Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 1, a display device 10 includes: a substrate layer 20, a circuit layer 30, and a display element 40. The circuit layer 30 includes a conductive layer 310 and a protective layer 320. The conductive layer 310 is disposed on a surface of the substrate layer 20. The protection layer 320 is disposed on a surface of the conductive layer 40 away from the substrate layer 20. The display element 40 is disposed on a surface of the circuit layer 30 and electrically connected to the circuit layer 30.
By providing the protective layer 40, the display module 10 can prevent the metal of the conductive layer 310 from being directly exposed to air, thereby reducing the possibility of the conductive layer 310 contacting oxygen. The conductive layer 310 is not exposed to oxygen and does not oxidize to a chemically relatively stable oxide, so that the conductive layer 310 can maintain good conductivity. By arranging the protective layer 40, the conductive layer 310 can be effectively protected from being oxidized, the conductive layer 310 is ensured to have good conductivity, and the service life of the display assembly 10 is prolonged.
The substrate layer 20 may be a transparent material such as tempered glass, PET or PC, or an opaque material such as a steel plate, acrylic plate, or PVC. In one embodiment, the substrate layer 20 is a tempered glass, which has a certain hardness and can support other materials to adhere to it. The toughened glass has higher adhesion, and when the toughened glass is broken, the broken parts can be mutually adhered, cannot scatter and reduce the damage.
The substrate layer 20 provides a planar support structure for materials in subsequent processes and also provides a fabrication plane for subsequent operations. The substrate layer 20 also serves to protect the overall structure when subjected to a crush or impact condition. In one embodiment, the thickness of the substrate layer 20 may be 10mm to 100mm, and the thickness of the substrate layer 20 may be 30mm to 60mm. In one embodiment, the substrate layer 20 has a thickness of 30mm, and has good light transmittance and transparency. In one embodiment, the thickness of the substrate layer 20 is 60mm, and the substrate layer has high hardness, so that the safety factor is improved, and the use safety is ensured. The conductive layer 310 functions to break down current, and current flows through the conductive layer 310 according to a specific route. The circuit layer 30 may be a layer structure formed by arranging wires, or may be a conductive film. In one embodiment, the circuit layer 30 is a conductive thin film layer formed by etching to form a circuit, and the thickness of the conductive thin film layer is small, thereby facilitating mass production and spatial arrangement.
The
conductive layer 310 is disposed on the
substrate layer 20 and can conduct current. In one embodiment, the material of the
conductive layer 310 may be a metal material such as copper, molybdenum, aluminum, or nickel. The metal material is more conductive than an oxide of the same material. Due to process limitations, the
conductive layer 310 may be exposed to air for a period of time and an oxidation reaction may occur. During the packaging process, a small portion of gas may remain, and this portion of gas may also react with the metal, decreasing the metal content of the
conductive layer 310 and increasing the metal oxide content. In one embodiment, the material of the
conductive layer 310 is molybdenum, which has low reducibility and is not easily oxidized when contacting with air, and thus, the overall structure can be ensured to be stableAnd (5) determining the service performance. The thickness of the
conductive layer 310 is not limited as long as the conductive property is ensured. The thickness of the
conductive layer 310 is
Since molybdenum is an opaque material, light transmittance can be secured only when the thickness is very thin. In one embodiment, the
conductive layer 40 has a thickness of
Not only has good conductive performance, but also, in this thickness range, the light transmittance of the
conductive layer 40 is not less than 75%.
The
protective layer 320 may be used to isolate air, prevent oxygen in the air from contacting the
conductive layer 310, and prevent the
conductive layer 310 from being oxidized. In one embodiment, the material of the
protection layer 320 may be one of metal oxides such as indium tin oxide, aluminum zinc oxide, or tin dioxide. In one embodiment, the material of the
passivation layer 320 is indium tin oxide. The indium tin oxide is chemically stable and is not easily chemically reacted with the
conductive layer 310, and the indium tin oxide is used as a protective layer to isolate the
conductive layer 310 from air and protect the
conductive layer 310 from oxidation. Further, the
display module 10 has good conductivity, which increases the service life of the
display module 10. The thickness of the
protective layer 320 is not limited as long as oxygen permeation in the air is prevented. The
protective layer 320 has a thickness of
In one embodiment, the
protective layer 50 has a thickness of
Not only can the contact between oxygen and the
conductive layer 310 be avoided and the oxidation reaction occur, but also the light transmittance can be ensured and the transparency of the whole structure of the
display module 10 can be maintained. The above-mentionedWhen the
passivation layer 320 is made of ito, it also has a conductive function.
