CN111129266A - Side light-emitting device and manufacturing method thereof - Google Patents
Side light-emitting device and manufacturing method thereof Download PDFInfo
- Publication number
- CN111129266A CN111129266A CN201911416876.3A CN201911416876A CN111129266A CN 111129266 A CN111129266 A CN 111129266A CN 201911416876 A CN201911416876 A CN 201911416876A CN 111129266 A CN111129266 A CN 111129266A
- Authority
- CN
- China
- Prior art keywords
- light
- groove
- emitting
- conversion layer
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 56
- 239000003292 glue Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000084 colloidal system Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 7
- 238000003466 welding Methods 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a side light-emitting device and a manufacturing method thereof, wherein the side light-emitting device comprises: the light emitting device comprises at least one light emitting element, a base body, a light conversion layer and light reflection glue, wherein the base body is provided with a groove, the opening surface of the groove is located on the top surface of the base body, the light emitting element is arranged in the groove and connected with the base body, the light conversion layer is filled in the groove and covers the surface of the light emitting element, the light reflection glue covers the upper surface of the light conversion layer, the groove is provided with three closed side surfaces and surrounds the light emitting element, the light conversion layer and the light reflection glue, the groove is provided with an exposed side surface to expose the light conversion layer and the light reflection glue, and the exposed light conversion layer serves as a light emitting. The opening surface of the groove is positioned on the top surface of the substrate, the light-emitting surface is positioned on one side surface of the side light-emitting device, the light-emitting surface of the light-emitting device is not limited by the requirements of the solid welding and dispensing processes, the thickness of the light-emitting surface can be reduced, and the thickness of the light-emitting device is thinned.
Description
Technical Field
The invention belongs to the technical field of light emitting diodes, and particularly relates to a light emitting device and a manufacturing method thereof.
Background
At present, because of its advantages of long service life, short response time, energy saving and environmental protection, the light emitting diode is gradually replacing the traditional lighting technologies in various fields, becoming a new generation of lighting tools, and with the continuous development of technologies and applications, in order to meet the market demands, the light emitting diode is smaller and thinner, which is an inevitable trend.
Patent CN 204834671U and CN 104425701 a disclose a side-emitting light emitting diode support, if the opening side of the groove is used as the front side, the bottom surface and four side surfaces of the groove are used as the base material with light reflectivity, the light emitting element is located at the bottom surface of the groove, the light conversion layer is located on the front light emitting surface of the light emitting element, each side surface of the light emitting element and the light conversion layer is coated with reflective glue, the light from the light emitting element is reflected by the base material and the reflective glue after passing through the light conversion layer, and is emitted from the opening side of the groove, the thickness of the light emitting surface of the side light emitting device is about 0.2-0.4mm, the fixing welding and dispensing processes of the side light emitting device need to be completed in the groove, which is difficult to be narrow, and the thickness of the light emitting surface is influenced by the.
Disclosure of Invention
In order to overcome the technical defects, the invention provides a side light-emitting device which can reduce the thickness of a light-emitting surface.
In order to solve the problems, the invention is realized according to the following technical scheme:
a side-emitting light device, comprising: the light-emitting device comprises at least one light-emitting element, a base body, a light conversion layer and light reflection glue, wherein the base body is provided with a groove, the opening surface of the groove is positioned on the top surface of the base body, the light-emitting element is arranged in the groove and connected with the base body, the light conversion layer is filled in the groove and covers the surface of the light-emitting element, the light reflection glue covers the upper surface of the light conversion layer, the groove is provided with three closed side surfaces and surrounds the light-emitting element, the light conversion layer and the light reflection glue, the groove is provided with an exposed side surface to expose the light conversion layer and the light reflection glue, and the exposed light conversion layer serves as a light-emitting surface of the side light-emitting device.
Compared with the prior art, the invention has the beneficial effects that: the opening surface of the groove is positioned on the top surface of the base body (namely the top surface of the light-emitting device), and the light-emitting surface is positioned on one side surface of the side light-emitting device, so that the manufacturing process is simpler, the light-emitting surface of the light-emitting device is not limited by the requirements of the solid welding and dispensing processes, the thickness of the light-emitting surface can be reduced, and the thickness of the light-emitting device is further thinned.
