of about 0.5 μm to about 1 μm. When several embodiments are implemented, the thickness of the anode can be reduced.

In the particular case of a lithium ion battery, the anode may include a substrate, contained within carbon graphite (LiC)₆) The lithium layer in the atomic layer of the crystal structure of (1) may be formed on the substrate. Further, the cathode may include a substrate, lithium manganese oxide (LiMnO)₄) Or lithium cobalt oxide (LiCoO) may be formed on the substrate.

In the present disclosure, "experience" as used herein is to be understood in a broad manner and may include, for example, the names of application, exposure, and also include, for example, representations of "ceramic layer experiences" and the like. In the context of the present disclosure, "subjecting the ceramic layer" may be performed by any device configured to subject the ceramic layer to ionizing radiation.

Furthermore, the name "position" should be understood in a broad manner and may mean a position that may be a point or an area. The name "location" may include, for example, the name of a location (location), surface, region (region), region, site (site), space, place (place), and the like. In particular, these designations are to be understood as being equivalent to one another.

In the present disclosure, the name "ionizing radiation" is understood to be radiation carrying sufficient energy to eject at least one electron from an atom or molecule. Atoms and molecules that are subjected to suitable ionizing radiation can be understood as being excited and/or ionized. In particular, the name "ionizing radiation" may include at least one of gamma (gamma) rays, X-rays, and short wavelength radiation. In certain embodiments, ionizing radiation may be selected to excite and/or ionize at least one of elements a and B as described herein. In other embodiments, although the substrate may be non-transparent and/or non-reflective, "ionizing radiation" should be understood to mean, inter alia, causing the transparent ceramic layer to be excited and/or ionized.

Thus, the name "emission" may be understood to refer to the energy released by ionized and/or excited atoms or molecules in response to "ionizing radiation" as described herein. Furthermore, energy may be released in the form of photons and/or electrons. In particular, the name "emissions" may include X-ray fluorescence (XRF) emissions.

Moreover, the term "evaluating" is to be understood broadly and may include, for example, measuring, estimating, calculating, evaluating, counting, determining, and the like. The act of "evaluating thickness" may be performed by any device equipped to measure the thickness of a ceramic layer on a substrate.

Fig. 1 is a flow chart illustrating a method for controlling a thickness of a ceramic layer on a substrate according to embodiments described herein. As exemplarily shown in fig. 1, a method 100 for controlling a thickness of a ceramic layer on a substrate includes providing 101 a substrate having a front side and a back side. Furthermore, the substrate may be coated with a ceramic layer on and/or over at least one of the front side and the back side. Furthermore, the substrate may be coated with a ceramic layer on and/or over at least one of the front side and the back side. Further, the method 100 may include subjecting 102 at least a first location L1 of the ceramic layer to ionizing radiation. The method 100 further includes detecting 103 emissions released at the at least first location L1 of the ceramic layer in response to ionizing radiation. Further, the method 100 comprises evaluating 104 a thickness of the ceramic layer at this at least first location L1 based on the detected emissions.

By providing a method for controlling the thickness of a ceramic layer on a substrate, the efficiency of the method for depositing a ceramic layer on a substrate may be increased. In particular, methods as described herein may advantageously provide feedback of the thickness of a ceramic layer at a particular location on a substrate. The methods described herein may be advantageous, particularly during the manufacture of at least one component of an electrochemical device, such as a separator, an electrolyte, a cathode, and an anode. In particular, the methods described herein may facilitate controlling the quality of in-situ (in-situ) fabricated components, such as the thickness and/or uniformity of ceramic layers. Further, by providing the methods described herein, subsequent operations for manufacturing at least one component in the electrochemical industry may be increased.

More particularly, by providing the methods described herein, the thickness of the ceramic layer can be advantageously controlled, particularly in the case of variable deposition rates and/or variable evaporation rates during deposition of the ceramic layer on the substrate. The term "variable" can be understood in particular as a deposition rate and/or an evaporation rate that changes over time and/or a deposition area. Further, the name "variable" may include, for example, names that are variable (initial), changed, and the like. For example, during deposition of ceramic materials, particularly by evaporation of ceramic materials, the evaporated material may clog the crucible, and the deposition and/or evaporation rate may instead vary.

