CN111088480A - 涂布系统 - Google Patents

涂布系统 Download PDF

Info

Publication number
CN111088480A
CN111088480A CN201910917581.8A CN201910917581A CN111088480A CN 111088480 A CN111088480 A CN 111088480A CN 201910917581 A CN201910917581 A CN 201910917581A CN 111088480 A CN111088480 A CN 111088480A
Authority
CN
China
Prior art keywords
chamber
coating system
cathode
coating
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910917581.8A
Other languages
English (en)
Inventor
布赖斯·安东
V·戈罗霍夫斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vapor Technologies Inc
Vapor Tech Inc
Original Assignee
Vapor Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vapor Technologies Inc filed Critical Vapor Technologies Inc
Publication of CN111088480A publication Critical patent/CN111088480A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0664—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32614—Consumable cathodes for arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一种涂布系统，包含涂布室，该涂布室具有外围室壁、顶壁和底壁。该外围室壁、该顶壁和该底壁界定涂布腔体和室中心。等离子体源定位于该室中心处，其中该等离子体源包括中心阴极棒和围绕该中心阴极棒的多个阴极棒。该涂布系统还包含固持待涂布的多个基板的样品固持器。特征是，该样品固持器可在距该室中心第一距离处绕该室中心旋转。

Description

涂布系统
技术领域
在至少一个方面中，本发明涉及电弧沉积系统和相关方法。具体来说，本发明涉及一种利用远程电弧放电等离子体辅助工艺的PVD系统。
背景技术
物理气相沉积(PVD)和低压化学气相沉积(CVD)源用于涂层的沉积和表面处理。在过去的25年中，阴极电弧沉积(即，一种类型的物理沉积)已成为用于沉积来自导 电靶材料(例如，锆、钛、铬、铝、铜和其合金)的反应以及未反应涂层的高度离子化 等离子体的可靠源。电弧蒸发工艺中产生的高度离子化等离子体和相关联电子束也用于 例如离子溅镀、蚀刻、植入和扩散工艺的表面处理技术。在典型的阴极电弧涂布工艺中， 电弧使来自阴极靶的材料蒸发。蒸发的材料接着在基板上冷凝以形成涂层。
尽管阴极电弧系统能很好地起作用，但此类系统通常仅限于一种或几种应用。由于 涂布系统(且尤其是电弧沉积)的资本费用相对高，因此希望任何给定的系统能够在数种不同应用中操作。此类应用包含仅溅镀、仅阴极电弧沉积、同时溅镀加阴极电弧等。
