CN111013970A - Oxidation, sintering and film coating integrated device for producing high-purity Dumet wire coating layer - Google Patents
Oxidation, sintering and film coating integrated device for producing high-purity Dumet wire coating layer Download PDFInfo
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- CN111013970A CN111013970A CN201811176680.7A CN201811176680A CN111013970A CN 111013970 A CN111013970 A CN 111013970A CN 201811176680 A CN201811176680 A CN 201811176680A CN 111013970 A CN111013970 A CN 111013970A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0406—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
Abstract
The invention discloses an oxidation, sintering and film coating integrated device for producing a high-purity Dumet wire coating layer, which comprises a cleaning opening and Cu2The device comprises an O-wrapping layer production screen, a wire guiding constant speed wheel, a wire dividing wheel, an upper electrode guide wheel, an integrated mixed gas reaction, a sintering chamber, a lower electrode guide wheel, a PVA solution infiltration tank, a wind-heat system and a synchronous constant speed take-up wheel. The novel system provided by the invention saves energy, simultaneously ensures that the surface of the Dumet wire material can generate 100% cuprous oxide at a high speed and the surface can be sintered in the same chamber immediately without generating the condition of copper oxide factors; coating the PVA antioxidant film layer without gaps, and drying the PVA antioxidant film layer by a hot air source immediately; improve the quality of Dumet wire.
Description
Technical Field
The invention belongs to the field of sealing manufacture of semiconductors, electric vacuum devices and lighting fixtures, and relates to a nano ultra-high-purity Cu for sealing an electro-optical source semiconductor seal, an electric vacuum device and a lighting fixture2The manufacturing of O Dumet wire material, in particular to an oxidation, sintering and film coating integrated device for producing a high-purity Dumet wire coating layer.
Background
Production of Cu from red, white, yellow, boron-free Dumet wire2When the O process isAt H2Or in the liquefied petroleum gas environment, the alloy is prepared by heating to 850-1400 ℃ by common power frequency and then coating or sintering without coating, and Cu is generated by slow heating2The coating or uncoated resintering process technology after O generally separates an oxidation furnace for generating cuprous oxide on the surface coating layer of the Dumet wires from a sintering furnace for sintering the process after generating cuprous oxide, and the process has the defects that the cuprous oxide generated on the surface coating layer of the Dumet wires in the oxidation furnace is not actually ensured to generate 100 percent of cuprous oxide because the surface temperature of the wires is moved to be above 400 ℃ when the wires are transited to the clearance of the sintering furnace, or the surface of the Dumet wires is observed to be more or less in a fine crack shape under a microscope, because the surface of the Dumet wires is changed into a proportion factor of the cupric oxide when the wires are not sintered and are in short-time contact with air, the sintering process of the sintering furnace does not perform seamless coating of a PVA antioxidant film and drying of a hot air source, and the production technology has congenital defects for controlling the quality of the Dumet wires, the 100% compactness and special storage conditions of the finished Dumet wire used for sealing the semiconductor and the lighting lamp glass are easily influenced, so that the quality instability factor of downstream products is improved, and the overall social and economic benefits are reduced. Meanwhile, the method for producing the Dumet wire is to place the hollow quartz glass tube in the high-temperature atmosphere of the heating furnace and apply the high-temperature atmosphere which causes the generation of Cu2The gas O can shorten the service life of the hollow quartz glass tube, and the hollow quartz glass tube is generally discarded after being used for no more than 170 hours, so the production cost and the quality control become the bottleneck of occupying the market share of the product.
