CN111058016B - Electrode mechanism of semiconductor process furnace and semiconductor process furnace - Google Patents
Electrode mechanism of semiconductor process furnace and semiconductor process furnace Download PDFInfo
- Publication number
- CN111058016B CN111058016B CN201911368034.5A CN201911368034A CN111058016B CN 111058016 B CN111058016 B CN 111058016B CN 201911368034 A CN201911368034 A CN 201911368034A CN 111058016 B CN111058016 B CN 111058016B
- Authority
- CN
- China
- Prior art keywords
- cantilever
- pipe
- electrode
- insulating
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
The invention provides an electrode mechanism of a semiconductor process furnace and the semiconductor process furnace, wherein the electrode mechanism of the semiconductor process furnace comprises a connecting plate, a first electrode assembly, a second electrode assembly, a first conducting seat, a second conducting seat and a cantilever assembly, wherein the connecting plate is connected with a furnace door of the semiconductor process furnace; the cantilever assembly penetrates through the connecting plate and the furnace door to extend towards the direction of the furnace body of the semiconductor process furnace; the first conducting seat and the second conducting seat are arranged on the cantilever assembly and are respectively and electrically connected with two end parts of a wafer boat of the semiconductor process furnace in a separable way; the first electrode assembly penetrates through the cantilever assembly and is electrically connected with the first conducting seat; the second electrode group assembly penetrates through the connecting plate and the furnace door to be electrically connected with the second conduction seat. The electrode mechanism of the semiconductor process furnace and the semiconductor process furnace provided by the invention can improve the process result, reduce the process time, increase the equipment productivity and reduce the processing cost.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to an electrode mechanism of a semiconductor process furnace and the semiconductor process furnace.
Background
In the actual production process of the crystalline silicon battery, the preparation of the anti-reflective film and/or the passivation film is generally realized by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method. In a long period of time in the future, the PECVD still provides important guarantee for the whole crystalline silicon solar cell industry by virtue of its long-term accumulated process experience and superior coating performance. The radio frequency system is an important component of the tubular PECVD, and the discharge mode of the radio frequency system plays a crucial role in influencing the process result of the silicon wafer.
At present, a crystal boat is conveyed to a reaction chamber in a furnace by a pushing device and is placed at a position connected with a radio frequency electrode, the radio frequency electrode is inserted into an electrode hole on the tail part of the crystal boat from the furnace tail, after the radio frequency electrode is inserted into the electrode hole, the pushing device pushes the crystal boat to slowly descend and continuously and slowly advance into a furnace door until a cantilever door and a flange at a furnace opening are well sealed. The discharge mode is that the radio frequency positive and negative electrodes discharge at the tail part of the wafer boat at the same time, and the current is transmitted between the silicon wafers of the wafer boat from back to front. After the process is finished, the radio-frequency electrode is pulled out from the electrode hole on the tail part of the wafer boat, and then the wafer boat is moved out of the reaction chamber.
However, since the rf electrode pair is inserted into the tail of the boat, the current flows from the tail to the head of the boat, which results in poor uniformity and passivation of the silicon wafers in the boat. Moreover, because the radio-frequency electrode pair is inserted on the wafer boat, when the wafer boat pushed by the pushing device descends slowly, the wafer boat can press down the electrode, so that the electrode and the wafer boat are not well inserted, and the electrode tip is burnt. Moreover, when the boat is loaded and unloaded by each process, the electrodes need to be plugged and pulled out, so that the service lives of the boat and the electrodes are influenced, the process repeatability is not facilitated, the process time is longer, the equipment productivity is lower, and the processing cost is higher.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides an electrode mechanism of a semiconductor process furnace and the semiconductor process furnace, which can improve the process result, reduce the process time, increase the equipment productivity and reduce the processing cost.
The invention provides an electrode mechanism of a semiconductor process furnace, which comprises: a connecting plate, a first electrode assembly, a second electrode assembly, a first conductive mount, a second conductive mount, and a cantilever assembly, wherein,
the connecting plate is connected with a furnace door of the semiconductor process furnace;
the cantilever assembly penetrates through the connecting plate and the furnace door and extends towards the direction of the furnace body of the semiconductor process furnace;
the first conduction seat and the second conduction seat are arranged on the cantilever assembly and are respectively and electrically connected with two ends of a wafer boat of the semiconductor process furnace in a separable way;
the first electrode assembly penetrates through the cantilever assembly and is electrically connected with the first conducting seat;
the second electrode assembly penetrates through the connecting plate and the furnace door to be electrically connected with the second conduction seat.
Preferably, the cantilever assembly comprises a cantilever tube, a support tube, a first insulating sleeve, a second insulating sleeve, and a fixing sleeve, wherein,
the cantilever pipe penetrates through the connecting plate and the furnace door, the supporting pipe is axially connected with the cantilever pipe and extends towards the furnace body, and the first electrode assembly penetrates through the cantilever pipe and the supporting pipe;
the fixed sleeve is sleeved at the joint of the cantilever pipe and the supporting pipe;
the first conducting seat is arranged on the supporting tube, and the first insulating sleeve is sleeved at the part of the supporting tube corresponding to the first conducting seat;
the second conducting seat is arranged on the supporting tube, and the second insulating sleeve is sleeved on the supporting tube and the part corresponding to the second conducting seat.
Preferably, the cantilever assembly further includes a first insulating sealing member disposed at an end of the cantilever tube not connected to the support tube, the first electrode assembly extends into the cantilever tube through the first insulating sealing member, and the first insulating sealing member is hermetically connected to the cantilever tube and the first electrode assembly.
