CN111063610A - Photoetching defect repairing method - Google Patents
Photoetching defect repairing method Download PDFInfo
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- CN111063610A CN111063610A CN201911398917.0A CN201911398917A CN111063610A CN 111063610 A CN111063610 A CN 111063610A CN 201911398917 A CN201911398917 A CN 201911398917A CN 111063610 A CN111063610 A CN 111063610A
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- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000001259 photo etching Methods 0.000 title claims abstract description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 165
- 239000000463 material Substances 0.000 claims abstract description 97
- 239000006184 cosolvent Substances 0.000 claims abstract description 83
- 238000005530 etching Methods 0.000 claims abstract description 66
- 239000004094 surface-active agent Substances 0.000 claims description 72
- 238000001459 lithography Methods 0.000 claims description 57
- 239000000126 substance Substances 0.000 claims description 36
- 150000003384 small molecules Chemical class 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 23
- 125000001931 aliphatic group Chemical group 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 11
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000945 filler Substances 0.000 claims description 9
- 238000004090 dissolution Methods 0.000 claims description 8
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 7
- 238000001179 sorption measurement Methods 0.000 abstract description 5
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- 238000005406 washing Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
The invention provides a photoetching defect repairing method, namely, a filling material and a cosolvent are covered on a patterned photoresist layer and a hard mask layer, the cosolvent has adsorption effect on hydrophilic parts and hydrophobic parts of disconnection defects and crack defects in the photoetching defects and the partially deprotected crack defects in the photoresist, and the filling material can be adsorbed at the photoetching defects by virtue of the cosolvent to realize the filling of the photoetching defects, so that the photoetching defects can be repaired before a subsequent etching process.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a photoetching defect repairing method.
Background
As integration density continues to increase in the semiconductor industry, photolithographic masks must project smaller and smaller structures onto a wafer. To meet this requirement, the exposure wavelength of the lithography system has been changed to smaller and smaller wavelengths. The lithography system will use significantly smaller wavelengths in the Extreme Ultraviolet (EUV) wavelength range.
13.5nm EUV lithography absorbs photons with an energy of 92eV, which is about 14 times higher than the energy of 6.4eV for 193nm photons, and the same number of photons of the illumination dose is only 1/14, which corresponds to 193 nm. Due to the fluctuation of the photon number, the defect is caused by too small line width (easy bridging) or too large line width (easy disconnection defect or crack defect) of the groove in the photoetching. The generated defects can affect the transfer of the pattern in the subsequent etching process.
Therefore, how to solve the problem of lithography defects in the lithography process, especially in the extreme ultraviolet lithography process, is very important.
Disclosure of Invention
The invention aims to provide a photoetching defect repairing method to solve the problem of photoetching defects in a photoetching process.
In order to solve the technical problem, the invention provides a method for repairing the photoetching defect, which comprises the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises a substrate, a hard mask layer positioned above the substrate and a patterned photoresist layer positioned above the hard mask layer, and the patterned photoresist layer has photoetching defects;
covering a filling material and a cosolvent on the patterned photoresist layer and the hard mask layer, wherein the filling material is preferentially adsorbed at the photoetching defect by virtue of the cosolvent to form a filling layer;
removing the redundant filling layer to form a patterned photoresist layer after the photoetching defects are repaired;
and etching the hard mask layer by taking the repaired patterned photoresist layer as a mask to form a patterned hard mask layer.
Optionally, in the method for repairing a lithography defect, the method for forming the patterned photoresist layer includes euv lithography.
Optionally, in the method for repairing lithography defects, the lithography defects include at least one of a bridge defect, a disconnection defect, and a gap defect; and rotating the substrate in the process of covering the patterned photoresist layer and the hard mask layer with a filling material and a cosolvent so that the filling material is preferentially adsorbed at the photoetching defect by the cosolvent.
Optionally, in the method for repairing lithography defects, the filling material includes a surfactant, and the surfactant includes a hydrophilic surfactant, the hydrophilic surfactant is dissolved in an alkaline aqueous solution and also dissolved in an organic solvent with partial polarity, and a dissolution rate of the hydrophilic surfactant in the organic solvent is greater than a dissolution rate of the hydrophilic surfactant in the alkaline aqueous solution.
Optionally, in the method for repairing lithography defects, the filling material further includes a small molecule substance, and when the lithography defects include a line break defect and/or a gap defect, the diameter of the small molecule substance is smaller than the widths of the line break defect and the gap defect.
Optionally, in the method for repairing lithography defects, the small molecule substance includes a polymer having at least one structure of a benzene ring, an aliphatic ring, and an aromatic heterocyclic ring.
Optionally, in the method for repairing lithography defects, before the step of covering the filling material and the cosolvent, the method further includes increasing the number of small molecular structures in the surfactant, where the small molecular structures include at least one of a benzene ring, an aliphatic ring, and an aromatic heterocyclic ring, so that a dissolution rate of the surfactant in the organic solvent is greater than a dissolution rate in the alkaline aqueous solution.
Optionally, in the method for repairing a lithography defect, when the lithography defect includes a bridge defect, before the step of etching the hard mask layer, the method further includes removing the bridge defect, so that the photoresist patterns connected to the bridge defect are disconnected from each other.
Optionally, in the method for repairing a lithographic defect, after the step of removing the excess filling layer, the method further includes the following steps:
baking the filling layer to enable the filling material in the filling layer to be crosslinked;
and removing the excessive crosslinked filling layer.
Optionally, in the method for repairing lithography defects, the etching resistance of the crosslinked filling layer is matched with the etching resistance of the patterned photoresist layer.
In summary, the present invention provides a method for repairing a lithography defect, in which a filling material and a cosolvent are covered on the patterned photoresist layer and the hard mask layer, the cosolvent has an adsorption effect on a hydrophilic portion and a hydrophobic portion of a disconnection defect and a crack defect in the lithography defect, and on a part of the deprotected crack defect in the photoresist, and the filling material can be adsorbed at the lithography defect by the cosolvent, so that the lithography defect can be filled before a subsequent etching process, that is, the lithography defect can be repaired.
Drawings
FIG. 1 is a schematic diagram of a bridge defect structure;
FIG. 2 is a schematic diagram of a broken line defect structure;
FIG. 3 is a scanned view of the bridging defect of FIG. 1;
FIG. 4 is a scan of a break line defect of FIG. 2;
FIG. 5 is a graph showing the relationship between CD value and the occurrence probability of lithography defects;
FIGS. 6-11 are schematic structural diagrams illustrating steps of a method for repairing a disconnection defect and/or a gap defect according to an embodiment of the present invention;
FIGS. 12-17 are schematic structural diagrams illustrating steps of a method for repairing a bridge defect according to an embodiment of the invention;
wherein, in fig. 1 to 5:
01-substrate, 02-patterned photoresist layer, 0201-bridging defect, 0202-disconnection defect;
in fig. 6 to 17:
10-substrate, 20-hard mask layer, 201-patterned hard mask layer, 30-patterned photoresist layer, 301-lithographic defect, 40-filling material, 401-crosslinked filling layer, 50-cosolvent.
Detailed Description
13.5nm EUV lithography the same illuminator used to absorb photons having an energy of 92eV, which is about 14 times higher than the energy of 6.4eV for a 193nm photonThe quantum number is only 1/14 corresponding to 193 nm. Due to the fluctuation of the photon count, the photolithography defect, which may be the bridging defect 0201 (see fig. 1 and 3), or the disconnection defect 0202 (see fig. 2 and 4) or the crack defect, is caused by the too small or too large trench line width in photolithography. For example, a photoresist layer is formed on the substrate 01, and then a patterned photoresist layer 02 satisfying process requirements is formed through an extreme ultraviolet lithography process. When the line width of the trench in the patterned photoresist layer 02 is less than 20nm, the photoresist is prone to have a bridging defect 0201, that is, a little photoresist remains at the bottom of the trench, and the remaining photoresist is perpendicular to the cross section of the trench line. Referring to fig. 5, it can be seen that the smaller the trench line width (corresponding to the smaller the average CD value, a represents the smaller end of the average CD value, and B represents the larger end of the average CD value), the greater the probability of occurrence of the bridging defect 0201 (X represents the trend line of probability of occurrence of bridging defect, and the probability of random lithography defect increases from bottom to top on the ordinate), i.e., the smaller the trench line width, the more likely the bridging defect 0201 occurs. When the line width of the trench in the patterned photoresist layer 02 is large, the photoresist is prone to have a line break defect or a crack defect, that is, the line break defect or the crack defect is prone to occur on the trench line, and the line break defect and the crack defect are along the cross section of the trench line. Continuing with FIG. 5, Y represents the trend line of the density of the line break defect (vertical axis from bottom to top in cm)2Increased density of photolithographic defects) it has been found that the larger the trench linewidth (corresponding to the larger the average CD value), the greater the likelihood of line break defects. The line break defect or crack defect is generally only 1 nm-10 nm in size, and the materials such as polysilicon, silicon-containing anti-reflection layer and the like can still reach about 1 nm-5 nm in size to form a defect after being transferred by the hard mask layer, so that the photoetching defect formed in the photoetching process of the photoresist can influence the transfer of the pattern in the subsequent etching process. Therefore, it is crucial to solve the problem of lithography defects in the lithography process, especially in the euv lithography process.
In order to solve the problem of the photoetching defects in the photoetching process, particularly the extreme ultraviolet photoetching process, the invention provides a photoetching defect repairing method.
The photoetching defect repairing method comprises the following steps:
firstly, providing a semiconductor structure, wherein the semiconductor structure comprises a substrate, a hard mask layer positioned above the substrate and a graphical photoresist layer positioned above the hard mask layer, and the graphical photoresist layer has photoetching defects;
secondly, covering a filling material and a cosolvent on the patterned photoresist layer and the hard mask layer, wherein the filling material is preferentially adsorbed at the photoetching defect by virtue of the cosolvent to form a filling layer;
then, removing the redundant filling layer to form a patterned photoresist layer after the photoetching defects are repaired;
and finally, etching the hard mask layer by taking the repaired graphical photoresist layer as a mask to form a graphical hard mask layer.
Referring to fig. 6, first, a semiconductor structure is provided and includes a substrate 10, a hard mask layer 20 over the substrate 10, and a patterned photoresist layer 30 over the hard mask layer 20, wherein the patterned photoresist layer 30 has a lithography defect 301. The substrate 10 may be a silicon substrate, a substrate made of other semiconductor materials, or a substrate having a semiconductor structure layer, which is not limited herein, and may be any substrate. Then, a hard mask layer 20 is formed on the substrate 10, and a method of forming the hard mask layer 20 includes deposition, spin coating, or sputtering, and the like, which may be any method of forming a thin film structure. The hard mask layer 20 may be made of a material different from that of the substrate 10, and is preferably made of a hydrophobic material, such as hydrophobic polysilicon or a silicon-containing anti-reflective layer. A photoresist layer is formed over the hard mask layer 20 and is subjected to photolithography, preferably EUV (extreme ultraviolet lithography), to form a patterned photoresist layer 30. The patterned photoresist layer 30 of the present invention has a lithography defect 301 thereon, and the lithography defect 301 is a defect generated during a lithography process of the photoresist layer. The patterned photoresist layer 30 has trenches therein, and the lithographic defects 301 may be formed differently according to the line widths of the trenches. When the line width of the trench is large (>20nm), the photolithography defects 301 mainly occurring on the patterned photoresist layer 30 include crack defects and/or line break defects. When the line width of the trench is smaller than 20nm, photoresist is easily left at the bottom of the trench in the patterned photoresist layer 30, and a bridging defect is formed, that is, the bridging defect is mainly used. In addition to this, in the process of forming a photoresist layer and performing photolithography on the photoresist layer, a minute gap of which the portion is deprotected may also occur inside the photoresist. The line width of the trench in the patterned photoresist layer 30 may be adjusted according to the process requirement, and the line widths of the trenches may be the same or different, so that the above-mentioned lithography defects 301 may occur separately or simultaneously.
When there is a line break defect and/or a gap defect (the gap defect includes a crack defect and/or a partially deprotected gap defect inside the photoresist) on the patterned photoresist layer 30, a method for repairing the line break defect and/or the gap defect is described with reference to fig. 7 to 11.
Referring to fig. 7, the patterned photoresist layer 30 and the hard mask layer 20 are first covered with a filling material 40 and a cosolvent 50, and the filling material 40 is preferentially adsorbed at the lithography defect 301 by the cosolvent 50 to form a filling layer. Methods of covering the photoresist layer 30 and the hard mask layer 20 with the filler material 40 and the cosolvent 50 include spin coating and aerosol spraying. While covering the filling material 40 and the cosolvent 50, the substrate 10 may be rotated to make the filling material 40 preferentially adsorb in the line break defect and/or the gap defect by the cosolvent 50 to form the filling layer. The upper surface of the formed filling layer is not lower than the upper surface of the patterned photoresist layer 30, and the filling material 40 and the cosolvent 50 can fill the line break defect and/or the gap defect in the patterned photoresist layer 30.
The filler material 40 may be a surfactant, which may be in a liquid or gaseous state, preferably a liquid state. The surfactant is preferably a hydrophilic surfactant, and the hydrophilic surfactant is dissolved in an alkaline aqueous solution or an organic solvent having partial polarity, such as propylene glycol methyl ether acetate, propylene glycol methyl ether, ethanol, propanol, or the like. Preferably, the surfactant has a solubility in the organic solvent greater than a solubility in the aqueous alkaline solution. In order to make the solubility of the surfactant in the organic solvent greater than that in the basic aqueous solution, a surfactant having at least one structure of a benzene ring, an aliphatic ring, or an aromatic heterocyclic ring may be directly selected, or the number of small molecular structures including at least one of a benzene ring, an aliphatic ring, and an aromatic heterocyclic ring may be increased in the surfactant before the step of covering the filler material 40 and the cosolvent 50. Preferably, the diameter of the small molecular structure is smaller than the width of the broken line defect and the gap defect.
The hydrophilic ability of the surfactant is preferably matched to the hydrophilic ability of the hydrophilic portions of the line break defects and crack defects so that the surfactant is adsorbed to the hydrophilic portions of the line break defects and crack defects in the patterned photoresist layer 30 as much as possible. The photoresist is hydrophobic, but after exposure, the exposed portion becomes hydrophilic, so the photoresist of the exposed portion can be washed away by an aqueous developer. The photoresist at the positions of the line break defects and the crack defects is also partially exposed, and the interface between the exposed photoresist and the air is hydrophilic, that is, the hydrophilic part in the line break defects and the crack defects in the patterned photoresist layer 30. But the crack defects and the disconnection defects are more difficult to be exposed at a position closer to the inside of the photoresist (which can also be described as a position farther from the upper surface of the photoresist), while the interface of the photoresist and the air, which is exposed by the unexposed portion, exhibits hydrophobicity, and thus, the crack defects and the disconnection defects include hydrophilic portions and hydrophobic portions. The hydrophilic surfactant can adsorb to the hydrophilic portion of the disconnection defect and the crack defect, but cannot adsorb to the hydrophobic portion of the disconnection defect and the crack defect, so that the adsorption force of the surfactant to the interface (including the hydrophilic portion and the hydrophobic portion) of the photoresist and the air exposed in the disconnection defect and the crack defect is not large, and the surfactant is easily detached. And the partially deprotected gap defect inside the photoresist is not exposed to light and thus is hydrophobic, and a hydrophilic surfactant is not adsorbed to the partially deprotected gap defect inside the photoresist. In this embodiment, a cosolvent 50 is added to the filling material 40, the cosolvent 50 may be alcohols, phenols, esters, or the like, such as propylene glycol methyl ether acetate (PGMEA for short), and the cosolvent 50 may be adsorbed to the hydrophobic portion or the hydrophilic portion, so that the line break defect, the crack defect, and the partially deprotected crack defect inside the photoresist are better filled, the molecular force of the cosolvent 50 is very large, and the adsorbability of the cosolvent 50 to the hydrophilic portion and the hydrophobic portion is very large, so that the surfactant and the cosolvent adsorbed to the line break defect and the crack defect (including the crack defect and the partially deprotected crack defect inside the photoresist) are not easily detached.
When the molecular diameter of the surfactant is smaller than the width of the lithography defect, the cosolvent 50 of the surfactant-coated molecules adsorbs to the lithography defect, namely to the line break defect and the crack defect, including the hydrophilic part and the hydrophobic part of the line break defect and the crack defect, and also adsorbs to the partially deprotected gap defect inside the photoresist, that is, the surfactant molecules can adsorb to the line break defect and/or the gap defect through the cosolvent 50. And through the rotation of the substrate 10, the surfactant can be preferentially adsorbed in the broken line defects and/or the gap defects by virtue of the cosolvent 50, so that the broken line defects and/or the gap defects are better filled. Meanwhile, molecules of the hydrophilic surfactant, which are not coated with the co-solvent 50, may also be adsorbed to the hydrophilic portion of the crack defect and/or the disconnection defect.
The filling material may include a small molecule substance in addition to a surfactant, that is, the surfactant, the cosolvent 50 and the small molecule substance are coated on the patterned photoresist layer 30 and the hard mask layer 20, and the small molecule substance and the surfactant can be adsorbed at the lithography defect 301 of the patterned photoresist layer 30 by the cosolvent. The small molecular substance is capable of being dissolved in the cosolvent 50, and is preferably a polymer having at least one structure of a benzene ring, an aliphatic ring and an aromatic heterocyclic ring, and the diameter of the small molecular substance is smaller than the widths of the line break defect and the gap defect, that is, if the lithography defect only includes the line break defect or the gap defect, the diameter of the small molecular substance is smaller than the widths of the line break defect or the gap defect, and if the lithography defect includes both the line break defect and the gap defect, the diameter of the small molecular substance is smaller than both the widths of the line break defect and the gap defect. In this case, the diameter of the molecule of the surfactant is not limited. The surfactant is preferably a hydrophilic surfactant, the hydrophilic surfactant can be adsorbed on the hydrophilic part of the crack defect and the line break defect, and the cosolvent 50 can coat the small molecular substance to be adsorbed in the crack defect and the line break defect (including a hydrophobic part and a hydrophilic part) and also can be adsorbed in the partially deprotected crack defect inside the photoresist, so that the crack defect, the line break defect and the partially deprotected crack defect inside the photoresist can be better filled.
The filling material 40 may also be only a small molecule substance, i.e. the cosolvent 50 and the small molecule substance together cover the patterned photoresist layer 30 and the hard mask layer 20, and the small molecule substance can be adsorbed at the lithography defect 301 of the patterned photoresist layer 30 by the cosolvent. The small molecular substance is hydrophilic, is dissolved in the cosolvent, is preferably a polymer with at least one structure of a benzene ring, an aliphatic ring and an aromatic heterocyclic ring, and has a diameter smaller than the widths of the broken line defect and the gap defect.
The filling material selected in this embodiment can complete self-crosslinking at a suitable temperature, such as 20-250 ℃, or crosslink with the surface of the photoresist, so that the formed filling layer can be baked at the suitable temperature before the hard mask layer 20 is etched by using the repaired patterned photoresist layer as a mask, so as to increase the filling effect at the photoresist defect, and enhance the etching resistance at the photoresist defect, even at the entire photoresist layer. In other embodiments of the present invention, some filling materials with strong self-etching resistance may also be selected, so as to omit the operation of cross-linking the filling layer by baking before etching the hard mask layer 20 by using the repaired patterned photoresist layer as a mask, and ensure that the lithography defect 301 in the photoresist layer is not transferred into the hard mask layer 20 in the process of etching the hard mask layer 20 by using the repaired patterned photoresist layer 30 as a mask.
Referring to fig. 8, after the step of forming the fill layer, the excess fill layer, i.e., the fill material and the flux 50 in the trench and the upper surface of the patterned photoresist layer 30, is removed. The method of removal includes rinsing with a rinsing agent including deionized water, i.e., multiple rinses may be used to remove excess filler material and co-solvent 50. After rinsing and spin-drying, electron microscope observation of the patterned photoresist layer 30 is performed to determine whether to continue rinsing. When it is observed that the pattern of the patterned photoresist layer 30 is not affected by the fill material 40 and the co-solvent 50 on the surface of the patterned photoresist layer 30 and in the trench (at which time trace amounts of the fill material and the co-solvent still remain on the surface of the patterned photoresist layer 30 and in the trench), the cleaning process can be fixed, and if more active agent remains in the trench, the rinsing time in the cleaning process can be increased. The number and time of the rinsing needs to be adjusted according to the size of the trench in the patterned photoresist 30, and the smaller the trench size, the longer the rinsing time required, and the greater the number of the rinsing. In this process, the filling material and the cosolvent on the upper surface of the patterned photoresist layer 30 protect the filling material and the cosolvent in the line break defect and the gap defect, so that the filling material and the cosolvent in the line break defect and the gap defect are not affected by the rinsing.
The step of removing the redundant filling layer not only comprises the step of removing the redundant filling layer by adopting a washing method, but also can further remove the filling layer by adopting a method of removing residual etching after the steps of washing and spin-drying. When the self-etching resistance of the filling material 40 in the filling layer is matched with the etching resistance of the patterned photoresist layer 30, that is, the self-etching resistance of the filling material 40 is similar to (or close to) the etching resistance of the patterned photoresist layer 30, the residual etching may be directly performed after the rinsing and spin-drying steps, so as to further remove the excess filling layer (that is, trace amounts of the filling material and the cosolvent still remain on the surface of the patterned photoresist layer 30 and in the trench after the rinsing and spin-drying steps), and finally only the filling material 40 and the cosolvent 50 in the lithographic defect 301 are remained, so as to form the patterned photoresist layer after the lithographic defect 301 is repaired. Therefore, the step of removing the excess filling layer includes a step of rinsing and spin-drying and a step of removing the residual etching. In order to improve the etching resistance of the filling material 40 in the filling layer and match the etching resistance of the filling material 40 with the etching resistance of the patterned photoresist layer 30, the etching resistance of the filling material 40, that is, the etching resistance of the filling layer can be controlled by increasing the small molecular structure in the filling material 40, that is, by controlling the type and the addition amount of the small molecular structure. The small molecular structure comprises at least one of a benzene ring, an aliphatic ring and an aromatic heterocyclic ring. For example, when the filling material 40 includes a surfactant, the surfactant having a small molecular structure may be directly selected or modified to link the small molecular structure before the step of covering the filling material 40 and the cosolvent 50 on the patterned photoresist layer 30 and the hard mask layer 20. When the filling material 40 further includes a small molecule substance, the etching resistance of the filling layer can be improved by increasing the etching resistance of the surfactant, and the etching resistance of the filling layer can also be increased by adjusting the small molecule substance, for example, the small molecule substance can be a material with a relatively strong etching resistance, such as a material with a benzene ring. Aliphatic or aromatic heterocycles, and the like.
The method for removing the residual etching is preferably plasma etching. Since the filling material and the cosolvent on the upper surface of the patterned photoresist layer 30 protect the filling material and the cosolvent in the line break defect and the gap defect, the surfactant and the cosolvent in the line break defect and the gap defect are not etched away. In this process, since the patterned photoresist layer 30 has a similar (or similar) etching resistance to the filling material 40, the patterned photoresist layer 30 may be slightly etched during the residual etching process, and finally a repaired patterned photoresist layer is formed, i.e., the repaired patterned photoresist layer includes the patterned photoresist layer 30 and the filling layer located in the line break defect and/or the gap defect.
In this example, the step of removing the excess filling layer may only include removing the excess filling material 40 and the cosolvent 50 by washing, but it is necessary to include the following steps after the steps of washing and spin-drying:
firstly, baking the filling layer to enable the filling material in the filling layer to be crosslinked;
then, the excess crosslinked filling layer 401 is removed.
Referring to fig. 9, after the step of removing the excess filling layer by rinsing, the filling layer is baked to crosslink the filling material in the filling layer. Due to the fact that the line breakage defects and the gap defects have certain sizes, the line breakage defects and the gap defects can be better filled through cross-linking of the filling materials, and the line breakage defects and the gap defects are less prone to falling off. The baking temperature is 20-250 ℃, and the etching resistance of the crosslinked filling layer 401 is matched with the etching resistance of the photoresist, that is, the etching resistance of the crosslinked filling layer 401 is similar to (or close to) the etching resistance of the photoresist, so that the crosslinked filling layer 401 cannot be etched in the subsequent etching process of the hard mask layer 20, and therefore, the disconnection defect or the gap defect on the patterned photoresist layer 30 cannot be transmitted to the hard mask layer 20. When the filler material 40 includes only a surfactant, the surfactant has a crosslinkable structure including self-crosslinking of the surfactant and/or crosslinking of the contact surface of the surfactant with the patterned photoresist layer 30. In order to improve the etching resistance of the crosslinked filling layer 401, so that the etching resistance of the crosslinked filling layer 401 matches the etching resistance of the patterned photoresist layer 30, a surfactant with a small molecular structure may be directly selected, or before the step of covering the patterned photoresist layer 30 and the hard mask layer 20 with the filling material 40 and the cosolvent 50, a small molecular structure may be added to a molecule of the surfactant, that is, the surfactant is modified so as to be capable of linking the small molecular structure, where the small molecular structure includes at least one of a benzene ring, an aliphatic ring and an aromatic heterocyclic ring. Therefore, the anti-etching capability of the crosslinked filling layer 401 with the small molecular structure is enhanced relative to the anti-etching capability of the crosslinked filling layer 401 without the small molecular structure, and the anti-etching capability of the crosslinked filling layer 401 can be controlled by controlling the type and the addition amount of the small molecular structure, so that the anti-etching capability of the crosslinked filling layer 401 is matched with the anti-etching capability of the photoresist. The co-solvent 50 is volatilized during the baking process.
When the co-solvent 50 also has a structure capable of being crosslinked in a molecule, a part of the co-solvent 50 may also be crosslinked during baking, and the crosslinking in the filling layer includes at least: self-crosslinking of the co-solvent 50, crosslinking of the co-solvent 50 with the fill material, crosslinking of the co-solvent 50 with the contact surface of the patterned photoresist layer 30, self-crosslinking of the fill material, and crosslinking of the fill material with the contact surface of the patterned photoresist layer 30.
When the filling material further comprises a small molecule substance, at least one of the small molecule substance and the surfactant has a cross-linkable structure, namely the surfactant and/or the small molecule substance has a cross-linked structure. When the surfactant and the small molecule have a crosslinkable structure, the crosslinking in the filling layer at least includes self-crosslinking of the small molecule substance and the surfactant, and crosslinking of the small molecule substance, the surfactant, and the contact surface of the patterned photoresist layer 30 with each other.
When the filling material only comprises the small molecule substance, the small molecule substance has a cross-linkable structure, and the cross-linking at least comprises the self-crosslinking of the small molecule substance and the cross-linking of the contact surface of the patterned photoresist layer 30.
Referring to fig. 10, after the step of baking the filling layer to crosslink the filling material in the filling layer, the excess crosslinked filling layer 401 is removed to form a patterned photoresist layer after the lithographic defect 301 is repaired. The step of removing the excess cross-linked filling layer 401 refers to removing the cross-linked filling layer 401 except the lithography defect 301, and the removing method is preferably residual etching, and more preferably plasma dry etching. Since the crosslinked filling layer on the upper surface of the patterned photoresist layer 30 protects the crosslinked filling layer in the line break defect and the gap defect, the crosslinked filling layer in the line break defect and the gap defect is not etched away. In this process, since the patterned photoresist layer 30 and the cross-linked filling layer 401 have similar (or similar) etching resistance, the patterned photoresist layer 30 may be slightly etched during the process of removing the excess cross-linked filling layer 401, and finally a repaired patterned photoresist layer is formed, i.e. the repaired patterned photoresist layer includes the patterned photoresist layer 30 and the cross-linked filling layer 401 located in the lithography defect 301.
Referring to fig. 11, after the step of forming the repaired patterned photoresist layer, the hard mask layer 20 is etched using the repaired patterned photoresist layer as a mask to form a patterned hard mask layer 201, and the patterned hard mask layer 201 has no defect. Namely, the photoresist pattern without the photoetching defects after being repaired is transferred to the hard mask through the etching action.
In this embodiment, the cosolvent may be adsorbed to a hydrophilic portion of a line break defect and a crack defect in the lithography defect, may be adsorbed to a hydrophobic portion of the line break defect and the crack defect, and may also be adsorbed to a partially deprotected crack defect inside a photoresist in the lithography defect, and the filling material may be adsorbed to the lithography defect by the cosolvent, so that the lithography defect is well filled, and the filled filling material and the cosolvent (filling layer) are not easily detached. Therefore, after the steps of washing and spin-drying, the filling material in the filling layer can be crosslinked by baking, the filling effect of the photoetching defect is further optimized, the filling layer in the photoetching defect is less prone to falling off, and then the repaired graphical photoresist layer is formed by removing the redundant crosslinked filling layer; after the step of rinsing, the repaired patterned photoresist layer may also be formed directly by residue removal etching without baking, i.e., without crosslinking the filling layer.
Therefore, after the photoresist layer is subjected to photoetching development, a filling material and a cosolvent are covered (namely, the filling material and the cosolvent are covered on the patterned photoresist layer and the hard mask layer), the defects are covered by utilizing the adsorption of the filling material and the cosolvent on the line break defects and the gap defects and are not easy to fall off, the line break defects and/or the gap defects can be filled before a subsequent etching process, namely, the photoetching defects are repaired, the problem of the photoetching defects in the photoetching process, particularly in the extreme ultraviolet photoetching process, is solved, and meanwhile, the integral etching resistance of the photoresist can be enhanced.
When the lithography defect 301 in the patterned photoresist layer 30 includes a bridge defect, photoresist remains at the bottom of the trench (see fig. 12). The repairing process of the lithography defect 301 is shown in fig. 13 to 17.
Referring to fig. 13, a filling material 40 and a cosolvent 50 are first covered on the patterned photoresist layer 30 and the hard mask layer 20, and the substrate 10 is rotated so that the filling material 40 is preferentially adsorbed at the lithography defect 301 by the cosolvent 50, thereby forming a filling layer. The methods of covering the filling material 40 and the cosolvent 50 include spin coating and aerosol spraying methods. The filler material is preferably a surfactant, preferably a hydrophilic surfactant, the hydrophilic capacity of which matches that of the photoresist surface after lithographic development, preferably a liquid. And the hydrophilic surfactant is dissolved in an alkaline aqueous solution and also dissolved in an organic solvent with partial polarity, and preferably, the dissolution rate of the surfactant in the organic solvent is greater than that in the alkaline aqueous solution. The co-solvent 50 may coat the molecules of the surfactant to adsorb on the bridging defects. The filling material 40 may further include a small molecule substance, and the co-solvent 50 may also coat the small molecule substance to be adsorbed on the bridging defect.
Referring to fig. 14, after the step of forming the filling layer, the excess filling layer is removed. The method of removal includes rinsing, and the rinsing agent includes deionized water, i.e., excess filler material 40 and co-solvent 50 may be removed by multiple rinses. After the rinsing and spin-drying, the patterned photoresist layer 30 is observed by an electron microscope, when the pattern is not affected by the filling material 40 and the cosolvent 50 on the surface of the patterned photoresist layer 30 and in the trench, the cleaning procedure can be fixed, and if more active agent remains in the trench, the rinsing time in the cleaning procedure is continuously increased. The number of times and time of the rinsing needs to be adjusted according to the size of the trench in the patterned photoresist 30.
After the step of removing the excess filling layer by rinsing, the filling layer can be further removed directly by a residual removal etch while removing the bridging defects. And the etch resistance of the filling layer is matched with the etch resistance of the patterned photoresist layer 30, and the patterned photoresist layer 30 is slightly etched in the process of removing the residual etch.
In addition, after the step of removing the excess filling layer by using the rinsing method, the filling layer may be baked to crosslink the filling material in the filling layer (see fig. 15), and the etching resistance of the crosslinked filling layer 401 is matched with the etching resistance of the photoresist, that is, the etching resistance of the crosslinked filling layer 401 is similar (or similar) to the etching resistance of the photoresist. Wherein the baking temperature is 20-250 ℃. When the filler material includes only a surfactant, the surfactant has a crosslinkable structure including self-crosslinking of the surfactant and/or crosslinking of the contact surface of the surfactant with the patterned photoresist layer 30. During baking, the co-solvent is volatilized. If the co-solvent also has a crosslinkable structure, the crosslinking also includes self-crosslinking of the co-solvent, crosslinking of the co-solvent with a surfactant, and crosslinking of the contact surface with the patterned photoresist layer 30.
When the filling material further comprises a small molecule substance, at least one of the small molecule substance and the surfactant has a cross-linkable structure, namely the surfactant and/or the small molecule substance has a cross-linkable structure. When the surfactant and the small molecule have a crosslinkable structure, the crosslinking in the filling layer includes at least self-crosslinking of the small molecule substance and the surfactant, and crosslinking of the small molecule substance, the surfactant, and the contact surface of the patterned photoresist layer 30 with each other.
Referring to fig. 16, after the step of baking the filling layer to crosslink the filling material in the filling layer, the excess crosslinked filling layer 401 is removed, and in addition, the bridge defect needs to be removed, so that the bridge defect and the connected photoresist pattern are disconnected from each other, that is, the photoresist remaining on the upper surface of the patterned photoresist layer 30 and in the trench is removed, and the repaired patterned photoresist layer is formed. The method for removing the crosslinked filling layer 401 and the bridge defects is preferably dry etching (residual etching), and is more preferably plasma etching. Since the etching resistance of the crosslinked filling layer 401 is matched with the etching resistance of the photoresist layer, the patterned photoresist layer 30 is slightly etched in the residual etching process.
Referring to fig. 17, after the repaired patterned photoresist layer is formed, the hard mask layer 20 is etched using the repaired patterned photoresist layer as a mask to form a patterned hard mask layer 201, and the patterned hard mask layer 201 does not have a defect problem caused by a bridge defect. Namely, the photoresist pattern without the photoetching defects after being repaired is transferred to the hard mask through the etching action.
In this embodiment, the method for repairing the lithographic defect, that is, by covering the filling material and the cosolvent and by removing the residual etching, can eliminate the bridging defect in the patterned photoresist layer.
In addition, when the lithography defect includes a bridge defect and also includes a line break defect and/or a gap defect, the lithography defect repairing method can solve the problem of the line break defect and/or the gap defect while solving the bridge defect as long as the condition for eliminating the bridge defect and the condition for filling the line break defect and/or the gap defect are simultaneously satisfied.
Therefore, in the method for repairing the lithography defects, the cosolvent has an adsorption effect on hydrophilic parts and hydrophobic parts of the disconnection defects and the crack defects in the lithography defects and the partially deprotected crack defects in the photoresist, and the filling material can be adsorbed in the disconnection defects and/or the crack defects by virtue of the cosolvent, so that the disconnection defects and the crack defects are well filled, and the filled filling material is not easy to fall off. Therefore, after the step of washing, the filling material can be crosslinked by baking, so that the filling effect of the broken line defect and/or the gap defect is further optimized, the broken line defect and/or the gap defect of the photoresist are not easy to fall off, the broken line defect and/or the gap defect of the photoresist are filled, and the integral etching resistance of the photoresist is enhanced; after the step of rinsing, the residual etching can be directly performed without baking, that is, without crosslinking the filling material, so as to fill the photoresist disconnection defect and/or gap defect. And simultaneously, the bridging defects in the patterned photoresist layer can be eliminated through the residual etching effect. Therefore, the photoetching defect repairing method provided by the invention can solve the photoetching defect problem in the photoetching process, especially in the extreme ultraviolet photoetching process.
The photoetching defect repairing method provided by the invention can solve the problem of single defect of the photoresist in the photoetching process, particularly in extreme ultraviolet photoetching, namely only one of bridging defect, disconnection defect or gap defect exists, and can also solve the problem of multi-defect of the photoresist in the photoetching process, for example, at least two photoetching defects of bridging defect, disconnection defect or gap defect exist simultaneously.
Finally, it should be noted that the above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. That is, all equivalent changes and modifications made according to the content of the claims of the present invention should be within the technical scope of the present invention.
Claims (10)
1. A method for repairing a lithography defect is characterized by comprising the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises a substrate, a hard mask layer positioned above the substrate and a patterned photoresist layer positioned above the hard mask layer, and the patterned photoresist layer has photoetching defects;
covering a filling material and a cosolvent on the patterned photoresist layer and the hard mask layer, wherein the filling material is preferentially adsorbed at the photoetching defect by virtue of the cosolvent to form a filling layer;
removing the redundant filling layer to form a patterned photoresist layer after the photoetching defects are repaired;
and etching the hard mask layer by taking the repaired patterned photoresist layer as a mask to form a patterned hard mask layer.
2. The method of repairing lithographic defects of claim 1, wherein said patterned photoresist layer is formed by a process comprising extreme ultraviolet lithography.
3. The lithographic defect repair method of claim 1, wherein the lithographic defect comprises at least one of a bridge defect, a line break defect, and a seam defect; and rotating the substrate in the process of covering the patterned photoresist layer and the hard mask layer with a filling material and a cosolvent so that the filling material is preferentially adsorbed at the photoetching defect by the cosolvent.
4. The method for repairing lithography defects according to claim 3, wherein said filling material comprises a surfactant, and said surfactant comprises a hydrophilic surfactant, said hydrophilic surfactant being dissolved in an alkaline aqueous solution and also being dissolved in an organic solvent having a partial polarity, and having a dissolution rate in said organic solvent which is greater than that in said alkaline aqueous solution.
5. The method for repairing lithography defects according to claim 4, wherein the filling material further comprises a small molecular substance, and when the lithography defects include line break defects and/or gap defects, the diameter of the small molecular substance is smaller than the width of the line break defects and the gap defects.
6. The method for repairing lithography defects according to claim 5, wherein said small molecule substance comprises a polymer having at least one structure of a benzene ring, an aliphatic ring and an aromatic heterocyclic ring.
7. The lithographic defect repair method of claim 4, further comprising, before the step of covering the filler material and the cosolvent, increasing the number of small molecular structures including at least one of a benzene ring, an aliphatic ring, and an aromatic heterocyclic ring in the surfactant such that a dissolution rate of the surfactant in the organic solvent is greater than a dissolution rate in the alkaline aqueous solution.
8. The method of repairing a lithography defect of claim 3, when said lithography defect includes a bridge defect, further comprising removing said bridge defect to disconnect photoresist patterns connected by said bridge defect from each other before the step of etching said hard mask layer.
9. The lithographic defect repair method of claim 1, further comprising, after the step of removing the excess fill layer, the steps of:
baking the filling layer to enable the filling material in the filling layer to be crosslinked;
and removing the excessive crosslinked filling layer.
10. The lithographic defect repair method of claim 9, wherein the etch resistance of the crosslinked fill layer is matched to the etch resistance of the patterned photoresist layer.
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|---|---|---|---|---|
| CN115145108A (en) * | 2022-09-05 | 2022-10-04 | 上海传芯半导体有限公司 | EUV (extreme ultraviolet) grade substrate, EUV mask base plate, EUV mask plate and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1726431A (en) * | 2002-10-21 | 2006-01-25 | 纳米墨水公司 | Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrications |
| CN105182684A (en) * | 2015-10-20 | 2015-12-23 | 京东方科技集团股份有限公司 | Overhauling method of mask plate |
| CN106098541A (en) * | 2015-04-30 | 2016-11-09 | 三星显示有限公司 | The method manufacturing mask |
| CN209641653U (en) * | 2019-02-28 | 2019-11-15 | 长鑫存储技术有限公司 | Alignment mark |
-
2019
- 2019-12-30 CN CN201911398917.0A patent/CN111063610B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1726431A (en) * | 2002-10-21 | 2006-01-25 | 纳米墨水公司 | Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrications |
| CN106098541A (en) * | 2015-04-30 | 2016-11-09 | 三星显示有限公司 | The method manufacturing mask |
| CN105182684A (en) * | 2015-10-20 | 2015-12-23 | 京东方科技集团股份有限公司 | Overhauling method of mask plate |
| CN209641653U (en) * | 2019-02-28 | 2019-11-15 | 长鑫存储技术有限公司 | Alignment mark |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115145108A (en) * | 2022-09-05 | 2022-10-04 | 上海传芯半导体有限公司 | EUV (extreme ultraviolet) grade substrate, EUV mask base plate, EUV mask plate and manufacturing method thereof |
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