CN110988487B - Microwave microfluid sensor based on T-shaped feeder line excitation complementary open-loop resonator - Google Patents

Microwave microfluid sensor based on T-shaped feeder line excitation complementary open-loop resonator Download PDF

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CN110988487B
CN110988487B CN201911184154.XA CN201911184154A CN110988487B CN 110988487 B CN110988487 B CN 110988487B CN 201911184154 A CN201911184154 A CN 201911184154A CN 110988487 B CN110988487 B CN 110988487B
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microstrip line
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metal sheet
microwave
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CN110988487A (en
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赵文生
甘宏祎
陈世昌
徐魁文
王高峰
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Hangzhou Dianzi University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G01R27/2635—Sample holders, electrodes or excitation arrangements, e.g. sensors or measuring cells
    • G01R27/2658—Cavities, resonators, free space arrangements, reflexion or interference arrangements
    • G01R27/2664—Transmission line, wave guide (closed or open-ended) or strip - or microstrip line arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more

Abstract

The invention discloses a microwave micro-fluid sensor based on a T-shaped feeder line excitation complementary open-loop resonator, which is used for measuring the complex dielectric constant of an electrolyte solution. The micro-strip line structure comprises a micro-strip line structure, a metal sheet I, a dielectric layer, a metal sheet II and a grooved metal CSRR structure; the groove-cutting metal CSRR structure is a square groove ring, the groove ring is provided with an opening, the part between two grooves which are connected at right angles and opposite to the opening of the groove ring is an area with the maximum electric field intensity, the area is provided with a microfluidic chip, electrolyte solution is injected into the chip, and an S parameter curve of the sensor is measured by a vector network analyzer. The invention has high transverse sensitivity Q value, and ensures the accuracy of measurement.

Description

Microwave microfluid sensor based on T-shaped feeder line excitation complementary open-loop resonator
Technical Field
The invention belongs to the technical field of microwaves, relates to a T-shaped microstrip feeder excitation sensor, and particularly relates to a microwave micro-fluid sensor based on a complementary open-loop resonator (complementary split-ring resonator-CSRR) and used for measuring the complex dielectric constant of an electrolyte solution.
Background
Complex dielectric constant (. epsilon.) of electrolyte solutionr＝ε′r(1-jtanδe),ε′rDenotes the dielectric constant, tan. deltaeRepresenting loss values) is crucial for the fields of bio-electromagnetism and microwave chemistry. The microwave interacts with the electrolyte, wherein the absorption rate of the microwave energy is closely related to the complex dielectric constant of the electrolyte. In industry, the complex dielectric constants of various electrolyte materials are known, and the absorption and reflection conditions of the materials to microwaves can be further known, which has the problem of how to improve the utilization rate of microwave energy and the likeHas important significance.
With the rapid development of microwave technology in various industries (such as military, medicine, food, chemical and meteorology fields), various types of radio frequency microwave devices are gradually developed and applied, wherein the research of microwave sensors for measuring the complex dielectric constant of electrolyte materials has been receiving wide attention of scholars. There are many methods for measuring the complex dielectric constant, and the methods are mainly classified into a resonance method and a non-resonance method. The most typical method in the resonance method is a resonant cavity method, and the measurement method has almost no interference of external factors on measurement, so that the method is the most accurate method for measuring the complex dielectric constant of the electrolyte material. The design idea of the resonant cavity method is to place a sample to be measured with a fixed size into a set position in the resonant cavity, and then reversely deduce the complex dielectric constant of the sample to be measured according to the change of S parameters of the resonant cavity and the difference of quality factor Q values. In existing miniaturized microwave sensors based on the resonance principle, the complex permittivity sensing characterization of the electrolyte material has the same properties, i.e. they all reduce the resonance frequency and the quality factor. The variation of the resonant frequency determines the transverse sensitivity of the sensor, and the larger the variation of the resonant frequency is, the higher the transverse sensitivity is; the magnitude of the quality factor and the amount of variation determine the longitudinal