CN110988513B - Micro-discharge test method and system for loading electrons through UV light source - Google Patents

Micro-discharge test method and system for loading electrons through UV light source Download PDF

Info

Publication number
CN110988513B
CN110988513B CN201911043332.7A CN201911043332A CN110988513B CN 110988513 B CN110988513 B CN 110988513B CN 201911043332 A CN201911043332 A CN 201911043332A CN 110988513 B CN110988513 B CN 110988513B
Authority
CN
China
Prior art keywords
light source
electrons
optical fiber
test
test piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911043332.7A
Other languages
Chinese (zh)
Other versions
CN110988513A (en
Inventor
李砚平
胡少光
田源
彭璐
杨晓敏
郭鲁川
王海林
双龙龙
周少航
王保新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Institute of Space Radio Technology
Original Assignee
Xian Institute of Space Radio Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Institute of Space Radio Technology filed Critical Xian Institute of Space Radio Technology
Priority to CN201911043332.7A priority Critical patent/CN110988513B/en
Publication of CN110988513A publication Critical patent/CN110988513A/en
Application granted granted Critical
Publication of CN110988513B publication Critical patent/CN110988513B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/001Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1218Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing using optical methods; using charged particle, e.g. electron, beams or X-rays

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

The invention provides a micro-discharge test method for loading electrons through a UV light source, which comprises the following steps of (1) simultaneously placing the UV light source and a test piece in vacuum equipment to generate a large number of free electrons, and adjusting the aperture and the voltage of the UV light source to enable the energy of UV laser to be more than 40 mu W; (2) Obtaining the quantity of electrons generated by the optical fiber acting on the surface of the test piece through calculation or measurement, wherein if the quantity of the electrons is more than 100 in 100 mu s, the free electron condition generated by micro-discharge meets the requirement; (3) Turning off the UV light source, starting the vacuum equipment, and enabling the UV light source to be in a vacuum environment; (4) And starting a UV light source power supply, loading a power signal to the test piece, adjusting the zero setting signal to be less than-60 dBm, and if the zero setting signal is always less than-60 dBm, ending the test and closing the UV light source power supply. The invention needs to turn off the power supply of the light source before and after the test, and compared with the radioactive source, the invention reduces the harm to the human body and has safe operation.

