CN110993742B - Crystalline silicon solar panel repairing device and using method thereof - Google Patents
Crystalline silicon solar panel repairing device and using method thereof Download PDFInfo
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- CN110993742B CN110993742B CN201911334288.5A CN201911334288A CN110993742B CN 110993742 B CN110993742 B CN 110993742B CN 201911334288 A CN201911334288 A CN 201911334288A CN 110993742 B CN110993742 B CN 110993742B
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 77
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 238000003860 storage Methods 0.000 claims description 29
- 238000011084 recovery Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 3
- 230000007547 defect Effects 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 8
- 238000000197 pyrolysis Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a crystalline silicon solar panel repairing device and a using method thereof, which can realize the heat treatment and the voltage application of a crystalline silicon battery panel and avoid the defect of a main grid of a battery from being incapable of being externally connected and electrified, wherein the device comprises a hot liquid tank, an object stage and a conductive metal film, and the contact of the flexible metal film can not cause any damage to the surface of an electrode; the flexible insulating film and the liquid pressure are adopted, the pressure is uniformly distributed on the surface of the crystalline silicon solar cell panel, and the pressure is regulated and controlled by the weight of the liquid, so that the problem of stress concentration is avoided; the conductive metal film is in contact with the fine grids and the main grids of the whole front-side battery, and current does not need to pass through the main grids and then reaches the fine grids, so that the dangers that the battery is locally heated due to over-concentrated current or breakdown is caused by over-high current and the like are avoided; the battery is heated by the hot liquid with high heat capacity, and the stability and uniformity of temperature are better compared with heating modes of a heating plate and the like.
Description
Technical Field
The invention relates to the field of solar panels, in particular to a crystalline silicon solar panel repairing device and a using method thereof.
Background
The crystalline silicon solar cell is a mainstream product in the current photovoltaic market, the global yield reaches 115GW in 2018, the domestic yield reaches 65GW, the global accumulated installation exceeds 500GW, and the production usage amount exceeds 1000 hundred million sheets calculated by sheets.
When a large amount of crystalline silicon cell plates are used for a long time, the service life of the crystalline silicon cell plates is nearly 20 years, a large amount of waste assembly products need to be recycled along with the expiration of the service life of the products, and the process of disassembling and recycling the crystalline silicon cells from the waste assemblies is a feasible processing direction; the existing pyrolysis technology can realize large-scale recovery and repair of the crystalline silicon solar panel, but in the pyrolysis process, most of welding strips connected with a main grid of a battery electrode can fall off, most of the main grid of the battery electrode can fall off along with the welding strips, and the conventional welding strips or probe method cannot be adopted to form good contact with an external circuit; meanwhile, performance attenuation caused by increase and accumulation of defects of silicon materials generally exists in the crystalline silicon solar cell after long-time use and pyrolysis treatment.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a crystalline silicon solar cell panel repairing device which can realize heat treatment on a crystalline silicon cell panel and solve the problem of electrode connection caused by the lack of a cell main grid.
The invention further provides a using method of the crystalline silicon solar panel repairing device.
The crystalline silicon solar panel repairing device comprises a hot liquid tank, an object stage and a conductive metal film; the bottom of the hot liquid tank is made of a flexible insulating film, the inner cavity of the hot liquid tank is sequentially divided into a liquid storage heating cavity and a pressure application cavity from top to bottom, a heating device is arranged in the liquid storage heating cavity, the liquid storage heating cavity and the pressure application cavity are mutually independent and are communicated through a switch pipeline, and the switch pipeline is controlled through an electric pump; the objective table comprises a conductive metal plate, the conductive metal plate is used for placing a crystalline silicon solar panel, and the conductive metal plate is connected with an electrode of an external power supply; the conductive metal film is positioned between the bottom surface of the flexible insulating film and the crystalline silicon solar panel and is connected with an electrode of an external power supply.
According to some embodiments of the present invention, a metal plate for separating the liquid storage heating chamber and the pressure applying chamber is installed in the inner cavity of the hot liquid tank, and the metal plate is made of a rigid metal material with high thermal conductivity.
According to some embodiments of the invention, the conductive metal film is adhered or plated on the bottom surface of the flexible insulating film.
According to some embodiments of the invention, the stage further comprises an insulating board positioned at the bottom of the conductive metal plate.
According to some embodiments of the invention, the heating device is a heating tube or a heating film.
According to some embodiments of the invention, the flexible insulating film has a thickness of 0.001 to 1mm, and the conductive metal film has a thickness of 0.00001mm to 0.5 mm.
According to some embodiments of the invention, the liquid storage heating chamber is provided with a circulation pump.
The use method of the crystalline silicon solar panel repairing device according to the embodiment of the second aspect of the invention comprises the following steps:
firstly, pumping part of liquid in the pressure applying cavity in the hot liquid tank into the liquid storage heating cavity through the electric pump, heating the hot liquid to a preset temperature, wherein the flexible insulating film is recessed due to negative pressure, meanwhile, the conductive metal film is recessed along with the flexible insulating film, and the conductive metal film is connected with an electrode of an external power supply;
placing a crystalline silicon solar panel on the conductive metal plate, enabling a front electrode of the crystalline silicon solar panel to face upwards to the bottom of the hot liquid tank, and connecting the conductive metal plate with an electrode of an external power supply;
placing the hydrothermal tank which finishes the first step on the crystalline silicon solar cell panel which finishes the previous step, opening the switch pipeline to enable the liquid storage heating cavity to be communicated with the pressure application cavity, enabling hydrothermal liquid in the liquid storage heating cavity to quickly fill the pressure application cavity, enabling the hydrothermal liquid to press the bottom surface of the flexible insulating film, and enabling the conductive metal film to be uniformly pressed on the surface of the crystalline silicon solar cell panel through the flexible insulating film so as to enable the conductive metal film to be tightly attached to the electrode grid line on the surface of the crystalline silicon solar cell panel;
step four, after the previous step is completed, an external power supply is switched on, so that current is uniformly injected into the surface of the cell through the conductive metal film and the conductive metal plate, and the heat of the hydrothermal solution is rapidly conducted onto the crystalline silicon solar panel through the conductive metal film, so that the temperature of the crystalline silicon solar panel reaches the processing set temperature;
and fifthly, after the last step is finished, starting the electric pump to pump part of the hot liquid in the pressure application cavity into the liquid storage heating cavity, enabling the flexible insulating film and the conductive metal film to be concave upwards and separated from the battery, lifting the hot liquid box, and taking out the crystalline silicon battery.
According to some embodiments of the invention, the liquid heating temperature in step one is from 50 ℃ to 300 ℃.
According to some embodiments of the invention, the external supply voltage in step four is 1V-30V.
According to the crystalline silicon solar panel processing device and the using method thereof provided by the embodiment of the invention, at least the following beneficial effects are achieved:
1. the flexible metal film contact does not cause any damage to the electrode surface.
2. By adopting the flexible insulating film and the liquid pressure, the pressure is uniformly distributed on the surface of the crystalline silicon solar cell panel, and the pressure is regulated and controlled by the weight of the liquid, so that the dangers of surface damage caused by stress concentration, cracking, breaking and the like of the cell sheet do not exist.
3. The thin grid and the main grid of the whole front battery are contacted through the conductive metal film, current does not need to pass through the main grid and then reaches the thin grid, and dangers that the battery is locally heated due to over-concentrated current or breakdown is caused by over-high current are avoided.
4. The battery is heated by the hot liquid with high heat capacity, and the temperature stability and uniformity are better compared with heating plates and other modes.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic view of the initial state of the present invention;
FIG. 2 is a schematic view of the present invention showing fluid being pumped from the pressurizing chamber into the reservoir heating chamber;
fig. 3 is a schematic diagram of the liquid in the liquid storage heating cavity of the invention when being pumped into the pressure application cavity and pressed towards the crystalline silicon solar panel.
The device comprises a hot liquid box 100, a flexible insulating film 101, a liquid storage heating cavity 110, a pressure applying cavity 120, a heating device 130, a switch pipeline 140 and a metal plate 150; an object stage 200, a conductive metal plate 210, and an insulating board 220; conductive metal film 300, electric pump 400.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The existing pyrolysis technology can realize large-scale disassembly and recovery of a photovoltaic module, but in the pyrolysis process, most of welding strips connected with a main grid of a battery electrode can fall off, and most of the main grid of the battery electrode can fall off along with the welding strips, a front electrode of a crystalline silicon solar panel generally consists of a fine grid line and a main grid line, and the width of the fine grid line is generally dozens of microns and is used for collecting surface current; the width of the main grid is 1-2 mm, and the main grid is vertically crossed with the thin grid and is used for collecting the current of the thin grid line and connecting the thin grid line with the outside to output the current. The battery uses strip-shaped electrode main grids, a circuit is formed by connecting a welding strip or a probe, and the disassembled battery cannot form good contact with an external circuit by adopting a conventional welding strip or probe method due to the fact that most of the main grids fall off, so that the battery is scrapped.
The performance of the crystalline silicon solar panel after long-time use and pyrolysis treatment is generally reduced due to the increase and accumulation of defects of the silicon material.
Referring to fig. 1 to 3, the crystalline silicon solar panel repair processing device according to the embodiment of the first aspect of the invention comprises a hot liquid tank 100, an object stage 200 and a conductive metal film 300.
The bottom of the hot liquid tank 100 is made of a flexible insulating film 101, the inner cavity of the hot liquid tank 100 is sequentially divided into a liquid storage heating cavity 110 and a pressure applying cavity 120 from top to bottom, a heating device 130 is arranged in the liquid storage heating cavity 110, the liquid storage heating cavity 110 and the pressure applying cavity 120 are mutually independent and are communicated through a switch pipeline 140, and the switch pipeline 140 is controlled by an electric pump 400; the battery is heated by the hot liquid with high heat capacity, and the temperature stability and uniformity are better compared with heating plates and other modes.
The conductive metal film 300 is positioned between the bottom surface of the flexible insulating film 101 and the crystalline silicon solar cell panel, the conductive metal film 300 is connected with an electrode of an external power supply, the voltage of the external power supply is 1-30V, the conductive metal film 300 is tightly attached to a fine grid on the surface of the crystalline silicon solar cell panel, good circuit connection is formed between the conductive metal film 300 and the crystalline silicon solar cell panel, and meanwhile, the cell is prevented from being cracked due to over-concentrated pressure; meanwhile, due to the fact that welding and probe contact are small-area point or line contact, current is concentrated, the conductive metal film 300 is in contact with the fine grids and the main grids of the whole front crystalline silicon solar panel, the current does not need to pass through the main grids and then reaches the fine grids, and dangers that the local heating of the battery is caused due to the fact that the current is too concentrated or breakdown is caused due to the fact that the current is too large are avoided.
The object stage 200 comprises a conductive metal plate 210, the conductive metal plate 210 is used for placing a crystalline silicon solar panel, and the conductive metal plate 210 is connected with an electrode of an external power supply;
in order to eliminate performance attenuation caused by defect increase and accumulation of the silicon material, the conductive metal plate 210 and the conductive metal film 300 are simultaneously connected with an external power supply, the voltage of the external power supply is 1V-30V, so that the crystalline silicon solar panel finishes electric injection, and meanwhile, the flexible insulating film 101 and the conductive metal film 300 are used for heating to inject energy into the silicon wafer, so that the state of defect impurities formed in the silicon wafer is changed, the defect is disabled, and the performance of the disassembled crystalline silicon cell is improved.
The hot liquid box 100 is provided with a metal plate 150 for separating the liquid storage heating chamber 110 and the pressure applying chamber 120 in the inner cavity, and the metal plate 150 is made of a rigid metal material with high thermal conductivity.
The conductive metal film 300 can be adhered to the bottom surface of the flexible insulating film 101 through a high-temperature-resistant adhesive material, or can be independently placed on the surface of the crystalline silicon solar cell panel, and the conductive metal film 300 can also be plated on the flexible insulating film 101 through other film plating methods such as electroplating and evaporation plating.
Wherein the thickness of the flexible insulating film 101 is 0.001mm-1mm, and the thickness of the conductive metal film 300 is 0.00001mm-0.5 mm.
The stage 200 further includes an insulating board 220 at the bottom of the conductive metal plate 210 for preventing heat from being emitted and conducting electricity.
The heating device 130 is a heating tube or a heating film or a heating plate, and a circulation pump 111 is installed in the liquid storage heating cavity 110 for stirring the liquid to make the temperature more uniform.
The use method of the crystalline silicon solar panel repairing device according to the embodiment of the second aspect of the invention comprises the following steps:
firstly, pumping part of liquid in a pressure applying cavity 120 in a hot liquid tank 100 into a liquid storage heating cavity 110 through an electric pump 400, heating the hot liquid to a preset temperature, wherein a flexible insulating film 101 is recessed due to negative pressure, a conductive metal film 300 is recessed along with the flexible insulating film 101, and the conductive metal film 300 is connected with an electrode of an external power supply;
placing the crystalline silicon solar panel on the conductive metal plate 210, enabling a front electrode of the crystalline silicon solar panel to face upwards to the bottom of the hot liquid tank 100, and connecting the conductive metal plate 210 with an electrode of an external power supply;
placing the hydrothermal tank 100 which completes the first step on the crystalline silicon solar cell panel which completes the previous step, opening a switch pipeline 140 to enable the liquid storage heating cavity 110 to be communicated with the pressure applying cavity 120, enabling hydrothermal liquid in the liquid storage heating cavity 110 to quickly fill the pressure applying cavity 120 to enable the hydrothermal liquid to be pressed to the bottom surface of the flexible insulating film 101, and enabling the conductive metal film 300 to be evenly pressed on the surface of the crystalline silicon solar cell panel through the flexible insulating film 101 to enable the conductive metal film 300 to be tightly attached to the electrode grid line on the surface of the crystalline silicon solar cell panel;
step four, after the previous step is completed, an external power supply is switched on, so that current is uniformly injected into the surface of the cell through the conductive metal film 300 and the conductive metal plate 210, and the heat of the hydrothermal solution is rapidly conducted onto the crystalline silicon solar panel through the conductive metal film 300, so that the temperature of the crystalline silicon solar panel reaches the processing set temperature;
and step five, after the previous step is completed, starting the electric pump 400 to pump part of the hot liquid in the pressure applying cavity 120 into the liquid storage heating cavity 110, enabling the flexible insulating film 101 and the conductive metal film 300 to be concave upwards and separated from the battery, lifting the hot liquid box 100, and taking out the crystalline silicon battery.
Wherein, the heating temperature of the liquid in the first step is 50-300 ℃.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (10)
1. A crystalline silicon solar panel repairing device is characterized by comprising:
the hot liquid tank (100) is characterized in that the bottom of the hot liquid tank (100) is made of a flexible insulating film (101), the inner cavity of the hot liquid tank (100) is sequentially divided into a liquid storage heating cavity (110) and a pressure application cavity (120) from top to bottom, a heating device (130) is arranged in the liquid storage heating cavity (110), the liquid storage heating cavity (110) and the pressure application cavity (120) are mutually independent and are communicated through a switch pipeline (140), and the switch pipeline (140) is controlled through an electric pump (400);
the object stage (200), the object stage (200) comprises a conductive metal plate (210), the conductive metal plate (210) is used for placing the crystalline silicon solar panel, and the conductive metal plate (210) is connected with an electrode of an external power supply;
the conductive metal film (300) is located between the bottom surface of the flexible insulating film (101) and the crystalline silicon solar panel, the conductive metal film (300) is in contact with the fine grids and the main grids of the crystalline silicon solar panel, and the conductive metal film (300) is connected with an electrode of an external power supply.
2. The crystalline silicon solar panel repair treatment device according to claim 1, wherein a metal plate (150) for separating the liquid storage heating cavity (110) and the pressure application cavity (120) is arranged in an inner cavity of the hot liquid tank (100), and the metal plate (150) is made of a rigid material with high thermal conductivity.
3. The crystalline silicon solar panel repair treatment device according to claim 1, characterised in that the conductive metal film (300) is bonded or coated on the bottom surface of the flexible insulating film (101).
4. The crystalline silicon solar panel repair treatment device according to claim 1, characterized in that said object table (200) further comprises an insulating thermal baffle (220) located at the bottom of said conductive metal plate (210).
5. The crystalline silicon solar panel repair treatment device according to claim 1, wherein the heating device (130) is a heating tube or a heating film or a heating plate.
6. The crystalline silicon solar panel repair treatment device according to claim 1, wherein the flexible insulating film (101) has a thickness of 0.001mm to 1mm, and the conductive metal film (300) has a thickness of 0.00001mm to 0.5 mm.
7. The crystalline silicon solar panel repair processing device according to claim 1, characterized in that a circulation pump (111) is installed in the liquid storage heating cavity (110).
8. A crystalline silicon solar panel heating recovery processing method, characterized in that, the crystalline silicon solar panel repair processing device of any one of claims 1 to 7 is used, and the method comprises the following steps:
firstly, part of liquid in the pressure application cavity (120) in the hot liquid tank (100) is pumped into the liquid storage heating cavity (110) through the electric pump (400) and heated to hot liquid at a preset temperature, the flexible insulating film (101) is recessed due to negative pressure, meanwhile, the conductive metal film (300) is recessed along with the flexible insulating film (101), and the conductive metal film (300) is connected with an electrode of an external power supply;
secondly, placing the crystalline silicon solar panel on the conductive metal plate (210), enabling a front electrode of the crystalline silicon solar panel to face upwards to the bottom of the hot liquid tank (100), and connecting the conductive metal plate (210) with an electrode of an external power supply;
placing a hot liquid box (100) which completes the first step on the crystalline silicon solar panel which completes the previous step, opening a switch pipeline (140) to enable a liquid storage heating cavity (110) to be communicated with a pressure application cavity (120), quickly filling the pressure application cavity (120) with hot liquid in the liquid storage heating cavity (110), enabling the hot liquid to be pressed to the bottom surface of the flexible insulating film (101), and uniformly pressing the conductive metal film (300) on the surface of the crystalline silicon solar panel through the flexible insulating film (101) to enable the conductive metal film (300) to be tightly attached to an electrode grid line on the surface of the crystalline silicon solar panel;
step four, after the previous step is completed, an external power supply is switched on, so that current is uniformly injected into the surface of the cell through the conductive metal film (300) and the conductive metal plate (210), and the heat of the hot liquid is rapidly conducted onto the crystalline silicon solar panel through the conductive metal film (300), so that the temperature of the crystalline silicon solar panel reaches the processing set temperature;
and step five, after the last step is finished, starting the electric pump (400) to pump part of hot liquid in the pressure application cavity (120) into the liquid storage heating cavity (110), enabling the flexible insulating film (101) and the conductive metal film (300) to indent upwards and separate from the battery, lifting the hot liquid tank (100), and taking out the battery.
9. The heating recovery processing method of the crystalline silicon solar panel according to claim 8, wherein the liquid heating temperature in the first step is 50-300 ℃.
10. The heating recovery processing method for the crystalline silicon solar panel according to claim 8, wherein the external power voltage in the fourth step is 1V-30V.
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| CN201911334288.5A CN110993742B (en) | 2019-12-23 | 2019-12-23 | Crystalline silicon solar panel repairing device and using method thereof |
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| CN201911334288.5A CN110993742B (en) | 2019-12-23 | 2019-12-23 | Crystalline silicon solar panel repairing device and using method thereof |
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| US7029267B2 (en) * | 2003-10-23 | 2006-04-18 | Saint- Gobain Technical Fabrics Canada, Ltd | Reusable vacuum bag and methods of its use |
| US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
| KR20120002885A (en) * | 2010-07-01 | 2012-01-09 | 엘지디스플레이 주식회사 | System for inspecting thin film solar cell and method of inspecting thin film solar cell using the same |
| CN107833942B (en) * | 2017-11-24 | 2024-01-23 | 河北羿珩科技有限责任公司 | Multifunctional laminating machine and application method thereof |
| CN108598220A (en) * | 2018-05-17 | 2018-09-28 | 北京汉能光伏投资有限公司 | A kind of prosthetic device of encapsulation defect to battery component |
| CN211238276U (en) * | 2019-12-23 | 2020-08-11 | 顺德中山大学太阳能研究院 | Crystalline silicon solar cell panel repairing device |
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