In other embodiments of the present disclosure, the method may further comprise providing a predetermined thickness of the ceramic layer to be deposited on and/or over the substrate. In particular, in embodiments of the present disclosure, the predetermined thickness may be a thickness of a ceramic layer to be deposited during deposition. In this case, the methods of the present disclosure may be understood as in-situ control of the thickness of a ceramic layer deposited on and/or over a substrate. The expression "in-situ control" is understood to mean a preliminary quality control during deposition. The methods described herein may advantageously enhance the process of manufacturing at least one component of an electrochemical device by providing initial and/or in-situ control of the thickness of the ceramic layer. In other embodiments, the predetermined thickness may be the thickness of a ceramic layer of an end product that may be subject to final quality control. In this case, the methods described herein may advantageously provide quality control of the product to be manufactured, such as a component of an electrochemical device.

According to several embodiments described herein, the predetermined thickness of the ceramic layer may be equal to or greater than 25nm, in particular equal to or greater than 50nm, in particular equal to or greater than 100nm, and/or equal to or less than 1000nm, in particular equal to or less than 500nm, in particular equal to or less than 150 nm. Further, the predetermined thickness may depend on the nature of the substrate on which the ceramic layer is deposited. In the case of a substrate for a spacer, the predetermined thickness of the ceramic layer described herein may be substantially equal to 100 nm. In the case of a substrate for a cathode and/or anode, the predetermined thickness of the ceramic layer as described herein may be substantially equal to 50 nm. The term "substantially" is understood to encompass deviations from the predetermined thickness, for example deviations from the exact predetermined thickness of up to 10%, in particular up to 5%.

In other embodiments, the thickness of the ceramic layer to be achieved may include tolerances. In particular embodiments, the thickness may include tolerances, which may be tolerances of a desired ceramic layer to be deposited on and/or over a substrate during deposition. This tolerance can be understood as an "in-situ tolerance". In other embodiments, the thickness may include tolerances, which may be tolerances of a desired ceramic layer deposited on and/or over a substrate in a product. Such products are for example components of electrochemical devices.

The tolerance of the thickness of the ceramic layer may depend on various parameters, such as the nature of the substrate on which the ceramic layer is deposited. In particular embodiments, the tolerance may range from 5% to 10%.

Additionally, the method may include comparing the thickness of the ceramic layer at the first location L1 to a predetermined thickness to verify compliance with manufacturing limitations (not shown in fig. 1) in view of the tolerances described herein. The term "in view of" is to be understood here in particular as the name "in which (within)", or as the name "plus or minus". That is, the tolerance described herein can be considered as a range having a predetermined thickness as an average value.

Fig. 2 shows a flowchart of an embodiment of the method described with reference to fig. 1, further including at least a second location L2 of the ceramic layer on the substrate. As exemplarily shown in fig. 2, the method 200 further includes subjecting 201 at least a second location L2 of the ceramic layer to ionizing radiation. Furthermore, the at least second position L2 may in particular be different from the at least first position L1. By providing the second location L2 on the ceramic layer, the method 200 described herein may advantageously include different locations and selected larger areas on the ceramic layer. Furthermore, providing the second location L2 of the ceramic layer may facilitate control of the thickness of the ceramic layer over and/or on substantially the entire length of the substrate. In this case, the term "substantially" may in particular be understood to encompass deviations of up to 10%, in particular deviations of up to 5%, from the entire length of the substrate. The second location L2 of the ceramic layer may advantageously achieve uniformity during deposition of the ceramic layer.

In other embodiments (not shown in fig. 2), the method of the present disclosure may include three or more different positions from each other. The advantages described herein may advantageously provide at least those advantages described herein, and may even improve those advantages to some extent.

As shown in fig. 2, the method 200 may include detecting 202 emissions at the at least second location L2 of the ceramic layer in response to ionizing radiation. Detection 103 and detection 202 may be performed simultaneously or at different points in time. The method 200 may further include evaluating 203 a thickness of the ceramic layer at the at least second location L2. In particular, the evaluation 104 and the evaluation 203 may be performed simultaneously or at different points in time.