Preferably, the first insulating sealing member includes: an insulating sleeve, an insulating flange seat, a first sealing ring, a second sealing ring and a connecting ring body, wherein,
the insulating flange seat is arranged at one end of the cantilever pipe, which is not connected with the supporting pipe, and comprises a main body part and a clamping table part, wherein the main body part extends into the cantilever pipe, and the clamping table part is clamped at the port of the cantilever pipe;
the insulating sleeve is arranged at one end, away from the cantilever pipe, of the insulating flange seat and abuts against the insulating flange seat, and a first clamping table is arranged on the outer side wall of the insulating sleeve;
the first sealing ring is arranged between the insulating sleeve and the insulating flange seat, and the second sealing ring is arranged between the insulating flange seat and the cantilever pipe;
the connecting ring body is sleeved on the outer sides of the insulating sleeve and the clamping table part, a second clamping table matched with the first clamping table is arranged on the inner side wall of the connecting ring body, and the connecting ring body is connected with the cantilever pipe so as to tightly press the insulating sleeve, the insulating flange seat, the first sealing ring and the second sealing ring;
the first electrode assembly penetrates through the insulating sleeve and the insulating flange seat and extends into the cantilever pipe.
Preferably, the cantilever assembly further comprises: and the first insulating baffle ring is arranged at one end of the connecting ring body, which is far away from the cantilever pipe.
Preferably, the first electrode assembly comprises a first electrode rod, a first insulating sleeve sleeved on the first electrode rod, wherein,
the first electrode rod comprises a first rod section and a second rod section, the first insulating sleeve comprises a first pipe section and a second pipe section, the first pipe section is sleeved on the first rod section, and the second pipe section is sleeved on the second rod section; said first and second pole segments being interconnected; the first pipe section is provided with an insertion part, and the second pipe section is partially inserted into the insertion part, or the second pipe section is provided with an insertion part, and the first pipe section is partially inserted into the insertion part;
the first electrode assembly further comprises a locking member sleeved outside the insertion part and used for locking the joint of the first pipe section and the second pipe section.
Preferably, the second electrode assembly includes a second electrode rod and a second insulating sleeve sleeved on the second electrode rod.
Preferably, the method further comprises the following steps: the electrode connecting plate is arranged on one side, away from the furnace door, of the first conducting seat, and the first electrode assembly is electrically connected with the first conducting seat through the electrode connecting plate.
Preferably, the method further comprises the following steps: the first insulating sleeve and the second insulating sleeve are provided with limiting parts, and the limiting parts are used for positioning the first insulating sleeve and the second insulating sleeve so as to position the first conducting base and the second conducting base.
The invention also provides a semiconductor process furnace, which comprises the electrode mechanism.
The invention has the following beneficial effects:
the electrode mechanism of the semiconductor process furnace provided by the invention conducts electricity to the first conducting seat through the first electrode assembly electrically connected with the first conducting seat, conducts electricity to the second conducting seat through the second electrode assembly electrically connected with the second conducting seat, and in the semiconductor process, the first conducting seat and the second conducting seat are respectively and electrically connected with two end parts of a boat of the semiconductor process furnace, so that the electricity can be respectively conducted to the two end parts of the boat from the first conducting seat and the second conducting seat, and the current can flow from one end part to the other end part and simultaneously flow from the other end part to one end part between the two end parts of the boat, thereby improving the uniformity and the passivation effect of wafers in the boat after processing, and further improving the process result. In addition, because the first conducting seat and the second conducting seat which are respectively electrically connected with the first electrode assembly and the second electrode assembly are arranged on the cantilever assembly, the first electrode assembly and the second electrode assembly do not need to be plugged and pulled out in the moving process of the wafer boat, namely, when the wafer boat moves into the semiconductor process furnace body or moves out of the semiconductor process furnace body, and the first electrode assembly and the second electrode assembly are not extruded in the moving process of the wafer boat, so that the service lives of the wafer boat, the first electrode assembly and the second electrode assembly can be prolonged, the process repeatability is improved, the process time is further reduced, the equipment productivity is increased, and the process cost is reduced.
The semiconductor process furnace provided by the invention has the advantages that the process result can be improved, the process time is reduced, the equipment productivity is increased, and the processing cost is reduced by means of the electrode mechanism of the semiconductor process furnace provided by the invention.
Drawings
Fig. 1 is a schematic structural diagram of an electrode mechanism of a semiconductor process furnace according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating a relative position of an electrode mechanism and a wafer boat of a semiconductor processing furnace according to an embodiment of the present invention;
fig. 3 is an enlarged schematic structural view of a first insulating sealing member in an electrode mechanism of a semiconductor process furnace according to an embodiment of the present invention;
FIG. 4 is an enlarged schematic view of the area A in FIG. 1;
FIG. 5 is a schematic structural view of a cantilever tube, a connecting plate and an introducing passage in an electrode mechanism of a semiconductor process furnace according to an embodiment of the present invention;
fig. 6 is a schematic structural view of an electrode connecting plate in an electrode mechanism of a semiconductor process furnace according to an embodiment of the present invention;
description of reference numerals:
1-a wafer boat; 11-boat legs; 211-a first pole segment; 212-a second pole segment; 22-a second electrode rod; 311-a first conductive mount; 312-a second conductive mount; 321-a cantilever tube; 322-support tube; 323-a fixed sleeve; 331-a first insulating sleeve; 332-a second insulating sleeve; 341-a first tube segment; 342-a second tube section; 35-a first insulating barrier ring; 36-a second insulating barrier ring; 37-a locking member; 38-a second insulating sleeve; 41-a first insulating seal member; 411-an insulating sleeve; 412-insulating flange seat; 413-a first sealing ring; 414-a second seal ring; 415-a connecting loop; 42-a second insulating sealing member; 5-an electrode connection post; 6-an electrode connection plate; 61-a first connection hole; 62-a second connection hole; 63-a vent hole; 71-a connecting plate; 72-an introduction channel; 8-a limiting member; 9-a limiting part.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the electrode mechanism of the semiconductor processing furnace and the semiconductor processing furnace provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 6, the present embodiment provides an electrode mechanism of a semiconductor process furnace, including: the connecting plate 71, the first electrode assembly, the second electrode assembly, the first conducting seat 311, the second conducting seat 312 and the cantilever assembly, wherein the connecting plate 71 is connected with a furnace door of the semiconductor process furnace; the cantilever assembly passes through the connecting plate 71 and the furnace door and extends towards the direction of the furnace body of the semiconductor process furnace; the first conductive seat 311 and the second conductive seat 312 are arranged on the cantilever assembly and are respectively and electrically connected with two ends of the wafer boat 1 of the semiconductor process furnace in a separable manner; the first electrode assembly is arranged in the cantilever assembly in a penetrating way and is electrically connected with the first conducting seat 311; the second electrode assembly is electrically connected to the second conductive socket 312 through the connection plate 71 and the door.
