CN111128672B - Sectional type blade ion trap device - Google Patents
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- CN111128672B CN111128672B CN201911210425.4A CN201911210425A CN111128672B CN 111128672 B CN111128672 B CN 111128672B CN 201911210425 A CN201911210425 A CN 201911210425A CN 111128672 B CN111128672 B CN 111128672B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/34—Dynamic spectrometers
- H01J49/42—Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons
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- H01J49/4255—Device types with particular constructional features
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- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
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Abstract
A sectional type blade ion trap device comprises a first radio frequency electrode, a second radio frequency electrode, a first direct current electrode, a second direct current electrode, an upper fixed substrate and a lower fixed substrate, wherein the first radio frequency electrode and the second radio frequency electrode are used for providing a radio frequency electric field; the first direct current electrode and the second direct current electrode are used for providing an axial constraint electric field and compensating micro-motion of ions, and the upper fixing substrate and the lower fixing substrate are used for assembling and fixing the first radio frequency electrode, the second radio frequency electrode, the first direct current electrode and the second direct current electrode. The sectional type blade ion trap device provided by the invention is used for realizing the assembly and fixation of the first radio-frequency electrode, the second radio-frequency electrode, the first direct current electrode and the second direct current electrode on the basis of the upper fixing substrate and the lower fixing substrate, and a chemical bond is adopted between the upper fixing substrate and the lower fixing substrate, so that the sectional type blade ion trap device is convenient to install, reduces the assembly difficulty, is high in assembly precision, facilitates the replacement of components and reduces the system complexity.
Description
Technical Field
The invention relates to the field of ion trap devices, in particular to an ion trap device for a sectional type blade.
Background
An ion trap is a device that uses magnetic or radio frequency electric fields to confine single or multiple ions. Paul trap is widely used in the fields of mass spectrometry, precision measurement, quantum information and quantum chemistry at present.
In a Paul trap, an alternating radio frequency field subjects ions to an equivalent simple harmonic potential well in the radial direction, while an electrostatic field in the axial direction prevents ions from escaping in the axial direction, so that the ions can be bound in the trapping region. Early Paul traps used a pair of hyperboloid metal electrodes placed opposite each other as rf electrodes, which were difficult to fabricate, difficult to assemble, and had poor optical transparency. Later, a collection of Paul traps with improved structures, such as linear quadrupole rod traps, linear blade traps, micro-nano machined chip traps, surface traps, appeared. The advantages and disadvantages of the linear quadrupole rod trap are that the linear quadrupole rod trap is simple to manufacture but has poor constraint stability; the linear blade trap is relatively simple to manufacture, strong in binding and large in size; the chip trap electrodes are multiple, and can accurately operate multiple ions, but the processing difficulty is high, and the light transmittance is poor; the surface trap solves the problem of light permeability, but has high processing difficulty, shallow potential well and weak binding capacity to ions, and generally needs a low-temperature environment. Therefore, the linear blade trap has a simple structure and excellent performance, and is still the mainstream configuration in the ion trap system at present.
The existing linear blade traps are mainly divided into two types, one is a non-segmented blade trap, and the other is a segmented blade trap. For a blade trap with non-segmented dc electrodes, four electrodes can be made of metal, but additional two end cap electrodes must be used outside the trap to provide an axial confinement field, which increases assembly difficulty and system complexity. In addition, since the dc electrode can only apply one voltage, the voltage compensation for the micro-motion of ions and the ability to control the position of ions are insufficient for a one-dimensional ion chain. In contrast, for the blade trap with the segmented direct current electrodes, the segmented direct current electrodes can fully adjust the positions of ions, and meanwhile, the blade trap has the advantages of excellent potential trap depth and light permeability. However, the blades used in the current sectional type blade trap device all use ceramic sheets with gold plated after surface polishing, the processing success rate is low, the materials are fragile, the smoothness of the knife edge cannot be ensured, and the rough knife edge can cause stray electric fields and heating ions to move; the assembly adopts a mode of manually screwing screws to fix the blades to the frame, the error is even up to 50 mu m, and the characteristic size of the trap main body part is about 5 cm; when the wire is welded, a filter circuit, a wire and the like are required to be directly welded at the tail end of the blade or on the fixing screw, the operation difficulty is high, the repeatability is poor, the whole size is large, and batch assembly is not facilitated.
Disclosure of Invention
Technical problem to be solved
The invention aims to provide a sectional type blade ion trap device, which solves the problems of high assembly difficulty and system complexity of the conventional blade ion trap device.