As a further improvement of the present invention, the base body includes a substrate and a conductive layer, the substrate surrounds the outer sides of the three closed side surfaces, the conductive layer is laid on the bottom surface of the groove, and the light emitting element is arranged on the upper surface of the conductive layer and connected with the base body through the conductive layer.
As a further improvement of the invention, the grooves are light-reflective.
As a further improvement of the invention, the substrate is made of a light reflecting material so that the grooves have light reflecting property.
As a further improvement of the invention, the thickness of the light-emitting surface is 0.1-0.6 mm.
As a further development of the invention, the light conversion layer comprises at least one phosphor and at least one colloid.
As a further improvement of the present invention, the light emitting element includes at least one of a face-up chip, a flip chip, and a vertical chip.
The invention also provides a manufacturing method of the side light-emitting device, which comprises the following steps:
fixing at least one light-emitting element in a groove of a substrate, wherein the groove is provided with four closed side surfaces and an upward opening surface, and connecting the light-emitting element with the substrate;
filling a light conversion layer in the groove to cover the light emitting element in the light conversion layer;
covering the upper surface of the light conversion layer with light reflection glue;
and cutting the opening surface to obtain a side light-emitting device, wherein the groove is provided with an exposed side surface and three closed side surfaces to surround the light-emitting element, the light conversion layer and the light reflection glue are exposed from the exposed side surface, and the exposed light conversion layer is used as a light-emitting surface of the light-emitting device.
As a further improvement of the present invention, the cutting from the opening surface is specifically: and cutting along the parallel direction of the light-emitting element and perpendicular to the surface of the light-reflecting glue.
As a further improvement of the invention, the thickness of the light-emitting surface is 0.1-0.6 mm.
Compared with the prior art, the invention has the beneficial effects that: the opening surface of the groove is positioned on the top surface of the base body (namely the top surface of the light-emitting device), the light-emitting surface is positioned on one side surface of the side light-emitting device, and the fixing welding and dispensing process is carried out on the opening surface of the groove before cutting, so that the manufacturing process is simpler, the light-emitting surface of the light-emitting device is not limited by the requirements of the fixing welding and dispensing process, the thickness of the light-emitting surface can be reduced, and the thickness of the light-emitting device is further thinned.
Drawings
Embodiments of the invention are described in further detail below with reference to the attached drawing figures, wherein:
FIG. 1 is a side view of a side-emitting device according to an embodiment;
fig. 2 is a schematic view of an overall structure of the side light-emitting device according to the first embodiment;
FIG. 3 is a flow chart of a method of fabricating according to a second embodiment;
fig. 4 is a schematic structural diagram of a side-emitting device in step S1 of the manufacturing method according to the second embodiment;
fig. 5 is a schematic structural diagram of a side-emitting device in step S2 of the second manufacturing method according to the embodiment;
fig. 6 is a schematic structural diagram of a side-emitting device in step S3 of the manufacturing method according to the second embodiment;
fig. 7 is a schematic structural diagram of a side-emitting device in step S4 of the second manufacturing method according to the embodiment.
Description of the labeling: 1-a light emitting element; 2-a substrate; 21-a groove; 22-closed side; 23-exposed side (light exit/cut surface); 24-a substrate; 25-a conductive layer; 26-open face; a 3-light converting layer; 31-a phosphor; 32-colloid; 4-light reflecting glue; 5-conducting wire
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Example one
The present embodiment provides a side light-emitting device, as shown in fig. 1 and 2, including: at least one light-emitting element 1, a substrate 2, a light conversion layer 3 and a light reflection glue 4, wherein the substrate 2 is provided with a groove 21, an opening surface 26 of the groove 21 is positioned on the top surface of the substrate 2, the light-emitting element 1 is arranged in the groove 21 and connected with the substrate 2, the light conversion layer 3 is filled in the groove and covers the surface of the light-emitting element, the light reflection glue 4 covers the upper surface of the light conversion layer 3, so that the opening surface 26 becomes a closed top surface, the groove 21 is provided with three closed side surfaces 22, the light-emitting element 1, the light conversion layer 3 and the light reflection glue 4 are surrounded, the groove 21 is provided with an exposed side surface to expose the light conversion layer 3 and the light reflection glue 4, the exposed light conversion layer 3 is used as a light-emitting surface 23 of a side light-emitting device, namely, the exposed surface has four layers: the light-reflecting adhesive 4, the light conversion layer 3, the conductive layer 25 and the substrate 24, wherein the conductive layer 25 is a metal conductive layer.
