CN110993832A - Organic light emitting diode device and manufacturing method thereof - Google Patents
Organic light emitting diode device and manufacturing method thereof Download PDFInfo
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- CN110993832A CN110993832A CN201911233717.XA CN201911233717A CN110993832A CN 110993832 A CN110993832 A CN 110993832A CN 201911233717 A CN201911233717 A CN 201911233717A CN 110993832 A CN110993832 A CN 110993832A
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Abstract
The invention provides an organic light-emitting diode device and a manufacturing method thereof. A method of making an organic light emitting diode device comprising the steps of: providing an array substrate, manufacturing a light-emitting layer, manufacturing a first inorganic layer, manufacturing a strippable film, manufacturing an organic layer, manufacturing a second inorganic layer and stripping the strippable film. The organic light-emitting diode device comprises an array substrate, a light-emitting layer, a first inorganic layer, an organic layer and a second inorganic layer which are arranged in a stacked mode; the edges of the second inorganic layer are flush. According to the invention, the strippable film is arranged before the process of manufacturing the second inorganic layer by the atomic layer deposition technology, and the strippable film is stripped after the second inorganic layer is manufactured, so that the edge of the second inorganic layer is leveled, the phenomenon that an uneven boundary can be formed in the edge area of the second inorganic layer is avoided, the coverage of the second inorganic layer is better, and the film forming effect and the packaging effect are improved.
Description
Technical Field
The invention relates to the field of display, in particular to an organic light-emitting diode device and a manufacturing method thereof.
Background
Due to the increasing demand of flexible display devices in the current market, flexible packaging technology is gaining popularity in the market, and the demand for effective packaging of flexible Organic Light Emitting Diode (OLED) devices is also increasing.
In addition, the conventional encapsulation layer structure generally adopts a form that a first inorganic layer, an organic layer and a second inorganic layer are overlapped. The Atomic Layer Deposition (ALD) technology can be used for manufacturing nano-level inorganic layers, and is widely applied to the field of thin film packaging process due to the advantages of good uniformity of film forming thickness, high film forming quality, low-temperature deposition, good adaptability and the like.
As shown in fig. 1, an organic light emitting diode device 90 includes an array substrate 91, a light emitting layer 92, and an encapsulation layer 93, which are stacked together to form a schematic structural diagram of a conventional organic light emitting diode device. The encapsulation layer 93 includes a first inorganic layer 931, an organic layer 932 and a second inorganic layer 933 stacked in sequence from bottom to top. The mask plates 94 are disposed on two sides of the second inorganic layer 933, and the second inorganic layer 933 is formed by atomic layer deposition. In the process of manufacturing the second inorganic layer 933 by the atomic layer deposition technique, a gap exists between the mask plate 94 and the array substrate 91, which inevitably causes an uneven boundary to be formed in the edge region of the second inorganic layer 933, and the uneven boundary is called a shadow part 9330(shadow), which causes poor coverage of the second inorganic layer 933, and affects the film forming effect and the packaging effect.
Disclosure of Invention
In order to solve the above problems, the present invention provides an organic light emitting diode device and a method for manufacturing the same, which improves a phenomenon that an uneven boundary is formed in an edge region of a second inorganic layer in a process of manufacturing the second inorganic layer by using an atomic layer deposition technique, so that the coverage of the second inorganic layer is better, and a film forming effect and a packaging effect are improved.
In order to achieve the above object, the present invention provides a method for manufacturing an organic light emitting diode device, comprising:
providing an array substrate;
manufacturing a light emitting layer on the array substrate;
manufacturing a first inorganic layer on the light-emitting layer, wherein the first inorganic layer completely covers the light-emitting layer and is arranged on the array substrate;
manufacturing a peelable film on the array substrate around the edge of the first inorganic layer to define a packaging area;
fabricating an organic layer on the first inorganic layer;
fabricating a second inorganic layer on the organic layer and within the encapsulation area, the second inorganic layer covering the first inorganic layer; and
and peeling the peelable film and the second inorganic layer diffused to the peelable film for making the edge of the second inorganic layer flush.
Further, the manufacturing sequence of the step of manufacturing the organic layer on the first inorganic layer and the step of manufacturing the peelable film on the array substrate around the edge of the first inorganic layer for defining the encapsulation area are interchanged.
Further, the peelable film is produced by an ink jet printing method.
Further, the peelable film is made of a material of which the viscosity is weakened after heat treatment or light treatment.
Further, before the step of peeling the peelable film, the method further comprises the steps of: and performing viscosity reduction treatment on the peelable film by heating or light irradiation.
Further, the second inorganic layer is manufactured by an atomic layer deposition method.
Further, the distribution area of the second inorganic layer is smaller than or equal to the size of the encapsulation area.
Further, the first inorganic layer is manufactured by a chemical vapor deposition method or an atomic layer deposition method.
The invention also provides an organic light-emitting diode device manufactured by the manufacturing method of the organic light-emitting diode device, which comprises an array substrate, a light-emitting layer, a first inorganic layer, an organic layer and a second inorganic layer which are arranged in a stacked manner; specifically, the light emitting layer is arranged on the array substrate; the first inorganic layer is arranged on the array substrate and completely covers the light-emitting layer; the organic layer is arranged on the first inorganic layer; the second inorganic layer is arranged on the organic layer and in the packaging area, and covers the first inorganic layer; the edges of the second inorganic layer are flush.
Further, the second inorganic layer completely covers the first inorganic layer; or the second inorganic layer and the first inorganic layer have the same width.
The invention has the beneficial effects that the strippable film is arranged before the process of manufacturing the second inorganic layer by the atomic layer deposition technology, and is stripped after the second inorganic layer is manufactured, so that the edge of the second inorganic layer is flush, the phenomenon that an uneven boundary can be formed in the edge area of the second inorganic layer is avoided, the coverage of the second inorganic layer is better, and the film forming effect and the packaging effect are improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a conventional organic light emitting diode device when the fabrication is completed;
fig. 2 is a flowchart of a method for manufacturing an organic light emitting diode device according to a first embodiment of the present invention;
FIG. 3 is a schematic structural view of FIG. 2 after completion of a step of fabricating a second inorganic layer;
fig. 4 is a flowchart illustrating a method for fabricating an organic light emitting diode device according to a second embodiment of the present invention;
fig. 5 is a schematic structural diagram of an organic light emitting diode device according to a second embodiment of the present invention;
fig. 6 is a schematic structural diagram of another organic light emitting diode device according to a second embodiment of the present invention.
The components in the figure are identified as follows:
1. an array substrate, 2, a light-emitting layer, 3, a first inorganic layer, 4, a peelable film,
5. an organic layer, 6, a second inorganic layer, 10, an encapsulation region,
100. an organic light emitting diode device;
90. an organic light emitting diode device 91, an array substrate 92, a light emitting layer 93, an encapsulation layer,
94. a mask plate 931, a first inorganic layer, 932, an organic layer, 933, a second inorganic layer,
9330. a shaded portion.
Detailed Description
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the present invention, the same or corresponding components are denoted by the same reference numerals regardless of the figure numbers, and when the terms "first", "second", etc. may be used to describe various components throughout the specification, the components are not necessarily limited to the above terms. The above wording is only used to distinguish one component from another component.
Example 1
Referring to fig. 2 and fig. 3, a method for fabricating an organic light emitting diode device 100 according to a first embodiment of the present invention includes:
s1, providing an array substrate 1;
s2, manufacturing a light emitting layer 2 on the array substrate 1;
s3, fabricating a first inorganic layer 3 on the light emitting layer 2, wherein the first inorganic layer 3 completely covers the light emitting layer 2 and is disposed on the array substrate 1;
s4, forming a peelable film 4 on the array substrate 1 around the edge of the first inorganic layer 3 to define an encapsulation region 10;
s5, forming an organic layer 5 on the first inorganic layer 3;
s6, forming a second inorganic layer 6 on the organic layer 5 and in the encapsulation region 10, the second inorganic layer 6 covering the first inorganic layer 3; and
s7, peeling the peelable film 4 and the second inorganic layer 6 diffused onto the peelable film 4, for making the edge of the second inorganic layer 6 flush.
As shown in fig. 3, the step S6 of fabricating the second inorganic layer is completed; on the peelable film 4 there is a second inorganic layer 6 diffused onto the peelable film 4.
In the present embodiment, the peelable film 4 is produced by an ink jet printing method.
In this embodiment, the peelable film 4 is made of a material whose adhesiveness is weakened after heat treatment or light treatment, and preferably, the peelable film 4 includes a UV-weakening film, and the weakening of the adhesiveness of the peelable film 4 can be achieved by irradiating ultraviolet light.
In this embodiment, before the step of peeling the peelable film 4, the method further includes the steps of: the peelable film 4 is subjected to a tack-reducing treatment by heating or light irradiation. This facilitates the peelable film 4 to be peeled.
In this embodiment, the second inorganic layer 6 is formed by atomic layer deposition. The material of the second inorganic layer 6 includes silicon nitride.
In this embodiment, the distribution area of the second inorganic layer 6 is smaller than or equal to the size of the encapsulation area 10.
In this embodiment, the first inorganic layer 3 is fabricated by a chemical vapor deposition method or an atomic layer deposition method. Preferably, the first inorganic layer 3 is fabricated by means of chemical vapor deposition. The material of the first inorganic layer 3 includes silicon oxynitride.
In this embodiment, the organic layer 5 is formed by ink-jet printing. The organic layer 5 is made of Hexamethyldisiloxane (HMDSO) and has hydrophobicity.
Example 2
Referring to fig. 4, the second embodiment includes most of the technical features of the first embodiment, but the difference is that the step S5 of fabricating the organic layer 5 in the first embodiment is disposed between the steps S3 and S4 in the second embodiment, that is, the fabrication sequence of the step S5 and the step S4 are exchanged.
Specifically, in the second embodiment, a method for manufacturing an organic light emitting diode device 100 is provided, which includes the steps of:
s1, providing an array substrate 1;
s2, manufacturing a light emitting layer 2 on the array substrate 1;
s3, fabricating a first inorganic layer 3 on the light emitting layer 2, wherein the first inorganic layer 3 completely covers the light emitting layer 2 and is disposed on the array substrate 1;
s5, forming an organic layer 5 on the first inorganic layer 3;
s4, forming a peelable film 4 on the array substrate 1 around the edge of the first inorganic layer 3 to define an encapsulation region 10;
s6, forming a second inorganic layer 6 on the organic layer 5 and in the encapsulation region 10, the second inorganic layer 6 covering the first inorganic layer 3; and
s7, peeling the peelable film 4 and the second inorganic layer 6 diffused onto the peelable film 4, for making the edge of the second inorganic layer 6 flush.
In a second embodiment, the first inorganic layer 3 is formed by chemical vapor deposition or atomic layer deposition. Preferably, the first inorganic layer 3 is fabricated by atomic layer deposition, and the first inorganic layer 3 is prevented from diffusing to other regions.
The present invention also provides an organic light emitting diode device 100 manufactured by the method of manufacturing the organic light emitting diode device 100 of embodiment 1 or embodiment 2.
Referring to fig. 5 and 6, the organic light emitting diode device 100 includes an array substrate 1, a light emitting layer 2, a first inorganic layer 3, an organic layer 5, and a second inorganic layer 6, which are stacked; specifically, the light emitting layer 2 is disposed on the array substrate 1; the first inorganic layer 3 is arranged on the array substrate 1 and completely covers the light-emitting layer 2; the organic layer 5 is arranged on the first inorganic layer 3; the second inorganic layer 6 is arranged on the organic layer 5 and in the packaging region 10, and the second inorganic layer 6 covers the first inorganic layer 3; the edges of the second inorganic layer 6 are flush.
Since the distribution area of the second inorganic layer 6 is equal to or smaller than the size of the encapsulation area 10. Fig. 5 is a schematic structural diagram of an organic light emitting diode device 100, in which the second inorganic layer 6 completely covers the first inorganic layer 3; alternatively, as shown in fig. 6, which is a schematic structural diagram of another organic light emitting diode device 100, the second inorganic layer 6 and the first inorganic layer 3 have the same width.
The invention has the beneficial effects that the strippable film 4 is arranged before the process of manufacturing the second inorganic layer 6 by the atomic layer deposition technology, and the strippable film 4 is stripped after the second inorganic layer 6 is manufactured, so that the edge of the second inorganic layer 6 is flush, the phenomenon that an uneven boundary can be formed in the edge area of the second inorganic layer 6 is avoided, the coverage of the second inorganic layer 6 is better, and the film forming effect and the packaging effect are improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for manufacturing an organic light emitting diode device, comprising the steps of:
providing an array substrate;
manufacturing a light emitting layer on the array substrate;
manufacturing a first inorganic layer on the light-emitting layer, wherein the first inorganic layer completely covers the light-emitting layer and is arranged on the array substrate;
manufacturing a peelable film on the array substrate around the edge of the first inorganic layer to define a packaging area;
fabricating an organic layer on the first inorganic layer;
fabricating a second inorganic layer on the organic layer and within the encapsulation area, the second inorganic layer covering the first inorganic layer; and
and peeling the peelable film and the second inorganic layer diffused to the peelable film for making the edge of the second inorganic layer flush.
2. The method of claim 1, wherein the step of fabricating the organic layer on the first inorganic layer and the step of fabricating the peelable film on the array substrate around the edge of the first inorganic layer for defining the encapsulation region are reversed in order of fabrication.
3. The method according to claim 1, wherein the peelable film is formed by ink-jet printing.
4. The method for manufacturing an organic light-emitting diode device according to claim 1, wherein the peelable film is made of a material whose viscosity is reduced by heat treatment or light treatment.
5. The method for manufacturing an organic light-emitting diode device according to claim 1, further comprising, before the step of peeling the peelable film:
and performing viscosity reduction treatment on the peelable film by heating or light irradiation.
6. The method of claim 1, wherein the second inorganic layer is formed by atomic layer deposition.
7. The method according to claim 1, wherein a distribution area of the second inorganic layer is equal to or smaller than a size of the encapsulation area.
8. The method according to claim 1, wherein the first inorganic layer is formed by chemical vapor deposition or atomic layer deposition.
9. An organic light emitting diode device manufactured by the method for manufacturing an organic light emitting diode device according to claim 1, comprising:
an array substrate;
the light emitting layer is arranged on the array substrate; and
the first inorganic layer is arranged on the array substrate and completely covers the light-emitting layer;
an organic layer disposed on the first inorganic layer; and
a second inorganic layer disposed on the organic layer and within the encapsulation region, the second inorganic layer covering the first inorganic layer; the edges of the second inorganic layer are flush.
10. The organic light emitting diode device according to claim 9, wherein the second inorganic layer completely encapsulates the first inorganic layer; or the second inorganic layer and the first inorganic layer have the same width.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911233717.XA CN110993832A (en) | 2019-12-05 | 2019-12-05 | Organic light emitting diode device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911233717.XA CN110993832A (en) | 2019-12-05 | 2019-12-05 | Organic light emitting diode device and manufacturing method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461647A (en) * | 2018-03-01 | 2018-08-28 | 云谷（固安）科技有限公司 | packaging method and display device |
| CN108520921A (en) * | 2018-05-23 | 2018-09-11 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and its packaging method |
| CN110473982A (en) * | 2019-07-30 | 2019-11-19 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel encapsulating structure and preparation method thereof |
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- 2019-12-05 CN CN201911233717.XA patent/CN110993832A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461647A (en) * | 2018-03-01 | 2018-08-28 | 云谷（固安）科技有限公司 | packaging method and display device |
| CN108520921A (en) * | 2018-05-23 | 2018-09-11 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and its packaging method |
| CN110473982A (en) * | 2019-07-30 | 2019-11-19 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel encapsulating structure and preparation method thereof |
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Application publication date: 20200410 |