In other embodiments that may be combined with any of the embodiments described herein, the method 200 may include comparing 204 a thickness at the at least first location L1 of the ceramic layer and a thickness at the at least second location L2 of the ceramic layer. Furthermore, the method 200 may include adjusting 205 the thickness of the ceramic layer at the at least first location L1 to the thickness of the ceramic layer at the at least second location L2.

The term "adjusting" described herein is to be understood in particular as "equalizing" and also as "homogenizing". That is, after the adjustment 205, the thickness of the ceramic layer at this at least first location L1 may advantageously correspond to the thickness of the ceramic layer at this at least second location L2.

Further, at least one of experience 102 and experience 201, detection 103 and detection 202, and a combination of evaluation 104 and evaluation 203 may be performed simultaneously or at different points in time.

By providing a method that may include comparing 204 and adjusting 205 as described herein, deposition of a ceramic layer on a substrate may be increased. Furthermore, reproducibility and reproducibility of the deposition of the ceramic layer on the substrate can be ensured. Thus, the methods of the embodiments described herein may improve the quality of components of an electrochemical device as compared to conventional methods for depositing ceramic layers on a substrate.

More particularly, by providing the methods described herein, the thickness of the ceramic layer can be advantageously controlled, particularly in cases where the deposition rate and/or evaporation rate is non-fixed during deposition of the ceramic layer on the substrate. Even more particularly, the methods described herein can condition a ceramic layer deposited on a substrate to form a ceramic layer having a constant thickness on and/or over substantially the entire substrate. In this case, the term "substantially" may in particular be understood to encompass deviations from the entire length of the substrate of up to 10%, in particular up to 5%. By forming a ceramic layer having a constant thickness, the methods described herein may further increase the uniformity of the ceramic layer on and/or over the substrate.

According to further embodiments, which can be combined with any of the embodiments described herein, the method can include adjusting a thickness of the ceramic layer in a region of the ceramic layer to be at least one of a thickness of the ceramic layer at the at least first location L1 and the at least second location L2 (not shown in fig. 2). The term "region" as used herein is to be understood in particular as meaning at least a third position of the ceramic layer. Further, the term "adjust" should be understood as described herein, i.e., balance, "make uniform," and the like. In those particular embodiments, this method may provide at least the advantages as described herein.

According to other embodiments (not shown in fig. 2), the method may include providing the predetermined thickness in view of tolerances. In addition, the method may include comparing the thickness of the ceramic layer at the at least first location L1 to a predetermined thickness in view of tolerances. Furthermore, the method may include comparing the thickness of the ceramic layer at the at least second location L2 with a predetermined thickness in view of tolerances.

In a particular embodiment, the method may include adjusting the thickness of the ceramic layer according to at least one of the following conditions (1) to (3):

(1) in view of tolerances, one of the thickness of the ceramic layer evaluated at the at least first location L1 and the thickness of the ceramic layer evaluated at the at least second location L2 is within a predetermined thickness, and in view of tolerances, the other of the thickness of the ceramic layer evaluated at the at least first location L1 and the thickness of the ceramic layer evaluated at the at least second location L2 is outside the predetermined thickness:

adjusting the thickness outside the predetermined thickness in view of the tolerance, in particular adjusting the value included in the predetermined thickness in view of the tolerance;

(2) in view of tolerances, the thickness of the ceramic layer at the at least first location L1 and the thickness of the ceramic layer at the at least second location L2 are both within a predetermined thickness:

(2a) no adjustment is carried out;

or (2b) determining which of the thickness of the ceramic layer evaluated at the at least first location L1 and the thickness of the ceramic layer evaluated at the at least second location L2 is closer to the predetermined thickness and the other is further from the predetermined thickness;

adjusting the thickness farther than the predetermined thickness to a thickness closer to the predetermined thickness;

(3) in view of tolerances, the thickness of the ceramic layer evaluated at the at least first location L1 and the thickness of the ceramic layer evaluated at the at least second location L2 are both outside the predetermined thickness:

adjusting in view of tolerances until at least one of the thickness of the evaluated ceramic layer at the at least first location L1 and the thickness of the evaluated ceramic layer at the at least second location L2 is within a predetermined thickness;

the adjustment is more selectively performed according to (1) or (2).