The opening surface of the groove 21 is positioned on the top surface of the substrate 2 (namely the top surface of the light-emitting device), the light-emitting surface 23 is positioned on one side surface of the light-emitting device, and the fixing welding and dispensing process is carried out on the opening surface 26 of the groove 21 before cutting, so that the manufacturing process is simpler, the light-emitting surface 23 of the light-emitting device is not limited by the requirements of the fixing welding and dispensing process, the thickness of the light-emitting surface 23 can be reduced, the thickness of the light-emitting device is further thinned, the light-reflecting glue can prevent the light of a light-emitting element from being emitted from the top surface of the side light-emitting device, the single-side light-emitting amount of the side light-emitting device is improved.
Specifically, the light conversion layer 3 covers the upper surface, four side surfaces and the bottom surface of the whole groove 21 except the covering surface of the light emitting element 1, the light reflection glue 4 covers the upper surface of the light conversion layer 3 and fills the whole groove 21, and the connection mode among the light emitting elements 1 includes: in series, parallel, or both.
The base body 2 comprises a base material 24 and a conducting layer 25, the base material 24 surrounds the outer sides of the three closed side surfaces 22, the conducting layer 25 is laid on the bottom surface of the groove 21, the light-emitting element 1 is arranged on the upper surface of the conducting layer 25 and is connected with the base body 2 through the conducting layer 25, and specifically, the light-emitting element 1 is connected with the conducting layer 25 through a lead 5.
In the above embodiment, the groove 21 has a light reflecting property, so that light from the light emitting element 1 passes through the light conversion layer, is reflected by the light reflecting glue 4 and the substrate 24, and is emitted from the light emitting surface 23.
In the above embodiment, the substrate 24 may be made of a light reflecting material, so that the grooves 21 have light reflecting properties.
In the above embodiment, the thickness of the light emitting surface 23 is 0.1-0.6mm, and the thickness can be designed according to actual requirements, and the thickness of the light emitting surface of the side light emitting device of the embodiment is reduced through the above structure, so that the size of the light emitting device is reduced, and the light emitting device can meet market requirements.
In the above embodiment, the light conversion layer 3 includes at least one phosphor 31 and at least one colloid 32, and the phosphor 31 includes any one or more combinations of phosphors and quantum dots that have been disclosed, such as: nitrogen oxide fluorescent powder, YAG series fluorescent powder, nitride fluorescent powder, aluminosilicate fluorescent powder and the like; the glue 32 includes glues commonly used in the conventional led packaging process, such as: epoxy, silicone, and the like.
In the above-described embodiment, the light emitting element 1 includes at least one of a face-up chip, a flip chip, and a vertical chip.
Example two
The present embodiment provides a method for manufacturing a side light emitting device, as shown in fig. 3, including the following steps:
s1, as shown in fig. 4, at least one light emitting element 1 is fixed in a recess 21 of a base 2, the recess having four closed side surfaces 22 and an upward opening surface 26, and the light emitting element 1 is connected to the base 2. The substrate 2 comprises a conductive layer 25, the conductive layer 25 is laid on the bottom surface of the groove 1, and the light-emitting element 1 is connected with the conductive layer 25 through the lead 5, so that the light-emitting element 1 is connected with the substrate 2.