Description

Micro-discharge test method and system for loading electrons through UV light source
Technical Field
The invention belongs to the field of micro-discharge, and particularly relates to a micro-discharge test method and system for loading electrons through a UV light source.
Background
The microdischarge effect is a resonant vacuum discharge phenomenon that occurs between two metal surfaces or on a single dielectric surface. It is excited by a radio frequency electric field, typically occurring in a microwave system under vacuum conditions. When micro-discharge effect occurs in the space equipment, the system equipment is generally damaged, and the system cannot work normally. With the ever increasing power requirements of space payloads, microdischarges have become an important factor in determining the proper operation of satellites. Therefore, an effective ground microdischarge detection test work must be established.
In a space environment, a large number of particles (including electrons) are present due to magnetic circles, solar flares, cosmic ray particle radiation, and the like, and penetrate through the inner wall of a microwave component, forming seed electrons capable of inducing micro-discharge inside the component. In order to effectively evaluate the micro-discharge risk of a microwave component on the ground, seed electrons must be generated inside the microwave component in a micro-discharge test. The micro-discharge design and test standard of the european space clearly stipulates that enough seed electrons (equivalent electron discharge) must be loaded in the micro-discharge test, and the effectiveness of the seed electron loading is verified.
In a vacuum micro-discharge test on the ground, if seed electrons are loaded unreasonably, micro-discharge can not be excited even if the condition of micro-discharge is met, so that a test threshold is higher than a real threshold, and a potential discharge risk exists in a product. Therefore, reasonable loading of seed electrons is crucial to the validity of the microdischarge test.
The following methods are generally used for detecting the generation of free electrons in ground microdischarge tests: (1) radioactive source:
such as strontium Sr90 source, cesium Cs137, etc.; (2) cold cathode electron emission source: such as tungsten filament tip field emission sources; (3) ultraviolet light source: UV light irradiates the metal to generate free electrons through the photoelectric effect.
Although the advantages of the generation mode of the radioactive source electron source are obvious, the method has high cost, complex maintenance, radiation property, harm to human bodies, half-life period, limited service life and inconvenient ex-situ external field test.
The european ESA high power research center developed a means to use a UV light source as an excitation electron source. However, the method for microdischarge testing only mentions the implantation method, but does not take into account the influence on the electromagnetic field of the device.
Disclosure of Invention
The invention solves the technical problems that: aiming at the defects of the prior art, sufficient electrons are applied in the discharge through a side method and a reflection method to excite the discharge and eliminate the influence of the optical fiber on the electromagnetic field of the device.
The technical solution of the invention is as follows:
a micro-discharge test method for loading electrons through a UV light source comprises the following specific steps:
(1) Placing the UV light source and the test piece in vacuum equipment at the same time, and aligning an optical fiber in the UV light source to an area within 1cm around an air vent on the test piece when using a side method; when the reflection method is used, a reflecting plate which is made of the same material and coated with the same material as the test piece is placed at a position which is less than 5cm away from the exhaust hole, the optical fiber is aligned to the reflecting plate, a large amount of free electrons are generated by the two methods, and the aperture and the voltage of the UV light source are adjusted, so that the energy of the UV laser is more than 40 muW;
(2) Obtaining the number of electrons generated by the optical fiber acting on the surface of the test piece through calculation or measurement, and if the number of the electrons is more than 100 in 100 mu s, enabling the free electron condition generated by micro-discharge to meet the requirement, and entering the step (3);
(3) Turning off the UV light source, starting the vacuum equipment, and enabling the UV light source to be in a vacuum environment which is better than 6.65 x10 - 3 Pa, after keeping a vacuum environment for a certain time, preparing to carry out a micro-discharge test;
