CN111141799A - Chip of nitrogen-oxygen sensor - Google Patents
Chip of nitrogen-oxygen sensor Download PDFInfo
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- CN111141799A CN111141799A CN202010103278.7A CN202010103278A CN111141799A CN 111141799 A CN111141799 A CN 111141799A CN 202010103278 A CN202010103278 A CN 202010103278A CN 111141799 A CN111141799 A CN 111141799A
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- substrate
- pad
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- bonding pad
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- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 74
- 239000000463 material Substances 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011267 electrode slurry Substances 0.000 claims description 7
- 239000002003 electrode paste Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Measuring Oxygen Concentration In Cells (AREA)
Abstract
The invention relates to a chip of a nitrogen-oxygen sensor, which comprises: the first bonding pad, the second bonding pad, the third bonding pad, the fourth bonding pad, the fifth bonding pad and the sixth bonding pad are respectively arranged on two opposite surfaces of the chip of the nitrogen-oxygen sensor; the chip of the nitrogen-oxygen sensor also comprises: an external electrode connected to the fifth pad; a first internal electrode connected to the first pad; a second internal electrode connected to the second pad; a third internal electrode connected to the third pad; a reference electrode connected to the fourth pad; and a heating electrode connected to the fifth pad and the sixth pad; wherein the fifth pad is connected to a ground terminal. Compared with the traditional chip of the 8-line nitrogen-oxygen sensor, the chip of the nitrogen-oxygen sensor has the advantages of simpler structure and lower cost.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a chip of a nitrogen-oxygen sensor.
Background
The chip of the traditional nitrogen-oxygen sensor is 8-wire, and the structure is complex, so the preparation difficulty and the material cost are high.
Disclosure of Invention
In view of the above, it is necessary to provide a chip of a nitroxide sensor.
A chip of a nitrogen oxygen sensor, comprising: the first bonding pad, the second bonding pad, the third bonding pad, the fourth bonding pad, the fifth bonding pad and the sixth bonding pad are respectively arranged on two opposite surfaces of the chip of the nitrogen-oxygen sensor;
the chip of the nitrogen-oxygen sensor also comprises:
an external electrode connected to the fifth pad;
a first internal electrode connected to the first pad;
a second internal electrode connected to the second pad;
a third internal electrode connected to the third pad;
a reference electrode connected to the fourth pad; and
a heating electrode connected to the fifth pad and the sixth pad;
wherein the fifth pad is connected to a ground terminal.
In one embodiment, the substrate further comprises a substrate comprising a first substrate, a second substrate, a third substrate, a fourth substrate, a fifth substrate, a sixth substrate, a seventh substrate, and an eighth substrate;
the first substrate, the outer electrode, the second substrate, the third substrate, the first inner electrode, the fourth substrate, the third inner electrode, the fifth substrate, the reference electrode, a sixth substrate, the heater electrode, a seventh substrate, and the eighth substrate are sequentially disposed;
wherein the first and second internal electrodes are disposed on the fifth substrate.
In one embodiment, the areas of the first base material and the eighth base material are smaller than the areas of the second base material, the third base material, the fourth base material, the fifth base material, the sixth base material and the seventh base material, so as to expose the first pad, the second pad, the third pad, the fourth pad, the fifth pad and the sixth pad.
In one embodiment, the substrate is a YSZ ceramic sheet material.
In one embodiment, the thickness of the first, second, third, fourth, fifth, sixth, seventh and eighth substrates is 150-180 μm.
In one embodiment, four cavities are formed in the fourth substrate, and the four cavities are used as an air inlet chamber, a buffer chamber, a first working chamber and a second working chamber.
In one embodiment, an outer electrode lead is connected to the outer electrode, a first inner electrode lead is connected to the first inner electrode, a second inner electrode lead is connected to the second inner electrode, a third inner electrode lead is connected to the third inner electrode, and a reference electrode lead is connected to the reference electrode;
insulation layers are arranged around the outer electrode lead, the first inner electrode lead, the second inner electrode lead, the third inner electrode lead, the reference electrode lead and the heating electrode.
