CN111025467A - Tunable optical differentiator based on silicon-based metamaterial - Google Patents
Tunable optical differentiator based on silicon-based metamaterial Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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Abstract
The invention discloses a tunable optical differentiator based on a silicon-based metamaterial, which belongs to the field of integrated photonic devices and specifically comprises the following components: an input waveguide, a metamaterial waveguide, a straight waveguide and an output waveguide; the metamaterial waveguide comprises four metamaterial waveguide units, and the four metamaterial waveguide units are uniformly distributed by taking a transverse central shaft and a longitudinal central shaft of the straight waveguide as symmetrical shafts; the input waveguide and the output waveguide are symmetrically positioned on two sides of the metamaterial waveguide; the input waveguide transmits the incident beam to the metamaterial waveguide; the incident light beams are divided into n paths of light beams in the metamaterial waveguide, and after the state of a pixel block in each metamaterial waveguide unit is adjusted, the n paths of light beams are interfered to form a transmission spectrum with large bandwidth, linear amplitude and phase jump; the straight waveguide is used for connecting the four metamaterial waveguide units; the output waveguide is used for outputting a transmission spectrum; the invention realizes THz-level differential bandwidth, expands bandwidth for processing optical signals and realizes adjustable central wavelength.
Description
Technical Field
The invention belongs to the field of integrated photonic devices, and particularly relates to a tunable optical differentiator based on a silicon-based metamaterial.
Background
Since the 21 st century, people have gradually entered the information age due to rapid development of computer technology, microelectronics technology, and communication technology, and the demand for information in contemporary society has reached unprecedented heights. As the capacity, bandwidth and rate requirements for communications have increased dramatically, electronic technology-based communication networks have nearly reached speed limits and processing of signals in the electrical domain has become increasingly difficult. The all-optical operation utilizes the photon technology to realize the generation and the processing of signals, and the inherent characteristics of high bandwidth and high speed of photon signals are expected to overcome the speed bottleneck in electronic circuits. To achieve this goal, basic modules in the optical field corresponding to those in electronic circuits need to be designed and fabricated. The optical differentiator is one of basic devices for processing ultrafast optical signals, can generate differential operation on ultrahigh-speed optical signals, and has important application in optical pulse recombination and shaping, ultrahigh-speed coding, all-optical differential equation solution and the like.
The silicon-based optical device has a submicron structural size, and the manufacturing process of the silicon-based optical device is compatible with a standard integrated circuit process, so that the silicon-based optical device is expected to become a promising material system for all-optical operation. The scheme based on the silicon-based optical differentiator mainly focuses on utilizing the micro-ring resonant cavity and the Mach-Zehnder interferometer to realize differentiation of optical signals, but is limited by the characteristics of an interference structure, the differential bandwidth of the optical differentiator is about dozens of GHz, and the processing of the differentiator on THz-level large-bandwidth optical signals is limited. In addition, the optical time domain differentiator based on the directional coupler reported in the literature can achieve a differentiation bandwidth reaching the THz level in a critical full coupling state, but once the device is prepared, the central wavelength of the differentiator is determined, so that the flexibility of optical signal processing is reduced.
The silicon-based metamaterial structure can be used for designing devices with various functions by utilizing the refractive index regulating and controlling capability of Sub-Wavelength gratings (SWG) on the silicon-based waveguide material. The structural period of the SWG is in a submicron level, the period is usually less than three hundred nanometers, the refractive index change of the SWG can enable the light wave not to be affected by scattering loss, and for the light wave, the SWG is equivalent to an equivalent silicon-based metamaterial, and the refractive index of the SWG is between two materials (usually silicon and air) forming the SWG. By reasonably designing the structure of the silicon-based metamaterial area SWG, the size of the device can be reduced, the integration level of the device can be improved, and an ultra-small device with a specific function can be realized.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a tunable optical differentiator based on a silicon-based metamaterial, and aims to solve the problems that the bandwidth of the conventional silicon-based optical differentiator is narrow and the central wavelength of a transmission spectrum is not tunable.
