CN110993737A - AlGaN-based homogeneous integrated optoelectronic chip and preparation method thereof - Google Patents
AlGaN-based homogeneous integrated optoelectronic chip and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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Abstract
The invention provides a preparation method of an AlGaN-based homogeneous integrated optoelectronic chip, which comprises the following steps: selecting a patterned substrate having a chamfered angle on the C-side, the chamfered angle having an angle greater than 0.1 ° and less than 90 °; epitaxially growing an AlN template on the patterned substrate; growing an AlGaN-based device structure on the AlN template; positioning an AlGaN material wing area and a mesa area which are epitaxially grown on a patterned substrate; and preparing a light detection device, a light emitting device and an optical waveguide structure in the corresponding region to obtain the AlGaN-based homogeneous integrated optoelectronic chip. The method can improve the working efficiency of the electronic chip.
Description
Technical Field
The invention relates to the field of semiconductor technology and communication, in particular to an AlGaN-based homogeneous integrated optoelectronic chip and a preparation method thereof.
Background
The homogeneous integrated photoelectronic chip is one chip with integrated light emitting device, light waveguide and light detecting device, and has light emitting and light detecting device with quantum well structure and thus the same technological process. The chip has wide application prospect in the fields of optical communication systems, optical interconnection memory systems, photoelectric processor systems and the like. The working principle is that the optical detector in the chip is used for detecting optical signals, the detected signals are modulated at the same time, and then the signals are output in an optical form through the light-emitting device, so that the signals are transmitted. Because the optical signal is propagated along the straight line, it is easy to shield, and its frequency is far higher than that of existent communication frequency band, so that it has the advantages of quick information transmission and strong confidentiality, etc.
Meanwhile, because ultraviolet light has the advantages of high frequency, no interference of visible light, easiness in concealment and the like, the ultraviolet photoelectric device has wide application prospect as a signal transmission unit (homogeneous integrated optical chip). For ultraviolet homogeneous integration optical chips, AlGaN-based semiconductor materials are ideal device preparation materials. The AlGaN is a direct forbidden band semiconductor, and the forbidden band width of the AlGaN is continuously adjustable between 3.4-6.2 eV along with the change of Al components, so that most ultraviolet bands are covered, and the AlGaN has stable physicochemical properties and good application potential.
However, one of the main reasons for restricting the performance of the iii-nitride homogeneous integrated optoelectronic chip is that the coincidence degree of the response frequency bands of the detection device and the light emitting device in the optical chip is low, which finally affects the signal transmission rate. The phenomenon is caused because the light emitting of the homogeneous integrated optoelectronic chip is consistent with the component of the detector quantum well on a plane substrate or a small bevel angle substrate, and the homogeneous integrated optoelectronic chip has the same effective forbidden bandwidth before working. However, due to the polarization of group iii nitride semiconductors, quantum well structures in the device can exhibit a Quantum Confined Stark Effect (QCSE) that can result in a red shift in the response band of the device. The forward bias of the light-emitting device can increase the QCSE effect, so that the effective forbidden bandwidth of the quantum well of the light-emitting device is reduced compared with that before working, and the light-emitting waveband is red-shifted; the reverse bias of the detector can reduce the QCSE effect, so that the effective forbidden band width of the quantum well of the detection device is increased compared with that before the operation, and the detection waveband is blue-shifted. Therefore, for the AlGaN-based homogeneous integrated optoelectronic chip with the same components and quantum well structure, the detection and light-emitting wave band separation phenomena are more serious, and the working efficiency of the device is reduced.
In order to overcome the phenomenon and improve the working efficiency of the AlGaN-based homogeneous integrated optical chip, the invention provides a method for epitaxially growing an AlGaN-based homogeneous integrated optoelectronic chip structure on a large-chamfer angle patterned substrate and preparing a light emitting and detecting device and an optical waveguide structure through a selected area so as to increase the coincidence ratio of light emitting and detecting wave bands in the optical chip. By the method, the signal conversion efficiency of the AlGaN-based homogeneous integrated optoelectronic chip can be effectively improved, and the data transmission speed is increased.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an AlGaN-based homogeneous integrated optoelectronic chip capable of improving the working efficiency of the optoelectronic chip and a preparation method thereof.