In the electrode mechanism of the semiconductor process furnace provided by this embodiment, the first electrode assembly electrically connected to the first conductive base 311 conducts electricity to the first conductive base 311, and the second electrode assembly electrically connected to the second conductive base 312 conducts electricity to the second conductive base 312, in the semiconductor process, the first conductive base 311 and the second conductive base 312 are electrically connected to two ends of the boat 1 of the semiconductor process furnace, respectively, so that electric energy can be conducted to two ends of the boat 1 from the first conductive base 311 and the second conductive base 312, respectively, so that electric current can flow between the two ends of the boat 1 from one end to the other end, and simultaneously flow from the other end to one end, thereby improving uniformity of wafers in the boat 1 after processing, and passivation effect, and further improving process results. Moreover, since the first and second conductive holders 311 and 312 electrically connected to the first and second electrode assemblies, respectively, are disposed on the cantilever assemblies, the first and second electrode assemblies do not need to be inserted and pulled out during the movement of the boat 1, i.e., when the boat 1 is moved into or out of the semiconductor process furnace, and the first and second electrode assemblies are not extruded during the movement of the boat 1, the service lives of the boat 1, the first and second electrode assemblies can be prolonged, the process repeatability can be improved, the process time can be reduced, the equipment productivity can be increased, and the process cost can be reduced.
In this embodiment, the cantilever assembly is connected to the semiconductor process furnace body through the pushing assembly, when the first conductive seat 311 and the second conductive seat 312 on the cantilever assembly do not carry the boat 1, the pushing assembly pushes the cantilever assembly to the furnace door of the semiconductor process furnace body, so that the boat 1 is placed on the first conductive seat 311 and the second conductive seat 312, and after the boat 1 is carried by the first conductive seat 311 and the second conductive seat 312, the pushing assembly pushes the cantilever assembly to the inside of the semiconductor process furnace body, so as to perform the semiconductor processing process on the wafers in the boat 1. However, the manner of mounting the cantilever assembly to the semiconductor process furnace is not limited thereto. The cantilever assembly may also be fixed in a semiconductor processing furnace, and the boat 1 may be placed on the first and second conductive seats 311 and 312 of the cantilever assembly by a robot. Regardless of the manner of mounting the cantilever assembly to the semiconductor process furnace, the cantilever assembly does not need to be separated from the first conductive mount 311 and the second conductive mount 312, and thus the first electrode assembly does not need to be disconnected from the first conductive mount 311 and the second electrode assembly does not need to be disconnected from the second conductive mount 312.
In a preferred embodiment, the first conductive seat 311 and the second conductive seat 312 may be made of graphite material to improve the electrical conductivity of the first conductive seat 311 and the second conductive seat 312, and the boat 1 may also be made of graphite material to improve the electrical conductivity.
In this embodiment, the connection plate 71 may be provided with an introduction passage 72, and the second electrode assembly passes through the introduction passage 72 and is electrically connected to the second conductive seat 312. When the semiconductor processing technology is carried out, the furnace door of the semiconductor processing furnace body is closed, and the connecting plate 71 and the positions, penetrated by other parts, of the furnace door are provided with sealing parts for sealing, so that a sealed space can be formed inside the semiconductor processing furnace body, and the vacuum sealing requirement of the semiconductor processing technology can be met.
In this embodiment, the connection plate 71 and the introduction passage 72 may be made of stainless steel, and both may be formed by welding. However, the material for forming the connection plate 71 and the introduction passage 72 and the connection manner are not limited thereto.
In a preferred embodiment of the present invention, the cantilever assembly may include a cantilever tube 321, a support tube 322, a first insulating sleeve 331, a second insulating sleeve 332, and a fixing sleeve 323, wherein the cantilever tube 321 passes through the connection plate 71 and the oven door, the support tube 322 is axially connected to the cantilever tube 321 and extends toward the oven body, and the first electrode assembly is disposed in the cantilever tube 321 and the support tube 322; the fixed sleeve 323 is sleeved at the joint of the cantilever pipe 321 and the support pipe 322; the first conductive seat 311 is disposed on the supporting tube 322, and the first insulating sleeve 331 is sleeved on a portion of the supporting tube 322 corresponding to the first conductive seat 311; the second conductive seat 312 is disposed on the supporting tube 322, and the second insulating sleeve 332 is sleeved on a portion of the supporting tube 322 corresponding to the second conductive seat 312.