因此，需要通用性改进的涂布系统。
发明内容
本发明通过在至少一个方面中提供一种包含围绕中心阴极棒的多个磁控管的涂布 系统而解决现有技术的一个或多个问题。该涂布系统包含涂布室，该涂布室具有外围室壁、顶壁和底壁。外围室壁、顶壁和底壁界定涂布腔体和室中心。等离子体源定位于室 中心处，其中等离子体源包括中心阴极棒和围绕中心阴极棒的多个阴极棒。该涂布系统 还包含固持待涂布的多个基板的样品保持器。特征是，样品保持器可在距室中心第一距 离处绕室中心旋转。
在另一实施例中，提供一种具有外部磁性线圈的涂布系统。该涂布系统包含涂布室， 该涂布室具有外围室壁、顶壁和底壁。外围室壁、顶壁和底壁界定涂布腔体和室中心。等离子体源定位于室中心处，其中等离子体源包括中心阴极棒。该涂布系统还包含固持 待涂布的多个基板的样品保持器。样品保持器可在距室中心第一距离处绕室中心旋转。 第一同轴磁性线圈定位在涂布室外部，且第二同轴磁性线圈定位在涂布室外部。
有利地，上文阐述的涂布系统可以用于数个不同应用。在一个实例中，涂布系统可以适用于伴有金属气态等离子体的两离子化的等离子体增强磁控溅镀，通过在中心阴极棒与由外围室壁定位的远程阳极之间建立的远程电弧放电实现该离子化，该磁控溅镀由在隔离屏蔽件内部产生的空心阴极等离子体进一步增强。在另一应用中，涂布系统可以 适用于单独的阴极电弧等离子体沉积或其与磁控溅镀的组合，该磁控溅镀由隔离屏蔽件 内产生的稠密空心阴极等离子体增强。在另一应用中，涂布系统可以适用于带负电金属 网容器内产生的空心阴极气态等离子体中的离子清洗和离子表面处理。在又一应用中， 涂布系统可以适用于等离子体增强磁控溅镀(PEMS)。
附图说明
图1为包含至少一个隔离屏蔽件和多个阴极棒的涂布系统的示意性横截面和俯视图；
图2A为包含至少一个隔离屏蔽件和多个阴极棒的涂布系统的示意性横截面和侧视 图；
图2B为垂直于图2A的视图的包含至少一个隔离屏蔽件的涂布系统的示意性横截面 和侧视图；
图2C为多个阴极棒在溅镀期间的操作的示意性说明；
图3为具有外部磁性线圈的涂布系统的示意性横截面和俯视图；
图4A为由平行棒形成的隔离屏蔽件的侧视图；且
图4B为由平行棒形成的隔离屏蔽件的侧视图。
具体实施方式
现将详细参考本发明的目前优选组合物、实施例和方法，该等组合物、实施例和方法构成了目前发明者已知的实践本发明的最佳模式。图式未必按比例绘制。然而，应理 解，所公开的实施例仅是本发明的示范性实施例，其可以按各种和替代性的形式体现。 因此，本文所公开的具体细节不解释为限制性的，而仅作为本发明的任何方面的代表性 基础，和/或作为用于传授所属领域的技术人员以不同地采用本发明的代表性基础。
还应理解，本发明不限于下文描述的具体实施例和方法，因为具体的组件和/或条件 当然可以发生变化。此外，本文使用的术语仅出于描述本发明的特定实施例的目的而使用，并且不打算以任何方式为限制性。
还必须注意，除非上下文另外清楚地指示，否则如在本说明书和所附权利要求书中 所使用，单数形式“一(a/an)”和“该”包括多个指示物。举例来说，以单数形式提及 的组件打算包括多个组件。
术语“包括”与“包含”、“具有”、“含有”或“表征为”同义。这些术语是包含性 且开放式的并且并不排除额外的未列出元件或方法步骤。
词组“由……组成”排除权利要求中未指定的任何元件、步骤或成份。当此词组出现在权利要求正文的分句中，而非紧接着前文时，其仅限制该分句中阐述的要素；其它 要素并不排除在整个权利要求之外。
词组“主要由……组成”将权利要求的范围限于指定材料或步骤，以及不会实质上影响所要求主题的基本和新颖特性的那些材料或步骤。
关于术语“包括”、“由……组成”和“主要由……组成”，在本文使用这三个术语 中的一个的情况下，本发明所公开和要求的主题可以包含使用其它两个术语中的任一 个。
在整个参考公开案的本申请案中，这些公开案的公开内容特此以全文引用的方式并 入本申请案中，以更加完整地描述本发明所涉及的目前最先进的水平。
参考图1、图2A、图2B和图2C，提供具有绕中心阴极分布的多个阴极棒的涂布系 统的示意性说明。涂布系统10包含界定中心涂布腔体14的涂布室12。在一改进中，涂 布室12包含外围室壁16、顶壁18和底壁20。在此上下文中，“顶部”和“底部”是指 当涂布室以其设计位置(即待用于涂布基板的定向)定位时的相对位置。室中心22为 相对于外围壁16大致处于室中心的位置。在又一改进中，外围室壁16是圆柱形的，其 具有圆形横截面。外围壁16包含顶边缘24和底边缘26。顶壁18邻近于顶边缘24，而 底壁20邻近于底边缘26。在一改进中，顶壁18为定位于外围室壁的顶边缘24处的顶 凸缘，且底壁20为定位于外围室壁的底边缘26处的底凸缘。等离子体源30定位于室 中心处。样品保持器32固持待涂布的多个基板34。样品保持器32可在距室中心第一距 离d1处沿着方向f1绕室中心旋转。
如图2A和图2B中所描绘，等离子体源30可以包含中心阴极棒60和围绕中心阴极棒60的中心线圈62。中心线圈62绕阴极棒60同轴地安装。阴极棒60由电源64供电， 而中心线圈62由电源66供电。控制系统68可以用于控制流过阴极棒60和中心线圈62 的电流。通常，流过的电流为从50到2000A。
仍参考图1、图2A、图2B和图2C，提供包含绕中心阴极分布的多个阴极溅镀棒的 涂布系统的示意性说明。这些棒可以有利地用作用于磁控溅镀的磁控管。在此变型中， 涂布系统10包含围绕等离子体源30(例如，中心阴极棒60和中心线圈62)的多个阴 极棒72、74、76和78。在一变型中，多个阴极棒包含1到10(例如，1、2、3、4、5、 6、7、8、9或10)个棒形阴极，该等棒形阴极具有与外围室壁平行对齐的纵向轴线a1。 在另一改进中，多个阴极棒包含偶数(例如，2、4、6、8等)个棒形阴极，该等棒形阴 极具有与外围室壁平行对齐的纵向轴线a1。图3描绘存在4个辅助阴极棒的情况。通常， 多个阴极棒中的每一阴极棒可绕纵向轴线a2旋转。邻近棒可以在相同旋向或相反旋向上 (即，顺时针或逆时针)旋转。在一改进中，多个阻挡屏蔽件82、84使得阻挡屏蔽件定 位于多个阴极棒中的交替的若干对阴极棒之间。
如图2C中所示出，电流可以沿着圆柱形磁控管源的轴线传导，其中沿着每对相邻阴极棒的电流在相反方向I1和I2上指向。在此情况下，沿着磁控管的轴线传导的线性电 流将产生聚焦磁场，此磁场的磁场线位于垂直于等离子体源的轴线的平面中，该等离子 体源通过阻挡屏蔽件82、84将金属蒸汽电弧等离子体远离等离子体源设置朝向涂布室 中的待涂布基板聚焦。在此涂布沉积中，阻挡屏蔽件82、84优选地沿着由沿着磁控溅 镀源传导的线性电流产生的磁力线定位，此情况使带正电离子被排斥远离挡板与阴极电 弧源之间的区域而朝向涂布室的沉积区域中的待涂布基板。
在一改进中，涂布系统10包含一个或多个隔离屏蔽件。第一隔离屏蔽件40绕室中心定位在距室中心第二距离d2处。通常，第二距离d2大于第一距离。替代地，第二距 离小于第一距离。第一隔离屏蔽件40通常带负电。出于此目的，系统10包含DC电源 42，其具有正端子44和连接到第一隔离屏蔽件40的负端子46；或通过连接到RF电源 47，在此情况下负自极化电势将在空心阴极容器内部产生RF空心阴极效应。真空系统 48与涂布室12流体连通且用于在涂布沉积期间维持真空。在下文更详细描述的一变型 中，远程阳极58定位在远离由第一隔离屏蔽件40建立的容器距室中心第三距离d3处。
