CN111146232A - Micro-LED display device and electronic equipment - Google Patents
Micro-LED display device and electronic equipment Download PDFInfo
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- CN111146232A CN111146232A CN201911373149.3A CN201911373149A CN111146232A CN 111146232 A CN111146232 A CN 111146232A CN 201911373149 A CN201911373149 A CN 201911373149A CN 111146232 A CN111146232 A CN 111146232A
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- quantum dot
- diffusion film
- display device
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- dot diffusion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The invention discloses a Micro-LED display device which comprises a blue LED light source matrix, a PCB driving board and a quantum dot diffusion film. And the PCB driving board is electrically provided with a blue LED light source matrix. And the quantum dot diffusion film is arranged above the blue LED light source matrix. The blue LED light source matrix forms a first pixel arrangement of i adjacent rows and j adjacent columns, where i and j are integers equal to or greater than 2; the quantum dot diffusion film comprises a high-diffusivity structure which is arranged on the light incident surface of the quantum dot diffusion film. The invention provides an ultrathin display device with wide color gamut and high dynamic contrast, which improves the uniform light emission of a surface light source and improves the utilization efficiency of light.
Description
Technical Field
The invention relates to a display device, in particular to a Micro-LED display device and electronic equipment.
Background
Micro-LED (light emitting diode) is a display technology which is used for carrying out microminiaturization and matrixing on a traditional LED structure and manufacturing a driving circuit by adopting an integrated circuit process so as to realize addressing control and independent driving of each pixel point. Since various indexes such as brightness, life, contrast, reaction time, energy consumption, visual angle, resolution, and the like of Micro-LED technology are stronger than those of LCD (liquid crystal display) and OLED (organic electroluminescent diode) technologies, and have advantages of self-luminescence, simple structure, small volume, and energy saving, it is considered as a next generation display technology, and various display technology leaders and enterprises have started to be actively deployed.
Disclosure of Invention
The invention mainly solves the technical problem of providing an ultrathin display device with wide color gamut and high dynamic contrast, and simultaneously improving the uniform light emission of a surface light source and the utilization efficiency of light.
In order to solve the technical problems, the invention adopts a technical scheme that a Micro-LED display device is provided, and the Micro-LED display device comprises a blue light LED light source matrix, a PCB driving board and a quantum dot diffusion film. And the PCB driving board is electrically provided with the blue LED light source matrix. A quantum dot diffusion film disposed over the matrix of blue LED light sources. The blue LED light source matrix forms a first pixel arrangement of i adjacent rows and j adjacent columns, where i and j are integers equal to or greater than 2; the quantum dot diffusion film comprises a high-diffusivity structure which is arranged on the light incident surface of the quantum dot diffusion film.
According to the Micro-LED display device, a diffusion sheet does not need to be independently arranged, and the quantum dot diffusion film replaces the light emitting uniformity of a surface light source of the Micro-LED display device, so that the ultra-thin backlight module and the ultra-thin display device are realized, and a display picture with a high HDR contrast value and a wide color gamut of a terminal device is obtained. In addition, the whole display device is simpler in production, assembly process and structure, and high in structural stability. The quantum dot diffusion film comprises at least two quantum dots of red fluorescent quantum dots, green fluorescent quantum dots and yellow fluorescent quantum dots. The narrow light-emitting peak and high quantum efficiency of the quantum dots greatly improve the picture color quality and energy efficiency of the display equipment. The quantum dot diffusion film comprises at least one quantum dot of CdSe, CdS, CuInS, CdZnSe/ZnS, CdSe/CdS, InP/ZnS, CuInS/ZnS, InP/ZnSe/ZnS and perovskite quantum dots.
Further, a second pixel arrangement is arranged on the quantum dot diffusion film, the second pixel arrangement corresponds to the first pixel arrangement, and the second pixel arrangement at least comprises at least two quantum dots of red fluorescent quantum dots, yellow fluorescent quantum dots and green fluorescent quantum dots. And the PCB driving board drives the blue LED light source matrix to emit light, and then the blue LED light source matrix passes through the quantum dot diffusion film and then is displayed in an RGB or RYB mode.
In a preferred embodiment, the high-diffusivity structure is integrally formed on the quantum dot diffusion film, or the high-diffusivity structure is separately connected with the quantum dot diffusion film; the high diffusivity structures are distributed in a radiation shape, and the density of the high diffusivity structures is gradually reduced from each blue light LED light source to the outside.
In a preferred embodiment, the high diffusivity structure is a concave lens structure or a convex lens structure, which is a hemispherical structure, a tetrahedral structure, a polyhedral structure, a cylindrical structure or a near-conical structure.
In a preferred embodiment, the quantum dot diffusion film further comprises a high-reflectivity structure arranged on the light-emitting surface of the quantum dot diffusion film; the high-reflectivity structures are distributed in a radial shape, and the density of the high-reflectivity structures is gradually reduced from each blue LED light source outwards.