(4) And starting a UV light source power supply, keeping for half an hour, starting micro-discharge test equipment and completing preheating, loading a power signal on a test piece, adjusting a zero setting signal to be less than-60 dBm, recording test data according to a certain time interval in the test process, observing the zero setting signal and judging whether an abnormal phenomenon occurs, and if the zero setting signal is always less than-60 dBm, ending the test and closing the UV light source power supply.
Further, in the step (4), if the zeroing signal is not always smaller than-60 dBm, the zeroing signal is abnormal, and the power data during discharging and the image data of the zeroing signal are retained.
Further, in the step (4), if the zero setting signal changes to be more than-60 dBm and can be manually preset to be less than-60 dBm, the abnormal condition is recorded, and the test is continued.
Further, in step (4), if the zero-setting signal changes to-60 dBm or more and cannot be artificially adjusted to-60 dBm or less, the test should be stopped immediately.
Further, the method for calculating the number of electrons generated by the optical fiber acting on the surface of the test piece in the step (2) comprises the following steps: by passing
Figure BDA0002253445660000031
Determining the charge E of an electron, i.e. the photon energy E p In which E e Is the energy of the excited free electrons; psi is the work function of the substance, v is the frequency of the incident light, and h is the Planckian constant;
according to
Figure BDA0002253445660000032
Determining the number of photons generated per second n, where E p Is the photon energy, P is the corresponding light source power, and s is time.
Further, the method for measuring the quantity of electrons generated by the optical fiber acting on the surface of the test piece in the step (2) comprises the following steps: comprises a power supply, a lamp box, optical fibers, two copper plates with support tables and an ammeter;
two copper plates are arranged in vacuum equipment and are oppositely arranged, one copper plate is provided with a hole for passing an optical fiber,
the power supply supplies power for the lamp box, one end of the optical fiber is connected with the lamp box, the other end of the optical fiber penetrates through the small hole of one of the copper plates, the light beam irradiates on the other copper plate opposite to the light beam, reverse voltage is applied to two sides of the copper plate, photoelectrons generated by the light source irradiating on the other copper plate form reverse current under the action of the reverse voltage, the magnitude of the reverse current I can be tested through an ammeter, the quantity of the photoelectrons generated in the test can be calculated according to I = nesv, wherein e is the electric quantity of one electron, s is the area of the copper plate, v is the charge speed, and n is the number of the photoelectrons.
A system for loading electrons through a UV light source comprises a power supply, a lamp box and optical fibers, wherein the power supply supplies power to the lamp box, one end of each optical fiber is connected with the lamp box, and when a side approach method is used, the other end of each optical fiber is aligned to an area within 1cm of the periphery of an air vent in a test piece; when the reflection method is used, a reflecting plate which is made of the same material and coated with the same material as the test piece is placed at a position which is less than 5cm away from the exhaust hole, the other end of the optical fiber is aligned to the reflecting plate, a large number of electrons are generated by the two methods, the aperture and the voltage of the UV light source are adjusted, the energy of the UV laser is enabled to be larger than 40 muW, the number of the electrons generated by the optical fiber acting on the surface of the test piece is obtained through calculation or measurement, and if the number of the electrons is larger than 100 within 100 mus, the free electron condition generated by micro-discharge meets the requirement.
Further, the wavelength of the UV laser is centered at 254nm, and the diameter of the UV optical fiber is 0.5mm-3mm.
Compared with the prior art, the invention has the advantages that:
(1) The traditional method generates electrons by directly inserting optical fibers into the exhaust holes, the invention utilizes a side method and a reflection method, changes the installation and placement positions of the optical fibers, generates electrons with the same effect, tests signal frequency spectrums by observing the side method and the reflection method, has no interference on test signals, and changes the defects of the traditional embedding method;
(2) Compared with the traditional method, the reflection method ensures that a large amount of electrons are generated in a local range, and the electrons enter the test piece through the vent hole, so that the possibility that a plurality of test pieces simultaneously carry out micro-discharge tests can be realized, and the test cost is reduced;
(3) The invention ensures that the number of electrons required in the test fully meets the test requirement through a calculation method and a test method;
