CN111129234A - 一种hac电池用铜电镀栅线的掩膜结构及其制备方法 - Google Patents
一种hac电池用铜电镀栅线的掩膜结构及其制备方法 Download PDFInfo
- Publication number
- CN111129234A CN111129234A CN201911422617.1A CN201911422617A CN111129234A CN 111129234 A CN111129234 A CN 111129234A CN 201911422617 A CN201911422617 A CN 201911422617A CN 111129234 A CN111129234 A CN 111129234A
- Authority
- CN
- China
- Prior art keywords
- mask
- grid line
- copper electroplating
- ito
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 50
- 239000010949 copper Substances 0.000 title claims abstract description 50
- 238000009713 electroplating Methods 0.000 title claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000004050 hot filament vapor deposition Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000009501 film coating Methods 0.000 claims description 6
- 239000007888 film coating Substances 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 238000001259 photo etching Methods 0.000 abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 5
- 150000001879 copper Chemical class 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 65
- 239000010408 film Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种HAC电池用铜电镀栅线的掩膜结构,在电池片的两面TCO层表面制备氮化硅或者氧化硅或者氮化硅‑氧化硅的复合薄膜作为铜电镀栅线的掩膜,掩膜在铜电镀栅线制备完成后留在电池片的表面,不移除;掩膜与TCO的折射率相互匹配。本发明还公开一种HAC电池用铜电镀栅线的掩膜制备方法,在沉积了非晶硅的晶体硅片的两个表面各沉积ITO薄膜作为TCO层,再采用板式PECVD或热丝CVD方法在两个ITO薄膜表面各沉积氮化硅或者氧化硅或者氮化硅‑氧化硅复合薄膜作为铜电镀栅线的掩膜层,掩膜在铜电镀栅线制备完成后留在电池片的表面,不移除。本发明实现了以比光刻法工序短的方法制备镀铜栅线的掩膜,所得掩膜在栅线制备完成后保留在电池片表面改善TCO的减反射效果。
Description
技术领域
本发明属于太阳电池和半导体器件领域,涉及晶体硅太阳电池的技术,具体涉及一种HAC电池用铜电镀栅线的掩膜结构及其制备方法。
背景技术
目前,非晶硅/晶体硅异质结太阳电池(以下简称HAC)的金属栅线的技术路线主要有两条,一是采用丝网印刷结合烘干烧结的方法制备的银栅线,该技术以低温银浆作为原材料,制备技术路线简单、易于掌握,工序少,工艺成本低,但消耗大量的银浆;二是采用光刻结合电镀的技术制备铜栅线,该技术以铜和化学溶液作为主要原材料,但光刻过程需要使用到光刻胶且掩膜制备、曝光、去胶等工序很多,工艺难度大,工艺成本高,但作为栅线主材的铜成本低。综合比较,二者各有优缺点,在实际成本方面无明显的优劣。
对于铜电镀技术,如能简化其工序,以更有效、低成本的技术取得现有的光刻技术制备镀铜掩膜,其在成本方面将远低于银栅线技术,并且可节省大量的贵重原材料。
另外,HAC太阳电池表面的透明导电氧化层(transparentconductiveoxide以下简称TCO)主要是以铟的氧化物主材的物质,如锡掺杂三氧化铟(以下简称ITO),其要兼顾导电与减反射效果,导致其减反射效果无法做到最优,这也限制了HAC太阳电池性能的提高,如能通过复合膜层的方法提高其减反射效果,对HAC太阳电池性能的提升也是非常有意义的。
发明内容
针对现有技术中的不足与难题,本发明旨在提供一种一种HAC电池用铜电镀栅线的掩膜结构及其制备方法。
本发明通过以下技术方案予以实现:
一种HAC电池用铜电镀栅线的掩膜结构,在电池片的两面TCO层表面制备氮化硅或者氧化硅或者氮化硅-氧化硅的复合薄膜作为铜电镀栅线的掩膜,掩膜在铜电镀栅线制备完成后留在电池片的表面,不移除;掩膜与TCO的折射率相互匹配。
