CN111081887B - OLED device, preparation method thereof and OLED display device - Google Patents

OLED device, preparation method thereof and OLED display device Download PDF

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CN111081887B
CN111081887B CN201811220741.5A CN201811220741A CN111081887B CN 111081887 B CN111081887 B CN 111081887B CN 201811220741 A CN201811220741 A CN 201811220741A CN 111081887 B CN111081887 B CN 111081887B
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layer
electric field
field buffer
blocking layer
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CN111081887A (en
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谷朝辉
李艳虎
李博
李贵芳
曹四振
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EverDisplay Optronics Shanghai Co Ltd
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    • H—ELECTRICITY
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
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Abstract

The embodiment of the invention discloses an OLED device, a preparation method thereof and an OLED display device. The OLED device comprises a first electrode, a first carrier transmission layer, a second carrier barrier layer, a light emitting layer and a second electrode which are sequentially stacked on one side of a substrate; a first electric field buffer layer is arranged between the first carrier transmission layer and the second carrier barrier; the first electric field buffer layer is used for avoiding the accumulation of charges between the first carrier transmission layer and the second carrier barrier layer; the first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole. The technical scheme of the invention can promote the injection of the first current carrier, reduce the working voltage of the OLED device, slow down the cracking speed of the light-emitting layer and prolong the service life of the OLED device.

Description

OLED device, preparation method thereof and OLED display device
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to an OLED device, a preparation method thereof and an OLED display device.
Background
An Organic Light Emitting Diode (OLED) is an Organic thin film electroluminescent device, and has the advantages of simple preparation process, low cost, and the like, and is widely applied to display technologies.
During the development of OLED devices, researchers have found that interface problems between functional layers are key factors affecting the light emitting efficiency and lifetime of OLED devices. For example, when the electric field at the interface of the hole transport layer and the electron blocking layer is drastically changed, a large amount of positive charge accumulation occurs at the interface of the hole transport layer and the electron blocking layer; when the electric field at the interface of the electron transport layer and the hole blocking layer is changed sharply, the accumulation of a large amount of negative charges is also generated at the interface of the electron transport layer and the hole blocking layer, and the phenomenon can obstruct the injection of holes or electrons and accelerate the cracking of the light emitting material, thereby reducing the service life of the OLED device.
Disclosure of Invention
The invention provides an OLED device, a preparation method thereof and an OLED display device, which are used for avoiding the accumulation of charges between a first carrier transmission layer and a second carrier blocking layer, thereby promoting the injection of a first carrier, reducing the working voltage of the OLED device, slowing down the cracking speed of a light emitting layer and prolonging the service life of the OLED device.
In a first aspect, an embodiment of the present invention provides an OLED device, including a first electrode, a first carrier transport layer, a second carrier blocking layer, a light emitting layer, and a second electrode, which are sequentially stacked on one side of a substrate;
a first electric field buffer layer is arranged between the first carrier transmission layer and the second carrier barrier; the first electric field buffer layer is used for avoiding the accumulation of charges between the first carrier transmission layer and the second carrier barrier layer; the first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole.
Further, the OLED device further includes: a first carrier blocking layer and a second carrier transport layer; the second carrier transport layer is positioned between the light-emitting layer and the second electrode; the first carrier barrier layer is positioned between the light emitting layer and the second carrier transmission layer; and a second electric field buffer layer is arranged between the first carrier barrier layer and the second carrier transmission layer and is used for avoiding the aggregation of charges between the second carrier transmission layer and the first carrier barrier layer.
Further, the material of the first electric field buffer layer comprises a second carrier barrier layer material and a doping material; the second carrier is an electron, and when the first carrier is a hole, the doped material is P-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is N-type.
Further, the material of the first electric field buffer layer includes a second carrier blocking layer material and a first carrier transport layer material.
Further, the second electric field buffer layer material comprises a first carrier barrier layer material and a doping material; the second carrier is an electron, and when the first carrier is a hole, the doping material is N-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is P-type.
Further, the second electric field buffer layer material includes a first carrier blocking layer material and a second carrier transport layer material.
Furthermore, the roughness of the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer and the roughness of the surface of one side, facing the first carrier transmission layer, of the second carrier barrier layer are larger than a first preset value; the first carrier transmission layer with the first preset thickness faces one side of the second carrier blocking layer, and the second carrier blocking layer with the second preset thickness faces one side of the first carrier transmission layer, so that the first electric field buffer layer is formed.