In one embodiment, the conductive layer 310 and the protection layer 320 may form a parallel structure, so that the resistance of the circuit layer 30 may be reduced, the current melting amount may be larger, and the conductive width may be increased. The conductive layer 310 is connected in parallel with the protection layer 320, so that the conductivity of the display assembly 10 is increased, the display speed is faster, and the switching speed of the display interface is faster. The protection layer 320 can isolate the conductive layer 310, prevent the conductive layer 310 from contacting with air, and reduce the probability of oxidation reaction.
The circuit layer 30 may further include an insulating layer, which may be disposed on the surface of the protection layer 320. When the display module 10 operates faster, the gas in the package is also charged, and the air contacts the protection layer 320, which may interfere with the current flow direction and magnitude of the protection layer 320, causing the display interface of the display module 10 to be unstable, and even bringing external electromagnetic induction into the control mechanism, causing the display module 10 to be damaged. The circuit layer 30 is provided with the insulating layer, so that the protective layer 320 can be prevented from contacting with air, and the magnetic induction effect is reduced.
The display element 40 emits light according to a setting. In one embodiment, the display element 40 may be an LED lamp. The one of the display elements 40 may include a plurality of light emitting chips. The plurality of light emitting chips are used for emitting light of different colors. The display element 40 may be an LED lamp, and the light emitting chip may be an LED chip. It should be understood that the LED chip can emit light of different wavelengths (i.e., different colors) because electrons and holes in different semiconductor materials are in different energy states and thus release different energy when the electrons and holes recombine. Specifically, for example, the gallium phosphide LED chip may emit red light, the gallium phosphide LED chip may emit green light, the silicon carbide LED chip may emit yellow light, and the indium gallium nitride LED chip may emit blue light. Specifically, the LED lamp may include LED chips of different colors, and the LED chips are individually controlled, may mix light of different colors, and may also be used for imaging. The LED chip emits light with high purity, so that the LED chip can be widely applied to the field of display screens. The LED lamp can use a low-voltage power supply, the voltage of a single lamp is 1.9-4V, and the LED lamp is safer and more reliable. The display element 40 is connected with the circuit layer 30 to obtain electric energy, and the purpose of displaying is achieved through different on-off circuits.
Referring to fig. 2, the conductive layer 310 includes an adhesion conductive layer 311 and a reinforcing conductive layer 312. The adhesion conductive layer 311 is disposed on the surface of the substrate layer 20. The enhanced conductive layer 312 is disposed on a surface of the adhesion conductive layer 311 away from the substrate layer 20.
The adhesion conductive layer 311 can enhance the adhesion of the conductive layer 30 to the substrate layer 20. The adhesion conductive layer 311 is disposed on the surface of the substrate layer 20. The atoms attached to the conductive layer 311 interact with the atoms of the substrate layer 20 to form chemical bonds, so that the attaching capability of the conductive layer 310 is enhanced, and the falling off of the conductive layer 310 is reduced. The reinforcing conductive layer 312 can reinforce the conductive ability of the conductive layer 30. Free electrons in the metal of the enhanced conductive layer 312 are active, and when a voltage is applied, the electrons move in a direction to form a current, so that the conductivity of the conductive layer 310 is enhanced.
In one embodiment, the material of the adhesion conductive layer 311 and the material of the enhancement conductive layer 312 may be the same or different. When the materials are the same, the density of the adhesion conductive layer 311 may be greater than that of the reinforcement conductive layer 312. In one embodiment, the materials of the adhesion conductive layer 311 and the enhanced conductive layer 312 may both be molybdenum, and a set of manufacturing tools may be used during the manufacturing process, thereby saving resources. The adhesion conductive layer 311 and the enhancement conductive layer 312 are made of the same material, so that the speed of current flowing through the two layers is the same, no potential difference is generated between the two layers, and the electric energy stability of the whole structure is ensured. The display assembly 10 further includes an isolation layer 50 disposed between the substrate layer 20 and the adhesion conductive layer 311.
The isolation layer 50 is disposed between the substrate layer 20 and the adhesion conductive layer 311. The isolation layer 50 can prevent the metal attached to the conductive layer 311 from being contaminated by the charged atoms of the substrate layer 20.
In one embodiment, the substrate layer 20 is made of glass. The glass contains Na in addition to silica 2 O and CaO. The silica is chemically stable, but Na 2 O and CaO are relatively reactive in chemistry, and when encountering metals, oxygen ions are close to metal atoms and far from sodium ions and calcium ions. In the slow migration of electrons, the metal is gradually oxidized, metal atoms are tightly combined with oxygen ions, and the mobility of metal electrons is deteriorated, which is represented in a macroscopic phenomenon that the conductivity of the metal is deteriorated. By disposing the isolation layer 50 between the substrate layer 20 and the adhesion conductive layer 311, the oxygen ions of the substrate layer 20 do not contact with the adhesion conductive layer 311, and are not combined with the metal of the adhesion conductive layer 311, and by disposing the isolation layer 50, the metal of the adhesion conductive layer 311 can be effectively prevented from being oxidized. By providing the isolation layer 50, the overall structure has good electrical conductivity.
In the above embodiment, the material of the isolation layer 50 may be a material having a composition close to that of glass, such as silicon dioxide, silicon nitride, or silicon oxynitride. In one embodiment, the glass has a silica content of about 70%, the adhesion of the same material is greater than that of other materials, and the isolation layer 50 is tightly adhered to the substrate layer 20.
In one embodiment, when molybdenum is used for the conductive layer 310, silicon dioxide is used for the isolation layer 50. The thermal expansion coefficients of the molybdenum of the circuit layer 30 and the silicon dioxide of the isolation layer 50 are substantially the same, and when the external temperature changes, the molybdenum can be well attached to the surface of the silicon dioxide of the isolation layer 50, so that the circuit layer 30 is prevented from being separated from the isolation layer 50.
The display component 10 realizes structural stability by arranging the adhesion conductive layer 311 to be tightly combined with the isolation layer 50; by providing the reinforcing conductive layer 312, good conductivity of the display module 10 is ensured.
Referring to fig. 3, a surface of the isolating layer 50 on a side away from the substrate layer 20 is provided with a corrugated structure 501 or a raised structure. The corrugated structure 501 or the raised structure can increase the contact area between the isolation layer 50 and the adhesion conductive layer 311, and increase the static friction force. The volume of the attached conductive layer 311 is constant, and the larger the adhesive area is, the larger the attaching ability is. The corrugated structure 501 or the raised structure enables the adhesion conductive layer 311 and the reinforcement conductive layer 312 to be tightly bonded to the isolation layer 50. Referring to fig. 4, an embodiment of the present application further provides a method for manufacturing a display module, including the following steps:
a conductive layer 310 is prepared on one surface of the substrate layer 20.
A protective layer 320 is formed on the surface of the conductive layer 310 remote from the substrate layer 20.
Etching the protective layer 320 and the conductive layer 310 to form a conductive circuit;
the conductive lines are electrically connected to the display element 60.
By forming the protection layer 320 on the surface of the conductive layer 310 away from the substrate layer 20, the display module 10 can prevent the metal of the conductive layer 310 from being directly exposed to air, thereby reducing the possibility of the conductive layer 310 contacting oxygen. The conductive layer 310 is not exposed to oxygen and does not oxidize to a chemically relatively stable oxide, and thus, the conductive layer 310 can maintain good conductivity. By preparing the protective layer 320 on the surface of the conductive layer 310, the conductive layer 310 can be effectively protected from being oxidized, the conductive layer 310 is ensured to have good conductivity, and the service life of the display module 10 is prolonged.
The conductive layer 310 and the protective layer 320 are prepared by magnetron sputtering coating. Magnetron sputtering coating: the plasma of the thin gas bombards the surface of the cathode target under the action of an electric field, molecules, atoms, ions, electrons and the like on the surface of the target are sputtered out, and the sputtered particles have certain kinetic energy and are jetted to the surface of a base body along a certain direction to form a coating on the surface of the base body. The magnetron sputtering coating has the characteristics of high speed, compact film layer, good adhesiveness and the like, and is suitable for large-batch and high-efficiency industrial production.