In other embodiments (not shown in fig. 2), the method may include three or more locations of the ceramic layer on the substrate.

According to other embodiments, the method may further comprise providing a substrate having a front side and a back side. In addition, the method may include forming a ceramic layer on at least one of the front side and the back side of the substrate (not shown in fig. 2). In particular, the ceramic layer may be formed by any general method, and more particularly by reactive evaporation, such as PVD, CVD and the like.

In other specific embodiments, the ceramic layer may be formed from at least a first forming position F1 and at least a second forming position F2 (not shown in fig. 2). The at least first formation position F1 may in particular correspond to the at least first position L1. The at least second forming position F2 may particularly correspond to the at least second position L2. In particular embodiments, the at least first forming position F1 may particularly correspond to the at least first position L1, and the at least second forming position F2 may particularly correspond to the at least second position L2.

In the present disclosure, the corresponding position may be construed as corresponding in at least one dimension direction, for example, the flexible substrate and/or the ceramic layer. This corresponding location is, for example, a formation location, corresponding to a location towards which ionizing radiation may be directed. In particular, the first forming position F1 may correspond to a first position L1 in the length direction of the substrate, i.e., along the transport direction of the substrate, wherein the first forming position F1 and the first position L1 are aligned with each other along the transport direction and/or spaced apart from each other along the length direction. Further, the first forming position F1 may correspond to a first position L1 in the width direction of the substrate, i.e., perpendicular to the conveyance direction of the substrate, wherein the first forming position F1 and the first position L1 are arranged with the same width. This same may also apply to the second forming position F2 and the second position L2 and any other corresponding positions, respectively.

Fig. 3 depicts a schematic of a roll-to-roll system for manufacturing at least one component of an electrochemical device. As exemplarily shown in fig. 3, the roll-to-roll system 300 may include a loading/unloading chamber 301. The load/unload chamber 301 may be configured to load the flexible substrate 302 into the roll-to-roll system 300 and/or unload the flexible substrate 302 from the roll-to-roll system 300. According to several embodiments described herein, the load/unload chamber may be maintained under vacuum during processing of the flexible substrate 302. A vacuum device 303 may be provided to evacuate the load/unload chamber 301, the vacuum device 303 being, for example, a vacuum pump.

According to several embodiments described herein, the load/unload chamber 301 may include an unwind module 304 and/or a rewind module 305. The unwinding module 304 may include an unwinding roller for unwinding the flexible substrate 302. During processing, the flexible substrate 302 may be unwound (represented by arrow 323) and/or guided to the coating drum 307 by one or more guide rollers 306. After processing, the flexible substrate 302 may be wound (arrow 324) onto a rewind roll in the rewind module 305.

Further, the load/unload chamber 301 may include a tension module 308, such as including one or more tension rollers. The load/unload chamber 301 may also or alternatively include a pivot device 319, such as a pivot arm, for example. The pivot device 319 may be fitted to be movable relative to the rewind module 305.

According to several embodiments described herein, the unwind module 304, the rewind module 305, the guide roller 306, the pivot device 319, and the tension module 308 may be part of a substrate transport mechanism and/or roller assembly.

According to several embodiments described herein, the roll-to-roll system 300 may include an evaporation chamber 309. The evaporation chamber 309 may include a deposition module 310. The evaporation chamber 309 may be evacuated by the vacuum apparatus 303, and the vacuum apparatus 303 may also be used to evacuate the load/unload chamber 301. The evaporation chamber 309 may additionally or alternatively have a vacuum device, which may also be used to evacuate the load/unload chamber 301 separate from the vacuum device 303.

As exemplarily shown in fig. 3, the deposition module 310 may include an evaporation apparatus 311. An evaporation device 311 may be equipped to evaporate the metal. According to several embodiments described herein, the evaporation device may comprise one or more evaporation pans. The evaporation device may further comprise one or more wires, which are wired into the evaporation device. In particular, there may be one line for each evaporation pan. The one or more wires may comprise and/or be made of a material to be evaporated. In particular, the one or more wires may provide the material to be evaporated.