Furthermore, the roughness of the surface of one side, facing the second carrier transmission layer, of the first carrier blocking layer and the roughness of the surface of one side, facing the first carrier blocking layer, of the second carrier transmission layer are larger than a second preset value; the first carrier blocking layer faces one side of the second carrier transmission layer, the first carrier blocking layer with the third preset thickness is formed, and the second carrier transmission layer faces one side of the first carrier blocking layer, the second carrier transmission layer with the fourth preset thickness is formed to form a second electric field buffer layer.
In a second aspect, embodiments of the present invention further provide an OLED display device, which includes the OLED device according to the first aspect.
In a third aspect, an embodiment of the present invention further provides a method for manufacturing an OLED device, including:
sequentially forming a first electrode, a first carrier transmission layer, a first electric field buffer layer, a second carrier barrier layer, a light-emitting layer and a second electrode which are stacked on one side of a substrate;
the first electric field buffer layer is used for avoiding the accumulation of charges between the first carrier transmission layer and the second carrier blocking layer; the first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole.
Further, before forming the second electrode, the method further comprises: sequentially forming a first carrier blocking layer, a second electric field buffer layer and a second carrier transmission layer which are stacked; the second electric field buffer layer is used for avoiding the accumulation of charges between the second carrier transmission layer and the first carrier blocking layer.
Further, the forming the first electric field buffer layer includes: evaporating a second carrier barrier layer material and a doping material to one side, facing the second carrier barrier layer, of the first carrier transmission layer together to form a first electric field buffer layer; the second carrier is an electron, and when the first carrier is a hole, the doping material is P-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is N-type.
Further, the forming the first electric field buffer layer includes: and evaporating the second carrier barrier layer material and the first carrier transmission layer material to one side of the first carrier transmission layer, which faces the second carrier barrier layer, so as to form a first electric field buffer layer.
Further, the forming of the second electric field buffer layer includes: and evaporating the material of the first carrier barrier layer and the doping material to one side of the first carrier barrier layer facing the second carrier transmission layer together to form a second electric field buffer layer.
Further, the forming of the second electric field buffer layer includes: and evaporating the first carrier barrier layer material and the second carrier transmission layer material to one side of the first carrier barrier layer facing the second carrier transmission layer together to form a second electric field buffer layer.
Further, the forming the first electric field buffer layer includes: roughening the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer; evaporating a second carrier barrier layer material on the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer;
the roughness of the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer and the roughness of the surface of one side, facing the first carrier transmission layer, of the second carrier barrier layer are larger than a first preset value; the first carrier transmission layer with the first preset thickness faces one side of the second carrier blocking layer, and the second carrier blocking layer with the second preset thickness faces one side of the first carrier transmission layer, so that the first electric field buffer layer is formed.
Further, the forming of the second electric field buffer layer includes: roughening the surface of one side, facing the second carrier transmission layer, of the first carrier barrier layer; evaporating a second carrier transport layer material on the surface of one side, facing the second carrier transport layer, of the first carrier barrier layer;
the roughness of the surface of one side, facing the second carrier transmission layer, of the first carrier barrier layer and the roughness of the surface of one side, facing the first carrier barrier layer, of the second carrier transmission layer are larger than a second preset value; the first carrier blocking layer faces one side of the second carrier transmission layer, the first carrier blocking layer with the third preset thickness is formed, and the second carrier transmission layer faces one side of the first carrier blocking layer, the second carrier transmission layer with the fourth preset thickness is formed to form a second electric field buffer layer.
The OLED device comprises a first electrode, a first carrier transmission layer, a second carrier blocking layer, a light emitting layer and a second electrode which are sequentially stacked on one side of a substrate; a first electric field buffer layer is arranged between the first carrier transmission layer and the second carrier barrier; the first electric field buffer layer is used for avoiding the accumulation of charges between the first carrier transmission layer and the second carrier barrier layer; the first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole. According to the technical scheme provided by the embodiment of the invention, the first electric field buffer layer is inserted between the first carrier transmission layer and the second carrier blocking layer, so that the accumulation of charges between the first carrier transmission layer and the second carrier blocking layer is avoided, the injection of the first carrier is promoted, the working voltage of the OLED device is reduced, the cracking speed of the light emitting layer is reduced, and the service life of the OLED device is prolonged.