第一隔离屏蔽件40可以建立包封中心地定位的金属蒸汽等离子体源和基板34两者 的空心阴极容器。相比于不具有隔离屏蔽件的系统，此情况允许在涂布沉积工艺的所有阶段期间，增大带负电第一隔离屏蔽件40的内部区域内的高能电子的密度和电子温度 以及浓度：(i)空心阴极容器内产生的空心阴极气态等离子体中的离子清洗和离子表面 状态阶段；(ii)当磁控溅镀提供在由空心阴极容器产生的空心阴极等离子体云内时，等 离子体增强磁控溅镀(PEMS)模式；(iii)伴有金属气态等离子体的两离子化的等离子 体增强磁控溅镀，通过在阴极电弧源的圆柱形阴极与由室壁定位的远程阳极之间建立的 远程电弧放电实现该离子化，该磁控溅镀由包封中心地定位的等离子体源和涂布沉积区 域中的基板34两者的带负电金属容器内部产生的空心阴极等离子体进一步增强；(iv) 单独的阴极电弧等离子体沉积模式或其与磁控溅镀的组合，该磁控溅镀由带负电空心阴 极容器内产生的稠密空心阴极等离子体增强。
在一变型中，涂布系统10进一步包含第二隔离屏蔽件50。第二隔离屏蔽件50定位于距室中心小于第一距离d1的第四距离d4处。在又一改进中，基板被加偏压到与第二 隔离屏蔽件50相同的电势。DC电压供应器52可以用于此目的。在一个改进中，第一 隔离屏蔽件40和第二隔离屏蔽件50各自独立地为金属网筛。通常，第一隔离屏蔽件40 为外金属网筛，且第二隔离屏蔽件50为内金属网筛。通常，外部网筛和内部网筛具有 各自独立地为从1mm到50mm的开口。在一改进中，外部网筛和内部网筛具有各自独 立地为从5mm到20mm的开口。其中待涂布基板被包封在由将基板与外围室壁分离的 第一隔离屏蔽件，和将基板与中心阴极棒分离的第二隔离屏蔽件建立的容器中。小于1 mm的开口可以阻挡等离子体跨越金属网壁流动，而大于50mm的开口可以减缓通过空 心阴极效应产生的稠密等离子体。
当第二隔离屏蔽件50存在时，基板34被包封在负的DC脉冲供电式金属网容器中，该容器建立于将基板34与外围壁16分离的第一隔离屏蔽件(例如，外部网筛)，与将 基板34与中心地定位的等离子体源分离的第二隔离屏蔽件50(例如，内金属网筛)之 间。基板可以通过简单电连接到金属网筛而被加偏压到与第一隔离屏蔽件40和/或第二 隔离屏蔽件50相同的电势，或替代地，基板34的偏压电势可以不同于金属网筛容器的 电势，基板的电势可以由独立的基板偏压电源(未示出)提供。
在一变型中，第一隔离屏蔽件40不必提供内部区域与接地室壁的完全分离。举例来说，在去除隔离屏蔽件的情况下，容器的顶部和底部可以完全或部分地开放到室。替 代地，第一隔离屏蔽件40和/或第二隔离屏蔽件50可以部分由并无开口的金属薄片制成。 举例来说，金属网容器的顶壁和底壁可以由并无开口的金属薄片制成或可以开放到室 壁。
在如图4A和图4B中所描绘的另一改进中，第一隔离屏蔽件40和第二隔离屏蔽件50中的一个或两个包含多个平行棒，其中相邻棒54之间通常具有从1mm到50mm的 距离dr。横杆56可以用于绕室中心22固持棒54。
如上文所阐述，涂布系统10可以进一步包含远程阳极58，该远程阳极可以定位于距室中心大于第一距离d1和第二距离d2的第四距离d4处。在一改进中，系统10进一步 包含沿着外围壁16分布的一个或多个额外远程阳极54。外围壁16可以任选地包含用于 定位此远程阳极的凹陷60。存在远程阳极允许涂布系统以远程电弧辅助磁控溅镀 (RAAMS)模式操作，如第9,412,569号美国专利中所阐述；该专利的全部公开内容在 此以引用的方式并入。
参考图3，提供具有外部同轴磁性线圈的涂布系统的示意性说明。在此变型中，不存在图2A和图2B中描绘的放置在涂布室12的腔体中的中心线圈62。实际上，同轴磁 性线圈放置在涂布室12外部但接近于外围壁16。举例来说，图3示由在涂布室外部接 近于第一壁定位的第一同轴磁性线圈90，和在涂布室外部接近于第二壁定位的第二同轴 磁性线圈92。
以下实例说明本发明的各种实施例。所属领域的技术人员将认识到在本发明的精神 和权利要求书的范围内的许多变型。
实例1。TiN涂层的RAAMS沉积。
装备有4个圆柱形磁控管和中心地定位的圆柱形阴极电弧源的图1中示出的涂布系 统用于此涂布沉积过程。磁控管和阴极电弧源两者都装备有钛靶材。在离子清洗的开始阶段，将氩气作为等离子体产生气体引入到真空室中，使气体压力介于1到10毫托之 间。由在阴极电弧靶的表面与定位于磁控管源之间的接地屏蔽件之间的机械触发器点燃 主电弧放电。接着在圆柱形阴极靶与由真空涂布沉积室的壁定位的远程阳极之间点燃远 程电弧放电。主电弧的电流被设定为140A而其电压在从大约25V到大约30V的范围内 振荡。远程电弧的电流被设定为400A而其电压在从大约60V到大约80V的范围内振荡。 远程电弧的电流从阴极靶贯穿V形屏蔽件传播，该屏蔽件对于真空电弧等离子体的重组 分(金属离子、原子和宏观粒子)并非透明的，同时允许远程电弧放电的电子流从圆柱 形阴极靶朝向由涂布室壁定位的远程阳极传导。将待涂布基板装载到转台上，该转台允 许基板围绕涂布室的中心且同时围绕其自身轴线旋转。将-300V的偏压电压施加到具有 待涂布基板的转台。离子清洗阶段持续30分钟，然后为远程电弧辅助磁控溅镀(RAAMS) 沉积阶段。在沉积阶段的开始处，将氮气添加到室以制备压力范围介于2到5毫托的约 30％N2/其余氩气的混合物。由磁控溅镀靶的功率密度大约为5W/cm2的磁控管电源接 通磁控管。TiN涂层沉积阶段期间的基板偏压减少到100V。TiN涂层的沉积持续3小时 以用于沉积5μm厚TiN涂层。
实例2。TiN/DLC 2分段涂层的RAAMS沉积。
装备有4个圆柱形磁控管和中心地定位的圆柱形阴极电弧源的图1中示出的涂布系 统用于此涂布沉积过程。磁控管和阴极电弧源两者都装备有钛靶材。金属网罩电连接到具有待涂布基板的转台以维持罩与基板的相等电势。罩和转台经由开关连接到DC偏压 电源和高电压DC脉冲电源，因此这两个电源中的任一个可以在涂布沉积过程的不同阶 段连接到金属罩和具有待涂布基板的转台。在离子清洗的开始阶段，将氩气作为等离子 体产生气体引入到真空室中，使气体压力介于1到10毫托之间。由在阴极电弧靶的表 面与定位于磁控管源之间的接地屏蔽件之间的机械触发器点燃主电弧放电。接着在圆柱 形阴极靶与由真空涂布沉积室的壁定位的远程阳极之间点燃远程电弧放电。主电弧的电 流被设定为140A而其电压在从大约25V到大约30V的范围内振荡。远程电弧的电流被 设定为400A而其电压在从大约60V到大约80V的范围内振荡。远程电弧的电流正从阴 极靶贯穿V形屏蔽件传播，该屏蔽件对于真空电弧等离子体的重组分(金属离子、原子 和宏观粒子)并非透明的，同时允许远程电弧放电的电子流从圆柱形阴极靶朝向由涂布 室壁定位的远程阳极传导。将待涂布基板装载到转台上，该转台允许基板围绕涂布室的 中心且同时围绕其自身轴线旋转。在离子清洗阶段期间，从罩断开DC脉冲电源并将DC 偏压电源连接到罩，以将-300V的DC偏压电压施加到具有待涂布基板的转台。