sensitivity of the sensor, and the higher the quality factor, the greater the amount of variation, the higher the longitudinal sensitivity. However, the main evaluation index of the sensor performance is whether the sensor has high enough sensitivity, the existing microwave microfluidic sensor based on the CSRR resonator for measuring the complex dielectric constant of the dielectric solution has low transverse sensitivity, and as the dielectric constant of the electrolyte solution is increased, the quality factor is continuously reduced, so that the measuring range of the loss of the electrolyte solution is reduced too fast, and the longitudinal sensitivity is reduced all the time. In view of the above, some scholars in the microwave field at home and abroad design microwave microfluidic sensors capable of effectively improving the lateral sensitivity. For example, Amir Ebrahimi has published a periodical paper "High-Sensitivity mechanical-induced Sensor for Microfluidic Dielectric chromatography" based on CSRR, and the transverse Sensitivity of the periodical paper reaches 5.0MHz, which is the highest transverse Sensitivity in the current Sensor based on CSRR; however, when the sensor measures an electrolyte solution with a high dielectric constant, the mass factor is small (when the dielectric constant of the electrolyte solution is 80, the mass factor is reduced to below 30), and the longitudinal sensitivity is too low. The design of the structure of the sensor mainly improves the transverse sensitivity (4.75MHz), inhibits the longitudinal sensitivity reduction speed (when the dielectric constant of an electrolyte solution is 80, the quality factor is still higher than 70), and simultaneously improves the practicability of the miniaturized sensor.
Disclosure of Invention
The invention aims to provide a microwave micro-fluid sensor with simple structure, high sensitivity, high Q value and wide measurement range, which mainly aims at the defects of the prior art. The sensor is designed based on a conventional complementary open-loop resonator and transmission line structure.
The invention is realized according to the following technical scheme:
a microwave microfluid sensor is a single-port device and comprises a microstrip line structure, a metal sheet I, a dielectric layer, a metal sheet II and a grooved metal CSRR structure;
the metal sheet I is laid in a local area on one side of the upper surface of the dielectric layer, and the rest is a blank area;
the microstrip line structure is arranged in a blank area on the upper surface of the dielectric layer and comprises an input/output port positioned at the edge of the dielectric layer, the input/output port is used for being connected with an SMA connector, and the SMA connector is communicated with the vector network analyzer;
the input/output port is connected with a microstrip line structure, the microstrip line structure comprises a T-shaped microstrip line I and a T-shaped microstrip line II, wherein the T-shaped microstrip line I is composed of a first microstrip line and a second microstrip line which are perpendicular to each other and is of an integrally formed structure (a T-shaped structure which rotates 90 degrees anticlockwise); the T-shaped microstrip line II is composed of a third microstrip line and a fourth microstrip line which are vertical to each other and is of an integrally formed structure (a T-shaped structure which rotates 90 degrees clockwise); one end of the first microstrip line is welded to the metal sheet I through a 50-ohm resistor, and the other end of the first microstrip line is connected with the middle point of the second microstrip line; one end of the third microstrip line is used as an input/output port, and the other end of the third microstrip line is connected with the midpoint of the fourth microstrip line; the second microstrip line and the fourth microstrip line are arranged in parallel, and a gap is reserved between the second microstrip line and the fourth microstrip line; the first microstrip line and the third microstrip line are positioned on the same straight line;
furthermore, the length of the T-shaped heads (namely the second microstrip line and the fourth microstrip line) of the T-shaped microstrip line I and the T-shaped microstrip line II is 16mm and are aligned with each other, and the distance between the two T-shaped heads is 7mm and is coupled with the slotted metal CSRR structure at the bottom layer;
further, the length of a third microstrip line of the T-shaped microstrip line I is integral multiple of the 1/4 wavelength, is set to be 26.5mm, and is set to be 2.73mm in width;
further, the total length of the T-shaped microstrip line II and the 50-ohm resistor is 12mm, and the width of the T-shaped microstrip line II is set to be 2.73 mm;
further, the dielectric layer is a square PCB;
the metal sheet II is the same as the dielectric layer in shape, is laid on the lower surface of the dielectric layer, and is etched with a groove-carved metal CSRR structure; the slotted metal CSRR structure is coupled with the microstrip line I and the microstrip line II.
The groove-cutting metal CSRR is of a groove ring structure, the groove ring is provided with an opening, the electric field intensity of a groove area connected between two right angles opposite to the opening of the groove ring is the largest, and the area is provided with a micro-fluidic chip for measuring the complex dielectric constant of an electrolyte solution;
the microfluidic chip is manufactured by processing low-cost Polydimethylsiloxane (PDMS), is a square chip, and is internally provided with a microfluidic channel for storing electrolyte solution; the microflow channel is positioned above the groove;
the center of the slotted metal CSRR structure, the center of a gap between the second microstrip line and the fourth microstrip line are consistent on the plane position;
the distance between the two ends of the second microstrip line and the x-axis outer edge of the grooved metal CSRR structure is p3Preferably 1.5 mm; the nearest distance between the second microstrip line and the y-axis outer edge of the grooved metal CSRR structure is p2Preferably 0.5 mm;
furthermore, the size of the groove ring of the groove-carved metal CSRR structure is set to be 19mm multiplied by 10mm, the groove width is 1mm, the width of the opening of the groove ring is 0.5mm, and the reasonable size of the groove ring enables an electric field to be well bound on the periphery of the groove ring;
furthermore, the metal sheet I is provided with a plurality of through holes which are periodically arranged (for example, two rows and five rows of through holes are arranged), the through holes penetrate through the metal sheet I, the dielectric layer and the metal sheet II, and the peripheral wall of each through hole is metalized so that the metal sheet I is communicated with the metal sheet II at the bottom layer;
the lateral sensitivity of the sensor determines the resolution of the dielectric constant of the electrolyte solution; the quality factor Q value and the longitudinal sensitivity determine the resolution ratio of the electrolyte solution loss; the measuring range and miniaturization determine the practicality of the sensor.
Compared with the prior art, the invention has the following prominent substantive characteristics and remarkable technical progress:
compared with the existing microwave microfluidic sensor based on the CSRR resonator, the invention adopts the T-shaped microstrip line to couple the CSRR, thereby effectively improving the coupling strength between the microstrip line and the CSRR, and enabling the electric field intensity of a groove area which is tightly bound at the edge of the CSRR groove ring and is connected between two right angles opposite to the opening of the groove ring to reach the maximum. Based on the design of the T-shaped microstrip line, the sensor overcomes the defects that the transverse sensitivity of the existing sensor is low and the longitudinal sensitivity is too fast, has high transverse sensitivity and Q value, and ensures the accuracy of measurement. The restriction of the grooved metal CSRR structure of the sensor to a strong field is strong, so that the transverse sensitivity is high, and meanwhile, the coupling between the microstrip line I and the microstrip line II and the grooved metal CSRR structure improves the impedance matching during CSRR resonance, so that the quality factor is improved, the reduction of the quality factor when the loss of the high-dielectric-constant electrolyte solution is measured is relieved, and the longitudinal sensitivity is improved.
Drawings
FIG. 1 is a schematic diagram of the structure and parameter labeling diagram of the present invention: wherein (a) a schematic top sensor layer, (b) a schematic bottom sensor layer, (c) a schematic plan sensor layer;
FIG. 2 is a schematic diagram of the electric field intensity distribution of the present invention;
FIG. 3 is a schematic diagram of the structure and parameter labeling of the microfluidic chip according to the present invention;
FIG. 4 is a schematic diagram of a three-dimensional hierarchical layout structure of the present invention;
FIG. 5 is a schematic diagram of the S parameter before and after placing the microfluidic chip on the sensor of the present invention;
fig. 6 is a schematic diagram showing the relationship between the reflection coefficient of the sensor and the complex dielectric constant of the electrolyte solution injected into the microfluidic chip after the microfluidic chip is placed on the sensor according to the present invention.
The PCB board is provided with a PCB board; 2. a metal sheet I; 3. a through hole; 4. a microstrip line I; 5, SMA connector; a resistance of 6.50 Ω; 7. a microstrip line II; 8. a metal foil II; a CSRR slot ring; 10. area of maximum electric field strength/sensitive area.
Detailed Description
The present invention will be described in further detail with reference to the following examples in conjunction with the accompanying drawings.