Specifically, through holes for the cantilever pipes 321 to pass through may be provided on the connection plate 71 and the oven door, and the cantilever pipes 321 pass through the connection plate 71 and the through holes on the oven door to pass through the connection plate 71 and the oven door. One end of the supporting tube 322 is axially connected to the cantilever tube 321, the other end extends toward the furnace body, a first through hole and a second through hole for the other end of the supporting tube 322 to pass through may be respectively disposed on the first conducting base 311 and the second conducting base 312, the other end of the supporting tube 322 passes through the first through hole on the first conducting base 311 and the second through hole on the second conducting base 312, so that the other end of the supporting tube 322 passes through the first conducting base 311 and the second conducting base 312 to support the first conducting base 311 and the second conducting base 312. The first insulating sleeve 331 is inserted into the first through hole and sleeved at the portion of the support tube 322 corresponding to the first conductive seat 311, the second insulating sleeve 332 is inserted into the second through hole and arranged at the portion of the support tube 322 corresponding to the second conductive seat 312, so that by means of the insulating ability of the first insulating sleeve 331 and the second insulating sleeve 332, the current on the first conductive seat 311 and the second conductive seat 312 is prevented from creeping onto the support tube 322, so as to realize the insulation between the support tube 322 and the first conductive seat 311 and the second conductive seat 312, and the current on the first conductive seat 311 and the second conductive seat 312 is prevented from being transmitted onto the wafer boat 1 through the support tube 322, thereby preventing the current from generating turbulence on the portion of the wafer boat 1 corresponding to the support tube 322, further improving the uniformity and passivation effect of the wafers in the wafer boat 1 after processing, and further improving the process result. The first electrode assembly is inserted into the cantilever pipe 321 and the support pipe 322, and when the process is performed, one end of the first electrode assembly is located outside the oven door and connected to the power supply or a lead connected to the power supply, and the other end of the first electrode assembly is located inside the oven door and in the support pipe 322 and electrically connected to the first conductive seat 311, so that the current can be guided from the outside of the oven door of the semiconductor process oven body to the first conductive seat 311 inside the semiconductor process oven body. The fixing sleeve 323 is sleeved at the joint of the cantilever pipe 321 and the support pipe 322, so that the structural rigidity and stability of the cantilever assembly are improved on the whole, and the current introduced by the first electrode assembly can be prevented from diffusing into the inner space of the semiconductor process furnace body through the cantilever pipe 321 to influence the processing process of the wafer.
In this embodiment, the cantilever pipe 321 may be made of stainless steel, and may be connected to the connection plate 71 by welding. However, the material for the cantilever pipe 321 and the connection method with the connection plate 71 are not limited thereto.
In this embodiment, the support tube 322 may be made of silicon carbide to improve the supporting strength of the support tube 322.
In this embodiment, the cantilever assembly further includes a first insulating sealing member 41 disposed at an end of the cantilever tube 321 not connected to the support tube 322, the first electrode assembly extends into the cantilever tube 321 through the first insulating sealing member 41, and the first insulating sealing member 41 is hermetically connected to the cantilever tube 321 and the first electrode assembly. The first insulating sealing member 41 is connected to the cantilever tube 321 and the first electrode assembly in a sealing manner, so as to prevent outside air from entering the interior of the semiconductor process furnace body through the cantilever tube 321, thereby satisfying the vacuum sealing requirement of the semiconductor processing process, and the insulating capability of the first insulating sealing member 41 can prevent current carried by the first electrode assembly from creeping onto the cantilever tube 321.
As shown in fig. 3, in a preferred embodiment of the present invention, the first insulating sealing member 41 includes: the insulating sleeve 411, the insulating flange seat 412, the first sealing ring 413, the second sealing ring 414 and the connection ring 415, wherein the insulating flange seat 412 is arranged at one end of the cantilever pipe 321 which is not connected with the support pipe 322, the insulating flange seat 412 comprises a main body part and a clamping table part, the main body part extends into the cantilever pipe 321, and the clamping table part is clamped at the port of the cantilever pipe 321; the insulating sleeve 411 is arranged at one end of the insulating flange seat 412 far away from the cantilever pipe 321 and abuts against the insulating flange seat 412, and a first clamping table is arranged on the outer side wall of the insulating sleeve 411; the first sealing ring 413 is arranged between the insulating sleeve 411 and the insulating flange seat 412, and the second sealing ring 414 is arranged between the insulating flange seat 412 and the cantilever pipe 321; the connecting ring 415 is sleeved on the outer sides of the insulating sleeve 411 and the clamping table portion, a second clamping table matched with the first clamping table is arranged on the inner side wall of the connecting ring 415, and the connecting ring 415 is connected with the cantilever pipe 321 to press the insulating sleeve 411, the insulating flange seat 412, the first sealing ring 413 and the second sealing ring 414; the first electrode assembly extends into the cantilever tube 321 through the insulating sleeve 411 and the insulating flange seat 412.
Specifically, the main body of the insulating flange seat 412 extends into the cantilever pipe 321, so that the current carried by the first electrode assembly is prevented from creeping onto the cantilever pipe 321 from the portion of the first electrode assembly extending into the cantilever pipe 321 by the insulating capability of the main body of the insulating flange seat 412, and the clamping table portion of the insulating flange seat 412 is clamped at the port of the cantilever pipe 321, so that the current carried by the first electrode assembly is prevented from creeping onto the cantilever pipe 321 through the port of the cantilever pipe 321 by the insulating capability of the clamping table portion of the insulating flange seat 412, and thus the current carried by the first electrode assembly is prevented from creeping onto the cantilever pipe 321. The insulating sleeve 411 is arranged at one end of the insulating flange seat 412 far away from the cantilever pipe 321 and abuts against the insulating flange seat 412, the connecting ring 415 is sleeved outside the insulating sleeve 411 and the clamping table portion and is connected with the cantilever pipe 321, a second clamping table matched with a first clamping table arranged on the outer side wall of the insulating sleeve 411 is arranged on the inner side wall of the connecting ring 415, the insulating sleeve 411 and the insulating flange seat 412 can be pressed, and current carried by the first electrode assembly is avoided by means of the insulating capacity of the insulating sleeve 411, and creepage is achieved on the connecting ring 415.
A first sealing ring 413 is arranged between the insulating sleeve 411 and the insulating flange seat 412, and a gap between the insulating flange seat 412 and the insulating sleeve 411 is sealed by the first sealing ring 413, so that external air is prevented from entering a semiconductor furnace body from the gap between the insulating flange seat 412 and the insulating sleeve 411, and the vacuum sealing requirement of a semiconductor processing technology is met. A second sealing ring 414 is disposed between the insulating flange seat 412 and the cantilever pipe 321, and the second sealing ring 414 is used to seal a gap between the insulating flange seat 412 and the cantilever pipe 321, so as to prevent external air from entering the semiconductor furnace body from the gap between the insulating flange seat 412 and the cantilever pipe 321, thereby meeting the vacuum sealing requirement of the semiconductor processing technology.
In a preferred embodiment of the present invention, the cantilever assembly may further include: a first insulating retainer ring 35 is disposed at an end of connection ring 415 remote from cantilever tube 321. With the aid of the insulating capability of the first insulating barrier ring 35, the current carried by the first electrode assembly is prevented from creeping onto the cantilever tube 321 through the end face of the connection ring 415.
Alternatively, first insulating barrier ring 35, connection ring 415, and cantilever tube 321 may be bolted together.
In this embodiment, the material for manufacturing the first insulating blocking ring 35 and the insulating flange seat 412 includes polyetheretherketone, which has a certain toughness, so that the first insulating blocking ring 35 can bear a stress when being connected to the connection ring 415, and the insulating flange seat 412 can bear a pressing force generated by the connection ring 415. However, the material for manufacturing the first insulating collar 35 and the insulating flange seat 412 is not limited to this, and may be other insulating materials having toughness. In the present embodiment, although ceramics may be used as the material for forming the other insulating member, the present invention is not limited thereto, and other insulating materials may be used.
In a preferred embodiment of the present invention, the first electrode assembly includes a first electrode rod, and a first insulating sleeve sleeved on the first electrode rod, wherein the first electrode rod includes a first rod section 211 and a second rod section 212, the first insulating sleeve includes a first pipe section 341 and a second pipe section 342, the first pipe section 341 is sleeved on the first rod section 211, and the second pipe section 342 is sleeved on the second rod section 212; the first segment 211 and the second segment 212 are connected to each other; the first pipe segment 341 is provided with an insertion portion into which the second pipe segment 342 is partially inserted, or the second pipe segment 342 is provided with an insertion portion into which the first pipe segment 341 is partially inserted; the first electrode assembly further includes a locker 37 fitted to the outside of the insertion portion for locking the connection of the first pipe segment 341 and the second pipe segment 342.
The first electrode rod penetrates through the cantilever assembly and is electrically connected with the first conducting seat 311, so that current is guided to the first conducting seat 311, the first insulating sleeve is sleeved on the first electrode rod, the first electrode rod and the cantilever assembly are insulated by means of the insulating capacity of the first insulating sleeve, the current carried by the first electrode rod is prevented from creeping to the cantilever assembly, the current is prevented from diffusing to the inside of the semiconductor process furnace through the cantilever assembly, and the influence on the processing of wafers in the wafer boat 1 is avoided.
Because the cantilever assembly passes through the connecting plate 71 and the furnace door and extends towards the direction of the furnace body of the semiconductor process furnace, the length of the first electrode rod is longer, if the first electrode rod is a complete rod, the first electrode rod is easy to break, and therefore the first electrode rod is divided into the first rod section 211 and the second rod section 212, the first electrode rod can be prevented from being damaged, the strength of the first electrode assembly is improved, and the stability and the durability of an electrode mechanism of the electric semiconductor process furnace are improved. Similarly, the first insulating sleeve is divided into a first pipe segment 341 and a second pipe segment 342, which are respectively sleeved on the first rod segment 211 and the second rod segment 212, and because the first insulating sleeve is sleeved on the first electrode assembly, the length of the first insulating sleeve is longer, if the first insulating sleeve is a complete sleeve, the first insulating sleeve is easy to break, therefore, the first insulating sleeve is divided into the first pipe segment 341 and the second pipe segment 342, which are respectively sleeved on the first rod segment 211 and the second rod segment 212, so as to avoid the first insulating sleeve from breaking, thereby improving the strength of the first insulating sleeve, and improving the stability and durability of the electrode mechanism of the electrical semiconductor process furnace. However, the number of the first electrode rods and the first insulating sleeves is not limited thereto.
Alternatively, an insertion portion may be provided on the first pipe segment 341 so that the second pipe segment 342 is partially inserted into the insertion portion, or an insertion portion may be provided on the second pipe segment 342 so that the first pipe segment 341 is partially inserted into the insertion portion. As shown in fig. 4, the second pipe section 342 is provided with an insertion part into which the first pipe section 341 is partially inserted. The provision of the insert may firstly make the connection of the first and second pipe sections 341, 342 more stable, and in the event of damage at the connection, the insert may limit the diffusion of debris generated thereby. Further, a locking member 37 may be provided at the outer side of the insertion portion to lock the joint of the first tube segment 341 and the second tube segment 342, thereby further locking the joint of the first rod segment 211 and the second rod segment 212 to improve the stability of the joint.
In this embodiment, a second insulating barrier 36 may be further disposed between the first pipe segment 341 and the second pipe segment 342, and the locking member 37 locks the second insulating barrier 36 between the second insulating barrier 36 and the first pipe segment 341 or the second pipe segment 342 to prevent the second insulating barrier 36 from moving, so that the electricity on the first electrode rod can be prevented from creeping onto the cantilever pipe 321 through the gap between the first pipe segment 341 and the second pipe segment 342 due to the insulating capability of the second insulating barrier 36.
In a preferred embodiment of the present invention, the second electrode assembly may include a second electrode rod 22, and a second insulating sleeve 38 sleeved on the second electrode rod 22.
Specifically, the second electrode rod 22 passes through the introducing channel 72 on the connecting plate 71 to be electrically connected to the second conductive seat 312, and the second insulating sleeve 38 is sleeved on the second electrode rod 22 to prevent the current from diffusing into the semiconductor process furnace through the cantilever assembly to affect the processing of the wafers in the wafer boat 1.
In this embodiment, the cantilever assembly may further include a second insulating sealing member 42, the second insulating sealing member 42 is disposed at an end of the second insulating sleeve 38 located outside the oven door, the second electrode rod 22 extends into the second insulating sleeve 38 through the second insulating sealing member 42, and the second insulating sealing member 42 is connected to the second insulating sleeve 38 and the second electrode rod 22 in a sealing manner.
By virtue of the sealing connection between the second insulating sealing component 42 and the second insulating sleeve 38 and the second electrode rod 22, the external air can be prevented from entering the interior of the semiconductor process furnace body through the second insulating sleeve 38 so as to meet the vacuum sealing requirement of the semiconductor processing process, and by virtue of the insulating capability of the second insulating sealing component 42, the current carried by the second electrode rod 22 can be prevented from creeping onto the connecting plate 71. The structure of the second insulating and sealing member 42 may be similar to that of the first insulating and sealing member 41, and thus, a detailed description thereof will be omitted.
In the present embodiment, the first electrode rod and the second electrode rod 22 both extend from the outside of the furnace mouth of the semiconductor process furnace body to the inside of the semiconductor process furnace body, so as to facilitate the arrangement of the first electrode rod and the second electrode rod 22 in the semiconductor process furnace body. In addition, in the embodiment, the cantilever assembly is connected with the semiconductor process furnace body through the pushing assembly, the cantilever assembly can also generate displacement before and after the process, and the first electrode rod and the second electrode rod 22 can be prevented from extruding the first electrode rod and the second electrode rod 22 in the moving process by enabling the first electrode rod and the second electrode rod 22 to extend into the semiconductor process furnace body from the outer side of the furnace mouth of the semiconductor process furnace body, so that the service life of an electrode mechanism of the semiconductor process furnace is further prolonged, the process repeatability is improved, the process time is reduced, the equipment productivity is increased, and the process cost is reduced.
In this embodiment, the electrode mechanism further includes: and an electrode connecting plate 6 disposed at a side of the first conductive seat 311 away from the oven door, wherein the first electrode assembly is electrically connected with the first conductive seat 311 through the electrode connecting plate 6.
Specifically, be provided with electrode connecting post 5 on one side that first conduction seat 311 kept away from the furnace gate, be provided with the first connecting hole 61 that supplies electrode connecting post 5 to pass on the electrode connecting plate 6, still be provided with the second connecting hole 62 that supplies first electrode pole to pass on the electrode connecting plate 6, the electric current that first electrode pole carried flows to electrode connecting post 5 on through electrode connecting plate 6 to flow to first conduction seat 311 on, and then realize that first electrode pole is connected with first conduction seat 311 electricity.
In the embodiment, since the semiconductor processing technology needs to meet the vacuum requirement, the electrode connecting plate 6 may further be provided with a vent 63, and the vent 63 is communicated with the inside of the cantilever tube 321, so that when the inside of the semiconductor processing furnace body is vacuumized, the gas in the cantilever tube 321 can be pumped out through the vent 63, and the gas in the cantilever tube 321 is prevented from disturbing the vacuum inside the semiconductor processing furnace body.
In this embodiment, the electrode mechanism further includes: the limiting members 8, the first insulating sleeve 331 and the second insulating sleeve 332 are all provided with the limiting members 8, and the limiting members 8 are used for positioning the first insulating sleeve 331 and the second insulating sleeve 332, and further positioning the first conducting base 311 and the second conducting base 312. The first conductive base 311 and the second conductive base 312 are positioned by the position-limiting member 8, so as to prevent the boat 1 from falling off from the first conductive base 311 and the second conductive base 312.
Specifically, the limiting member 8 disposed on the first insulating sleeve 331 is disposed on one side of the first conductive base 311 away from the second conductive base 312, so as to limit the first conductive base 311 from moving in a direction away from the second conductive base 312, and the limiting member 8 disposed on the second insulating sleeve 332 is disposed on one side of the second conductive base 312 away from the first conductive base 311, so as to limit the second conductive base 312 from moving in a direction away from the first conductive base 311.
In this embodiment, the first conductive seat 311 and the second conductive seat 312 are both provided with the limiting parts 9, two ends of the wafer boat 1 are respectively provided with at least one boat leg 11, and the number of the limiting parts 9 is the same as that of the boat legs 11 and is arranged in one-to-one correspondence with the boat legs 11.
