CN111063662A - Fast recovery diode chip structure - Google Patents
Fast recovery diode chip structure Download PDFInfo
- Publication number
- CN111063662A CN111063662A CN202010077911.XA CN202010077911A CN111063662A CN 111063662 A CN111063662 A CN 111063662A CN 202010077911 A CN202010077911 A CN 202010077911A CN 111063662 A CN111063662 A CN 111063662A
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- Prior art keywords
- sealing cover
- locking
- recovery diode
- pin
- fixedly connected
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000011084 recovery Methods 0.000 title claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 38
- 238000003466 welding Methods 0.000 claims abstract description 9
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a fast recovery diode chip structure, which comprises an upper sealing cover, a lower sealing cover and a chip group, and is characterized in that: the chip set comprises a plurality of chips and welding pieces among the chips, wherein both ends of the upper sealing cover are fixedly connected with first locking blocks, both ends of the lower sealing cover are fixedly connected with second locking blocks, a locking rod is inserted between the first locking blocks and the second locking blocks, one end of the locking rod is fixedly connected with a fixed block, the other end of the locking rod is fixedly connected with a fixed sleeve, one side of the upper sealing cover is inserted with a first pin, and one end of the first pin, which is positioned in the upper sealing cover, is provided with a first connecting piece.
Description
Technical Field
The invention relates to the field of diode related products, in particular to a fast recovery diode chip structure.
Background
At present, the technology of the domestic fast diode is relatively mature, but the technology lag of the ultrafast recovery diode (less than 150ns) is limited, and particularly, the ultrafast soft recovery diode hardly has batch autonomous products and can not meet the requirement of a high-frequency high-efficiency power supply. Therefore, the research on the high-power ultrafast soft recovery diode is accelerated, and the localization of high-end traditional devices is improved, and the process is further accelerated.
But the welding of current quick recovery diode chip structure is comparatively loaded down with trivial details, and the dismouting is inconvenient, and it is more to consume time when overhauing, has certain defectiveness.
Disclosure of Invention
The invention aims to provide a fast recovery diode chip structure, which solves the problems that the existing fast recovery diode chip structure proposed in the background art is complicated in welding, inconvenient to assemble and disassemble and time-consuming in maintenance.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a quick recovery diode chip structure, includes upper cover, lower cover and chipset, the chipset includes the welding piece between a plurality of chips and a plurality of chips, the equal first latch segment of the equal fixedly connected with in both ends of upper cover, the equal fixedly connected with second latch segment in both ends of lower cover, it is equipped with the check lock lever to insert between first latch segment and the second latch segment, the one end fixedly connected with fixed block of check lock lever, the fixed cover of other end fixedly connected with of check lock lever, one side of upper cover is inserted and is equipped with first pin, the one end that first pin is located the upper cover is equipped with first connection piece, first connection piece offsets with the chipset, one side of lower cover is inserted and is equipped with the second pin, the one end that the second pin is located the lower cover is equipped with the second connection piece, the second connection piece offsets with the chipset.
Preferably, the locking rod is provided with external threads, the fixed sleeve is provided with a screw, and the fixed sleeve is in threaded connection with the locking rod.
Preferably, the thickness of the upper cover and the thickness of the lower cover are both 3 mm.
Preferably, the upper sealing cover and the lower sealing cover are both arranged in a concave shape and are in a long strip shape, and the first locking block and the second locking block are both arranged on the outer surface of the concave shape.
Compared with the prior art, the invention has the beneficial effects that:
1. this fast recovery diode chip structure: the chip packaging structure is simple and reasonable in structure, convenient to weld, low in manufacturing cost, high in qualification rate, convenient to disassemble and repair and suitable for large-scale popularization.
Drawings
Fig. 1 is a schematic structural diagram of a fast recovery diode chip structure according to the present invention;
fig. 2 is a schematic diagram of a structure at a position a of a fast recovery diode chip structure according to the present invention.
In the figure: 1-upper sealing cover, 2-lower sealing cover, 3-chip group, 4-chip, 5-second connecting sheet, 6-first locking block, 7-second locking block, 8-locking rod, 9-fixing block, 10-fixing sleeve, 11-first pin, 12-first connecting sheet, 13-second pin and 14-welding sheet.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
Referring to fig. 1-2, an embodiment of the present invention is shown: a fast recovery diode chip structure comprises an upper sealing cover 1, a lower sealing cover 2 and a chip group 3, wherein the chip group 3 comprises a plurality of chips 4 and welding sheets 14 between the chips 4, both ends of the upper sealing cover 1 are fixedly connected with first locking blocks 6, both ends of the lower sealing cover 1 are fixedly connected with second locking blocks 7, a locking rod 8 is inserted between the first locking blocks 6 and the second locking blocks 7, one end of the locking rod 8 is fixedly connected with a fixing block 9, the other end of the locking rod 8 is fixedly connected with a fixing sleeve 10, one side of the upper sealing cover 1 is inserted with a first pin 11, one end of the first pin 11 positioned in the upper sealing cover 1 is provided with a first connecting sheet 12, the first connecting sheet 12 abuts against the chip group 3, one side of the lower sealing cover 2 is inserted with a second pin 13, one end of the second pin 13 positioned in the lower sealing cover 2 is provided with a second connecting sheet 5, and the second connecting sheet 5 abuts against the chip group 3, a plurality of chips 4 on the chip group 3 are welded through a welding sheet 14, then an upper sealing cover 1 is fixed with a first pin 11 and a second pin 13 on a lower sealing cover 2 in advance, the upper sealing cover 1 and the lower sealing cover 2 are clamped, a locking rod 8 is inserted into a first locking block 6 and a second locking block 7, a fixing sleeve 10 is screwed, so that a first connecting sheet 12 and a second connecting sheet 5 are in contact with the chips 4, and the installation is completed.
Furthermore, the locking rod 8 is provided with external threads, the fixed sleeve 10 is provided with a screw port, and the fixed sleeve 10 is in threaded connection with the locking rod 8.
Further, the thickness of the upper cover 1 and the lower cover 2 is 3 mm.
Furthermore, the upper sealing cover 1 and the lower sealing cover 2 are both in a concave shape and are in a long strip shape, and the first locking block 6 and the second locking block 7 are both arranged on the outer surface of the concave shape.
The working principle is as follows: a plurality of chips 4 on the chip group 3 are welded through a welding sheet 14 in advance, then the upper sealing cover 1 is fixed with a first pin 11 and a second pin 13 on the lower sealing cover 2 in advance, the upper sealing cover 1 and the lower sealing cover 2 are clamped, the locking rod 8 is inserted into the first locking block 6 and the second locking block 7, the fixing sleeve 10 is screwed, the first connecting sheet 12 and the second connecting sheet 5 are made to contact with the chips 4, and the installation is completed.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (4)
1. The utility model provides a quick recovery diode chip structure, includes upper cover (1), lower cover (2) and chipset (3), its characterized in that: the chip group (3) comprises a plurality of chips (4) and welding sheets (14) between the chips (4), wherein both ends of the upper sealing cover (1) are fixedly connected with first locking blocks (6), both ends of the lower sealing cover (1) are fixedly connected with second locking blocks (7), a locking rod (8) is inserted between the first locking blocks (6) and the second locking blocks (7), one end of the locking rod (8) is fixedly connected with a fixing block (9), the other end of the locking rod (8) is fixedly connected with a fixing sleeve (10), one side of the upper sealing cover (1) is inserted with a first pin (11), one end of the first pin (11) positioned in the upper sealing cover (1) is provided with a first connecting sheet (12), the first connecting sheet (12) is abutted against the chip group (3), one side of the lower sealing cover (2) is inserted with a second pin (13), and a second connecting sheet (5) is arranged at one end of the second pin (13) in the lower sealing cover (2), and the second connecting sheet (5) is abutted to the chip group (3).
2. The fast recovery diode chip structure of claim 1, wherein: the locking device is characterized in that external threads are arranged on the locking rod (8), a screw opening is formed in the fixing sleeve (10), and the fixing sleeve (10) is in threaded connection with the locking rod (8).
3. The fast recovery diode chip structure of claim 1, wherein: the thickness of the upper sealing cover (1) and the thickness of the lower sealing cover (2) are both 3 mm.
4. The fast recovery diode chip structure of claim 1, wherein: the upper sealing cover (1) and the lower sealing cover (2) are both arranged in a concave shape and are in a long strip shape, and the first locking block (6) and the second locking block (7) are both arranged on the outer surface in the concave shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010077911.XA CN111063662A (en) | 2020-02-01 | 2020-02-01 | Fast recovery diode chip structure |
Applications Claiming Priority (1)
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CN202010077911.XA CN111063662A (en) | 2020-02-01 | 2020-02-01 | Fast recovery diode chip structure |
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CN111063662A true CN111063662A (en) | 2020-04-24 |
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CN202010077911.XA Pending CN111063662A (en) | 2020-02-01 | 2020-02-01 | Fast recovery diode chip structure |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2571895A1 (en) * | 1984-10-16 | 1986-04-18 | Silicium Semiconducteur Ssc | METHOD FOR MOUNTING TWO SEMICONDUCTOR COMPONENTS IN A COMMON PACKAGE AND DEVICE OBTAINED THEREBY |
CN201122596Y (en) * | 2007-11-28 | 2008-09-24 | 苏州固锝电子股份有限公司 | Afterflow diode module of solar cell panel |
CN202712166U (en) * | 2012-06-11 | 2013-01-30 | 临海市志鼎电子科技有限公司 | Electrode structure for ultrafast soft recovery diode module |
CN207149544U (en) * | 2017-08-03 | 2018-03-27 | 常州佳讯光电产业发展有限公司 | Paster recovers high-voltage diode soon |
CN211507605U (en) * | 2020-02-01 | 2020-09-15 | 深圳市芯域联合半导体科技有限公司 | Fast recovery diode chip structure |
-
2020
- 2020-02-01 CN CN202010077911.XA patent/CN111063662A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2571895A1 (en) * | 1984-10-16 | 1986-04-18 | Silicium Semiconducteur Ssc | METHOD FOR MOUNTING TWO SEMICONDUCTOR COMPONENTS IN A COMMON PACKAGE AND DEVICE OBTAINED THEREBY |
CN201122596Y (en) * | 2007-11-28 | 2008-09-24 | 苏州固锝电子股份有限公司 | Afterflow diode module of solar cell panel |
CN202712166U (en) * | 2012-06-11 | 2013-01-30 | 临海市志鼎电子科技有限公司 | Electrode structure for ultrafast soft recovery diode module |
CN207149544U (en) * | 2017-08-03 | 2018-03-27 | 常州佳讯光电产业发展有限公司 | Paster recovers high-voltage diode soon |
CN211507605U (en) * | 2020-02-01 | 2020-09-15 | 深圳市芯域联合半导体科技有限公司 | Fast recovery diode chip structure |
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