According to an object of the invention, a method for preparing an AlGaN-based homogeneous integrated optoelectronic chip is provided, which comprises the following steps:
selecting a patterned substrate having a chamfered angle on the C-side, the chamfered angle having an angle greater than 0.1 ° and less than 90 °;
epitaxially growing an AlN template on the patterned substrate;
growing an AlGaN-based device structure on the AlN template;
positioning an AlGaN material wing area and a mesa area which are epitaxially grown on a patterned substrate;
and preparing a light detection device and a light emitting device in corresponding regions to obtain the AlGaN-based homogeneous integrated optoelectronic chip.
In one embodiment, the patterned substrate material is sapphire, silicon, or silicon carbide.
In one embodiment, the AlN template is epitaxially grown using metal-organic chemical vapor deposition, molecular beam epitaxy, or hydride vapor phase epitaxy.
In one embodiment, the method of positioning is optical microscopy, electroluminescence spectroscopy, cathodofluorescence spectroscopy, or scanning electron microscopy.
In one embodiment, the AlGaN-based device structure includes n-AlGaN, a quantum well structure, p-AlGaN, and an electrode.
In one embodiment, the epitaxially grown AlGaN material wing region and mesa region include: epitaxially growing an n-AlGaN material on the AlN template and forming a mesa area, wherein the Al component of the AlGaN material of the mesa area is lower than that of other parts;
epitaxially growing an AlGaN quantum well structure on the n-AlGaN material to serve as an active region;
and depositing a p-AlGaN material on the quantum well active region.
In one embodiment, the preparation of the light detecting device and the light emitting device in the corresponding regions is as follows:
preparing a light-emitting device on the mesa region, and applying forward bias during working to reduce the effective forbidden bandwidth of the quantum well during working of the light-emitting device; and preparing the optical detection device in the wing region, and applying reverse bias voltage during working so as to increase the effective forbidden bandwidth of the quantum well during working of the detection device.
In one embodiment, when the optical detection device and the light emitting device are manufactured in the corresponding regions, a p-type region electrode and an n-type region electrode which are suitable for the light emitting device and the detection device are respectively manufactured on the separated p-AlGaN material and the corresponding n-AlGaN by using an electron beam evaporation method, a thermal evaporation method or a rapid annealing method;
and the light-emitting device and the detecting device are spatially separated through photoetching and etching, and a part of the n-AlGaN surface is exposed to prepare an electrode.
According to another object of the invention, an AlGaN-based homogeneous integrated optoelectronic chip obtained by the preparation method is also provided.
The invention has the beneficial effects that: compared with the prior art, the method utilizes the difference of atomic mobility of Al and Ga to ensure that the components of the mesa region and the wing region of the AlGaN material which is epitaxially grown on the graphical substrate with the oblique angle on the C surface are slightly different, so that the forbidden bandwidth of the quantum well active region before the operation is slightly different. Through test positioning, a light-emitting device is prepared on a mesa area with a higher Al component (a slightly larger forbidden band width), and a forward bias is applied during working, so that the effective forbidden band width of a quantum well is reduced during working of the light-emitting device; the optical detection device is prepared in a wing area with a low Al component (a slightly smaller forbidden band width), and reverse bias is applied during working, so that the effective forbidden band width of the quantum well is increased during working of the detection device. By regulating and controlling growth parameters such as substrate beveling angle and growth rate, the difference of forbidden band widths of the light-emitting device and the detecting device before work can be regulated and controlled. After applying bias voltages in different directions during the operation of the device, the coincidence degree of the light emitting and detecting wave bands can be improved and even completely coincided. Therefore, the data conversion rate of the AlGaN-based homogeneous integrated optoelectronic chip can be greatly improved, the data transmission speed is increased, and the working efficiency is improved.
Drawings
FIG. 1 is a schematic flow chart of a method for fabricating an AlGaN-based homogeneous integrated optoelectronic chip according to an embodiment;
FIG. 2a is a front view of a light emitting device and a detecting device fabricated in an AlGaN-based homogeneous integration optoelectronic chip according to an embodiment;
FIG. 2b is a top view of a light emitting device and a detecting device fabricated in one embodiment of an AlGaN based homogeneous integrated optoelectronic chip;
FIG. 2c is a side view of a light emitting device and a detecting device fabricated in one embodiment of an AlGaN based homogeneous integrated optoelectronic chip;
FIG. 3a is a schematic diagram of the energy band structure of the quantum well active region before and during operation of the light emitting device and the detecting device of the conventional electronic chip;
fig. 3b is a schematic diagram of an energy band structure of a quantum well active region before and during operation of a light emitting device and a detecting device of the AlGaN-based homogeneous integrated optoelectronic chip according to an embodiment.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer.
Referring to fig. 1, the present invention provides a method for preparing an AlGaN-based homogeneous integrated optoelectronic chip, including:
s110, selecting a patterned substrate with a chamfered angle on a C surface, wherein the angle of the chamfered angle is more than 0.1 degrees and less than 90 degrees;
specifically, in one embodiment, the patterned substrate material is sapphire, silicon, or silicon carbide.
S120, epitaxially growing an AlN template on the patterned substrate;
the means for epitaxially growing the AlN template material include, but are not limited to, Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and other epitaxial growth techniques; the active region of the optoelectronic chip structure is mainly of a quantum well structure;
s130, growing an AlGaN-based device structure on the AlN template;
specifically, in one embodiment, an AlGaN-based device structure includes n-AlGaN, a quantum well structure, p-AlGaN, and an electrode.
S140, positioning an AlGaN material wing area and a mesa area which are epitaxially grown on the patterned substrate;
specifically, in an embodiment, during the process of epitaxially growing the AlGaN material device structure on the patterned substrate by using the MOCVD method, the composition of the AlGaN material in the mesa region of the lateral epitaxial growth pattern is slightly higher than that of the wing region due to the mobility difference between Al and Ga atoms.
Specifically, in one embodiment, the method of localization is by optical microscopy, electroluminescence spectroscopy, cathodoluminescence spectroscopy, or scanning electron microscopy.
Specifically, in one embodiment, the epitaxially grown AlGaN material wing region and mesa region include: epitaxially growing an n-AlGaN material on the AlN template and forming a mesa area, wherein the Al component of the AlGaN material of the mesa area is lower than that of other parts;
epitaxially growing an AlGaN quantum well structure on the n-AlGaN material to serve as an active region;
and depositing a p-AlGaN material on the quantum well active region.
S150, preparing a light detection device and a light emitting device in the corresponding areas to obtain the AlGaN-based homogeneous integrated optoelectronic chip.
Specifically, in an embodiment, the preparing the light detecting device and the light emitting device in the corresponding regions is: preparing a light-emitting device on the mesa region, and applying forward bias during working to reduce the effective forbidden bandwidth of the quantum well during working of the light-emitting device; and preparing the optical detection device in the wing region, and applying reverse bias voltage during working so as to increase the effective forbidden bandwidth of the quantum well during working of the detection device.
Specifically, in one embodiment, when the optical detection device and the light emitting device are manufactured in the corresponding regions, a p-type region electrode and an n-type region electrode suitable for the light emitting device and the detection device are respectively manufactured on the p-AlGaN material and the corresponding n-AlGaN which are already separated by using an electron beam evaporation method, a thermal evaporation method or a rapid annealing method;
and the light-emitting device and the detecting device are spatially separated through photoetching and etching, and a part of the n-AlGaN surface is exposed to prepare an electrode.
Example 1
Referring to fig. 2a to 2c, in a third view of the device structure provided in this embodiment, the method for preparing an AlGaN-based homogeneous integrated optoelectronic chip provided in the present invention includes the following steps:
a desired patterned substrate 21 of epitaxial AlGaN material, C-plane (i.e., (0001) -plane) sapphire patterned substrate, with a chamfer angle of 0.2 ° to the direction along the m-plane was selected.
The AlN material is epitaxially grown as a template 22 using a two-step growth method.
And epitaxially growing an n-AlGaN material 23 on the AlN template to form an AlGaN material wing area and a mesa area, wherein the Ga atomic mobility is greater than that of Al atoms, so that the Ga atomic mobility is more favorable for moving to the mesa area for nucleation and growth, and the Al component of the AlGaN material of the mesa area is lower.
An AlGaN quantum well structure 24 is epitaxially grown on the n-AlGaN material as the active region.
A p-AlGaN material 25 is deposited over the quantum well active region.
On the separated p-AlGaN material and the corresponding n-AlGaN, a p-type region electrode 26 and an n-type region electrode 27 which are suitable for a light-emitting device and a detection device are respectively prepared by methods of electron beam evaporation or thermal evaporation, rapid annealing and the like.
The light emitting device and the detecting device are separated through photoetching, etching and other technologies, and part of the n-AlGaN surface is exposed to prepare an electrode, wherein 28 is an etching channel to separate the light emitting device and the detecting device.
Referring to fig. 3a and 3b, fig. 3a is a schematic diagram of an energy band structure of a quantum well active region before and during operation of a light emitting device and a detecting device of a conventional electronic chip; fig. 3b is a schematic diagram of an energy band structure of a quantum well active region before and during operation of a light emitting device and a detecting device of the AlGaN-based homogeneous integrated optoelectronic chip according to an embodiment.
According to the specific embodiment, the difference of atomic mobility of Al and Ga is utilized, so that the components of the mesa region and the wing region of the AlGaN material epitaxially grown on the patterned substrate with the oblique angle on the C surface are slightly different, and the forbidden bandwidth of the quantum well active region before the operation is slightly different. Through test positioning, a light-emitting device is prepared on a mesa area with a higher Al component (a slightly larger forbidden band width), and a forward bias is applied during working, so that the effective forbidden band width of a quantum well is reduced during working of the light-emitting device; the optical detection device is prepared in a wing area with a low Al component (a slightly smaller forbidden band width), and reverse bias is applied during working, so that the effective forbidden band width of the quantum well is increased during working of the detection device. By regulating and controlling growth parameters such as substrate beveling angle and growth rate, the difference of forbidden band widths of the light-emitting device and the detecting device before work can be regulated and controlled. After applying bias voltages in different directions during the operation of the device, the coincidence degree of the light emitting and detecting wave bands can be improved and even completely coincided. Therefore, the data conversion rate of the AlGaN-based homogeneous integrated optoelectronic chip can be greatly improved, the data transmission speed is increased, and the working efficiency is improved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (9)
1. A preparation method of an AlGaN-based homogeneous integrated optoelectronic chip is characterized by comprising the following steps:
selecting a patterned substrate having a chamfered angle on the C-side, the chamfered angle having an angle greater than 0.1 ° and less than 90 °;
epitaxially growing an AlN template on the patterned substrate;
growing an AlGaN-based device structure on the AlN template;
positioning an AlGaN material wing area and a mesa area which are epitaxially grown on a patterned substrate;
and preparing a light detection device and a light emitting device in corresponding regions to obtain the AlGaN-based homogeneous integrated optoelectronic chip.
2. The method of claim 1, wherein the patterned substrate material is sapphire, silicon, or silicon carbide.
3. The method according to claim 1, wherein the step of epitaxially growing the AlN template is performed by metal-organic chemical vapor deposition, molecular beam epitaxy, or hydride vapor phase epitaxy.
4. The method of claim 1, wherein the positioning is performed by optical microscopy, electroluminescence spectroscopy, cathodoluminescence spectroscopy, or scanning electron microscopy.
5. The method of claim 1, wherein the AlGaN-based device structure comprises n-AlGaN, a quantum well structure, p-AlGaN, and an electrode.
6. The method of claim 5, wherein the epitaxially grown AlGaN material wing region and mesa region include: epitaxially growing an n-AlGaN material on the AlN template and forming a mesa area, wherein the Al component of the AlGaN material of the mesa area is lower than that of other parts;
epitaxially growing an AlGaN quantum well structure on the n-AlGaN material to serve as an active region;
and depositing a p-AlGaN material on the quantum well active region.
7. The manufacturing method according to claim 6, wherein the manufacturing of the light detecting device and the light emitting device in the corresponding regions comprises:
preparing a light-emitting device on the mesa region, and applying forward bias during working to reduce the effective forbidden bandwidth of the quantum well during working of the light-emitting device; and preparing the optical detection device in the wing region, and applying reverse bias voltage during working so as to increase the effective forbidden bandwidth of the quantum well during working of the detection device.
8. The manufacturing method according to claim 6, wherein when the light detecting device and the light emitting device are manufactured in the corresponding areas, the p-type region electrode and the n-type region electrode suitable for the light emitting device and the light detecting device are respectively manufactured on the p-AlGaN material and the corresponding n-AlGaN material which are separated from each other by using electron beam evaporation, thermal evaporation or rapid annealing;
and the light-emitting device and the detecting device are spatially separated through photoetching and etching, and a part of the n-AlGaN surface is exposed to prepare an electrode.
9. An AlGaN-based homogeneous integrated optoelectronic chip obtained by the method according to any one of claims 1 to 8.
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