CN111074236A - Chemical vapor deposition device - Google Patents

Chemical vapor deposition device Download PDF

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Publication number
CN111074236A
CN111074236A CN201911387648.8A CN201911387648A CN111074236A CN 111074236 A CN111074236 A CN 111074236A CN 201911387648 A CN201911387648 A CN 201911387648A CN 111074236 A CN111074236 A CN 111074236A
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CN
China
Prior art keywords
shielding
reaction chamber
plate
vapor deposition
chemical vapor
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Pending
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CN201911387648.8A
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Chinese (zh)
Inventor
肖守均
林子平
李刘中
张雪
安金鑫
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Priority to CN201911387648.8A priority Critical patent/CN111074236A/en
Publication of CN111074236A publication Critical patent/CN111074236A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a chemical vapor deposition device, which comprises a reaction chamber, wherein a shielding component is arranged in the reaction chamber, and the shielding component is connected with the inner wall of the reaction chamber along the circumferential direction; at least one corner of the shielding assembly is provided with a notch, an airflow channel is formed between the notch and the inner wall of the reaction chamber, the shielding assembly except the notch is hermetically connected with the inner wall of the reaction chamber, so that the connecting part of the shielding assembly and the inner wall of the reaction chamber plays a role in guiding airflow and guiding the airflow to the airflow channel, the airflow channel covers the corners of the shielding assembly and the reaction chamber, and sufficient etching gas flows through the corners of the shielding assembly and the reaction chamber, so that the corners of the shielding assembly and the reaction chamber are sufficiently cleaned, and the residual particle source of the corners of the shielding assembly and the reaction chamber is avoided.

Description

Chemical vapor deposition device
Technical Field
The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a chemical vapor deposition device.
Background
In order to clean the inner wall of the reaction chamber and the deposits in other areas, in the prior art, etching gas is filled into the reaction chamber and exhausted, and the etching gas reacts with the deposits while flowing in the reaction chamber, so that the deposits are removed from the reaction chamber.
However, the etching gas passing amount at the corners of the shielding assembly is small, so that the retention time of the cleaning gas at the four corners of the shielding assembly is short, and the concentration of the cleaning gas is low, thereby causing the residual films at the four corners of the shielding assembly to be gathered. Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The present invention provides a chemical vapor deposition apparatus, which aims to solve the above-mentioned problems in the prior art, and aims to solve the problem that the deposits at the corners of the shielding assembly are not easy to be removed.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a chemical vapor deposition device comprises a reaction chamber, wherein a shielding component is arranged in the reaction chamber and is connected with the inner wall of the reaction chamber along the circumferential direction; at least one corner of the shielding component is provided with a notch, and an airflow channel is formed between the notch and the inner wall of the reaction chamber.
The chemical vapor deposition device is characterized in that notches are arranged at four corners of the shielding assembly to form four airflow channels.
The chemical vapor deposition device is characterized in that the shielding assembly comprises a base, a shielding plate arranged above the base and four guide plates; the shielding plate is a quadrilateral square frame, and the four guide plates are used for respectively connecting four side edges of the shielding plate with the inner wall of the reaction chamber; two adjacent guide plates are arranged at intervals to form gaps.
The length of the guide plate connected with the long edge of the shielding plate is smaller than that of the long edge of the shielding plate; the length of the guide plate connected to the short side of the shield plate is smaller than the length of the short side of the shield plate.
The chemical vapor deposition device is characterized in that the center of a guide plate connected with the long edge of the shielding plate corresponds to the center of the long edge of the shielding plate; the center of the guide plate connected with the short edge of the shielding plate corresponds to the center of the short edge of the shielding plate to form an L-shaped notch.
The chemical vapor deposition device is characterized in that the length of a guide plate connected with the long edge of the shielding plate is greater than 1/2 of the length of the long edge of the shielding plate; the length of the guide plate connected to the short side of the shield plate is greater than 1/2 of the length of the short side of the shield plate.
The chemical vapor deposition device is characterized in that the guide plate is detachably connected with the shielding plate.
The chemical vapor deposition device is characterized in that the guide plate is positioned below the shielding plate and is partially overlapped with the shielding plate.
The chemical vapor deposition device is characterized in that the reaction chamber is provided with an air inlet, the air inlet is positioned above the shielding component, and the central axis of the air inlet is vertical to the shielding component.
The chemical vapor deposition device is provided with a reaction chamber, wherein the reaction chamber is provided with an exhaust hole which is positioned below the shielding component; the distance between the shielding component and the exhaust hole is larger than that between the shielding component and the exhaust hole.
Has the advantages that: in the invention, except the notch part, other parts of the shielding assembly are hermetically connected with the inner wall of the reaction chamber, so that the part of the shielding assembly connected with the inner wall of the reaction chamber plays a role in guiding airflow and guiding the airflow to the airflow channel, the airflow channel covers the shielding assembly and the corners of the reaction chamber, and sufficient etching gas flows through the corners of the shielding assembly and the reaction chamber, so that the corners of the shielding assembly and the reaction chamber are sufficiently cleaned, and residual particle sources of the shielding assembly and the corners of the reaction chamber are avoided.
Drawings
FIG. 1 is a first view of a chemical vapor deposition apparatus according to the present invention;
FIG. 2 is a second view of the chemical vapor deposition apparatus of the present invention;
FIG. 3 is a diagram showing the effect of white glass after being washed in a chemical vapor deposition device of a prior structure;
FIG. 4 is a diagram illustrating the effect of white glass after being washed in the chemical vapor deposition apparatus according to the present invention;
fig. 5 is a comparison graph of the duration of glow discharge when the chemical vapor deposition apparatus of the prior art and the chemical vapor deposition apparatus of the present invention respectively clean the gate insulating layer and the passivation layer having the same residual film thickness.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides a chemical vapor deposition device, as shown in fig. 1 and 2, comprising a reaction chamber 1, wherein a shielding component 2 is arranged in the reaction chamber 1, and four walls of the shielding component 2 along the circumferential direction are connected with the inner wall of the reaction chamber 1, so that the shielding component 2 is sealed with the inner wall of the reaction chamber 1; at least one corner of the shielding component 2 is provided with a notch 3, and an airflow channel is formed between the notch 3 and the inner wall of the reaction chamber 1. When etching gas is introduced into the reaction chamber 1 to flush the shielding assembly 2, gas flow formed by the etching gas flows to the shielding assembly 2 and gradually diffuses towards the circumferential direction of the shielding assembly 2; the part of the shielding component 2 hermetically connected with the inner wall of the reaction chamber 1 can guide the gas flow, so that the gas flow moves towards the position of the gap 3 along the connection part between the shielding component 2 and the inner wall of the reaction chamber 1, passes through the gas flow channel, and flows and is discharged to the exhaust port of the reaction chamber 1.
In the invention, except the notch 3, other parts of the shielding component 2 are hermetically connected with the inner wall of the reaction chamber 1, so that the part where the shielding component 2 is connected with the inner wall of the reaction chamber 1 plays a role in guiding airflow, the airflow is guided to an airflow channel, the airflow channel covers the corners of the shielding component 2 and the reaction chamber 1, and sufficient etching gas flows through the corners of the shielding component 2 and the reaction chamber 1, so that the corners of the shielding component 2 and the reaction chamber 1 are sufficiently cleaned, and thus residual particle sources of the corners of the shielding component 2 and the reaction chamber 1 are avoided.
