CN111010115A - Bulk acoustic wave resonator, filter, electronic apparatus, and method of controlling temperature of resonator - Google Patents
Bulk acoustic wave resonator, filter, electronic apparatus, and method of controlling temperature of resonator Download PDFInfo
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- CN111010115A CN111010115A CN201910736096.0A CN201910736096A CN111010115A CN 111010115 A CN111010115 A CN 111010115A CN 201910736096 A CN201910736096 A CN 201910736096A CN 111010115 A CN111010115 A CN 111010115A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
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- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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Abstract
The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer; and a temperature control structure, wherein: the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; and the temperature control structure has a first terminal and a second terminal, and a temperature control layer connected between the first terminal and the second terminal, the temperature control layer has a resistance, and in a top view of the resonator, the temperature control layer surrounds or covers at least a portion of the active area. The invention also relates to a filter and an electronic device, and a temperature control method of the bulk acoustic wave resonator.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter, an electronic device having one of the above components, and a method of controlling a temperature of a bulk acoustic wave resonator.
Background
A Film Bulk Acoustic Resonator (FBAR, also called Bulk Acoustic Resonator, BAW) plays an important role in the field of communications as a MEMS chip, and an FBAR filter has excellent characteristics of small size (μm), high resonant frequency (GHz), high quality factor (1000), large power capacity, good roll-off effect, and the like, is gradually replacing a conventional Surface Acoustic Wave (SAW) filter and a ceramic filter, plays a great role in the field of radio frequency for wireless communications, and has the advantage of high sensitivity that can also be applied to the sensing fields of biology, physics, medicine, and the like.
The structural main body of the film bulk acoustic resonator is a sandwich structure consisting of an electrode, a piezoelectric film and an electrode, namely a piezoelectric film material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between the two electrodes, the FBAR converts the input electrical signal into mechanical resonance using the inverse piezoelectric effect, and converts the mechanical resonance into an electrical signal for output using the piezoelectric effect. Since the film bulk acoustic resonator mainly utilizes the longitudinal piezoelectric coefficient (d33) of the piezoelectric film to generate the piezoelectric effect, the main operation Mode thereof is a longitudinal wave Mode (TE Mode) in the Thickness direction.
The frequency of the bulk acoustic wave resonator changes along with the temperature change, and the elastic modulus of the material has a second-order temperature coefficient, so that the frequency of the resonator can present a parabolic characteristic along with the temperature change, namely the frequency can firstly rise and then fall along with the temperature rise. In other words, the change of the ambient temperature will affect the frequency of the resonator. Further, at a certain temperature (i.e., a predetermined temperature), the rate of change of the frequency with temperature is 0.
Disclosure of Invention
The invention provides a temperature control structure for controlling the temperature of a bulk acoustic wave resonator, which can flexibly and efficiently adjust the working temperature of the resonator, thereby reducing the frequency drift of the resonator caused by the change of the environmental temperature and obtaining a device with stable frequency. Particularly, based on the temperature control structure, the resonator can reach the specific temperature, so that the influence of the temperature change of the external environment on the frequency of the resonator is avoided. Even when the particular temperature cannot be reached by heating, the resonator can be operated at a temperature higher than the highest possible ambient temperature by heating the resonator, thereby reducing or eliminating the effect of fluctuations in ambient temperature on the resonator frequency.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
a piezoelectric layer; and
a temperature control structure is arranged on the base plate,
wherein:
the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; and is
The temperature control structure has a first terminal and a second terminal, and a temperature control layer connected between the first terminal and the second terminal, the temperature control layer having a resistance, and the temperature control layer surrounding or covering at least a portion of the active area in a top view of the resonator.
Optionally, the resonator further includes a temperature control unit, configured to control on/off of a current and/or a magnitude of the current in the first terminal and the second terminal.
Optionally, the temperature control layer is formed as a linear, generally annular structure. Further optionally, the ring-shaped structure is disposed around and adjacent to an edge of the active area. Further optionally, in the top view, the ring-shaped structure has the same or similar shape as the active area. Optionally, the wire is a linear annular wire or a curved annular wire.
