CN111106802B - 5G radio frequency front end power switching chip compatible with APT and ET modes - Google Patents
5G radio frequency front end power switching chip compatible with APT and ET modes Download PDFInfo
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- CN111106802B CN111106802B CN201911302298.0A CN201911302298A CN111106802B CN 111106802 B CN111106802 B CN 111106802B CN 201911302298 A CN201911302298 A CN 201911302298A CN 111106802 B CN111106802 B CN 111106802B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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Abstract
The invention discloses a 5G radio frequency front end power supply switching chip compatible with APT and ET modes, which comprises a first switch M1, a second switch M2 and a third switch M3, wherein the first switch M1, the second switch M2 and the third switch M3 respectively comprise a high power supply end, a low power supply end and a control end; a control terminal of the third switch M3 and a control terminal of the first switch M1 are respectively used for loading a control voltage, a high power supply terminal of the third switch M3 is connected with a control terminal of the second switch M2, and a low power supply terminal of the third switch M3 is connected with the ground; the high power end of the second switch M2 is used for power loading, and the low power end of the second switch M2 is connected with the high power end of the first switch M1 and used as an output end; the lower power terminal of the first switch M1 is grounded. The power supply switching chip provided by the invention realizes the compatibility of the most common APT power supply mode and ET power supply mode in the 5G radio frequency power amplifier.
Description
Technical Field
The invention relates to the field of power supplies, in particular to a 5G radio frequency front-end power supply switching chip compatible with APT and ET modes.
Background
The radio frequency power amplifier is an important component of the radio frequency front end, and the electronic terminal can obtain higher radio frequency output power through the radio frequency power amplifier. In order to ensure that the working efficiency of the power supply is better under higher radio frequency output power, the voltage of the power amplifier can be adjusted in real time to adapt to the power change of the radio frequency amplifier, so that the power consumption of the radio frequency power amplifier is reduced. Two most commonly used voltage management systems in the industry are an Average Power Tracking (APT) technology and an Envelope Tracking (ET) technology, which can track the Power change of a radio frequency Power amplifier, adjust the voltage of the Power amplifier in real time, and further improve the working efficiency. The key performance goal of the fifth generation mobile communication technology (5G) is that the transmission rate is greatly increased compared with that of 4G, which means the expansion of the frequency spectrum bandwidth, which puts more stringent requirements on the design of the 5G radio frequency amplifier.
In a narrow-band communication system, the memory effect of the power amplifier is weak, and the nonlinear characteristic of the power amplifier is not considered when analyzing the nonlinear characteristic. However, in the 5G broadband communication system, as the bandwidth of the input signal increases, the memory effect of the amplifier tends to be significant and cannot be ignored. One of the important sources of memory effect of the amplifier is that the supply voltage of the PA cannot be kept constant, but in relation to the previous time state, the memory effect starts to appear, the wider the bandwidth the more obvious.
In a 5G APT system, a decoupling capacitor with a large capacitance value needs to be loaded on a power supply voltage, and the jitter of the power supply voltage is filtered out, so that the damage of the memory effect on the linearity of a PA (power amplifier) is weakened. However, in the 5G ET system, the linearity of the PA is guaranteed by a mapping function or a Digital Pre-Distortion (DPD) technique, but the envelope tracker module (envelope tracker) has a strict requirement on the capacitive load of the PA end.
Disclosure of Invention
The invention aims to provide a 5G radio frequency front-end power switching chip compatible with APT and ET modes, which is compatible with two most commonly used power management systems in a 5G radio frequency power amplifier.
In order to achieve the purpose of the present invention, the 5G rf front-end power switching chip compatible with the APT and ET modes provided herein includes the following two structures:
the first 5G radio frequency front end power supply switching chip compatible with the APT and ET modes comprises a first switch M1, a second switch M2 and a third switch M3, wherein the first switch M1, the second switch M2 and the third switch M3 respectively comprise a high power supply end, a low power supply end and a control end; a control terminal of the third switch M3 and a control terminal of the first switch M1 are respectively used for loading a control voltage, a high power supply terminal of the third switch M3 is connected with a control terminal of the second switch M2, and a low power supply terminal of the third switch M3 is connected with the ground; the high power end of the second switch M2 is used for power loading, and the low power end of the second switch M2 is connected with the high power end of the first switch M1 and used as an output end; the lower power terminal of the first switch M1 is grounded.
