CN111025854B - Hybrid projection objective, projection exposure equipment and imaging system - Google Patents

Hybrid projection objective, projection exposure equipment and imaging system Download PDF

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CN111025854B
CN111025854B CN201911336188.6A CN201911336188A CN111025854B CN 111025854 B CN111025854 B CN 111025854B CN 201911336188 A CN201911336188 A CN 201911336188A CN 111025854 B CN111025854 B CN 111025854B
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projection objective
reflector
imaging
speculum
hybrid
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CN111025854A (en
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刘涛
张新
王灵杰
史广维
付强
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements

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  • General Physics & Mathematics (AREA)
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Abstract

The invention relates to a hybrid projection objective, a projection exposure apparatus and an imaging system, the hybrid projection objective comprising: the first reflector and the second reflector are arranged between the object plane and the image plane, and an aperture diaphragm, a secondary imaging compensation diffraction element and a field diaphragm are sequentially arranged between the object plane and the second reflector. The invention has the advantages that the imaging field range is larger, the numerical aperture is higher, the resolution is higher, the incidence angle of the light on the reflector is smaller, the influence of the reflectivity received by the change of the incidence angle is smaller, and therefore, the optical system can easily realize more uniform pupil apodization in the whole imaging aperture content.

Description

Hybrid projection objective, projection exposure equipment and imaging system
Technical Field
The invention relates to the technical field of optical design, in particular to a hybrid projection objective, a projection exposure device and an imaging system.
Background
In 1895, a german scientist roentgen discovered X-rays when testing a cathode ray tube, and since then attracted many people to begin studying X-ray imaging, the following two technologies have been studied mainly for imaging systems of ultrashort wavelength rays such as X-rays:
the first is a diffraction imaging technology, and a diffraction optical element is widely applied to the field of X-ray imaging due to the excellent characteristics of high design freedom, wide material selectivity, flexible and changeable wavefront conversion, suitability for array manufacturing and the like.
The second technique is a reflective imaging technique, and people currently adopt a total reflection type structure of multiple reflectors to be applied to an extreme ultraviolet projection photoetching optical system. Taking a miniature projection objective with a Schwarzschild two-lens structure as an example, the miniature projection objective can realize correction of three-level spherical aberration, coma aberration and astigmatism due to simple structure, and the Schwarzschild optical system has a large image plane, a large numerical aperture, a wide working waveband and a large enough rear working distance, so that extremely high spatial resolution imaging can be realized within a certain field range. In a traditional multi-reflector system, most of reflectors of the multi-reflector system adopt aspheric surfaces or even free-form surfaces. The processing and detection difficulty of the aspheric surface and the free-form surface with ultra-high precision which can be used for the photoetching system is very high, and the processing period is also longer. Therefore, the objective lens design of the second technique (reflection imaging technique) has not been able to satisfy the practical demand.
The technical problem to be solved by the invention is to overcome the defects of the two technologies and provide a reflection-diffraction hybrid projection objective lens of an imaging system, in particular to a microlithography projection exposure apparatus, wherein the imaging system can realize imaging or lithography projection with larger field of view and higher resolution on the basis of fully combining the respective advantages of the reflection imaging technology and the diffraction imaging technology, and can ensure an image plane telecentric optical path.
Disclosure of Invention
The invention aims to provide a hybrid projection objective, a projection exposure device and an imaging system, aiming at overcoming the defects of the two technologies, wherein the hybrid projection objective can realize imaging or photoetching projection with larger field of view and higher resolution on the basis of fully combining the respective advantages of a reflection imaging technology and a diffraction imaging technology, and can ensure an image plane telecentric optical path.
In order to achieve the purpose, the invention provides the following technical scheme: a hybrid projection objective, comprising: the object plane, first speculum, second mirror and image plane, first speculum with the second mirror set up in the object plane reaches between the image plane, first speculum is close to image plane, the second mirror is close to its characterized in that of object plane the object plane with still be provided with aperture diaphragm, secondary imaging compensation diffraction component and view field diaphragm between the second mirror according to the preface.
Preferably, the aperture stop, the secondary imaging compensation diffraction element, the field stop, the first mirror, and the second mirror are all arranged on the same optical axis, and all elements are symmetrical with respect to the optical axis.
Preferably, the position of the field stop is the position of the primary imaging surface of the secondary imaging compensation diffraction element.
Preferably, the first mirror is a convex mirror convex to the object plane, while the second mirror is a concave mirror concave to the image plane.
Preferably, the secondary imaging compensation diffraction element comprises a plane substrate and a diffraction film, and the diffraction film is attached to the plane substrate.
Preferably, the diffractive film is a concentric band diffractive film having a plurality of concentric annular bands.
Preferably, the diffraction film is a photon sieve diffraction film, and the photon sieve diffraction film comprises a plurality of concentric annular zones and light-passing micropores distributed on the concentric annular zones.
The invention also discloses a projection exposure apparatus comprising the hybrid projection objective.
The invention further discloses an imaging system comprising a hybrid projection objective and an illumination source, wherein the hybrid projection objective is the hybrid projection objective, and the illumination source is selected from one of visible wavelength, UV wavelength, DUV wavelength, EUV and VUV wavelength.
Compared with the prior art, the invention has the following advantages:
1. the invention uses two reflectors and a diffraction element together, and corrects various aberrations well by a structure form of reflection and diffraction mixing, so that the optical system has a larger field range;
2. by introducing the secondary imaging compensation diffraction element, the invention can control the high-level amount of spherical aberration and coma aberration caused by the large numerical aperture of the optical system, and increase the relative aperture of the imaging system, thereby obtaining better imaging resolution;
3. the incidence angle of the light on the reflector is smaller, and the influence of the reflectivity due to the change of the incidence angle is smaller, so that the optical system can realize more uniform pupil apodization in the whole imaging aperture;
4. the diaphragm is not arranged on the spherical center of the reflector, but an aperture diaphragm is arranged at a proper position between the object plane and the diffraction element, so that the light path of the imaging system meets the requirement of the telecentric light path of the image plane.
5. The diffraction element mainly plays a role in aberration compensation, and the optical focal angle of the diffraction element is very small, so that the size of the diffraction microstructure is larger than the resolution of the whole optical system, and the processing is very easy to complete by using a conventional micro-nano processing means.
Drawings
FIG. 1 is a schematic diagram of a hybrid projection objective according to the present invention.
FIG. 2 is a schematic structural diagram of a hybrid projection objective in a telecentric state.
FIG. 3 is a graph of phase and period versus radial distance for a double imaging compensating diffractive element of the present invention.
FIG. 4 is a schematic diagram of opaque regions of a secondary imaging compensation diffraction element according to the present invention.
FIG. 5 is a schematic diagram of a secondary imaging diffraction element according to the present invention in which diffraction stray light is eliminated.
FIG. 6 is a schematic structural diagram of a secondary imaging compensation diffraction element according to the present invention.
FIG. 7a is a schematic diagram of a concentric band diffractive film.
FIG. 7b is a schematic diagram of a photonic sieve diffraction film.
Fig. 8 is a modulation transfer function curve according to an embodiment of the present invention.
FIG. 9 is a dot-column diagram of an embodiment of the invention.
Fig. 10 is a distortion plot for an embodiment of the present invention.
In the figure: 10. an object surface; 11. an aperture diaphragm; 12. a secondary imaging compensation diffraction element; 120. a light-tight region; 121. a planar substrate; 122. a diffractive film; 13. a field stop; 14. a first reflector; 15. a second reflector; 20. and (4) an image plane.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1 and fig. 2, the present invention provides a hybrid projection objective, which includes: the invention combines the structure of the traditional two-piece Schwarzschild objective lens, further adds the secondary imaging compensation diffraction element 12 as a secondary imaging compensation lens group, and can control the high-level amount of spherical aberration and coma aberration caused by the large numerical aperture of an optical system by introducing the secondary imaging compensation diffraction element 12, thereby enlarging the field range and the relative aperture.
In this embodiment, the effective focal lengths of the first reflector 14 and the second reflector 15 may be f equal to 2.456mm, the numerical aperture NA of the image plane 20 is 2.5, the wavelength is 13.4nm ± 0.00067nm, the total optical length is 253.56mm, the total field of the image plane 20 reaches Φ 0.04mm, the magnification is 0.2 times, and the distortion of the fringe field is less than 0.6 nm. The hybrid projection objective can be used as a photoetching optical lens with large field of view, low distortion and high resolution and can also be used as a high-performance microscopic imaging detection lens.
The mirror parameters for this example are as follows:
Figure GDA0002847285760000051
Figure GDA0002847285760000061
the type of diffractive element 12 in the example is a Binary surface (Binary2), whose diffraction equation:
Figure GDA0002847285760000062
where phi is the diffraction phase, the diffraction order M is 1, and rho is rrNormFor normalized aperture, r is the aperture of the diffractive element 12, rNorm1.0 normalized radius, diffraction coefficient A1、A2、A3、A4、A5、A6As in the following table:
serial number A1 A2 A3 A4 A5 A6
Coefficient of diffraction element -2.887e+004 49.205 -421.556 904.473 -981.777 411.575
Referring to fig. 3 and 4, fig. 3 is a graph showing the relationship between the phase and period of the secondary imaging compensation diffraction element 12 and the radial distance, and fig. 4 is a schematic diagram showing the opaque region of the secondary imaging compensation diffraction element 12, wherein the shaded region is the opaque region 120 of the secondary imaging compensation diffraction element 12. As can be seen from fig. 3, the maximum line frequency of the second-order imaging compensation diffraction element 12 is 10100periods/mm, and the corresponding minimum period line width is 49.5nm, so that the diffraction surface with the size can be completely completed by the existing processing technology such as photolithography.
In this embodiment, the aperture stop 11, the secondary imaging compensation diffraction element 12, the field stop 13, the first reflector 14 and the second reflector 15 are all arranged on the same optical axis, and all the elements are symmetrical with respect to the optical axis, meanwhile, the stop of the projection objective of the present invention is not arranged on the spherical center of the reflector, but arranged at a proper position between the object plane and the diffraction element, and the aperture stop 11 is arranged at the position, so that the optical path can meet the requirement of the telecentric optical path of the image plane, and further, the position of the field stop 13 is the position of the primary imaging plane of the secondary imaging compensation diffraction element 12.
The central area of the secondary imaging compensation diffraction element 12 is a non-light-transmitting area 120, fig. 5 is a schematic diagram of the invention in which the diffracted parasitic light of the secondary imaging diffraction element 12 is eliminated, and the non-light-transmitting area 120 at the center of the secondary imaging compensation diffraction element 12 is overlapped with the field stop 13 in front and back, so that the diffracted parasitic light of other orders of the diffraction element 12 can be completely eliminated.
The first mirror 14 is a convex mirror convex toward the object plane 10 and the second mirror 15 is a concave mirror concave toward the image plane 20, in another case, the first mirror 14 and the second mirror 15 may be both spherical.
As shown in fig. 6, the secondary imaging compensation diffraction element 12 includes a planar substrate 121 and a diffraction film 122, the diffraction film 122 is attached to the planar substrate 121, see fig. 7a, the diffraction film 122 may be a concentric band diffraction film having concentric annular zones, see fig. 7b, the diffraction film 122 may also be a photon sieve diffraction film having concentric annular zones and wide micro-holes distributed on the concentric annular zones.
Fig. 8 is a modulation Transfer function (mtf) curve of the present embodiment, in which the horizontal axis represents spatial frequency, and the unit: the line pair is per millimeter lp/mm; the longitudinal axis surface modulation transfer function MTF value is used for evaluating the imaging quality of the lens, the value range is 0 to 1.0, the higher the MTF curve is, the straighter the MTF curve is, the better the imaging quality of the lens is, and the stronger the reduction capability of the real image is. As can be seen from FIG. 8, the MTF of the imaging system at 15625lp/mm resolution of 32nm is >0.27, which ensures that the lens assembly can be clearly imaged on the whole imaging surface 20.
FIG. 9 is a dot array diagram of the present embodiment, and it can be seen from FIG. 9 that the radius of the Airbus elispot is 0.0409 μm, and the radii of the dot array diagrams of the three fields of view are 0.017 μm, 0.016 μm and 0.023 μm, respectively, which are all smaller than the radius of the Airbus elispot, indicating that the imaging quality is very high.
Fig. 10 is a distortion graph of the present embodiment, in which the horizontal axis is mm and the vertical axis is the field of view. Distortion is a distortion when an actual lens images an object, and can make a straight line image into a curve, which is inevitable in actual imaging. The absolute value of the distortion of the full field of view of the embodiment is less than 0.6nm, the design resolution is 32nm, and the distortion absolute value/resolution is < 1/50' through calculation. For some optical hardware, distortion of less than one tenth of the resolution is usually required, and the result in this embodiment is much higher than the low distortion requirement.
The invention furthermore relates to a projection exposure apparatus which comprises a hybrid projection objective according to the preceding embodiments.
The invention further relates to an imaging system comprising a hybrid projection objective of the previous embodiment and an illumination source selected from one of visible, UV, DUV, EUV and VUV wavelengths.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical scope of the present invention and the equivalent alternatives or modifications according to the technical solution and the inventive concept of the present invention within the technical scope of the present invention.

Claims (9)

1. A hybrid projection objective comprising: object plane (10), first speculum (14), second speculum (15) and image plane (20), first speculum (14) with second speculum (15) set up in object plane (10) and between image plane (20), first speculum (14) are close to image plane (20), second speculum (15) are close to object plane (10) its characterized in that object plane (10) with still be provided with aperture diaphragm (11), secondary imaging compensation diffraction element (12) and view field diaphragm (13) in order between second speculum (15), the central area of secondary imaging compensation diffraction element (12) is light tight region (120).
2. Hybrid projection objective according to claim 1, characterized in that: the aperture diaphragm (11), the secondary imaging compensation diffraction element (12), the field diaphragm (13), the first reflector (14) and the second reflector (15) are all arranged on the same optical axis, and all the elements are symmetrical relative to the optical axis.
3. Hybrid projection objective according to claim 1, characterized in that: the position of the field diaphragm (13) is the position of the primary imaging surface of the secondary imaging compensation diffraction element (12).
4. Hybrid projection objective according to claim 1, characterized in that: the first reflector (14) is a convex reflector protruding towards the object plane (10), and the second reflector (15) is a concave reflector concave towards the image plane (20).
5. Hybrid projection objective according to claim 1, characterized in that: the secondary imaging compensation diffraction element (12) comprises a plane substrate (121) and a diffraction film (122), wherein the diffraction film (122) is attached to the plane substrate (121).
6. Hybrid projection objective according to claim 5, characterized in that: the diffractive film (122) is a concentric band diffractive film having a plurality of concentric annular bands.
7. Hybrid projection objective according to claim 5, characterized in that: the diffraction film (122) is a photon sieve diffraction film which comprises a plurality of concentric annular zones and light-passing micropores distributed on the concentric annular zones.
8. A projection exposure apparatus characterized by: the projection exposure apparatus comprising a hybrid projection objective as claimed in any of claims 1 to 7.
9. An imaging system, characterized by: the imaging system comprises a hybrid projection objective according to any one of claims 1 to 7 and an illumination source selected from one of visible wavelengths, UV wavelengths, DUV wavelengths, EUV and VUV wavelengths.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012013748A1 (en) * 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Euv exposure apparatus
CN102636963A (en) * 2011-02-11 2012-08-15 Asml荷兰有限公司 Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
CN106030405A (en) * 2014-02-21 2016-10-12 保罗·谢勒学院 An imaging system in reflection mode using coherent diffraction imaging methods and using micro-pinhole and aperture system
CN105807573B (en) * 2014-12-31 2017-12-29 上海微电子装备（集团）股份有限公司 Apparatus and method for overlay error detection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012013748A1 (en) * 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Euv exposure apparatus
CN102636963A (en) * 2011-02-11 2012-08-15 Asml荷兰有限公司 Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
CN106030405A (en) * 2014-02-21 2016-10-12 保罗·谢勒学院 An imaging system in reflection mode using coherent diffraction imaging methods and using micro-pinhole and aperture system
CN105807573B (en) * 2014-12-31 2017-12-29 上海微电子装备（集团）股份有限公司 Apparatus and method for overlay error detection

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