Specifically, a slope may be provided on the first conductive seat 311 and the second conductive seat 312 as the limiting portion 9, or a groove may be provided on the first conductive seat 311 and the second conductive seat 312 as the limiting portion 9. However, the form of the stopper 9 is not limited thereto. In this embodiment, the limiting portion 9 is a slope surface disposed on the first conductive seat 311 and the second conductive seat 312, and when the boat 1 is placed on the first conductive seat 311 and the second conductive seat 312, the boat legs 11 of the boat 1 contact the slope surface, so as to slide down to the first conductive seat 311 and the second conductive seat 312 along the slope surface, so as to limit the position of the boat 1 on the first conductive seat 311 and the second conductive seat 312.
The embodiment also provides a semiconductor process furnace which comprises the electrode mechanism provided by the embodiment.
The semiconductor process furnace provided by the embodiment of the invention has the advantages that the process result can be improved, the process time can be reduced, the equipment productivity can be increased, and the processing cost can be reduced by means of the electrode mechanism of the semiconductor process furnace provided by the invention.
In summary, the electrode mechanism of the semiconductor process furnace and the semiconductor process furnace provided by the embodiment can improve the process result, reduce the process time, increase the equipment productivity and reduce the processing cost.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (7)
1. An electrode mechanism for a semiconductor processing furnace, comprising: a connecting plate, a first electrode assembly, a second electrode assembly, a first conductive mount, a second conductive mount, and a cantilever assembly, wherein,
the connecting plate is connected with a furnace door of the semiconductor process furnace;
the cantilever assembly penetrates through the connecting plate and the furnace door and extends towards the direction of the furnace body of the semiconductor process furnace; the cantilever assembly is connected with the semiconductor process furnace body through a pushing assembly, and the pushing assembly is used for driving the cantilever assembly to move relative to the semiconductor process furnace body;
the first conduction seat and the second conduction seat are arranged on the cantilever assembly and are respectively and electrically connected with two ends of a wafer boat of the semiconductor process furnace in a separable way;
the first electrode assembly penetrates through the cantilever assembly and is electrically connected with the first conducting seat;
the second electrode assembly penetrates through the connecting plate and the furnace door to be electrically connected with the second conduction seat;
the cantilever assembly comprises a cantilever pipe, a supporting pipe, a first insulating sleeve, a second insulating sleeve and a fixing sleeve, wherein,
the cantilever pipe penetrates through the connecting plate and the furnace door, the supporting pipe is axially connected with the cantilever pipe and extends towards the furnace body, and the first electrode assembly penetrates through the cantilever pipe and the supporting pipe;
the fixed sleeve is sleeved at the joint of the cantilever pipe and the supporting pipe;
the first conducting seat is arranged on the supporting tube, and the first insulating sleeve is sleeved at the part of the supporting tube corresponding to the first conducting seat;
the second conducting seat is arranged on the supporting tube, and the second insulating sleeve is sleeved at the part of the supporting tube corresponding to the second conducting seat;
the cantilever assembly further comprises a first insulating sealing part, the first insulating sealing part is arranged at one end, which is not connected with the support pipe, of the cantilever pipe, the first electrode assembly penetrates through the first insulating sealing part and extends into the cantilever pipe, and the first insulating sealing part is connected with the cantilever pipe and the first electrode assembly in a sealing mode;
the first insulating sealing member includes: an insulating sleeve, an insulating flange seat, a first sealing ring, a second sealing ring and a connecting ring body, wherein,
the insulating flange seat is arranged at one end of the cantilever pipe, which is not connected with the support pipe, and comprises a main body part and a clamping table part, wherein the main body part extends into the cantilever pipe, and the clamping table part is clamped at the port of the cantilever pipe, so that the current carried by the first electrode assembly is prevented from creeping to the cantilever pipe through the port of the cantilever pipe;
the insulating sleeve is arranged at one end, away from the cantilever pipe, of the insulating flange seat and abuts against the insulating flange seat, and a first clamping table is arranged on the outer side wall of the insulating sleeve;
the first sealing ring is arranged between the insulating sleeve and the insulating flange seat, and the second sealing ring is arranged between the insulating flange seat and the cantilever pipe;
the connecting ring body is sleeved on the outer sides of the insulating sleeve and the clamping table part, a second clamping table matched with the first clamping table is arranged on the inner side wall of the connecting ring body, and the connecting ring body is connected with the cantilever pipe so as to tightly press the insulating sleeve, the insulating flange seat, the first sealing ring and the second sealing ring;
the first electrode assembly penetrates through the insulating sleeve and the insulating flange seat and extends into the cantilever pipe.
2. The electrode mechanism of claim 1, wherein the cantilever assembly further comprises: and the first insulating baffle ring is arranged at one end of the connecting ring body, which is far away from the cantilever pipe.
3. The electrode assembly according to any one of claims 1-2, wherein the first electrode assembly comprises a first electrode rod, a first insulating sleeve disposed over the first electrode rod, wherein,
the first electrode rod comprises a first rod section and a second rod section, the first insulating sleeve comprises a first pipe section and a second pipe section, the first pipe section is sleeved on the first rod section, and the second pipe section is sleeved on the second rod section; said first pole segment and said second pole segment being interconnected; the first pipe section is provided with an insertion part, and the second pipe section is partially inserted into the insertion part, or the second pipe section is provided with an insertion part, and the first pipe section is partially inserted into the insertion part;
the first electrode assembly further comprises a locking member sleeved outside the insertion part and used for locking the joint of the first pipe section and the second pipe section.
4. The electrode mechanism as claimed in any one of claims 1-2, wherein the second electrode assembly comprises a second electrode rod, and a second insulating sleeve sleeved on the second electrode rod.