(4) The invention needs to turn off the power supply of the light source before and after the test, and compared with the radioactive source, the invention reduces the harm to the human body and has safe operation.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a schematic view of a system for loading UV light source electronics according to the present invention;
FIG. 3 is a schematic view of the electronic structure for loading by UV light source according to the present invention;
FIG. 4 is a schematic view of the side-by-side construction of the present invention;
FIG. 5 is a schematic diagram of a reflection method structure according to the present invention.
Detailed Description
A micro-discharge test method for loading electrons by a UV light source comprises the following specific steps as shown in figure 1:
(1) Placing the UV light source and the test piece in vacuum equipment at the same time, and aligning the optical fiber in the UV light source to the area within 1cm around the vent hole on the test piece when using the side method as shown in figure 4; the outer wall and the inner wall of the test piece are made of the same metal material, the optical fiber is placed on the left side and the right side of the peripheral side edge of the exhaust hole for 1cm, the optical fiber moves randomly after the electron generation, a large amount of electrons can enter the test piece through the exhaust hole instantly after being generated, and the electronic excitation effect in a simulation space is sufficient;
the UV light source can provide stable current, can select arc lamps supporting the maximum 1600W, digitally displays the power, the current, the voltage, the service time and the like of the arc lamps, and is provided with an RS232 interface and a GPIB interface for PC remote control;
when the reflection method is used, as shown in fig. 5, a reflecting plate which is made of the same material and is coated with the same material as a test piece is placed at a position which is less than 5cm away from an exhaust hole, an optical fiber is aligned to the reflecting plate, the feasibility of a plurality of product tests is considered, a baffle which is made of the same material and is coated with the same material as the test piece is placed at a position which is less than 5cm away from the exhaust hole, according to the characteristics of an inner layer of a product to be tested, a square reflecting plate which is made of 5cm by 5cm and is used in the test and is used as the product is aligned to the baffle through the optical fiber, a large amount of electrons are generated, and after the electrons are generated, the electrons move freely, enter the product and excite micro discharge.
The two methods generate a large amount of free electrons, and adjust the aperture and the voltage of the UV light source to enable the energy of the UV laser to be more than 40 muW;
(2) Obtaining the number of electrons generated by the optical fiber acting on the surface of the test piece through calculation or measurement, and if the number of the electrons is more than 100 in 100 mu s, enabling the free electron condition generated by micro-discharge to meet the requirement, and entering the step (3);
(3) Turning off the UV light source, starting the vacuum equipment, and enabling the UV light source to be in a vacuum environment which is better than 6.65X 10 - 3 Pa, after keeping a vacuum environment for a certain time, preparing to carry out a micro-discharge test;
(4) And starting a UV light source power supply, keeping for half an hour, starting micro-discharge test equipment and completing preheating, loading a power signal on a test piece, adjusting a zero setting signal to be less than-60 dBm, recording test data according to a certain time interval in the test process, observing the zero setting signal and judging whether an abnormal phenomenon occurs, and if the zero setting signal is less than-60 dBm all the time, ending the test and closing the UV light source power supply.
In the step (4), if the zero setting signal is not always less than-60 dBm, namely the zero setting signal is abnormal, the power data during discharging and the image data of the zero setting signal are reserved, if the zero setting signal changes to be more than-60 dBm and can be artificially preset to be less than-60 dBm, the abnormal condition is recorded, the test is continued, and if the zero setting signal changes to be more than-60 dBm and can not be artificially preset to be less than-60 dBm, the test is immediately stopped.
The method for calculating the quantity of electrons generated by the optical fiber acting on the surface of the test piece in the step (2) comprises the following steps: by passing
Figure BDA0002253445660000051
Determining the charge E of an electron, i.e. the photon energy E p In which E e Is the energy of the excited free electrons; psi is the work function of the substance, v is the frequency of the incident light, and h is the Planckian constant;
according to
Figure BDA0002253445660000052
Determining the number of photons generated per second n, where E p Is the photon energy, P is the corresponding light source power, and s is time.
TABLE 1 work function and limiting wavelength of several metals
Figure BDA0002253445660000061
According to the theory of photoelectric effect, it is known that light with a wavelength less than a certain critical value (i.e. the limiting wavelength) can emit electrons, and for materials used in aerospace, such as gold plating, silver plating, copper, aluminum, etc., the limiting wavelength is at least 258nm (gold). It is clear that a UV laser with a wavelength of 254nm can be chosen to meet the requirements.
When ultraviolet light irradiates a metal surface in a vacuum environment, free electrons are excited from the surface under the action of a photoelectric effect, the energy Ee of the excited free electrons is about 0.4eV (the electron work function psi of copper is 4.5 eV), and the frequency v (1.18X10) is selected 15 Hz, i.e., 254nm wavelength), it is known that the number of free electrons that can be generated by a photon having an energy of 4.9eV is 8.5x10 5 And (4) respectively.
1) First, the energy of one photon for a 254nm wavelength light source was calculated to be 4.9eV, which was converted to joules, 4.9 by 1.6 by 10 -19 J; for 37 uW UV, the energy is 37 x10 in 1 second -6 W*1s=37*10 -6 J; so that the power of the ultraviolet light releases photons in 1 second at a number of (37 x 10) -6 W*1s)/(4.9*1.6*10 -19 J)=4.72*10 13 And (4) respectively.
2) The number of free electrons which can be generated by a photon with energy of 4.9eV is 8.5x10 -5 4.72 x10 13 The number of free electrons that can be generated by an individual photon is: 4.72*10 13 *(8.5*10 -5 )=4*10 9 And (4) respectively.
3) The theoretical number of free electrons generated during a 100 μ s pulse duration is: (4*10 9 electrons/sec)*100*10 -6 s=8.5x10 5 And (3) the requirements are met. Meanwhile, the cosine distribution trend of free electrons on the outer surface of the metal is considered, and a peak value appears near the UV light source in the row cavity of the to-be-detected piece; the pulse duration may be shorter than 10 mus, in which case the experiment proves that the free electron conditions for the micro-discharge to occur are still satisfactory.
In summary, the UV laser energy distribution is selected: the UV laser light source with the wavelength of 254nm being more than 40 μ W completely meets the requirement of free electron number.
The method for measuring the quantity of electrons generated by the optical fiber acting on the surface of the test piece in the step (2) comprises the following steps: as shown in fig. 3, comprises a power supply, a lamp box, an optical fiber, two copper plates with a support platform and an ammeter;
the lamp box provides convergence of the UV light source, provides collimation and focusing output, provides a built-in refrigeration fan with a back reflection plate, and increases laser output energy;
two copper plates are arranged in vacuum equipment and are oppositely arranged, one copper plate is provided with a hole for passing through an optical fiber,
the power supply supplies power for the lamp box, one end of the optical fiber is connected with the lamp box, the other end of the optical fiber penetrates through the small hole of one of the copper plates, the light beam irradiates on the other copper plate opposite to the light beam, reverse voltage is applied to two sides of the copper plate, photoelectrons generated by the light source irradiating on the other copper plate form reverse current under the action of the reverse voltage, the magnitude of the reverse current I can be tested through an ammeter, the quantity of the photoelectrons generated in the test can be calculated according to I = nesv, wherein e is the electric quantity of one electron, s is the area of the copper plate, v is the charge speed, and n is the number of the photoelectrons.
A system for loading electrons through a UV light source is shown in figure 2 and comprises a power supply, a lamp box and optical fibers, wherein the power supply supplies power to the lamp box, one end of each optical fiber is connected with the lamp box, and when a side approach method is used, the other end of each optical fiber is aligned to an area within 1cm of the periphery of an air vent in a test piece; when the reflection method is used, a reflecting plate which is made of the same material and coated with the same material as the test piece is placed at a position which is less than 5cm away from the exhaust hole, the other end of the optical fiber is aligned to the reflecting plate, a large number of electrons are generated by the two methods, the aperture and the voltage of the UV light source are adjusted, the energy of the UV laser is enabled to be larger than 40 muW, the number of the electrons generated when the optical fiber acts on the surface of the test piece is obtained through calculation or measurement, and if the number of the electrons is larger than 100 within 100 mus, the free electron condition generated by micro-discharge meets the requirement.
The optical fiber adopts a 78365 type negative-induction resistant single-core optical cable manufactured by Newport company in America, the outer diameter of a fiber core is 600 mu m, the outer diameter of a coating is 660 mu m, the length is 1 m, and an SMA interface is arranged. In the micro-discharge UV laser electron source system, an outer sheath is made of stainless steel materials in a customized mode, and one end of the whole optical fiber in a tank is cut off.
Examples
Two copper supports with supporting platforms are arranged in the vacuum tank, the optical fiber passes through the small hole of one copper support, and the light beam irradiates the copper plate. Reverse voltage is applied to two sides of the copper plate, photoelectrons generated by the light source irradiating the copper plate form reverse current under the action of the reverse voltage, and the quantity of the generated photoelectrons is calculated by testing the magnitude of the reverse current. The number of tested photoelectrons and the calculated value are different, and a part of the photoelectrons escape after being generated and are not collected by the collection method.
TABLE 2 light power test results and aperture corresponding relationship
Figure BDA0002253445660000081
According to the corresponding test result, the size of the aperture can be adjusted, and the number of electrons can be calculated according to the corresponding power value.
By controlling the wavelength and energy distribution of the UV light source, the UV light source is irradiated on the metal through the quartz optical fiber, and excited electrons required by micro-discharge can be generated. On the basis of the embedding method, through theory and experimental research, a side method and a reflection method are invented for exciting electrons of a UV light source in a micro-discharge test, and the method is a method to be protected.
The UV laser wavelength of the invention takes 254nm as the center, and the diameter of the UV optical fiber is 0.5mm-3mm.
The UV light source is applied to the micro-discharge test for the first time, so that the test is designed to verify the test design method. The test piece mainly processed by the overall scheme of the test is an L-waveband coaxial transmission line, the test frequency is that the test piece selects an aluminum product silver plating process, 2 test pieces are installed in each batch of the test, the test aim is to verify the influence of different electronic sources on the micro-discharge threshold of the test piece, the initial input pulse power is 100us, and the duty ratio is 1%.
The free electron source in the ground test is used for providing sufficient electrons, the electrons do not participate in micro-discharge, and only secondary electrons with low energy participating in a discharge mechanism are generated; cesium 137 generates electrons with large energy, and free electrons of an inappropriate energy contribute to excitation of microdischarges, and particles with high energy also participate in providing free electrons through ions, and low-energy electrons can also be ejected from the surface by collision with the surface of a component and the surface of a vacuum system. The electron that really plays a role reachs the sensitive area, and to the UV light source that produces electron number more, the test piece is not airtight, and in the time quantum that UV light source opened, the test piece was in a large amount of electron encirclements, through the exhaust hole, can have a large amount of electrons of moving simultaneously in the test piece, and these sufficient electrons have aroused the microdischarge.
TABLE 3 test results of the influence of UV light source position change on micro-discharge threshold
Figure BDA0002253445660000091
The test result shows that:
1) Free electrons need to be added in a micro-discharge test, and the reliability deviation between the test in the last day and the ground test can be caused by the threshold difference (10 dB) between the application and non-application of the free electrons;
2) The threshold for exciting microdischarges is the same for both the reflection and the insertion methods.
3) The difference between the micro-discharge threshold values of the side method and the reflection method and the embedding method is 1dB, and the micro-discharge threshold values are acceptable ranges for micro-discharge tests.
From the above, the testing method using the UV light source of the invention is an operable, convenient and feasible method.
As described above, the present invention is only the best embodiment, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily deduce or replace the technical scope of the present invention to cover the blephar scope of the present invention.
Those skilled in the art will appreciate that those matters not described in detail in the present specification are not particularly limited to the specific examples described herein.

Claims (4)

1. A micro-discharge test method for loading electrons through a UV light source is characterized by comprising the following specific steps:
(1) Placing the UV light source and the test piece in vacuum equipment at the same time, and aligning an optical fiber in the UV light source to an area within 1cm around an air vent on the test piece when using a side method; when the reflection method is used, a reflecting plate which is made of the same material and coated with the same material as the test piece is placed at a position which is less than 5cm away from the exhaust hole, the optical fiber is aligned to the reflecting plate, a large number of free electrons are generated by the two methods, and the aperture and the voltage of the UV light source are adjusted to enable the UV laser energy to be larger than 40 mu W;
(2) Obtaining the quantity of electrons generated by the optical fiber acting on the surface of the test piece through calculation or measurement, and if the quantity of the electrons is more than 100 in 100 mu s, enabling the free electron condition generated by micro-discharge to meet the requirement, and entering the step (3);
(3) Turning off the UV light source, starting the vacuum equipment, and enabling the UV light source to be in a vacuum environment which is better than 6.65X 10 -3 Pa, after keeping a vacuum environment for a certain time, preparing to carry out a micro-discharge test;
(4) Starting a UV light source power supply, keeping for half an hour, starting micro-discharge test equipment and completing preheating, loading a power signal on a test piece, adjusting a zero setting signal to be less than-60 dBm, recording test data according to a certain time interval in the test process, observing the zero setting signal and judging whether an abnormal phenomenon occurs, and if the zero setting signal is always less than-60 dBm, ending the test and closing the UV light source power supply;
in the step (4), if the zero setting signal is not always smaller than-60 dBm, the zero setting signal is abnormal, and power data and image data of the zero setting signal during discharging are reserved;
in the step (4), if the zero setting signal changes to be more than-60 dBm and can be manually adjusted to be less than-60 dBm, recording that the abnormity occurs, and continuing the test;
in the step (4), if the zero setting signal changes to be more than-60 dBm and cannot be manually adjusted to be less than-60 dBm, the test is immediately stopped;
the method for calculating the number of electrons generated by the optical fiber acting on the surface of the test piece in the step (2) comprises the following steps: by passing
Figure FDA0003930406550000011
Determining the charge E of an electron, i.e. the photon energy E p In which E e To activateFree electron energy of the emission; psi is the work function of the substance, v is the frequency of the incident light, and h is the Planckian constant;
according to
Figure FDA0003930406550000021
Determining the number of photons generated per second n, where E p Is the photon energy, P is the corresponding light source power, s is the time;
the method for measuring the quantity of electrons generated by the optical fiber acting on the surface of the test piece in the step (2) comprises the following steps: comprises a power supply, a lamp box, optical fibers, two copper plates with support tables and an ammeter;
two copper plates are arranged in vacuum equipment and are oppositely arranged, one copper plate is provided with a hole for passing an optical fiber,
the power supply supplies power for the lamp box, one end of the optical fiber is connected with the lamp box, the other end of the optical fiber penetrates through the small hole of one of the copper plates, a light beam irradiates on the other opposite copper plate, reverse voltage is applied to two sides of the copper plate, photoelectrons generated by the light source irradiating on the other copper plate form reverse current under the action of the reverse voltage, the magnitude of the reverse current I can be tested through an ammeter, the quantity of the photoelectrons generated in the test can be calculated according to I = nesv, wherein e is the electric quantity of an electron, s is the area of the copper plate, v is the charge speed, and n is the photon number.
2. A system for loading electrons through a UV light source is characterized by comprising a power supply, a lamp box and optical fibers, wherein the power supply supplies power to the lamp box, one end of each optical fiber is connected with the lamp box, and when a side approach is used, the other end of each optical fiber is aligned to an area within 1cm of the periphery of an air vent in a test piece; when a reflection method is used, a reflecting plate which is made of the same material and coated with the same material as the test piece is placed at a position which is less than 5cm away from the exhaust hole, the other end of the optical fiber is aligned to the reflecting plate, a large number of electrons are generated by the two methods, the aperture and the voltage of the UV light source are adjusted, the UV laser energy is enabled to be more than 40 mu W, the number of electrons generated when the optical fiber acts on the surface of the test piece is obtained through calculation or measurement, and if the number of the electrons is more than 100 in 100 mu s, the free electron condition generated by micro-discharge meets the requirement;
the method for measuring the quantity of electrons generated by the optical fiber acting on the surface of the test piece comprises the following steps: comprises a power supply, a lamp box, optical fibers, two copper plates with support tables and an ammeter;
two copper plates are arranged in vacuum equipment and are oppositely arranged, one copper plate is provided with a hole for passing an optical fiber,
the power supply supplies power for the lamp box, one end of the optical fiber is connected with the lamp box, the other end of the optical fiber penetrates through the small hole of one of the copper plates, the light beam irradiates on the other copper plate opposite to the light beam, reverse voltage is applied to two sides of the copper plate, photoelectrons generated by the light source irradiating on the other copper plate form reverse current under the action of the reverse voltage, the magnitude of the reverse current I can be tested through an ammeter, the quantity of the photoelectrons generated in the test can be calculated according to I = nesv, wherein e is the electric quantity of one electron, s is the area of the copper plate, v is the charge speed, and n is the number of the photoelectrons.
3. The system for loading electrons through a UV light source as claimed in claim 2, wherein the method for counting the number of electrons generated by the optical fiber acting on the surface of the test piece is as follows: by passing
Figure FDA0003930406550000031
Determining the charge E of an electron, i.e. the photon energy E p In which E e Is the energy of the excited free electrons; psi is the work function of the substance, v is the frequency of the incident light, and h is the Planckian constant;
according to
Figure FDA0003930406550000032
Determining the number of photons generated per second n, where E p Is the photon energy, P is the corresponding light source power, and s is time.
4. The system for loading electrons through a UV light source of claim 2 wherein the UV laser wavelength is centered at 254nm and the UV fiber diameter is 0.5mm to 3mm.
CN201911043332.7A 2019-10-30 2019-10-30 Micro-discharge test method and system for loading electrons through UV light source Active CN110988513B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911043332.7A CN110988513B (en) 2019-10-30 2019-10-30 Micro-discharge test method and system for loading electrons through UV light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911043332.7A CN110988513B (en) 2019-10-30 2019-10-30 Micro-discharge test method and system for loading electrons through UV light source