According to several embodiments described herein, the material source may include one or more electrode beam sources. The one or more electrode beam sources may provide one or more electrode beams to evaporate material to be evaporated. According to several embodiments described herein, the evaporation device 311 may be one or more induction heating crucibles. An induction heating crucible can be exemplified as an assembly to vaporize metal by Radio Frequency (RF) induction heating, particularly by Medium Frequency (MF) induction heating, in a vacuum environment. Further, the metal may be provided in an interchangeable crucible, such as, for example, in one or more graphite vessels. The interchangeable crucible can include an insulating material surrounding the crucible. One or more induction coils may be wound around the crucible and the insulation. According to several embodiments described herein, the one or more induction coils may be water cooled. Where an interchangeable crucible is used, there is no need to provide a wire into the evaporation apparatus 311. The interchangeable crucibles may be pre-loaded with metal and may be replaced or replenished periodically. By providing the metal in batches, the total amount of evaporated metal can be advantageously controlled.

In contrast to the evaporation methods that typically use a resistance heated crucible to evaporate the metal, the use of an induction heated crucible provides a heating process that is generated inside the crucible and not provided by an external source via heat conduction. Induction heating crucibles have the advantage that all the walls of the crucible are heated very quickly and uniformly. The evaporation temperature of the metal can be more closely controlled than a typical resistance heating crucible. When an induction heating crucible is used, the crucible may be higher than the evaporation temperature of the metal without heating. When several embodiments are implemented, more controlled and efficient metal evaporation can be provided to make the ceramic layer formed on the flexible substrate more homogeneous. By reducing the likelihood of sputtering of the evaporated metal, precise control of the crucible temperature can also avoid/reduce pin hole and via defects in the ceramic layer. Pin hole and through hole defects in the separator may lead to short circuits in the electrochemical cell.

According to several embodiments described herein, the induction heating crucible may be surrounded by one or more induction coils (not shown in the figures), for example. The induction coil may be an integral part of the induction heating crucible. Further, the induction coil and the induction heating crucible may be provided as separate parts. Separately providing an induction heating crucible and an induction coil can provide for easy maintenance of the evaporation apparatus.

A power supply 312 (seen in fig. 4) may be provided in accordance with several embodiments described herein. The power source 312 may be connected to the induction coil. The power supply may be an Alternating Current (AC) power supply that may be configured to provide power having low voltage and high current and high frequency. Further, the reaction power may be increased by including a resonance coil, for example. According to several embodiments described herein, the induction heating crucible can be exemplified as comprising a ferromagnetic material in addition to or instead of a conductive material. The magnetic material may be exemplified as an improved induction heating process and may provide better control of the evaporation temperature of the metal.

According to several embodiments described herein, the coating drum 307 of the roll-to-roll system 300 may separate the loading/unloading chamber 301 from the evaporation chamber 309. A coating drum 307 may be assembled to guide the flexible substrate 302 into an evaporation chamber 309. The coating drum 307 may be arranged in the processing system such that the flexible substrate 302 may pass over the evaporation device 311. According to several embodiments described herein, the coating drum 307 may be cooled.

The deposition module 310 may include a plasma source 313. A plasma source 313 is provided to generate a plasma 321 between the evaporation device 311 and the coating drum 307. Plasma source 313 may be exemplified by an electron beam device configured to ignite plasma 321 with an electron beam. According to other embodiments described herein, the plasma source may be a hollow anode deposition plasma source. By further reducing the likelihood of evaporated metal sputtering, the plasma 321 may help avoid/reduce pin holes and through holes in the porous coating on the substrate. The plasma may also further excite particles of the evaporated metal. According to several embodiments described herein, the plasma can increase the density and uniformity of porous coatings deposited on flexible substrates.