离子清 洗阶段持续30分钟，然后为远程电弧辅助磁控溅镀(RAAMS)沉积阶段。在沉积阶段 的开始处，将氮气添加到室以制备压力范围介于2到5毫托的约30％N2/其余氩气的混 合物。由磁控溅镀靶的功率密度大约为5W/cm2的磁控管电源接通磁控管。TiN涂层沉 积阶段期间的基板偏压减少到100V DC。TiN涂层的沉积持续1小时以用于沉积1.5μm 厚TiN涂层分段。在完成TiN涂层分段沉积阶段之后，断开磁控管并用乙炔代替作为反 应气体氛围的氩气/氮气混合物直到15毫托的总压力。从罩断开DC偏压电源，并将DC 脉冲偏压电源连接到罩且同时连接到具有待涂布基板的转台。将具有-5kV振幅和30kHz 频率的负DC脉冲电压施加到罩和转台，以在顶部DLC涂层分段的沉积期间建立空心阴 极增强型稠密等离子体云。DLC分段的沉积持续4小时，从而得到对5μm厚DLC顶部 分段层的沉积。
实例3。TiSiNC纳米复合物涂层的RAAMS-阴极电弧混合式沉积。
装备有4个圆柱形磁控管和中心地定位的圆柱形阴极电弧源的图1中示出的涂布系 统用于此涂布沉积过程。磁控管和阴极电弧源两者都装备有与实例1中相同的钛靶材。可调百叶挡板用于两对相对磁控管中的两个磁控管之间，而在邻近对磁控管的磁控管之间安装有固体金属屏蔽件，如图1中所示。在离子清洗的开始阶段，将氩气作为等离子 体产生气体引入到真空室中，使气体压力介于1到10毫托之间。由在阴极电弧靶的表 面与定位于磁控管源之间的接地屏蔽件之间的机械触发器点燃主电弧放电。在离子清洗 的阶段，略微开放百叶挡板，从而阻挡阴极电弧的重组分传播到中心地定位的等离子体 源与室壁之间的涂布沉积区域中，同时允许电子流沿着圆柱形阴极靶与由室壁定位的远 程阳极之间建立的远程电弧放电自由地传播通过百叶挡板的阵列。接着在圆柱形阴极靶 与由真空涂布沉积室的壁定位的远程阳极之间点燃远程电弧放电。主电弧的电流被设定 为140A而其电压在从大约25V到大约30V的范围内振荡。远程电弧的电流被设定为 400A而其电压在从大约60V到大约80V的范围内振荡。将待涂布基板装载到转台上， 该转台允许基板围绕涂布室的中心且同时围绕其自身轴线旋转。由DC偏压电源将-300V 的偏压电压施加到具有待涂布基板的转台，并且同时施加到电连接到转台的金属网罩， 该DC偏压电源被接通而高电压DC脉冲电源被切断。离子清洗阶段持续30分钟，然后 为远程电弧辅助磁控溅镀(RAAMS)沉积阶段。在TiNSiC纳米复合物涂层沉积阶段的 开始处，将氮气和三甲基硅烷(3MS)添加到处理室中的氩气，以制备压力范围介于2 到5毫托的30％N2/10％3MS/其余氩气组成的反应气体混合物。由磁控溅镀靶的功率密 度大约为5W/cm2的磁控管电源接通磁控管。切断DC偏压电源，而接通高电压DC脉 冲电源并将其设定成施加具有30kHz重复频率的5kV负脉冲。约300A的电流沿着圆柱 形磁控管传导，其方向在每一相邻磁控管中切换到相反方向，以在相邻磁控管之间提供 聚焦磁场。调整百叶挡板的带材的位置以使挡板的表面大体上与聚焦磁场相切，从而在 百叶挡板阵列的相邻带材之间产生等离子体输送通道。磁控溅镀金属原子流和磁性聚焦 的阴极电弧金属蒸汽等离子体的方向重合，以提供对纳米复合物TiNSiC涂层的阴极电 弧/磁控管混合式沉积工艺，其持续5小时以用于沉积20μm厚TiNSiC纳米复合物涂层。
虽然上文描述了示范性实施例，但这些实施例不打算描述本发明的所有可能形式。 确切地说，说明书中使用的词为描述性而非限制性的词，且应理解，在不脱离本发明的精神和范围的情况下可以作出各种改变。另外，各种实施实施例的特征可以组合以形成 本发明的其它实施例。

Claims (22)

1.一种涂布系统，其包括：
涂布室，其具有外围室壁、顶壁和底壁，所述外围室壁、所述顶壁和所述底壁界定涂布腔体和室中心；
等离子体源，其定位于所述室中心处，其中所述等离子体源包括中心阴极棒和围绕所述中心阴极棒的多个阴极棒；以及
样品保持器，其固持待涂布的多个基板，所述样品保持器能在距所述室中心第一距离处绕所述室中心旋转。
2.根据权利要求1所述的涂布系统，其进一步包括围绕所述中心阴极棒的中心线圈。
3.根据权利要求1所述的涂布系统，其进一步包括至少一个远程阳极，所述远程阳极接近于所述外围室壁定位于距所述室中心第二距离处。
4.根据权利要求1所述的涂布系统，其中所述多个阴极棒包含1到10个棒形阴极，所述阴极具有被对齐为平行于所述外围室壁的纵向轴线。
5.根据权利要求4所述的涂布系统，其中所述多个阴极棒中的每一阴极棒能绕所述纵向轴线旋转。
6.根据权利要求5所述的涂布系统，其进一步包括多个阻挡屏蔽件，使得阻挡屏蔽件定位于所述多个阴极棒中的交替的若干对阴极棒之间。
7.根据权利要求1所述的涂布系统，其进一步包括插入于所述样品保持器与所述外围室壁之间的第一隔离屏蔽件，和插入于所述等离子体源与所述样品保持器之间的第二隔离屏蔽件。
8.根据权利要求7所述的涂布系统，其中所述第一隔离屏蔽件为外金属网筛且所述第二隔离屏蔽件为内金属网筛。
9.根据权利要求8所述的涂布系统，其中基板被加偏压到与所述内部金属网筛相同的电势。
10.根据权利要求9所述的涂布系统，其进一步包括具有正端子和负端子的DC电源，所述负端子连接到所述第一隔离屏蔽件。
11.根据权利要求1所述的涂布系统，其适用于带负电金属网容器内产生的空心阴极气态等离子体中的离子清洗和离子表面处理。
12.根据权利要求1所述的涂布系统，其适用于等离子体增强磁控溅镀(PEMS)。
13.根据权利要求1所述的涂布系统，其中所述顶壁为定位于所述外围室壁的顶边缘处的顶凸缘，且所述底壁为定位于所述外围室壁的底边缘处的底凸缘。
14.一种涂布系统，其包括：
涂布室，其具有外围室壁、顶壁和底壁，外围室壁、所述顶壁和所述底壁界定涂布腔体和室中心；
等离子体源，其定位于所述室中心处，其中所述等离子体源包括中心阴极棒；
样品保持器，其固持待涂布的多个基板，所述样品保持器能在距所述室中心第一距离处绕所述室中心旋转；以及
定位在所述涂布室外部的第一同轴磁性线圈和定位在所述涂布室外部的第二同轴磁性线圈。
15.根据权利要求14所述的涂布系统，其中所述第一同轴磁性线圈接近于所述外围室壁定位，且所述第二同轴磁性线圈接近于所述外围室壁定位。
16.根据权利要求14所述的涂布系统，其进一步包括围绕所述中心阴极棒的中心线圈。
17.根据权利要求14所述的涂布系统，其进一步包括至少一个远程阳极，所述远程阳极接近于所述外围室壁定位于距所述室中心第二距离处。
18.根据权利要求14所述的涂布系统，其进一步包括围绕所述中心阴极棒的多个阴极棒。
19.根据权利要求18所述的涂布系统，其中所述多个阴极棒中的每一阴极棒能绕纵向轴线旋转。
20.根据权利要求18所述的涂布系统，其进一步包括多个阻挡屏蔽件，使得阻挡屏蔽件定位于所述多个阴极棒中的交替的若干对阴极棒之间。
21.根据权利要求14所述的涂布系统，其进一步包括插入于所述样品保持器与所述外围室壁之间的第一隔离屏蔽件，和插入于所述等离子体源与所述样品保持器之间的第二隔离屏蔽件。
22.根据权利要求21所述的涂布系统，其中所述第一隔离屏蔽件为外金属网筛且所述第二隔离屏蔽件为内金属网筛。
CN201910917581.8A 2018-10-24 2019-09-26 涂布系统 Pending CN111088480A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/169,776 US10900116B2 (en) 2018-10-24 2018-10-24 PVD system with remote arc discharge plasma assisted process
US16/169,776 2018-10-24

Publications (1)

Publication Number Publication Date
CN111088480A true CN111088480A (zh) 2020-05-01

Family

ID=67070609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910917581.8A Pending CN111088480A (zh) 2018-10-24 2019-09-26 涂布系统

Country Status (9)

Country Link
US (1) US10900116B2 (zh)
EP (2) EP4080544A1 (zh)
JP (1) JP2020066801A (zh)
CN (1) CN111088480A (zh)
BR (1) BR102019022150A2 (zh)
CA (1) CA3047917C (zh)
ES (1) ES2928355T3 (zh)
PL (1) PL3644342T3 (zh)
RU (1) RU2019133311A (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904362A (en) * 1987-07-24 1990-02-27 Miba Gleitlager Aktiengesellschaft Bar-shaped magnetron or sputter cathode arrangement
EP0508612A2 (en) * 1991-03-20 1992-10-14 Vapor Technologies Inc. Apparatus and method for coating a substrate using vacuum arc evaporation
CN1539154A (zh) * 2001-06-05 2004-10-20 ��ʿ-����˹�ɷ����޹�˾ 电弧蒸发装置
US20050230387A1 (en) * 2004-04-14 2005-10-20 Michael Regan Insulated RF suppressor for industrial magnetrons
CN106119780A (zh) * 2015-05-07 2016-11-16 蒸汽技术公司 一种涂布系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT392291B (de) 1987-09-01 1991-02-25 Miba Gleitlager Ag Stabfoermige sowie magnetron- bzw. sputterkathodenanordnung, sputterverfahren, und vorrichtung zur durchfuehrung des verfahrens
US9793098B2 (en) * 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904362A (en) * 1987-07-24 1990-02-27 Miba Gleitlager Aktiengesellschaft Bar-shaped magnetron or sputter cathode arrangement
EP0508612A2 (en) * 1991-03-20 1992-10-14 Vapor Technologies Inc. Apparatus and method for coating a substrate using vacuum arc evaporation
CN1539154A (zh) * 2001-06-05 2004-10-20 ��ʿ-����˹�ɷ����޹�˾ 电弧蒸发装置
US20050230387A1 (en) * 2004-04-14 2005-10-20 Michael Regan Insulated RF suppressor for industrial magnetrons
CN106119780A (zh) * 2015-05-07 2016-11-16 蒸汽技术公司 一种涂布系统

Also Published As

Publication number Publication date
EP3644342A1 (en) 2020-04-29
CA3047917A1 (en) 2020-04-24
RU2019133311A (ru) 2021-04-21
EP3644342B1 (en) 2022-08-03
US20200131620A1 (en) 2020-04-30
JP2020066801A (ja) 2020-04-30
ES2928355T3 (es) 2022-11-17
BR102019022150A2 (pt) 2020-05-05
PL3644342T3 (pl) 2022-10-31
EP4080544A1 (en) 2022-10-26
US10900116B2 (en) 2021-01-26
CA3047917C (en) 2021-07-13

Similar Documents

Publication Publication Date Title
CN111088472B (zh) 涂布系统
US10056237B2 (en) Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9793098B2 (en) Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) Remote arc discharge plasma assisted processes
RU2695685C2 (ru) Плазменно-иммерсионная ионная обработка и осаждение покрытий из паровой фазы при содействии дугового разряда низкого давления
EP2778254B1 (en) Low pressure arc plasma immersion coating vapor deposition and ion treatment
KR20000053175A (ko) 하전입자원
EP3091560A1 (en) Remote arc discharge plasma assisted system
KR20110118622A (ko) 자체 세정 애노드를 포함하는 폐쇄 드리프트 자계 이온 소스 장치와 이 장치를 사용하여 기판을 개질하는 방법
WO2015134108A1 (en) Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition
TW200830390A (en) Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
WO2006013968A1 (ja) 薄膜形成装置
US20070256927A1 (en) Coating Apparatus for the Coating of a Substrate and also Method for Coating
USRE30401E (en) Gasless ion plating
EP2431995A1 (en) Ionisation device
KR102533881B1 (ko) 단일 빔 플라즈마 소스
CN111088480A (zh) 涂布系统
JP2013147711A (ja) 気相成長装置
JP4767613B2 (ja) 成膜装置
KR20160130666A (ko) 마그네트론 스퍼터링 증착 장치 및 증착 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination