CN110996095A - Multiplication CCD multiplication gain fitting measurement method - Google Patents

Multiplication CCD multiplication gain fitting measurement method Download PDF

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CN110996095A
CN110996095A CN201911222601.6A CN201911222601A CN110996095A CN 110996095 A CN110996095 A CN 110996095A CN 201911222601 A CN201911222601 A CN 201911222601A CN 110996095 A CN110996095 A CN 110996095A
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exp
emccd
multiplication
gain
image gray
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CN110996095B (en
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温强
金敬文
朱垚鑫
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Harbin Engineering University
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Harbin Engineering University
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N17/00Diagnosis, testing or measuring for television systems or their details

Abstract

The invention relates to the technical field of electronic component testing, in particular to the field of a multiplication gain fitting measurement method of multiplication CCD (EMCCD). The method comprises the following steps: setting a multiplication gain control register as 0, and obtaining a group of average values of image gray signals by the EMCCD under the flat field light and the dark field respectively aiming at different exposure time; setting a multiplication gain control register as x, and obtaining a group of average values of image gray signals by the EMCCD under the flat field light and the dark field respectively aiming at different exposure time; and fitting two straight lines by a least square method, wherein the ratio of the slope of the straight line to the slope of the straight line is the current multiplication gain of the EMCCD. The EMCCD multiplication gain measuring method based on the multiple groups of data has the advantages that compared with the existing method, the EMCCD multiplication gain measuring method based on the multiple groups of data can obtain more accurate multiplication gain, is stable and reliable, and is suitable for engineering application.

Description

Multiplication CCD multiplication gain fitting measurement method
Technical Field
The invention relates to the technical field of electronic component testing, in particular to the field of a multiplication gain fitting measurement method of multiplication CCD (EMCCD).
Background
The EMCCD, electron multiplying CCD, is a high-end photoelectric detection product with extremely high sensitivity in the detection field. With the rapid development of the EMCCD, the EMCCD has been widely used in the fields of military, astronomy, etc., and gradually penetrated into the aspects required by people's daily life. The EMCCD has high quantum efficiency and strong detection efficiency on low-light-level images, and is an all-solid-state electron multiplier. The novel high-power LED driving circuit has the advantages of low manufacturing cost, long service life and high stability, and the multiplication gain is adjustable, so that the novel high-power LED driving circuit can meet the application requirements of all-weather and large dynamic range. In the identification test, the problems of large deviation of test results, poor stability and the like of the conventional gain test method of the EMCCD exist, the conventional method needs to be improved aiming at the corresponding problems, and the test method with higher precision and higher stability is designed.
Different from the commonly adopted two-point multiplication gain calculation method at present, the method is based on two groups of image gray scale signals under different settings and different integration times of the multiplication control register, a least square method is used for fitting two straight lines, and the ratio of the slopes of the two straight lines is the EMCCD multiplication gain.
Disclosure of Invention
The invention aims to provide a multiplication CCD multiplication gain fitting measurement method.
The invention is realized by the following steps:
a method of multiplicative CCD multiplicative gain fitting measurement, said method comprising the steps of:
(1) setting multiplication gain control register as 0, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signals1(texp)、μ1d(texp) (ii) a Setting multiplication gain control register as x, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signalsx(texp)、μxd(texp);
(2) By the relation:
μ1out(texp)=μ1(texp)-μ1d(texp)=Aμe(texp)
μxout(texp)=μx(texp)-μxd(texp)=Mxe(texp)
to obtain mu1outAnd muxoutWherein:
μ1outwhen the gain is controlled to be 0 for multiplication, the EMCCD is exposed under flat field lighttexpConverting photons into components of electrons in the mean value of the image gray scale signals after time amplification;
μxoutwhen the gain is multiplied and the register is controlled to be x, the EMCCD is exposed to t under flat field lightexpConverting photons into components of electrons in the mean value of the image gray scale signals after time amplification;
texpintegration (exposure) time within the linear section of the EMCCD;
μ1(texp) To multiply the gain control register to 0 under flat field light, the EMCCD exposes texpAverage value of the image gray signal obtained after the time;
μ1d(texp) To multiply the gain control register to 0, the EMCCD is exposed to t under the dark fieldexpAverage value of the image gray signal obtained after the time;
μx(texp) When the register is set to x for multiplication gain control, the EMCCD exposes t under flat field lightexpAverage value of the image gray signal obtained after the time;
μxd(texp) To multiply the gain control register x under dark field, EMCCD exposes texpAverage value of the image gray signal obtained after the time;
a is the system gain of the EMCCD when the multiplication gain is equal to 1;
Mxcontrolling EMCCD multiplication gain when the register is x for multiplication gain;
(3) with texpAs an independent variable, μ1out(texp) And muxout(texp) As a function, two straight lines, the straight line mu, are fitted by the least square methodxout(texp) Slope and straight line mu1out(texp) The ratio of the slopes is the current multiplication gain M of the EMCCDx
The method has the beneficial effects that: compared with the existing method, the EMCCD multiplication gain measuring method based on multiple groups of data can obtain more accurate multiplication gain, is stable and reliable, and is suitable for engineering application.
Drawings
FIG. 1 is a measurement flow diagram;
FIG. 2 is an EMCCD information flow diagram;
FIG. 3 is a schematic diagram of a straight line fit of a mean value of gray scale of a flat-field light image to an integration time.
Detailed Description
The present invention is described in further detail below with reference to the attached drawing figures.
The invention relates to a multiplication gain measurement method of a multiplication CCD (EMCCD) image sensor, belonging to the technical field of electronic component testing.
The method is based on a photoelectric conversion theory and an image sensor linear model to obtain the following results:
the imaging area, the storage area and the read-out register of the EMCCD are all the same as the structure of the traditional frame transfer CCD, but a series of gain register structures are added between the read-out register and the output amplifier. Based on the structure and operation of the EMCCD, fig. 2 shows an information flow diagram of the EMCCD, in which the system gain K includes the multiplication gain and the output amplifier gain of the EMCCD. Through literature research and mathematical modeling, the following photoelectric conversion formula can be established by fully utilizing the existing research and experimental conclusions:
μ1out(texp)=μ1(texp)-μ1d(texp)=Aμe(texp)
μxout(texp)=μx(texp)-μxd(texp)=Mxe(texp)
wherein:
μ1outwhen the gain is multiplied and the register is controlled to be 0, the EMCCD is exposed to t under flat field lightexpConverting photons into components of electrons in the mean value of the image gray scale signals after time amplification;
μxoutwhen the gain is multiplied and the register is controlled to be x, the EMCCD is exposed to t under flat field lightexpConverting photons into components of electrons in the mean value of the image gray scale signals after time amplification;
texpintegration (exposure) time within the linear section of the EMCCD;
μ1(texp) To multiply the gain control register to 0 under flat field light, the EMCCD exposes texpAverage value of the image gray signal obtained after the time;
μ1d(texp) To multiply the gain control register to 0, the EMCCD is exposed to t under the dark fieldexpAverage value of the image gray signal obtained after the time;
μx(texp) When the register is set to x for multiplication gain control, the EMCCD exposes t under flat field lightexpAverage value of the image gray signal obtained after the time;
μxd(texp) To multiply the gain control register x under dark field, EMCCD exposes texpAverage value of the image gray signal obtained after the time;
a is the system gain of the EMCCD when the multiplication gain is equal to 1;
Mxthe EMCCD multiplication gain with register x is controlled for multiplication gain.
The measuring method is realized as follows:
s1: setting multiplication gain control register as 0, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signals1(texp)、μ1d(texp),
Setting multiplication gain control register as x, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signalsx(texp)、μxd(texp),
S2: by the relation:
μ1out(texp)=μ1(texp)-μ1d(texp)=Aμe(texp)
μxout(texp)=μx(texp)-μxd(texp)=Mxe(texp)
to obtain mu1outAnd muxout
S3: with texpAs an independent variable, μ1out(texp) And muxout(texp) As a function, two straight lines, the straight line mu, are fitted by the least square methodxout(texp) Slope and straight line mu1out(texp) The ratio of the slopes is the current multiplication gain M of the EMCCDx
The invention is further described as follows:
setting multiplication gain control register as 0, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signals1(texp)、μ1d(texp),
Setting multiplication gain control register as x, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signalsx(texp)、μxd(texp),
By the following two formulae:
μ1out(texp)=μ1(texp)-μ1d(texp)=Aμe(texp)
μxout(texp)=μx(texp)-μxd(texp)=Mxe(texp)
measured mu1(texp)、μ1d(texp)、μx(texp)、μxd(texp) Substituting the gain algorithm formula to obtain mu1outAnd muxout
With texpAs an independent variable, μ1out(texp) And muxout(texp) As a function, two straight lines were fitted by the least squares method, as shown in fig. three.
Straight line muxout(texp) Slope and straight line mu1out(texp) The ratio of the slopes is the current multiplication gain M of the EMCCDx
In summary, the present invention belongs to the technical field of electronic device testing, and in particular relates to a method for calculating multiplication gain of an EMCCD (EMCCD) by multiplying gray data of an image sensor exposed under flat field light. The invention comprises the following steps: setting a multiplication gain control register to carry out exposure operation on the EMCCD under the conditions of a flat field and a dark field under different numerical values; measuring the mean value of the image gray signals after photons are converted into electrons and amplified, and according to the given EMCCD photoelectric conversion relation:
μ1out(texp)=μ1(texp)-μ1d(texp)=Aμe(texp)
μxout(texp)=μx(texp)-μxd(texp)=Mxe(texp)
and calculating the multiplication gain of the EMCCD to obtain a multiplication result. The invention provides a stable measurement method for EMCCD multiplication gain based on a multiplication gain control register under different settings, which is stable and effective.

Claims (1)

1. A multiplication CCD multiplication gain fitting measurement method is characterized in that: the method comprises the following steps:
(1) setting multiplication gain control register as 0, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signals1(texp)、μ1d(texp) (ii) a Setting multiplication gain control register as x, and respectively aiming at different exposure time t by EMCCD under flat field light and dark fieldexpObtaining a group of mean values mu of the image gray signalsx(texp)、μxd(texp);
(2) By the relation:
μ1out(texp)=μ1(texp)-μ1d(texp)=Aμe(texp)
μxout(texp)=μx(texp)-μxd(texp)=Mxe(texp)
to obtain mu1outAnd muxoutWherein:
μ1outwhen the gain is multiplied and the register is controlled to be 0, the EMCCD is exposed to t under flat field lightexpConverting photons into components of electrons in the mean value of the image gray scale signals after time amplification;
μxoutwhen the gain is multiplied and the register is controlled to be x, the EMCCD is exposed to t under flat field lightexpConverting photons into components of electrons in the mean value of the image gray scale signals after time amplification;
texpintegration (exposure) time within the linear section of the EMCCD;
μ1(texp) To multiply the gain control register to 0 under flat field light, the EMCCD exposes texpAverage value of the image gray signal obtained after the time;
μ1d(texp) To multiply the gain control register to 0, the EMCCD is exposed to t under the dark fieldexpAverage value of the image gray signal obtained after the time;
μx(texp) When the register is set to x for multiplication gain control, the EMCCD exposes t under flat field lightexpAverage value of the image gray signal obtained after the time;
μxd(texp) To multiply the gain control register x under dark field, EMCCD exposes texpAverage value of the image gray signal obtained after the time;
a is the system gain of the EMCCD when the multiplication gain is equal to 1;
Mxcontrolling EMCCD multiplication gain when the register is x for multiplication gain;
(3) with texpAs an independent variable, μ1out(texp) And muxout(texp) As a function, two straight lines, the straight line mu, are fitted by the least square methodxout(texp) Slope and straight line mu1out(texp) The ratio of the slopes is the current multiplication gain M of the EMCCDx
CN201911222601.6A 2019-12-03 2019-12-03 Multiplication CCD multiplication gain fitting measurement method Expired - Fee Related CN110996095B (en)

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CN112312124A (en) * 2020-10-21 2021-02-02 中国科学院光电技术研究所 Linear correction EMCCD multiplication gain measurement method
CN112540247A (en) * 2020-11-04 2021-03-23 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) Pre-aging method
CN114295565A (en) * 2021-12-28 2022-04-08 上海集成电路装备材料产业创新中心有限公司 Method, apparatus, device and medium for determining quantum efficiency of image sensor

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CN104125456A (en) * 2014-07-15 2014-10-29 中国电子科技集团公司第四十一研究所 CCD (Charge Coupled Device) system gain measurement device and method
CN106840613A (en) * 2017-02-14 2017-06-13 中国科学院新疆理化技术研究所 The method of testing of complementary metal oxide semiconductors (CMOS) photon transfer curve and conversion gain after irradiation
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Publication number Priority date Publication date Assignee Title
CN112312124A (en) * 2020-10-21 2021-02-02 中国科学院光电技术研究所 Linear correction EMCCD multiplication gain measurement method
CN112312124B (en) * 2020-10-21 2022-11-11 中国科学院光电技术研究所 Linear correction EMCCD multiplication gain measurement method
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CN114295565B (en) * 2021-12-28 2023-08-08 上海集成电路装备材料产业创新中心有限公司 Method, apparatus, device and medium for measuring quantum efficiency of image sensor

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