In the invention, except the position of the gap 3, other parts of the shielding component 2 are connected and sealed with the inner wall of the reaction chamber 1, so that only the gap 3 forms an airflow channel; compared with the prior art, the invention reduces the number of gas flow channels, thereby prolonging the residence time of etching gas in the reaction chamber 1 and more fully cleaning the reaction chamber 1 and the shielding component 2.
Furthermore, the notch 3 corresponds to the corner of the reaction chamber 1, and when the etching gas flows to the notch 3, the corner of the reaction chamber 1 corresponding to the notch 3 can be cleaned at the same time, so that the residual particle source at the corner of the reaction chamber 1 is avoided.
In a specific embodiment, the shielding assembly 2 is provided with notches 3 at four corners, that is, the shielding assembly 2 is provided with four notches 3, so as to form four air flow channels. When the reaction chamber 1 is filled with etching gas, when the gas flow formed by the etching gas flows to the shielding assembly 2, the gas flow is diffused to the periphery of the shielding assembly 2, and part of the gas flow flows to the four gas flow channels along the connection position between the shielding assembly 2 and the inner wall of the reaction chamber 1, flows to the exhaust port of the reaction chamber 1 through the four gas flow channels, and is exhausted from the exhaust port of the reaction chamber 1. In the invention, the four airflow channels respectively cover four corners of the shielding component 2, so that etching gas flows through the four corners of the reaction chamber 1 corresponding to the four notches 3 and the four corners of the shielding component 2 sufficiently, and the cleaning degree of the etching gas for flushing the four corners of the shielding component 2 and the four corners of the reaction chamber 1 is improved.
The shielding assembly 2 comprises a base 20, a shielding plate 21 arranged above the base 20, and four guide plates 22; the shielding plate 21 is a quadrangular frame, that is, the shielding plate 21 has a hollow part 210; the susceptor 20 shields the hollow portion 210 of the shielding plate 21 from below the shielding plate 21, so that the airflow entering from the air inlet of the reaction chamber 1 reaches the shielding assembly 2, and then is blocked by the susceptor 20 and the shielding plate 21, thereby flowing toward the four guide plates 22. Gaps are reserved between four sides of the shielding plate 21 and the inner wall of the reaction chamber 1; the four guide plates 22 are respectively arranged on four side edges of the shielding plate 21 and shield the gap; the side of the guiding plate 22 away from the shielding plate 21 is connected to the inner wall of the reaction chamber 1. Every two adjacent guide plates 22 are arranged at intervals to form the gap 3.
The cross section of the guide plate 22 is rectangular; the two guide plates connected with the long side of the shielding plate 21 are respectively a first guide plate 221 and a second guide plate 222, and the two guide plates connected with the short side of the shielding plate 21 are respectively a third guide plate 223 and a fourth guide plate 224; the first guide plate 221, the third guide plate 223, the second guide plate 222, and the fourth guide plate 224 are sequentially distributed around the shielding plate 21. The first guide plate 221 and the second guide plate 222 are symmetrical to each other, and the third guide plate 223 and the fourth guide plate 224 are symmetrical to each other.
The length direction of the first guide plate 221 and the length direction of the long side of the shielding plate 21 are parallel to each other, so that the length of the overlap between the first guide plate 221 and the long side of the shielding plate 21 is as long as possible, and the airflow is better guided to two airflow channels close to the first guide plate 221; the length direction of the third guide plate 223 is parallel to the length direction of the short side of the shielding plate 21, so that the overlapping length between the third guide plate 223 and the short side of the shielding plate 21 is as long as possible, and the airflow is better guided to two airflow channels close to the third guide plate 223.
The length of the guide plate 22 connected to the long side of the shielding plate 21 is smaller than the length of the long side of the shielding plate 21, that is, the length of each of the first guide plate 221 and the second guide plate 222 is smaller than the length of the long side of the shielding plate 21; the length of the guide plate 22 connected to the short side of the shielding plate 21 is shorter than the length of the short side of the shielding plate 21, that is, the length of each of the third guide plate 223 and the fourth guide plate 224 is shorter than the length of the short side of the shielding plate 21.
Further, the center of the guide plate 22 connected to the long side of the shielding plate 21 corresponds to the center of the long side of the shielding plate 21; the center of the guide plate 22 connected to the short side of the shielding plate 21 corresponds to the center of the short side of the shielding plate 21; that is, the center of the first guide plate 221 corresponds to the center of the long side of the corresponding shielding plate 21, and the center of the third guide plate 223 corresponds to the center of the short side of the corresponding shielding plate 21, so that an L-shaped notch 3 is formed between the first guide plate 221 and the third guide plate 223. The L-shaped notch 3 may cover a part of the long side of the shielding plate 21 or a part of the short side of the shielding plate 21, so that the corners of the shielding plate 21 may be more sufficiently cleaned when the etching gas is introduced into the reaction chamber 1.
In an embodiment, the length of the guide plate 22 connected to the long side of the shielding plate 21 is greater than 1/2 of the length of the long side of the shielding plate 21, that is, the lengths of the first guide plate 221 and the second guide plate 222 are both greater than 1/2 of the length of the long side of the shielding plate 21 and less than the length of the long side of the shielding plate 21. The length of the guide plate 22 connected to the short side of the shielding plate 21 is greater than 1/2 of the length of the short side of the shielding plate 21, that is, the length of each of the third guide plate 223 and the fourth guide plate 224 is greater than 1/2 of the length of the short side of the shielding plate 21 and less than the length of the short side of the shielding plate 21.
The difference between the length of the long side of the shielding plate 21 and the length of the first guide plate 221 is equal to the difference between the length of the short side of the shielding plate 21 and the length of the third guide plate 223, so that the lengths of the two sides of the L-shaped notch are equal, the range of the area of the L-shaped notch covering the long side of the shielding plate 21 is equal to the range of the area of the L-shaped notch covering the short side of the shielding plate 21, and the cleaning degree of the corners of the shielding plate 21 is improved.
The guide plate 22 is detachably attached to the shielding plate 21, or the guide plate 22 and the shielding plate 21 are not attached but merely contact each other.
In an embodiment, the guide plate 22 is not connected to the shielding plate 21, and the guide plate 22 is located below the shielding plate 21 and partially overlaps the shielding plate 21, so that the guide plate 22 supports the shielding plate 21 from below the shielding plate 21.
Because the guide plate 22 is positioned below the shielding plate 21, a gas flow guide channel is formed by a gap between the shielding plate 21 and the inner wall of the reaction chamber 1; when the reaction chamber 1 is filled with etching gas, the gas flow formed by the etching gas flows to the shielding plate 21 and then diffuses towards the periphery along the shielding plate 21, part of the gas flow enters the gas flow guide channel and flows towards the two ends of the gas flow guide channel in the length direction under the guiding action of the gas flow guide channel until entering the gas flow channel, and the four corners of the shielding plate 21 and the four corners of the reaction chamber 1 are washed.
The base 20 and the shielding plate 21 can be separated from each other, in the present invention, the base 20 can move up and down in the reaction chamber 1, and the driving mechanism and the working principle required for the up and down movement of the base 20 are the same as those of the prior art, which is not described in the present invention. When an epitaxial layer needs to be manufactured on a substrate such as glass, the substrate is placed on the base 20, then the shielding plate 21 is placed downwards, and the base 20 is driven to ascend until the upper side and the lower side of the substrate are respectively supported by the shielding plate 21 and the base 20. When the reaction chamber 1 needs to be cleaned, the shielding plate 21 is put downwards into the reaction chamber 1 until the shielding plate 21 contacts the guide plate 22 so as to support the shielding plate 21 through the guide plate 22; then, the base 20 is driven to rise until the base 20 contacts the shielding plate 21, and the hollow part 210 of the shielding plate 21 is shielded from below the shielding plate 21.
As shown in fig. 2, the reaction chamber 1 has an air inlet 4, the air inlet 4 is located above the shielding assembly 2, and a central axis of the air inlet 4 is perpendicular to the shielding assembly 2, so that when etching gas is filled into the reaction chamber 1 from the air inlet 4, the etching gas flows vertically downward and diffuses around under the shielding effect of the shielding assembly 2, and thus can enter the airflow channels located at the four corners of the shielding assembly 2 through the guiding effect of the guiding plate 22, and flush the four corners of the shielding assembly 2 and the four corners of the reaction chamber 1.
The reaction chamber 1 is provided with an exhaust hole 5, and the exhaust hole 5 is positioned below the shielding component 2; the distance between the shielding component 2 and the exhaust hole 5 is larger than the distance between the shielding component 2 and the exhaust hole 5, so that the shielding component 2 is far away from the exhaust hole 5, and when etching gas is filled from the air inlet hole 4, the pressure caused by the shielding component 2 is larger, thereby being more beneficial to making a deposition layer on the shielding component 2 clear and avoiding the deposition layer from being left to form a particle source.
As shown in fig. 2, a stopper 6 is disposed on a side of the guide plate 22 away from the inner wall of the reaction chamber 1, and the stoppers 6 are respectively connected to the guide plate 22 and the shielding plate 21, so as to prevent the etching gas from leaking from the assembly gap when the assembly gap exists between the shielding plate 21 and the guide plate 22, and ensure that the etching gas filled from the gas inlet 4 can flow into the four gas flow channels as much as possible.
In a specific experiment, white glass 200 and white glass 201 with the same structure are respectively placed in a conventional chemical vapor deposition device and the chemical vapor deposition device of the invention to be used as a shielding plate 21, silicon nitride 6000A is deposited on the white glass 200 and the white glass 201, nitrogen trifluoride is used as etching gas for etching for 60s, and then the residual film thicknesses of the two pieces of white glass (200 and 201) are respectively tested, wherein two-dimensional graphs of the film thickness distribution of the two structures are shown in fig. 3 and 4: the thickness of the residual films (shaded areas in fig. 3) at the four corners of the white glass 200 in the chemical vapor deposition chamber with the existing structure is 4000-5000A, while the thickness of the residual films (shaded areas in fig. 4) at the four corners of the white glass 201 in the chemical vapor deposition chamber disclosed by the invention is 1000-2000A, compared with the chemical vapor deposition chamber with the traditional structure, the residual film thickness uniformity of the four corners of the white glass 201 in the chemical vapor deposition chamber disclosed by the invention is better, and the residual film at the four corners is less.
In addition, the chemical vapor deposition apparatus generates glow discharge when performing a gas cleaning reaction, and thus the cleaning performance can be reflected by the length of glow discharge time. As shown in fig. 5, a comparison graph of glow discharge durations of a chemical vapor deposition apparatus of a conventional structure and a chemical vapor deposition apparatus of the present invention is shown, wherein a thickness of a residual film in the chemical vapor deposition apparatus of the conventional structure is equal to a thickness of a residual film in the chemical vapor deposition apparatus of the present invention, and a gate insulating layer and a passivation layer are respectively two different residual films. In the chemical vapor deposition device with the existing structure, the time A of glow discharge generated by cleaning a gate insulating layer is 760s, and the time B of glow discharge generated by cleaning a passivation layer is 650 s; in the chemical vapor deposition device, the time A1 of glow discharge generated by cleaning the gate insulating layer is 540s, and the time B1 of glow discharge generated by cleaning the passivation layer is 520 s. Compared with the chemical vapor deposition device with the existing structure, the cleaning completion time of the chemical vapor deposition device with the same film thickness can be obviously reduced by 100-250 s, and the cleaning efficiency is obviously improved.
In summary, the chemical vapor deposition apparatus of the present invention includes a reaction chamber, wherein a shielding component is disposed in the reaction chamber, and the shielding component is connected to an inner wall of the reaction chamber along a circumferential direction; at least one corner of the shielding assembly is provided with a notch, an airflow channel is formed between the notch and the inner wall of the reaction chamber, the shielding assembly except the notch is hermetically connected with the inner wall of the reaction chamber, so that the connecting part of the shielding assembly and the inner wall of the reaction chamber plays a role in guiding airflow and guiding the airflow to the airflow channel, the airflow channel covers the corners of the shielding assembly and the reaction chamber, and sufficient etching gas flows through the corners of the shielding assembly and the reaction chamber, so that the corners of the shielding assembly and the reaction chamber are sufficiently cleaned, and the residual particle source of the corners of the shielding assembly and the reaction chamber is avoided.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.

Claims (10)

1. A chemical vapor deposition device comprises a reaction chamber and is characterized in that a shielding component is arranged in the reaction chamber and is connected with the inner wall of the reaction chamber along the circumferential direction; at least one corner of the shielding component is provided with a notch, and an airflow channel is formed between the notch and the inner wall of the reaction chamber.
2. The chemical vapor deposition apparatus of claim 1, wherein the masking element is notched at each of four corners to form four gas flow channels.
3. The chemical vapor deposition apparatus of claim 2, wherein the shield assembly comprises a susceptor, a shield plate disposed above the susceptor, and four guide plates; the shielding plate is a quadrilateral square frame, and the four guide plates are used for respectively connecting four side edges of the shielding plate with the inner wall of the reaction chamber; two adjacent guide plates are arranged at intervals to form gaps.
4. The chemical vapor deposition apparatus according to claim 3, wherein a length of the guide plate connected to the long side of the shielding plate is shorter than a length of the long side of the shielding plate; the length of the guide plate connected to the short side of the shield plate is smaller than the length of the short side of the shield plate.
5. The chemical vapor deposition apparatus according to claim 4, wherein a center of the guide plate connected to the long side of the shielding plate corresponds to a center of the long side of the shielding plate; the center of the guide plate connected with the short edge of the shielding plate corresponds to the center of the short edge of the shielding plate to form an L-shaped notch.
6. The chemical vapor deposition apparatus according to claim 3, wherein a length of the guide plate connected to the long side of the shielding plate is greater than 1/2 of the length of the long side of the shielding plate; the length of the guide plate connected to the short side of the shield plate is greater than 1/2 of the length of the short side of the shield plate.
7. The chemical vapor deposition apparatus of claim 3, wherein the guide plate is detachably coupled to the shielding plate.
8. The chemical vapor deposition apparatus according to claim 3, wherein a guide plate is located below the shielding plate and overlaps with the shielding plate.
9. The chemical vapor deposition apparatus as claimed in any one of claims 1 to 8, wherein the reaction chamber has an air inlet hole, the air inlet hole is positioned above the shield assembly, and a central axis of the air inlet hole is perpendicular to the shield assembly.
10. The chemical vapor deposition apparatus of claim 9, wherein the reaction chamber has an exhaust vent located below the shield assembly; the distance between the shielding component and the exhaust hole is larger than that between the shielding component and the exhaust hole.
CN201911387648.8A 2019-12-27 2019-12-27 Chemical vapor deposition device Pending CN111074236A (en)

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CN115074697A (en) * 2022-06-29 2022-09-20 苏州华星光电技术有限公司 Shielding plate and chemical vapor deposition device

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CN110459457A (en) * 2019-08-19 2019-11-15 德淮半导体有限公司 A kind of application method of vacuum precleaning device and forming method, vacuum precleaning device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115074697A (en) * 2022-06-29 2022-09-20 苏州华星光电技术有限公司 Shielding plate and chemical vapor deposition device
CN115074697B (en) * 2022-06-29 2023-09-26 苏州华星光电技术有限公司 Shielding plate and chemical vapor deposition device

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Application publication date: 20200428