CN111101181A - Porous anodic aluminum oxide cooling material, preparation method and application of porous anodic aluminum oxide cooling material in solar cell panel cooling - Google Patents
Porous anodic aluminum oxide cooling material, preparation method and application of porous anodic aluminum oxide cooling material in solar cell panel cooling Download PDFInfo
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- CN111101181A CN111101181A CN201911328904.6A CN201911328904A CN111101181A CN 111101181 A CN111101181 A CN 111101181A CN 201911328904 A CN201911328904 A CN 201911328904A CN 111101181 A CN111101181 A CN 111101181A
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- 238000001816 cooling Methods 0.000 title claims abstract description 79
- 239000000463 material Substances 0.000 title claims abstract description 72
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 49
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 30
- 239000003792 electrolyte Substances 0.000 claims description 20
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 14
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 229940117975 chromium trioxide Drugs 0.000 claims description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 6
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 claims description 6
- 238000004090 dissolution Methods 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 4
- QYHFIVBSNOWOCQ-UHFFFAOYSA-N selenic acid Chemical compound O[Se](O)(=O)=O QYHFIVBSNOWOCQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000006056 electrooxidation reaction Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 238000001392 ultraviolet--visible--near infrared spectroscopy Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
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- C—CHEMISTRY; METALLURGY
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- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
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Abstract
The invention discloses a porous anodic aluminum oxide cooling material, a preparation method and application thereof in solar cell panel cooling.
Description
Technical Field
The invention belongs to the technical field of new energy materials, and particularly relates to a porous anodic aluminum oxide cooling material, a preparation method and application thereof.
Background
The photovoltaic technology is one of the important measures for solving the energy and environmental problems at present, but the solar power generation has the problems of high cost and low conversion efficiency. The relative power generation efficiency of the crystalline silicon solar cell which accounts for the largest market is reduced by about 0.45 percent when the working temperature of the crystalline silicon solar cell rises by 1 percent, and the aging speed of the array is doubled when the working temperature of the crystalline silicon solar cell increases by 10 percent. Due to the change of the external environment temperature and the heat generated by the plate in the working process, the temperature of the plate is increased and can generally reach 50-55 ℃ or higher, so that the generating power of the solar cell panel is reduced, and the service life of the array is shortened. Therefore, the research on an economical and effective solar panel cooling method is urgently needed to improve the power generation efficiency of the solar panel and delay the aging speed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a porous anodic aluminum oxide cooling material, a preparation method and application thereof in solar cell panel cooling.
The invention is realized by the following technical scheme:
a porous anodized aluminum cooling material having the following characteristics: a reflectance of 0.5 to 0.7 at 0.3 to 0.375 microns, a reflectance of 0.85 to 0.95 at 1.1 to 2.5 microns, and a transmittance of about 100% at 0.375 to 1.1 microns.
The preparation method comprises the following steps:
taking pure aluminum as an anode and a graphite carbon rod as a cathode, placing the anode and the cathode in a container filled with acid solution with the concentration of 2-20 wt% as electrolyte, applying constant voltage of 10-60V or periodic current of 0-200mA to two ends of the electrode, continuously stirring the electrolyte by adopting a magnetic stirrer, reacting for 2-5h at the temperature of 0-5 ℃, and taking out reactants;
step two, removing an oxide film on the surface of the sample by using a mixed solution containing 3 wt% of chromium trioxide and 5 vol% of phosphoric acid;
thirdly, carrying out a second reaction on the reactant with the oxide film removed under the experimental conditions of the first step for 15-25 h, and forming micropores with different pore sizes on the surface of the pure aluminum along with continuous oxidation of the pure aluminum in the electrolyte and continuous dissolution of the oxide film;
and step four, removing unreacted pure aluminum by using a mixed solution prepared from 5 vol% hydrochloric acid and 1M copper chloride after the reaction is finished, and finally reaming in a 5 vol% phosphoric acid solution for 20-40min at the temperature of 30 ℃ to obtain the porous anodic aluminum oxide cooling material.
In the above technical solution, in the step one, the acid solution is oxalic acid, phosphoric acid, selenic acid or sulfuric acid.
In the above technical solution, in the step one, the stirring speed of the magnetic stirrer is 800-.
In the above technical solution, in the step one, the constant voltage is preferably 20-50V, and the periodic current is preferably 50-150 mA.
In the above technical scheme, in the step three, the reaction time is preferably 10-20 h.
A solar cell panel cooling structure comprises a glass cover plate, a cooling material layer and a protective layer;
the glass cover plate is arranged on the EVA (ethylene vinyl acetate) film layer of the solar cell panel, the cooling material layer is arranged on the glass cover plate, and the protective layer is arranged on the cooling material layer; the cooling material layer is made of the porous anodic aluminum oxide cooling material, the thickness of the cooling material layer is 50-100 micrometers, the thickness of the glass cover plate is 3-5 millimeters, and the thickness of the protective layer is 8-12 micrometers.