In a preferred embodiment, the Micro-LED display device further includes a reflective sheet disposed on the PCB driving board. The reflector plate is provided with a plurality of openings, each opening corresponds to a corresponding blue LED light source, light emitted by the blue LED light sources passes through the openings on the reflector plate to irradiate the quantum dot diffusion film, and the light reflected or scattered by the quantum dot diffusion film is reflected to the quantum dot diffusion film after returning to the reflector plate.
In a preferred embodiment, the quantum dot diffusion film further includes visible light diffusion particles including at least one of particles of SiO2, TiO2, Au, Ag, Al, Cu, Zn, Pt, Co, Ni, Cu2O, CuO, CdO, ZnO, glass fiber.
According to the embodiment of the invention, the Micro-LED display device, the touch panel and the glass cover plate are integrated into an electronic device which can be applied to a display terminal.
Drawings
The invention and its advantages will be better understood by studying the following detailed description of specific embodiments, given by way of non-limiting example and illustrated in the accompanying drawings, in which:
fig. 1 is an exploded view of a backlight device of embodiment 1 of the present invention.
Fig. 2 is a schematic structural view of a quantum dot diffusion film of embodiment 1 of the present invention.
Fig. 3 is a schematic structural view of a backlight device according to embodiment 2 of the present invention.
Detailed Description
Referring to the drawings, wherein like reference numbers refer to like elements throughout, the principles of the present invention are illustrated in an appropriate environment. The following description is based on illustrated embodiments of the invention and should not be taken as limiting the invention with regard to other embodiments that are not detailed herein.
The word "embodiment" is used herein to mean serving as an example, instance, or illustration. In addition, the articles "a" and "an" as used in this specification and the appended claims may generally be construed to mean "one or more" unless specified otherwise or clear from context to be directed to a singular form.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically connected, electrically connected or communicated with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Further, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
Example 1
First, a Micro-LED display device according to embodiment 1 of the present invention will be described with reference to fig. 1 to 2. The Micro-LED display device comprises a PCB driving board 10, a blue LED light source matrix 11, a quantum dot diffusion film 12 and a glass cover plate 13. And a PCB driving board 10, wherein the blue LED light source matrix 11 is electrically mounted on the PCB driving board 10. And a quantum dot diffusion film 12 disposed above the blue LED light source matrix 11. The blue LED light source matrix 11 forms a first pixel arrangement of i adjacent rows and j adjacent columns, where i and j are integers equal to or greater than 2; the quantum dot diffusion film 12 includes a high diffusivity structure 121 disposed on the light incident surface of the quantum dot diffusion film 12.
According to the Micro-LED display device, a diffusion sheet does not need to be independently arranged, the quantum dot diffusion film 12 replaces the surface light source light-emitting uniformity of the Micro-LED display device, so that the ultra-thin backlight module and the ultra-thin display device are realized, and the display picture with the high HDR contrast value and the wide color gamut of the terminal device is obtained. In addition, the whole display device is simpler in production, assembly process and structure, and high in structural stability. The quantum dot diffusion film 12 includes at least two kinds of quantum dots among red fluorescent quantum dots, green fluorescent quantum dots, and yellow fluorescent quantum dots. The narrow light-emitting peak and high quantum efficiency of the quantum dots greatly improve the picture color quality and energy efficiency of the display device. The quantum dot diffusion film 12 includes at least one quantum dot of CdSe, CdS, CuInS, CdZnSe/ZnS, CdSe/CdS, InP/ZnS, CuInS/ZnS, InP/ZnSe/ZnS, and perovskite quantum dots. The quantum dot diffusion film 12 further includes visible light diffusing particles including SiO2 particles.
A second pixel arrangement is disposed on the quantum dot diffusion film 12, the second pixel arrangement corresponding to the first pixel arrangement, the second pixel arrangement at least including at least two kinds of quantum dots among red fluorescent quantum dots, yellow fluorescent quantum dots, and green fluorescent quantum dots. The PCB driving board 10 drives the blue LED light source matrix 11 to emit light, and then displays the light in RGB or RYB mode after passing through the quantum dot diffusion film 12.
The high diffusivity structures 121 are integrally formed on the quantum dot diffusion film 12, and the high diffusivity structures 121 are radially distributed, and the density of the high diffusivity structures decreases from each blue light LED light source to the outside. The high diffusivity structure is a concave lens structure which is a hemispherical structure.
Example 2
Fig. 3 is an exploded view of a Micro-LED display device according to embodiment 2 of the present invention. Only the differences between embodiment 2 and embodiment 1 will be described below, and the descriptions of the similarities will be omitted.
The Micro-LED display device further includes a reflective sheet 14 disposed on the PCB driving board 10. The reflector plate has a plurality of openings 141, each opening 141 corresponds to a corresponding blue LED light source, light emitted by the blue LED light source passes through the opening 141 on the reflector plate 14 to irradiate the quantum dot diffusion film 12, and the light reflected or scattered by the quantum dot diffusion film 12 returns to the reflector plate 14 and then is reflected to the quantum dot diffusion film 12.
The quantum dot diffusion film 12 further comprises a high-reflectivity structure 122 arranged on the light-emitting surface of the quantum dot diffusion film 12; the high reflectivity structures 122 are radially disposed with a density that decreases from each blue LED light source.
While the invention has been described above with reference to certain embodiments, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the various features of the various embodiments of the present disclosure may be used in any combination, provided that there is no structural conflict, and the combination is not exhaustively described in this specification for brevity and resource conservation. Therefore, it is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. A Micro-LED display device, comprising:
a blue LED light source matrix;
the PCB driving board is electrically provided with the blue LED light source matrix;
a quantum dot diffusion film disposed over the blue LED light source matrix;
wherein the blue LED light source matrix forms a first pixel arrangement of i adjacent rows and j adjacent columns, where i and j are integers equal to or greater than 2; the quantum dot diffusion film comprises a high-diffusivity structure which is arranged on the light incident surface of the quantum dot diffusion film.
2. A Micro-LED display device according to claim 1, wherein: and a second pixel arrangement is arranged on the quantum dot diffusion film, corresponds to the first pixel arrangement and at least comprises at least two quantum dots of red fluorescent quantum dots, yellow fluorescent quantum dots and green fluorescent quantum dots.
3. A Micro-LED display device according to claim 1, wherein: the quantum dot diffusion film comprises at least one quantum dot of CdSe, CdS, CuInS, CdZnSe/ZnS, CdSe/CdS, InP/ZnS, CuInS/ZnS, InP/ZnSe/ZnS and perovskite quantum dots.
4. A Micro-LED display device according to claim 3, wherein: the high diffusivity structure is integrally formed on the quantum dot diffusion film, or the high diffusivity structure is connected with the quantum dot diffusion film in a split manner; the high diffusivity structures are radially distributed, and the density of the high diffusivity structures is gradually reduced from each blue light LED light source outwards.
5. A Micro-LED display device according to claim 4, characterized in that: the high-diffusivity structure is a concave lens structure or a convex lens structure, and the high-diffusivity structure is a hemispherical structure, a tetrahedral structure, a polyhedral structure, a cylindrical structure or a nearly conical structure.
6. A Micro-LED display device according to claim 2, characterized in that: the quantum dot diffusion film also comprises a high-reflectivity structure which is arranged on the light-emitting surface of the quantum dot diffusion film; the high-reflectivity structures are distributed in a radial shape, and the density of the high-reflectivity structures is gradually reduced from each blue LED light source outwards.
7. A Micro-LED display device according to claim 1, wherein: the Micro-LED display device further comprises a reflector plate which is arranged on the PCB driving board.
8. A Micro-LED display device according to claim 7, characterized in that: the reflector plate is provided with a plurality of openings, each opening corresponds to a corresponding blue LED light source, light emitted by the blue LED light sources penetrates through the openings on the reflector plate to irradiate the quantum dot diffusion film, and the light reflected or scattered by the quantum dot diffusion film returns to the reflector plate and then is reflected to the quantum dot diffusion film.
9. A Micro-LED display device according to claim 1, wherein: the quantum dot diffusion film also comprises visible light diffusion particles, and the visible light diffusion particles comprise at least one particle of SiO2, TiO2, Au, Ag, Al, Cu, Zn, Pt, Co, Ni, Cu2O, CuO, CdO, ZnO and glass fiber.
10. An electronic device, comprising: touch panel, glass cover plate, and Micro-LED display device according to any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911373149.3A CN111146232A (en) | 2019-12-27 | 2019-12-27 | Micro-LED display device and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911373149.3A CN111146232A (en) | 2019-12-27 | 2019-12-27 | Micro-LED display device and electronic equipment |
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| CN111146232A true CN111146232A (en) | 2020-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911373149.3A Pending CN111146232A (en) | 2019-12-27 | 2019-12-27 | Micro-LED display device and electronic equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627345A (en) * | 2020-06-09 | 2020-09-04 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN112652641A (en) * | 2020-12-21 | 2021-04-13 | 业成科技（成都）有限公司 | Light source assembly, preparation method thereof and display device |
| CN113467163A (en) * | 2021-07-29 | 2021-10-01 | 中国科学院长春光学精密机械与物理研究所 | Projection display system and display method based on MicroLED and fluorescent screen |
| CN114578613A (en) * | 2020-11-30 | 2022-06-03 | 优美特创新材料股份有限公司 | Backlight module containing fluorescent powder and quantum dots |
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