In order to achieve the above object, the present invention provides a tunable optical differentiator based on silicon-based metamaterial, comprising: an input waveguide, a metamaterial waveguide, a straight waveguide and an output waveguide;
the metamaterial waveguide comprises four metamaterial waveguide units, and the four metamaterial waveguide units are uniformly distributed by taking a transverse central shaft and a longitudinal central shaft of the straight waveguide as symmetrical shafts; the input waveguide and the output waveguide are symmetrically positioned on two sides of the metamaterial waveguide; the input waveguide transmits the incident beam to the metamaterial waveguide;
the incident light beams are divided into n paths of light beams in the metamaterial waveguide, and after the state of a pixel block in each metamaterial waveguide unit is adjusted, the n paths of light beams are interfered to form a transmission spectrum with THz-level bandwidth, linear amplitude and phase jump; the straight waveguide is used for connecting the four metamaterial waveguide units; the output waveguide is used for outputting a transmission spectrum; the silicon-based refractive indexes of the metamaterial waveguide and the straight waveguide are changed, and the adjustment of the central wavelength of the transmission spectrum is realized; wherein n is more than or equal to 2.
Preferably, the height of the input waveguide, the height of the metamaterial waveguide, the height of the straight waveguide and the height of the output waveguide are equal, and the input waveguide, the metamaterial waveguide, the straight waveguide and the output waveguide are all buried waveguide structures formed by a silica upper cladding layer, a silica waveguide layer and a silica lower cladding layer.
Preferably, the waveguide widths of the input waveguide and the output waveguide are: w is more than or equal to 0.45 mu m and less than or equal to 0.6 mu m, and the value range is the value range of the single-mode waveguide;
preferably, the metamaterial waveguide unit comprises N × M square pixel blocks, and M > N;
preferably, the side length of the pixel block is: lambda is more than or equal to 0.1 mu m and less than or equal to 0.2 mu m, and the value range is the value interval of the sub-wavelength structure period;
preferably, the length of the straight waveguide is: l is more than or equal to 10 and less than or equal to 20;
preferably, the state of the pixel block is center-perforated or center-unpunched;
preferably, the radius R of the central through hole of the pixel block with the center punched is as follows: r is more than or equal to 0.45 mu M and less than or equal to 0.5 mu M, a through hole array meeting the binary optimization method is formed, and a subminiature sub-wavelength interference structure is formed by optimizing the state of N × M pixel blocks, so that the optical differential effect is realized.
Preferably, the binary optimization method is a direct binary method or a genetic method;
preferably, the method for adjusting the state of the pixel block is as follows:
(1) randomly initializing the central punching state of the pixel block;
(2) calculating a transmission spectrum output after the incident beam passes through the metamaterial waveguide and the straight waveguide initialized in the step (1);
(3) comparing the calculated output transmission spectrum with the amplitude and phase curve of the target output light beam to obtain an output error between the transmission spectrum and the target output light beam;
(4) traversing each pixel block row by row and column by column, and if the state of the pixel block is changed and the output error is reduced, keeping the state of the changed pixel block; otherwise, restoring the state of the pixel block before the change;
(5) and repeatedly scanning the states of all the pixel blocks until the state of any one pixel block is changed and the output error cannot be reduced, stopping repeating and obtaining the state of the final pixel block.
Preferably, the method for changing the silicon-based refractive index of the metamaterial waveguide and the straight waveguide comprises the following steps: a carrier injection method or a heating method, but not limited to the above two methods.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
(1) the metamaterial waveguide provided by the invention is composed of a plurality of pixel blocks, the side length range of each pixel block is the period of a sub-wavelength structure, the state of the pixel block in each metamaterial waveguide unit is designed by a binary optimization method, the error between an output optical field and a target optical field is reduced, a subminiature sub-wavelength interference structure is formed, the THz-level differential bandwidth is realized, and the bandwidth for processing optical signals is expanded.
(2) The tunable optical differentiator based on the silicon-based metamaterial provided by the invention can realize the adjustability of the central wavelength of the differentiator by changing the silicon-based refractive indexes of the metamaterial waveguide and the straight waveguide, and has the advantages of good manufacturing tolerance, simple process and the like.
Drawings
FIG. 1 is a schematic structural diagram of a tunable optical differentiator based on a silicon-based metamaterial according to the present invention;
FIG. 2 is a schematic cross-sectional view at an input waveguide provided by the present invention;
FIG. 3(a) is an amplitude curve of the target optical differentiator provided in example 1;
FIG. 3(b) is a phase curve of the objective optical differentiator provided in example 1;
FIG. 4(a) is a block state of a random initialization pixel provided in embodiment 1;
FIG. 4(b) is the optimized pixel block state provided in example 1;
FIG. 5(a) is a plot of the magnitude of the optimized transmission spectrum provided in example 1;
FIG. 5(b) is a transmittance curve of the optimized transmission spectrum provided in example 1;
FIG. 5(c) is a phase curve of the optimized transmission spectrum provided in example 1;
FIG. 6(a) is a schematic diagram of the differentiation of a Gaussian optical input signal of 20ps provided in example 1;
FIG. 6(b) is a schematic diagram of the differentiation of a Gaussian optical input signal of 10ps provided in example 1;
FIG. 6(c) is a schematic diagram of the differentiation of a Gaussian optical input signal of 5ps provided in example 1;
FIG. 6(d) is a schematic diagram of the differentiation of a Gaussian optical input signal of 2ps provided in example 1;
FIG. 7(a) is a schematic diagram of the transmittance tuning of the transmission spectrum provided in example 1;
fig. 7(b) is a schematic diagram of phase tuning of the transmission spectrum provided in example 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the invention discloses a tunable optical differentiator based on silicon-based metamaterial, comprising: an input waveguide, a metamaterial waveguide, a straight waveguide and an output waveguide;
the metamaterial waveguide comprises four metamaterial waveguide units (such as 1, 2, 3 and 4 in fig. 1), and the four metamaterial waveguide units are uniformly distributed by taking a transverse central axis and a longitudinal central axis of the straight waveguide as symmetric axes; the input waveguide and the output waveguide are symmetrically positioned on two sides of the metamaterial waveguide; the input waveguide transmits the incident beam to the metamaterial waveguide;
the incident light beams are divided into n paths of light beams in the metamaterial waveguide, and after the state of a pixel block in each metamaterial waveguide unit is adjusted, the n paths of light beams are interfered to form a transmission spectrum with large bandwidth, linear amplitude and phase jump; the straight waveguide is used for connecting the four metamaterial waveguide units; the output waveguide is used for outputting a transmission spectrum; the silicon-based refractive indexes of the metamaterial waveguide and the straight waveguide are changed, and the adjustment of the central wavelength of the transmission spectrum is realized; wherein n is more than or equal to 2.
Preferably, as shown in fig. 2, the height of the input waveguide, the height of the metamaterial waveguide, the height of the straight waveguide and the height of the output waveguide are equal, and all the buried waveguide structures are composed of a silica upper cladding layer, a silicon waveguide layer and a silica lower cladding layer.
Preferably, the waveguide widths of the input waveguide and the output waveguide are: w is more than or equal to 0.45 mu m and less than or equal to 0.6 mu m, and the value range is the value range of the single-mode waveguide;
preferably, the metamaterial waveguide unit comprises N × M square pixel blocks, and M > N;
preferably, the side length of the pixel block is: lambda is more than or equal to 0.1 mu m and less than or equal to 0.2 mu m, and the value range is the value interval of the sub-wavelength structure period;
preferably, the length of the straight waveguide is: l is more than or equal to 10 and less than or equal to 20;
preferably, the state of the pixel block is center-perforated or center-unpunched;
preferably, the radius R of the central through hole of the pixel block with the center punched is as follows: r is more than or equal to 0.45 mu M and less than or equal to 0.5 mu M, a through hole array meeting the binary optimization method is formed, and a subminiature sub-wavelength interference structure is formed by optimizing the state of N × M pixel blocks, so that the optical differential effect is realized.
Preferably, the binary optimization method is a direct binary method or a genetic method;
preferably, the method for adjusting the state of the pixel block is as follows:
(1) randomly initializing the central punching state of the pixel block;
(2) calculating transmission spectrums output by the metamaterial waveguide and the straight waveguide after the incident beam is initialized in the step (1);
(3) comparing the calculated output transmission spectrum with the amplitude and phase curve of the target output light beam to obtain an output error between the transmission spectrum and the target output light beam;
(4) traversing each pixel block row by row and column by column, and if the state of the pixel block is changed and the output error is reduced, keeping the state of the changed pixel block; otherwise, restoring the state of the pixel block before the change;
(5) and repeatedly scanning the states of all the pixel blocks until the state of any one pixel block is changed and the output error cannot be reduced, stopping repeating and obtaining the state of the final pixel block.
Preferably, the method for changing the silicon-based refractive index of the metamaterial waveguide and the straight waveguide comprises the following steps: a carrier injection method or a heating method, but not limited to the above two methods.
Example 1
The height of the input waveguide, the metamaterial waveguide, the straight waveguide and the output waveguide is 220nm, the waveguide width W of the input waveguide and the output waveguide is 0.5 mu m, and the W is a typical value of a single-mode waveguide;
the metamaterial waveguide is composed of 15-by-20 square pixel blocks of four superconducting material waveguide units, pixel blocks are vertically symmetrical about a central shaft of the tunable optical differentiator and are arranged on the left side and the right side of the straight waveguide, the whole pixel blocks are bilaterally symmetrical about the straight waveguide to form the metamaterial waveguide with a symmetrical structure, and a strip-shaped metamaterial waveguide region is integrally formed;
the pixel blocks are closely arranged in each metamaterial waveguide unit along the horizontal direction and the vertical direction, and the side length lambda of the pixel blocks is as follows: Λ is 0.13 μm, which is a typical value of the subwavelength structure period;
the width of the straight waveguide is determined by the number and the size of the pixel blocks, in order to ensure that the small holes of the pixel blocks are not etched through, in the embodiment, a silicon material is added on the outer side of the metamaterial waveguide, the thickness of the silicon material is 60nm, the width of the straight waveguide is 4.02 mu m, and the length L of the straight waveguide is 1.3 mu m, so that the overall size of the tunable optical differentiator is reduced;
the state of the pixel block comprises center punching and center non-punching, specifically, the radius R of the center through hole of the punched pixel block is taken as: and R is 0.45 mu m, a through hole array meeting the binary optimization method is formed, and a subminiature interference structure is formed by optimizing the state of 15 × 20 pixel blocks to realize the optical differential effect.
The transfer function expression of an ideal optical differentiator is:
H(w)＝(j(w-w0))N
wherein, w0For a center frequency, N is the order of the optical differentiator, for a first order (N ═ 1) optical differentiator, the amplitude spectrum varies linearly with frequency, with zero amplitude response at the center optical carrier frequency, while the phase spectrum has a phase jump of pi at the center optical carrier frequency. Specifically, the amplitude and phase curves of the ideal first-order differentiator of embodiment 1 are shown in fig. 3(a) and 3(b), and theoretically, the differentiator has a 3dB bandwidth of 12nm, can perform differentiation on a signal with a THz-order bandwidth, and has a center wavelength of 1550 nm.
The binary optimization algorithm of the pixel block state can be a direct binary method, a genetic method and the like, and the states of 15 × 20 pixel blocks are changed through several iterations aiming at the amplitude value and phase difference between the existing simulation output and an ideal differentiator, so that a through hole array meeting the requirements is finally obtained.
In embodiment 1, a direct binary algorithm is selected to optimize the state of 15 × 20 pixel blocks, and the specific steps are as follows: randomly initializing the central perforation state of the pixel block to form an initial pixel block structure, as shown in fig. 4(a), calculating the amplitude and phase curves of the output optical field (transmission spectrum) of the incident light beam after passing through the metamaterial waveguide and the straight waveguide, comparing the amplitude and phase curves with the amplitude and phase curves of the ideal differentiator in fig. 3(a) and fig. 3(b), and calculating the output error; and traversing all the pixel blocks line by line and column by column in sequence, if the state of the pixel block is changed to reduce the output error, the pixel block is kept in the state which is closer to the ideal differentiator effect, and otherwise, the state of the pixel block is restored. The scanning of the states of all the pixel blocks is repeated for several times until the change of the state of any one pixel block is not enough to reduce the output error, and the circulation is stopped, so that the distribution of the point punching state in the final pixel block is obtained as shown in fig. 4 (b).
Fig. 5(a), 5(b), 5(c) are the amplitude, transmittance and phase curves of the optimized transmission spectrum provided in example 1, respectively, the optimized structure amplitude is approximately zero at the central wavelength of 1550nm of the incident beam, the phase has pi phase jump at 1550nm, the frequency response is linear in the range of about 10nm, i.e. 1.25THz, and the whole tunable optical differentiator has an extra loss of about 4 dB.
Fig. 6(a) to 6(d) are schematic diagrams of the differentiation of the gaussian time domain optical input signals with different pulse widths (20ps, 10ps, 5ps, 2ps) in embodiment 1, where the smaller the pulse width of the gaussian pulse, the wider the signal spectrum, and the wider the processing bandwidth of the required differentiator, the tunable optical differentiator optimized in the present invention can implement the differentiation function on the picosecond-level gaussian pulse.
Fig. 7(a) and 7(b) are schematic diagrams of transmittance and phase tuning of the transmission spectrum provided in example 1, and tuning of the center wavelength of the differentiator can be achieved by changing the silicon-based refractive index of the metamaterial waveguide and the straight waveguide in the modes of carrier injection, heating and the like, wherein the refractive index tuning is changed by 0.01, and the center wavelength is changed by 4 nm. In summary, the tunable optical differentiator provided by the present invention has the following advantages:
the metamaterial waveguide provided by the invention is composed of a plurality of pixel blocks, the side length range of each pixel block is the period of a sub-wavelength structure, the state of the pixel block in each metamaterial waveguide unit is designed by a binary optimization method, the error between an output optical field and a target optical field is reduced, a subminiature sub-wavelength interference structure is formed, the THz-level differential bandwidth is realized, and the bandwidth for processing optical signals is expanded.
The tunable optical differentiator based on the silicon-based metamaterial provided by the invention can realize the adjustability of the center wavelength of the differentiator by changing the silicon-based refractive indexes of the metamaterial waveguide and the straight waveguide, improves the flexibility of processing optical signals, and has the advantages of good manufacturing tolerance, simple process and the like.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A tunable optical differentiator based on a silicon-based metamaterial is characterized by comprising an input waveguide, a metamaterial waveguide, a straight waveguide and an output waveguide;
the metamaterial waveguide comprises four metamaterial waveguide units, and the four metamaterial waveguide units are uniformly distributed by taking a transverse central shaft and a longitudinal central shaft of the straight waveguide as symmetric axes; the input waveguide and the output waveguide are symmetrically positioned on two sides of the metamaterial waveguide; the input waveguide transmits an incident beam to the metamaterial waveguide;
the metamaterial waveguide is internally divided into n paths of light beams, and after the state of a pixel block in each metamaterial waveguide unit is adjusted, the n paths of light beams are interfered to form a differential transmission spectrum with THz-level bandwidth, linear amplitude and phase jump; the straight waveguide is used for connecting the four metamaterial waveguide units; the output waveguide is used for outputting the transmission spectrum; changing silicon-based refractive indexes of the metamaterial waveguide and the straight waveguide to realize adjustment of the central wavelength of the transmission spectrum; wherein n is more than or equal to 2.
2. The tunable optical differentiator of claim 1, wherein the height of the input waveguide, the metamaterial waveguide, the straight waveguide, and the output waveguide are equal; and each includes a silica upper cladding layer, a silicon waveguide layer, and a silica lower cladding layer.
3. The tunable optical differentiator of claim 1 or 2, wherein the waveguide width of the input waveguide and the output waveguide is 0.45 μm W0.6 μm.
4. The tunable optical differentiator of claim 1, wherein the metamaterial waveguide unit comprises N x M square pixel blocks, and M > N.
5. The tunable optical differentiator of claim 4, wherein the side length of the block of pixels is 0.1 μm ≦ Λ ≦ 0.2 μm; the length of the straight waveguide is 10 lambda-L-20 lambda.
6. The tunable optical differentiator of claim 5, wherein the state of the pixel block is center-perforated or center-unpunched.
7. The tunable optical differentiator of claim 6, wherein the center perforated pixel block center via radius R is 0.45 μm R0.5 μm.
8. The tunable optical differentiator of any of claims 4 to 7, wherein the method of adjusting the state of the pixel blocks comprises:
(1) randomly initializing the central punching state of the pixel block;
(2) calculating a transmission spectrum output after the incident beam passes through the metamaterial waveguide and the straight waveguide initialized in the step (1);
(3) comparing the calculated output transmission spectrum with the amplitude and phase curve of the target output light beam to obtain an output error between the transmission spectrum and the target output light beam;
(4) traversing each pixel block row by row and column by column, and if the state of the pixel block is changed and the output error is reduced, keeping the state of the changed pixel block; otherwise, restoring the state of the pixel block before the change;
(5) and repeatedly scanning the states of all the pixel blocks until the state of any one pixel block is changed and the output error cannot be reduced, stopping repeating and obtaining the state of the final pixel block.
9. The tunable optical differentiator of claim 1, wherein the method of changing the silicon-based refractive index of the metamaterial waveguide and the straight waveguide is: carrier injection or thermal methods.
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