Therefore, the existing dumet wire production process in the market has the following problems to be improved: 1, cleaning harmful oxides and dirt on the surface of a cleaning silk by a silk surface chemical method and forming secondary pollution to the environment after washing by running water; 2, oxidizing the single-type split liquefied petroleum gas, a power frequency electric furnace, a high-frequency induction furnace, a microwave source and other heating source oxidizing furnaces to generate Cu2After the O method, the gap is transited to a sintering furnace for sintering, and the interval process leads to the generation of Cu2Copper oxide exists on the surface of the O-plated wire, and the nano-scale Cu on the surface of the wire is influenced2O purity and bond strength, directly leading to shortened service life of downstream products; 3, original process sintering of Cu2The O-wrapping layer is easy to fall off and crack when the O-wrapping layer is used by a user subsequently, the surface of the Dumet wire is observed to be more or less in a fine crack shape under a microscope, certain storage and storage period is reserved, the product storage period is long, and the rejection rate risk of the finished Dumet wire is increased; 4, producing the high-purity nano-scale surface coating Cu2The O-Dumet wire is prepared by placing hollow quartz glass tube in high temperature atmosphere of heating furnace, and applying a solution which causes Cu to be generated2The gas O can shorten the service life of the hollow quartz glass tube, and the hollow quartz glass tube is generally discarded after being used for no more than 170 hours, so the production cost and the quality control become the bottleneck of occupying the market share of the product.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the defects of the prior art, the invention provides a method for greatly improving Cu on the surface of a Dumet wire2And (3) an oxidation, sintering and coating integrated device for the purity of the O coating layer.
The technical scheme is as follows: the invention relates to an oxidation, sintering and film coating integrated device for producing a high-purity Dumet wire coating layer, which comprises a cleaning opening and Cu2O-coating production screen, guide wire constant speed wheel, wire separating wheel, upper electrode guide wheel, integrated mixed gas reaction, sintering chamber, Cu2The O reaction and sintering integrated program control chamber, the lower electrode guide wheel, the PVA solution infiltration tank, the wind-heat system and the synchronous constant-speed take-up wheel are fed with cleaned wires from a cleaning port and enter the Cu2Screens produced with O-cladding on Cu2The production screen of the O wrapping layer is internally provided with a wire guide constant speed wheel, a wire separating wheel, an upper electrode guide wheel, an integrated mixed gas reaction, a sintering chamber, a lower electrode guide wheel, a PVA solution infiltration tank, a wind-heat system and a synchronous constant speed take-up wheel in sequence to finish the Cu2O-coating and film-coating, Cu2O reaction and sintering process from Cu2And carrying out control of an integrated program control chamber for O reaction and sintering.
Furthermore, the integrated mixed gas reaction and sintering chamber comprises a gas reaction tube, a magnetic control cavity and a magnetic control cavity inner container, wherein a wire inlet and a wire outlet are respectively arranged at two ends of the gas reaction tube, and a mixed gas inlet and a mixed gas outlet are arranged at the inlet end of the gas reaction tube; the outer side of the gas reaction tube is covered with the magnetic control cavity inner container, the outer side of the magnetic control cavity inner container is provided with the magnetic control cavity, and the outer side of the integrated mixed gas reaction and sintering chamber is covered with a shielding shell; the utility model discloses a wire material, including the silk material, the silk material is gone into the export and is equipped with the body of sealing, the body of sealing is the frustum structure, and the microcephaly end stretches to inside the clean safety cover, the body center of sealing sets up the silk thread guiding hole, the silk material by the guiding hole penetrates and wears out.
Further, to better control Cu2Wire feeding stability in the O-wrapping layer generation process is achieved, so that the production quality of the Dumet wire is improved, and a speed measurement feedback encoder is arranged on the wire guide constant speed wheel.
Furthermore, in order to avoid the problem of low product quality caused by unstable guiding and conveying speed in the wire guiding process, the wire guiding constant speed wheel is also provided with a group of elastic automatic damping pinch rollers, each elastic automatic damping pinch roller comprises a first pressing arm, a second pressing arm and a pinch roller, the first pressing arm and the second pressing arm are respectively arranged on two sides of the pinch roller, one end of each elastic automatic damping pinch roller is connected with a pinch roller rotating shaft, and the other ends of the first pressing arm and the second pressing arm are fixed on the Cu through rotating shafts2On the O parcel layer production screen, the junction of first pressure arm, second pressure arm and pinch roller pivot still is equipped with elastomeric element, realizes that the pinch roller sticiss on the seal wire constant speed wheel.
Further, for improving the stability of receipts silk process, synchronous constant speed take-up pulley still disposes rotary type pressure damping device, rotary type pressure damping device is located synchronous constant speed take-up pulley directly over, rotary type pressure damping device includes the pivot that a set of isosceles triangle set up, and the gyro wheel is established to the cover in the pivot, and conveyer is established to the cover on the gyro wheel, and rotary type pressure damping device's bottom belt segment encircles on synchronous constant speed take-up pulley, and rotary type pressure damping device is the rotation at constant speed, realizes the damping adjustment to synchronous constant speed take-up pulley through conveyer, makes synchronous constant speed take-up pulley constant speed rotate.
Further, in order to increase Cu on the surface of the Dumet wire2The generation quality of the O-wrapping layer can maximally reduce the influence of external unstable factors, soThe mixed gas inlet is connected with the input pipeline of each path of gas, the input pipeline and the output pipeline of each path of gas are provided with an intelligent gas flow meter, the pressure of the mixed gas inlet is always greater than the pressure of the mixed gas outlet, and the flow rate precision is monitored to be 0.001 ml/min.
Furthermore, in order to improve the surface cleanliness of the wire and further improve the quality of the Dumet wire, the wire plasma ultra-purification device is also included, the wire plasma ultra-purification device is positioned at the upstream of the cleaning port, the wire plasma ultra-purification device comprises a cleaning protective cover, a wire inlet and a wire outlet are formed in the cleaning protective cover, the cleaning protective cover is connected with a microwave source, the microwave source and a direct current power source form double specific frequency differences, and the microwave source and the direct current power source are controlled by a programmable power supply to supply the integrated mixed gas to react, a sintering chamber and the plasma ultra-purification device; all be equipped with in silk material entry and the silk material export and seal the body, seal the body and be the frustum structure, the microcephaly end stretches to inside the clean safety cover, seal the body center and set up silk thread guiding hole, the silk material by the guiding hole penetrates and wears out.
Furthermore, the frequency difference range of the microwave source and the direct current power supply is 2455MHZ-100 KHZ.
Furthermore, the device is also internally provided with a laser temperature detector, a color temperature sensor, a gas flow controller and a temperature sensor, wherein the laser temperature detector, the color temperature sensor, the gas flow controller and the temperature sensor are connected with the PLC intelligent control system and are intelligently controlled by the PLC intelligent control system.
Further, in order to avoid the problem that wires deform due to the influence of external force in the wire winding process of the Dumet wires, a wire guiding and straightening assembly is further arranged at the downstream of the synchronous constant-speed wire winding wheel and fixed to the Cu2On the O wrapping layer production screen, the guide straightening component comprises a rotatable shaping straightening rubber compression roller, a guide pipe fixing hoop and a support plate; the guide pipe is positioned at the downstream of the rotatable shaping and straightening rubber press roller, and the support plate is fixed on the Cu2On the O parcel layer production screen, the stand pipe is fixed through the fixed hoop of a set of stand pipe in the backup pad.
Has the advantages that: book (I)The oxidation, sintering and coating integrated device of the high-purity Dumet wire coating layer provided by the invention mainly changes four aspects on the summary of the original production process and the specific implementation method: firstly, combining an original split type oxidation furnace for generating cuprous oxide and a sintering furnace into a whole; secondly, a bottleneck of 100% of the ultrapure degree of the cuprous oxide of the surface coating layer of the Dumet wire is solved by applying a dual-frequency program control power supply integrated frequency differential method; thirdly, a plasma metal surface treatment technology is added to remove dirt and activate the surface of the raw material Dumet wire; fourthly, adding ultra-high purity Cu2And (3) seamless PVA coating after O sintering is coated with the antioxidant film coating. The beneficial benefits of doing so are: firstly, saving energy, and simultaneously enabling the surface of the Dumet wire to generate 100% cuprous oxide at a very high speed and the surface to be sintered in the same chamber without generating copper oxide factors; secondly, the surface of the sintered and cured 100% cuprous oxide dumet wire is coated with a PVA antioxidant film layer without gaps when not contacted with air, and is dried by a hot air source immediately; thirdly, the product process structure is further optimized, and the self-energy degree of the equipment and the energy utilization rate level are fully improved.
Drawings
FIG. 1 is a schematic view of the overall structure of the apparatus of the present invention;
wherein: 1. cleaning of the mouth, 2, Cu2An O coating layer production screen, 3, a guide wire constant speed wheel, 4, a wire separating wheel, 5, an upper electrode guide wheel, 6, an integrated mixed gas reaction and sintering chamber, 61, a gas reaction tube, 62, a magnetic control cavity, 63, a magnetic control cavity inner container, 64, a mixed gas inlet, 65, a shielding shell, 66, a sealing body, 67, a mixed gas outlet, 7, a lower electrode guide wheel, 8, a PVA solution infiltration tank, 9, a wind heat system, 10, the wire winding machine comprises a synchronous constant-speed wire winding wheel 31, a first pressing arm 32, a second pressing arm 33, a pressing wheel 11, a PLC intelligent control system 12, a wire plasma ultra-purification processor 121, a cleaning protective cover 13, a guide straightening component 131, a rotatable setting straightening rubber pressing roller 132, a guide pipe 133, a guide pipe fixing hoop 134, a supporting plate 14, a rotatable pressure damping device 141, a roller 142, a conveying belt 15 and wires.
Detailed Description
The technical solution of the present invention is described in detail below with reference to the accompanying drawings, but the scope of the present invention is not limited to the embodiments.
Example 1: an oxidation, sintering and film coating integrated device for producing a high-purity Dumet wire coating layer comprises a cleaning opening 1 and Cu2An O-coated layer production screen 2, a guide wire constant speed wheel 3, a wire separating wheel 4, an upper electrode guide wheel 5, an integrated mixed gas reaction and sintering chamber 6, and a Cu2An O reaction and sintering integrated program control chamber, a lower electrode guide wheel 7, a PVA solution infiltration tank 8, a wind-heat system 9 and a synchronous constant-speed take-up wheel 10, wherein cleaned wires 15 are fed from a cleaning port 1 and enter a Cu2Production of screens 2 in the O-cladding layer, in Cu2The production screen of the O wrapping layer sequentially passes through a wire guide constant speed wheel 3, a wire separating wheel 4, an upper electrode guide wheel 5, an integrated mixed gas reaction and sintering chamber 6, a lower electrode guide wheel 7, a PVA solution infiltration tank 8, a wind-heat system 9 and a synchronous constant speed take-up wheel 10 to complete the Cu wrapping layer production2O wrapping and film coating; cu2O reaction and sintering process from Cu2The control of an integrated program control chamber for O reaction and sintering is carried out; the guide wire constant speed wheel 3 is provided with a speed measurement feedback and encoder.
The guide wire constant speed wheel 3 is also provided with a group of elastic automatic damping pinch rollers, each elastic automatic damping pinch roller comprises a first pressure arm 31, a second pressure arm 32 and a pinch roller 33, the first pressure arm 31 and the second pressure arm 32 are respectively arranged on two sides of the pinch roller 33, one end of each elastic automatic damping pinch roller is connected with the pinch roller rotating shaft 33, and the other ends of the first pressure arm 31 and the second pressure arm 32 are fixed on the Cu2On the O-wrapping layer production screen 2, the joints of the first pressure arm 31, the second pressure arm 32 and the rotating shaft of the pressure wheel 33 are also provided with elastic parts which can be but not limited to springs or elastic sheets, so that the pressure wheel 33 is tightly pressed on the guide wire constant speed wheel 3. The system is also internally provided with a temperature detector and a temperature sensor, wherein the temperature detector and the temperature sensor are connected with the PLC intelligent control system 11 and are intelligently controlled through the PLC intelligent control system 11.
Synchronous constant speed take-up pulley 10 still sets rotary type pressure damping device 14, rotary type pressure damping device 14 is located synchronous constant speed take-up pulley 10 directly over, rotary type pressure damping device 14 includes the pivot that a set of isosceles triangle set up, and gyro wheel 141 is established to the cover in the pivot, and conveyer 142 is established to the cover on the gyro wheel, and rotary type pressure damping device's bottom belt segment encircles on synchronous constant speed take-up pulley 10, and rotary type pressure damping device 14 is the constant speed rotatory, realizes the damping adjustment to synchronous constant speed take-up pulley through conveyer, makes synchronous constant speed take-up pulley constant speed rotate
The integrated mixed gas reaction and sintering chamber 6 comprises a gas reaction tube 61, a magnetic control cavity 62 and a magnetic control cavity inner container 63, wherein a wire material inlet and a wire material outlet are respectively arranged at two ends of the gas reaction tube 61, and a mixed gas inlet 64 and a mixed gas outlet 67 are arranged at the inlet end of the gas reaction tube; the outer side of the gas reaction tube is covered with the magnetic control cavity inner container 63, the outer side of the magnetic control cavity inner container 63 is provided with the magnetic control cavity 62, and the outer side of the integrated mixed gas reaction and sintering chamber is covered with a shielding shell 65; sealing bodies 66 are arranged in the wire inlet and the wire outlet, the sealing bodies are of frustum structures, small end ends extend into the cleaning protective cover, a wire guide hole is formed in the center of the sealing bodies, and wires penetrate through the guide hole; the mixed gas inlet 64 is connected with the input pipelines of each path of gas, the input pipeline and the output pipeline of each path of gas are provided with an intelligent gas flow meter, the pressure of the mixed gas inlet is always greater than the pressure of the mixed gas outlet, and the flow rate precision is monitored to be 0.001 ml/min.
The wire plasma ultra-purification processor 12 is arranged at the upstream of the cleaning port 1 and comprises a cleaning protective cover 121, a wire inlet and a wire outlet are formed in the cleaning protective cover 121, the cleaning protective cover is connected with a microwave source, the microwave source and a direct current power source form double specific frequency differences, and the microwave source and the direct current power source are controlled by a programmable power supply to the integrated mixed gas reaction and sintering chamber and the plasma ultra-purification processor; the frequency difference range of the microwave source and the direct current power supply is 2455MHZ-100 KHZ; the power supply process is controlled by a system program control power supply; all be equipped with in silk material entry and the silk material export and seal the body, seal the body and be the frustum structure, the microcephaly end stretches to inside the clean safety cover, seal the body center and set up silk thread guiding hole, the silk material by the guiding hole penetrates and wears out.
A wire guiding and straightening component 13 is further arranged at the downstream of the synchronous constant-speed take-up pulley 10 and fixed on the Cu2On the O-wrapping layer production screen 2, the guide straightening assembly 13 comprises a rotatable shaping straightening rubber compression roller 131, a guide pipe 132, a guide pipe fixing hoop 133 and a support plate 134; the guide tube 132 is located downstream of the rotationally-shaped straightening rubber press roll 131, and the support plate 134 is fixed to Cu2On the O-wrap production panel 2, the guide tubes 132 are secured to the support plate 134 by a set of guide tube retaining clips 133.
In actual production, protofilaments are fed into a filament plasma ultra-purification processor through a filament feeding system, dirt removal and activation are carried out on the surfaces of the filaments under the action of plasma, the cleaned filaments are fed into a filament wrapping layer generating system, and bare filaments are inserted into an integrated mixed cuprous oxide reaction and sintering chamber within a specific frequency difference; after the surface coating layer of the Dumet wire in the reaction chamber preferentially generates the ultra-pure cuprous oxide, the surface is sintered without generating copper oxide factors; the integrated reaction and sintering chamber structure of the surface ultrafast heating and mixed gas of the Dumet wire material is the process of sintering without transition gap period, combining the transition gap by PVA surface antioxidant, drying and curing, and the ultra-pure Cu required by sealing of various semiconductors, electric vacuum devices and lighting glass is generated2O high-compactness nano-layer Dumet wire material; finally, the wire is fed into a wire collecting system and is collected into a drop-type synchronous wire collecting barrel through a guide straightening assembly, and the production and the winding of the ultra-high purity Dumet wire are completed.
As noted above, while the present invention has been shown and described with reference to certain preferred embodiments, it is not to be construed as limited thereto. Various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer is characterized in that: including cleaning of the mouth, Cu2O-coating production screen, guide wire constant speed wheel, wire separating wheel, upper electrode guide wheel and integrated mixed gas reactionSintering chamber, Cu2The O reaction and sintering integrated program control chamber, the lower electrode guide wheel, the PVA solution infiltration tank, the wind-heat system and the synchronous constant-speed take-up wheel are fed with cleaned wires from a cleaning port and enter the Cu2Screens produced with O-cladding on Cu2The production screen of the O wrapping layer is internally provided with a wire guide constant speed wheel, a wire separating wheel, an upper electrode guide wheel, an integrated mixed gas reaction, a sintering chamber, a lower electrode guide wheel, a PVA solution infiltration tank, a wind-heat system and a synchronous constant speed take-up wheel in sequence to finish the Cu2O-coating and film-coating, Cu2O reaction and sintering process from Cu2And carrying out control of an integrated program control chamber for O reaction and sintering.
2. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: the integrated mixed gas reaction and sintering chamber comprises a gas reaction tube, a magnetic control cavity and a magnetic control cavity inner container, wherein a wire material inlet and a wire material outlet are respectively arranged at two ends of the gas reaction tube, and a mixed gas inlet and a mixed gas outlet are arranged at the inlet end of the gas reaction tube; the outer side of the gas reaction tube is covered with the magnetic control cavity inner container, the outer side of the magnetic control cavity inner container is provided with the magnetic control cavity, and the outer side of the integrated mixed gas reaction and sintering chamber is covered with a shielding shell; the utility model discloses a wire material, including the silk material, the silk material is gone into the export and is equipped with the body of sealing, the body of sealing is the frustum structure, and the microcephaly end stretches to inside the clean safety cover, the body center of sealing sets up the silk thread guiding hole, the silk material by the guiding hole penetrates and wears out.
3. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: and a speed measurement feedback and encoder are arranged on the guide wire constant speed wheel.
4. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: the guide wire constant speed wheel is also provided with a group of elastic automatic damping pinch rollers, each elastic automatic damping pinch roller comprises a first pressure arm, a second pressure arm and a pinch roller, and the guide wire constant speed wheel is provided with a group of elastic automatic damping pinch rollersThe first pressure arm and the second pressure arm are respectively arranged on two sides of the pinch roller, one end of the first pressure arm is connected with the pinch roller rotating shaft, and the other ends of the first pressure arm and the second pressure arm are fixed on the Cu2On the O parcel layer production screen, the junction of first pressure arm, second pressure arm and pinch roller pivot still is equipped with elastomeric element, realizes that the pinch roller sticiss on the seal wire constant speed wheel.
5. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: synchronous constant speed take-up pulley still sets rotary type pressure damping device, rotary type pressure damping device is located synchronous constant speed take-up pulley directly over, rotary type pressure damping device includes the pivot that a set of isosceles triangle set up, and the gyro wheel is established to the cover in the pivot, and conveyer is established to the cover on the gyro wheel, and rotary type pressure damping device's bottom belt section encircles on synchronous constant speed take-up pulley, and rotary type pressure damping device is the fixed speed rotatory, realizes the damping adjustment to synchronous constant speed take-up pulley through conveyer, makes synchronous constant speed take-up pulley fixed speed rotate.
6. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: the mixed gas inlet is connected with the input pipeline of each path of gas, the input pipeline and the output pipeline of each path of gas are provided with an intelligent gas flow meter, the pressure of the mixed gas inlet is always greater than the pressure of the mixed gas outlet, and the flow precision of the monitored gas is up to 0.001 ml/min.
7. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: the wire plasma ultra-purification treatment device is positioned at the upstream of the cleaning port and comprises a cleaning protective cover, a wire inlet and a wire outlet are formed in the cleaning protective cover, the cleaning protective cover is connected with a microwave source, the microwave source and a direct current power source form double specific frequency differences, and the double specific frequency differences are controlled by a programmable power supply to supply the integrated mixed gas reaction, sintering chamber and plasma ultra-purification treatment device; all be equipped with in silk material entry and the silk material export and seal the body, seal the body and be the frustum structure, the microcephaly end stretches to inside the clean safety cover, seal the body center and set up silk thread guiding hole, the silk material by the guiding hole penetrates and wears out.
8. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 7 is characterized in that: the frequency difference range of the microwave source and the direct current power supply is 2455MHZ-100 KHZ.
9. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: the device is also internally provided with a laser temperature detector, a color temperature sensor, a gas flow controller and a temperature sensor, wherein the laser temperature detector, the color temperature sensor, the gas flow controller and the temperature sensor are connected with the PLC intelligent control system and are intelligently controlled through the PLC intelligent control system.
10. The oxidation, sintering and coating integrated device for producing the high-purity Dumet wire coating layer according to claim 1 is characterized in that: the lower stream of the synchronous constant-speed take-up pulley is also provided with a wire guiding and straightening assembly, and the guiding and straightening assembly is fixed on Cu2On the O wrapping layer production screen, the guide straightening component comprises a rotatable shaping straightening rubber compression roller, a guide pipe fixing hoop and a support plate; the guide pipe is positioned at the downstream of the rotatable shaping and straightening rubber press roller, and the support plate is fixed on the Cu2On the O parcel layer production screen, the stand pipe is fixed through the fixed hoop of a set of stand pipe in the backup pad.
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