CN111081451A - Glass integrated inductor and preparation method thereof - Google Patents
Glass integrated inductor and preparation method thereof Download PDFInfo
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- CN111081451A CN111081451A CN201911178846.3A CN201911178846A CN111081451A CN 111081451 A CN111081451 A CN 111081451A CN 201911178846 A CN201911178846 A CN 201911178846A CN 111081451 A CN111081451 A CN 111081451A
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- inductor
- glass substrate
- etching
- glass
- hole
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- 239000011521 glass Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 10
- 239000006089 photosensitive glass Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/02—Fixed inductances of the signal type without magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F37/00—Fixed inductances not covered by group H01F17/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
Abstract
A glass integrated inductor and a preparation method thereof relate to the technology of electronic devices. The glass integrated inductor comprises a glass substrate and an inductor, wherein the inductor is formed by a spiral metal curved plate embedded in the glass substrate, and the axial direction of the spiral metal curved plate is vertical to the surface of the glass substrate. The hole depth-diameter ratio of the invention can reach more than 20:1, and the invention has high precision and high efficiency.
Description
Technical Field
The present invention relates to electronic device technology.
Background
With the rapid development of modern IC technology and computer technology, miniaturization, high reliability, and multi-functional integration of communication systems have become a mainstream trend. However, in the past, discrete components such as inductors, capacitors, and filters occupy a large space and consume a large amount of power, which seriously hinders the development of miniaturization and portability of communication systems.
The integrated passive inductor is one of the most basic and commonly used devices in a microwave radio frequency circuit, and is also a key device for forming circuit modules such as a converter, a low noise amplifier, a matching network and the like. In order to meet the development demand of miniaturization and portability of communication systems, it is becoming a trend to integrate inductors inside substrates. The conventional integrated passive inductor technology is realized by a silicon process, but silicon materials belong to semiconductor materials, but the frequency of communication signals is higher and higher nowadays, and the high loss factor of the silicon materials seriously influences the performance of the inductor, so that the Q value of the inductor is lower (between 20 and 30), and the silicon-based integrated passive inductor cannot meet the high performance requirement of a radio frequency integrated circuit.
Disclosure of Invention
The invention aims to solve the technical problem of providing an integrated inductor which has smaller parasitic parameters and meets the performance requirements of high Q value and miniaturization and a preparation method thereof.
The technical scheme adopted by the invention for solving the technical problems is that the glass integrated inductor comprises a glass substrate and an inductor, wherein the inductor is formed by a spiral metal curved plate embedded in the glass substrate, and the axial direction of the spiral metal curved plate is vertical to the surface of the glass substrate, namely the direction of a central magnetic field of the inductor is vertical to the surface of the glass substrate.
The preparation method of the glass integrated inductor comprises the following steps:
1) exposing the photosensitive glass substrate to ultraviolet rays under the shielding of a graphical mask, wherein the mask graph is a preset inductance section graph;
2) annealing the exposed glass substrate to crystallize the exposed area;
3) etching the glass substrate after the heat treatment to form an etching hole, wherein the etching hole is a blind hole or a through hole;
4) filling the etching holes with metal to form an inductor, and removing redundant metal;
5) covering a protective layer at the leading-out point of the inductor, and then arranging a passivation layer on the surface of the glass substrate where the opening of the etching hole is located, wherein the passivation layer at least covers the metal part of the inductor except the protective layer;
6) and removing the protective layer, and arranging an extraction electrode at the extraction point.
And in the step 3), etching by adopting a hydrofluoric acid solution. The etching holes are through holes, and in the step 5), passivation layers are arranged on the upper surface and the lower surface of the substrate.
In the integrated inductor structure, the photosensitive glass substrate adopts a glass through hole (TGV) technology to realize the manufacture of inductor patterns, and has the advantages of high precision, small hole wall inclination angle and the like. Compared with the TSV (through silicon Via) technology, the glass is an insulating material, an insulating layer does not need to be manufactured between the inductor and the substrate, and electromigration and eddy current phenomena do not exist in the substrate, so that the Q value of the inductor is improved. Inside whole inductance was buried glass substrate, both sides all had the passivation layer as the protection, had guaranteed the reliability and the stability of this passive integrated inductance. In addition, the frequencies of the maximum Q values corresponding to different inductor line widths and line intervals are different and have larger bandwidth, so that the radio frequency circuit under different application frequencies can be met. Therefore, the invention is an ideal passive integrated inductor structure under high-frequency signals.
The invention has the following advantages:
the process aspect is as follows:
1. compared with a silicon substrate, the photosensitive glass is used as the substrate, an insulating layer does not need to be manufactured, the process is simple, and the cost is low.
2. Compared with other TGV technologies, the photosensitive glass TGV technology adopts wet etching, the hole depth-diameter ratio can reach more than 20:1, and the method is high in precision and efficiency.
Performance aspects:
1. the silicon substrate belongs to a semiconductor material, electromigration and eddy current phenomena are easy to occur basically under high-frequency signals, and the loss factor of the silicon substrate is high, so that the Q value of the inductor based on the silicon substrate is not high (20-30). However, the photosensitive glass is an insulating material, has small parasitic parameters and small self loss, can improve the Q value of the inductor to between 90 and 100, and has larger bandwidth.
2. The three-dimensional inductor structure is beneficial to reducing the inductance value, and the inductance value is stable along with the frequency change within 1-10 GHz.
3. The photosensitive glass has excellent micro-structure processing performance and completely meets the requirement of element miniaturization. The invention can achieve a thickness of well over 50 microns (the limit thickness of silicon is 50 microns) using glass materials. The invention has the advantages of simplified process, low cost and high efficiency.
Drawings
Fig. 1 is a schematic diagram of an integrated inductor structure according to the present invention.
FIG. 2 is a schematic diagram of the preparation steps of the present invention.
FIG. 3 is a graph of simulated inductance values corresponding to different line spacings (10um,20un,30um) at 1-10GHz and 60um line width.
Fig. 4 is a graph showing the simulated inductance Q values corresponding to different line spacings (10um,20un,30um) at 1-10GHz and 60um line width.
Detailed Description
Referring to fig. 1, the glass integrated inductor of the present invention is composed of a curved metal inductor 2 embedded in a glass substrate 1, and electrodes 3 are provided on the innermost and outermost layers of the inductor. The inductor is composed of a spiral metal curved plate embedded in a glass substrate, and the axis direction of the spiral metal curved plate is perpendicular to the surface of the glass substrate. The metal curved plate is spirally wound around an axis to form the inductor, the axis is the axis of the spiral metal curved plate, and the direction of the axis is consistent with the direction of a central magnetic field of the inductor.
The direction of the central magnetic field of the curved metal inductor is perpendicular to the surface of the glass substrate. The inductor has a coil (the curved metal of the present invention constitutes the coil) which generates a magnetic field in an operating state, and the direction of magnetic lines inside the coil (the center of the coil) is referred to as the central magnetic field direction in the present invention.
Example 1
As shown in fig. 1, the curved metal inductor of the present embodiment is a spirally involute metal structure, and each region of the metal structure is orthogonally disposed. The insulating medium between each layer of the spiral involute inductor is the material of the glass substrate, and the vertical surface of the inductor is vertical to the surface of the glass substrate.
The cross-sectional profile of the inductor shown in the shaded area of fig. 1 is a straight orthogonal structure, but a curved spiral structure may be used.
The invention also provides a preparation method of the glass integrated inductor, which comprises the following steps:
1) exposing the photosensitive glass substrate to ultraviolet rays under the shielding of a graphical mask, wherein the mask graph is a preset inductance section graph;
2) annealing the exposed glass substrate to crystallize the exposed area;
3) etching the glass substrate after the heat treatment to form an etching hole, wherein the etching hole is a blind hole or a through hole;
4) filling the etching holes with metal to form an inductor, and removing redundant metal;
5) covering a protective layer at the leading-out point of the inductor, and then arranging a passivation layer on the surface of the glass substrate where the opening of the etching hole is located, wherein the passivation layer at least covers the metal part of the inductor except the protective layer;
6) and removing the protective layer, and arranging an extraction electrode at the extraction point.
Example 2: see fig. 2.
This example is an example of a method of preparation comprising:
the method comprises the following steps: as shown in fig. 2a, a photosensitive glass substrate is adhered below a mask having a pre-designed inductance pattern, and exposed to ultraviolet light (shown by an arrow in fig. 2 a) with a specific wavelength for about 15 min.
Step two: as shown in fig. 2b, the exposed glass is subjected to annealing heat treatment at a specific temperature to crystallize the exposed region, thereby exhibiting a designed inductor shape and simultaneously relieving the thermal stress of the glass substrate.
Step three: as shown in fig. 2c, the photosensitive glass substrate after heat treatment is placed in a hydrofluoric acid etching solution for selective etching (the etching rate ratio of the crystalline phase to the glass matrix is 30:1), and the required precision of the through hole can be obtained by controlling the concentration, the temperature and the etching time of the etching solution.
Step four: as shown in fig. 2d, the glass etched in the previous step is subjected to the preparation of a channel metal seed layer, and then copper is filled in the inductor pattern channel in an electroplating manner.
Step five: after the channel is filled with electroplated copper, the redundant copper film on the surface needs to be removed through polishing treatment.
Step six: as shown in fig. 2e, the innermost circle and the outermost circle of the inductor are covered with a polymer with the same width as the line width in advance, and then the passivation layers are respectively plated on the two surfaces of the glass through magnetron sputtering.
Step six: as shown in fig. 2f, the polymer is removed and the copper is electroplated again to form bumps for bonding with other devices.
FIG. 3 shows the simulated inductance values corresponding to different line spacings (10um,20um,30um) at 1-10GHz and 60um line width. As can be seen from the figure, under 1-10GHz, 60um line width and 20um line spacing, the range of inductance value is about 0.22nH-0.26nH, and the inductance value is stable and has the advantage of small value. Fig. 4 shows the simulated inductance Q values corresponding to different line pitches (10um,20un,30um) under the line widths of 1-10GHz and 60 um. As can be seen from the figure, the Q value of the inductance value is as high as 96.7259 at about 5.6GHz with 60um line width and 20um line spacing, while the Q value of the inductance using silicon material as the substrate is about 20-30. The integrated inductor has the advantage of high Q value due to the low loss characteristic of the glass substrate.
Claims (4)
1. The glass integrated inductor is characterized by comprising a glass substrate and an inductor, wherein the inductor is formed by a spiral metal curved plate embedded into the glass substrate, and the axis direction of the spiral metal curved plate is perpendicular to the surface of the glass substrate.
2. The preparation method of the glass integrated inductor is characterized by comprising the following steps of:
1) exposing the photosensitive glass substrate to ultraviolet rays under the shielding of a graphical mask, wherein the mask graph is a preset inductance section graph;
2) annealing the exposed glass substrate to crystallize the exposed area;
3) etching the glass substrate after the heat treatment to form an etching hole, wherein the etching hole is a blind hole or a through hole;
4) filling the etching holes with metal to form an inductor, and removing redundant metal;
5) covering a protective layer at the leading-out point of the inductor, and then arranging a passivation layer on the surface of the glass substrate where the opening of the etching hole is located, wherein the passivation layer at least covers the metal part of the inductor except the protective layer;
6) and removing the protective layer, and arranging an extraction electrode at the extraction point.
3. The method for preparing a glass integrated inductor according to claim 2, wherein in the step 3), etching is performed by using a hydrofluoric acid solution.
4. The method according to claim 2, wherein the etching holes are through holes, and in step 5), passivation layers are disposed on both the upper and lower surfaces of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911178846.3A CN111081451A (en) | 2019-11-27 | 2019-11-27 | Glass integrated inductor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911178846.3A CN111081451A (en) | 2019-11-27 | 2019-11-27 | Glass integrated inductor and preparation method thereof |
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| Publication Number | Publication Date |
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| CN111081451A true CN111081451A (en) | 2020-04-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911178846.3A Pending CN111081451A (en) | 2019-11-27 | 2019-11-27 | Glass integrated inductor and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086282A (en) * | 2020-07-27 | 2020-12-15 | 电子科技大学 | Manufacturing method and structure of miniaturized three-dimensional inductor with magnetic core |
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2019
- 2019-11-27 CN CN201911178846.3A patent/CN111081451A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086282A (en) * | 2020-07-27 | 2020-12-15 | 电子科技大学 | Manufacturing method and structure of miniaturized three-dimensional inductor with magnetic core |
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