进一步地,采用氮化硅作为掩膜并采用ITO作为TCO材料;氮化硅的折射率为1.86~2.13、厚度为30nm~70nm;ITO的折射率为2.0~2.2、厚度为15nm~70nm。
优选地,ITO/氮化硅的折射率匹配为2.11/1.86。
进一步地,采用氧化硅作为掩膜并采用ITO作为TCO材料,氧化硅的折射率为1.4~1.5、厚度为60nm~150nm,ITO的折射率为2.0~2.2、厚度为15nm~70nm。
优选地,ITO/氧化硅的折射率匹配为2.08/1.46。
进一步地,采用氮化硅、氧化硅的复合膜层作为掩膜并采用ITO作为TCO材料;ITO的折射率为2.0~2.2、厚度为20nm~60nm;氮化硅的折射率为1.86~2.09、厚度为10nm~20nm;氧化硅的折射率为1.4~1.5、厚度为60nm~150nm。
优选地,ITO/氮化硅/氧化硅的折射率匹配为2.13/1.91/1.46。
本发明还提供了一种HAC电池用铜电镀栅线的掩膜制备方法,上述掩膜采用PECVD法或者热丝CVD法制备,在电池片的两面TCO层表面制备氮化硅或者氧化硅或者氮化硅-氧化硅的复合薄膜作为铜电镀栅线的掩膜;掩膜在铜电镀栅线制备完成后留在电池片的表面,不移除。
进一步地,掩膜的开槽采用在镀膜时在电池片表面放置硬质掩膜或者在镀膜结束后采用刻蚀剂刻蚀的方法完成;
进一步地,采用刻蚀剂刻蚀掩膜情况下只刻蚀掩膜材料,不刻蚀TCO材料;刻蚀栅线的宽度为0.1~80μm;铜电镀栅线的厚度为0.2~20μm,允许铜电镀栅线有不连续。
与现有技术相比,本发明有益效果包括:
(1)本发明实现了以比光刻法工序短的方法制备镀铜栅线的掩膜,所得掩膜在栅线制备完成后保留在电池片表面改善TCO的减反射效果。
(2)本发明该技术相比于光刻法可节省大量成本,并且适宜规模化生产。
附图说明
图1为本发明实施例一中ITO/氮化硅层的反射率曲线;
图2为本发明实施例二中ITO/氧化硅层的反射率曲线;
图3为本发明实施例三中ITO/氮化硅/氧化硅层的反射率曲线。
具体实施方式
下面结合附图,对本发明作进一步地说明。
实施例1氮化硅作为掩膜层
在沉积了非晶硅的晶体硅片的两个表面各沉积一层ITO薄膜作为TCO层,然后采用板式PECVD的方法在两个ITO薄膜表面各沉积一层的氮化硅作为铜电镀栅线的掩膜层;掩膜的开槽采用在镀膜时在电池片表面放置硬质掩膜;
氮化硅薄膜沉积的时候采用固态掩膜的方式形成线宽为40μm,线间距为400μm的细栅线图案,采用电镀法制备细栅线,铜电镀栅线的厚度为0.2~20μm,制备过程中允许铜电镀栅线有不连续;
氮化硅掩膜层在铜电镀栅线制备完成后留在电池片的表面,不移除。
对多组实例样品进行分析,其样品参数见表1。
所得ITO/氮化硅的减反射谱如附图1所示。
表1氮化硅掩膜结构的不同参数样品
结合表1和图1数据可以看出,以折射率为2.0~2.2(λ=600nm)、厚度为15nm~70nm的ITO薄膜作为TCO层,且以折射率为1.86~2.13(λ=600nm)、厚度为40nm~70nm的氮化硅作为掩膜层,所得掩膜在栅线制备完成后保留在电池片表面改善TCO的减反射效果,尤其以ITO/氮化硅的折射率匹配为2.11/1.86最佳。
实施例2氧化硅作为掩膜层
在沉积了非晶硅的晶体硅片的两个表面各沉积一层ITO薄膜作为TCO层,然后采用板式PECVD的方法在两个ITO薄膜表面各沉积一层的氧化硅作为铜电镀栅线的掩膜层;并在镀膜结束后采用刻蚀剂刻蚀的方法完成掩膜的开槽;
氧化硅薄膜沉积结束后采用丝网印刷法印刷氧化硅刻蚀剂对氧化硅膜进行刻蚀,该过程只刻蚀掩膜材料且不刻蚀TCO材料,形成线宽为30μm,线间距为1mm的细栅线图案,和线宽为1.0mm的主栅线图案,采用电镀法制备细栅线,铜电镀栅线的厚度为0.2~20μm,允许铜电镀栅线有不连续;
氧化硅掩膜层在铜电镀栅线制备完成后留在电池片的表面,不移除。
对多组实例样品进行分析,其样品参数见表2。
所得ITO/氧化硅的减反射谱如附图2所示。
表2氧化硅掩膜结构的不同参数样品
结合表2和图2数据可以看出,以折射率为2.0~2.2(λ=600nm)、厚度为15nm~70nm的ITO薄膜作为TCO层,且以折射率为1.4~1.5(λ=600nm)、厚度为60nm~150nm的氧化硅作为掩膜层,所得掩膜在栅线制备完成后保留在电池片表面改善TCO的减反射效果,尤其以ITO/氧化硅的折射率匹配为2.08/1.46最佳。
实施例3氮化硅-氧化硅作为掩膜层
在沉积了非晶硅的晶体硅片的两个表面各沉积一层ITO薄膜作为TCO层,然后采用热丝CVD的方法在两个ITO薄膜表面先各沉积一层的氮化硅薄膜、再各沉积一层氧化硅薄膜,作为铜电镀栅线的掩膜层;
薄膜沉积结束后采用丝网印刷法印刷氧化硅刻蚀剂对氧化硅膜进行刻蚀,形成线宽为10μm,线间距为1mm的细栅线图案,和线宽为1.0mm的主栅线图案,采用电镀法制备细栅线,铜电镀栅线的厚度为0.2~20μm,制备过程中允许铜电镀栅线有不连续;
对多组实例样品进行分析,其样品参数见表3。
所得ITO/氮化硅/氧化硅的减反射谱如附图3所示。
表3氮化硅-氧化硅复合掩膜结构的不同参数样品
