CN111061926B - Method for realizing data search in NAND type memory array - Google Patents

Method for realizing data search in NAND type memory array Download PDF

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CN111061926B
CN111061926B CN201911321018.0A CN201911321018A CN111061926B CN 111061926 B CN111061926 B CN 111061926B CN 201911321018 A CN201911321018 A CN 201911321018A CN 111061926 B CN111061926 B CN 111061926B
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CN111061926A (en
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陈冰
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Zhejiang University ZJU
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F16/00—Information retrieval; Database structures therefor; File system structures therefor
    • G06F16/90—Details of database functions independent of the retrieved data types
    • G06F16/903—Querying
    • G06F16/90335—Query processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

The invention discloses a method for realizing data search in a NAND memory array, wherein basic search units of the array are paired transistors with complementary threshold voltages which can be regulated and controlled by an external physical field; the source and drain of two transistors in the unit are connected, and two grids are mutually independent; two grids corresponding to the units in each row are respectively connected and connected to a positive word line and a complementary word line, and complementary data stored in the units are matched and searched by applying complementary voltage signals on the positive word line and the complementary word line; the basic search units in the first row to the last row of each column are sequentially connected in a drain-source mode, the drain electrode of the first row unit is led out to a drain-end bit line, the source electrode of the last row unit is led out to a source-end bit line, whether complementary voltage signals input on the positive word line and the complementary word line are matched with stored complementary data or not is judged through currents of the source-end bit line and the drain-end bit line, and data search is achieved. The invention can realize fast search of data stored in the NAND memory array and realize content addressing.

Description

Method for realizing data search in NAND type memory array
Technical Field
The invention belongs to the technical field of semiconductors and integrated circuits, and particularly relates to a method for realizing data search in a NAND memory array.
Background
On the one hand, NAND Flash (NAND Flash) is currently used as a Non-volatile Memory (NVM) with the largest market size. Has a series of advantages of high capacity, low cost, mature technology and the like. The flash memory is a floating gate type memory, and stores and releases charges by adding a floating gate layer in a gate dielectric layer of a MOS transistor, so that the threshold voltage of the flash memory can be adjusted to store information. Flash erasing changes its threshold voltage by storing and removing electrons in and from the floating gate layer by means such as channel hot electron injection (channel hot electron injection) and F-N tunneling (Fowler-Nordheim electron tunneling). Nand flash memory is widely used in data centers, computers, mobile phones and other fields as a core component of mobile end memories and solid state disks.
On the other hand, the rapid development of information technology has promoted society to enter the "big data" era. As one of the most critical operations for data processing, the speed and energy efficiency of searching data stored in a memory can be optimized to significantly improve the performance of data centers, computers, and mobile terminals. However, the data search in the nand flash memory is implemented by reading the data into the cache and then using a software method, which causes severe power consumption and delay.
Therefore, the data search is directly carried out in the NAND flash memory by a method, and the data search speed and the energy efficiency can be greatly improved.
Disclosure of Invention
The invention aims to provide a method for realizing data search in a NAND type memory array aiming at the defect that the conventional NAND type flash memory cannot directly search data stored in the NAND type flash memory, so that the search speed and the energy efficiency of the data stored in the NAND type flash memory are improved.
The above purpose of the invention is realized by the following technical scheme: a method for realizing data search in NAND type memory array is realized by a special storage mode of data in a memory and a matched memory operation method:
the basic search unit of the array is a pair of transistors, complementary threshold voltages of which can be regulated by an external physical field, and the transistors are marked as a first transistor and a second transistor; the source and drain of two transistors in the unit are connected, and two grids are mutually independent;
the units form a storage array arranged in a matrix form, in the row direction, two grids corresponding to the basic search units in each row are respectively connected and connected to a positive word line and a complementary word line, and complementary data stored in the units are matched and searched by applying complementary voltage signals on the positive word line and the complementary word line;
in the column direction, the first row to the last row of basic search units of each column are sequentially connected in a drain-source mode, the drain electrode of the first row of basic search units is led out to a drain-end bit line, the source electrode of the last row of basic search units is led out to a source-end bit line, and whether complementary voltage signals input on a positive word line and a complementary word line are matched with stored complementary data or not is judged through currents of the source-end bit line and the drain-end bit line, so that data search is achieved.
Further, the threshold voltage V of the first transistor in the cellthpAnd a threshold voltage V of the second transistorthcThe sum of which is a certain voltage value V0。
Further, cell threshold voltage sum V0Usually take VthpOr V is taken as the sum of the minimum threshold voltage and the maximum threshold voltagethcThe sum of the minimum threshold voltage and the maximum threshold voltage.
Further, a voltage V is applied to the positive word lineSLpFor a particular threshold voltage V to be searchedSPlus a regulating voltage Vrp(ii) a On the word complementing lineApplied voltage VSLcIs a cell threshold voltage and V0Minus a particular threshold voltage V to be searchedSPlus a regulating voltage Vrc(ii) a If VSIs equal to VthpThen V isSLpGreater than VthpAnd V isSLcGreater than VthcWhen the basic search unit is conducted; if VSIs not equal to VthpThen V isSLpLess than VthpOr VSLcLess than VthcAt this time, the basic search unit is turned off.
Further, when searching for data stored in the array, a voltage is applied to a positive word line of an nth row
Figure BDA0002327152150000021
The specific threshold voltage to be searched for that row
Figure BDA0002327152150000022
Plus a regulating voltage Vrp(ii) a The voltages applied to the complement lines of the nth row are the cell threshold voltage and V0Minus a particular threshold voltage to be searched
Figure BDA0002327152150000023
Plus a regulating voltage VrcJudging whether the input voltage signals on the positive word line and the complementary word line of each row are completely matched with the two threshold voltages corresponding to all the basic search units of the row according to the current of the reading source end bit line or the reading drain end bit line, and if the current of the mth row is matched with the two threshold voltages corresponding to all the basic search units of the row
Figure BDA0002327152150000024
Greater than a specified value I0The input voltage signals on the positive and complement word lines of each row match the data stored in the column, otherwise there is no match.
Further, a load is added on the source end bit line or the drain end bit line, the load can be a capacitor or a resistor, and whether the input voltage signals on the positive word line and the complementary word line of each row are all matched with the two threshold voltages corresponding to all the basic search units in the column or not is judged according to the voltage on the read loadIf the voltage on the load on the m-th column is matched
Figure BDA0002327152150000031
Greater than a specified value VrlThe input voltage signals on the positive and complementary word lines of each row match the data stored in that column, otherwise they do not match.
Further, if a basic search cell in the array is to be set without affecting the search, the threshold voltage V of the cell is setthpAnd VthcThe minimum value is taken, and the unit is an arbitrary matching unit at the moment, and can be matched for arbitrary search.
Further, if a row in the array is to be set without affecting the search, a voltage signal V is applied to the positive and complementary word lines of the rowm，VmIs generally greater than VthpAnd VthcIs selected, any basic search cells coupled to the row are brought into a conducting state, masking the matching function of these basic search cells.
The beneficial technical effects of the invention are as follows: data search can be directly realized in the NAND flash memory, and the data search speed and energy efficiency can be greatly improved.
Drawings
FIG. 1 shows (a) a pair of transistors with complementary threshold voltages capable of being controlled by an external physical field in a NAND memory device of the present invention, and (b) the current-voltage characteristics thereof;
FIG. 2 shows (a) a basic search cell composed of paired and complementary transistors with threshold voltages controllable by an external physical field in a NAND-type memory according to the present invention, and (b) its operation mode;
FIG. 3 is a schematic diagram of the basic matrix arrangement of search units in the NAND memory array for data search;
FIG. 4 is a schematic diagram of the response of the word line input voltage and the drain current for a NAND memory array.
Detailed Description
The following description is of some of the many possible embodiments of the invention in order to provide a basic understanding of the invention and is not intended to identify key or critical elements of the invention or to delineate the scope of the invention. It is easily understood that according to the technical solution of the present invention, other implementations that can be substituted with each other can be suggested by those skilled in the art without changing the spirit of the present invention. Therefore, the following detailed description and the accompanying drawings are only exemplary illustrations of the technical solutions of the present invention, and should not be construed as limiting or restricting the technical solutions of the present invention.
The method for realizing data search in the NAND memory array provided by the application realizes data search by a special storage mode of data in a memory and a matched memory operation method:
the basic search unit of the array is a pair of transistors, complementary threshold voltages of which can be regulated by an external physical field are marked as a first transistor and a second transistor, and information is stored through the threshold voltages; the source and drain of two transistors in the unit are connected, and two grids are mutually independent;
the units form a storage array arranged in a matrix form, in the row direction, two grids corresponding to the basic search units in each row are respectively connected and connected to a positive word line and a complementary word line, and complementary data stored in the units are matched and searched by applying complementary voltage signals on the positive word line and the complementary word line;
in the column direction, the first row to the last row of basic search units of each column are sequentially connected in a drain-source mode, the drain electrode of the first row of basic search units is led out to a drain-end bit line, the source electrode of the last row of basic search units is led out to a source-end bit line, and whether complementary voltage signals input on a positive word line and a complementary word line are matched with stored complementary data or not is judged through currents of the source-end bit line and the drain-end bit line, so that data search is achieved.
In the embodiment of the present application, the threshold voltage V of the first transistor in the cellthpAnd a threshold voltage V of the second transistorthcThe sum of which is a defined voltage value V0(ii) a Cell threshold voltage sum V0Usually take VthpIs the sum of the minimum threshold voltage and the maximum threshold voltage, or is VthcMinimum threshold voltage ofThe sum of the maximum threshold voltages.
Voltage VS applied to positive word lineLpFor a particular threshold voltage V to be searchedSAdding a regulating voltage Vrp(ii) a Voltage V applied to complement lineSLcSubtract the particular threshold voltage V to be searched for from the cell threshold voltage sum V0SPlus a regulating voltage Vrc(ii) a If VSIs equal to VthpThen V isSLpGreater than VthpAnd V isSLcGreater than VthcWhen the basic search unit is conducted; if VSIs not equal to VthpThen V isSLpLess than VthpOr VSLcLess than VthcAt this time, the basic search unit is turned off.
In the embodiment of the present application, when searching for data stored in the array, a voltage is applied to a positive word line of an nth row
Figure BDA0002327152150000041
The specific threshold voltage to be searched for that row
Figure BDA0002327152150000042
Adding a regulating voltage Vrp(ii) a The voltages applied to the n-th row's complement lines are the cell threshold voltage and V0Minus a particular threshold voltage to be searched
Figure BDA0002327152150000043
Plus a regulating voltage VrcJudging whether the input voltage signals on the positive word line and the complementary word line of each row are completely matched with the two threshold voltages corresponding to all the basic search units of the row according to the current of the reading source end bit line or the reading drain end bit line, and if the current of the mth row is matched with the two threshold voltages corresponding to all the basic search units of the row
Figure BDA0002327152150000044
Greater than a specified value I0The input voltage signals on the positive and complement word lines of each row match the data stored in the column, otherwise there is no match.
In addition, a negative bit line can be added to the source terminal bit line or the drain terminal bit lineThe load can be a capacitor or a resistor, whether the input voltage signals on the positive word line and the complementary word line of each row are completely matched with the two threshold voltages corresponding to all the basic search units of the row is judged according to the voltage on the read load, and if the voltage on the load on the m-th row is completely matched with the voltage on the load
Figure BDA0002327152150000045
Greater than a specified value VrlThe input voltage signals on the positive and complement word lines of each row match the data stored in the column, otherwise there is no match.
In the embodiment of the application, if a certain basic search unit in the array is to be set without influence on the search, the threshold voltage V of the unit is setthpAnd VthcThe minimum value is taken, and the unit is an arbitrary matching unit at the moment, and can be matched for arbitrary search. If a row in the array is to be set without affecting the search, a voltage signal V is applied to the positive and complementary word lines of the rowm，VmIs generally greater than VthpAnd VthcIs selected, any basic search cells coupled to the row are brought into a conducting state, masking the matching function of these basic search cells.
In a specific application, referring to fig. 1, the paired and complementary transistors with threshold voltages controllable by an external physical field in the nand-type memory array are floating gate transistors, and the device structure thereof is as shown in fig. 1(a), which is formed by inserting a floating gate layer into a gate dielectric of a conventional MOS transistor, 101 is a substrate, 102 is a source, 103 is a drain, 104 is a gate, 105 is a floating gate layer, and the threshold voltage is VthThe floating gate transistor can store and remove electrons on the floating gate layer to change the threshold voltage. FIG. 1(b) shows the source-drain current I at different threshold voltages and different gate voltagesdIn the floating gate transistor of the present embodiment, the threshold voltage can be switched between 0V, 1V, 2V, and 3V under the application of a specific operating voltage.
The basic search cell structure and circuit of NAND memory array is shown in FIG. 2(a), where the source of the first floating gate transistor 201 is connected to the drain of the second floating gate transistor 202, 203 is the drain of the floating gate transistor 201, 204 is the floating gate transistorThe source of the transistor 202, 205 is the gate of the floating gate transistor 201 connected to the positive word line, and 206 is the gate of the floating gate transistor 202 connected to the complementary word line; vthpIs the threshold voltage, V, of the floating gate transistor 201thcIs the threshold voltage, V, of the floating gate transistor 202thpAnd VthcSum V0Is a constant; v0Usually take VthpOr VthcThe sum of the minimum threshold voltage and the maximum threshold voltage. In this embodiment VthpCan be 0V, 1V, 2V, 3V, VthcCan be 3V, 2V, 1V, 0V, or V0Set to 3V.
Voltage V applied to positive word lineSLpFor a particular threshold voltage V to be searchedSPlus a regulating voltage Vrp(ii) a Voltage V applied to complement lineSLcSubtract the particular threshold voltage V to be searched for from the cell threshold voltage sum V0SPlus a regulating voltage Vrc(ii) a If VSIs equal to VthpThen V isSLpGreater than VthpAnd V isSLcGreater than VthcWhen the basic search unit is turned on, if VSIs not equal to VthpThen V isSLpLess than VthpOr VSLcLess than VthcAt this time, the basic search unit is turned off.
Threshold V of floating gate transistor 201 in this embodimentthpIs 2V, then VthcIs 1V, and the voltage V is regulated and controlledrcWhen set at 0.5V, 205 were applied with different voltages VSLpAt a corresponding voltage V on 206SLcAnd the current I flowing between the basic search cells 203 and 204uAs shown in FIG. 2 (b); when V isSLpWhen it is equal to 2.5V, VSIs 2V, in this case VSIs equal to VthpThe basic search cell is turned on, showing a current IuA peak occurs.
FIG. 3 shows a matrix array of basic search cells, wherein in the row direction, the gates of the first floating gate transistors of all the basic search cells in the nth row are connected and then connected to the positive word line 31n, and the gates of the second floating gate transistors of all the basic search cells are connected and then connected to the complementary word line 32nThe positive word lines are 311 and 312 respectively, and the complementary word lines are 321 and 322 respectively; in the column direction, all the basic search units in the first row to the last row of each column are sequentially connected in drain and source, the drain of the first row basic search unit in the mth column is led out to a drain terminal bit line 33m, and the source of the last row basic search unit is led out to a source terminal bit line 34 m. Voltage applied to positive word line of nth row when searching for data stored in array
Figure BDA0002327152150000061
The specific threshold voltage to be searched for that row
Figure BDA0002327152150000062
Plus a regulating voltage Vrp(ii) a The voltages applied to the complement lines are the cell threshold voltage and V0Minus a particular threshold voltage to be searched
Figure BDA0002327152150000063
Plus a regulating voltage VrcFinally, according to the current of reading source end bit line or drain end bit line, judging whether the input voltage signals on positive word line and complementary word line of each row are matched with two threshold voltages corresponding to all basic search units of said row, if the current of m column is matched with two threshold voltages corresponding to all basic search units of said row
Figure BDA0002327152150000064
Greater than a specified value I0If the input voltage signals on the positive word line and the complementary word line of each row are matched with the data stored in the row, otherwise, the input voltage signals are not matched;
in addition, a load may be added to the source end bit line or the drain end bit line, where the load may be a capacitor or a resistor, and in this embodiment, loads 351, 352, 353, and 354 are respectively set on the source end bit line, and according to a voltage on the read load, it is determined whether input voltage signals on the positive word line and the complementary word line of each row match with two threshold voltages corresponding to all basic search units in the row, and if a voltage on the load in the mth row matches with a voltage on the load, the voltage on the load in the mth row is equal to or greater than a threshold voltage of all basic search units in the row
Figure BDA00023271521500000610
Greater than a specified value VrlThe input voltage signals on the positive and complement word lines of each row match the data stored in the column, otherwise there is no match.
In addition, if a basic search cell in the array is to be set without affecting the search, the cell threshold voltage V is setthpAnd VthcThe minimum value is taken, and the unit is an arbitrary matching unit at the moment, and can be matched for arbitrary search.
If a row in the array is to be set without affecting the search, a voltage signal V is applied to the positive and complementary word lines of the rowm，VmIs generally greater than VthpAnd VthcIs selected, any basic search cells coupled to the row are brought into a conducting state, masking the matching function of these basic search cells.
Based on the foregoing search method, the process of searching in the nand-type memory array in the present embodiment is as follows: first, pairs of searchable data are stored in the array, with the threshold for the cells in row n and column m being
Figure BDA0002327152150000065
And with
Figure BDA0002327152150000066
The threshold voltages of the cells in the array in this embodiment are shown in FIG. 3; then, a voltage is applied to the positive word line and the complementary word line of the nth row
Figure BDA0002327152150000067
And
Figure BDA0002327152150000068
searching the data stored in each column; finally, the current on the drain terminal bit line of each row is read, if the read current of the mth row
Figure BDA0002327152150000069
Greater than a specific value I0Then input messageAn example of the response of the corresponding word line input voltage to drain current is shown in FIG. 4, with the sign matching the stored data for that column, and otherwise not matching.
The foregoing is only a preferred embodiment of the present invention, and although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make many possible variations and modifications to the disclosed solution, or to modify equivalent embodiments, without departing from the scope of the solution, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.

Claims (1)

1. A method of performing a data search in a nand-type memory array, comprising:
the basic search unit of the NAND memory array is a pair of transistors, complementary threshold voltages of which can be regulated by an external physical field, and the transistors are marked as a first transistor and a second transistor; the source and drain of two transistors in the unit are connected, and two grids are mutually independent; threshold voltage V of first transistor in cellthpAnd a threshold voltage V of the second transistorthcThe sum of which is a defined voltage value V0(ii) a Cell threshold voltage sum V0Get VthpIs the sum of the minimum threshold voltage and the maximum threshold voltage, or is VthcThe sum of the minimum threshold voltage and the maximum threshold voltage;
in the row direction of the array, two grids corresponding to the basic search units in each row are respectively connected and connected to a positive word line and a complementary word line, and complementary data stored in the units are matched and searched by applying complementary voltage signals on the positive word line and the complementary word line; if a row in the array is to be set without affecting the search, a voltage signal V is applied to the positive and complementary word lines of the rowm，VmGreater than VthpAnd VthcMaximum value of (1), leadAny basic search unit connected to the row is in a conducting state, and the matching function of the basic search units is shielded;
voltage V applied to positive word lineSLpFor a particular threshold voltage V to be searchedSPlus a regulating voltage Vrp(ii) a Voltage V applied to complement lineSLcIs a cell threshold voltage and V0Minus a particular threshold voltage V to be searchedSPlus a regulating voltage Vrc(ii) a If VSIs equal to VthpThen V isSLpGreater than VthpAnd V isSLcGreater than VthcWhen the basic search unit is conducted; if VSIs not equal to VthpThen V isSLpLess than VthpOr VSLcLess than VthcWhen the basic search unit is turned off;
in the column direction of the array, the first row to the last row of basic search units of each column are sequentially connected with a drain and a source, the drain of the first row of basic search units is led out to a drain terminal bit line, the source of the last row of basic search units is led out to a source terminal bit line, and whether complementary voltage signals input on a positive word line and a complementary word line are matched with stored complementary data or not is judged through the currents of the source terminal bit line and the drain terminal bit line, so that data search is realized;
voltage applied to positive word line of nth row when searching for data stored in array
Figure FDA0003634115040000011
The specific threshold voltage to be searched for that row
Figure FDA0003634115040000012
Plus a regulating voltage Vrp(ii) a The voltages applied to the complement lines of the nth row are the cell threshold voltage and V0Minus a particular threshold voltage to be searched
Figure FDA0003634115040000013
Plus a regulating voltage Vrc(ii) a According to the current of the bit line at the source end or the bit line at the drain end of the reading, the positive word line and the negative word line of each row are judgedWhether the input voltage signal on the complementary word line is completely matched with two threshold voltages corresponding to all basic search units of the column, if the current of the mth column
Figure FDA0003634115040000014
Greater than a specified value I0If the input voltage signals on the positive word line and the complementary word line of each row are matched with the data stored in the row, otherwise, the input voltage signals are not matched;
adding a load on a source end bit line or a drain end bit line, judging whether input voltage signals on a positive word line and a complementary word line of each row are completely matched with two threshold voltages corresponding to all basic search units of the row according to the voltage on the read load, and if the voltage on the load on the m-th row is completely matched with the two threshold voltages corresponding to all the basic search units of the row
Figure FDA0003634115040000021
Greater than a specified value VrlIf the input voltage signals on the positive word line and the complementary word line of each row are matched with the data stored in the row, otherwise, the input voltage signals are not matched;
if a certain basic search unit in the array is set to have no influence on the search, the threshold voltage V of the unit is setthpAnd VthcThe minimum value is taken, and the unit is an arbitrary matching unit at the moment, and can be matched for arbitrary search.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101064194A (en) * 2006-04-25 2007-10-31 三菱电机株式会社 Shift register circuit and image display apparatus equipped with the same
CN103915117A (en) * 2013-01-09 2014-07-09 旺宏电子股份有限公司 P-channel 3d memory array

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CN101064194A (en) * 2006-04-25 2007-10-31 三菱电机株式会社 Shift register circuit and image display apparatus equipped with the same
CN103915117A (en) * 2013-01-09 2014-07-09 旺宏电子股份有限公司 P-channel 3d memory array

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