In one embodiment, the conductive layer310 can be prepared by magnetron sputtering. In the magnetron sputtering process, the sputtering target material is a molybdenum ceramic target material, the sputtering atmosphere is a mixed gas of argon and oxygen, and when the molybdenum film is prepared by the magnetron sputtering method, oxygen is added into the sputtering atmosphere to participate in sputtering, so that the chemical ratio in the film can be effectively adjusted, the oxygen vacancy defect is reduced, the carrier concentration is reduced, and the resistivity is improved. The volume ratio of argon to oxygen in the sputtering atmosphere is controlled within the range of 5
The
conductive layer 310 used in one embodiment of the application is molybdenum, the forbidden band width of the molybdenum prepared by the preparation method of the application is 3.23V, and the
conductive layer 310 prepared by the magnetron sputtering method of the application has good adhesive force and bonding force. In one embodiment, the molybdenum film layer is coated by magnetron sputtering, and the coating chamber drives the cycle: 200s-350s; radiation temperature in the coating chamber: 80-110 ℃; vacuum degree: 3.0X 10
-2 Pa-5×10
-2 Pa; sputtering power: 5000W-9000W; thickness of molybdenum layer:
to ensure that the sheet resistance of the molybdenum layer is less than 3 omega-4 omega/mm
2 。
In one embodiment, the
protective layer 320 is formed by magnetron sputtering. In the magnetron sputtering process, the sputtering target material is an indium tin oxide ceramic target material, the sputtering power is 150W-250W, the sputtering atmosphere is a mixed gas of argon and oxygen, and when the indium tin oxide film is prepared by adopting the magnetron sputtering method, oxygen is added into the sputtering atmosphere to participate in sputtering, so that the chemical ratio in the film can be effectively adjusted, the oxygen vacancy defect is reduced, the carrier concentration is reduced, and the resistivity is improved. Controlling the volume ratio of argon to oxygen in the sputtering atmosphere within the range of 2 to 10, wherein the obtained indium tin oxide film has the advantages of less oxygen vacancy defects, low carrier concentration and high resistance, and the thickness of the
protective layer 320 is as follows
The
protective layer 320 used in one embodiment of the application is indium tin oxide, the forbidden band width of the indium tin oxide prepared by the preparation method of the application is 3.23V, and the
protective layer 320 prepared by the magnetron sputtering method in the application has good adhesive force and bonding force. In one embodiment, indium tin oxide is coated by magnetron sputtering, and the coating chamber drives the cycle: 50s-150s; film coating temperature: 300-450 ℃; vacuum degree: 3.0X 10
-1 Pa-4.5×10
-1 Pa; indium tin oxide sputtering power: 8500W-9000W; o is
2 The flow rate is 100Sccm-130Sccm, and the Ar flow rate is 200Sccm-220Sccm; thickness of indium tin oxide film
The sheet resistance of the ITO film is 40 omega/mm
2 -100Ω/mm
2 。
Referring to fig. 5, in one embodiment, after the conductive layer 310 and the protection layer 320 are prepared, the conductive lines are formed after the processes of scraping, exposing, developing, etching, and the like, and two ends of the conductive lines are respectively connected to the display device 60 and the driving controller. During the etching process, a slit area 301 is generated in the conductive layer 310 and the protective layer 320, the width of the slit area 301 is 16mm-200mm, and the width of the conductive line is 0.2mm-0.4mm.
The step of preparing the conductive layer 310 on one surface of the substrate layer 20 includes:
an adhesion conductive layer 311 is prepared on the surface of the substrate layer 20.
An enhanced conductive layer 312 is formed on the surface of the attached conductive layer 311 remote from the substrate layer 20.
Preparing the adhesion conductive layer 311 on the surface of the substrate layer 20 may be used to enhance the adhesion of the conductive layer 310. During the process of preparing the adhesion conductive layer 311, atoms of the adhesion conductive layer 311 interact with atoms of the substrate layer 20 to form chemical bonds, so that the adhesion capability of the conductive layer 310 to the surface of the substrate layer 20 is enhanced, and the shedding of the conductive layer 310 is reduced.
The preparation of the enhanced conductive layer 312 on the surface of the attached conductive layer 311 away from the substrate layer 20 may be used to enhance the conductivity of the conductive layer 310. Because the enhanced conductive layer 312 is protected by the attached conductive layer 311, free electrons in the enhanced conductive layer 312 are not bound by charged atoms of the substrate layer 20, when a load voltage is applied to the enhanced conductive layer 312, the directional movement speed of electrons is higher, and the conductivity of the conductive layer 310 is higher.
The adhering conductive layer 311 and the enhanced conductive layer 312 can be prepared by magnetron sputtering.
In one embodiment, the contact surface between the
conductive layer 310 and the
substrate layer 20 is typically provided with high adhesion molybdenum, since the molybdenum adhesion of the
conductive layer 310 becomes smaller as the sputtering power increases and the operating gas pressure decreases. Therefore, the physical properties of the molybdenum layer are adjusted by controlling the magnetron sputtering power in the whole coating process. In the initial plating process, a high-power and low-pressure mode is adopted to obtain a film layer with high adhesion and low conductivity, namely the
adhesion conductive layer 311, and the plating vacuum degree of the
adhesion conductive layer 311 is as follows: 3.0X 10
-2 Pa-4×10
-2 Pa; sputtering power: 7000W-9000W; the thickness of the
adhesion conductive layer 311 is
In the plating process, the power is gradually reduced, and the air pressure is increased to obtain a high-conductivity film layer, that is, the enhanced
conductive layer 312, and the plating vacuum degree of the attached
conductive layer 311 is: 4.0X 10
-2 Pa-5×10
-2 Pa; sputtering power: 5000W-7000W; the thickness of the
adhesion conductive layer 311 is
The
adhesion conductive layer 311 and the enhanced
conductive layer 312 can ensure that the
conductive layer 310 has good adhesion and conductivity.
Referring to fig. 6, before the step of preparing the conductive layer 310 on one surface of the substrate layer 20, the method further includes:
preparing an isolation layer 50 on the surface of the substrate layer 20 close to the circuit layer 30, and roughening the surface of the isolation layer 50 far away from the substrate layer 20 to form a corrugated structure 501 or a raised structure.
The isolating layer 50 is prepared between the substrate layer 20 and the adhesion conductive layer 311, so that the metal of the adhesion conductive layer 311 can be prevented from being impregnated by the charged atoms of the substrate layer 20, and the conductivity of the conductive layer can be ensured. The isolation layer is also prepared by a magnetron sputtering method, and the magnetron sputtering coating speed is high, the film layer is compact, and the adhesiveness is good.
The corrugated structure 501 or the raised structure is prepared on the surface of the isolation layer 50, so that the contact area between the isolation layer 50 and the adhesion conductive layer 311 can be increased, and the static friction force can be increased. The volume of the adhesion conductive layer 311 is constant, and the adhesion capability is increased as the adhesion area is increased. The corrugated structure 501 or the raised structure enables the conductive layer 310 to be tightly bonded to the isolation layer 50.
Referring to fig. 7, the embodiment of the present application further provides a photovoltaic curtain wall 100. The photovoltaic curtain wall 100 includes the display assembly 10 described above. The photovoltaic curtain wall 100 further comprises an encapsulation panel 60, a photovoltaic cell panel 70 and a transparent panel 80.
The display module 10 is adhered to the surface of the package panel 60 by a first adhesive layer 101. The photovoltaic panel 70 is adhered to the surface of the display assembly 10 away from the package panel 60 by a second adhesive layer 102. The transparent panel 80 is adhered to the surface of the photovoltaic panel 70 away from the display module 10 by a third adhesive layer 103. In one embodiment, a through hole 701 is opened at a position of the photovoltaic panel 70 corresponding to the display element 40, so that light of the display element 40 is emitted. The photovoltaic cell panel 70 is arranged on the light emitting surface of the display assembly 10, so that the phenomenon that the display assembly 10 is shielded in front of the photovoltaic cell panel 70 to cause hot spot effect can be avoided. The hot plate effect is that due to the existence of local shielding, the current and voltage of some single cells in the photovoltaic cell panel 120 are changed, so that a local temperature rise is generated on the photovoltaic cell panel 70, and the safety and the service life of the photovoltaic cell panel 70 are seriously affected. Therefore, the photovoltaic cell panel 70 is disposed at the front end of the display module 10, so that the photovoltaic cell panel 70 is not shielded by the display module 10, and the hot spot effect can be effectively avoided, thereby improving the safety of the photovoltaic cell panel 70 and prolonging the service life of the photovoltaic cell panel 70.
All possible combinations of the technical features of the above embodiments may not be described for the sake of brevity, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, and these are all within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.