CN110994336A - High-efficiency tunable terahertz laser based on angle tuning - Google Patents
High-efficiency tunable terahertz laser based on angle tuning Download PDFInfo
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- CN110994336A CN110994336A CN201911294380.3A CN201911294380A CN110994336A CN 110994336 A CN110994336 A CN 110994336A CN 201911294380 A CN201911294380 A CN 201911294380A CN 110994336 A CN110994336 A CN 110994336A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/06—Gaseous, i.e. beam masers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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Abstract
A high-efficiency tunable terahertz laser based on angle tuning is composed of a blazed grating and CO for solving the problem that the prior art cannot realize high-efficiency tunable output2The device comprises a gas medium, a ZnSe wafer, a ZnSe window, a germanium etalon, a gold-plated holophote, a stainless steel cavity, a terahertz gain gas and a quartz wafer; blazed grating, CO2The gas medium, the ZnSe wafer, the ZnSe window, the germanium etalon and the quartz wafer are coaxially arranged in sequence; the terahertz gas medium pool is filled with terahertz gain gas; the ZnSe window and the quartz wafer are respectively fixed at the left and right end faces of the stainless steel cavity; the first gold-plated holophote, the second gold-plated holophote and the gold-plated holophote form a holophote group, and the holophote group, the germanium etalon and the quartz wafer form a terahertzA laser resonant cavity mirror; CO is formed by oscillation between the blazed grating and the ZnSe wafer2A pump laser.
Description
Technical Field
The invention relates to the field of terahertz lasers, in particular to a high-efficiency tunable terahertz laser based on angle tuning.
Background
The optical pump terahertz gas laser is a radiation source capable of generating high-power terahertz laser, and mainly comprises a pinhole coupling terahertz laser, a metal mesh-grid coupling terahertz laser, a Zig-Zag terahertz laser, an L-cavity terahertz laser and the like. Wherein the small hole coupling terahertz laser needs to pump CO2Laser is focused to a terahertz gain area, a terahertz gas gain medium cannot be fully utilized, and the quality of a generated terahertz wave beam is poor; the metal mesh-grid coupled terahertz laser adopts a pair of metal mesh grids as a terahertz resonant cavity mirror, but because the coupling efficiency of the mesh grids to pump laser is low, the pump light cannot be fully utilized, so that the conversion efficiency of the terahertz laser is low; the transmission paths of the pump light of the Zig-Zag terahertz laser and the generated terahertz laser are different, so that the output light intensity distribution of the terahertz laser is not uniform, and the system is complex and high in cost; the L-cavity type terahertz laser has the patent name of 'an L-shaped optical pump gas terahertz laser resonant cavity based on a quartz wafer as a beam splitting piece and a laser comprising the resonant cavity', uses the quartz wafer as the beam splitting piece of pump light and terahertz laser, realizes high-efficiency terahertz laser output, but the method only has high efficiency for the terahertz laser with the wavelength of 385 mu m, and cannot be popularized and applied to terahertz lasers with other wavelengths.
Disclosure of Invention
The invention provides an angle-tuning-based high-efficiency tunable terahertz laser, which aims to solve the problem that the conventional optical pump terahertz gas laser cannot realize high-efficiency tunable output and has the characteristics of high conversion efficiency and capability of quickly tuning and outputting a plurality of terahertz laser wavelengths.
The technical scheme for solving the technical problem is as follows:
the high-efficiency tunable terahertz laser based on angle tuning is characterized by comprising a blazed grating and CO2Gas medium, ZnSe wafer, ZnSe window, germanium etalon, gold-plated holophoteThe terahertz gain gas laser comprises a reflector, a stainless steel cavity, terahertz gain gas and a quartz wafer; blazed grating, CO2The gas medium, the ZnSe wafer, the ZnSe window, the germanium etalon and the quartz wafer are coaxially arranged in sequence; blazed grating, CO2CO consisting of gaseous medium and ZnSe wafer2The laser is used as a pumping source of the terahertz laser; the stainless steel cavity, the ZnSe window and the quartz wafer form a terahertz gas medium pool; the terahertz gas medium pool is filled with terahertz gain gas; the ZnSe window and the quartz wafer are respectively fixed at the left and right end faces of the stainless steel cavity; the gold-plated total reflecting mirror I, the gold-plated total reflecting mirror II and the gold-plated total reflecting mirror form a total reflecting mirror group, and the connecting line of the center of the gold-plated total reflecting mirror I and the center of the germanium etalon forms an angle of 40 degrees with the optical axis; the center of the second gold-plated holophote is perpendicular to the central connecting line of the germanium etalon and the optical axis, and the central connecting line of the third gold-plated holophote and the germanium etalon forms 140 degrees with the optical axis; the total reflector group, the germanium etalon and the quartz wafer form a resonant cavity mirror of the terahertz laser; the quartz wafer is used as an output coupling mirror of the terahertz laser; CO is formed by oscillation between the blazed grating and the ZnSe wafer2Pumping laser, wherein the laser enters a terahertz gas medium pool through a ZnSe window and a germanium etalon and excites terahertz gain gas to generate terahertz stimulated radiation; CO 22Pumping laser to transmit ZnSe window and Ge etalon to make CO2The pump laser can be fully absorbed by the terahertz gain gas; the terahertz stimulated radiation oscillates among the reflector group, the germanium etalon and the quartz wafer to form laser, and the laser is finally output by the quartz wafer; when the terahertz laser is incident to the surface of the germanium etalon, the incident angle of the germanium etalon is adjusted due to the multi-beam interference effect, the reflectivity of the terahertz laser is larger than 70%, and therefore the output efficiency of the terahertz laser is improved.
The invention has the beneficial effects that:
1. the germanium etalon coated with the antireflection film is used as a light splitting element, so that pumping light is almost injected into the terahertz resonant cavity without loss to excite terahertz gain gas, and the pumping efficiency is effectively improved.
2. The germanium etalon coated with the antireflection film is used as a light splitting element, so that the generated terahertz laser can be transmitted in the resonant cavity with smaller loss, and the laser oscillation efficiency is effectively improved.
3. By tuning the incident angle pumping wavelength of the germanium etalon, high-efficiency tuning output of a plurality of terahertz laser wavelengths is realized.
Drawings
Fig. 1 is a schematic structural diagram of a high-efficiency tunable terahertz laser based on angle tuning.
Fig. 2a is a diagram of optical path propagation of the terahertz laser resonating between the gold-plated holophote i, the germanium etalon and the quartz wafer when the optimal incident angle θ of the germanium etalon is 58 °.
Fig. 2b is a diagram of optical path propagation of the terahertz laser emitting resonance between the gold-plated holophote III, the germanium etalon and the quartz wafer when the optimal incident angle theta of the germanium etalon is 20 deg.
Fig. 2c is a diagram of optical path propagation of the terahertz laser emitting resonance between the gold-plated holophote II, the germanium etalon and the quartz wafer when the optimal incident angle theta of the germanium etalon is 40 deg.
Fig. 2d is a diagram of optical path propagation of the terahertz laser emitting resonance between the gold-plated second total reflector, the germanium etalon and the quartz wafer when the optimal incident angle θ of the germanium etalon is 33 °.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
As shown in figure 1, the high-efficiency tunable terahertz laser based on angle tuning is composed of a blazed grating 1 and CO2The terahertz gain gas detector comprises a gas medium 2, a ZnSe wafer 3, a ZnSe window 4, a germanium etalon 5, a gold-plated holophote 6, a gold-plated holophote 7, a gold-plated holophote 8, a stainless steel cavity 9, a terahertz gain gas 10 and a quartz wafer 11.
Blazed grating 1, CO2The gas medium 2, the ZnSe wafer 3, the ZnSe window 4, the germanium etalon 5 and the quartz wafer 11 are coaxially arranged in sequence.
Blazed grating 1, CO2The gaseous medium 2 and the ZnSe wafer 3 constitute CO2Laser as pumping source of terahertz laser capable of being modulatedHarmonic output of CO with different wavelengths within 9-11 mu m2And (4) laser. Wherein the output coupling ratio of the ZnSe wafer 3 is 40%.
The stainless steel cavity 9, the ZnSe window 4 and the quartz wafer 11 form a terahertz gas medium pool. The ZnSe window 4 and the quartz wafer 11 are sealed and fixed at the left and right end faces of the stainless steel cavity 9 by stainless steel flanges respectively. Plating an infrared antireflection film of 9-11 μm on the surface of the ZnSe window 4 for CO2The laser transmittance was 98%.
The terahertz gas medium pool is filled with terahertz gain gas 10, the working pressure is 100-3000 Pa, and the terahertz gain gas 10 is CH3F、D2O、CH3OH or NH3And the like.
The first gold-plated holophote 6, the second gold-plated holophote 7 and the third gold-plated holophote 8 form a holophote group, and a connecting line of the center of the first gold-plated holophote 6 and the center of the germanium etalon 5 forms an angle of 40 degrees with an optical axis. The center of the second gold-plated holophote 7 is perpendicular to the central connecting line of the germanium etalon 5 and the optical axis, and the central connecting line of the third gold-plated holophote 8 and the germanium etalon 5 forms 140 degrees with the optical axis.
The total reflector group, the germanium etalon 5 and the quartz wafer 11 form a resonant cavity mirror of the terahertz laser. Wherein the surface of the germanium etalon 5 is plated with an infrared antireflection film of 9-11 μm, and the germanium etalon 5 is used for CO2The transmittance of the laser beam was 95%. The quartz wafer 11 has a transmittance of 78% for the terahertz laser light, and serves as an output coupling mirror of the terahertz laser. The germanium etalon 5 is arranged on the electric control turntable by tuning CO2And the tunable terahertz laser output is obtained by the pumping laser wavelength, the germanium etalon angle and the gold-plated holophote angle. CO 22The tuning range of the pump laser wavelength is 9-11 μm; germanium etalon 5 normal and CO2The adjustment range of the included angle of the pump laser in the optical axis direction is 20-70 degrees.
CO is formed by oscillation between the blazed grating 1 and the ZnSe wafer 32And pumping laser, wherein the laser enters the terahertz gas medium pool through the ZnSe window 4 and the germanium etalon 5, and excites the terahertz gain gas 10 to generate terahertz stimulated radiation. As the ZnSe window 4 and the germanium etalon 5 have high transmissivity to the laser of 9-11 μm,
CO2the laser can efficiently transmit the ZnSe window 4 and the germanium etalon 5, so that the pump laser can be fully absorbed by the terahertz gain gas 10. On the other hand, the terahertz stimulated radiation oscillates among the mirror group, the germanium etalon 5 and the quartz wafer 11 to form laser light, and is finally output from the quartz wafer 11. When the terahertz laser is incident on the surface of the germanium etalon 5, the incident angle of the germanium etalon 5 is adjusted due to the multi-beam interference effect, and the reflectivity of the terahertz laser is larger than 70%, so that the cavity loss caused by reflection loss in the oscillation process of the terahertz laser is greatly reduced, and the output efficiency of the terahertz laser is improved.
In order to realize the tuning output of the terahertz laser, on one hand, the angle of the blazed grating 1 is changed to enable CO to be output2The laser outputs different pump wavelengths, and on the other hand, the incident angle theta of the germanium etalon 5 is adjusted to change, so that the reflectivity of the germanium etalon to the generated different terahertz wavelengths is always kept to be maximum. Meanwhile, in order to maintain terahertz laser oscillation, the first gold-plated reflector 6, the second gold-plated reflector 7 and the third gold-plated reflector 8 are respectively used as resonant cavity mirrors to adapt to different incidence angles theta, namely, the angles of the light rays are adjusted when the light rays are incident on any one of the first gold-plated reflector 6, the second gold-plated reflector 7 and the third gold-plated reflector 8. For example, when CH is used3F as terahertz gain gas, CO2When the laser wavelength is 9.25 μm, the optimal incident angle θ of the germanium etalon 5 is 58 °, the maximum reflectivity of the germanium etalon to the 181 μm terahertz laser is 75.5%, and at this time, the terahertz laser resonates among the first gold-plated holophote 6, the germanium etalon 5 and the quartz wafer 11 to output the 181 μm terahertz laser with high efficiency, and a light path propagation diagram is shown in fig. 2 a; when CO is present2When the laser wavelength is 9.32 μm, the optimal incident angle θ of the germanium etalon 5 is 20 °, the maximum reflectivity of the germanium etalon to the laser light with the wavelength of 360 μm is 72%, and at this time, the terahertz laser light emits resonance among the gold-plated holophote III 8, the germanium etalon 5 and the quartz wafer 11, and outputs the terahertz laser light with the high efficiency of 360 μm, and the propagation diagram of the light path is shown in fig. 2 b; when CO is present2When the laser wavelength is 9.55 μm, the optimum incident angle theta of the germanium etalon 5 is 40 DEG, the maximum reflectivity of the etalon 5 to 496 μm laser is 72%, and at this time, the terahertz laser is plated with goldEmitting resonance among the second holophote 7, the germanium etalon 5 and the quartz wafer 11, outputting 496μm terahertz laser with high efficiency, and the optical path propagation diagram is shown in figure 2 c; when CO is present2When the laser wavelength is 10.22 μm, the optimum incident angle θ of the germanium etalon 5 is 33 °, and the maximum reflectivity thereof to the 496 μm laser is 76%, at this time, the terahertz laser resonates among the second gold-plated holophote 7, the germanium etalon 5 and the quartz wafer 11, and a highly efficient 261 μm terahertz laser is output, and the optical path propagation diagram is shown in fig. 2 d.
Claims (7)
1. The high-efficiency tunable terahertz laser based on angle tuning is characterized by comprising a blazed grating (1) and CO2The terahertz gain gas detector comprises a gas medium (2), a ZnSe wafer (3), a ZnSe window (4), a germanium etalon (5), a gold-plated holophote (6), a gold-plated holophote (7), a gold-plated holophote (8), a stainless steel cavity (9), a terahertz gain gas (10) and a quartz wafer (11);
blazed grating (1), CO2The gas medium (2), the ZnSe wafer (3), the ZnSe window (4), the germanium etalon (5) and the quartz wafer (11) are coaxially arranged in sequence;
blazed grating (1), CO2The gas medium (2) and the ZnSe wafer (3) form CO2The laser is used as a pumping source of the terahertz laser;
the stainless steel cavity (9), the ZnSe window (4) and the quartz wafer (11) form a terahertz gas medium pool; the terahertz gas medium pool is filled with terahertz gain gas (10); the ZnSe window (4) and the quartz wafer (11) are respectively fixed at the left end face and the right end face of the stainless steel cavity (9);
a gold-plated holophote I (6), a gold-plated holophote II (7) and a gold-plated holophote III (8) form a holophote group, and the connecting line of the center of the gold-plated holophote I (6) and the center of the germanium etalon (5) forms an angle of 40 degrees with the optical axis; the central connecting line of the gold-plated holophote II (7) and the central of the germanium etalon (5) is vertical to the optical axis, and the central connecting line of the gold-plated holophote III (8) and the germanium etalon (5) forms 140 degrees with the optical axis; the total reflector group, the germanium etalon (5) and the quartz wafer (11) form a resonant cavity mirror of the terahertz laser; the quartz wafer (11) is used as an output coupling mirror of the terahertz laser;
CO is formed by oscillation between the blazed grating (1) and the ZnSe wafer (3)2Pumping laser, wherein the laser enters a terahertz gas medium pool through a ZnSe window (4) and a germanium etalon (5) and excites a terahertz gain gas (10) to generate terahertz stimulated radiation; CO 22Pumping laser light to transmit ZnSe window (4) and germanium etalon (5) to make CO pass through2The pump laser can be fully absorbed by the terahertz gain gas (10); the terahertz stimulated radiation oscillates among the reflector group, the germanium etalon (5) and the quartz wafer (11) to form laser, and the laser is finally output by the quartz wafer (11); when the terahertz laser is incident to the surface of the germanium etalon (5), the incident angle of the germanium etalon (5) is adjusted due to the multi-beam interference effect, the reflectivity of the terahertz laser is larger than 70%, and therefore the output efficiency of the terahertz laser is improved.
2. The highly efficient tunable terahertz laser based on angle tuning of claim 1, characterized in that the angle of the blazed grating (1) is changed to make CO2The laser outputs different pumping wavelengths, and the incident angle theta of the germanium etalon (5) is adjusted to change, so that the reflectivity of the germanium etalon to the generated different terahertz wavelengths is always kept to be maximum; meanwhile, the gold-plated first reflecting mirror (6), the gold-plated second reflecting mirror (7) and the gold-plated third reflecting mirror (8) are respectively used as resonant cavity mirrors to adapt to different incidence angles theta, namely, the angles of the light rays are adjusted when the light rays enter any one of the gold-plated first reflecting mirror (6), the gold-plated second reflecting mirror (7) and the gold-plated third reflecting mirror (8).
3. The high-efficiency tunable terahertz laser based on angle tuning as claimed in claim 1, wherein the pumping source of the terahertz laser can tune and output CO with different wavelengths within 9-11 μm2Laser, wherein the output coupling ratio of the ZnSe wafer (3) is 40%.
4. The high-efficiency tunable terahertz laser based on angle tuning as claimed in claim 1, wherein the ZnSe window (4) is coated with an infrared antireflection film of 9-11 μm on the surface for CO2The laser transmittance was 98%.
5. The highly efficient tunable terahertz laser based on angle tuning of claim 1, wherein the surface of the germanium etalon (5) is plated with 9-11 μm infrared antireflection film for CO2The transmittance of the laser beam was 95%.
6. The high-efficiency tunable terahertz laser based on angle tuning as claimed in claim 1, wherein the terahertz gas medium pool is filled with terahertz gain gas (10), the working gas pressure is 100-3000 Pa, and the terahertz gain gas (10) is CH3F、D2O、CH3OH or NH3A gas.
7. The highly efficient tunable terahertz laser based on angle tuning according to claim 1, wherein the quartz wafer (11) has a transmittance of 78% for terahertz laser light.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120044959A1 (en) * | 2010-08-19 | 2012-02-23 | Lehigh University | Terahertz source |
| CN103166097A (en) * | 2013-02-26 | 2013-06-19 | 哈尔滨工业大学 | L-type optical pump gas terahertz laser resonant cavity based on that quartz wafer is beam splitting wafer and laser provided with resonant cavity |
| CN207165905U (en) * | 2017-09-25 | 2018-03-30 | 中国工程物理研究院激光聚变研究中心 | A kind of thz laser device system |
| CN110571631A (en) * | 2019-10-08 | 2019-12-13 | 郑州轻工业学院 | Terahertz laser |
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2019
- 2019-12-16 CN CN201911294380.3A patent/CN110994336A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120044959A1 (en) * | 2010-08-19 | 2012-02-23 | Lehigh University | Terahertz source |
| CN103166097A (en) * | 2013-02-26 | 2013-06-19 | 哈尔滨工业大学 | L-type optical pump gas terahertz laser resonant cavity based on that quartz wafer is beam splitting wafer and laser provided with resonant cavity |
| CN207165905U (en) * | 2017-09-25 | 2018-03-30 | 中国工程物理研究院激光聚变研究中心 | A kind of thz laser device system |
| CN110571631A (en) * | 2019-10-08 | 2019-12-13 | 郑州轻工业学院 | Terahertz laser |
Non-Patent Citations (1)
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Application publication date: 20200410 |