According to several embodiments described herein, the deposition module 310 may include a gas supply to supply a process gas. The gas supply may include a gas directing device 314. A gas guiding device 314 may be arranged for controllably guiding process gases into the deposition module 310 and/or the evaporation chamber 309. The gas guiding device may, for example, comprise a nozzle and a supply pipe connected to, for example, a process gas supply for providing process gas to the deposition module 310 and/or the evaporation chamber 309.

The process gas may be a reactive gas. In particular, the process gas may be a reaction gas that reacts with the metal evaporated by the evaporation apparatus 311. For example, the process gas can be and/or include oxygen, ozone, argon, and combinations thereof.

For the case where oxygen is included in the process gas, the oxygen gas may, for example, react with the evaporated metal to form a ceramic layer on the flexible substrate 302. The components of the electrochemical energy storage device, such as the separator or separator membrane, the cathode, and the anode, can comprise AlOy. A metal such as aluminum may be evaporated by an induction heated crucible and oxygen may be provided to the evaporated metal via a gas guiding device.

According to several embodiments described herein, the roll-to-roll system 300 may include a gas assembly 316. The gas module 316 may be configured to supply an oxidizing gas, such as oxygen. According to several embodiments described herein, the roll-to-roll system 300 may include a heating assembly (not shown). A heating assembly may be assembled to increase the temperature of at least one of the supplied oxidizing gas, the flexible substrate 302, and the ceramic layer.

According to several embodiments described herein, the roll-to-roll system 300 may include a suction device 317. The suction device 317 may be provided to suck an excessive amount of the oxidizing gas, i.e., the oxidizing gas that is not used to oxidize the ceramic layer. The suction device 317 may be disposed opposite the gas assembly 316 relative to the flexible substrate 302. Thus, the process gas supplied by the gas assembly 316 may be provided to the ceramic layer, travel through the flexible substrate 302, and be extracted by the extraction device 317, which may advantageously avoid contamination of the roll-to-roll system 300.

According to several embodiments described herein, the roll-to-roll system 300 may include a processing system 318 (shown in FIGS. 3-5). The processing system 318 may be adapted to obtain monitoring signals including information of at least one of thickness and/or uniformity and composition of a ceramic layer deposited on a substrate.

FIG. 4 shows an enlarged view 400 of the roll-to-roll system 300 according to FIG. 3, including the processing system 318 for controlling the thickness of the ceramic layer on the substrate. As exemplarily shown in fig. 4, the processing system 318 includes at least one radiation unit 401 configured to emit ionizing radiation as described herein. The ionizing radiation is directed towards at least a first location L1 of the ceramic layer. Furthermore, the processing system 318 comprises at least a first sensor 402 arranged at a first position S1 in this at least one radiation element 401. Further, the at least first sensor 402 is configured to detect emissions released at the at least first location L1 of the ceramic layer in response to ionizing radiation. The processing system 318 further includes at least one controller 403 configured to evaluate the thickness of the ceramic layer at the at least first location L1 based on the detected emissions.

In other embodiments, this at least first sensor may be arranged anywhere in the radiation unit. In a particular embodiment, the at least first sensor may be arranged in a plane parallel to a plane defined by the ceramic layer. In particular, the at least first sensor may be arranged in a plane facing a surface of the substrate without ceramic material. More particularly, the at least first sensor may be arranged to face the at least first position L1.

In a particular embodiment, the processing system depicted in fig. 4 is configured to operate the method for controlling the thickness of a ceramic layer on a substrate according to fig. 1.

FIG. 5 depicts a schematic diagram of a processing system according to the embodiment of FIG. 4; the at least one radiating element 401 may be further configured to emit ionizing radiation toward at least a second location L2 of the ceramic layer as described herein. In particular, this at least second position L2 of the ceramic layer can advantageously be different from this at least first position L1 of the ceramic layer. The processing system 318 may further include at least a second sensor 404 disposed at a second location S2 in the at least one radiating element 401. In particular, the second position S2 may advantageously be different from the first position S1. In addition, the at least second sensor 404 may be configured to detect emissions released at the at least second location L2 of the ceramic layer in response to ionizing radiation. Furthermore, the at least one controller 403 may be further configured to evaluate the thickness of the ceramic layer at the at least second location L2 based on the detected emissions.