S2, as shown in fig. 5, filling the light conversion layer 3 in the groove 21 to cover the light emitting element 1 in the light conversion layer 3, i.e. the light conversion layer 3 covers the upper surface, four side surfaces and the bottom surface of the whole groove 21 except the covering surface of the light emitting element 1.
S3, as shown in fig. 6, the light-reflecting glue 4 covers the upper surface of the light-converting layer 3, that is, the light-reflecting glue 4 covers the upper surface of the light-converting layer 3, and fills the whole recess 21, so that the opening surface 26 becomes a closed top surface, at this time, the base body 2 has four closed side surfaces, the base body includes the substrate 24, the closed side surfaces 22 are surrounded by the substrate 24, the substrate 24 has light-reflecting properties, and the conductive layer 25 is disposed on the substrate 24.
S4, as shown in fig. 7, the opening surface 26 is cut to obtain a side light emitting device, in which the groove 21 has an exposed side 23 and three closed sides 22 to surround the light emitting element 1, the light conversion layer 3 and the light reflective glue 4 are exposed from the exposed side 23, and the exposed light conversion layer 3 serves as the light emitting surface 23 of the light emitting device.
Specifically, the cutting from the opening surface 26 is: the cutting is performed along the parallel direction of the light emitting element 1 and perpendicular to the surface of the light reflecting glue 4, and the cutting position is located between two side edges of the light conversion layer 3 parallel to the light emitting element 1.
According to the above method, the thickness of the light emitting surface 23 can be between 0.1 mm and 0.6 mm.
Finally, the side-emitting device manufactured according to the method has the following features: the side light-emitting device comprises at least one light-emitting element 1, a base body 2, a light conversion layer 3 and light reflection glue 4, wherein the base body 2 is provided with a groove 21, the opening surface of the groove 21 is positioned on the top surface of the base body 2, the light-emitting element 1 is arranged in the groove 21 and is connected with the base body 2, the light reflection glue 4 is filled in the groove and covers the surface of the light-emitting element, the upper surface of the light conversion layer 3 is covered with the light reflection glue 4, the groove 21 is provided with three closed side surfaces 22 which surround the light-emitting element 1, the light conversion layer 3 and the light reflection glue 4, the groove 21 is provided with an exposed side surface which exposes the light conversion layer 3 and the light reflection glue 4, the exposed light conversion layer 3 is used as a light-emitting surface 23 of the side light-emitting device, namely, the exposed: the light-reflecting adhesive 4, the light conversion layer 3, the conductive layer 25 and the substrate 24, wherein the conductive layer 25 is a metal conductive layer.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, so that any modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. A side-emitting light device, comprising: the light-emitting device comprises at least one light-emitting element, a base body, a light conversion layer and light reflection glue, wherein the base body is provided with a groove, the opening surface of the groove is positioned on the top surface of the base body, the light-emitting element is arranged in the groove and connected with the base body, the light conversion layer is filled in the groove and covers the surface of the light-emitting element, the light reflection glue covers the upper surface of the light conversion layer, the groove is provided with three closed side surfaces and surrounds the light-emitting element, the light conversion layer and the light reflection glue, the groove is provided with an exposed side surface to expose the light conversion layer and the light reflection glue, and the exposed light conversion layer serves as a light-emitting surface of the side light-emitting device.
2. The side-emitting device of claim 1, wherein the base includes a substrate surrounding the three closed sides and a conductive layer laid on the bottom surface of the groove, and the light-emitting element is disposed on the upper surface of the conductive layer and connected to the base through the conductive layer.
3. A side-emitting luminaire of claim 2, wherein said recess is light reflective.
4. A side-emitting luminaire as claimed in claim 3, wherein said substrate is made of a light-reflecting material to make said recess light-reflecting.
5. The side-emitting device of claim 1, wherein the thickness of the light-emitting surface is 0.1-0.6 mm.
6. A side-emitting device according to claim 1, wherein the light conversion layer comprises at least one phosphor and at least one colloid.
7. A side lighting device according to claim 1, wherein said light emitting element comprises at least one of a face-up chip, a flip chip, and a vertical chip.
8. A method for manufacturing a side light-emitting device is characterized by comprising the following steps:
fixing at least one light-emitting element in a groove of a substrate, wherein the groove is provided with four closed side surfaces and an upward opening surface, and connecting the light-emitting element with the substrate;
filling a light conversion layer in the groove to cover the light emitting element in the light conversion layer;
covering the upper surface of the light conversion layer with light reflection glue;
and cutting the opening surface to obtain a side light-emitting device, wherein the groove is provided with an exposed side surface and three closed side surfaces to surround the light-emitting element, the light conversion layer and the light reflection glue are exposed from the exposed side surface, and the exposed light conversion layer is used as a light-emitting surface of the light-emitting device.
9. The method of claim 8, wherein cutting from the open face is specifically: and cutting along the parallel direction of the light-emitting element and perpendicular to the surface of the light-reflecting glue.
10. The method as claimed in claim 8, wherein the thickness of the light emergent surface is 0.1-0.6 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911416876.3A CN111129266A (en) | 2019-12-31 | 2019-12-31 | Side light-emitting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911416876.3A CN111129266A (en) | 2019-12-31 | 2019-12-31 | Side light-emitting device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111129266A true CN111129266A (en) | 2020-05-08 |
Family
ID=70506900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911416876.3A Pending CN111129266A (en) | 2019-12-31 | 2019-12-31 | Side light-emitting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111129266A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104515040A (en) * | 2013-09-26 | 2015-04-15 | 首尔半导体株式会社 | Light source module, fabrication method therefor, and backlight unit including the same |
| JP2016197760A (en) * | 2016-08-29 | 2016-11-24 | 日亜化学工業株式会社 | Light-emitting device |
| CN211828816U (en) * | 2019-12-31 | 2020-10-30 | 广东晶科电子股份有限公司 | Side light-emitting device |
-
2019
- 2019-12-31 CN CN201911416876.3A patent/CN111129266A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104515040A (en) * | 2013-09-26 | 2015-04-15 | 首尔半导体株式会社 | Light source module, fabrication method therefor, and backlight unit including the same |
| JP2016197760A (en) * | 2016-08-29 | 2016-11-24 | 日亜化学工業株式会社 | Light-emitting device |
| CN211828816U (en) * | 2019-12-31 | 2020-10-30 | 广东晶科电子股份有限公司 | Side light-emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4744178B2 (en) | Light emitting diode | |
| EP3188263B1 (en) | Light-emitting device | |
| EP2194589B1 (en) | Light emitting diode having a lead frame | |
| CN101226979B (en) | Semiconductor light-emitting device | |
| KR101389719B1 (en) | Semiconductor light-emitting device | |
| EP2551927B1 (en) | Light emitting device package | |
| TWI555239B (en) | Optoelectronic element and manufacturing method thereof | |
| KR101114719B1 (en) | Light emitting device and lighing system | |
| US8283675B2 (en) | Light emitting device | |
| EP2711995A1 (en) | Light-emitting device and method for manufacturing same | |
| US20110062470A1 (en) | Reduced angular emission cone illumination leds | |
| KR20130054040A (en) | Light emitting device and light apparatus having thereof | |
| KR20140091857A (en) | Light emitting device and light apparatus having thereof | |
| JP2015149471A (en) | light emitting device package | |
| EP2711994A2 (en) | Light emitting diode | |
| CN209896099U (en) | Light emitting element package and light irradiation device | |
| CN112540482A (en) | Backlight module, backlight module manufacturing method and display panel | |
| US8366307B2 (en) | Semiconductor light emitting device | |
| CN100388513C (en) | Light emitting device, package structure thereof and manufacturing method thereof | |
| CN211828816U (en) | Side light-emitting device | |
| JP5286122B2 (en) | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device | |
| JP5350947B2 (en) | Light emitting diode | |
| US11398589B2 (en) | Light emitting device package and light source device | |
| CN111129266A (en) | Side light-emitting device and manufacturing method thereof | |
| CN212934655U (en) | Packaging structure of ultraviolet light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |