CN111074116A - Electronic packaging high-silicon aluminum-based composite material and preparation method thereof - Google Patents
Electronic packaging high-silicon aluminum-based composite material and preparation method thereof Download PDFInfo
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- CN111074116A CN111074116A CN202010044903.5A CN202010044903A CN111074116A CN 111074116 A CN111074116 A CN 111074116A CN 202010044903 A CN202010044903 A CN 202010044903A CN 111074116 A CN111074116 A CN 111074116A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
- C22C1/1047—Alloys containing non-metals starting from a melt by mixing and casting liquid metal matrix composites
- C22C1/1052—Alloys containing non-metals starting from a melt by mixing and casting liquid metal matrix composites by mixing and casting metal matrix composites with reaction
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0073—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only borides
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
- C22F1/043—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with silicon as the next major constituent
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Abstract
The invention discloses an electronic packaging high-silicon aluminum-based composite material, which comprises the following components in percentage by mass: TiB20.1-5.0% of Si, 15-40% of Mg, 0.25-0.45% of Mg, and the balance of Al. The electronic packaging high-silicon aluminum-based composite material contains TiB2The particles can effectively improve the microstructure of the aluminum-silicon alloy and improve the mechanical property of the aluminum-silicon alloy; furthermore, the surface properties of the aluminum-silicon alloy, such as wear resistance and fatigue resistance, can be effectively improved by adopting a laser surface treatment method. The invention also discloses an electronA preparation method of a packaging high-silicon aluminum-based composite material.
Description
Technical Field
The invention relates to the technical field of aluminum-based composite materials, in particular to an electronic packaging high-silicon aluminum-based composite material and a preparation method thereof.
Background
Electronic packaging materials are of great importance in the integrated circuit industry, and most military products are packaged by using metal and ceramic materials in order to ensure the structural and functional reliability of systems, components, devices and the like. The use of a metal material for encapsulation has many advantages, such as: high air tightness, high strength, good heat dispersion and the like. However, the conventional metal material obviously cannot meet the requirements of aerospace, military radar, ships, electronic warfare and the like on electronic packaging due to various performance defects. The Al-Si alloy combines the excellent performances of Al and Si, has excellent comprehensive performance, can just play a role in the fields, forms large-scale production, and gradually pushes the product to the civil market and expands the application range.
The expansion of electronic packaging application scenes and certain scene conditions are increasingly harsh, and higher requirements are put forward on the mechanical property and the surface property of the electronic packaging material.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide the electronic packaging high-silicon aluminum-based composite material with excellent mechanical property.
In order to achieve the technical effects, the technical scheme of the invention is as follows: the electronic packaging high-silicon aluminum-based composite material is characterized by comprising the following components in percentage by mass: TiB20.1-5.0% of Si 15-40%, 0.25-0.45% of Mg, and the balance of Al. Furthermore, TiB in the electronic packaging high-silicon aluminum-based composite material2Generated via an in situ reaction.
The invention also aims to provide a preparation method of the electronic packaging high-silicon aluminum-based composite material, which is characterized in that the high-silicon aluminum-based composite material contains TiB generated by in-situ reaction2(ii) a The preparation method of the electronic packaging high-silicon aluminum-based composite material comprises the following steps:
s1: mixing powdery Al, Ti and B in proportion, and pressing into a blank;
s2: melting pure aluminum and pure silicon, and adding pure magnesium into the melt to prepare an alloy melt;
s3: heating the alloy melt to 850-900 ℃, preserving heat, and adding the blank obtained in the step S1 into the alloy melt for uniformly mixing;
s4: refining, namely pouring the alloy melt into a preheated die for molding.
The preferred technical scheme is that the quality isThe electronic packaging high-silicon aluminum-based composite material comprises the following components in percentage: TiB20.1-5.0% of Si, 15-40% of Mg, 0.25-0.45% of Mg, and the balance of Al.
The preferable technical scheme is that the temperature for melting the industrial pure aluminum and the pure silicon in the S2 is 800-850 ℃.
The preferable technical scheme is that the mass fraction of the powdery Al in the blank obtained in the S1 is 50-70%; the molar ratio of the powdery Ti to the powdery B in the blank obtained in the step S1 is 1: 2.0 to 2.5.
The preferable technical scheme is that the preheating temperature of the die in the S4 is 200-250 ℃.
The preferable technical proposal is that the method also comprises the solution and aging heat treatment of the formed casting obtained in the S4.
The preferable technical scheme is that the technological parameters of the solution heat treatment are as follows: the temperature is 520-560 ℃, and the time is 10-24 h.
The preferable technical scheme is that the aging heat treatment process parameters are as follows: the temperature is 150-180 ℃, and the time is 4-8 h.
The preferable technical proposal is that the method also comprises the laser surface treatment of the molded piece after the heat treatment; the technological parameters of the laser surface treatment are as follows: the pulse width of the laser is 5-30 ns, the pulse energy is 1-100J, and the repetition frequency is 1 Hz.
The invention has the advantages and beneficial effects that:
the electronic packaging high-silicon aluminum-based composite material contains TiB2The particles can effectively improve the microstructure of the high-aluminum-silicon alloy and improve the mechanical property of the aluminum-silicon alloy; furthermore, the surface performance of the aluminum-silicon alloy, such as wear resistance and fatigue resistance, can be effectively improved by adopting a laser surface treatment method, and the aluminum-silicon alloy is suitable for being used as an electronic packaging material;
the preparation method of the electronic packaging high-silicon aluminum-based composite material takes powdery titanium and boron as raw materials, a blank prepared by adding Al-Ti-B mixed powder into a melt of a high-silicon aluminum alloy, and Ti and B are completely reacted in situ in the melt to generate TiB2The particle has simple and reliable process, is convenient and is easy to popularize.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The detection standard of the electronic packaging high-silicon aluminum-based composite material is as follows:
1. the bending strength national standard (GB/T6569-86);
2. the tensile test and the elongation are according to the national standard GB/T228.1-2010.
Example 1 (0.5 wt.% TiB)2Particle reinforced Al-15Si electronic packaging material)
Embodiment 1 the preparation method of the electronic packaging high silicon aluminum based composite material comprises the following steps:
s1: pressing the powder into a blank according to the mass percent of 60 percent of Al powder and the molar ratio of the Ti powder to the B powder of 1: 2;
s2: putting pure Al into a smelting furnace, heating to 800-850 ℃ for melting, then adding pure Si and pure Mg in sequence according to the proportion, and stirring uniformly after melting;
s3: heating to 850-900 ℃, adding the blank obtained in the step S1 into the alloy melt obtained in the step S2, and stirring for 2-5 min after complete reaction;
s4: adding a refining agent, preserving heat for 10min, removing slag, preserving heat to 750-850 ℃, and pouring into a mold with a preheating temperature of 200-250 ℃;
s5: putting the prepared aluminum-silicon alloy into a resistance box type furnace for solid solution and aging heat treatment, wherein the solid solution temperature is 550 ℃, the time is 16 hours, the aging temperature is 175 ℃, and the time is 4 hours;
s6: and after heat treatment, cutting the sample into a required shape, and then carrying out laser surface treatment, wherein the process parameters are 15ns of laser pulse width, 30J of pulse energy and 1Hz of repetition frequency.
Tested, example 1 produced 0.5wt.% TiB2The bending strength of the particle reinforced Al-15Si electronic packaging material is 260MPa, the tensile strength is 240MPa, and the elongation is 5%.
Example 2 (1.0 wt.% TiB)2Particle reinforced Al-25Si electronic packaging material)
Example 2 is based on example 1 with the difference that:
1. preparing an electronic packaging high-silicon aluminum-based composite material with the same quality as that of the electronic packaging high-silicon aluminum-based composite material prepared in the embodiment 1, wherein the addition amount of the blank is twice of that of the electronic packaging high-silicon aluminum-based composite material prepared in the embodiment 1;
2. example 2 the mass fraction of silicon in the electronic packaging high-silicon aluminum-based composite material is 25%;
tested, 1.0wt.% TiB prepared in example 22The bending strength of the particle reinforced Al-25Si electronic packaging material is 240MPa, the tensile strength is 220MPa, and the elongation is 4%.
Example 3 (1.0 wt.% TiB)2Particle reinforced Al-35Si electronic packaging material)
Example 3 is also based on example 1, with the difference that:
1. preparing an electronic packaging high-silicon aluminum-based composite material with the same quality as that of the electronic packaging high-silicon aluminum-based composite material prepared in the embodiment 1, wherein the addition amount of the blank is twice of that of the electronic packaging high-silicon aluminum-based composite material prepared in the embodiment 1;
2. example 2 the mass fraction of silicon in the electronic packaging high-silicon aluminum-based composite material is 35%;
tested, 1.0wt.% TiB prepared in example 32The bending strength of the particle reinforced Al-35Si electronic packaging material is 215MPa, the tensile strength is 210MPa, and the elongation is 4%.
Comparative example (Al-15 Si electronic packaging Material)
Comparative example is based on example 1 with the difference that the raw materials of the comparative example do not contain powdered Ti and B pressed green bodies, the process for the preparation of an Al-15Si electronic packaging material comprises the following steps:
s1: putting pure Al into a smelting furnace, heating to 800-850 ℃ for melting, then adding pure Si and pure Mg in sequence according to the proportion, and stirring uniformly after melting;
s2: adding a refining agent, preserving heat for 10min, carrying out slag removal, preserving heat to 750-850 ℃, and pouring into a mold with a preheating temperature of 200-250 ℃;
s3: putting the prepared aluminum-silicon alloy into a resistance box type furnace for solid solution and aging heat treatment, wherein the solid solution temperature is 550 ℃, the time is 16 hours, the aging temperature is 175 ℃, and the time is 4 hours;
s4: and after heat treatment, cutting the sample into a required shape, and then carrying out laser surface treatment, wherein the process parameters comprise 15ns of laser pulse width, 30J of pulse energy and 1Hz of repetition frequency.
Through detection, the bending strength of the Al-15Si electronic packaging material prepared by the comparative example is 230MPa, the tensile strength is 200MPa, and the elongation is 4%.
The wear test of the examples and comparative examples was carried out according to GBT12444-2006, and the fatigue test of the examples and comparative examples was carried out according to GBT 3075. The wear resistance and fatigue resistance of the samples of examples 1-3 are improved compared to the comparative examples.
Example 1 and comparative example formation in situ generated TiB2In comparison with comparative example 1, the bending strength, tensile strength and elongation of the sample of example 1 are significantly improved.
Example 2 and example 3 are based on example 1, with the difference that TiB is generated in situ in the electronic packaging high silicon aluminum based composite material2The amount of particles and the mass fraction of silicon. The data show that an increase in silicon content decreases the flexural strength, tensile strength of the samples, and the elongation of the samples of examples 2 and 3 is comparable to the comparative example.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The electronic packaging high-silicon aluminum-based composite material is characterized by comprising the following components in percentage by mass: TiB20.1-5.0% of Si, 15-40% of Mg, 0.25-0.45% of Mg, and the balance of Al.
2. The preparation method of the electronic packaging high-silicon aluminum-based composite material is characterized in that the high-silicon aluminum-based composite material contains TiB generated by in-situ reaction2(ii) a The preparation method of the electronic packaging high-silicon aluminum-based composite material comprises the following steps:
s1: mixing powdery Al, Ti and B in proportion, and pressing into a blank;
s2: melting pure aluminum and pure silicon, and adding pure magnesium into the melt to prepare an alloy melt;
s3: heating the alloy melt to 850-900 ℃, preserving heat, and adding the blank obtained in the step S1 into the alloy melt for uniformly mixing;
s4: refining, namely pouring the alloy melt into a preheated die for molding.
3. The method for preparing the electronic packaging high-silicon aluminum-based composite material according to claim 2, wherein the electronic packaging high-silicon aluminum-based composite material comprises the following components in percentage by mass: TiB20.1-5.0% of Si, 15-40% of Mg, 0.25-0.45% of Mg, and the balance of Al.
4. The method for preparing the electronic packaging high-silicon aluminum-based composite material according to claim 2, wherein the temperature for melting the industrial pure aluminum and the pure silicon in the S2 is 850-900 ℃.
5. The preparation method of the electronic packaging high-silicon aluminum-based composite material according to claim 2, wherein the mass fraction of the powdery Al in the blank obtained in the step S1 is 50-70%; the molar ratio of the powdery Ti to the powdery B in the blank obtained in the step S1 is 1: 2.0 to 2.5.
6. The preparation method of the electronic packaging high-silicon aluminum-based composite material according to claim 2, wherein the preheating temperature of the die in the S4 is 200-250 ℃.
7. The method for preparing the electronic packaging high-silicon aluminum-based composite material according to any one of claims 2 to 6, characterized by further comprising solution and aging heat treatment of the formed casting obtained in S4.
8. The preparation method of the electronic packaging high-silicon aluminum-based composite material according to claim 7, wherein the process parameters of the solution heat treatment are as follows: the temperature is 520-560 ℃, and the time is 10-24 h.
9. The preparation method of the electronic packaging high-silicon aluminum-based composite material according to claim 7, wherein the aging heat treatment comprises the following process parameters: the temperature is 150-180 ℃, and the time is 4-8 h.
10. The method for preparing the electronic packaging high-silicon aluminum-based composite material according to claim 7, further comprising laser surface treatment of the molded part after heat treatment; the technological parameters of the laser surface treatment are as follows: the pulse width of the laser is 5-30 ns, the pulse energy is 1-100J, and the repetition frequency is 1 Hz.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113234969A (en) * | 2021-04-08 | 2021-08-10 | 慈溪市宜美佳铝业有限公司 | Wear-resistant and corrosion-resistant high-silicon aluminum alloy material and preparation method thereof |
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Application publication date: 20200428 |