In other embodiments, this at least second sensor may be arranged anywhere in the radiation unit. In a particular embodiment, the at least second sensor may be arranged in a plane parallel to the plane defined by the ceramic layer. In particular, the at least second sensor may be arranged in a plane facing a surface of the substrate without ceramic material. More particularly, the at least second sensor may be arranged to face the at least second position L2. In a particular embodiment, the at least a first sensor may be arranged to face the at least a first position L1 and the at least a second sensor may be arranged to face the at least a second position L2.

In other embodiments, the at least one controller 403 may be configured to compare the thickness of the ceramic layer at the at least first location L1 with the thickness of the ceramic layer at the at least second location L2. In certain embodiments, the at least one controller may be configured to compare at least one of the thickness of the ceramic layer at the at least first location L1 and the thickness of the ceramic layer at the at least second location L2 to a predetermined thickness in view of the tolerances described herein.

Further, the at least one controller may be configured to adjust the thickness of the ceramic layer at the at least first location L1 to the thickness of the ceramic layer at the at least second location L2.

In other embodiments, the at least one controller may advantageously be configured to adjust the thickness of the ceramic layer in a region of the ceramic layer to be at least one of the thickness of the ceramic layer at the at least first location L1 and the thickness of the ceramic layer at the at least second location L2, as described herein.

In a specific embodiment, the processing system shown in fig. 5 is assembled to operate the method for controlling the thickness of a ceramic layer on a substrate according to fig. 2.

In other embodiments, the controller 403 may be connected to at least one of the deposition module 310, the gas guiding device 314, the plasma source 313, and the power source 312. According to several embodiments described herein, the controller 403 may be configured to adjust at least one of the power supplied to the deposition module 310, the power supplied to the plasma source 313, and/or the total amount of process gas and/or the orientation of the flow of process gas that the gas guiding device 314 directs into the deposition module 310.

According to several embodiments described herein, the gas guiding device 314 may be arranged to provide a flow of process gas in a direction approximately parallel to the evaporation direction 322 of the metal. According to several embodiments described herein, the orientation of the gas flow provided by the gas guiding device may depend on at least one of the uniformity and composition of the ceramic layer. When several embodiments are implemented, a more efficient reaction between the reactive gas and the evaporated metal is ensured to form the ceramic layer. Arranging the gas guiding means 314 to guide the reaction gas in a direction essentially parallel to the evaporation direction 322 of the metal from the evaporation means 311 may also help to better control the coating process by enabling a more accurate control of the total amount of process gas that reacts with the evaporated metal.

According to several embodiments described herein, the plasma 321 may be directed in a direction substantially perpendicular to the evaporation direction 322 of the metal. When several embodiments are implemented, sputtering of evaporated metal can be avoided and/or pin hole defects of the ceramic layer can be reduced.

The methods and processing systems described herein may be performed and operated by hardware components, computers programmed by appropriate software, and any combination of the two, or any other method, respectively.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

In particular, this written description uses examples to disclose the disclosure, including the best mode, and also to enable practice of the described subject matter, including making and using any devices or systems and performing any incorporated methods. While several specific embodiments have been disclosed in the foregoing, the non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and other examples are within the scope of the claims if the claims have structural elements that do not differ from the literal language of the claims, or if the claims include equivalent structural elements with insubstantial differences from the literal languages of the claims.

Claims

1. A method (100, 200) for controlling a thickness of a ceramic layer on a substrate, comprising:

providing (101) a substrate having a front side and a back side, the substrate being coated with the ceramic layer on at least one of the front side and the back side;

subjecting (102) at least a first location (L1) of the ceramic layer to ionizing radiation;

detecting (103) emissions released at said at least first location (L1) of said ceramic layer in response to said ionizing radiation; and

-evaluating (104) the thickness of the ceramic layer at the at least first location (L1) based on the detected emissions.

2. The method (200) for controlling the thickness of a ceramic layer on a substrate according to claim 1, the method comprising:

subjecting (201) at least a second location (L2) of the ceramic layer to ionizing radiation, the at least second location (L2) being different from the at least first location (L1);

detecting (202) emissions released at the at least second location (L2) of the ceramic layer in response to the ionizing radiation; and

-evaluating (203) the thickness of the ceramic layer at the at least second location (L2).

3. The method (200) of claim 2, further comprising:

comparing (204) the thickness at the at least first position (L1) and the thickness at the at least second position (L2); and

-adjusting (205) the thickness of the ceramic layer in the at least first position (L1) to the thickness of the ceramic layer in the at least second position (L2).

4. The method (100) for controlling the thickness of a ceramic layer on a substrate according to claim 3, the method further comprising adjusting the thickness of the ceramic layer in a region corresponding to at least one of the thickness of the ceramic layer at the at least first location (L1) and the thickness of the ceramic layer at the at least second location (L2).

5. The method (100, 200) for controlling the thickness of a ceramic layer on a substrate according to any of claims 1-4, the providing of the substrate comprising:

providing a substrate having a front side and a back side; and

and forming a ceramic layer on the substrate.

6. The method (100) for controlling the thickness of a ceramic layer on a substrate according to any of claims 1-5, wherein the ceramic layer is formed by reactive evaporation.

7. The method (200) for controlling the thickness of a ceramic layer on a substrate according to any of claims 1-6, wherein the ceramic layer is formed by at least a first formation location (F1) and a second formation location (F2), the first formation location (F1) corresponding to the at least first location (L1) and the second formation location (F2) of the ceramic layer corresponding to the at least second location (L2) of the ceramic layer.

8. The method (100, 200) for controlling the thickness of a ceramic layer on a substrate according to any of claims 1-7, wherein the ceramic layer is one of the ceramic compositions selected from the following formulae:

A_xB_y

wherein A is selected from the group consisting of transition metals, post-transition metals, and metalloids;

wherein B is selected from the group of oxides, nitrides and carbides; and

x is the stoichiometric number of A and y is the stoichiometric number of B.

9. The method (100, 200) for controlling the thickness of a ceramic layer on a substrate according to claim 8, wherein the ionizing radiation is configured to ionize at least one of a and B.

10. A processing system (318) for controlling a thickness of a ceramic layer on a substrate, comprising:

at least one radiation element (401) fitted to emit ionizing radiation towards at least a first location (L1) of the ceramic layer;

at least a first sensor (402) arranged at a first position (S1) in the at least one radiating element (401); said at least a first sensor (402) is arranged to detect emissions released at said at least a first location (L1) of said ceramic layer in response to said ionizing radiation; and

at least one controller (403) equipped to evaluate the thickness of the ceramic layer in said at least first position (L1) based on the detected emissions.

11. The processing system (318) for controlling a thickness of a ceramic layer on a substrate of claim 10, further comprising:

said at least one radiating element (401) being further equipped to emit ionizing radiation towards at least a second location (L2) of said ceramic layer; and

at least a second sensor (404) arranged at a second position (S2) in the at least one radiation unit (401),

the at least second sensor being configured to detect emissions released at least a second location (L2) of the ceramic layer in response to the ionizing radiation, and

the at least one controller (403) is further configured to evaluate a thickness of the ceramic layer at the at least second location (L2) based on the detected emissions.

12. The processing system (318) for controlling the thickness of a ceramic layer on a substrate according to claim 10 or 11, the at least one controller (403) being configured to:

comparing the thickness of the ceramic layer in the at least first position (L1) with the thickness of the ceramic layer in the at least second position (L2); and

-adjusting the thickness of the ceramic layer in the at least first position (L1) to be the thickness of the ceramic layer in the at least second position (L2).

13. The processing system (318) for controlling the thickness of a ceramic layer on a substrate according to any of claims 10-12, wherein the at least one controller (403) is configured to adjust the thickness of the ceramic layer in a region corresponding to at least one of the thickness of the ceramic layer in the at least first position (L1) and the thickness of the ceramic layer in the at least second position (L2).

14. A roll-to-roll system comprising at least one processing system according to any of claims 10-13.

15. A processing system (318) includes at least one radiation unit (401), at least a first sensor (402), at least a second sensor (404), and at least one controller (403).