CN111003684A - Packaging of MEMS devices with release holes in the packaging space - Google Patents
Packaging of MEMS devices with release holes in the packaging space Download PDFInfo
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- CN111003684A CN111003684A CN201910157928.3A CN201910157928A CN111003684A CN 111003684 A CN111003684 A CN 111003684A CN 201910157928 A CN201910157928 A CN 201910157928A CN 111003684 A CN111003684 A CN 111003684A
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Computer Hardware Design (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a MEMS device assembly comprising: a MEMS device comprising an air gap structure; and an encapsulation film forming an encapsulation space enclosing the MEMS device, wherein: the MEMS device is provided with a first release hole communicated with the air gap structure, and the first release hole is positioned in the packaging space; the packaging film is provided with a second release hole, and sealing materials are filled in the second release hole; and in vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is less than 20 um. The invention also relates to an electronic device with the MEMS device assembly, electronic equipment with the MEMS device assembly or the electronic device, and a packaging method of the MEMS device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a MEMS device assembly, an electronic device having the MEMS device assembly, an electronic apparatus having the MEMS device assembly or the electronic device, and a packaging method of the MEMS device.
Background
A miniaturized, high-performance film bulk acoustic wave (FBAR) band pass filter is widely used in a mobile wireless communication system. The thin film bulk acoustic band pass filter is based on a high Q resonator that utilizes the thickness extensional mode of a piezoelectric aluminum nitride (AlN) thin film. The film bulk acoustic resonator mainly has the following three structures:
(1) the silicon is back etched. According to the bulk silicon micro-manufacturing process, most silicon materials are etched and removed from the reverse side of the silicon wafer, so that an air interface is formed on the lower surface of the piezoelectric oscillation stack, and therefore sound waves are limited in the piezoelectric oscillation stack. Since the large-area silicon substrate is removed, the mechanical fastness of the device is influenced, and the yield is greatly reduced.
(2) Air gap type. The surface micro-fabrication process is used to form an air gap on the top surface of the silicon wafer to confine the acoustic wave within the piezoelectric stack. The air gap can be a sinking type formed by removing part of the surface of the silicon wafer, or an upward convex type formed directly on the surface of the silicon without removing the silicon. The FBAR not only can well limit sound waves in the piezoelectric oscillation stack to obtain a high Q value, but also has much better mechanical fastness compared with a silicon wafer reverse etching type because a surface micro-manufacturing process is adopted and most of a silicon substrate does not need to be removed; in addition, the reverse side of the silicon substrate does not need to be processed, so that the method can be compatible with the traditional silicon integrated circuit process and has integration possibility.
(3) Solid-state assembled reactors (SMRs). Unlike the former two, SMR uses Bragg reflector to confine the sound within the piezoelectric stack, and Bragg reflector is typically W and SiO2As an acoustic layer of high and low impedance, because of W and SiO2The acoustic impedance is much different between them and both materials are materials within the standard CMOS process. Its greatest advantages are high mechanical strength, good integration and no need of process, which makes many semiconductor factories without processBusinesses may also be conveniently incorporated. However, the drawback is that it requires the preparation of a multilayer film, the process cost is higher than that of the air gap type, and the acoustic reflection effect of the bragg reflector is not as good as that of air, so the Q value of SMR is generally lower than that of the air gap type FBAR.
Fig. 1 and 2 are a top view and a cross-sectional view taken along a-a in the top view of a typical air gap type FBAR, respectively. Wherein 10 is the air gap structure of the resonator, 11 is the release hole of the air gap, 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, and 14 is the top electrode of the resonator.
Generally, the film bulk acoustic resonator has specific packaging requirements under different application environments. For example, certain bulk acoustic wave resonators may operate optimally in certain environmental conditions, such as a certain range of humidity or pressure or in an inert gas. Furthermore, certain bulk acoustic wave resonators may be sensitive to certain contamination.
Fig. 3A-3E illustrate a prior art thin film packaging process for a resonator. As shown in the figure:
the known film encapsulation process is as follows:
1): an air gap type film bulk acoustic resonator with good performance is shown in fig. 3A;
2): depositing a sacrificial layer 30 over the resonator, as shown in FIG. 3B;
3): forming an encapsulation film 31 over the sacrificial layer, as shown in fig. 3C;
4): forming an opening 32 in the encapsulation film 31 and releasing the sacrificial layer 30 to form an encapsulation cavity 33, as shown in fig. 3D;
5): a sealing layer 35 is formed on the encapsulation film 31 to seal the opening 32 in the encapsulation film 31, thereby sealing the encapsulation cavity 33, as shown in fig. 3E.
However, in the case of the air gap type film bulk acoustic resonator, during the packaging process, when the sacrificial layer 30 is released to form the package cavity 33, since the position of the opening 32 is located at the middle portion of the film 31, the distance of the liquid medicine entering the package cavity 33 and entering the air gap 10 through the release hole 11 becomes long, as shown by the arrow in fig. 3D. Therefore, the chemical residue and the like generated during the release of the sacrificial layer 30 are easily accumulated in the air gap 10, and the performance of the resonator is deteriorated. Meanwhile, for the air gap FBAR, there is a step 34 in the encapsulation film 34 formed over the relief hole 11 of the air gap, which results in poor stability of the encapsulation structure due to large stress concentration at the step. Moreover, the encapsulant may easily fall from the opening 32 over the device when final sealing is performed, resulting in poor resonator performance.
In existing packaging methods, such as bond packaging, a cover substrate is mounted over the device. One example cover substrate is a dome or cap-shaped "cap" that can be positioned over each device and then secured to a support substrate. After singulation, the devices may be packaged individually, e.g., in a housing, at the chip level. However, this packaging method increases the overall size of the device and increases the packaging cost due to the large number of packaging steps, while easily introducing particle contamination in chip scale packaging. In another packaging method, such as thin film packaging, a sacrificial layer is firstly deposited on the device during processing, then a thin film is coated in a spinning mode to serve as a packaging layer, a pore channel is formed through etching and reaches the sacrificial layer, the sacrificial layer is released to form a cavity, and then a thin film is coated in a spinning mode to seal the cavity. The packaging method has the advantages of simple process, good sealing, low cost and compatibility with IC process.
However, when the air gap FBAR is sealed by a film sealing method, residues of a chemical solution or the like are easily introduced into the air gap at the bottom of the device when the package cavity is released, which affects the performance of the device, lowers the Q value, and the like.
The above problems also exist for the packaging of other MEMS devices.
Disclosure of Invention
The present invention has been made to alleviate or solve the above-mentioned problems in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a thin film bulk acoustic resonator assembly including:
a MEMS device comprising an air gap structure; and
an encapsulation film forming an encapsulation space enclosing the MEMS device,
wherein:
the MEMS device is provided with a first release hole communicated with the air gap structure, and the first release hole is positioned in the packaging space;
the packaging film is provided with a second release hole, and sealing materials are filled in the second release hole; and is
In vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is less than 20 um.
Optionally, in a vertical projection, the second release holes coincide with or partially coincide with the corresponding first release holes.
Optionally, in the vertical projection, the horizontal distance between each second release hole and the corresponding first release hole is less than 20 um.
Optionally, the MEMS device assembly includes a sealing layer at least partially covering the encapsulation film, and a material constituting the sealing layer constitutes a sealing material filling the second release hole.
Optionally, the MEMS device comprises a bulk acoustic wave resonator. Further, the MEMS device includes a film bulk acoustic resonator.
In an alternative embodiment, the bulk acoustic wave resonator comprises a bottom electrode, a piezoelectric layer and a top electrode, the encapsulation film covers the bulk acoustic wave resonator, the assembly comprises a sealing layer at least partially covering the encapsulation film, and the material composing the sealing layer constitutes a sealing material filling the second release hole; and the material of the sealing layer is the same as that of the top electrode, and the material of the packaging film is the same as that of the piezoelectric layer. Further, the material of the sealing layer is selected from one of the following materials: materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and the like; the material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotubes, tokdfr materials, and the like.
According to another aspect of embodiments of the present invention, there is provided an electronic device comprising a plurality of the MEMS device assemblies described above.
Optionally, at least two of the MEMS device components have a common first release hole. Furthermore, at least two MEMS devices are packaged in a packaging space formed by a piece of packaging film.
Optionally, the electronic device includes at least two packaging spaces, each packaging space is formed by a layer of packaging film, and at least two MEMS devices are packaged in at least one packaging space.
Optionally, the electronic device comprises a filter.