In one embodiment, the first pad, the second pad, the third pad, the fourth pad, the fifth pad and the sixth pad are provided with insulating pads correspondingly.
In one embodiment, the insulating layer between the heating electrode and the seventh substrate, the seventh insulating layer, and the eighth insulating layer are respectively provided with opposite conductive holes, and the heating electrode is connected with the fifth pad and the sixth pad through the conductive holes.
In one embodiment, the external electrode is connected with the fifth bonding pad through a side opening of a chip of the nitrogen-oxygen sensor;
the first inner electrode is connected with the first bonding pad through a side opening of a chip of the nitrogen-oxygen sensor;
the second inner electrode is connected with the second bonding pad by coating electrode slurry on the side edge of the chip of the nitrogen-oxygen sensor;
the third inner electrode is connected with the third bonding pad by coating electrode slurry on the side edge of the chip of the nitrogen-oxygen sensor;
and the reference electrode is connected with the fourth bonding pad by coating electrode slurry on the side edge of the chip of the nitrogen-oxygen sensor.
Heating electrode and outer electrode common ground wire in above-mentioned nitrogen oxygen sensor's the chip to lead out the lead wire of 6 electrodes respectively through 6 pads, form the chip of the nitrogen oxygen sensor of 6 line structures, for traditional 8 line nitrogen oxygen sensor's chip, the structure is simpler, and the cost is lower.
Drawings
FIG. 1 is an exploded view of a chip of a NOx sensor in one embodiment.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings.
Referring to fig. 1, the present application provides a chip of a nitroxide sensor, which has a 6-wire structure, so that the structure is simpler than that of a conventional 8-wire nitroxide sensor, and thus, the preparation difficulty and cost are reduced.
The chip 100 of the oxynitride sensor comprises a first bonding pad 111, a second bonding pad 112, a third bonding pad 113, a fourth bonding pad 114, a fifth bonding pad 115 and a sixth bonding pad 116 which are respectively arranged on two opposite surfaces of the chip 100 of the oxynitride sensor. The chip 100 of the nitrogen oxygen sensor also includes an outer electrode 121, a first inner electrode 122, a second inner electrode 123, a third inner electrode 124, a reference electrode 125, and a heater electrode 126. Wherein the external electrode 121 is connected to the fifth pad 115. The first internal electrode 122 is connected to the first pad 111. The second internal electrode 122 is connected to the second pad 112. The third internal electrode 124 is connected to the third pad 113. The reference electrode 125 is connected to the fourth pad 114. The heater electrode 126 is connected to the fifth pad 115 and the sixth pad 116. The fifth pad 115 is connected to the ground, i.e. the heater electrode 126 and the outer electrode 121 share the ground, so that the leads of the 6 electrodes are led out through the 6 pads, thereby forming the chip 100 of the 6-wire oxynitride sensor.
In one embodiment, the chip 100 of the nitroxide sensor optionally includes a substrate and an insulating layer 140. Wherein, the substrate can adopt YSZ (yttria-stabilized zirconia) ceramic sheet material. The thickness of each base material can be set to be 150-180 μm. The insulating layer 140 may be disposed around the outer electrode 121, the first inner electrode 122, the second inner electrode 123, the third inner electrode 124, the reference electrode 125, and the heater electrode 126.
Specifically, the base materials include a first base material 131, a second base material 132, a third base material 133, a fourth base material 134, a fifth base material 135, a sixth base material 136, a seventh base material 137, and an eighth base material 138. The first substrate 131, the external electrode 121, the second substrate 132, the third substrate 133, the first internal electrode 122, the fourth substrate 134, the third internal electrode 124, the fifth substrate 135, the reference electrode 125, the sixth substrate 136, the heater electrode 126, the seventh substrate 137, and the eighth substrate 138 are sequentially stacked. The first internal electrode 122 and the second internal electrode 123 are disposed on the fifth substrate 135. Four adjacent cavities, namely an air inlet chamber 151, a buffer chamber 152, a first working chamber 153 and a second working chamber 154, are formed in the fourth substrate 134.