As shown in fig. 1, which is a schematic structural diagram of the present invention, the sensor of the present invention includes a top microstrip line structure, a top metal sheet i 2, a middle PCB board 1, and a CSRR slot ring 9 etched on a bottom metal sheet ii 8; the top microstrip line structure comprises two sections of microstrip lines: one end of the second microstrip line II 7 is welded to the metal sheet I2 through a 50-ohm resistor 6, and the T-shaped head of the other end of the second microstrip line II 7 is aligned with the T-shaped head of the first microstrip line I4; a feed long pin extends out of the other end of the first microstrip line I4 and is used for being connected with an SMA connector 5; the microstrip line I4 and the microstrip line II 7 are coupled with the CSRR tank ring 9 on the bottom layer;
as shown in fig. 2, which is a schematic diagram of the distribution of electric field intensity of the present invention, the grooved metal CSRR structure is a square groove ring, the groove ring is provided with an opening, wherein the portion between two grooves connected at right angles opposite to the opening of the groove ring is a region 10 with maximum electric field intensity, which is sensitive to the change of complex dielectric constant of the electrolyte solution, so that a microfluidic chip is placed in the region for measuring the complex dielectric constant of the electrolyte solution; the sensor S parameter curve is measured by a Vector Network Analyzer (VNA).
The sensor design of the invention was carried out in a three-dimensional electromagnetic simulation software AnsysHFSS environment, with relevant dimensions obtained by the software, as shown in the following table:
parameter(s) l1 l2 l3 d1 d2 d3 d4 d5
Numerical value (mm) 26.5 15.5 9.5 8.33 8.33 3 4.5 10.5
Parameter(s) r w p1 p2 p3 a b g
Numerical value (mm) 0.5 2.73 1 0.5 1.5 19 10 0.5
Parameter(s) s
Numerical value (mm) 1
The size of the middle layer PCB board is 78 multiplied by 50 multiplied by 0.767mm3High frequency board Rogers RO4350 (dielectric constant 3.66, permeability 1, dielectric loss 0.004, permeability loss 0)
Fig. 3 is a schematic structural diagram of a microfluidic chip according to the present invention, the chip is a square chip processed and manufactured by Polydimethylsiloxane (PDMS), and a microfluidic channel and a liquid inflow and outflow port are disposed in the chip. Before measuring the complex dielectric constant of the electrolyte solution, the electrolyte solution needs to be injected into the micro-flow channel from the liquid inflow port, and after the measurement is finished, the electrolyte solution needs to be discharged from the liquid outflow port;
fig. 4 is a schematic diagram of a three-dimensional hierarchical layout structure of the present invention, in which a microfluidic chip is disposed on a sensor, and the microfluidic chip is used for measurement and can inject electrolyte solution therein.
Fig. 5 is a schematic diagram of S parameters before and after placing the microfluidic chip on the sensor of the present invention, and the reflection parameter of the sensor shows a band stop characteristic, where the resonant frequency is 1.76GHz and the Q value is 220.
Fig. 6 is a schematic diagram showing the relationship between the reflection coefficient of the sensor and the complex dielectric constant of the electrolyte solution injected into the microfluidic chip after the sensor of the present invention is placed on the microfluidic chip, and the complex dielectric constant of the electrolyte solution can be calculated by obtaining the variation of the variation point in the reflection coefficient of the sensor with respect to the reference point. When the dielectric constant of the electrolyte solution is increased from 1 to 80, the frequency offset of the sensor is 380MHz, and the sensitivity of the sensor is 4.75MHz, which is greater than that of the commonly existing sensor based on the CSRR resonator; and when the dielectric constant of the electrolyte solution is 80, the quality factor is more than 70, the high longitudinal sensitivity is still maintained, and the practicability is strong.
The invention has been described above with reference to the accompanying drawings, it is obvious that the invention is not limited to the specific implementation in the above-described manner, and it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial modification, or with substantial modification.

Claims (9)

1. The microwave microfluid sensor based on the T-shaped feeder line excitation complementary open-loop resonator is a single-port device and is characterized by comprising a microstrip line structure, a metal sheet I, a dielectric layer, a metal sheet II and a slotted metal CSRR structure;
the metal sheet I is laid in a local area on one side of the upper surface of the dielectric layer, and the rest is a blank area;
the microstrip line structure is arranged in a blank area on the upper surface of the dielectric layer and comprises an input/output port positioned at the edge of the dielectric layer, the input/output port is used for being connected with an SMA connector, and the SMA connector is communicated with the vector network analyzer;
the input/output port is connected with a microstrip line structure, the microstrip line structure comprises a T-shaped microstrip line I and a T-shaped microstrip line II, and the T-shaped microstrip line I is composed of a first microstrip line and a second microstrip line which are perpendicular to each other and is of an integrally formed structure; the T-shaped microstrip line II is composed of a third microstrip line and a fourth microstrip line which are vertical to each other and is of an integrally formed structure; one end of the first microstrip line is welded to the metal sheet I through a 50-ohm resistor, and the other end of the first microstrip line is connected with the middle point of the second microstrip line; one end of the third microstrip line is used as an input/output port, and the other end of the third microstrip line is connected with the midpoint of the fourth microstrip line; the second microstrip line and the fourth microstrip line are arranged in parallel, and a gap is reserved between the second microstrip line and the fourth microstrip line; the first microstrip line and the third microstrip line are positioned on the same straight line;
the metal sheet II is the same as the dielectric layer in shape, is laid on the lower surface of the dielectric layer, and is etched with a groove-carved metal CSRR structure; the grooved metal CSRR structure is coupled with the microstrip line I and the microstrip line II;
the groove-cutting metal CSRR is of a groove ring structure, the groove ring is provided with an opening, the electric field intensity of a groove area connected between two right angles opposite to the opening of the groove ring is the largest, and the area is provided with a micro-fluidic chip for measuring the complex dielectric constant of an electrolyte solution;
the metal sheet I is provided with a plurality of through holes which are periodically arranged, the through holes penetrate through the metal sheet I, the dielectric layer and the metal sheet II, and the peripheral wall of each through hole is metalized, so that the metal sheet I is communicated with the metal sheet II at the bottom layer.
2. The microwave microfluidic sensor based on a T-shaped feeder line excitation complementary open-loop resonator as claimed in claim 1, wherein the T-shaped heads of the T-shaped microstrip line I and the T-shaped microstrip line II are both 16mm in length and are aligned with each other; the two T-shaped heads are 7mm apart and are coupled to the bottom layer of the grooved metal CSRR structure.
3. The microwave microfluidic sensor based on a T-shaped feeder excited complementary open-loop resonator as claimed in claim 1 or 2, wherein the length of the third microstrip of the T-shaped microstrip I is an integral multiple of 1/4 wavelength.
4. The microwave microfluidic sensor based on a T-shaped feeder excited complementary open-loop resonator according to claim 3, wherein the third microstrip line of the T-shaped microstrip line I has a length of 26.5mm and a width of 2.73 mm.
5. The microwave microfluidic sensor based on a T-shaped feeder excited complementary open-loop resonator according to claim 1, wherein the total length of the T-shaped microstrip line II and the 50 ohm resistor is 12mm, and the width of the T-shaped microstrip line II is set to be 2.73 mm.
6. A T-feed excited complementary open loop resonator based microwave microfluidic sensor as claimed in claim 1 wherein the microfluidic channel is located above the slot.
7. The microwave microfluidic sensor based on a T-type feeder-excited complementary open-loop resonator as claimed in claim 1, wherein the microfluidic chip is fabricated from polydimethylsiloxane PDMS, and is a square chip having a microfluidic channel for storing electrolyte solution.
8. The microwave microfluidic sensor based on a T-type feeder excited complementary open-loop resonator according to claim 1, wherein the center of the slotted metal CSRR structure, the center of the gap between the second microstrip line and the fourth microstrip line are consistent in planar position.
9. The microwave microfluidic sensor based on T-type feeder-excited complementary open-loop resonators as claimed in claim 1, wherein the grooved metal CSRR structure groove ring size is set to 19mm
Figure DEST_PATH_IMAGE001
10mm, the groove width is 1mm, and the width of groove ring opening is 0.5mm, and its reasonable size makes the fine constraint of electric field at the groove ring periphery.
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