5. The electrode mechanism of any one of claims 1-2, further comprising: the electrode connecting plate is arranged on one side, far away from the furnace door, of the first conducting seat, and the first electrode assembly is electrically connected with the first conducting seat through the electrode connecting plate.
6. The electrode mechanism of any of claims 1-2, further comprising: the limiting parts are arranged on the first insulating sleeve and the second insulating sleeve and used for positioning the first insulating sleeve and the second insulating sleeve so as to position the first conducting seat and the second conducting seat.
7. A semiconductor processing furnace comprising an electrode mechanism according to any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911368034.5A CN111058016B (en) | 2019-12-26 | 2019-12-26 | Electrode mechanism of semiconductor process furnace and semiconductor process furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911368034.5A CN111058016B (en) | 2019-12-26 | 2019-12-26 | Electrode mechanism of semiconductor process furnace and semiconductor process furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111058016A CN111058016A (en) | 2020-04-24 |
| CN111058016B true CN111058016B (en) | 2022-11-25 |
Family
ID=70302740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911368034.5A Active CN111058016B (en) | 2019-12-26 | 2019-12-26 | Electrode mechanism of semiconductor process furnace and semiconductor process furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111058016B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111560606B (en) * | 2020-05-21 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Heating furnace body control method in semiconductor heat treatment equipment, heating furnace body and equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201608198U (en) * | 2010-01-27 | 2010-10-13 | 无锡绿波新能源设备有限公司 | Horizontal graphite boat |
| CN102321877A (en) * | 2011-09-05 | 2012-01-18 | 北京七星华创电子股份有限公司 | Electrode introduction device |
| CN105483647A (en) * | 2016-01-07 | 2016-04-13 | 深圳市捷佳伟创新能源装备股份有限公司 | Plasma enhanced chemical vapor deposition device |
| CN108456874A (en) * | 2017-12-20 | 2018-08-28 | 湖南红太阳光电科技有限公司 | A kind of Tubular PECVD device graphite boat electrode inlet device |
| CN207967023U (en) * | 2018-02-02 | 2018-10-12 | 深圳丰盛装备股份有限公司 | A kind of electrode mechanism of tubular type PECVD |
| CN209276632U (en) * | 2018-12-21 | 2019-08-20 | 苏州阿特斯阳光电力科技有限公司 | A kind of electrode rod seal structure and filming equipment |
-
2019
- 2019-12-26 CN CN201911368034.5A patent/CN111058016B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201608198U (en) * | 2010-01-27 | 2010-10-13 | 无锡绿波新能源设备有限公司 | Horizontal graphite boat |
| CN102321877A (en) * | 2011-09-05 | 2012-01-18 | 北京七星华创电子股份有限公司 | Electrode introduction device |
| CN105483647A (en) * | 2016-01-07 | 2016-04-13 | 深圳市捷佳伟创新能源装备股份有限公司 | Plasma enhanced chemical vapor deposition device |
| CN108456874A (en) * | 2017-12-20 | 2018-08-28 | 湖南红太阳光电科技有限公司 | A kind of Tubular PECVD device graphite boat electrode inlet device |
| CN207967023U (en) * | 2018-02-02 | 2018-10-12 | 深圳丰盛装备股份有限公司 | A kind of electrode mechanism of tubular type PECVD |
| CN209276632U (en) * | 2018-12-21 | 2019-08-20 | 苏州阿特斯阳光电力科技有限公司 | A kind of electrode rod seal structure and filming equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111058016A (en) | 2020-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8336891B2 (en) | Electrostatic chuck | |
| US6072685A (en) | Electrostatic chuck having an electrical connector with housing | |
| CN111058016B (en) | Electrode mechanism of semiconductor process furnace and semiconductor process furnace | |
| US20010054484A1 (en) | Plasma processor, cluster tool, and method of controlling plasma | |
| US20100326602A1 (en) | Electrostatic chuck | |
| US9240303B2 (en) | Dual tube support for electron emitter | |
| CN108456874A (en) | A kind of Tubular PECVD device graphite boat electrode inlet device | |
| CN110565075B (en) | Graphite boat electrode butt joint device for tubular PECVD (plasma enhanced chemical vapor deposition) equipment | |
| CN114411122A (en) | Semiconductor processing equipment and process chamber thereof | |
| EP3699946A1 (en) | Ion source and ion injection device | |
| JP2007280905A (en) | Back face electron bombardment heating device | |
| CN202871758U (en) | Safety cooling gas delivery device | |
| US2395991A (en) | Mounting of electrodes in electric discharge tubes | |
| US4994706A (en) | Field free, directly heated lanthanum boride cathode | |
| TW201503208A (en) | Flourine and HF resistant seals for an ion source | |
| CN111180298A (en) | Radio frequency ion source starts filament device | |
| CN206148394U (en) | Gasification discharge device of isotope ion source for electromagnetic separator | |
| EP1065696A2 (en) | Ion implantation apparatus and ion source and ion source subassembly for use in ion implantation apparatus | |
| CN114351121B (en) | Fixture for carrying out PECVD (plasma enhanced chemical vapor deposition) on long rod-shaped workpiece | |
| WO2019054111A1 (en) | Ion source, ion injection device and ion source operation method | |
| KR102650161B1 (en) | Ceramic susceptor | |
| CN219739341U (en) | DC high voltage feed-through | |
| KR101692205B1 (en) | Source head for semiconductor equipment | |
| CN117836891A (en) | Vacuum tube insert assembly with feedthrough pin plug and mating socket | |
| KR20040004781A (en) | Electrostatic chuck assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |