CN111081532B - Method for preparing semiconductor graphite wafer and application thereof - Google Patents
Method for preparing semiconductor graphite wafer and application thereof Download PDFInfo
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- CN111081532B CN111081532B CN201911159264.0A CN201911159264A CN111081532B CN 111081532 B CN111081532 B CN 111081532B CN 201911159264 A CN201911159264 A CN 201911159264A CN 111081532 B CN111081532 B CN 111081532B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 250
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 158
- 239000010439 graphite Substances 0.000 title claims abstract description 158
- 239000004065 semiconductor Substances 0.000 title claims abstract description 116
- 238000000034 method Methods 0.000 title claims abstract description 40
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 92
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 90
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 230000005669 field effect Effects 0.000 claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052796 boron Inorganic materials 0.000 claims abstract description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 41
- 239000000377 silicon dioxide Substances 0.000 claims description 41
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 135
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract description 24
- 239000000463 material Substances 0.000 abstract description 22
- 238000001259 photo etching Methods 0.000 abstract description 22
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000012512 characterization method Methods 0.000 abstract 1
- 238000010924 continuous production Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 60
- 238000000576 coating method Methods 0.000 description 60
- 239000007770 graphite material Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
Abstract
The invention relates to a method for preparing a boron or nitrogen doped semiconductor graphite wafer, which is used for preparing the semiconductor graphite wafer by a method of heating and reducing a boron or nitrogen-containing graphene oxide ethanol solution on the surface of a silicon wafer containing silicon oxide in a spin coating manner. The boron-doped graphite field effect transistor is prepared by using the boron-doped graphite wafer and the nitrogen-doped graphite wafer as channels by utilizing a photoetching method for electrical characterization, and the boron-doped graphite wafer and the nitrogen-doped graphite wafer are respectively P, N type semiconductor materials. The preparation method is simple, can prepare large-area semiconductor graphite wafers, is easy for large-scale continuous production, is a semiconductor graphite wafer material with high carrier mobility, and can be widely applied to the fields of electronic devices, sensors, radio frequency chips, logic chips and the like.
Description
Technical Field
The invention relates to a preparation method of a semiconductor graphite wafer, in particular to a preparation method and application of a boron and nitrogen doped semiconductor graphite wafer.
Background
With the progress and development of modern society, the semiconductor industry is in line with the global manufacturing duet of emerging fields such as intelligent terminals, internet of things, 5G communication, intelligent home, automobile electronics and the like, and occupies most of high-elasticity incremental markets; on the other hand, annual imported products exceeding 2700 billions of dollars replace space, which is not easily liked by other electronic products. The graphene material has the characteristics of extremely excellent carrier mobility, high transparency, high flexibility and the like, and is expected to play an important role in the field of semiconductors. However, it is extremely difficult to prepare large-sized graphene materials, such as: the micro-mechanical stripping highly-oriented pyrolysis graphite method, the chemical vapor deposition method, the graphene oxide method and the like are adopted, so that large-size graphene with excellent properties is difficult to obtain.
Disclosure of Invention
The present invention is directed to a method for simply and controllably preparing a semiconductor graphite wafer to solve the above-mentioned problems.
The invention realizes the purpose through the following technical scheme:
preparing boron or nitrogen-containing graphene oxide into an ethanol solution with the concentration of 0.05-10mg/ml, spin-coating the solution on the surface of a silicon wafer containing silicon oxide by a spin coater at the rotating speed of 300-6000rpm, drying, placing the silicon wafer in an atmosphere furnace, and carrying out constant-temperature heat treatment at the temperature of 200-500 ℃ for 5-60 minutes to obtain the semiconductor graphite wafer.
Preferably, the boron content of the boron-containing graphene oxide is 0.05-10%, and more preferably 0.1-2%.
Preferably, the nitrogen content of the nitrogen-containing graphene oxide is 0.1 to 12%, and more preferably 0.2 to 3%.
Preferably, the concentration of the boron or nitrogen-containing graphene oxide in the ethanol solution is 0.5-2mg/ml.
Preferably, the rotating speed of the spin coater is 3000-6000 rpm.
Preferably, the temperature of the heat treatment is 300 to 450 ℃.
Preferably, the constant temperature time of the heat treatment is 10 to 30 minutes.
Preferably, the atmosphere of the atmosphere furnace is one of hydrogen, argon and nitrogen.
Preferably, the silicon wafer containing silicon oxide comprises a silicon substrate and a silicon dioxide insulating layer, and the thickness of the silicon dioxide insulating layer is 30-500nm.
The semiconductor graphite wafer prepared by the method is applied to a field effect tube.
The invention has the beneficial effects that:
coating a graphene oxide ethanol solution containing boron or nitrogen on the surfaces of silicon wafers containing silicon dioxide insulating layers with different sizes by using a spin coating method to obtain a graphene oxide coating containing boron or nitrogen, heating the graphene oxide coating in a tubular furnace to remove atoms such as oxygen, hydrogen and sulfur to obtain a thermal reduction graphene oxide coating, namely a graphite coating doped with boron or nitrogen, and preparing the graphite coating into a field effect tube by using the processes such as photoetching, magnetron sputtering and the like to obtain the semiconductor graphite chip with high carrier mobility.
Compared with the prior art, the invention has the following special effects:
(1) The semiconductor graphite wafer obtained by the method of thermal reduction after spin coating of the boron-containing or nitrogen-oxidized graphene is an excellent semiconductor graphite material and can be widely applied to the fields of electronic devices, integrated circuits, industrial catalysis, aerospace and the like; (2) The preparation method disclosed by the invention is simple, is easy to realize continuous preparation, and has the characteristics of low cost, easiness in scale production and the like.
Detailed Description
The present invention is specifically described below by way of examples, but the technical scope of the present invention is not limited to these examples.
The invention is carried out according to the following steps:
a, mixing boron or nitrogen-containing graphene oxide with ethanol to prepare an ethanol solution, wherein the concentration of the boron or nitrogen-containing graphene oxide is 0.05-10mg/ml;
b, carrying out spin coating on the surface of a silicon wafer containing silicon oxide by using a boron or nitrogen-containing graphene oxide ethanol solution, wherein the rotating speed of a spin coater for spin coating of graphene oxide is 300-6000 rpm;
c, placing the spin-coated wafer into an atmosphere furnace, heating to 200-500 ℃, keeping the temperature for 5-60 minutes, and keeping the atmosphere at hydrogen, argon, nitrogen and the like;
d, photoetching the wafer to prepare a graphite field effect transistor, taking boron or nitrogen doped graphite on the surface of the silicon wafer as a channel, gold as a source and drain electrode, a back gate as a heavily doped P-type silicon wafer, and an insulating layer as SiO 2 Then, the test was performed using a semiconductor parameter tester (keithley 4200A SCS).
Example 1
Preparing boron-containing graphene oxide (with the boron content of 0.5%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 1mg/ml, the rotating speed of the spin coater is 600rpm, and the thickness of the silicon dioxide is 200nm. And heating the silicon wafer containing the graphene oxide coating to 400 ℃ in an atmosphere tube furnace, and keeping the temperature for 60 minutes to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the P-type semiconductor graphite wafer is 850-1200cm 2 /V·s。
Preparing nitrogen-containing graphene oxide (nitrogen content is 1%) into ethanol solution, and coating the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coaterAnd (3) rotating the homogenizing machine until the ethanol is completely volatilized, wherein the concentration of the graphene oxide is 1mg/ml, the rotating speed of the homogenizing machine is 600rpm, and the thickness of the silicon dioxide is 200nm. And heating the silicon wafer containing the graphene oxide coating to 400 ℃ in an atmosphere tube furnace, and keeping the temperature for 60 minutes to obtain the semiconductor graphite wafer. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 1900-2300cm 2 /V·s。
Example 2
Preparing boron-containing graphene oxide (with the boron content of 0.1%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.05 mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of silicon dioxide is 30nm. And heating the silicon wafer containing the graphene oxide coating to 200 ℃ in an atmosphere tube furnace, and keeping the temperature for 5min to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to prepare a semiconductor graphite field effect transistor by photoetching, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the P-type semiconductor graphite wafer is 120-230cm 2 /V·s。
Preparing nitrogen-containing graphene oxide (with nitrogen content of 0.2%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.05 mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of silicon dioxide is 30nm. And heating the silicon wafer containing the graphene oxide coating to 200 ℃ in an atmosphere tube furnace, and keeping the temperature for 5min to obtain the semiconductor graphite wafer. The semiconductor graphite field effect transistor is prepared by photoetching the nitrogen-containing graphite wafer coating as a channel material by using a semiconductor parameterAnd testing the graphite field effect transistor by using a plurality of testers, wherein the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 560-670cm 2 /V·s。
Example 3
Preparing boron-containing graphene oxide (with the boron content of 2%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until the ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.5 mg/ml, the rotating speed of the spin coater is 2000rpm, and the thickness of the silicon dioxide is 300nm. And heating the silicon wafer containing the graphene oxide coating to 450 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of graphite field effect transistor prepared from P-type semiconductor graphite wafer is 2800-3100cm 2 /V·s。
Preparing nitrogen-containing graphene oxide (with nitrogen content of 3%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.5 mg/ml, the rotating speed of the spin coater is 2000rpm, and the thickness of silicon dioxide is 300nm. And heating the silicon wafer containing the graphene oxide coating to 450 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 3500-4100cm 2 /V·s。
Example 4
Preparing boron-containing graphene oxide (boron content is 1.5%) into ethanol solution, and then utilizing a spin coaterCoating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer, and rotating a spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 5 mg/ml, the rotating speed of the spin coater is 6000rpm, and the thickness of the silicon dioxide is 300nm. And heating the silicon wafer containing the graphene oxide coating to 400 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor made of the P-type semiconductor graphite wafer is 1620-1850cm 2 /V·s。
Preparing nitrogen-containing graphene oxide (with nitrogen content of 2%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 5 mg/ml, the rotating speed of the spin coater is 6000rpm, and the thickness of silicon dioxide is 300nm. And heating the silicon wafer containing the graphene oxide coating to 400 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 2510-2620cm 2 /V·s。
Example 5
Preparing boron-containing graphene oxide (boron content is 1%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 10mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of the silicon dioxide is 500nm. And heating the silicon wafer containing the graphene oxide coating to 500 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. Coating of boron-containing graphite wafers as channel materialAnd photoetching to prepare a semiconductor graphite field effect transistor, and testing the graphite field effect transistor by using a semiconductor parameter tester, wherein the boron-doped graphite material obtained by the method is P-type semiconductor graphite. The boron-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the P-type semiconductor graphite wafer is 1230-1450cm 2 /V·s。
Preparing nitrogen-containing graphene oxide (with nitrogen content of 1.5%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 10mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of silicon dioxide is 500nm. And heating the silicon wafer containing the graphene oxide coating to 500 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is N-type semiconductor graphite. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 3550-3920cm 2 /V·s。
Example 6
Preparing boron-containing graphene oxide (with the boron content of 0.3%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 1mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of the silicon dioxide is 300nm. Heating the silicon wafer containing the graphene oxide coating to 300 ℃ in an atmosphere tube furnace and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the P-type semiconductor graphite wafer is 1630-1970cm 2 /V·s。
Preparing nitrogen-containing graphene oxide (with nitrogen content of 2%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 1mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of silicon dioxide is 300nm. And heating the silicon wafer containing the graphene oxide coating to 300 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 3120-3510cm 2 /V·s。
Example 7
Preparing boron-containing graphene oxide (with boron content of 2%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 1mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of silicon dioxide is 200nm. And heating the silicon wafer containing the graphene oxide coating to 450 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to prepare a semiconductor graphite field effect transistor through photoetching, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the P-type semiconductor graphite wafer is 4850-5200cm 2 /V·s。
Containing nitrogen and oxygenPreparing graphene (nitrogen content is 3%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 1mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of silicon dioxide is 200nm. And heating the silicon wafer containing the graphene oxide coating to 450 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 8920-9520cm 2 between/V.s.
Example 8
Preparing boron-containing graphene oxide (with boron content of 1%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until the ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.5 mg/ml, the rotating speed of the spin coater is 300rpm, and the thickness of the silicon dioxide is 200nm. And heating the silicon wafer containing the graphene oxide coating to 350 ℃ in an atmosphere tube furnace, and keeping the temperature for 20 minutes to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor made of the P-type semiconductor graphite wafer is 1360-1720cm 2 between/V.s.
Preparing nitrogen-containing graphene oxide (with nitrogen content of 2%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.5 mg/ml, the rotating speed of the spin coater is 300rpm, and the thickness of silicon dioxide is 200nm. Heating the silicon wafer containing the graphene oxide coating to 350 ℃ in an atmosphere tube furnace and keeping the temperature for 20 minutes to obtain the silicon waferTo semiconductor graphite wafers. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 3120-3570cm 2 between/V.s.
Example 9
Preparing boron-containing graphene oxide (the boron content is 1.5%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.5 mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of the silicon dioxide is 200nm. And heating the silicon wafer containing the graphene oxide coating to 400 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The boron-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the boron-doped graphite material obtained by the method is a P-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the P-type semiconductor graphite wafer is 2730-2970cm 2 /V·s。
Preparing nitrogen-containing graphene oxide (with the nitrogen content of 2.5%) into an ethanol solution, coating graphene oxide on the surface of a silicon wafer containing a silicon dioxide insulating layer by using a spin coater, and rotating the spin coater until the ethanol is completely volatilized, wherein the concentration of the graphene oxide is 0.5 mg/ml, the rotating speed of the spin coater is 3000rpm, and the thickness of the silicon dioxide is 200nm. And heating the silicon wafer containing the graphene oxide coating to 400 ℃ in an atmosphere tube furnace, and keeping the temperature for 30 minutes to obtain the semiconductor graphite wafer. The nitrogen-containing graphite wafer coating is used as a channel material to carry out photoetching to prepare a semiconductor graphite field effect transistor, a semiconductor parameter tester is used for testing the graphite field effect transistor, and the nitrogen-doped graphite material obtained by the method is an N-type semiconductor graphite wafer. The carrier mobility of the graphite field effect transistor prepared from the N-type semiconductor graphite wafer is 5380-5720cm 2 between/V.s.
The above embodiments are merely provided to further illustrate the method for preparing a semiconductor graphite wafer and the application thereof, but the present invention is not limited to the embodiments, and any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention fall within the scope of the technical solution of the present invention.
Claims (6)
1. A method for preparing a semiconductor graphite wafer is characterized by comprising the following steps: preparing boron-containing graphene oxide into an ethanol solution with the concentration of 0.05-10mg/ml, spin-coating the solution on the surface of a silicon wafer containing silicon oxide by a spin coater at the rotating speed of 300-6000rpm, drying the silicon wafer, placing the silicon wafer into an atmosphere furnace, and carrying out constant-temperature heat treatment at the temperature of 200-350 ℃ for 5-60 minutes to obtain a P-type semiconductor graphite wafer; the boron content of the boron-containing graphene oxide is 0.05-10%; the silicon wafer containing silicon oxide comprises a silicon substrate and a silicon dioxide insulating layer, wherein the thickness of the silicon dioxide insulating layer is 30-500nm.
2. The method of claim 1, wherein: the concentration of the boron-containing graphene oxide in the ethanol solution is 0.5-2mg/ml.
3. The method of claim 1, wherein: the rotating speed of the spin coater is 3000-6000 rpm.
4. The method of claim 1, wherein: the constant temperature time of the heat treatment is 10-30 minutes.
5. The method of claim 1, wherein: the atmosphere of the atmosphere furnace is one of hydrogen, argon and nitrogen.
6. Use of a semiconductor graphite wafer produced by the method of any one of claims 1 to 5 in a field effect tube.
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| CN201911159264.0A CN111081532B (en) | 2019-11-22 | 2019-11-22 | Method for preparing semiconductor graphite wafer and application thereof |
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| CN111081532B true CN111081532B (en) | 2023-03-07 |
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| CN104959134A (en) * | 2015-06-30 | 2015-10-07 | 华南理工大学 | Heteroatom-doped porous graphite electro-catalyst and preparation and application thereof as well as device |
| CN104973596A (en) * | 2015-06-30 | 2015-10-14 | 华南理工大学 | Hetero atom-doped hollow spherical grapheme composite material, and preparation method and applications thereof |
| CN110155991A (en) * | 2019-04-24 | 2019-08-23 | 华东师范大学 | A kind of preparation method of redox graphene and nitrogen-doped graphene |
| CN110364434A (en) * | 2019-07-19 | 2019-10-22 | 德淮半导体有限公司 | The manufacturing method of method for annealing and semiconductor devices |
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