综合表3和图3数据可以看出,以折射率为2.0~2.2(λ=600nm),厚度为20nm~60nm的ITO薄膜作为TCO层;以氧化硅折射率为1.4~1.5(λ=600nm),厚度为60nm~150nm,氮化硅的折射率为1.86~2.09(λ=600nm),厚度为10nm~20nm,形成的氮化硅-氧化硅复合薄膜作为掩膜层;所得掩膜在栅线制备完成后保留在电池片表面改善TCO的减反射效果,尤其以ITO/氮化硅/氧化硅的折射率匹配为2.13/1.91/1.46时效果最佳。
以上所述仅表达了本发明的优选实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形、改进及替代,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (10)
1.一种HAC电池用铜电镀栅线的掩膜结构,其特征在于:在所述电池片的两面TCO层表面制备氮化硅或者氧化硅或者氮化硅-氧化硅的复合薄膜作为铜电镀栅线的掩膜,所述掩膜在铜电镀栅线制备完成后留在电池片的表面,不移除;所述掩膜与所述TCO的折射率相互匹配。
2.根据权利要求1所述的一种HAC电池用铜电镀栅线的掩膜结构,其特征在于:采用氮化硅作为掩膜并采用ITO作为TCO材料;所述氮化硅的折射率范围为1.86~2.13,厚度为30nm~70nm;所述ITO的折射率为2.0~2.2,厚度为15nm~70nm。
3.根据权利要求2所述的一种HAC电池用铜电镀栅线的掩膜结构,其特征在于:所述ITO/氮化硅的折射率匹配为2.11/1.86。
4.根据权利要求1所述的一种HAC电池用铜电镀栅线的掩膜结构,其特征在于:采用氧化硅作为掩膜并采用ITO作为TCO材料,所述氧化硅的折射率范围1.4~1.5,厚度为60nm~150nm,所述ITO的折射率范围为2.0~2.2,厚度为15nm~70nm。
5.根据权利要求4所述的一种HAC电池用铜电镀栅线的掩膜结构,其特征在于:所述ITO/氧化硅的折射率匹配为2.08/1.46。
6.根据权利要求1所述的一种HAC电池用铜电镀栅线的掩膜结构,其特征在于:采用氮化硅、氧化硅的复合膜层作为掩膜并采用ITO作为TCO材料;所述氧化硅的折射率为1.4~1.5,厚度为60am~150am;所述氮化硅的折射率范围为1.86~2.09,厚度为10nm~20nm;所述ITO的折射率范围为2.0~2.2,厚度为20nm~60nm。
7.根据权利要求6所述的一种HAC电池用铜电镀栅线的掩膜结构,其特征在于:所述ITO/氮化硅/氧化硅的折射率匹配为2.13/1.91/1.46。
8.一种HAC电池用铜电镀栅线的掩膜制备方法,其特征在于:所述掩膜采用PECVD法或者热丝CVD法制备,在所述电池片的两面TCO层表面制备氮化硅或者氧化硅或者氮化硅-氧化硅的复合薄膜作为所述铜电镀栅线的掩膜;所述掩膜在所述铜电镀栅线制备完成后留在电池片的表面,不移除。
9.根据权利要求8所述的一种HAC电池用铜电镀栅线的掩膜制备方法,其特征在于:所述掩膜的开槽通过镀膜时在电池片表面放置硬质掩膜或者在镀膜结束后采用刻蚀剂刻蚀的方法完成。
10.根据权利要求8所述的一种HAC电池用铜电镀栅线的掩膜制备方法,其特征在于:采用刻蚀剂刻蚀掩膜情况下只刻蚀掩膜材料,不刻蚀TCO材料;刻蚀栅线的宽度为0.1~80μm;所述铜电镀栅线的厚度为0.2~20μm,允许所述铜电镀栅线有不连续。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911422617.1A CN111129234A (zh) | 2019-12-31 | 2019-12-31 | 一种hac电池用铜电镀栅线的掩膜结构及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911422617.1A CN111129234A (zh) | 2019-12-31 | 2019-12-31 | 一种hac电池用铜电镀栅线的掩膜结构及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111129234A true CN111129234A (zh) | 2020-05-08 |
Family
ID=70507863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911422617.1A Pending CN111129234A (zh) | 2019-12-31 | 2019-12-31 | 一种hac电池用铜电镀栅线的掩膜结构及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111129234A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810428A (zh) * | 2014-01-25 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | 一种用于制作硅基异质结电池片时结合层的处理方法 |
