CN1110432A - Non-crystalline silicon/ferroelectric ceramic composite film and its use - Google Patents

Non-crystalline silicon/ferroelectric ceramic composite film and its use Download PDF

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Publication number
CN1110432A
CN1110432A CN94112118A CN94112118A CN1110432A CN 1110432 A CN1110432 A CN 1110432A CN 94112118 A CN94112118 A CN 94112118A CN 94112118 A CN94112118 A CN 94112118A CN 1110432 A CN1110432 A CN 1110432A
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film
amorphous silicon
electrode
basrtio
ferroelectric
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吴道怀
俞大畏
陈慧婷
周章
王永令
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Shanghai Institute of Ceramics of CAS
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Shanghai Institute of Ceramics of CAS
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Priority to CN94112118A priority Critical patent/CN1110432A/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The present invention relates to an amorphous silicon/ferroelectric ceramics compound film with photo-electric conversion function, preparation and its application, belonging to the fields of microelectronics and photoelectronics. The compound film provided by said invention consists of substrate i, doped PZT ferroelectric ceramic film or Ba SrTiO3 ceramic film 2, amorphous silicon film 3 and electrodes of 4, 5 and 6. It is chraracterized by that it uses the good photoconductivity of the amorphous silicon, and after light illumination, its electric resistance is reduced by four orders of magnitude, so that it provides a light-controlled bias electric field for ferroelectric film so as to implement photo-electric conversion. The invented compound film can be made into various photo-electric integrated devices, such as photoswitch, photomemory and photoelectric sensor, etc..

Description

Non-crystalline silicon/ferroelectric ceramic composite film and its use
What the present invention relates to is amorphous silicon/silicon/ferroelectric ceramic composite film that has photoelectric converting function and uses thereof, belongs to microelectronics and photoelectron technology field.
Current, silicon integrated circuit and the ferroelectric ceramic thin film that develop countries in the world are compound, made the 16K memory, but ferroelectric conversion field is to be controlled by electric signal, if can control with the light signal, realize opto-electronic conversion, thereby can further enlarge the application of this class laminated film, can be used for all kinds of optoelectronic switches, optical memory, photoelectric sensor etc.
The object of the present invention is to provide a kind of the have brand-new amorphous silicon/silicon/ferroelectric ceramic composite film of photoelectric converting function and the multiple photoelectric device that becomes by this class film preparation.This class laminated film provides brand-new light-operated bias field, and the polarity of being controlled residual polarization Pr in the ferroelectric ceramic thin film by the ambient light signal turns to, thereby realizes opto-electronic conversion.
Unique distinction of the present invention is a good light electrical conductance of utilizing amorphous silicon, for ferroelectric thin film provides light-operated bias field, thereby realizes opto-electronic conversion.Specifically, laminated film provided by the invention is made up of substrate, ferroelectric ceramic thin film, amorphous silicon membrane and electrode.Its structural representation as shown in Figure 1.
1 is substrate among the figure; 2 are doping PZT sections electroceramics film (or BaSrTiO 3); 3 is amorphous silicon membrane; 4,5,6 be electrode.Substrate 1 is by common Si/SiO 2Form.Ferroelectric ceramic thin film 2 specifically consist of Pb(Zr xTi 1-x) O 3, wherein the specification requirement of the different components that can make by actual needs of X is regulated arbitrarily in the 0.4-0.6 scope, and its resistivity is controlled at 10 7～10 9Ω-cm, thickness are 0.2-1 μ m, and the rf magnetron sputtering prepared by common also can adopt other ferroelectric material, as BaSrTiO 3, its resistivity and thickness requirement are all approaching with PZT sections electroceramics film.Amorphous silicon membrane 3 is a-Si: H, by common radio frequency glow discharge silane decomposition deposition, its dark resistivity is 10 8～10 10Ω-cm, resistivity 4 orders of magnitude that can descend reach 10 under the AMI rayed 4～10 5Ω-cm, film thickness control is by the resistance decision, and principle is its resistance and pzt thin film (or BaSrTiO 3Film) resistance is complementary.Metal electrode the 4, the 5th is made up of pt, Au, Al, Ni, Cr, Ni-Cr metal or alloy, is formed by radio frequency sputtering or electron-beam evaporation.6 for advancing the spire electrode, selects transparent conducting glass ITO for use, also is to make with radio frequency sputtering or electron-beam evaporation technology.
Amorphous silicon/ferroelectric ceramic thin film provided by the invention has photoelectric converting function, and operation principle is to apply bias voltage V at laminated film two ends, and light is advanced at top electrode 6 places.Under dark electric field, the dark resistance R of a-Si: H Si
Figure 941121186_IMG2
Resistance R than ceramic membranes such as PZT pMuch bigger, i.e. R Si
Figure 941121186_IMG3
R p, this moment, applying bias substantially all was added in a-Si: on the H, i.e. and V Si
Figure 941121186_IMG4
≈ V Add, V p≈ 0.After the illumination (as AMI intensity), because 4 orders of magnitude of resistivity decreased of a-Si: H, thereby making a-Si: the light resistance of H is than PZT or BaSrTiO 3Resistance much lower, i.e. R Si ＜＜R p, this moment, applying bias all was added in PZT or BaSrTiO basically 3On, i.e. V Si
Figure 941121186_IMG6
≈ 0, V p≈ V AddThat is after laminated film was subjected to illumination, applying bias was transferred to PZT or BaSrTiO by a-Si: H 3, this light-operated bias field turns to the polarity of residual polarization Pr among the PZT, thereby has photoelectric converting function, and concrete test data is listed in table 1.Can be clear that from table 1 in applied voltage 1-3 volt scope, voltage drop is different before and after the irradiation, also is that amorphous silicon/ferroelectric ceramic thin film provided by the invention has photoelectric converting function preferably, and switching rate fast (＜10 -9/ second), the low (＜1mw/mm of Writing power 2), repeat erasable number of times height (～10 12Inferior) but, storage density is high and characteristics such as permanent storage, suitable with the compound memory of silicon integrated circuit/ferroelectric ceramic thin film on its performance, maximum difference is that laminated film provided by the invention has photoelectric converting function, is photocontrol.Thereby enlarged the face of its application, can be made into integrated optoelectronic devices such as optoelectronic switch, optical memory, photoelectric sensor, and can be combined into the multifunctional photoelectric integrated circuit with silicon integrated circuit.
Transfer (the intensity of illumination 1mw/mm of voltage before and after table 1 amorphous silicon/silicon/ferroelectric ceramic composite film illumination 2)
Applied voltage Secretly Bright
V(v) Vsi
Figure 941121186_IMG7
 Vp Vsi
Figure 941121186_IMG8
 Vp
1.0 2.0 3.0 0.98 1.96 2.92 0.02 0.04 0.08 0.03 0.07 0.11 0.96 1.92 2.86

Claims (4)

1, a kind of amorphous silicon/silicon/ferroelectric ceramic composite film with photoelectric converting function is characterized in that
(1) laminated film is by substrate 1, doping PZT or BaSrTiO on the structure 3Ferroelectric ceramic thin film 2, amorphous silicon membrane 3 and electrode 4,5,6 are formed;
(2) doping PZT ferroelectric thin film 2 is Pb (Zr xTi 1-x) O 3, X can be by changing in the 0.4-0.6 scope, and thickness is 0.2-1 μ m, or BaSrTiO 3
(3) amorphous silicon membrane 3 is a-Si: H, and its THICKNESS CONTROL is at its resistance and PZT or BaSrTiO 3In the matching range;
(4) electrode 4,5, be metal electrode, as Pt, Au, Al, Ni, Cr, Ni-Cr alloy;
(5) electrode 6 is by transparent conducting glass ITO;
(6) substrate 1 is by Si/SiO 2Form.
2, by the described laminated film of claim 1, it is characterized in that PZT or BaSrTiO 3Ferroelectric ceramic thin film 2 and amorphous silicon membrane 3 are respectively by common radio-frequency magnetron sputter method and the preparation of radio frequency glow discharge thermal decomposition of silane deposition process.
3, by the described laminated film of claim 1, it is characterized in that electrode the 4,5, the 6th, prepare by radio frequency sputtering or electron-beam evaporation method.
4, can be prepared into integrated optoelectronic device and the multifunctional photoelectric integrated circuits compound such as optoelectronic switch, optical memory, photoelectric sensor with the described laminated film of claim 1 with silicon integrated circuit.
CN94112118A 1994-04-12 1994-04-12 Non-crystalline silicon/ferroelectric ceramic composite film and its use Pending CN1110432A (en)

Priority Applications (1)

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CN94112118A CN1110432A (en) 1994-04-12 1994-04-12 Non-crystalline silicon/ferroelectric ceramic composite film and its use

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Application Number Priority Date Filing Date Title
CN94112118A CN1110432A (en) 1994-04-12 1994-04-12 Non-crystalline silicon/ferroelectric ceramic composite film and its use

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100399512C (en) * 2003-01-16 2008-07-02 Tdk株式会社 Method of mfg. iron silicide and photoelectric energy converter
CN102449465A (en) * 2009-05-14 2012-05-09 地热能源公司 Apparatus and method for ferroelectric conversion of heat to electrical energy
CN104868048A (en) * 2015-05-13 2015-08-26 重庆科技学院 Photoinduced telescopic composite membrane and light driver made of photoinduced telescopic composite membrane

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100399512C (en) * 2003-01-16 2008-07-02 Tdk株式会社 Method of mfg. iron silicide and photoelectric energy converter
CN102449465A (en) * 2009-05-14 2012-05-09 地热能源公司 Apparatus and method for ferroelectric conversion of heat to electrical energy
CN104868048A (en) * 2015-05-13 2015-08-26 重庆科技学院 Photoinduced telescopic composite membrane and light driver made of photoinduced telescopic composite membrane
CN104868048B (en) * 2015-05-13 2018-02-02 重庆科技学院 A kind of photo-induced telescopic composite membrane and its CD-ROM driver of making

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