The second 5G radio-frequency front-end power switching chip compatible with APT and ET modes comprises a driving circuit, a switch M4 and a resistor R4, wherein the switch M4 comprises a high power supply end, a low power supply end and a control end, the input end of the driving circuit loads control voltage, the output end of the driving circuit is connected with the control end of the switch M4, the high power supply end of the switch M4 serves as the output end, and the low power supply end of the switch M4 is grounded; the resistor R4 is connected in series between the high and low power supply terminals of the switch M4.
The invention has the beneficial effects that: the power supply switching chip provided by the invention can switch a larger decoupling capacitor under an APT mechanism; in the ET operating regime, the switch is configured to suspend the APT decoupling capacitor so as to reduce the capacitive load of the envelope tracker, where the capacitive load of the envelope tracker module is only the ET capacitance; the compatibility of the most common APT power supply mode and ET power supply mode in the 5G radio frequency power amplifier is realized.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a schematic circuit diagram of a power switching chip according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a power switching chip according to a second embodiment of the present invention;
fig. 3-4 are schematic circuit diagrams of a power switching chip according to a third embodiment of the present invention;
fig. 5-8 are schematic circuit diagrams of a power switching chip according to a fourth embodiment of the invention;
fig. 9 is a schematic circuit diagram of a power switching chip according to a fifth embodiment of the present invention;
in the drawings: 1-a drive circuit.
Detailed Description
Exemplary embodiments will now be described more fully with reference to the accompanying drawings. The exemplary embodiments, however, may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. In the drawings, the size of some of the elements may be exaggerated or distorted for clarity. The same reference numerals denote the same or similar structures in the drawings, and thus detailed descriptions thereof will be omitted.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, etc. In other instances, well-known structures, methods, or operations are not shown or described in detail to avoid obscuring aspects of the disclosure.
Example one
The chip for switching the power supply of the 5G rf front end compatible with the APT and ET modes provided by this embodiment includes a first switch M1, a second switch M2 and a third switch M3, where the first switch M1, the second switch M2 and the third switch M3 respectively include a high power supply terminal, a low power supply terminal and a control terminal; as shown in fig. 1, the connection relationship between the switches is: the control end of the third switch M3 and the control end of the first switch M1 are respectively used for loading a control voltage APT _ Enable, the high power end of the third switch M3 is connected with the control end of the second switch M2, and the low power end of the third switch M3 is grounded; the high power end of the second switch M2 is used for power loading, and the low power end of the second switch M2 is connected with the high power end of the first switch M1 and is used as an output end to be connected with a lower circuit; the lower power terminal of the first switch M1 is grounded.
Example two
The 5G radio frequency front end power switching chip compatible with the APT and ET modes provided by this embodiment includes all the technical features of the first embodiment, and further includes a resistor R1 and a capacitor C1. As shown in fig. 2, the control power applied to the control terminal of the first switch M1 is grounded via a resistor R1 and a capacitor C1.
The resistor R1 and the capacitor C1 ensure the stability of the voltage loaded on the control end of the first switch M1 and reduce the influence of voltage fluctuation.
EXAMPLE III
The 5G rf front-end power switching chip compatible with the APT and ET modes provided in this embodiment includes all the technical features of the first and second embodiments, and further includes a resistor R2 connected in series between the high power supply terminal and the control terminal of the second switch M1, as shown in fig. 3 and fig. 4, respectively.
Example four
The 5G rf front-end power switching chip compatible with the APT and ET modes provided in this embodiment includes all the technical features of the first, second and third embodiments, and further includes a capacitor C2, and the control power loaded on the control terminal of the third switch M3 is grounded through the capacitor C2, as shown in fig. 5, 6, 7 and 8, respectively.
EXAMPLE five
The 5G radio frequency front-end power switching chip compatible with the APT and ET modes provided by this embodiment includes a driving circuit 1, a switch M4 and a resistor R4, where the switch M4 includes a high power supply terminal, a low power supply terminal and a control terminal; as shown in fig. 9, the specific circuit connection relationship is: the input end of the drive circuit 1 loads a control voltage APT _ Enable, and the output end is connected with the control end of the switch M4; the high power end of the switch M4 is used as the output end, and the low power end of the switch M4 is grounded; resistor R4 is connected in series between the high and low power supply terminals of switch M4.
The driving circuit 1 described in the present embodiment may employ any circuit such as an amplifier.
In the first to fourth embodiments, when the 5G rf front-end power switching chip compatible with the APT and ET modes is used, the capacitor C3 and the capacitor C4 are externally connected, the capacitor C3 is a 5GPAT capacitor, and the capacitor C4 is an ET capacitor. The working modes comprise an APT working mode and an ET working mode, when the power amplifier works, working voltage is loaded on the high power supply end of the second switch M2 through the power management chip, a control voltage APT _ Enable is loaded on the control end of the first switch M1 and the control end of the third switch M3, when the APT _ Enable voltage is set to be high, the first switch M1 and the third switch M3 are switched on, the node 1 and the node 2 are pulled to be low level (ground), the second switch M2 is switched off, the 5G APT capacitor becomes a decoupling capacitor of PA voltage supply, power supply voltage ripples are filtered, the memory effect of the 5G power amplifier is eliminated, and the linearity is improved. When the APT _ Enable voltage is set low, the ET operation mode is selected, the first switch M1 and the third switch M3 are turned off, the node 2 is at high level (power supply voltage Vcc), the second switch M2 is turned on, and the node 1 is pulled to high level (power supply voltage Vcc). Because there is no voltage difference across the 5G APT capacitor plates, it is not used as a load for the envelope tracker. In the ET operating mode, the capacitive load of the envelope tracker is only the ET capacitance.
The control voltage APT _ Enable may be directly loaded on the control terminals of the first switch M1 and the third switch M3, or may be loaded on the control terminals of the first switch M1 and the third switch M3 through a resistor R3; the resistor R3 is used to divide and limit the voltage, so as to avoid the voltage loaded on the control terminals of the first switch M1 and the third switch M3 from affecting the first switch M1 and the third switch M3.
When the 5G radio frequency front end power switching chip compatible with the APT and ET modes provided in the fifth embodiment is used, the capacitor C3 and the capacitor C4 are externally connected, the capacitor C3 is a 5GPAT capacitor, and the capacitor C4 is an ET capacitor. The working modes comprise an APT working mode and an ET working mode, when the circuit works, a working voltage is loaded on a high power supply end of the switch M4 through the power management chip, a control voltage APT _ Enable is loaded on an input end of the driving circuit, when the APT _ Enable voltage is set high, the switch M4 is switched on for the APT working mode, the node 1 is pulled to be low level (ground), the 5G APT capacitor becomes a decoupling capacitor of PA voltage supply, power supply voltage ripples are filtered, the memory effect of the 5G power amplifier is eliminated, and the linearity is improved. When the APT _ Enable voltage is set to be low and is in an ET working mode, the switch M4 is turned off, the 5G APT capacitor is connected with the large resistor R1 in series, and the capacitive load of the envelope tracker mainly consists of the ET capacitor.
The first switch M1, the second switch M2, the third switch M3, and the switch M4 may be any controllable switch, such as a transistor, a field effect transistor, or a silicon controller.
The present disclosure has been described in terms of the above-described embodiments, which are merely exemplary of the implementations of the present disclosure. It must be noted that the disclosed embodiments do not limit the scope of the disclosure. Rather, variations and modifications are possible within the spirit and scope of the disclosure, and these are all within the scope of the disclosure.
Claims (6)
1. A compatible APT and ET mode's 5G radio frequency front end power switches chip which characterized in that: the chip comprises a first switch M1, a second switch M2, a third switch M3, a capacitor C3 and a capacitor C4, wherein the first switch M1, the second switch M2 and the third switch M3 respectively comprise a high power supply end, a low power supply end and a control end; a control terminal of the third switch M3 and a control terminal of the first switch M1 are respectively used for loading a control voltage, a high power supply terminal of the third switch M3 is connected with a control terminal of the second switch M2, and a low power supply terminal of the third switch M3 is connected with the ground; the high power end of the second switch M2 is used for power loading, and the low power end of the second switch M2 is connected with the high power end of the first switch M1 and used as an output end; the low power terminal of the first switch M1 is grounded; the first plate of the capacitor C3 is connected with the high power supply end of the second switch M2, and the second plate is connected with the low power supply end of the second switch M2; the first plate of the capacitor C4 is connected with the high power supply end of the second switch M2, and the second plate is grounded; the capacitor C3 is a 5GPAT capacitor.
2. The APT and ET compatible 5G radio frequency front end power switching chip of claim 1, wherein: the control circuit also comprises a resistor R1 and a capacitor C1, and a control power supply loaded on the control end of the first switch M1 is grounded through the resistor R1 and the capacitor C1.
3. The APT and ET compatible 5G RF front end power switching chip according to any of claims 1-2, wherein: and a resistor R2 connected in series between the high power supply terminal and the control terminal of the second switch M1.
4. The APT and ET compatible 5G RF front end power switching chip according to any of claims 1-2, wherein: the control circuit also comprises a capacitor C2, and a control power supply loaded on the control end of the third switch M3 is grounded through the capacitor C2.
5. The APT and ET compatible 5G radio frequency front end power switching chip of claim 3, wherein: the control circuit also comprises a capacitor C2, and a control power supply loaded on the control end of the third switch M3 is grounded through the capacitor C2.
6. A compatible APT and ET mode's 5G radio frequency front end power switches chip which characterized in that: the switching chip comprises a driving circuit, a switch M4, a resistor R4, a capacitor C3 and a capacitor C4, wherein the switch M4 comprises a high power supply end, a low power supply end and a control end, the input end of the driving circuit loads a control voltage, the output end of the driving circuit is connected with the control end of the switch M4, the high power supply end of the switch M4 serves as the output end, and the low power supply end of the switch M4 is grounded; the resistor R4 is connected in series between the high power supply end and the low power supply end of the switch M4; the first plate of the capacitor C3 and the first plate of the capacitor C4 are connected with a power supply, and the second plate of the capacitor C3 is connected with a power supply end of the switch M4; the second plate of the capacitor C4 is grounded; the capacitor C3 is a 5GPAT capacitor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911302298.0A CN111106802B (en) | 2019-12-17 | 2019-12-17 | 5G radio frequency front end power switching chip compatible with APT and ET modes |
| PCT/CN2019/127951 WO2021120242A1 (en) | 2019-12-17 | 2019-12-24 | 5g radio frequency front end power supply switching chip compatible with apt and et modes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911302298.0A CN111106802B (en) | 2019-12-17 | 2019-12-17 | 5G radio frequency front end power switching chip compatible with APT and ET modes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111106802A CN111106802A (en) | 2020-05-05 |
| CN111106802B true CN111106802B (en) | 2021-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911302298.0A Active CN111106802B (en) | 2019-12-17 | 2019-12-17 | 5G radio frequency front end power switching chip compatible with APT and ET modes |
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| CN (1) | CN111106802B (en) |
| WO (1) | WO2021120242A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103313363A (en) * | 2012-03-08 | 2013-09-18 | 宏达国际电子股份有限公司 | Apparatus and method for power management |
| CN103684271A (en) * | 2013-11-22 | 2014-03-26 | 小米科技有限责任公司 | Device and method for improving efficiency of radio frequency power amplifier |
| CN107425873A (en) * | 2017-08-31 | 2017-12-01 | 锐石创芯（厦门）科技有限公司 | Radio frequency front-end device and the electronic equipment for including it |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9041365B2 (en) * | 2011-12-01 | 2015-05-26 | Rf Micro Devices, Inc. | Multiple mode RF power converter |
| US9225289B2 (en) * | 2014-03-23 | 2015-12-29 | Paragon Communications Ltd. | Method and apparatus for partial envelope tracking in handheld and wireless computing devices |
| US9525384B2 (en) * | 2014-09-02 | 2016-12-20 | Samsung Electronics Co., Ltd | Method and apparatus for supplying power to a radio frequency power amplifier |
| CN104486845A (en) * | 2014-12-19 | 2015-04-01 | 北京中科汉天下电子技术有限公司 | Multimode multi-frequency communication system |
| US9596110B2 (en) * | 2015-04-02 | 2017-03-14 | Futurewei Technologies, Inc. | Open loop digital PWM envelope tracking system with dynamic boosting |
| JP2017005641A (en) * | 2015-06-16 | 2017-01-05 | 株式会社村田製作所 | Power Amplifier Module |
| TWI645277B (en) * | 2017-06-19 | 2018-12-21 | 瑞昱半導體股份有限公司 | Envelope-tracking power supply modulator |
| US10523120B2 (en) * | 2017-09-07 | 2019-12-31 | Samsung Electronics Co., Ltd. | Supply modulator for power amplifier |
| JP2019103130A (en) * | 2017-12-07 | 2019-06-24 | 株式会社村田製作所 | Transmission unit |
-
2019
- 2019-12-17 CN CN201911302298.0A patent/CN111106802B/en active Active
- 2019-12-24 WO PCT/CN2019/127951 patent/WO2021120242A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103313363A (en) * | 2012-03-08 | 2013-09-18 | 宏达国际电子股份有限公司 | Apparatus and method for power management |
| CN103684271A (en) * | 2013-11-22 | 2014-03-26 | 小米科技有限责任公司 | Device and method for improving efficiency of radio frequency power amplifier |
| CN107425873A (en) * | 2017-08-31 | 2017-12-01 | 锐石创芯（厦门）科技有限公司 | Radio frequency front-end device and the electronic equipment for including it |
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| Publication number | Publication date |
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| CN111106802A (en) | 2020-05-05 |
| WO2021120242A1 (en) | 2021-06-24 |
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