CN105140308A (zh) * | 2015-08-13 | 2015-12-09 | 常州天合光能有限公司 | 一种异质结太阳电池电镀铜电极的制备方法 |
CN106505128A (zh) * | 2015-09-06 | 2017-03-15 | 钧石(中国)能源有限公司 | 一种硅基异质结电池的制备方法 |
US20180019349A1 (en) * | 2016-07-13 | 2018-01-18 | Solarcity Corporation | Gridless photovoltaic cells and methods of producing a string using the same |
-
2019
- 2019-12-31 CN CN201911422617.1A patent/CN111129234A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810428A (zh) * | 2014-01-25 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | 一种用于制作硅基异质结电池片时结合层的处理方法 |
CN105140308A (zh) * | 2015-08-13 | 2015-12-09 | 常州天合光能有限公司 | 一种异质结太阳电池电镀铜电极的制备方法 |
CN106505128A (zh) * | 2015-09-06 | 2017-03-15 | 钧石(中国)能源有限公司 | 一种硅基异质结电池的制备方法 |
US20180019349A1 (en) * | 2016-07-13 | 2018-01-18 | Solarcity Corporation | Gridless photovoltaic cells and methods of producing a string using the same |
Non-Patent Citations (1)
Title |
---|
张亚非 等: "《集成电路制造技术》", 31 October 2018, 上海交通大学出版社 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI727728B (zh) | 薄膜光伏電池串聯結構及薄膜光伏電池串聯的製備工藝 | |
WO2022142054A1 (zh) | 一种N型TopCOn太阳能电池的背面金属电极及制备方法和电池 | |
WO2024045807A1 (zh) | 太阳电池及其制备工艺 | |
CN113140644A (zh) | 一种单面或双面太阳能电池图形化掩膜和太阳能电池的制备方法 | |
WO2023077772A1 (zh) | 太阳能电池及其制备方法 | |
WO2024045597A1 (zh) | 太阳电池及其制备方法 | |
JP5127925B2 (ja) | 薄膜太陽電池およびその製造方法 | |
CN102394258B (zh) | 薄膜太阳电池高导电性前电极的制备方法 | |
CN105140308A (zh) | 一种异质结太阳电池电镀铜电极的制备方法 | |
CN102969390A (zh) | 一种太阳能晶硅电池的开窗工艺 | |
CN107978645A (zh) | 一种n型晶硅电池的制备方法 | |
CN111129234A (zh) | 一种hac电池用铜电镀栅线的掩膜结构及其制备方法 | |
JP2002277605A (ja) | 反射防止膜の成膜方法 | |
CN101556973B (zh) | 薄膜光伏器件及复合电极 | |
CN112614941A (zh) | 一种降低死区面积的激光划线方法及其钙钛矿电池结构 | |
CN102709340A (zh) | 一种基于n型硅片倾斜金属接触结构的异质结太阳电池 | |
CN109804474A (zh) | 太阳能电池单元的制造方法 | |
CN215163230U (zh) | 一种单面或双面太阳能电池的图形化掩膜及太阳能电池 | |
CN114649438B (zh) | 一种n型hibc太阳电池的制备方法 | |
CN103413862A (zh) | 晶体硅太阳电池背面局域接触结构的制备方法 | |
CN112599678B (zh) | 一种金属电极激光刻线方法及基于其制备的钙钛矿电池 | |
CN115312624B (zh) | 一种背接触太阳能电池的制备方法 | |
CN114883424B (zh) | 一种基于丝网印刷制备全背接触晶硅异质结太阳电池结构的方法 | |
CN102522433B (zh) | 一种具有背反射层的电池片及其制备方法 | |
CN109791954A (zh) | 太阳能电池单元的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200508 |
|
RJ01 | Rejection of invention patent application after publication |