CN110989296A - Quantum dot photoresist and preparation method thereof, display substrate and display device - Google Patents
Quantum dot photoresist and preparation method thereof, display substrate and display device Download PDFInfo
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- CN110989296A CN110989296A CN201911316397.4A CN201911316397A CN110989296A CN 110989296 A CN110989296 A CN 110989296A CN 201911316397 A CN201911316397 A CN 201911316397A CN 110989296 A CN110989296 A CN 110989296A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
Abstract
The invention provides a quantum dot photoresist, a preparation method thereof, a display substrate and a display device, and belongs to the technical field of display. Wherein, quantum dot photoresist includes: 3-20 wt% of quantum dots; 0.5-10 wt% of scattering particles; 10-50 wt% of a photopolymerizable monomer compound; 0.05-2 wt% of a photopolymerization initiator; 10-50 wt% of an alkali soluble resin; 1-30 wt% of a solvent. The technical scheme of the invention can improve the luminous uniformity, luminous stability and luminous efficiency of the quantum dot color film.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot photoresist, a preparation method thereof, a display substrate and a display device.
Background
With the development of display technology, the application of display devices is becoming more and more widespread. The display substrate is an important component of the display device, and has a great influence on the display effect of the display device. The display substrate may be, for example, a base substrate including, for example, a color filter layer and a quantum dot layer formed on the color filter layer. At present, the LCD (liquid crystal display) combines the quantum dot technology to increase the color gamut, and there are roughly two ways: the first mode is that QDEF (quantum optical film) is attached above the light guide film of the whole liquid crystal panel and below the color filter; the second way is to combine quantum dots with a backlight system, for example, integrated in an LED (light emitting diode) package, or to add a stripe structure containing quantum dots between the side backlight and the liquid crystal panel. However, the first method has the problem that the quantum dot film increases the overall thickness of the display device and is expensive, and the second method has the problem that the temperature of the backlight module is too high to cause the quantum dot to fail.
The quantum dot color filter technology is expected to solve the two problems. The quantum dot color filter technology is a color conversion film prepared by dispersing quantum dots in photoresist instead of traditional pigments. Different from the effect of shielding other light colors of the traditional color filter, the quantum dot color filter is in an excitation absorption mode, combines the light-emitting characteristics of wide excitation, narrow emission and high color purity of quantum dots, replaces the traditional color filter of an LCD panel with the quantum dot color filter, and can effectively improve the brightness and widen the color gamut range. However, the quantum dots have a size of nanometer, and when a blue light backlight passes through a color filter including the quantum dots, the light path length is very short compared to that of a color filter prepared from a pigment, so that a large amount of blue light is transmitted through the quantum dot color filter and cannot be effectively utilized, thereby causing a decrease in efficiency of excited red and green light and a decrease in brightness.
Disclosure of Invention
The invention aims to provide a quantum dot photoresist, a preparation method thereof, a display substrate and a display device, and can improve the luminescence uniformity, the luminescence stability and the luminescence efficiency of a quantum dot color film.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, a quantum dot photoresist is provided, comprising:
3-20 wt% of quantum dots;
0.5-10 wt% of scattering particles;
10-50 wt% of a photopolymerizable monomer compound;
0.05-2 wt% of a photopolymerization initiator;
10-50 wt% of an alkali soluble resin;
1-30 wt% of a solvent.
Optionally, the method further comprises:
0.01-0.1 wt% of leveling agent.
Optionally, the quantum dots comprise red and green quantum dots.
Optionally, the scattering particles employ any one of:
TiO2；
TiO2with Al2O3The composition of (1), TiO in the composition2Is more than 90 percent;
TiO2with SiO2The composition of (1), TiO in the composition2Is greater than 90 percent.
Optionally, the surface of the scattering particles is treated with an organic modification.
Alternatively, TiO2The average diameter of the particles is 50nm-550 nm.
Optionally, the scattering particles comprise a first TiO2Particles and second TiO2Particles of the first TiO2The diameter of the particles is 50-200nm, and the second TiO2The diameter of the particle is 200-550 nm; or
The scattering particles include only the second TiO2Particles.
Optionally, the scattering particles comprise a first TiO2Particles and second TiO2When in particle, the first TiO2The mass ratio of the particles is 1-10 wt%.
Alternatively, the mass ratio of the photopolymerizable monomer compound to the alkali-soluble resin is 0.5 to 2.
The embodiment of the invention also provides a preparation method of the quantum dot photoresist, which comprises the following steps:
mixing and dispersing a photopolymerizable monomer compound, a photopolymerization initiator, an alkali-soluble resin and a solvent to obtain a first dispersion liquid;
mixing and dispersing the scattering particles and the alkali-soluble resin to obtain a second dispersion liquid;
mixing and dispersing the quantum dots and the solvent to obtain a third dispersion liquid;
mixing and stirring the first dispersion liquid, the second dispersion liquid and the third dispersion liquid to obtain the quantum dot photoresist containing scattering particles, wherein the quantum dot photoresist comprises: 3-20 wt% of quantum dots; 0.5-10 wt% of scattering particles; 10-50 wt% of a photopolymerizable monomer compound; 0.05-2 wt% of a photopolymerization initiator; 10-50 wt% of an alkali soluble resin; 1-30 wt% of a solvent.
An embodiment of the present invention further provides a display substrate, including:
a substrate base plate;
and the quantum dot color film is arranged on the substrate and adopts the quantum dot photoresist.
The embodiment of the invention also provides a display device which comprises the display substrate.
The embodiment of the invention has the following beneficial effects:
in the scheme, the scattering particles are added into the quantum dot photoresist in a certain proportion, and the scattering particles can improve the optical path of blue light backlight in the color filter, so that the utilization rate of the quantum dot color filter to the blue light backlight can be greatly improved, the absorption rate of red light quantum dots and green light quantum dots to the blue light is improved, and the light-emitting uniformity, the light-emitting stability and the light-emitting efficiency of the quantum dot color film are further improved.
Drawings
Fig. 1 is a schematic flow chart of a method for preparing a quantum dot photoresist according to an embodiment of the invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
The quantum dot color filter technology is a color conversion film prepared by dispersing quantum dots in photoresist instead of traditional pigments. Different from the effect of shielding other light colors of the traditional color filter, the quantum dot color filter is in an excitation absorption mode, combines the light-emitting characteristics of wide excitation, narrow emission and high color purity of quantum dots, replaces the traditional color filter of an LCD panel with the quantum dot color filter, and can effectively improve the brightness and widen the color gamut range. However, the quantum dots have a size of nanometer, and when a blue light backlight passes through a color filter including the quantum dots, the light path length is very short compared to that of a color filter prepared from a pigment, so that a large amount of blue light is transmitted through the quantum dot color filter and cannot be effectively utilized, thereby causing a decrease in efficiency of excited red and green light and a decrease in brightness.
Aiming at the problem, the performance of the quantum dot color filter can be improved by increasing the thickness of the color filter and increasing the concentration of the quantum dots in the photoresist, but when the thickness of the color filter is increased or the concentration of the quantum dots in the photoresist is increased, the luminous uniformity of the quantum dot color filter is poor.
The embodiment of the invention provides a quantum dot photoresist, a preparation method thereof, a display substrate and a display device, which can improve the luminescence uniformity, the luminescence stability and the luminescence efficiency of a quantum dot color film.
The embodiment of the invention provides a quantum dot photoresist, which comprises:
3-20 wt% of quantum dots;
0.5-10 wt% of scattering particles;
10-50 wt% of a photopolymerizable monomer compound;
0.05-2 wt% of a photopolymerization initiator;
10-50 wt% of an alkali soluble resin;
1-30 wt% of a solvent.
In the embodiment, a certain proportion of scattering particles are added in the quantum dot photoresist, and the scattering particles can improve the optical path of blue light backlight in the color filter, so that the utilization rate of the quantum dot color filter to the blue light backlight can be greatly improved, the absorption rate of red light quantum dots and green light quantum dots to the blue light is improved, and the light emitting uniformity, the light emitting stability and the light emitting efficiency of the quantum dot color film are further improved.
When the proportion is adopted, the absorption rate of the red quantum dot color filter to the blue light can be improved to more than 95%, and the absorption rate of the green quantum dot color filter to the blue light can be improved to more than 85%.
Optionally, the quantum dot photoresist further comprises 0.01-0.1 wt% of a leveling agent. The leveling agent is a coating additive, can promote the coating to form a flat, smooth and uniform coating film in the drying film-forming process, can effectively reduce the surface tension of the coating liquid, and improves the leveling property and uniformity of the coating liquid; the embodiment can use a fluorine leveling agent, has the characteristics of good substrate wettability and strong anti-cratering capacity, and can properly adjust the proportion of the leveling agent so as to improve the efficiency of the quantum dot photoresist.
Table 1 is a schematic diagram of the relationship between the amount of the leveling agent and the conversion efficiency of the quantum dots and the surface roughness of the quantum dot photoresist, and experiments show that when the amount of the leveling agent is 0.5 equivalent, the conversion efficiency of the quantum dots can reach the highest, and the surface roughness of the quantum dot photoresist can reach the highest
The flatness requirement can be satisfied.
TABLE 1
Specifically, the quantum dots in the quantum dot photoresist comprise red light quantum dots and green light quantum dots, so that the red light quantum dots can emit red light under the excitation of blue light, the green light quantum dots can emit green light under the excitation of blue light, and the red light, the green light and the blue light can be mixed into white light.
The median size of the particle size of the scattering particles has direct influence on the quantum dot efficiency, and because the diameter magnitude (5-30 nm) of the quantum dots and the diameter magnitude (hundred nm level) of the scattering particles are different, and the wavelength of incident excitation light is in the range of 380-480 nm, the effects of Rayleigh scattering and Mie scattering exist simultaneously when blue light irradiates the quantum dot color filter; therefore, the adjustment of the diameter of the scattering particles has obvious influence on the luminous efficiency, and the scattering particles with different particle sizes can be mixed and simultaneously act on the scattering of light; meanwhile, the surface treatment of the scattering particles also has certain influence on the conversion efficiency of the quantum dots, and the scattering particles after the surface treatment have better dispersion effect in colloid and lower agglomeration and sedimentation probability with the quantum dots or other scattering particles, so that the surfaces of the scattering particles are preferably subjected to organic modification treatment.
Optionally, the scattering particles employ any one of:
TiO2；
TiO2with Al2O3The composition of (1), TiO in the composition2Is more than 90 percent;
TiO2with SiO2The composition of (1), TiO in the composition2Is greater than 90 percent.
The influence of different kinds of scattering particles on the blue light absorption rate and the quantum dot conversion efficiency of the quantum dot photoresist is shown in table 2.
TABLE 2
The effect of the ratio of different types of scattering particles on the quantum dot conversion efficiency is shown in table 3.
TABLE 3
It can be seen that different kinds of scattering particles can affect the blue light absorption rate and quantum dot conversion efficiency of the quantum dot photoresist. In addition, the ratio of different types of scattering particles also affects the quantum dot conversion efficiency. Wherein the scattering particles of model G60 have a particle size of 60nm and are not subjected to surface treatment; the particle size of the scattering particles of model G150 is 150nm, and the scattering particles are not subjected to surface treatment; the particle size of the model 5508 scattering particles is 450nm, and the surface treatment is not carried out; the particle size of the scattering particles of the model R706 is 350nm, and surface treatment is carried out; the particle size of the scattering particles of the model R900 is 410nm, and the scattering particles are not subjected to surface treatment; the particle size of the scattering particles of the model R931 is 550nm, and the scattering particles are not subjected to surface treatment; the scattering particles of type R960 had a particle size of 500nm and were not surface treated.
In one embodiment, the TiO is2The particles may have an average diameter of 50nm to 550 nm.
In another embodiment, the scattering particles comprise first TiO2Particles and second TiO2Particles of the first kindTiO 22The diameter of the particles is 50-200nm, and the second TiO2The diameter of the particle is 200-550 nm; or
The scattering particles include only the second TiO2Particles.
Preferably, the scattering particles comprise first TiO2Particles and second TiO2When in particle, the first TiO2The mass ratio of the particles is 1-10 wt%, so that the absorption rate of red light quantum dots and green light quantum dots to blue light can be improved, and the luminous uniformity, luminous stability and luminous efficiency of the quantum dot color film are improved.
Preferably, the mass ratio of the photopolymerizable monomer compound to the alkali-soluble resin is 0.5 to 2, which may ensure stability of the quantum dots and scattering particles in the quantum dot photoresist.
The embodiment of the invention also provides a preparation method of the quantum dot photoresist, which comprises the following steps:
mixing and dispersing a photopolymerizable monomer compound, a photopolymerization initiator, an alkali-soluble resin and a solvent to obtain a first dispersion liquid;
mixing and dispersing the scattering particles and the alkali-soluble resin to obtain a second dispersion liquid;
mixing and dispersing the quantum dots and the solvent to obtain a third dispersion liquid;
mixing and stirring the first dispersion liquid, the second dispersion liquid and the third dispersion liquid to obtain the quantum dot photoresist containing scattering particles, wherein the quantum dot photoresist comprises: 3-20 wt% of quantum dots; 0.5-10 wt% of scattering particles; 10-50 wt% of a photopolymerizable monomer compound; 0.05-2 wt% of a photopolymerization initiator; 10-50 wt% of an alkali soluble resin; 1-30 wt% of a solvent.
In the embodiment, a certain proportion of scattering particles are added in the quantum dot photoresist, and the scattering particles can improve the optical path of blue light backlight in the color filter, so that the utilization rate of the quantum dot color filter to the blue light backlight can be greatly improved, the absorption rate of red light quantum dots and green light quantum dots to the blue light is improved, and the light emitting uniformity, the light emitting stability and the light emitting efficiency of the quantum dot color film are further improved.
When the proportion is adopted, the absorption rate of the red quantum dot color filter to the blue light can be improved to more than 95%, and the absorption rate of the green quantum dot color filter to the blue light can be improved to more than 85%. In addition, the quantum dot photoresist prepared by the process can ensure the stability of quantum dots and scattering particles in the whole dispersion system, and lays a foundation for further obtaining the quantum dot color filter with high quantum yield, and by adopting the technical scheme of the embodiment, the quantum dot conversion efficiency of the red quantum dot color filter can reach more than 30%, and the quantum dot conversion efficiency of the green quantum dot color filter can reach more than 25%.
Optionally, the quantum dot photoresist further comprises 0.01-0.1 wt% of a leveling agent. The leveling agent is a coating additive, can promote the coating to form a flat, smooth and uniform coating film in the drying film-forming process, can effectively reduce the surface tension of the coating liquid, and improves the leveling property and uniformity of the coating liquid; the embodiment can use a fluorine leveling agent, has the characteristics of good substrate wettability and strong anti-cratering capacity, and can properly adjust the proportion of the leveling agent so as to improve the efficiency of the quantum dot photoresist.
Specifically, the quantum dots in the quantum dot photoresist comprise red light quantum dots and green light quantum dots, so that the red light quantum dots can emit red light under the excitation of blue light, the green light quantum dots can emit green light under the excitation of blue light, and the red light, the green light and the blue light can be mixed into white light.
The median size of the particle size of the scattering particles has direct influence on the quantum dot efficiency, and because the diameter magnitude (5-30 nm) of the quantum dots and the diameter magnitude (hundred nm level) of the scattering particles are different, and the wavelength of incident excitation light is in the range of 380-480 nm, the effects of Rayleigh scattering and Mie scattering exist simultaneously when blue light irradiates the quantum dot color filter; therefore, the adjustment of the diameter of the scattering particles has obvious influence on the luminous efficiency, and the scattering particles with different particle sizes can be mixed and simultaneously act on the scattering of light; meanwhile, the surface treatment of the scattering particles also has certain influence on the conversion efficiency of the quantum dots, and the scattering particles after the surface treatment have better dispersion effect in colloid and lower agglomeration and sedimentation probability with the quantum dots or other scattering particles, so that the surfaces of the scattering particles are preferably subjected to organic modification treatment.
Optionally, the scattering particles employ any one of:
TiO2；
TiO2with Al2O3The composition of (1), TiO in the composition2Is more than 90 percent;
TiO2with SiO2The composition of (1), TiO in the composition2Is greater than 90 percent.
In one embodiment, the TiO is2The particles may have an average diameter of 50nm to 550 nm.
In another embodiment, the scattering particles comprise first TiO2Particles and second TiO2Particles of the first TiO2The diameter of the particles is 50-200nm, and the second TiO2The diameter of the particle is 200-550 nm; or
The scattering particles include only the second TiO2Particles.
Preferably, the scattering particles comprise first TiO2Particles and second TiO2When in particle, the first TiO2The mass ratio of the particles is 1-10 wt%, so that the absorption rate of red light quantum dots and green light quantum dots to blue light can be improved, and the luminous uniformity, luminous stability and luminous efficiency of the quantum dot color film are improved.
Preferably, the mass ratio of the photopolymerizable monomer compound to the alkali-soluble resin is 0.5 to 2, which may ensure stability of the quantum dots and scattering particles in the quantum dot photoresist.
An embodiment of the present invention further provides a display substrate, including:
a substrate base plate;
and the quantum dot color film is arranged on the substrate and adopts the quantum dot photoresist.
The embodiment of the invention also provides a display device which comprises the display substrate. The display device may be: the display device comprises a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and any other product or component with a display function, wherein the display device further comprises a flexible circuit board, a printed circuit board and a back plate.
In the embodiments of the methods of the present invention, the sequence numbers of the steps are not used to limit the sequence of the steps, and for those skilled in the art, the sequence of the steps is not changed without creative efforts.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (12)
1. A quantum dot photoresist, comprising:
3-20 wt% of quantum dots;
0.5-10 wt% of scattering particles;
10-50 wt% of a photopolymerizable monomer compound;
0.05-2 wt% of a photopolymerization initiator;
10-50 wt% of an alkali soluble resin;
1-30 wt% of a solvent.
2. The quantum dot photoresist of claim 1, further comprising:
0.01-0.1 wt% of leveling agent.
3. The quantum dot photoresist of claim 1, wherein the quantum dots comprise red and green quantum dots.
4. The quantum dot photoresist of claim 1, wherein the scattering particles are any one of:
TiO2；
TiO2with Al2O3The composition of (1), TiO in the composition2Is more than 90 percent;
TiO2with SiO2The composition of (1), TiO in the composition2Is greater than 90 percent.
5. The quantum dot photoresist of claim 1 or 4, wherein the surface of the scattering particles is subjected to organic modification treatment.
6. The quantum dot photoresist of claim 4, wherein TiO2The average diameter of the particles is 50nm-550 nm.
7. The quantum dot photoresist of claim 6,
the scattering particles comprise first TiO2Particles and second TiO2Particles of the first TiO2The diameter of the particles is 50-200nm, and the second TiO2The diameter of the particle is 200-550 nm; or
The scattering particles include only the second TiO2Particles.
8. The quantum dot photoresist of claim 7, wherein the scattering particles comprise first TiO2Particles and second TiO2When in particle, the first TiO2The mass ratio of the particles is 1-10 wt%.
9. The quantum dot photoresist of claim 1, wherein the mass ratio of the photopolymerizable monomer compound to the alkali-soluble resin is 0.5 to 2.
10. A preparation method of quantum dot photoresist is characterized by comprising the following steps:
mixing and dispersing a photopolymerizable monomer compound, a photopolymerization initiator, an alkali-soluble resin and a solvent to obtain a first dispersion liquid;
mixing and dispersing the scattering particles and the alkali-soluble resin to obtain a second dispersion liquid;
mixing and dispersing the quantum dots and the solvent to obtain a third dispersion liquid;
mixing and stirring the first dispersion liquid, the second dispersion liquid and the third dispersion liquid to obtain the quantum dot photoresist containing scattering particles, wherein the quantum dot photoresist comprises: 3-20 wt% of quantum dots; 0.5-10 wt% of scattering particles; 10-50 wt% of a photopolymerizable monomer compound; 0.05-2 wt% of a photopolymerization initiator; 10-50 wt% of an alkali soluble resin; 1-30 wt% of a solvent.
11. A display substrate, comprising:
a substrate base plate;
a quantum dot color film disposed on the substrate, wherein the quantum dot color film is made of the quantum dot photoresist according to any one of claims 1 to 9.
12. A display device comprising the display substrate according to claim 11.
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| CN111584722B (en) * | 2020-05-11 | 2021-11-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method for manufacturing the same |
| US11522148B2 (en) | 2020-05-11 | 2022-12-06 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel having quantum dot light scattering particle composite and manufacturing method thereof |
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