Publications (2)

Publication Number Publication Date
CN110988513A CN110988513A (en) 2020-04-10
CN110988513B true CN110988513B (en) 2022-12-27

Family

ID=70082573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911043332.7A Active CN110988513B (en) 2019-10-30 2019-10-30 Micro-discharge test method and system for loading electrons through UV light source

Country Status (1)

Country Link
CN (1) CN110988513B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112240968B (en) * 2020-08-31 2023-06-30 北京空间飞行器总体设计部 Method for loading and quantifying initial free electrons in micro-discharge test piece

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210545A (en) * 2010-03-30 2011-10-20 Iwasaki Electric Co Ltd Microwave discharge light source device
CN105223170A (en) * 2014-05-30 2016-01-06 中国科学院空间科学与应用研究中心 A kind of device and method of simulating micro space debris shock induced discharge
CN105987889A (en) * 2015-02-11 2016-10-05 中国科学院空间科学与应用研究中心 Measuring apparatus for photoelectronic emission of metal material of satellite and application method thereof
CN109142924A (en) * 2015-10-01 2019-01-04 景祝强 A kind of charge and discharge analogy method induced based on electronics

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104849629B (en) * 2015-04-23 2018-08-14 中国电子科技集团公司第四十一研究所 Multipactor detects two-way microwave signal Automatic Zero Set and method
CN208818791U (en) * 2018-08-03 2019-05-03 北京优诺信创科技有限公司 A kind of novel micro discharge free electron generation device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210545A (en) * 2010-03-30 2011-10-20 Iwasaki Electric Co Ltd Microwave discharge light source device
CN105223170A (en) * 2014-05-30 2016-01-06 中国科学院空间科学与应用研究中心 A kind of device and method of simulating micro space debris shock induced discharge
CN105987889A (en) * 2015-02-11 2016-10-05 中国科学院空间科学与应用研究中心 Measuring apparatus for photoelectronic emission of metal material of satellite and application method thereof
CN109142924A (en) * 2015-10-01 2019-01-04 景祝强 A kind of charge and discharge analogy method induced based on electronics

Also Published As

Publication number Publication date
CN110988513A (en) 2020-04-10

Similar Documents

Publication Publication Date Title
Schramm et al. First results with the novel petawatt laser acceleration facility in Dresden
Forck Lecture notes on beam instrumentation and diagnostics
Wang et al. SGR-like behaviour of the repeating FRB 121102
Solomonov et al. CLAVI pulsed cathodoluminescence spectroscope
Leemans et al. Interaction of relativistic electrons with ultrashort laser pulses: generation of femtosecond X-rays and microprobing of electron beams
CN110988513B (en) Micro-discharge test method and system for loading electrons through UV light source
Scuderi et al. Time of Flight based diagnostics for high energy laser driven ion beams
Marsh et al. Performance of a second generation X-band rf photoinjector
CN102939567B (en) Optical system
Bengtson et al. Broad-spectrum electron gun for laboratory simulation of orbital environments
Wittenburg Specific instrumentation and diagnostics for high-intensity hadron beams
Bell et al. The development of vacuum phototriodes for the CMS electromagnetic calorimeter
Gershuni et al. A gatling-gun target delivery system for high-intensity laser irradiation experiments
CN208818791U (en) A kind of novel micro discharge free electron generation device
CN116233341A (en) High-resolution high-brightness backlight photographing method based on picosecond laser driving
EP2320528A1 (en) Source of short pulses of high-energy photons and method of generating a short pulse of high-energy photons
Hofmann et al. Design of a laser-based profile monitor for LINAC4 commissioning at 50 MeV and 100 MeV
Kovermann Comparative studies of high-gradient RF and DC breakdowns
CN212569168U (en) Accurate measurement device of scintillator afterglow
Gobet et al. Particle characterization for the evaluation of the 181mTa excitation yield in millijoule laser induced plasmas
Laface et al. X-rays energy measurements during the RFQ conditioning at the European Spallation Source
Borghesi et al. Ion source development and radiobiology applications within the LIBRA project
Karabut Study of energetic and temporal characteristics of X-ray emission from solid-state cathode medium of high-current glow discharge
DeCiccio et al. Generation of MeV x-rays with 3-mJ, picosecond laser pulses
Asif et al. Electron temperature measurement using PIN diodes as detectors to record the x-ray pulses from a low-energy Mather-type plasma focus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant