CN111146306A - Narrow-band infrared absorber based on phonon excimer magnetic resonance and preparation method - Google Patents
Narrow-band infrared absorber based on phonon excimer magnetic resonance and preparation method Download PDFInfo
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- CN111146306A CN111146306A CN201911384674.5A CN201911384674A CN111146306A CN 111146306 A CN111146306 A CN 111146306A CN 201911384674 A CN201911384674 A CN 201911384674A CN 111146306 A CN111146306 A CN 111146306A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000001646 magnetic resonance method Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 238000001228 spectrum Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 5
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
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- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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Abstract
The invention relates to a narrow-band infrared absorber based on phonon excimer magnetic resonance, which comprises an incident medium (1) and a semiconductor substrate (2), wherein the incident medium (1) is attached to the upper surface of the semiconductor substrate (2), and the top end of the semiconductor substrate (2) is provided with a concave slit. A method for preparing a slit comprises the following steps: step S1: designing the slit through simulation software; step S2: calculating the spectrum and field distribution of the slit by a finite element method; step S3: and etching the optimized slit on the semiconductor substrate (2) by utilizing a focused ion beam to form a narrow-band infrared absorber, wherein the working atmospheric window of the infrared absorber is 10.32-12.61 mu m. Compared with the prior art, the invention has the advantages of simple structure, easy preparation, effective reduction of the volume of the absorber and the like.
Description
Technical Field
The invention relates to the technical field of super surfaces, in particular to a narrow-band infrared absorber based on phonon excimer magnetic resonance and a preparation method thereof.
Background
The phonon excimer-based magnetic harmonic oscillator is a crystal lattice collective oscillation of a polar semiconductor material caused by the irradiation of an external electromagnetic wave, and forms displacement current around a slit, so that an electromagnetic field is localized in a structure on the surface of a semiconductor. The magnetic resonance sub-mode based on the phonon excimer can be used as a core component in the fields of energy, photoelectric detection, aerospace, biology, medicine and the like.
The narrow-band absorber is a necessary element for realizing high-efficiency narrow-band spectrum perfect absorption and photoelectric detection, can realize perfect absorption of electromagnetic waves with a narrow band of a specific wavelength, and has the principle that the resonance absorption phenomenon of the electromagnetic waves is caused by the phonon excimer magnetic resonance phenomenon.
The polar semiconductor SiC belongs to the wide band gap semiconductor material, in the transverse optical acoustic branch (omega)LO) And longitudinal optical acoustic branch (omega)TO) The material shows metal properties, is similar to an electronic collective oscillation mode of metal surface plasmons, can realize a collective oscillation mode, namely a phonon excimer mode, and has the advantages that the phonon excimer oscillation life of the crystal lattice is far longer than that of the metal, so that the half-height width of an excitation peak of the phonon mode is 1-2 orders of magnitude narrower than that of the excitation peak of the plasmon mode, the Q factor is higher, and the material is a better choice for being used as a narrow-band absorber. In addition, the 6H-SiC lattice structure is similar to diamond, so that the narrow-band absorber with high hardness is not easy to damage, and the chemical property ensures that the narrow-band absorber is stable and has long service life.
Although the conventional optical absorber based on surface plasmon resonance or surface phonon excimer resonance is a sub-wavelength structure, the excitation peak position is limited by a period, and the size of the conventional optical absorber is slightly smaller than the excitation wavelength.
Disclosure of Invention
The invention aims to overcome the defect that the excitation peak position of the optical absorber is limited by the period to cause larger structure size in the prior art, and provides a narrow-band infrared absorber based on phonon excimer magnetic resonance and a preparation method thereof.
The purpose of the invention can be realized by the following technical scheme:
a narrow-band infrared absorber based on phonon excimer magnetic resonance comprises an incident medium and a semiconductor substrate, wherein the incident medium is attached to the upper surface of the semiconductor substrate, and a concave slit is formed in the top end of the semiconductor substrate.
Preferably, the cross section of the slit is rectangular.
The width of the slit is 100-1800 nm.
The depth of the slit is 200-1800 nm.
Preferably, the semiconductor substrate is a 6H — SiC substrate.
A preparation method of a slit of the narrow-band infrared absorber based on the phonon excimer magnetic resonance comprises the following steps:
step S1: designing the slit through simulation software;
step S2: calculating the spectrum and field distribution of the slit by a finite element method;
step S3: and etching the designed slit on the semiconductor substrate by using a focused ion beam to form a narrow-band infrared absorber.
The calculation band of the simulation software is 10.32-12.61 mu m.
Compared with the prior art, the invention has the following beneficial effects:
1. the narrow-band absorber is excited in a phonon magnetic resonance mode, can be excited by a deep sub-wavelength structure which is 28 times smaller than the relative wavelength, and reduces the whole volume of the absorber.
2. The slit has a simple structure, is easy to prepare, and the optimized slit can ensure that the absorption of the narrow-band absorber is higher than 99.5%.
3. The narrow-band half-height width of the narrow-band absorber can reach 89 nm.
4. The semiconductor substrate is a 6H-SiC substrate, the hardness of the 6H-SiC substrate is high, the manufactured narrow-band absorber is not easy to damage, and the chemical property of the narrow-band absorber ensures that the narrow-band absorber is stable and has long service life.
5. The narrow-band absorber is insensitive to the incident angle of exciting light, the incident light can be incident from any angle, and the optimal incident angle is vertical incidence.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic flow chart of the present invention;
FIG. 3 is a schematic representation of the absorption spectrum of a narrow band absorber of the present invention.
Reference numerals:
1-a semiconductor substrate; 2-an incident medium; 3-width of slit; 4-depth of slit.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
As shown in fig. 1, the narrow-band infrared absorber based on phonon excimer magnetic resonance comprises an incident medium 1 and a semiconductor substrate 2, wherein the incident medium 1 is attached to the upper surface of the semiconductor substrate 2, and a concave slit is arranged at the top end of the semiconductor substrate 2.
The cross section of the slit is rectangular, the width 3 of the slit is 100-1800 nm, and the depth 4 of the slit is 200-1800 nm.
The semiconductor substrate 2 is a 6H — SiC substrate.
As shown in fig. 2, a method for preparing a slit of a narrow-band infrared absorber based on phonon excimer magnetic resonance comprises the following steps:
step S1: designing a slit through simulation software;
step S2: calculating the spectrum and field distribution of the slit by a finite element method;
step S3: the designed slit is etched on the semiconductor substrate 2 by using a focused ion beam to form a narrow-band infrared absorber.
The calculation band of the simulation software is 10.32-12.61 mu m.
Example one
The incident medium uses air to replace a vacuum environment, the semiconductor substrate 2 is a 6H-SiC substrate, and the preparation method of the corresponding narrow-band infrared absorber slit based on the phonon excimer magnetic resonance specifically comprises the following steps:
step S1: calculating the dielectric constant of the 6H-SiC substrate by a Drude-Lorentz model, wherein the dielectric constant specifically comprises the following steps:
wherein the high-frequency dielectric constant ε∞6.7, 4.76cm-1Transverse optical acoustic branch omega of a semiconductor substrateLO＝969cm-1Longitudinal optical acoustic branch omega of a semiconductor substrateTo＝793cm-1I is an imaginary unit, and the dielectric constant epsilon of the corresponding 6H-SiC substrate is calculated by inputting different incident light wave numbers omegaSiC(ω)。
Step S2: importing the dielectric constant of the 6H-SiC substrate obtained by calculation into CST simulation software;
step S3: drawing a three-dimensional structure diagram of the slit shown in fig. 1 by using CST simulation software, wherein the thickness of the 6H-SiC substrate is 4 μm, the slit width b is 320nm, the slit depth H is 400nm, the thickness in the y direction is 100nm, and the period in the x direction is 4 μm;
step S4: carrying out simulation calculation through a Finite Element (FEM) module, setting a calculation wave band 21-30THz, setting periodic boundary conditions 'unit cell' in the xy direction, setting open (add space) in the z direction, and encrypting grids around the slot, wherein electromagnetic waves are incident along the z-axis direction;
step S5: the resonance absorption peak can be judged to be a magnetic resonance mode through the electric field distribution and the magnetic field distribution at the resonance absorption position in the simulation result;
step S6: the width 3 and the depth 4 of the slit are changed, and the resonance absorption peak is adjusted;
step S7: setting the slit width 3 and the slit depth 4 as scanning parameters respectively, selecting the slit width 3 with relatively large width and the slit depth 4 with relatively small depth in the scanning result, and taking the slit width 3 and the slit depth 4 which can realize the perfect absorption of narrow-band infrared as optimal parameters;
step S8: etching a slit corresponding to the optimal parameter on the 6H-SiC substrate by a focused ion beam etching instrument (FIB) according to the optimal parameter to prepare a narrow-band absorber;
step S9: the narrow band absorber reflection spectrum was measured using a fourier infrared spectrometer (FTIR), and as shown in fig. 3, under the conditions of a slit width b of 320nm and a slit depth h of 400nm, the half height width of the absorption peak of the narrow band infrared absorber was 88.7nm, the quality factor Q was 127, and the wavelength of the absorption peak was 11.29 μm.
In addition, it should be noted that the specific embodiments described in the present specification may have different names, and the above descriptions in the present specification are only illustrations of the structures of the present invention. Minor or simple variations in the structure, features and principles of the present invention are included within the scope of the present invention. Various modifications or additions may be made to the described embodiments or methods may be similarly employed by those skilled in the art without departing from the scope of the invention as defined in the appending claims.
Claims (8)
1. The narrow-band infrared absorber based on the phonon excimer magnetic resonance comprises an incident medium (1) and a semiconductor substrate (2), wherein the incident medium (1) is attached to the upper surface of the semiconductor substrate (2), and the narrow-band infrared absorber is characterized in that a concave slit is formed in the top end of the semiconductor substrate (2).
2. The narrow band infrared absorber based on phonon excimer magnetic resonance as claimed in claim 1, wherein the cross section of the slit is rectangular.
3. The narrow-band infrared absorber based on phonon excimer magnetic resonance as claimed in claim 2, wherein the width (3) of the slit is 100-1800 nm.
4. The narrow band infrared absorber based on phonon excimer magnetic resonance as claimed in claim 2, wherein the depth (4) of the slit is 200-1800 nm.
5. The narrow band infrared absorber based on phonon excimer magnetic resonance as claimed in claim 1, wherein the semiconductor substrate (2) is a 6H-SiC substrate.
6. The narrow-band infrared absorber based on phonon excimer magnetic resonance as claimed in claim 1, wherein the incident medium (1) is a vacuum environment.
7. A method for preparing a slit of a narrow-band infrared absorber based on phonon excimer magnetic resonance as claimed in any one of claims 1 to 6, comprising the steps of:
step S1: designing the slit through simulation software;
step S2: calculating the spectrum and field distribution of the slit by a finite element method;
step S3: and etching the designed slit on the semiconductor substrate (2) by utilizing a focused ion beam to form a narrow-band infrared absorber.
8. The manufacturing method according to claim 7, wherein the calculation band of the simulation software is 10.32 to 12.61 μm.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160103341A1 (en) * | 2013-02-14 | 2016-04-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Actively Tunable Polar-Dielectric Optical Devices |
| CN110098267A (en) * | 2019-04-09 | 2019-08-06 | 深圳激子科技有限公司 | A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160103341A1 (en) * | 2013-02-14 | 2016-04-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Actively Tunable Polar-Dielectric Optical Devices |
| CN110098267A (en) * | 2019-04-09 | 2019-08-06 | 深圳激子科技有限公司 | A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer |
Non-Patent Citations (2)
| Title |
|---|
| JOSHUA D. CALDWELL等: "Low-Loss，Extreme Subdiffraction Photon Confinement via Silicon Carbide Localized Surface Phonon Polariton Resonators", 《NANO LETTERS》 * |
| 买尔旦·吐合达洪: "SiC表面声子极化激元的激发及其光学特性研究", 《中国优秀硕士学位论文全文数据库基础科学辑》 * |
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