Drawings
FIG. 1 is a diagram of an OLED device according to an embodiment of the present invention;
FIG. 2 is a schematic representation of positive charge accumulation at the interface of a hole transport layer and an electron blocking layer provided by embodiments of the present invention;
FIG. 3 is a block diagram of another OLED device provided by an embodiment of the present invention;
fig. 4 is an OLED display device according to an embodiment of the present invention;
FIG. 5 is a flow chart of a method for fabricating an OLED device according to an embodiment of the present invention;
FIG. 6 is a flow chart of another method for fabricating an OLED device according to an embodiment of the present invention;
fig. 7 is a graph showing the results of performance tests of OLED devices prepared using the first hole transport layer material and the second hole transport layer material.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a structural diagram of an OLED device according to an embodiment of the present invention. The organic electroluminescent device includes a first electrode 100, a first carrier transport layer 210, a first electric field buffer layer 220, a second carrier block layer 230, a light emitting layer 240, and a second electrode 300, which are sequentially stacked on one side of a substrate (not shown).
The first electric field buffer layer 220 is used to prevent charge accumulation between the first carrier transport layer 210 and the second carrier blocking layer 230. The first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole.
When the first electric field buffer layer 220 is not disposed between the first carrier transport layer 210 and the second carrier blocking layer 230, when an electric field is rapidly changed at an interface between the first carrier transport layer 210 and the second carrier blocking layer 230, according to the gaussian theorem, a large amount of charges are collected at the interface, and if the first carrier is a hole and the second carrier is an electron, a large amount of positive charges are collected at the interface; if the first carriers are electrons and the second carriers are holes, a large amount of negative charges are accumulated at the interface, and the first carriers are holes and the second carriers are electrons, which will be described in detail below as an example.
FIG. 2 is a schematic diagram of positive charge accumulation at the interface of a hole transport layer and an electron blocking layer provided by an embodiment of the present invention. When a sharp change in electric field occurs at the interface of the first carrier transport layer (hole transport layer) 210 and the second carrier blocking layer (electron blocking layer) 230, a large amount of positive charges are accumulated at the interface of the first carrier transport layer (hole transport layer) 210 and the second carrier blocking layer (electron blocking layer) 230, which generates an electric field E directed to the second carrier blocking layer (electron blocking layer) 230 and the first carrier transport layer (hole transport layer) 2101And E2. On the one hand, the electric field E directed to the first carrier transport layer (hole transport layer) 2102An electric field E applied to the first carrier transport layer (hole transport layer) 210oWeakening occurs, making hole injection difficult, resulting in an increase in operating voltage of the OLED device. On the other hand, the electric field E directed to the second carrier block layer (electron block layer) 2301An electric field E will be applied to the interface of the second carrier blocking layer (electron blocking layer) 230 and the light emitting layer 240oAn enhancement effect is generated, so that polar molecules at the interface of the second carrier blocking layer (electron blocking layer) 230 and the light emitting layer 240 are stretched, and the photoelectric properties of the material at the interface are changed; since a large amount of positive charges are accumulated at the interface of the first carrier transport layer (hole transport layer) 210 and the second carrier blocking layer (electron blocking layer) 230, a large amount of negative charges are induced at the interface of the second carrier blocking layer (electron blocking layer) 230 and the light emitting layer 240, so that the polaron concentration of the light emitting layer 240 is increased, the light emitting material of the light emitting layer 240 is accelerated to crack, and the service life of the OLED device is further reduced.
It is understood that if the first carrier is an electron and the second carrier is a hole, and when an electric field is rapidly changed at an interface between the electron transport layer and the hole blocking layer, a large amount of negative charges may be collected at the interface, which is similar to the mechanism of collecting a large amount of positive charges at the interface between the first carrier transport layer (hole transport layer) 210 and the second carrier blocking layer (electron blocking layer) 230, and the description thereof is omitted here.
Optionally, the material of the first electric field buffer layer 220 includes a second carrier blocking layer material and a doping material.
The second carrier is an electron, and when the first carrier is a hole, the doping material is P-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is N-type. The first electric field buffer layer 220 may increase conductivity at the interface of the first carrier transport layer 210 and the second carrier blocking layer 230 and reduce an energy level difference between the first carrier transport layer 210 and the second carrier blocking layer 230, thereby alleviating the accumulation of charges at the interface. Optionally, the first electric field buffer layer 220 has a thickness of
Figure BDA0001834698370000081
The thickness of the first electric field buffer layer 220 is determined in consideration of two factors. First, the doping efficiency of the second carrier blocking layer material to the doping material is high or low, and if the doping efficiency is high, the thickness of the first electric field buffer layer 220 is relatively small to avoid the absorption of the doping material to light; secondly, the carrier balance of the OLED device itself, the doping material will significantly enhance the injection and transport of the first carrier, so the thickness and concentration should be optimized to ensure that the original balance of the OLED device is not significantly changed. It is also noted that the thickness of the second carrier blocking layer 230, and the thickness of the second carrier blocking layer 230, is thick enough to ensure that the dopant material does not contact the emissive layer 240 to cause exciton quenching.
Optionally, the material of the first electric field buffer layer 220 includes a second carrier blocking layer material and a first carrier transport layer material.
The first electric field buffer layer 220 is formed by mixing the material of the first carrier transport layer 210 and the material of the second carrier blocking layer 230, so that the contact area between the first carrier transport layer 210 and the second carrier blocking layer 230 can be increased, the transport capability of the first carrier at the interface can be further increased, and the accumulation of charges at the interface can be relieved. Optionally, the first electric field buffer layer 220 has a thickness of
Figure BDA0001834698370000082
Illustratively, when the first carrier is a hole and the second carrier is an electron, the first electric field buffer layer 220 material is a second carrier blocking layer 230 (electron blocking layer) material and a first carrier transport layer 210 (hole transport layer) material, the second carrier blocking layer 230 (electron blocking layer) material requires a Lower Unoccupied Molecular Orbital (LOMO) to be shallow to ensure that the electron can be blocked, and a triplet level is larger to ensure that exciton energy is not transferred; the hole mobility of the first carrier transport layer 210 (hole transport layer) material is much higher than the electron mobility, and has a suitable Highest Occupied Molecular Orbital (HOMO) to ensure that holes are injected smoothly into the first electrode 100; if the hole injection layer is included in the OLED device, the LUMO of the P-type dopant material doped in the hole injection layer is slightly higher than the HOMO of the material of the first carrier transport layer 210 (hole transport layer), and has higher doping efficiency.
Optionally, the roughness of the surface of the first carrier transport layer 210 facing the second carrier blocking layer 230 and the surface of the second carrier blocking layer 230 facing the first carrier transport layer 210 is greater than a first preset value; the first electric field buffer layer 220 is formed by the first carrier transport layer 210 with a first predetermined thickness on the side of the first carrier transport layer 210 facing the second carrier blocking layer 230, and the second carrier blocking layer 230 with a second predetermined thickness on the side of the second carrier blocking layer 230 facing the first carrier transport layer 210.
Because the roughness of the surface of the first carrier transport layer 210 facing the second carrier blocking layer 230 and the roughness of the surface of the second carrier blocking layer 230 facing the first carrier transport layer 210 are greater than the preset value, the contact area at the interface between the first carrier transport layer 210 and the second carrier blocking layer 230 is larger, so that the transport capability of the first carrier at the interface is improved, and the charge aggregation at the interface is further relieved.
It should be noted that the roughness of the surface of the first carrier transport layer 210 facing the second carrier blocking layer 230, the first predetermined thickness of the first carrier transport layer 210 facing the second carrier blocking layer 230 and the second predetermined thickness of the second carrier blocking layer 230 facing the first carrier transport layer 210, which form the first electric field buffer layer 220, may be set according to the materials and actual requirements of the first carrier transport layer 210 and the second carrier blocking layer, which is not limited in the embodiment of the present invention.
The OLED device provided in the embodiment of the present invention includes a first electrode 100, a first carrier transport layer 210, a first electric field buffer layer 220, a second carrier blocking layer 230, a light emitting layer 240, and a second electrode 300, which are sequentially stacked on one side of a substrate, where a first carrier is a hole and a second carrier is an electron, or the first carrier is an electron and the second carrier is a hole. By inserting the first electric field buffer layer 220 between the first carrier transport layer 210 and the second carrier blocking layer 230, the accumulation of charges between the first carrier transport layer 210 and the second carrier blocking layer 230 is avoided, the injection of the first carrier can be promoted, the operating voltage of the OLED device is reduced, the cracking speed of the light emitting layer 240 is reduced, and the service life of the OLED device is prolonged.
Fig. 3 is a structural diagram of another OLED device provided in an embodiment of the present invention. The OLED device further includes: the light emitting device comprises a first carrier blocking layer 250, a second electric field buffer layer 260 and a second carrier transport layer 270, wherein the second carrier transport layer 270 is located between the light emitting layer 240 and the second electrode 300, the first carrier blocking layer 250 is located between the light emitting layer 240 and the second carrier transport layer 270, and the second electric field buffer layer 260 is arranged between the first carrier blocking layer 250 and the second carrier transport layer 270 and used for avoiding the accumulation of charges between the second carrier transport layer 270 and the first carrier blocking layer 250.
It should be noted that, by inserting the second electric field buffer layer 260 between the second carrier transport layer 270 and the first carrier blocking layer 250, the accumulation of charges between the second carrier transport layer 270 and the first carrier blocking layer 250 is avoided, thereby promoting the injection of the second carrier, reducing the operating voltage of the OLED device, slowing down the cracking speed of the light emitting layer 240, and improving the lifetime of the OLED device.
Optionally, the material of the second electric field buffer layer 260 includes a first carrier blocking layer material and a doping material; the second carrier is an electron, and when the first carrier is a hole, the doping material is N-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is P-type.
Optionally, the material of the second electric field buffer layer 260 includes a first carrier blocking layer material and a second carrier transport layer material.
Optionally, the roughness of the surface of the first carrier blocking layer 250 facing to the side of the second carrier transport layer 270, and the roughness of the surface of the second carrier transport layer 270 facing to the side of the first carrier blocking layer 250 are greater than a second preset value; the first carrier blocking layer 250 faces the second carrier transport layer 270 side, and the first carrier blocking layer with a third preset thickness and the second carrier transport layer 270 faces the first carrier blocking layer 250 side, and the second carrier transport layer with a fourth preset thickness form the second electric field buffer layer 260.
It should be noted that the roughness of the surface of the first carrier blocking layer 260 facing the second carrier transport layer 270, the third predetermined thickness of the first carrier blocking layer 250 forming the second electric field buffer layer 260 facing the second carrier transport layer 270, and the fourth predetermined thickness of the second carrier transport layer 270 facing the first carrier blocking layer 250 may be set according to the materials and actual requirements of the first carrier blocking layer 260 and the second carrier transport layer 270, which are not limited in the embodiment of the present invention.
Optionally, a first carrier injection layer and a second carrier injection layer may be further included, the first carrier injection layer being located between the first electrode 100 and the first carrier transport layer 210, and the second carrier injection layer being located between the second electrode 300 and the second carrier transport layer 270.
It should be noted that the thicknesses and material selections of the first electrode 100, the first carrier transport layer 210, the second carrier blocking layer 230, the light emitting layer 240, the second carrier transport layer 270, the first carrier blocking layer 250, and the second electrode 300 may be selected according to actual requirements, and the embodiment of the invention is not limited thereto.
Fig. 4 is an OLED display device according to an embodiment of the present invention. The OLED device 10 includes the OLED device 110 described above.
Since the OLED device 10 includes any one of the OLED devices 110 described above, the OLED device 10 has the same or corresponding functions and advantages as the OLED device 110 included therein.
Based on the above inventive concept, an embodiment of the present invention further provides a method for manufacturing an OLED device, and fig. 5 is a flowchart of the method for manufacturing an OLED device according to the embodiment of the present invention. The method specifically comprises the following steps:
and S110, sequentially forming a first electrode and a first carrier transmission layer which are stacked on one side of the substrate.
And S120, forming a first electric field buffer layer on the side, far away from the first electrode, of the first carrier transmission layer.
And S130, sequentially forming a second carrier blocking layer, a light emitting layer and a second electrode which are stacked on one side of the first electric field buffer layer, which is far away from the first carrier transmission layer.
The first electric field buffer layer is used for avoiding the accumulation of charges between the first carrier transmission layer and the second carrier blocking layer; the first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole.
For example, the first electrode is an anode, the anode material may be an ITO thin film, the second electrode is a cathode, the cathode material may be aluminum, and the first carrier transport layer, the second carrier blocking layer, and the light emitting layer may be formed by vacuum evaporation.
It should be noted that the first electrode, the first carrier transport layer, the second carrier blocking layer, the light emitting layer, and the second electrode may be formed in a manner known to those skilled in the art, and the thickness and material selection of the above layers may be selected according to actual requirements, which is not limited in the embodiments of the present invention.
According to the technical scheme provided by the embodiment of the invention, the first electric field buffer layer is inserted between the first carrier transmission layer and the second carrier blocking layer, so that the accumulation of charges between the first carrier transmission layer and the second carrier blocking layer is avoided, the injection of the first carrier is promoted, the working voltage of the OLED device is reduced, the cracking speed of the light emitting layer is reduced, and the service life of the OLED device is prolonged.
Optionally, the forming the first electric field buffer layer includes: evaporating a second carrier barrier layer material and a doping material to one side, facing the second carrier barrier layer, of the first carrier transmission layer together to form a first electric field buffer layer; the second carrier is an electron, and when the first carrier is a hole, the doping material is P-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is N-type.
Optionally, the forming the first electric field buffer layer includes: and evaporating the second carrier barrier layer material and the first carrier transmission layer material to one side of the first carrier transmission layer, which faces the second carrier barrier layer, so as to form a first electric field buffer layer.
Optionally, the forming the first electric field buffer layer includes: roughening the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer; evaporating a second carrier barrier layer material on the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer;
the roughness of the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer and the roughness of the surface of one side, facing the first carrier transmission layer, of the second carrier barrier layer are larger than a first preset value; the first carrier transmission layer with the first preset thickness faces one side of the second carrier blocking layer, and the second carrier blocking layer with the second preset thickness faces one side of the first carrier transmission layer, so that the first electric field buffer layer is formed.
Compared with the method of co-evaporation, in which the material of the first electric field buffer layer 220 is evaporated on the surface of the first carrier transport layer 210 facing the second carrier barrier layer 230 to obtain the first electric field buffer layer 220, the number of evaporation chambers in actual production can be reduced by performing surface roughening treatment on the surface of the first carrier transport layer 210 facing the second carrier barrier layer 230 and the surface of the second carrier barrier layer 230 facing the first carrier transport layer 210 to obtain the first electric field buffer layer 220, so that the production speed is increased. However, some materials may not be able to produce a rough interface, and therefore, when selecting the materials of the first carrier transport layer 210 and the second carrier blocking layer 230, the materials capable of producing a rough interface should be selected.
FIG. 6 is a flow chart of another method for fabricating an OLED device according to an embodiment of the present invention. The method specifically comprises the following steps:
and S210, sequentially forming a first electrode and a first carrier transmission layer which are stacked on one side of the substrate.
And S220, forming a first electric field buffer layer on one side, far away from the first electrode, of the first carrier transport layer.
And S230, sequentially forming a second carrier blocking layer, a light emitting layer and a first carrier blocking layer which are stacked on one side of the first electric field buffer layer, which is far away from the first carrier transmission layer.
And S240, forming a second electric field buffer layer on the side, far away from the light emitting layer, of the first carrier blocking layer.
And S250, sequentially forming a second carrier transmission layer and a second electrode which are stacked on one side, far away from the first carrier barrier layer, of the second electric field buffer layer.
The second electric field buffer layer is used for avoiding the accumulation of charges between the second carrier transmission layer and the first carrier blocking layer.
It should be noted that fig. 6 is only an exemplary method, and besides the above functional layers, a first carrier injection layer and a second carrier injection layer may be further included, which may be set according to actual requirements, and this is not limited in the embodiment of the present invention.
It should be noted that, by inserting the first electric field buffer layer between the first carrier transport layer and the second carrier blocking layer, the aggregation of charges between the first carrier transport layer and the second carrier blocking layer is avoided, and by inserting the second electric field buffer layer between the second carrier transport layer and the first carrier blocking layer, the aggregation of charges between the second carrier transport layer and the first carrier blocking layer is avoided, which can promote the injection of the first carrier and the second carrier, reduce the operating voltage of the OLED device, slow down the cracking speed of the light emitting layer, and improve the lifetime of the OLED device.
Optionally, forming the second electric field buffer layer includes: and evaporating the material of the first carrier barrier layer and the doping material to one side of the first carrier barrier layer facing the second carrier transmission layer together to form a second electric field buffer layer.
Optionally, forming the second electric field buffer layer includes: and evaporating the first carrier barrier layer material and the second carrier transmission layer material to one side of the first carrier barrier layer facing the second carrier transmission layer together to form a second electric field buffer layer.
Optionally, the forming the first electric field buffer layer includes: roughening the surface of one side, facing the second carrier transmission layer, of the first carrier barrier layer; evaporating a second carrier transport layer material on the surface of one side, facing the second carrier transport layer, of the first carrier barrier layer;
the roughness of the surface of one side, facing the second carrier transmission layer, of the first carrier barrier layer and the roughness of the surface of one side, facing the first carrier barrier layer, of the second carrier transmission layer are larger than a second preset value; the first carrier blocking layer faces one side of the second carrier transmission layer, the first carrier blocking layer with the third preset thickness is formed, and the second carrier transmission layer faces one side of the first carrier blocking layer, the second carrier transmission layer with the fourth preset thickness is formed to form a second electric field buffer layer.
Fig. 7 is a graph showing the results of performance tests of OLED devices prepared using the first hole transport layer material and the second hole transport layer material. The abscissa represents time, the ordinate represents the percentage of the current luminance relative to the initial luminance, and the structure of the OLED device represented by S1 comprises an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked on one side of a substrate, wherein the hole transport layer is made of a first hole transport layer material; the structure of the OLED device represented by S2 comprises an anode, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked on one side of a substrate, wherein the hole transport layer is made of a second hole transport layer material; the structure of the OLED device represented by S3 comprises an anode, a hole injection layer, a hole transport layer, a first electric field buffer layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked on one side of a substrate, wherein the hole transport layer is made of a second hole transport layer material, and the first electric field buffer layer material comprises the second hole transport layer material and a P-type doped material; the structure of the OLED device represented by S4 comprises an anode, a hole injection layer, a hole transport layer, a first electric field buffer layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked on one side of a substrate, wherein the hole transport layer is made of a second hole transport layer material, and the first electric field buffer layer material comprises the second hole transport layer material and the electron blocking layer material; the structure of the OLED device represented by S5 comprises an anode, a hole injection layer, a hole transport layer, a first electric field buffer layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked on one side of a substrate, wherein the hole transport layer is made of a second hole transport layer material, the first electric field buffer layer is obtained by roughening the surface of the hole transport layer facing the electron blocking layer and evaporating an electron blocking layer material on the surface of the hole transport layer facing the electron blocking layer. Referring to fig. 7, it can be seen that the lifetime of the OLED device manufactured using the second hole transport layer material is improved to be close to that of the OLED device manufactured using the first hole transport layer material by providing the first electric field buffer layer in the OLED device.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (15)

1. An OLED device, comprising:
a first electrode, a first carrier transmission layer, a second carrier barrier layer, a light emitting layer and a second electrode are sequentially stacked on one side of a substrate;
wherein a first electric field buffer layer is arranged between the first carrier transmission layer and the second carrier barrier; the first electric field buffer layer is used for avoiding the aggregation of charges between the first carrier transmission layer and the second carrier blocking layer;
the first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole;
a first carrier blocking layer and a second carrier transport layer;
the second carrier transport layer is positioned between the light emitting layer and the second electrode;
the first carrier blocking layer is positioned between the light emitting layer and the second carrier transmission layer;
and a second electric field buffer layer is arranged between the first carrier blocking layer and the second carrier transmission layer and is used for avoiding the aggregation of charges between the second carrier transmission layer and the first carrier blocking layer.
2. The OLED device of claim 1,
the material of the first electric field buffer layer comprises a second carrier barrier layer material and a doping material;
the second carrier is an electron, and when the first carrier is a hole, the doped material is P-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is N-type.
3. The OLED device of claim 1,
the material of the first electric field buffer layer comprises a second carrier barrier layer material and a first carrier transport layer material.
4. The OLED device of claim 1,
the material of the second electric field buffer layer comprises a first carrier barrier layer material and a doping material;
the second carrier is an electron, and when the first carrier is a hole, the doped material is N-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is P-type.
5. The OLED device of claim 1,
the second electric field buffer layer material comprises a first carrier blocking layer material and a second carrier transport layer material.
6. The OLED device of claim 1, wherein the roughness of the surface of the first carrier transport layer on the side facing the second carrier blocking layer and the surface of the second carrier blocking layer on the side facing the first carrier transport layer is greater than a first preset value; the first carrier transmission layer with a first preset thickness faces the second carrier blocking layer, and the second carrier blocking layer with a second preset thickness faces the first carrier transmission layer, so that the first electric field buffer layer is formed.
7. The OLED device of claim 1, wherein the roughness of the surface of the first carrier blocking layer facing the second carrier transport layer side and the surface of the second carrier transport layer facing the first carrier blocking layer side is greater than a second predetermined value; the first carrier blocking layer faces the first carrier blocking layer at one side of the second carrier transmission layer, the first carrier blocking layer is of a third preset thickness, and the second carrier transmission layer faces the first carrier blocking layer at one side of the second carrier transmission layer, the second carrier transmission layer is of a fourth preset thickness, and the second electric field buffer layer is formed.
8. An OLED display device comprising the OLED device of any one of claims 1-7.
9. A method for manufacturing an OLED device, comprising:
sequentially forming a first electrode, a first carrier transmission layer, a first electric field buffer layer, a second carrier barrier layer, a light-emitting layer and a second electrode which are stacked on one side of a substrate;
wherein the first electric field buffer layer is used for avoiding the aggregation of charges between the first carrier transport layer and the second carrier blocking layer; the first carrier is a hole and the second carrier is an electron; or the first carrier is an electron and the second carrier is a hole;
prior to said forming said second electrode further comprising:
sequentially forming a first carrier blocking layer, a second electric field buffer layer and a second carrier transmission layer which are stacked;
wherein the second electric field buffer layer is configured to avoid accumulation of charges between the second carrier transport layer and the first carrier blocking layer.
10. The method of claim 9, wherein the forming the first electric field buffer layer comprises:
evaporating a second carrier barrier layer material and a doping material to one side, facing the second carrier barrier layer, of the first carrier transmission layer together to form the first electric field buffer layer;
when the first carrier is a hole, the doped material is P-type; the second carrier is a hole, and when the first carrier is an electron, the doped material is N-type.
11. The method of claim 9, wherein the forming the first electric field buffer layer comprises:
and evaporating a second carrier barrier layer material and a first carrier transmission layer material together to one side of the first carrier transmission layer, which faces the second carrier barrier layer, so as to form the first electric field buffer layer.
12. The method of claim 9, wherein the forming the second electric field buffer layer comprises:
and co-evaporating a first carrier barrier layer material and a doping material to one side of the first carrier barrier layer facing the second carrier transmission layer to form the second electric field buffer layer.
13. The method of claim 9, wherein the forming the second electric field buffer layer comprises:
and evaporating a first carrier blocking layer material and a second carrier transmission layer material to one side of the first carrier blocking layer facing the second carrier transmission layer together to form the second electric field buffer layer.
14. The method of claim 9, wherein the forming the first electric field buffer layer comprises:
roughening the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer;
evaporating a second carrier barrier layer material on the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer;
the roughness of the surface of one side, facing the second carrier barrier layer, of the first carrier transmission layer and the roughness of the surface of one side, facing the first carrier transmission layer, of the second carrier barrier layer are larger than a first preset value; the first carrier transmission layer with a first preset thickness faces the second carrier blocking layer, and the second carrier blocking layer with a second preset thickness faces the first carrier transmission layer, so that the first electric field buffer layer is formed.
15. The method of claim 9, wherein the forming the second electric field buffer layer comprises:
roughening a surface of the first carrier blocking layer facing the second carrier transport layer;
evaporating a second carrier transport layer material on the surface of one side, facing the second carrier transport layer, of the first carrier blocking layer;
the roughness of the surface of one side, facing the second carrier transmission layer, of the first carrier blocking layer and the roughness of the surface of one side, facing the first carrier blocking layer, of the second carrier transmission layer are larger than a second preset value; the first carrier blocking layer faces the first carrier blocking layer at one side of the second carrier transmission layer, the first carrier blocking layer is of a third preset thickness, and the second carrier transmission layer faces the first carrier blocking layer at one side of the second carrier transmission layer, the second carrier transmission layer is of a fourth preset thickness, and the second electric field buffer layer is formed.
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