In this embodiment, since the first pad 111, the second pad 112, and the third pad 113 on the upper surface need to be exposed, the area of the first substrate 131 on the upper surfaces of the first pad 111, the second pad 112, and the third pad 113 needs to be smaller than the area of the other substrate layers. The other base material layers are the second base material 132, the third base material 133, the fourth base material 134, the fifth base material 135, the sixth base material 136, the seventh base material 137, and the eighth base material 128.
Illustratively, the external electrode 121 is coated with electrode paste through the side of the chip 100 of the oxynitride sensor using an external electrode lead 161 to be connected to the fifth pad 115; the first internal electrode 122 is connected to the first pad 111 through a side opening of the chip 100 of the nitroxide sensor by a first internal electrode lead 162; the second internal electrode 123 is connected to the second pad 112 by applying electrode paste through the side of the chip 100 of the oxynitride sensor using a second internal electrode lead 163; the third internal electrode 124 is connected to the third pad 113 by coating electrode paste through the side of the chip of the oxynitride sensor using a third internal electrode lead 164; the reference electrode 125 is connected to the fourth pad 114 by coating an electrode paste through the side of the chip of the oxynitride sensor using a reference electrode lead 165. Opposite conductive holes are formed in the insulating layer 140 between the heating electrode 126 and the seventh base 137, the seventh base 137 and the eighth base 128, so that two leads of the heating electrode 126 are connected with the fifth bonding pad 115 and the sixth bonding pad 116 through the conductive holes respectively.
The insulating layers 140 are disposed on the upper and lower layers of the outer electrode lead 161, the first inner electrode lead 162, the second inner electrode lead 163, the third inner electrode lead 164, the reference electrode lead 165 and the heating electrode 126, so that the insulating layers 140 can be wrapped around the electrode leads to achieve a better insulating effect. The shape of each insulating layer 140 may be set according to the shape of the corresponding electrode lead, respectively. It should be noted that, because the distance between the two leads of the heating electrode 126 is small, the insulating layers 140 on the upper and lower layers of the heating electrode 126 are usually directly configured as a plate-shaped structure, and the two insulating layers 140 can be respectively configured on the upper and lower layers of the heating electrode to achieve a better insulating effect. In addition, the insulating layer 140 on the upper layer of the external electrode 121 cannot block the lead-out of the first pad 111, the second pad 112, and the third pad 113.
Wherein a portion of the first internal electrode 122 and a portion of the second internal electrode 123 are disposed on the fifth substrate 135. The first internal electrode 122 on the fifth substrate 135 and the first internal electrode 122 on the fourth substrate 134 may be coated through the side of the first working chamber 153 to be integrated. The second internal electrode 123 on the fifth substrate 135 and the second internal electrode 123 on the fourth substrate 134 may be coated through the side of the second working chamber 154 to be integrated.
Further, the first pad 111, the second pad 112, the third pad 113, the fourth pad 114, the fifth pad 115, and the sixth pad 116 are provided with an insulating pad 142 corresponding thereto, and the shape of the insulating pad 142 may be set according to the pad shape.
The heating electrode 126 and the outer electrode 121 in the chip 100 of the nitrogen oxygen sensor share the ground wire, and lead wires of 6 electrodes are respectively led out through 6 bonding pads, so that the chip 100 of the nitrogen oxygen sensor with a 6-wire structure is formed, and compared with the traditional chip of an 8-wire nitrogen oxygen sensor, the structure is simpler, and the cost is lower.
Claims (10)
1. A chip of a nitrogen-oxygen sensor is characterized by comprising: the first bonding pad, the second bonding pad, the third bonding pad, the fourth bonding pad, the fifth bonding pad and the sixth bonding pad are respectively arranged on two opposite surfaces of the chip of the nitrogen-oxygen sensor;
the chip of the nitrogen-oxygen sensor also comprises:
an external electrode connected to the fifth pad;
a first internal electrode connected to the first pad;
a second internal electrode connected to the second pad;
a third internal electrode connected to the third pad;
a reference electrode connected to the fourth pad; and
a heating electrode connected to the fifth pad and the sixth pad;
wherein the fifth pad is connected to a ground terminal.
2. The chip of claim 1, further comprising a substrate, wherein the substrate comprises a first substrate, a second substrate, a third substrate, a fourth substrate, a fifth substrate, a sixth substrate, a seventh substrate, and an eighth substrate;
the first substrate, the external electrode, the second substrate, the third substrate, the first internal electrode, the fourth substrate, the third internal electrode, the fifth substrate, the reference electrode, the sixth substrate, the heater electrode, the seventh substrate, and the eighth substrate are sequentially stacked;
wherein the first and second internal electrodes are disposed on the fifth substrate.
3. The chip of claim 2, wherein the first substrate and the eighth substrate each have an area smaller than the areas of the second substrate, the third substrate, the fourth substrate, the fifth substrate, the sixth substrate, and the seventh substrate to expose the first pad, the second pad, the third pad, and the fourth pad, the fifth pad, and the sixth pad.
4. The chip of claim 2, wherein the substrate is made of YSZ ceramic sheet material.
5. The chip of claim 2, wherein the first, second, third, fourth, fifth, sixth, seventh and eighth substrates each have a thickness in the range of 150-180 μm.
6. The chip of claim 1, wherein the fourth substrate has four cavities formed therein, the four cavities being used as an air inlet chamber, a buffer chamber, a first working chamber and a second working chamber.
7. The chip of claim 1, wherein the external electrode is connected with an external electrode lead, the first internal electrode is connected with a first internal electrode lead, the second internal electrode is connected with a second internal electrode lead, the third internal electrode is connected with a third internal electrode lead, and the reference electrode is connected with a reference electrode lead;
insulation layers are arranged around the outer electrode lead, the first inner electrode lead, the second inner electrode lead, the third inner electrode lead, the reference electrode lead and the heating electrode.
8. The chip of nitrogen-oxygen sensor of claim 7, wherein the first bonding pad, the second bonding pad, the third bonding pad, the fourth bonding pad, the fifth bonding pad and the sixth bonding pad are correspondingly provided with insulating bonding pads.
9. The chip of claim 1, wherein the insulating layer between the heating electrode and the seventh substrate, and the eighth substrate are respectively provided with opposite conductive holes, and the heating electrode is connected to the fifth pad and the sixth pad through the conductive holes.
10. The chip of the nitroxide sensor of claim 9, wherein the external electrode is coated with electrode paste through a side of the chip of the nitroxide sensor to connect with the fifth pad;
the first inner electrode is connected with the first bonding pad by coating electrode slurry on the side edge of the chip of the nitrogen-oxygen sensor;
the second inner electrode is connected with the second bonding pad by coating electrode slurry on the side edge of the chip of the nitrogen-oxygen sensor;
the third inner electrode is connected with the third bonding pad by coating electrode slurry on the side edge of the chip of the nitrogen-oxygen sensor;
and the reference electrode is connected with the fourth bonding pad by coating electrode slurry on the side edge of the chip of the nitrogen-oxygen sensor.
Priority Applications (1)
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CN202010103278.7A CN111141799A (en) | 2020-02-19 | 2020-02-19 | Chip of nitrogen-oxygen sensor |
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CN202010103278.7A CN111141799A (en) | 2020-02-19 | 2020-02-19 | Chip of nitrogen-oxygen sensor |
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Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4399017A (en) * | 1981-01-19 | 1983-08-16 | Nissan Motor Company, Limited | Gas sensor having lead wires extending in insulating and hermetically sealed holder |
US4419213A (en) * | 1981-02-19 | 1983-12-06 | Nissan Motor Company, Limited | Oxygen sensing element formed as laminate of thin layers on substrate provided with heater and lead wires |
US4479866A (en) * | 1980-10-17 | 1984-10-30 | Nissan Motor Company, Limited | Gas sensor with sensitive element enclosed in perforated hood |
US6338782B1 (en) * | 1998-11-04 | 2002-01-15 | Denso Corporation | Gas sensor |
US6348141B1 (en) * | 1999-04-19 | 2002-02-19 | Ngk Insulators, Ltd. | Gas sensor |
US20020175077A1 (en) * | 2001-03-30 | 2002-11-28 | Thomas Wahl | Gas sensor |
US20040188251A1 (en) * | 2003-03-31 | 2004-09-30 | Ngk Insulators, Ltd. | Gas sensor |
WO2006094923A1 (en) * | 2005-03-07 | 2006-09-14 | Robert Bosch Gmbh | Sensor element and sensor containing said element |
US20070080075A1 (en) * | 2005-10-07 | 2007-04-12 | Delphi Technologies, Inc. | NOx sensor and methods of using the same |
JP2008170341A (en) * | 2007-01-12 | 2008-07-24 | Ngk Spark Plug Co Ltd | Gas sensor element |
CN104049018A (en) * | 2014-06-30 | 2014-09-17 | 东风电子科技股份有限公司 | Nox sensor chip |
JP2016125888A (en) * | 2014-12-26 | 2016-07-11 | 日本特殊陶業株式会社 | Gas sensor element and gas sensor |
JP2017181301A (en) * | 2016-03-30 | 2017-10-05 | 日本特殊陶業株式会社 | Controller for gas sensor |
CN211825810U (en) * | 2020-02-19 | 2020-10-30 | 浙江百岸科技有限公司 | Chip of nitrogen-oxygen sensor |
-
2020
- 2020-02-19 CN CN202010103278.7A patent/CN111141799A/en active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4479866A (en) * | 1980-10-17 | 1984-10-30 | Nissan Motor Company, Limited | Gas sensor with sensitive element enclosed in perforated hood |
US4399017A (en) * | 1981-01-19 | 1983-08-16 | Nissan Motor Company, Limited | Gas sensor having lead wires extending in insulating and hermetically sealed holder |
US4419213A (en) * | 1981-02-19 | 1983-12-06 | Nissan Motor Company, Limited | Oxygen sensing element formed as laminate of thin layers on substrate provided with heater and lead wires |
US6338782B1 (en) * | 1998-11-04 | 2002-01-15 | Denso Corporation | Gas sensor |
US6348141B1 (en) * | 1999-04-19 | 2002-02-19 | Ngk Insulators, Ltd. | Gas sensor |
US20020175077A1 (en) * | 2001-03-30 | 2002-11-28 | Thomas Wahl | Gas sensor |
US20040188251A1 (en) * | 2003-03-31 | 2004-09-30 | Ngk Insulators, Ltd. | Gas sensor |
WO2006094923A1 (en) * | 2005-03-07 | 2006-09-14 | Robert Bosch Gmbh | Sensor element and sensor containing said element |
US20070080075A1 (en) * | 2005-10-07 | 2007-04-12 | Delphi Technologies, Inc. | NOx sensor and methods of using the same |
JP2008170341A (en) * | 2007-01-12 | 2008-07-24 | Ngk Spark Plug Co Ltd | Gas sensor element |
CN104049018A (en) * | 2014-06-30 | 2014-09-17 | 东风电子科技股份有限公司 | Nox sensor chip |
JP2016125888A (en) * | 2014-12-26 | 2016-07-11 | 日本特殊陶業株式会社 | Gas sensor element and gas sensor |
JP2017181301A (en) * | 2016-03-30 | 2017-10-05 | 日本特殊陶業株式会社 | Controller for gas sensor |
CN211825810U (en) * | 2020-02-19 | 2020-10-30 | 浙江百岸科技有限公司 | Chip of nitrogen-oxygen sensor |
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