The invention has the advantages and beneficial effects that:
the invention adopts a passive radiation cooling method, the cooling material layer utilizes the formed two-dimensional porous nano material porous anodic aluminum oxide to efficiently reflect 0.3-0.375 micron and 1.1-2.5 micron sunlight, but has no influence on the sunlight with the spectral response wavelength of 0.375-1.1 micron of the solar cell panel; the discontinuous anodic aluminum oxide diluted by the air holes can be better matched with the impedance of the surrounding medium (air), has the characteristic of high infrared emissivity in an atmospheric window (8-13 microns), and emits the heat of the crystal silicon layer in the form of infrared rays to play a role in cooling.
The protective layer is added on the cooling material layer, and the protective material has high light transmission effect, prevents the cooling material layer from being exposed to the environment for long time and collects dust and protects the cooling material.
The invention can effectively reduce the temperature of the crystalline silicon layer and improve the efficiency of the solar cell panel by selectively transmitting the passive radiation cooling method, and is an effective means for solving the problem of low efficiency of the existing crystalline silicon solar cell.
Drawings
Fig. 1 is a schematic view of a solar panel cooling structure according to the present invention.
Wherein: 1 is the protective layer, 2 cooling material layers, 3 is the EVA glued membrane layer, 4 is the glass apron, 5 is solar cell panel, 6 is the backplate.
For a person skilled in the art, other relevant figures can be obtained from the above figures without inventive effort.
Detailed Description
In order to make the technical solution of the present invention better understood, the technical solution of the present invention is further described below with reference to specific examples.
Example 1
A porous anodic alumina cooling material A is prepared by the following steps: pure aluminum is used as an anode by utilizing an electrochemical oxidation principle, a graphite carbon rod is used as a cathode, the anode and the graphite carbon rod are placed in a container filled with oxalic acid with the concentration of 5 wt% as electrolyte, constant voltage of 30V is applied to two ends of the electrode, the electrolyte is continuously stirred by adopting a magnetic stirrer, the rotating speed is about 1000r/min, the whole device is placed in an environment with the low temperature of 1 ℃, a sample is taken out after reaction 2, and an oxide film on the surface of the sample is removed by utilizing a mixed solution of 3 wt% of chromium trioxide and 5 vol% of phosphoric acid; and (3) carrying out a second reaction on the sample with the oxide film removed under the conditions, wherein the reaction time is 15h, micropores with different pore sizes are formed on the surface of the pure aluminum along with continuous oxidation of the pure aluminum in the electrolyte and continuous dissolution of the oxide film, removing unreacted pure aluminum by using a mixed solution prepared from 5 vol% hydrochloric acid and 1M copper chloride after the reaction is finished, and finally expanding the pores in 5 vol% phosphoric acid solution at 30 ℃ for 20min to obtain the cooling material layer.
The cooling material layer has a reflectance of 0.5 at 0.3-0.375 μm, a reflectance of 0.85 at 1.1-2.5 μm, and a transmittance of about 100% at 0.375-1.1 μm, as measured by UV-VIS-NIR spectrophotometer.
Example 2
A porous anodic aluminum oxide cooling material B is prepared by the following steps: pure aluminum is used as an anode by utilizing an electrochemical oxidation principle, a graphite carbon rod is used as a cathode, the anode is placed in a container filled with phosphoric acid with the concentration of 10 wt% as electrolyte, a constant voltage of 60V is applied to two ends of the electrode, the electrolyte is continuously stirred by adopting a magnetic stirrer at the rotating speed of about 1000r/min, the whole device is placed in an environment with the low temperature of 3 ℃, a sample is taken out after reaction for 4h, and an oxide film on the surface of the sample is removed by utilizing a mixed solution of 3 wt% of chromium trioxide and 5 vol% of phosphoric acid; and (3) carrying out a second reaction on the sample with the oxide film removed under the conditions, wherein the reaction time is 20h, micropores with different pore sizes are formed on the surface of the pure aluminum along with continuous oxidation of the pure aluminum in the electrolyte and continuous dissolution of the oxide film, removing unreacted pure aluminum by using a mixed solution prepared from 5 vol% hydrochloric acid and 1M copper chloride after the reaction is finished, and finally expanding the pores in 5 vol% phosphoric acid solution for 30min at the temperature of 30 ℃ to obtain the cooling material layer.
The cooling material layer has a reflectance of 0.6 at 0.3-0.375 μm, a reflectance of 0.9 at 1.1-2.5 μm, and a transmittance of about 100% at 0.375-1.1 μm, as measured by UV-VIS-NIR spectrophotometer.
Example 3
A porous anodic aluminum oxide cooling material C is prepared by the following steps: pure aluminum is used as an anode by utilizing an electrochemical oxidation principle, a graphite carbon rod is used as a cathode, the anode is placed in a container which contains 20 wt% of selenic acid as electrolyte, a periodic current of 150-200mA is applied to two ends of the electrode, a magnetic stirrer is used for continuously stirring the electrolyte, the rotating speed is about 1000r/min, the whole device is placed in an environment with the low temperature of 5 ℃, a sample is taken out after 5 hours of reaction, and an oxide film on the surface of the sample is removed by utilizing a mixed solution of 3 wt% of chromium trioxide and 5 vol% of phosphoric acid; and (3) carrying out a second reaction on the sample with the oxide film removed under the conditions, wherein the reaction time is 25h, micropores with different pore sizes are formed on the surface of the pure aluminum along with continuous oxidation of the pure aluminum in the electrolyte and continuous dissolution of the oxide film, removing unreacted pure aluminum by using a mixed solution prepared from 5 vol% hydrochloric acid and 1M copper chloride after the reaction is finished, and finally expanding the pores in 5 vol% phosphoric acid solution for 40min at the temperature of 30 ℃ to obtain the cooling material layer.
The cooling material layer has a reflectance of 0.7 at 0.3-0.375 μm and a reflectance of 0.95 at 1.1-2.5 μm as measured by UV-VIS-NIR spectrophotometer. The transmission between 0.375 and 1.1 microns is about 100%.
Example 4
As shown in fig. 1, the diagram shows the following components from top to bottom: the radiation type solar cell panel passive cooling structure based on selective transmission comprises a combined material layer, wherein the combined material layer is arranged on the surface of a glass cover plate 4 of a solar cell panel, the combined material layer comprises a cooling material layer 2 and a protective layer 1, the cooling material layer 2 is arranged between the glass cover plate 4 and the protective layer 1 and is fully contacted with the glass cover plate 4, the protective layer 1 is a high-light-transmission material plate PE film (the solar light transmittance is 100 percent, the infrared light transmittance is 92 percent), the cooling material layer 2 is prevented from being exposed in the environment for long time to collect dust, and the cooling material layer 2 is prevented from being damaged. The cooling material layer 2 is made of two-dimensional porous nano material anodic aluminum oxide, the cooling material layer 2 reflects the part of sunlight which is absorbed by the solar cell and converted into heat energy, the part of sunlight penetrates through solar radiation which can be converted into electric energy, and meanwhile, the heat of the solar panel is emitted in the form of infrared rays. The discontinuous anodic alumina diluted by the air holes can be better matched with impedance of surrounding media (air), the alumina has strong acoustic resonance absorption at a far infrared window, but the continuum cannot be directly suitable for cooling application, the cooling material layer 2 is a discontinuous body consisting of the alumina and the air holes, the dielectric constant can be greatly reduced by diluting the air holes, so that the impedance matching with the surrounding media (air) is improved, the infrared emissivity of the cooling material layer is improved at an atmospheric window (8-13 microns), and a plurality of micropores with different sizes are formed by anodic oxidation. The emissivity/absorptivity of the cooling material layer 2 in the atmospheric window is measured to be 0.9 to 0.96 by a fourier transform spectrophotometer.
Since the spectral response wavelength range of the crystalline silicon solar panel is 0.375-1.1 microns, and the waveband range of solar radiation observed on the ground is about 0.3-2.5 microns, the thickness and porosity of the film are controlled by controlling the oxidation time, the oxidation voltage/current and the electrolyte concentration, wherein the thickness is increased along with the increase of the oxidation voltage/current and the time, and the porosity is increased along with the decrease of the electrolyte concentration and the increase of the pore-expanding time. The cooling material layer film can efficiently reflect 0.3-0.375 micron and 1.1-2.5 micron sunlight, reduce the heating effect of the sunlight on the solar panel, and transmit the 0.375-1.1 micron solar radiation to enable the solar cell to carry out photovoltaic effect.
Meanwhile, the heat of the crystalline silicon layer can be transferred to the cooling material, and the cooling material utilizes the high infrared emissivity of the cooling material to emit the heat to the universe with the temperature of only 3K (minus 272 ℃) through an atmospheric window of 8-13 microns in an infrared mode, so that the aim of reducing the working temperature of the solar panel is fulfilled. The temperature drop can reach 5-10 ℃. The relative efficiency is improved by 2.25-4.5%. The cooling material layer 2 reflects 0.3 to 0.375 micrometers and 1.1 to 2.5 micrometers of sunlight, and the manufacturing method of the cooling material layer 2 is as described in the above embodiments 1 to 3.
Example 5
The invention relates to a radiation type solar cell panel passive cooling method based on selective transmission, which comprises the following steps:
the first step is as follows: pure aluminum is used as an anode by utilizing an electrochemical oxidation principle, a graphite carbon rod is used as a cathode and is placed in a container filled with oxalic acid (or phosphoric acid, selenic acid and sulfuric acid) as electrolyte, constant voltage or periodic current is applied to two ends of the electrode, a magnetic stirrer is used for continuously stirring the electrolyte, the whole device is placed in a low-temperature environment, a sample is taken out after reaction for a period of time, and an oxide film on the surface of the sample is removed by utilizing a mixed solution of chromium trioxide and phosphoric acid;
the second step is that: reacting the sample with the oxide film removed under the conditions again, forming micropores with different pore diameters on the surface of the pure aluminum along with continuous oxidation of the pure aluminum in the electrolyte and continuous dissolution of the oxide film, and removing unreacted pure aluminum to obtain a cooling material layer;
the third step: attaching the cooling material layer on the surface of the glass cover plate, fully contacting the cooling material layer and the glass cover plate, and bonding the periphery of the cooling material layer and the glass cover plate by glue;
the fourth step: a high-light-transmission material plate PE film (the solar light transmittance is 100 percent, and the infrared light transmittance is 92 percent) is tightly covered on the cooling material layer to be used as a protective layer, so that particles in the air are prevented from blocking micropores, and the effect of preventing the cooling material layer from being damaged is achieved;
the fifth step: the solar panel covered with the protective layer and the cooling material layer is exposed outdoors, and the periphery is ensured to be free of shielding as much as possible, so that heat in the solar panel is emitted to the space through the cooling material layer and the protective layer in an infrared mode.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
The invention has been described in an illustrative manner, and it is to be understood that any simple variations, modifications or other equivalent changes which can be made by one skilled in the art without departing from the spirit of the invention fall within the scope of the invention.
Claims (7)
1. A porous anodized aluminum cooling material characterized by: the reflectance at 0.3-0.375 micrometer is 0.5-0.7, the reflectance at 1.1-2.5 micrometer is 0.85-0.95, and the transmittance at 0.375-1.1 micrometer is 100%.
2. A preparation method of a porous anodic aluminum oxide cooling material is characterized by comprising the following steps:
taking pure aluminum as an anode and a graphite carbon rod as a cathode, placing the anode and the cathode in a container filled with acid solution with the concentration of 2-20 wt% as electrolyte, applying constant voltage of 10-60V or periodic current of 0-200mA to two ends of the electrode, continuously stirring the electrolyte by adopting a magnetic stirrer, reacting for 2-5h at the temperature of 0-5 ℃, and taking out reactants;
step two, removing an oxide film on the surface of the sample by using a mixed solution containing 3 wt% of chromium trioxide and 5 vol% of phosphoric acid;
thirdly, carrying out a second reaction on the reactant with the oxide film removed under the experimental conditions of the first step for 15-25 h, and forming micropores with different pore sizes on the surface of the pure aluminum along with continuous oxidation of the pure aluminum in the electrolyte and continuous dissolution of the oxide film;
and step four, removing unreacted pure aluminum by using a mixed solution prepared from 5 vol% hydrochloric acid and 1M copper chloride after the reaction is finished, and finally reaming in a 5 vol% phosphoric acid solution for 20-40min at the temperature of 30 ℃ to obtain the porous anodic aluminum oxide cooling material.
3. The method of claim 2 for preparing a porous anodized aluminum cooling material, comprising: in the first step, the acid solution is oxalic acid, phosphoric acid, selenic acid or sulfuric acid.
4. The method of claim 2 for preparing a porous anodized aluminum cooling material, comprising: in the first step, the stirring speed of the magnetic stirrer is 800-.
5. The method of claim 2 for preparing a porous anodized aluminum cooling material, comprising: in the first step, the constant voltage is 20-50V, and the periodic current is 50-150 mA.
6. The method of claim 2 for preparing a porous anodized aluminum cooling material, comprising: in the third step, the reaction time is 10-20 h.
7. The utility model provides a solar cell panel cooling structure which characterized in that: comprises a glass cover plate, a cooling material layer and a protective layer;
the glass cover plate is arranged on the EVA (ethylene vinyl acetate) film layer of the solar cell panel, the cooling material layer is arranged on the glass cover plate, and the protective layer is arranged on the cooling material layer; the cooling material layer is made of the porous anodic aluminum oxide cooling material, the thickness of the cooling material layer is 50-100 micrometers, the thickness of the glass cover plate is 3-5 millimeters, and the thickness of the protective layer is 8-12 micrometers.
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