CN110993624A - Flexible display panel, preparation method thereof and flexible display device - Google Patents
Flexible display panel, preparation method thereof and flexible display device Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 85
- 239000002184 metal Substances 0.000 claims description 69
- 239000011229 interlayer Substances 0.000 claims description 47
- 238000002955 isolation Methods 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 7
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- 238000005452 bending Methods 0.000 abstract description 9
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
The embodiment of the invention provides a flexible display panel, a preparation method thereof and a flexible display device, and solves the technical problem that the display of the flexible display panel is poor after the flexible display panel is folded for multiple times in the prior art. According to the flexible display panel provided by the embodiment of the invention, the inorganic insulating layer is only arranged in the transistor structure and the capacitor structure in the flexible display panel, so that the area of the inorganic insulating layer in the flexible display panel is reduced, the probability that the inorganic insulating layer is cracked or broken due to bending stress after the flexible display panel is bent for multiple times is reduced, and the probability that the flexible display panel has poor display is reduced.
Description
Technical Field
The invention relates to the technical field of display, in particular to a flexible display panel, a preparation method thereof and a flexible display device.
Background
With the development of display technology, the application field of display devices is now very wide, and thus the requirements for various performances of panels are gradually increased. The flexible screen has characteristics such as can buckle, utilizes display device's flexibility, and people can buckle or fold display device to it is convenient to carry and use display device for people.
At present, the flexible display screen has become an important development direction of the display screen of the electronic device due to the advantages of being bendable, foldable and portable; however, although the foldable flexible display panel in the prior art can be folded, after the foldable flexible display panel is bent for multiple times, the display panel has a phenomenon of poor display, so that the display screen cannot normally display.
Disclosure of Invention
In view of this, embodiments of the present invention provide a flexible display panel, a manufacturing method thereof, and a flexible display device, which solve the technical problem in the prior art that a display of a flexible display panel is poor after the flexible display panel is folded for multiple times.
For the purpose of making the objects, technical means and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
According to an aspect of the present invention, an embodiment of the present invention provides a flexible display panel including: an array substrate; the transistor structure and the capacitor structure are arranged on one side of the array substrate; and
a planarization layer disposed on one side of the transistor structure and the capacitor structure.
In an embodiment of the present invention, the transistor structure includes: a channel layer disposed at one side of the array substrate; the first insulating layer is arranged on one side, away from the array substrate, of the channel layer; a gate layer disposed on a side of the first insulating layer away from the channel layer; a first interlayer dielectric isolation layer disposed on a side of the gate layer away from the channel layer; and a metal routing layer arranged on one side of the first interlayer dielectric isolation layer far away from the grid layer.
In an embodiment of the present invention, a projection of the first insulating layer on the array substrate coincides with a projection of the gate layer on the array substrate; the projection of the first interlayer medium isolation layer on the array substrate is coincident with the projection of the channel layer on the array substrate.
In an embodiment of the present invention, the capacitor structure includes: the second insulating layer is arranged on one side of the array substrate; the first metal layer is arranged on one side, far away from the array substrate, of the second insulating layer;
the third insulating layer is arranged on one side, far away from the second insulating layer, of the first metal layer; the second metal layer is arranged on one side, far away from the first metal layer, of the third insulating layer; and the second interlayer medium isolating layer is arranged on one side of the second metal layer, which is far away from the third insulating layer.
In an embodiment of the present invention, a projection of the second insulating layer on the array substrate coincides with a projection of the first metal layer on the array substrate; the projection of the third insulating layer on the array substrate is superposed with the projection of the first metal layer on the array substrate; and the projection of the second interlayer dielectric isolation layer on the array substrate is superposed with the projection of the second metal layer on the array substrate.
In an embodiment of the invention, the first metal layer is a first electrode plate layer of the capacitor structure; the second metal layer is a second electrode plate layer of the capacitor structure.
In an embodiment of the present invention, the flexible display panel further includes: the anode layer is arranged on one side, far away from the array substrate, of the planarization layer; a pixel defining layer disposed on a side of the anode layer remote from the planarization layer; and an isolation column layer disposed on a side of the pixel defining layer away from the anode layer.
As a second surface of the present invention, an embodiment of the present invention further provides a method for manufacturing a flexible display panel, including: providing or preparing an array substrate; forming a transistor structure and a capacitor structure on one side of the array substrate; and forming a planarization layer on one side of the transistor structure and the capacitor structure far away from the array substrate.
In an embodiment of the present invention, the transistor structure includes a channel layer, a first insulating layer, a gate layer, a first interlayer dielectric isolation layer, and a metal routing layer, which are sequentially stacked; the capacitor structure comprises a second insulating layer, a first metal layer, a third insulating layer, a second metal layer and a second interlayer dielectric isolation layer which are sequentially stacked; wherein a material of the first insulating layer is the same as a material of the second insulating layer; the material of the first interlayer dielectric isolation layer is the same as that of the second interlayer dielectric isolation layer; the forming of the transistor structure and the capacitor structure at one side of the array substrate includes: forming a channel layer on one side of the array substrate; forming an insulating layer on one side of the channel layer, which is far away from the array substrate;
forming a gate layer and a first metal layer on one side of the insulating layer, which is far away from the channel layer, and etching the insulating layer to form a first insulating layer and a second insulating layer; forming an inorganic layer on one side of the first metal layer far away from the insulating layer; forming a second metal layer on one side of the inorganic layer, which is far away from the first metal layer, and etching the inorganic layer to form a third insulating layer; forming an interlayer dielectric isolation layer on one side of the third insulation layer, which is far away from the second metal layer; etching the interlayer dielectric isolation layer to form a first interlayer dielectric isolation layer and a second interlayer dielectric isolation layer; forming a metal wiring layer on one side of the second interlayer dielectric isolation layer, which is far away from the array substrate; and forming a planarization layer on one side of the metal routing layer, which is far away from the second interlayer medium isolation layer.
As a third aspect of the present invention, an embodiment of the present invention provides a flexible display device, including the flexible display panel as described above.
The flexible display panel provided by the embodiment of the invention comprises an array substrate, a transistor structure and a capacitor structure which are arranged on one side of the array substrate, and a planarization layer which is arranged on one side, far away from the array substrate, of the capacitor structure and the transistor structure. The flexible display panel provided by the embodiment of the invention has the advantages that the area of the inorganic insulating layer in the flexible display panel is greatly reduced, so that the probability of cracks or fracture of the inorganic insulating layer due to bending stress after the flexible display panel is bent for multiple times is reduced, and the probability of poor display of the flexible display panel is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a flexible display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a flexible display panel according to another embodiment of the present invention;
fig. 3 is a schematic structural diagram of a flexible display panel according to another embodiment of the present invention;
fig. 4 is a schematic flow chart illustrating a method for manufacturing a flexible display panel according to an embodiment of the present invention;
fig. 5 is a schematic flow chart illustrating a manufacturing method of a flexible display panel according to another embodiment of the present invention.
Detailed Description
As described in the background art, in the prior art, a phenomenon of poor display is easily caused after the flexible display panel is bent for multiple times, and the inventor researches and finds that the reason for the problem is that an array module in the flexible display panel includes multiple inorganic insulating layers, and when the flexible display panel is repeatedly bent for multiple times, the inorganic insulating layers are easily cracked or broken due to bending stress, so that the flexible display panel is poor in display.
Based on the above, the invention provides a flexible display panel, wherein the area of the inorganic insulating layer in the flexible display panel is reduced by only arranging the inorganic insulating layer in the transistor structure and the capacitor structure in the flexible display panel, so that the probability of cracks or fractures of the inorganic insulating layer due to bending stress after the flexible display panel is bent for multiple times is reduced, and the probability of poor display of the flexible display panel is reduced.
Specifically, the present invention provides a flexible display panel, including: an array substrate; the transistor structure and the capacitor structure are arranged on one side of the array substrate; and a planarization layer disposed on one side of the transistor structure and the capacitor structure.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a flexible display panel according to an embodiment of the present invention, as shown in fig. 1, the flexible display panel includes an array substrate 1, a transistor structure 2, a capacitor structure 3, and a planarization layer 4; the transistor structure 2 and the capacitor structure 3 are respectively disposed on one side of the array substrate 1, and the planarization layer 4 is disposed on one side of the transistor structure 2 and the capacitor structure 3 away from the array substrate 1. The planarization layer 4 covers the transistor structure 2 and the capacitor structure 3 and fills the gap between the transistor structure 2 and the capacitor structure 3. In the flexible display panel provided in the embodiment of the present invention, except for the transistor structure and the capacitor structure, other planarization layers (organic layers) are provided in the array module in the entire flexible display panel, that is, only the inorganic insulating layers exist in the transistor structure and the capacitor structure, and compared with the inorganic insulating layers in the flexible display panel in the prior art, the flexible display panel provided in the embodiment of the present invention greatly reduces the area of the inorganic insulating layers in the flexible display panel, thereby reducing the probability that the inorganic insulating layers are cracked or fractured due to bending stress after the flexible display panel is bent for multiple times, and reducing the probability that the flexible display panel has poor display.
Fig. 2 is a schematic structural diagram of a flexible display panel according to another embodiment of the present invention, and as shown in fig. 2, the transistor structure 2 includes: a channel layer 21 disposed on one side of the array substrate 1; a first insulating layer 22 disposed on a side of the channel layer 21 away from the array substrate 1; a gate layer 23 provided on a side of the first insulating layer 22 away from the channel layer 21; a first interlayer dielectric isolation layer 24 disposed on a side of the gate layer 23 away from the channel layer 21; and a metal wiring layer 25 disposed on a side of the first interlayer dielectric isolation layer 24 remote from the gate layer 23. The capacitor structure 3 includes: a second insulating layer 31 disposed at one side of the array substrate 1; a first metal layer 32 disposed on a side of the second insulating layer 31 away from the array substrate 1; a third insulating layer 33 disposed on the side of the first metal layer 32 away from the second insulating layer 31; a second metal layer 34 provided on the third insulating layer 33 on the side away from the first metal layer 32; and a second interlayer dielectric spacer 35 disposed on a side of the second metal layer 34 remote from the third insulating layer 33.
In one embodiment of the present invention, in the transistor structure 2, a projection of the first insulating layer 22 on the array substrate 1 coincides with a projection of the gate layer 23 on the array substrate 1; the projection of the first interlayer dielectric isolation layer 24 on the array substrate 1 coincides with the projection of the channel layer 21 on the array substrate 1. In the transistor structure in the flexible display panel in the embodiment of the invention, the area of the inorganic insulating layer in the transistor structure is minimized, the probability that the inorganic insulating layer is cracked or broken due to bending stress after the flexible display panel is bent for multiple times is further reduced, and the probability that the flexible display panel has poor display is reduced.
In an embodiment of the present invention, in the capacitor structure 3, a projection of the second insulating layer 31 on the array substrate 1 coincides with a projection of the first metal layer 32 on the array substrate 1; the projection of the third insulating layer 33 on the array substrate 1 coincides with the projection of the first metal layer 32 on the array substrate 1; the projection of the second interlayer dielectric isolation layer 35 on the array substrate 1 coincides with the projection of the second metal layer 34 on the array substrate 1. In the capacitor structure 3 in the flexible display panel in the embodiment of the invention, the area of the inorganic insulating layer in the capacitor structure 3 is minimized, so that the probability of cracks or fractures of the inorganic insulating layer due to bending stress after the flexible display panel is bent for multiple times is further reduced, and the probability of poor display of the flexible display panel is reduced.
In an embodiment of the present invention, the first metal layer 32 is a first electrode plate layer of the capacitor structure 3; the second metal layer 34 is a second electrode plate layer of the capacitor structure 3.
Fig. 3 is a schematic structural diagram of a flexible display panel according to another embodiment of the present invention, and as shown in fig. 3, the flexible display panel further includes: an anode layer 5 arranged on one side of the planarization layer 4 far away from the array substrate 1; a pixel defining layer 6 disposed on a side of the anode layer 5 remote from the planarization layer 4; and a spacer column layer 7 disposed on a side of the pixel defining layer 6 remote from the anode layer.
Fig. 4 is a schematic flow chart of a method for manufacturing a flexible display panel according to an embodiment of the present invention, and as shown in fig. 4, the method for manufacturing a flexible display panel includes:
step S101: providing or preparing an array substrate;
step S102: forming a transistor structure and a capacitor structure on one side of the array substrate; and
step S103: and forming a planarization layer on the sides of the transistor structure and the capacitor structure far away from the array substrate.
According to the flexible display panel prepared by the preparation method of the flexible display panel provided by the embodiment of the invention, except for the transistor structure and the capacitor structure, other planarization layers are arranged in the array module in the whole flexible display panel, namely, only the inorganic insulating layers exist in the transistor structure and the capacitor structure, compared with the inorganic insulating layers in the flexible display panel in the prior art, the area of the inorganic insulating layers in the flexible display panel is greatly reduced by the flexible display panel provided by the embodiment of the invention, so that the probability that the inorganic insulating layers are cracked or fractured due to bending stress after the flexible display panel is bent for multiple times is reduced, and the probability that the flexible display panel has poor display is reduced.
In an embodiment of the present invention, a transistor structure includes a channel layer, a first insulating layer, a gate layer, a first interlayer dielectric isolation layer, and a metal routing layer, which are sequentially stacked; the capacitor structure comprises a second insulating layer, a first metal layer, a third insulating layer, a second metal layer and a second interlayer dielectric isolation layer which are sequentially stacked; wherein the material of the first insulating layer is the same as the material of the second insulating layer; the material of the first interlayer dielectric isolation layer is the same as that of the second interlayer dielectric isolation layer; as shown in fig. 5, the step S102 (forming the transistor structure and the capacitor structure on one side of the array substrate) specifically includes:
step S1021: forming a channel layer on one side of the array substrate;
step S1022: forming an insulating layer on one side of the channel layer, which is far away from the array substrate;
step S1023: forming a gate layer and a first metal layer on one side of the insulating layer, which is far away from the channel layer, and etching the insulating layer to form a first insulating layer and a second insulating layer;
when the projection of the first insulating layer on the array substrate coincides with the projection of the gate electrode layer on the array substrate, and the projection of the second insulating layer on the array substrate coincides with the projection of the first metal layer on the array substrate, the etching the insulating layer in step S1023 to form the first insulating layer and the second insulating layer may specifically include: etching off part of the insulating layer without being covered by the gate layer in the insulating layer through self-alignment of the gate layer to form a first insulating layer; and etching off part of the insulating layer without the coverage of the first metal layer in the insulating layer to form a second insulating layer through self-alignment of the first metal layer.
Step S1024: forming an inorganic layer on one side of the first metal layer, which is far away from the insulating layer;
step S1025: forming a second metal layer on one side of the inorganic layer, which is far away from the first metal layer, and etching the inorganic layer to form a third insulating layer;
when the projection of the third insulating layer on the array substrate coincides with the projection of the second metal layer on the array substrate, the etching the inorganic layer in step S1025 to form the third insulating layer specifically includes: and etching away part of the inorganic layer without the coverage of the second metal layer in the inorganic layer to form a third insulating layer through self-alignment of the second metal layer.
Step S1026: forming an interlayer dielectric isolation layer on one side of the third insulation layer, which is far away from the second metal layer;
step S1027: etching the interlayer dielectric isolation layer to form a first interlayer dielectric isolation layer and a second interlayer dielectric isolation layer;
step S1028: forming a metal wiring layer on one side of the second interlayer dielectric isolation layer away from the array substrate; and
step S1029: and forming a planarization layer on one side of the metal routing layer, which is far away from the second interlayer dielectric isolation layer.
In the embodiment of the invention, the material of the first insulating layer in the transistor structure is the same as that of the second insulating layer in the capacitor structure; the material of the first interlayer dielectric isolation layer in the transistor structure is the same as that of the second interlayer dielectric isolation layer in the capacitor structure, when the capacitor structure and the transistor structure are prepared on the array substrate, one insulating layer can be formed at one time, then the first insulating layer and the second insulating layer are prepared through etching, and the process complexity of preparing the transistor structure and the capacitor structure is reduced.
As a third aspect of the present invention, an embodiment of the present invention provides a flexible display device, including the flexible display panel as described above, in which, in addition to the transistor structure and the capacitor structure, other planarization layers (organic layers) are provided in an array module in the entire flexible display panel, that is, only inorganic insulating layers are present in the transistor structure and the capacitor structure, and compared with the inorganic insulating layers in the flexible display panel in the prior art, the area of the inorganic insulating layer in the flexible display panel is greatly reduced by the flexible display panel provided in the embodiment of the present invention, so that the probability of cracks or fractures of the inorganic insulating layer due to bending stress after the flexible display panel is bent for multiple times is reduced, and the probability of poor display of the flexible display panel is reduced.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, so that any modifications, equivalents and the like included in the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A flexible display panel, comprising:
an array substrate;
the transistor structure and the capacitor structure are arranged on one side of the array substrate; and
a planarization layer disposed on one side of the transistor structure and the capacitor structure.
2. The flexible display panel of claim 1, wherein the transistor structure comprises:
a channel layer disposed at one side of the array substrate;
the first insulating layer is arranged on one side, away from the array substrate, of the channel layer;
a gate layer disposed on a side of the first insulating layer away from the channel layer;
a first interlayer dielectric isolation layer disposed on a side of the gate layer away from the channel layer; and
and the metal routing layer is arranged on one side of the first interlayer dielectric isolation layer, which is far away from the grid layer.
3. The flexible display panel of claim 2, wherein a projection of the first insulating layer on the array substrate coincides with a projection of the gate layer on the array substrate; the projection of the first interlayer medium isolation layer on the array substrate is coincident with the projection of the channel layer on the array substrate.
4. The flexible display panel of claim 1, wherein the capacitive structure comprises:
the second insulating layer is arranged on one side of the array substrate;
the first metal layer is arranged on one side, far away from the array substrate, of the second insulating layer;
the third insulating layer is arranged on one side, far away from the second insulating layer, of the first metal layer;
the second metal layer is arranged on one side, far away from the first metal layer, of the third insulating layer;
and the second interlayer medium isolating layer is arranged on one side of the second metal layer, which is far away from the third insulating layer.
5. The flexible display panel of claim 4, wherein a projection of the second insulating layer on the array substrate coincides with a projection of the first metal layer on the array substrate; the projection of the third insulating layer on the array substrate is superposed with the projection of the first metal layer on the array substrate; and the projection of the second interlayer dielectric isolation layer on the array substrate is superposed with the projection of the second metal layer on the array substrate.
6. The flexible display panel of claim 4, wherein the first metal layer is a first electrode plate layer of the capacitive structure; the second metal layer is a second electrode plate layer of the capacitor structure.
7. The flexible display panel of claim 1, further comprising:
the anode layer is arranged on one side, far away from the array substrate, of the planarization layer;
a pixel defining layer disposed on a side of the anode layer remote from the planarization layer; and
and an isolation column layer disposed on a side of the pixel defining layer remote from the anode layer.
8. A method for manufacturing a flexible display panel, comprising:
providing or preparing an array substrate;
forming a transistor structure and a capacitor structure on one side of the array substrate; and
and forming a planarization layer on one side of the transistor structure and the capacitor structure far away from the array substrate.
9. The method according to claim 7, wherein the transistor structure comprises a channel layer, a first insulating layer, a gate layer, a first interlayer dielectric isolation layer, and a metal wiring layer, which are sequentially stacked; the capacitor structure comprises a second insulating layer, a first metal layer, a third insulating layer, a second metal layer and a second interlayer dielectric isolation layer which are sequentially stacked; wherein a material of the first insulating layer is the same as a material of the second insulating layer; the material of the first interlayer dielectric isolation layer is the same as that of the second interlayer dielectric isolation layer;
the forming of the transistor structure and the capacitor structure at one side of the array substrate includes:
forming a channel layer on one side of the array substrate;
forming an insulating layer on one side of the channel layer, which is far away from the array substrate;
forming a gate layer and a first metal layer on one side of the insulating layer, which is far away from the channel layer, and etching the insulating layer to form a first insulating layer and a second insulating layer;
forming an inorganic layer on one side of the first metal layer far away from the insulating layer;
forming a second metal layer on one side of the inorganic layer, which is far away from the first metal layer, and etching the inorganic layer to form a third insulating layer;
forming an interlayer dielectric isolation layer on one side of the third insulation layer, which is far away from the second metal layer;
etching the interlayer dielectric isolation layer to form a first interlayer dielectric isolation layer and a second interlayer dielectric isolation layer;
forming a metal wiring layer on one side of the second interlayer dielectric isolation layer, which is far away from the array substrate; and
and forming a planarization layer on one side of the metal routing layer, which is far away from the second interlayer medium isolation layer.
10. A flexible display device comprising the flexible display panel according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911294743.3A CN110993624A (en) | 2019-12-16 | 2019-12-16 | Flexible display panel, preparation method thereof and flexible display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911294743.3A CN110993624A (en) | 2019-12-16 | 2019-12-16 | Flexible display panel, preparation method thereof and flexible display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110993624A true CN110993624A (en) | 2020-04-10 |
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| CN201911294743.3A Pending CN110993624A (en) | 2019-12-16 | 2019-12-16 | Flexible display panel, preparation method thereof and flexible display device |
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Citations (5)
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| CN107425044A (en) * | 2017-08-04 | 2017-12-01 | 京东方科技集团股份有限公司 | A kind of flexible display panels, its preparation method and display device |
| CN109300948A (en) * | 2018-09-28 | 2019-02-01 | 昆山国显光电有限公司 | A kind of display device and its flexible OLED panel |
| CN109950252A (en) * | 2019-02-25 | 2019-06-28 | 昆山国显光电有限公司 | Production method, array substrate, display screen and the display equipment of array substrate |
| CN109979963A (en) * | 2017-12-27 | 2019-07-05 | 乐金显示有限公司 | Display device and electroluminescent display |
| CN110571241A (en) * | 2019-08-09 | 2019-12-13 | 武汉华星光电半导体显示技术有限公司 | array substrate and manufacturing method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107425044A (en) * | 2017-08-04 | 2017-12-01 | 京东方科技集团股份有限公司 | A kind of flexible display panels, its preparation method and display device |
| CN109979963A (en) * | 2017-12-27 | 2019-07-05 | 乐金显示有限公司 | Display device and electroluminescent display |
| CN109300948A (en) * | 2018-09-28 | 2019-02-01 | 昆山国显光电有限公司 | A kind of display device and its flexible OLED panel |
| CN109950252A (en) * | 2019-02-25 | 2019-06-28 | 昆山国显光电有限公司 | Production method, array substrate, display screen and the display equipment of array substrate |
| CN110571241A (en) * | 2019-08-09 | 2019-12-13 | 武汉华星光电半导体显示技术有限公司 | array substrate and manufacturing method thereof |
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Application publication date: 20200410 |