Optionally, the temperature control layer forms a cover surface structure. Further optionally, in the top view, the cover surface structure has a structure that is the same as or similar to the shape of the active area.
Optionally, the covering surface structure is a spiral winding structure or a broken line structure of a single wire between the first terminal and the second terminal.
Optionally, the cover structure is a parallel structure, and the parallel structure has a first lead electrically connected to the first terminal, a second lead electrically connected to the second terminal, and a plurality of parallel connection lines connected in parallel between the first lead and the second lead. Further optionally, the first and second leads are parallel to each other; or the first lead and the second lead are arranged along the edge of the effective area, and the covering surface structure has the same or similar shape with the shape of the effective area; or the first lead extends to the middle position of the effective area, the second lead is arranged along the edge of the effective area and has the same or similar shape with the effective area, and the plurality of parallel connection lines are formed into a radial structure.
Optionally, the temperature control layer is provided in the piezoelectric layer, and further, provided substantially in the middle of the piezoelectric layer in the thickness direction of the piezoelectric layer; or the resonator further comprises a passivation layer covering the top electrode, the temperature control layer being disposed in the passivation layer; or a non-conductive structural layer is further arranged between the piezoelectric layer and the acoustic mirror, and the temperature control layer is arranged in the non-conductive structural layer.
Optionally, in the top view, the temperature control layer is located inside the edge of the bottom electrode and outside the edge of the acoustic mirror; or in the top view, the temperature control layer is positioned outside the top electrode edge and inside the acoustic mirror edge.
Optionally, in the top view, the temperature control layer is located inside the top electrode edge. Further, the distance of the temperature control layer from the edge of the top electrode is in the range of 0-20 μm, and/or the width of the temperature control layer is in the range of 0.5-20 μm.
Optionally, the temperature control layer is partially located outside the edge of the top electrode and partially located inside the edge of the top electrode, and further, the width of the temperature control layer is in the range of 0.5-20 μm.
Optionally, the first terminal and the second terminal are disposed on an upper surface of the piezoelectric layer.
According to a further aspect of an embodiment of the present invention, there is provided a filter including the resonator described above.
According to a further aspect of an embodiment of the present invention, there is provided an electronic device including the resonator described above, or the filter described above.
According to still another aspect of an embodiment of the present invention, there is provided a method of controlling a temperature of a bulk acoustic wave resonator, including the steps of: providing a temperature control structure in a bulk acoustic wave resonator, the temperature control structure having a first terminal and a second terminal, and a temperature control layer connected between the first terminal and the second terminal, the temperature control layer having a resistance, and the temperature control layer surrounding or covering at least a portion of an active area of the resonator in a top view of the resonator; the temperature of the active area of the resonator is adjusted by controlling the on-off and/or magnitude of the current flowing into the temperature control layer.
The above method may further comprise the steps of: controlling the temperature of the active area of the resonator at or above a predetermined temperature; or controlling the temperature of the active area of the resonator at or above the maximum ambient temperature.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
fig. 1A is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein a temperature control layer is disposed inside the bottom electrode, outside the acoustic mirror;
FIG. 1B is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein a temperature control layer is disposed inside the acoustic mirror and outside the top electrode;
fig. 1C is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the temperature control layer is partially disposed inside the top electrode and partially disposed outside the top electrode;
fig. 1D is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein a temperature control layer is disposed inside the top electrode;
FIG. 2 is a schematic cross-sectional view taken along line B-B of FIG. 1 in accordance with an exemplary embodiment of the present invention;
FIG. 3 is an enlarged view of area A of FIG. 2;
figure 4 is a schematic top view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention;
figure 5 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view taken along line B-B in FIG. 5, in accordance with an exemplary embodiment of the present invention;
figure 7 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
figure 8 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
figure 9 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
figure 10 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIG. 11 is a schematic cross-sectional view taken along line B-B of FIG. 10 in accordance with an exemplary embodiment of the present invention;
FIG. 12 is a schematic cross-sectional view, for example, taken along line B-B in FIG. 10, according to an exemplary embodiment of the present invention;
fig. 13 is a schematic cross-sectional view, for example, taken along line B-B in fig. 10, according to an exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
Fig. 1A is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein a temperature control layer is disposed inside the bottom electrode, outside the acoustic mirror; FIG. 1B is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein a temperature control layer is disposed inside the acoustic mirror and outside the top electrode; fig. 1C is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the temperature control layer is partially disposed inside the top electrode and partially disposed outside the top electrode; fig. 1D is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein a temperature control layer is disposed inside the top electrode.