According to a further aspect of an embodiment of the present invention, an electronic device is proposed, comprising the above-mentioned electronic device or the above-mentioned MEMS device assembly.
According to a further aspect of embodiments of the present invention, there is provided a method for packaging a MEMS device, the resonator including an air gap structure and being provided with a first release hole communicating with the air gap structure, the method including the steps of:
forming a packaging space for sealing the MEMS device by using a packaging film, wherein the first release hole is positioned in the packaging space;
second release holes communicated with the packaging space are formed in the packaging film, and the position of at least one second release hole is set in a range that the horizontal distance between the at least one second release hole and the corresponding first release hole is smaller than 20 microns in vertical projection; and
sealing the second release aperture.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1 is a schematic top view of a prior art film bulk acoustic resonator;
FIG. 2 is a cross-sectional view of the resonator of FIG. 1 taken along line A-B;
FIGS. 3A-3E illustrate a prior art process for thin film encapsulation of a film bulk acoustic resonator;
FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention;
FIG. 4B is a schematic cross-sectional view taken along A-A in FIG. 4A;
FIG. 4C is a schematic illustration of the resonator shown in FIG. 4A after a sealing layer has been provided thereon;
FIG. 5A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention;
FIG. 5B is a schematic cross-sectional view taken along A-A in FIG. 5A;
FIG. 5C is a schematic illustration of the resonator shown in FIG. 5A after a sealing layer has been provided thereon;
FIG. 6A is a schematic top view of a filter according to an exemplary embodiment of the present invention;
FIG. 6B is a schematic cross-sectional view taken along A-A in FIG. 6A;
FIG. 6C is a schematic illustration of the filter of FIG. 6A after a sealing layer has been provided thereon;
fig. 6D is a diagram illustrating the encapsulation of resonator packets in a filter;
fig. 7 is a schematic cross-sectional view of a thin film package showing a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
A MEMS device assembly according to an embodiment of the present invention will be exemplarily described below, taking a thin film package of a thin film bulk acoustic resonator as an example, with reference to the accompanying drawings.
FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention; FIG. 4B is a schematic cross-sectional view taken along A-A in FIG. 4A; fig. 4C is a schematic diagram of the resonator shown in fig. 4A after a sealing layer is provided thereon.
Fig. 4A is a top view of an embodiment of a film package of an air gap type film bulk acoustic resonator. Wherein 10 is the air gap structure at the bottom of the FBAR, 11 is the release holes (corresponding to the first release holes, the typical value of the size of which may be 10um) of the air gap 10, 12 is the bottom electrode of the resonator, 14 is the top electrode of the resonator, 31 is the encapsulation film, and 32 is the release openings (corresponding to the second release holes) of the encapsulation film 31. The release opening 32 of the encapsulation film 31 overlaps in vertical projection with the release hole 11 of the air gap at the bottom of the resonator (see more specifically fig. 4B).
In fig. 4B, 10 is the air gap at the bottom of the resonator, and 11 is the relief hole of the air gap at the bottom of the resonator; 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, 14 is the top electrode of the resonator; 31 is the packaging film, 32 is the release opening on the packaging film, and 33 is the cavity under the packaging film. The thickness of the packaging film 31 may be 1-10um, typically 3um, and the height of the cavity above the resonator may be 0.1-10 um.
In the embodiment of the invention, since the release holes on the packaging film 31 are vertically overlapped with the release holes 11 of the air gap at the bottom of the resonator, in the process of forming the packaging space 33, after the liquid medicine enters the air gap at the bottom of the resonator through the release holes 11, the liquid medicine can rapidly and circularly flow out to take away the liquid medicine residues and the like, so that the possibility of leaving the liquid medicine residues in the air gap is reduced, as shown by arrows in fig. 4B, and the performance of the resonator is favorably improved; meanwhile, since the openings 32 of the encapsulation film 31 are on both sides of the effective region of the resonator, when the openings of the encapsulation film are finally sealed, even if the sealing agent falls off, the performance of the resonator is not affected. Moreover, since the opening position of the packaging film 31 is positioned right above the release hole 11 of the air gap 10, when the packaging film is formed, a step is not generated at the position, and the stress accumulation phenomenon is avoided, so that the packaging structure of the resonator is more stable.
After the formation of the package space 33 above the resonator, a sealing layer, such as 41 in fig. 4C, is finally formed on the package film 31, the opening 32 in the package film 31 is sealed, and finally the sealed package space 33 is formed above the resonator, so that the film bulk acoustic resonator is hermetically packaged. Wherein the thickness of the sealing layer may be 10-50 um.
FIG. 5A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention; FIG. 5B is a schematic cross-sectional view taken along A-A in FIG. 5A; fig. 5C is a schematic diagram of the resonator shown in fig. 5A after a sealing layer is provided thereon.
Fig. 5A is a top view of another air gap type film bulk acoustic resonator film package in the embodiment. Wherein, 10 is an air gap structure at the bottom of the resonator, and 11 is a release hole of the air gap at the bottom of the resonator; 12 is the bottom electrode of the resonator, 14 is the top electrode of the resonator; the reference numeral 31 denotes an encapsulation film, and 32 denotes an opening formed in the encapsulation film 31. Wherein the openings 32 in the encapsulation film 31 do not overlap the resonator bottom air gap release holes 11 in the vertical direction, but are horizontally very close together, in the range of less than 40um, preferably less than 20 um.
In fig. 5B, the opening 32 in the encapsulation film 31 does not overlap the release hole 11 of the resonator bottom air gap 10 in the vertical direction, but is horizontally closer, for example, in the distance range mentioned above. In this way, during the releasing process of the film-encapsulated cavity 33, the liquid medicine flowing in through the opening 32 can rapidly and circularly flow out after passing through the air gap 10 at the bottom of the resonator, which is beneficial to taking away the liquid medicine residue and the like, as shown by the arrow in fig. 5B, thereby reducing the influence of the liquid medicine residue on the performance of the resonator.
Moreover, since the position of the opening 32 on the packaging film 31 is located outside the effective area of the resonator, even if the sealing agent falls off when the packaging film is finally sealed, the performance of the resonator is not affected.
After the formation of the package space 33 above the resonator, a sealing layer, such as 41 in fig. 5C, is finally formed on the package film 31, the opening 32 in the package film 31 is sealed, and finally the sealed package space 33 is formed above the resonator, so that the film bulk acoustic resonator is hermetically packaged.
Fig. 7 is a schematic cross-sectional view illustrating a thin film package of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention, wherein 10 is a bottom air gap structure of the resonator and 11 is a release hole of the bottom air gap of the resonator; 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, 14 is the top electrode of the resonator; 31 is a packaging film, 32 is an opening on the packaging film, 33 is a packaging space on the top of the resonator, and 34 is a sealing layer. In this embodiment, the openings in the encapsulation film are located on both sides of the encapsulation film and overlap the release holes of the air gap at the bottom of the resonator in the vertical direction or are smaller than 20um in the horizontal distance.
As can be understood by those skilled in the art, although the above embodiments illustrate the film package by taking the film bulk acoustic resonator as an example, the film package can also be applied to other MEMS devices having an air gap structure.
Based on the above, the present invention provides a MEMS device assembly, comprising:
a MEMS device comprising an air gap structure 10; and
an encapsulation film 31 forming an encapsulation space 33 enclosing the resonator,
wherein:
the resonator is provided with a first release hole (corresponding to the release hole 11) communicated with the air gap structure 10, and the first release hole is positioned in the packaging space;
the packaging film is provided with a second release hole (corresponding to the open hole 32), and the second release hole is filled with a sealing material; and is
In vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is less than 20 um.
Based on the above, the present invention further provides a method for packaging a MEMS device, where the MEMS device includes an air gap structure and is provided with a first release hole communicated with the air gap structure, and the method includes:
forming a packaging space for sealing the MEMS device by using a packaging film, wherein the first release hole is positioned in the packaging space;
second release holes communicated with the packaging space are formed in the packaging film, and the position of at least one second release hole is set to be that the horizontal distance between the at least one second release hole and the corresponding first release hole is smaller than 20 microns in vertical projection; and
sealing the second release aperture.
FIG. 6A is a schematic top view of a filter (e.g., a ladder filter) according to an exemplary embodiment of the present invention; FIG. 6B is a schematic cross-sectional view taken along A-A in FIG. 6A; FIG. 6C is a schematic illustration of the filter of FIG. 6A after a sealing layer has been provided thereon; fig. 6D is a diagram exemplarily illustrating the encapsulation of the resonator packets in the filter.
In the embodiment shown in fig. 6A, the filter is formed by an air gap type FBAR in a ladder structure, i.e., each stage is composed of a series resonator and a parallel resonator, wherein 61 and 62 are series resonators and 63 is a parallel resonator; 11 is a release hole of an air gap at the bottom of the resonator, 31 is an encapsulation film, and 32 is an open pore structure of the encapsulation film. In this embodiment, the opening of the packaging film 32 is vertically overlapped with the releasing hole 11 of the air gap at the bottom of the resonator, so that when the film packaging cavity is released, the influence of the generated liquid medicine residue on the air gap at the bottom of the resonator is reduced as much as possible, and the influence on the performance of the resonator is reduced.
In fig. 6B, 10 is the air gap structure at the bottom of the resonator, and 11 is the release hole of the air gap at the bottom of the resonator; 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, 14 is the top electrode of the resonator; 31 is a packaging film structure, 32 is an opening on the packaging film, and 33 is a cavity structure under the packaging film.
After the formation of the packaging space 33 above the resonator, a sealing layer, such as 41 in fig. 6C, is finally formed on the packaging film 31, the opening 32 in the packaging film 31 is sealed, and finally the sealed space 33 is formed above the resonator, so that the film bulk acoustic resonator is hermetically packaged.
When the number of resonators constituting the filter is increased, if each resonator is individually packaged, electrical connection between the resonators becomes long, thereby increasing electrical loss of the filter; if the filter is packaged integrally, the cavity formed by the packaging film is easy to collapse due to overlarge area, so that the performance of the filter is poor. Therefore, when the filter is packaged in a plurality of packages, the filters can be packaged in a single package, or can be packaged in two or three packages, so that the problem can be effectively avoided, as shown in fig. 6D. Meanwhile, in fig. 6C, the opening 32 of the packaging film 31 is overlapped with the release hole 11 of the air gap at the bottom of the resonator in the thickness direction, so that the generated liquid medicine residues are effectively less left in the cavity at the bottom of the resonator in the process of forming the cavity above the resonator, and the performance of the resonator is favorably improved.
It should be noted that the embodiments of fig. 6A to 6C of the present invention are described by taking the thin film package of the filter as an example, however, it can be understood by those skilled in the art that the thin film package described above is not limited to be applied to the filter. Based on this, embodiments of the present invention also propose an electronic device comprising a plurality of the above-mentioned MEMS device assemblies. Optionally, at least two of the MEMS device components have a common first release hole. Furthermore, at least two MEMS devices are packaged in a packaging space formed by a layer of packaging film.
Optionally, the electronic device includes at least two packaging spaces, each packaging space is formed by a layer of packaging film, and at least two MEMS devices are packaged in at least one packaging space.
In the present invention, the electrode constituent material may be formed of gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti), or the like.
The piezoelectric layer material may be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), Quartz (Quartz), potassium niobate (KNbO3), lithium tantalate (LiTaO3), or the like.
The sacrificial layer material can be organic material, polymer, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxide (such as MgO, ZnO), photoresist (such as SU-8), and other easily soluble materials.
The packaging film material can be silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotube, TOK DFR material and the like;
the sealing layer material can be dense materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride and the like.
In an alternative embodiment, the material of the sealing layer is the same as the material of the top electrode, and the material of the encapsulation film is the same as the material of the piezoelectric layer. More specifically, the material of the sealing layer is selected from one of the following materials: materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and the like; the material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotubes, tokdfr materials, and the like. In addition, the sacrificial layer forming the air gap structure and the sacrificial layer forming the packaging space can adopt the same material, and the material is selected from one of the following materials: organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metals (such as Ge, Ti, Cu), metal oxides (such as MgO, ZnO), photoresists (such as SU-8), and the like.
In the present invention, the expression "vertical projection" is used, and as shown in fig. 4B, it is understood that the projection is made in the thickness direction of the resonator. The term "overlap" in the present invention is on the same vertical projection line, or substantially on the same vertical projection line.
Although not shown, embodiments of the present invention also relate to an electronic device comprising the MEMS device assembly described above or the electronic device described above.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (19)
1. A MEMS device assembly comprising:
a MEMS device comprising an air gap structure; and
an encapsulation film forming an encapsulation space enclosing the MEMS device,
wherein:
the MEMS device is provided with a first release hole communicated with the air gap structure, and the first release hole is positioned in the packaging space;
the packaging film is provided with a second release hole, and sealing materials are filled in the second release hole; and in vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is less than 20 um.
2. The assembly of claim 1, wherein:
in vertical projection, the second release holes coincide with the corresponding first release holes.
3. The assembly of claim 1, wherein:
in vertical projection, the second release holes are partially overlapped with the corresponding first release holes.
4. The assembly of claim 1, wherein:
in vertical projection, the horizontal spacing between each second release hole and the corresponding first release hole is in the range of less than 20 um.
5. The assembly of claim 1, wherein:
the MEMS device assembly comprises a sealing layer at least partially covering the packaging film, and the material composing the sealing layer forms a sealing material filling the second release hole.
6. The assembly of any one of claims 1-5, wherein:
the MEMS device includes a bulk acoustic wave resonator.
7. The assembly of claim 6, wherein:
the MEMS device comprises a film bulk acoustic resonator.
8. The assembly of claim 6 or 7, wherein:
the bulk acoustic wave resonator comprises a bottom electrode, a piezoelectric layer and a top electrode, the packaging film covers the bulk acoustic wave resonator, the assembly comprises a sealing layer at least partially covering the packaging film, and a sealing material filling the second release hole is formed by a material forming the sealing layer; and is
The material of the sealing layer is the same as that of the top electrode, and the material of the encapsulation film is the same as that of the piezoelectric layer.
9. The assembly of claim 8, wherein:
the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride;
the material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotube, TOK DFR material.
10. An electronic device comprising a plurality of MEMS device assemblies according to any of claims 1-9.
11. The electronic device of claim 10, wherein:
at least two of the MEMS device components have a common first release hole.
12. The electronic device of claim 11, wherein:
at least two MEMS devices are packaged in a packaging space formed by a layer of packaging film.
13. The electronic device of claim 10, wherein:
the electronic device comprises at least two packaging spaces, each packaging space is formed by a layer of packaging film, and at least two MEMS devices are packaged in at least one packaging space.
14. The electronic device of any one of claims 10-13, wherein:
the electronic device includes a filter.
15. An electronic device comprising an electronic device according to any of claims 10-14 or a MEMS device assembly according to any of claims 1-8.
16. A method of packaging a MEMS device including an air gap structure and provided with a first release aperture in communication with the air gap structure, the method comprising the steps of:
forming a packaging space for sealing the MEMS device by using a packaging film, wherein the first release hole is positioned in the packaging space;
second release holes communicated with the packaging space are formed in the packaging film, so that the position of at least one second release hole is set to be in a range that the horizontal distance between the at least one second release hole and the corresponding first release hole is smaller than 20um in vertical projection; and
sealing the second release aperture.
17. The method of claim 16, wherein:
in vertical projection, the second release holes are overlapped or partially overlapped with the corresponding first release holes.
18. The method of claim 16, wherein:
the air gap structure is formed by releasing the first sacrificial layer, and the packaging space is formed by releasing the second sacrificial layer; and is
The first sacrificial layer and the second sacrificial layer are made of the same material and are selected from one of the following materials: organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metals, metal oxides, photoresists.
19. The method of claim 18, wherein:
the MEMS device is a bulk acoustic wave resonator, the bulk acoustic wave resonator comprises a bottom electrode, a piezoelectric layer and a top electrode, the packaging film covers the bulk acoustic wave resonator, the assembly comprises a sealing layer at least partially covering the packaging film, and the sealing layer is made of a material which fills the second release hole; and is
The material of the sealing layer is the same as that of the top electrode and is selected from one of the following materials: silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride; and is
The material of the packaging film is the same as that of the piezoelectric layer and is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotube, TOK DFR material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910157928.3A CN111003684B (en) | 2019-03-02 | 2019-03-02 | The release hole is positioned in the packaging space encapsulation of MEMS devices within |
| PCT/CN2020/076207 WO2020177557A1 (en) | 2019-03-02 | 2020-02-21 | Package for mems device of which release hole is arranged in packaging space |
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| CN201910157928.3A CN111003684B (en) | 2019-03-02 | 2019-03-02 | The release hole is positioned in the packaging space encapsulation of MEMS devices within |
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| WO2020177557A1 (en) | 2020-09-10 |
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