(II) technical scheme
A sectional blade ion trap device comprises a first radio frequency electrode 1, a second radio frequency electrode 2, a first direct current electrode 3, a second direct current electrode 4, an upper fixed substrate 5 and a lower fixed substrate 6,
a first radio frequency electrode 1 and a second radio frequency electrode 2 for providing a radio frequency electric field;
a first direct current electrode 3 and a second direct current electrode 4 for providing an axial confinement electric field and compensating micro-motion of ions;
and the upper fixing substrate 5 and the lower fixing substrate 6 are used for assembling and fixing the first radio-frequency electrode 1, the second radio-frequency electrode 2, the first direct-current electrode 3 and the second direct-current electrode 4.
In the above scheme, the first radio frequency electrode 1, the second radio frequency electrode 2, the first direct current electrode 3 and the second direct current electrode 4 are pentagonal prism-shaped blades, the substrate is an insulating material polished into a blade shape, and the surface is a metal layer.
The insulating material edge material comprises glass, quartz, ceramics, sapphire and high polymer materials, and the metal layer comprises stainless steel, gold, silver, copper, nickel and titanium.
In the above scheme, the surface metal layers of the first radio frequency electrode 1 and the second radio frequency electrode 2 are all connected electrodes.
In the above scheme, the surface metal layers of the first direct current electrode 3 and the second direct current electrode 4 are segmented electrodes which are not communicated with each other in a segmented manner, and non-conductive dividing lines are arranged between the segmented electrodes.
Wherein, the surface metal layer of the first direct current electrode 3 and the second direct current electrode 4 is divided into five segments of segmented electrodes.
Different direct current bias voltages are applied to the segmented electrodes of the first direct current electrode 3 and the second direct current electrode 4, the first segmented electrode and the fifth segmented electrode which are applied with the direct current bias voltages and arranged on the first direct current electrode 3 and the second direct current electrode 4 provide axial binding electric fields, ions cannot escape from the direction of an axis, and the second segmented electrode, the third segmented electrode and the fourth segmented electrode which are applied with the direct current bias voltages are used for compensating micro-motion of the ions.
The surface metal layers of the first direct current electrode 3 and the second direct current electrode 4 can be further divided into three segmented electrodes, different direct current bias voltages are applied to the segmented electrodes of the first direct current electrode 3 and the second direct current electrode 4, the first segmented electrode and the third segmented electrode, applied with the direct current bias voltages, on the first direct current electrode 3 and the second direct current electrode 4 provide an axial binding electric field, ions cannot escape from the axis direction, and the second segmented electrode applied with the direct current bias voltages is used for compensating micro-motion of the ions.
In the above scheme, the upper fixing substrate 5 has a first fixing slot, a second fixing slot, a third fixing slot and a fourth fixing slot for fixing the bottom of the blade, and the fixing slots are respectively used for fixing the horizontal positions of the first radio-frequency electrode 1, the second radio-frequency electrode 2, the first direct-current electrode 3 and the second direct-current electrode 4.
In the above-mentioned scheme, the upper fixed substrate further includes a central trapping region, and the central trapping region is located on the symmetry axis of the first fixed slot, the second fixed slot, the third fixed slot, and the fourth fixed slot.
In the above solution, the side surfaces of the upper fixed substrate 5 and the lower fixed substrate 6 are provided with the light transmission angle 602 for transmitting light.
(III) advantageous effects
The invention provides a sectional type blade ion trap device, which is characterized in that the first radio-frequency electrode, the second radio-frequency electrode, the first direct current electrode and the second direct current electrode are assembled and fixed on the basis of an upper fixing substrate and a lower fixing substrate, the upper fixing substrate is provided with a fixing groove position for fixing the bottom of a blade and used for fixing the electrodes, and meanwhile, a chemical bond method is adopted between the upper fixing substrate and the lower fixing substrate, so that the adhesion strength can be ensured and the assembly precision of the blade can be ensured.
Drawings
FIG. 1 is a schematic diagram of a segmented blade ion trap arrangement according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a second DC electrode according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a bottom fixing plate according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a segmented blade ion trap device according to an embodiment of the present invention, which includes a first rf electrode 1, a second rf electrode 2, a first dc electrode 3, a second dc electrode 4, an upper fixed substrate 5 and a lower fixed substrate 6, wherein,
a first radio frequency electrode 1 and a second radio frequency electrode 2 for providing a radio frequency electric field;
a first direct current electrode 3 and a second direct current electrode 4 for providing an axial confinement electric field and compensating micro-motion of ions;
and the upper fixing substrate 5 and the lower fixing substrate 6 are used for assembling and fixing the first radio-frequency electrode 1, the second radio-frequency electrode 2, the first direct-current electrode 3 and the second direct-current electrode 4.
Specifically, the first radio frequency electrode 1, the second radio frequency electrode 2, the first direct current electrode 3 and the second direct current electrode 4 are pentagonal prism-shaped blades, the substrate is an insulating material polished into a blade shape, and the surface is a metal layer. The insulating material edge material comprises glass, quartz, ceramic, sapphire and high polymer materials, the metal layer comprises stainless steel, gold, silver, copper, nickel and titanium, and the thickness can be 10nm to 100 um. The insulating material of the blade is machined and ground into the shape of the blade, all the surfaces of the blade are optically polished, and the surface roughness is below 200 nm. The roughness and the broken edge at the knife edge can be ablated and melted by high-power laser, the obtained knife edge is smooth, round, uniform and straight, the curvature radius of the knife edge is less than 50um, and the influence of electric field noise on ions caused by the rough knife edge can be effectively reduced. Plating a layer of titanium and gold as a seed layer on all the side surfaces of all the blades except the upper bottom surface and the lower bottom surface by using magnetron sputtering coating or electron beam evaporation coating, and then thickening the gold layer to 8um +/-1 um by using an electroplating mode.
The upper fixing substrate 5 is provided with a first fixing slot position 501, a second fixing slot position 502, a third fixing slot position 503 and a fourth fixing slot position 504, which are used for fixing the positions of the first radio-frequency electrode 1, the second radio-frequency electrode 2, the first direct-current electrode 3 and the second direct-current electrode 4.
The upper fixing substrate 5 further comprises a central trapping region, and the central trapping region is located on the symmetrical central axis of the first fixing slot, the second fixing slot, the third fixing slot and the fourth fixing slot.
The upper fixing substrate 5 further includes a flat upper surface 601.
The surface metal layers of the first direct current electrode 3 and the second direct current electrode 4 are segmented electrodes which are not communicated in a segmented mode, and non-conductive dividing lines are arranged between the segmented electrodes. The surface metal layers of the first and second dc electrodes 3 and 4 are five or three,
the first radio-frequency electrode 1 and the second radio-frequency electrode 2 are symmetrically arranged around the central trapping area, the first direct-current electrode 3 and the second direct-current electrode 4 are symmetrically arranged around the central trapping area, and the included angle between the first radio-frequency electrode 1 and the adjacent first direct-current electrode 3 for light passing is 40 degrees and the included angle between the first radio-frequency electrode 1 and the second direct-current electrode 4 for light passing is 85 degrees, so that good light passing performance can be guaranteed.
The surface metal layers of the first radio-frequency electrode 1 and the second radio-frequency electrode 2 are all communicated electrodes and are connected with an external radio-frequency lead to provide a radio-frequency electric field. The surface metal layers of the first direct current electrode 3 and the second direct current electrode 4 need to be cut by laser, the surface of the metal layers is divided into five sections of sectional electrodes which are not communicated with each other, the laser cutting depth is larger than 10um, and the width is about 20um, so that different sections of the metal layers are completely cut through to form a dividing line. The laser cut was made around the circumference of the blade and formed into an electrode shape as shown in figure 2.
The surface metal layers of the first direct current electrode 3 and the second direct current electrode 4 can be further divided into three segmented electrodes, the first segmented electrode and the third segmented electrode which are applied with direct current bias voltage on the first direct current electrode 3 and the second direct current electrode 4 provide an axial binding electric field, so that ions cannot escape from the direction of an axis, and the second segmented electrode which is applied with direct current bias voltage is used for compensating micro-motion of the ions.
And the position 3mm away from the top on the direct current electrode knife edge is an electrode center and corresponds to the central prisoner's confinement region. The sizes of five sections of electrodes on the direct current electrode knife edge are respectively as follows: the length of the first segmented electrode 403 is 2500um, the length of the second segmented electrode 404 is 250um, the length of the third segmented electrode 405 is 250um, the length of the fourth segmented electrode 406 is 250um, and the length of the fifth segmented electrode 407 is 8670 um.
Different direct current bias voltages are applied to different sections of the same direct current electrode, wherein the first section electrode and the fifth section electrode which are applied with the direct current bias voltages on the first direct current electrode 4 and the second direct current electrode 4 provide axial binding electric fields, so that ions cannot escape from the axial direction, and the second section electrode, the third section electrode and the fourth section electrode which are applied with the direct current bias voltages are used for compensating micro-motion of the ions.
The upper fixing substrate 5 and the lower fixing substrate 6 adopt silicon wafers with polished two sides as materials, the two sides of the silicon wafers are oxidized, and the thickness of the oxide layer is 300 nm. The oxide layer can provide a bonding surface, and the resistance can be increased, so that the coupling between the electrodes is effectively reduced.
The upper fixing substrate 5 and the lower fixing substrate 6 may also be made of different materials, such as glass, ceramic, quartz, polymer materials, silicon wafers, sapphire, and the like.
The upper fixing substrate 5 is cut into the shape shown in fig. 3 by laser cutting, wherein the shape of the groove is consistent with the shape of the bottom of the blade, thereby ensuring that the blade can be smoothly put in. The relative positions and angles of the four slots determine the positions and angles between the blades, further determine the distance from the center of a potential well of the ion trap to the electrode and the radial direction of a main shaft, and the side surfaces of the upper fixing substrate 5 and the lower fixing substrate 6 are also provided with light transmission angles 602 for transmitting light. The length of the four groove vertexes from the central axis on the upper fixed substrate 5 is 50-1000um, the length of the rectangle formed by the four vertexes is 100-2000um, and the width is 30-2000um, in the embodiment of the present invention, the length of the four groove vertexes from the central axis is 150um, the length of the rectangle formed by the four vertexes is 400um, and the width is 300 um. Too small a distance not only affects the incidence of laser light but also causes ion heating, and too large a distance causes the potential well to become shallow, requiring a larger driving voltage.
And adhering the two silicon wafers, and then carrying out laser cutting again to obtain the double-layer fixed substrate. In order to ensure that the flatness of the bottom of the groove position is not affected when the silicon wafers are adhered, a chemical bond method can be adopted, namely, a diluted water glass solution is uniformly coated on the lower fixing substrate 6, the upper fixing substrate 5 is attached to the lower fixing substrate 6 and is firmly pressed, and a silane bond is formed between the two fixing plates after the silicon wafers are kept still for about 10 days. By adopting the method, the adhesion strength can be ensured, the surface flatness of the bottom of the slot position is not affected, and the assembly precision of the blade is ensured.
When the blade is assembled, a small amount of vacuum glue is dripped into the groove position, the blade is placed into the groove position and is compressed under a microscope, and the bottom of the blade and the surface of the groove position are very smooth and can be tightly attached, so that the vertical axial installation precision of the blade is ensured to be below 5 um. All the blades are put in turn and the position is adjusted under the microscope. Because the trench exists, the horizontal installation precision of the blade can reach 20um, and the assembly can be very conveniently completed by matching with a microscope. If a deeper slot is adopted, the horizontal installation accuracy can still be improved. Compared with the existing installation process, the installation method adopted by the invention has the advantages of time saving, labor saving and high precision.
The assembled blade and fixed substrate device can be fixed on the filter circuit board. The back parts of the first direct current electrode 3 and the second direct current electrode 4 are provided with terminals of five segmented electrodes, and the terminals can be used for connecting the segmented electrodes with external leads. Specifically, the terminals on the electrodes are connected to the filter circuit board as a filter circuit and a lead wire to be connected to an external power supply using a wire bonding machine using a 25um or 50um thick metal wire, respectively. The whole back of the first radio frequency electrode 1 and the second radio frequency electrode 2 can be used for external lead connection and provide radio frequency field. Compared with the traditional method, the wire connection adopted by the invention avoids the difficulty of wire welding, reduces the complexity of wire arrangement in the trap, adopts the mature and reliable wire bonding technology, is easy to copy, can conveniently design and use the filter circuit board, and has more standardized manufacturing process.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (11)
1. A sectional blade ion trap device is characterized in that the device comprises a first radio frequency electrode (1), a second radio frequency electrode (2), a first direct current electrode (3), a second direct current electrode (4), an upper fixed substrate (5) and a lower fixed substrate (6),
a first radio frequency electrode (1) and a second radio frequency electrode (2) for providing a radio frequency electric field;
the first direct current electrode (3) and the second direct current electrode (4) are used for providing an axial constraint electric field and compensating micro-motion of ions;
the upper fixing substrate (5) and the lower fixing substrate (6) are used for realizing the assembly and the fixation of the first radio-frequency electrode (1), the second radio-frequency electrode (2), the first direct current electrode (3) and the second direct current electrode (4);
the upper fixing substrate (5) is provided with a slot position for fixing the bottom of the blade, the slot position comprises a first fixing slot position (501), a second fixing slot position (502), a third fixing slot position (503) and a fourth fixing slot position (504), the first fixing slot position, the second fixing slot position, the third fixing slot position and the fourth fixing slot position are respectively used for fixing a first radio-frequency electrode (1), a second radio-frequency electrode (2), a first direct-current electrode (3) and a second direct-current electrode (4), and the shape of the slot position is consistent with the shape of the bottom of the blade; the lower fixing substrate (6) is fixed on one side of the upper fixing substrate (5).
2. The segmented blade ion trap device according to claim 1, wherein the first rf electrode (1), the second rf electrode (2), the first dc electrode (3) and the second dc electrode (4) are pentagonal prism shaped blades and the substrate is an insulating material polished to a blade shape with a metal layer on the surface.
3. The segmented blade ion trap device according to claim 2, wherein said insulating material comprises glass, quartz, ceramic, sapphire, and polymer materials, and said metal layer comprises stainless steel, gold, silver, copper, nickel, and titanium.
4. The segmented blade ion trap device of claim 1 wherein the surface metal layers of the first and second rf electrodes (1, 2) are fully interconnected electrodes.
5. The segmented blade ion trap device according to claim 1, wherein the surface metal layers of the first direct current electrode (3) and the second direct current electrode (4) are segmented electrodes which are not connected with each other in a segmented mode, and non-conductive dividing lines are arranged between the segmented electrodes.
6. The segmented blade ion trap device according to claim 5, wherein the surface metal layer of the first and second DC electrodes (3, 4) is divided into five segmented electrodes.
7. The segmented blade ion trap device according to claim 6, wherein different DC bias voltages are applied to the segmented electrodes of the first DC electrode (3) and the second DC electrode (4), the first segmented electrode and the fifth segmented electrode applied with the DC bias voltages on the first DC electrode (3) and the second DC electrode (4) provide an axial confinement electric field so that ions cannot escape from the axial direction, and the second, the third and the fourth segmented electrodes applied with the DC bias voltages are used for compensating micro-motion of the ions.
8. The segmented blade ion trap device according to claim 5, wherein the surface metal layer of the first and second DC electrodes (3, 4) is divided into three segmented electrodes.
9. The segmented blade ion trap device according to claim 8, wherein different DC bias voltages are applied to the segmented electrodes of the first DC electrode (3) and the second DC electrode (4), the first segmented electrode and the third segmented electrode applied with the DC bias voltages on the first DC electrode (3) and the second DC electrode (4) provide an axial confinement electric field so that ions cannot escape from the direction of the axis, and the second segmented electrode applied with the DC bias voltage is used for compensating micro-motion of the ions.
10. The segmented blade ion trap device according to claim 1, wherein the upper fixed substrate further comprises a central trapping region (7), and the central trapping region (7) is located on a symmetry axis of the first fixed slot, the second fixed slot, the third fixed slot, and the fourth fixed slot.
11. The segmented blade ion trap device according to claim 1 wherein the sides of the upper and lower fixed substrates (5, 6) are provided with light transmission angles (602) for transmitting light.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103714878A (en) * | 2014-01-15 | 2014-04-09 | 中国科学院武汉物理与数学研究所 | Integrated ion trapping device |
| CN108806817A (en) * | 2018-06-04 | 2018-11-13 | 中国科学院武汉物理与数学研究所 | A kind of integrated blade trap device for ion-beam cleaning |
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| WO2010023873A1 (en) * | 2008-08-29 | 2010-03-04 | 株式会社日立ハイテクノロジーズ | Mass spectrometer |
| WO2017112938A1 (en) * | 2015-12-23 | 2017-06-29 | University Of Maryland, College Park | Active stabilization of ion trap radiofrequency potentials |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103714878A (en) * | 2014-01-15 | 2014-04-09 | 中国科学院武汉物理与数学研究所 | Integrated ion trapping device |
| CN108806817A (en) * | 2018-06-04 | 2018-11-13 | 中国科学院武汉物理与数学研究所 | A kind of integrated blade trap device for ion-beam cleaning |
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