For example, in the embodiment shown in FIG. 1D, 105 is the bottom electrode of the resonator and 107 is the piezoelectric layer of the resonator; 109 is the top electrode of the resonator; 115 is a metal connection layer above the bottom electrode of the resonator, and 117 is a metal connection layer above the top electrode of the resonator; 111 is a temperature control layer (corresponding to the conductor in the temperature control structure); 113 is a metal connection layer (corresponding to the first terminal and the second terminal) above the temperature control layer, which is provided in a single ring structure in fig. 1-2.
In the present invention, a passivation layer, not shown in fig. 1A-1D, may also be disposed over the resonator, generally.
In the present invention, the material of the temperature control layer 111 is a metal, and may be, for example, molybdenum, gold, ruthenium, platinum, copper, aluminum, titanium, tantalum, tungsten, or the like.
In the present invention, the electrode composition material may be formed of gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti), or the like. The piezoelectric layer material may be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), Quartz (Quartz), potassium niobate (KNbO3), lithium tantalate (LiTaO3), or the like.
In the embodiments shown in fig. 1A-1D, the temperature control layer is disposed at the edge of the resonator, so that an impedance mismatch boundary can be formed, and thus, the electrical performance of the resonator can be improved (e.g., the resonator parallel impedance Rp can be increased).
Fig. 2 is a schematic cross-sectional view taken along line B-B in fig. 1D, according to an exemplary embodiment of the present invention. As shown in fig. 2, the structure of the resonator in the vertical direction is sequentially: the acoustic mirror structure 103 may be a cavity structure etched in the substrate or an upwardly convex cavity structure, or may be an acoustic wave reflection form such as a bragg reflection structure, and in fig. 2, is a cavity structure etched in the substrate; a bottom electrode 105; a piezoelectric layer 107; a top electrode 109; a passivation layer 119; and a temperature control layer 111 located inside the piezoelectric layer.
In the embodiment shown in fig. 2, the temperature control layer is arranged in the middle of the piezoelectric layer. When the temperature control layer 111 is placed in the middle of the piezoelectric layer 107, the heating effect is better, the temperature rise is fast, and the heating is uniform, compared with the case of being arranged on the upper side or the lower side of the piezoelectric layer.
In the present invention, the middle of the piezoelectric layer means that the temperature control layer is located substantially at the middle of the piezoelectric layer in the thickness direction of the resonator.
It should be noted that, in fig. 2, an example of the position where the temperature control layer is disposed is shown, but as can be understood by those skilled in the art, the temperature control layer may not be disposed in the piezoelectric layer, and this is within the scope of the present invention.
Fig. 3 is an enlarged schematic view of a region a in fig. 2. As shown in FIG. 3, the horizontal width of the temperature control layer 111 from the edge of the top electrode is defined as W1, the width of the temperature control layer 111 is defined as W2, and the thickness is defined as H. W1 is in the range of 0-20um, and W2 is in the range of 0.5-20 um. Further, the thickness of the temperature control layer ranges from 50A < H <500A, e.g. 60A, 300A or 450A.
In the present invention, the value of a numerical range may be, for example, the median of the range or the like, in addition to the endpoints (inclusive) or the adjacent endpoints in the range (exclusive).
Although the conductor of the temperature control layer is shown as a rectangular cross section in fig. 3, the cross-sectional shape of the conductor may be different depending on the manufacturing process in the present invention.
In the embodiments shown in fig. 1A-1D and 2-3, the temperature control layer is formed as a linear, generally annular structure. The generally annular configuration herein is not required to form a closed annular shape in plan view.
In the embodiments shown in fig. 1A-1D and 2-3, the resistance of the temperature control layer is limited primarily by the area of the resonator.
Fig. 4 is a schematic top view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention. In the embodiment shown in fig. 4, 105 is the bottom electrode of the resonator and 107 is the piezoelectric layer of the resonator; 109 is the top electrode of the resonator; 115 is a metal connection layer above the bottom electrode of the resonator, and 117 is a metal connection layer above the top electrode of the resonator; 111 is a temperature control layer; 113 is a metal connection layer (corresponding to the first terminal and the second terminal) above the temperature control layer, which is provided in a single ring structure in fig. 4. The embodiment of fig. 4 is different from that of fig. 1 in that the temperature control layer structure is a curved annular structure, so that the resistance of the temperature control layer becomes larger, and the heating efficiency of the system can be further improved under the condition that the current is the same.
In the embodiments shown in fig. 1A-1D and 2-4, the temperature control layer is distributed only at the edges of the resonator, and the heating efficiency of the central active area of the resonator is not high enough. Fig. 5 is a schematic top view of a bulk acoustic wave resonator according to still another exemplary embodiment of the present invention, and fig. 6 is a schematic cross-sectional view taken along line B-B of fig. 5 according to an exemplary embodiment of the present invention. In the embodiment shown in fig. 5-6, 205 is the bottom electrode of the resonator and 207 is the piezoelectric layer of the resonator; 209 is the top electrode of the resonator; 215 is the metal connection layer above the resonator bottom electrode, 217 is the metal connection layer above the resonator top electrode; 211 is a temperature control layer (corresponding to the conductor in the temperature control structure); 213 is a metal connection layer (corresponding to the first terminal and the second terminal) above the temperature control layer, and 219 is a passivation layer. In fig. 5-6, the temperature control layer is provided as a covering surface structure.
In fig. 5-6, the temperature control layer structure is a spiral structure and can be designed to cover the whole resonator effective area, so that the resonator can be heated as a whole, and the resistance of the temperature control layer is further increased, under the condition that the current is the same, the heating efficiency of the system is further improved, and the time for reaching the same target temperature is shorter.
As shown in FIG. 6, the distance W3 (the wire pitch) between the ring structures is 1-20um, and the width W4 of the ring structures is 1-20 um. The thickness of the ring-shaped structure is 50A-500A.
Meanwhile, when the distance and the width of the spiral structure are set reasonably, a certain mass load effect can be achieved, and the electric performance of the resonator cannot be negatively affected. It is known that the main vibration mode of the resonator is a longitudinal wave in the thickness direction, and the wavelength is 2 times the thickness of the resonator, and preferably, the sum of W3 and W4 is approximately equal to an odd number of half wavelengths, so that Rp of the resonator can be increased without deterioration of Rs.
Fig. 7 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention. The structure of the temperature control layer in fig. 7 is similar to that in fig. 5, except that the temperature control layer has a zigzag line structure. In the embodiment shown in fig. 7, 305 is the bottom electrode of the resonator and 307 is the piezoelectric layer of the resonator; 309 the top electrode of the resonator; 315 is a metal connection layer above the bottom electrode of the resonator, 317 is a metal connection layer above the top electrode of the resonator; 311 is a temperature control layer (corresponding to the conductor in the temperature control structure); reference numeral 313 denotes a metal connection layer (corresponding to the first terminal and the second terminal) above the temperature control layer, and in fig. 7, the temperature control layer is provided in a covering surface structure.
Fig. 8 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. In the embodiment shown in fig. 8, 405 is the bottom electrode of the resonator and 407 is the piezoelectric layer of the resonator; 409 is the top electrode of the resonator; 415 is a metal connection layer above the bottom electrode of the resonator, 417 is a metal connection layer above the top electrode of the resonator; 411 is a temperature control layer (corresponding to the conductor in the temperature control structure); 413 is a metal connection layer (corresponding to the first terminal and the second terminal) above the temperature control layer, which is provided in a covering surface structure in fig. 8. In fig. 8, the temperature control layers have a parallel structure.
In the present invention, the resistance of the temperature control layer having the parallel structure becomes small, so that the voltage applied to the temperature control layer becomes small under the condition that the same temperature is obtained, thereby reducing the power consumption of the system.
Fig. 9 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. In the embodiment shown in fig. 9, 505 is the bottom electrode of the resonator and 507 is the piezoelectric layer of the resonator; 509, the top electrode of the resonator; 515 is a metal connection layer above the bottom electrode of the resonator, 517 is a metal connection layer above the top electrode of the resonator; 511 is a temperature control layer (corresponding to the conductor in the temperature control structure); 513 are metal connection layers (corresponding to the first terminal and the second terminal) above the temperature control layer, which is provided as a covering surface structure in fig. 9. In fig. 9, the temperature control layers have a parallel structure. Fig. 9 is different from fig. 8 in that the shape of the temperature control layer is arranged according to the shape of the resonator, which can make up for the shortage that the temperature control layer arranged in the parallel structure of fig. 8 cannot cover the entire effective area of the resonator.
Fig. 10 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, and fig. 11 is a schematic cross-sectional view taken along line B-B of fig. 10 according to an exemplary embodiment of the present invention. In the embodiment shown in fig. 10-11, 605 is the bottom electrode of the resonator and 607 is the piezoelectric layer of the resonator; 609 is the top electrode of the resonator; 615 is the metal connecting layer above the bottom electrode of the resonator, 617 is the metal connecting layer above the top electrode of the resonator; 611 is a temperature control layer (corresponding to the conductor in the temperature control structure); 613 is a metal connection layer (corresponding to a first terminal and a second terminal) over the temperature control layer; 619 is a passivation layer. In fig. 10-11, the temperature control layer is provided as a cover structure. In fig. 10 to 11, the temperature control layers have a parallel structure. Fig. 10-11 differ from fig. 9 in that in fig. 10-11, the temperature control layer is disposed radiantly, which allows the temperature control layer to cover the entire resonator, and in a parallel configuration, the resistance is small; in addition, the length of each temperature control layer arranged in parallel is basically the same, and the temperature control is more uniform in the whole resonator plane.
As shown in fig. 11, in the vertical direction, the structure of the resonator is as follows: the acoustic mirror structure 603 may be a cavity structure etched in the substrate or an upwardly convex cavity structure, or may be an acoustic wave reflection form such as a bragg reflection structure, and in fig. 11, is a cavity structure etched in the substrate; a bottom electrode 605; a piezoelectric layer 607; a top electrode 609; a passivation layer 619. Shown in fig. 11 is a temperature control layer 611 disposed in the piezoelectric layer, and a temperature control layer metal connection layer 613.
Fig. 12 is a schematic cross-sectional view, for example, taken along line B-B in fig. 10, according to an exemplary embodiment of the present invention. In the vertical direction, the structure of the resonator is as follows: the acoustic mirror structure 703 may be a cavity structure etched in the substrate or an upwardly convex cavity structure, or may be an acoustic wave reflection form such as a bragg reflection structure, and in fig. 12, is a cavity structure etched in the substrate; a bottom electrode 705; a piezoelectric layer 707; a top electrode 709. In fig. 12, the resonator further comprises a temperature control layer 711 and a temperature control layer metal connection layer 713 and a passivation layer 719. The structure in fig. 12 is similar to the structure of fig. 11, except that the temperature control layer is located in the passivation layer.
Fig. 13 is a schematic cross-sectional view, for example, taken along line B-B in fig. 10, according to an exemplary embodiment of the present invention. In the vertical direction, the structure of the resonator is as follows: acoustic mirror structures 803; a bottom electrode 805; a piezoelectric layer 807; a top electrode 809. In fig. 12, the resonator further includes a temperature control layer 811, a temperature control layer metal connection layer 813, and a passivation layer 819. Similar to the structure of fig. 11, except that in fig. 13, a non-conductive structural layer, which may be made of the material of the piezoelectric layer, is further disposed between the bottom electrode and the acoustic mirror. The temperature control layer 811 is located in the non-conductive structure layer and not connected to the bottom electrode.
In fig. 12 and 13, although the temperature control layer is shown as a radiation arrangement, the arrangement structures in fig. 1 to 8 may also be employed.
In the present invention, it is within the scope of the present invention to provide a temperature control layer surrounding or covering at least a portion of the active area, which can control or adjust or change the temperature of the active area of the resonator.
In the present invention, a temperature control unit may be provided which adjusts the temperature of the effective region of the resonator by controlling the on/off of the circuit of the temperature control layer and/or adjusting the magnitude of the current flowing through the temperature control layer. For example, the temperature is adjusted to a predetermined temperature, or above a predetermined temperature, to reduce or eliminate the effect of fluctuations in ambient temperature on the resonator frequency. Accordingly, the temperature of the active area of the resonator may be monitored, and the temperature control layer may be controlled based on the temperature.
The temperature of the active area of the resonator may also be brought to or above the maximum ambient temperature by means of a temperature control unit. The maximum external temperature (for example, 100 degrees celsius) refers to that the resonator is operated at a temperature higher than the maximum external temperature (for example, 150 degrees celsius), and the fluctuation of the external temperature (for example, the temperature of the resonator is changed from 20 degrees to 40 degrees celsius) has little influence on the temperature fluctuation of the resonator itself (the temperature of the resonator may be changed from 150 degrees to 155 degrees celsius), so that the frequency drift is reduced.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
a piezoelectric layer; and
a temperature control structure is arranged on the base plate,
wherein:
the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; and is
The temperature control structure has a first terminal and a second terminal, and a temperature control layer connected between the first terminal and the second terminal, the temperature control layer having a resistance, and the temperature control layer surrounding or covering at least a portion of the active area in a top view of the resonator.
2. A filter comprises the resonator.
3. An electronic device comprising the resonator or the filter. It should be noted that the electronic device herein includes, but is not limited to, intermediate products such as a radio frequency front end, a filtering and amplifying module, an oscillator, and terminal products such as a mobile phone, WIFI, and an unmanned aerial vehicle.
4. A method of controlling the temperature of a bulk acoustic wave resonator, comprising the steps of: providing a temperature control structure in a bulk acoustic wave resonator, the temperature control structure having a first terminal and a second terminal, and a temperature control layer connected between the first terminal and the second terminal, the temperature control layer having a resistance, and the temperature control layer surrounding or covering at least a portion of an active area of the resonator in a top view of the resonator; and adjusting the temperature of the effective area of the resonator by controlling the on-off and/or the magnitude of the current flowing into the temperature control layer.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (20)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode;
a piezoelectric layer; and
a temperature control structure is arranged on the base plate,
wherein:
the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; and is
The temperature control structure has a first terminal and a second terminal, and a temperature control layer connected between the first terminal and the second terminal, the temperature control layer having a resistance, and the temperature control layer surrounding or covering at least a portion of the active area in a top view of the resonator.
2. The resonator of claim 1, further comprising:
and the temperature control unit monitors the temperature of the effective area and controls the on-off of the current in the first terminal and the second terminal and/or the magnitude of the current.
3. The resonator of claim 1 or 2, wherein:
the temperature control layer is formed in a linear, generally annular configuration.
4. The resonator of claim 3, wherein:
the ring-shaped structure is disposed around and adjacent to an edge of the active area.
5. The resonator of claim 4, wherein:
in the top view, the ring-shaped structure has the same or similar shape as the active area.
6. The resonator of any of claims 3-5, wherein:
the temperature control layer is a linear annular wire or a bent annular wire.
7. The resonator of claim 1 or 2, wherein:
the temperature control layer forms a cover surface structure.
8. The resonator of claim 7, wherein:
in the plan view, the cover surface structure has a structure that is the same as or similar to the shape of the active area.
9. The resonator of claim 7 or 8, wherein:
the covering surface structure is a spiral winding structure or a broken line structure of a single lead between the first terminal and the second terminal.
10. The resonator of claim 9, wherein:
in the radial direction, the sum of the distance W3 between adjacent wires of the spirally wound structure and the width W4 of the wires is an odd multiple of one-half wavelength of a longitudinal wave in the thickness direction of the resonator in the main vibration mode of the resonator.
11. The resonator of claim 7 or 8, wherein:
the cover surface structure is a parallel structure having a first lead electrically connected to the first terminal, a second lead electrically connected to the second terminal, and a plurality of parallel connection lines connected in parallel between the first lead and the second lead.
12. The resonator of claim 11, wherein:
the first lead and the second lead are parallel to each other; or
The first lead and the second lead are arranged along the edge of the effective area, and the covering surface structure has the same or similar shape with the effective area; or
The first lead extends to the middle position of the effective area, the second lead is arranged along the edge of the effective area and has the same or similar shape with the effective area, and the plurality of parallel connection lines are formed into a radial structure.
13. The resonator of any of claims 1-12, wherein:
the temperature control layer is provided in the piezoelectric layer, and further, provided at a substantially middle position of the piezoelectric layer in a thickness direction of the piezoelectric layer; or
The resonator further comprises a passivation layer covering the top electrode, and the temperature control layer is arranged in the passivation layer; or
And a non-conductive structural layer is also arranged between the piezoelectric layer and the acoustic mirror, and the temperature control layer is arranged in the non-conductive structural layer.
14. The resonator of any of claims 1-13, wherein:
in the top view, the temperature control layer is positioned inside the edge of the bottom electrode and outside the edge of the acoustic mirror, and optionally, the thickness of the lead of the temperature control layer is 50A-5000A; or
In the top view, the temperature control layer is positioned outside the edge of the top electrode and inside the edge of the acoustic mirror, and optionally, the thickness of the wire of the temperature control layer is 50A-5000A.
15. The resonator of any of claims 1-13, wherein:
in the top view, the temperature control layer is positioned inside the edge of the top electrode, further, the distance between the temperature control layer and the edge of the top electrode is in the range of 0-20 μm and/or the wire width of the temperature control layer is in the range of 0.5-20 μm, and optionally, the wire thickness of the temperature control layer is in the range of 50A-500A; or
The temperature control layer is partially positioned outside the edge of the top electrode and partially positioned inside the edge of the top electrode, further, the width of the temperature control layer is within the range of 0.5-20 μm, and optionally, the wire thickness of the temperature control layer is within the range of 50A-500A.
16. The resonator of any of claims 1-15, wherein:
the first and second terminals are disposed on an upper surface of the piezoelectric layer.
17. A filter, comprising:
the bulk acoustic wave resonator according to any one of claims 1-16.
18. An electronic device comprising the bulk acoustic wave resonator according to any one of claims 1-16, or the filter according to claim 17.
19. A method of controlling the temperature of a bulk acoustic wave resonator, comprising the steps of:
providing a temperature control structure in a bulk acoustic wave resonator, the temperature control structure having a first terminal and a second terminal, and a temperature control layer connected between the first terminal and the second terminal, the temperature control layer having a resistance, and the temperature control layer surrounding or covering at least a portion of an active area of the resonator in a top view of the resonator;
the temperature of the active area of the resonator is adjusted by controlling the on-off and/or magnitude of the current flowing into the temperature control layer.
20. The method of claim 19, further comprising the step of:
controlling the temperature of the active area of the resonator at or above a predetermined temperature; or
The temperature of the active area of the resonator is controlled at or above the maximum ambient temperature.
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