CN110971306A

CN110971306A - Bias control method, bias control device, modulator and storage medium

Info

Publication number: CN110971306A
Application number: CN201911128524.8A
Authority: CN
Inventors: 胡蕾蕾; 陈宏刚; 张博; 甘霖飞; 李凤
Original assignee: Accelink Technologies Co Ltd; Wuhan Optical Valley Information Optoelectronic Innovation Center Co Ltd
Current assignee: Accelink Technologies Co Ltd; Wuhan Optical Valley Information Optoelectronic Innovation Center Co Ltd
Priority date: 2019-11-18
Filing date: 2019-11-18
Publication date: 2020-04-07
Anticipated expiration: 2039-11-18
Also published as: CN110971306B

Abstract

The embodiment of the invention discloses a bias control method, which comprises the following steps: obtaining a bias control point of a first moment corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator; acquiring a first locking coefficient corresponding to each phase modulation electrode; determining a bias voltage regulating quantity of each phase modulation electrode corresponding to a second moment based on a bias voltage control point of a first moment corresponding to each phase modulation electrode and a first locking coefficient, and obtaining a plurality of bias voltage regulating quantities of the phase modulation electrodes corresponding to a plurality of second moments; the modulator is bias-controlled based on the plurality of bias adjustment amounts at the first timing. The embodiment of the invention also discloses a bias control device, a modulator and a storage medium.

Description

Bias control method, bias control device, modulator and storage medium

Technical Field

The present invention relates to the field of signal processing, and in particular, to a bias control method, a bias control apparatus, a modulator, and a storage medium.

Background

At present, coherent optical communication technology is adopted for medium-span and long-span transmission. In order to control the working bias voltage of the modulator in coherent optical communication, it is common in the related art to apply a disturbing signal to the phase modulation electrode of the modulator, and directly detect the amplitude of the output signal of the modulator or output the optical power P_outPerforming frequency domain analysis to obtain a working bias voltage; the output optical power P corresponding to the input signal directly based on Fourier transform_outPerforming frequency domain analysis to obtain a working bias voltage; however, this method of calculating the working bias has the problems of high calculation complexity and high requirement on hardware performance.

Disclosure of Invention

In view of this, embodiments of the present invention are expected to provide a bias control method, a bias control device, a modulator, and a storage medium, which effectively solve the problems of high computational complexity and high requirement on hardware performance in the related art for calculating a working bias, improve signal processing efficiency, reduce the requirement on hardware platform performance, and improve the control accuracy of the working bias.

In order to achieve the purpose, the technical scheme of the invention is realized as follows:

a bias control method, the method comprising:

obtaining a bias control point of a first moment corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator;

acquiring a first locking coefficient corresponding to each phase modulation electrode;

determining a bias voltage adjusting quantity of each phase modulation electrode at a second moment on the basis of the bias voltage control point of each phase modulation electrode at a first moment and the first locking coefficient, and obtaining a plurality of bias voltage adjusting quantities of a plurality of phase modulation electrodes at the second moment;

and performing bias control on the modulator based on the bias adjustment amounts at the plurality of second time instants.

Optionally, the determining, based on the bias control point at the first time corresponding to each phase modulation electrode and the first locking coefficient, the bias adjustment amount at the second time corresponding to each phase modulation electrode to obtain the bias adjustment amounts at a plurality of second times corresponding to a plurality of phase modulation electrodes before the first time is the second time includes:

determining a bias voltage adjustment amount of each phase modulation electrode at a first moment on the basis of the bias voltage control point of each phase modulation electrode at the corresponding first moment and the first locking coefficient;

determining a bias control point at a third moment based on the bias adjustment amount at the first moment corresponding to each phase modulation electrode and the bias control point at the first moment corresponding to each phase modulation electrode; wherein the third time is after the first time and before the second time;

and determining the bias voltage adjusting quantity of each phase modulation electrode at the second moment based on the bias voltage control point at the third moment and the first locking coefficient to obtain a plurality of bias voltage adjusting quantities of the phase modulation electrodes at the second moments.

Optionally, the third time and the second time are two adjacent times, and the determining, based on the bias control point at the third time and the first locking coefficient, the bias adjustment amount at the second time corresponding to each phase modulation electrode includes:

determining a bias voltage adjustment amount of each phase modulation electrode at a third moment on the basis of the bias voltage control point at the third moment and the first locking coefficient;

determining a bias voltage control point of a second time corresponding to each phase modulation electrode based on a bias voltage adjustment amount of a third time corresponding to each phase modulation electrode and a bias voltage control point of the third time;

and determining the bias voltage adjusting quantity of each phase modulation electrode at the second moment based on the bias voltage control point at the second moment and the first locking coefficient.

Optionally, the first locking coefficient includes a first quadrature locking coefficient and a first quadrature locking coefficient, and after the obtaining of the first locking coefficient corresponding to each phase modulation electrode, the method further includes:

determining a second orthogonal locking coefficient and a second co-directional locking coefficient based on the first orthogonal locking coefficient and the first co-directional locking coefficient; wherein the second orthogonal locking coefficient and the second homodromous locking coefficient are opposite numbers to each other; wherein the second locking factor comprises the second orthogonal locking factor and the second homodromous locking factor;

correspondingly, the determining, based on the bias control point at the first time corresponding to each phase modulation electrode and the first locking coefficient, the bias adjustment amount at the second time corresponding to each phase modulation electrode to obtain bias adjustment amounts at a plurality of second times corresponding to a plurality of phase modulation electrodes includes:

and determining the bias voltage adjusting quantity of the second time corresponding to each phase modulation electrode based on the bias voltage control point of the first time corresponding to each phase modulation electrode and the second locking coefficient, and obtaining a plurality of bias voltage adjusting quantities of the second time corresponding to a plurality of phase modulation electrodes.

Optionally, obtaining a first quadrature locking coefficient corresponding to each phase modulation electrode includes:

applying a disturbance signal with a preset frequency to each phase modulation electrode to obtain an output signal output by the modulator;

acquiring a first output function corresponding to the output signal, and acquiring a preset orthogonal sine function;

performing integral operation on the first output function and the preset orthogonal sine function to obtain a first integral result;

and obtaining the first orthogonal locking coefficient based on the first integration result and the bias control point at the first moment.

Optionally, the first output function includes a plurality of second output functions corresponding to output signals output by the modulator at a plurality of different time instants, and the integrating operation is performed on the first output function and the preset orthogonal sine function to obtain a first integration result, where the method includes:

performing integral operation on each second output function in the plurality of second output functions and the preset orthogonal sine function to obtain each second integral result; the first integration result comprises a plurality of the second integration results;

correspondingly, the obtaining the first quadrature locking coefficient based on the first integration result and the bias control point at the first time includes:

acquiring a plurality of target bias control points associated with the bias control point at the first moment; the number of the target bias control points is the same as the number of the different time instants;

and obtaining a plurality of third orthogonal locking coefficients based on the plurality of second integration results and the plurality of target bias control points, wherein the first orthogonal locking coefficient comprises a plurality of third orthogonal locking coefficients.

Optionally, obtaining a first lock coefficient corresponding to each phase modulation electrode includes:

acquiring a preset orthogonal cosine function;

performing integral operation on the first output function and the preset orthogonal cosine function to obtain a third integral result;

and obtaining the first homodyne locking coefficient based on the third integration result and the bias control point at the first moment.

Optionally, the first output function includes a plurality of second output functions corresponding to output signals output by the modulator at a plurality of different times, and the performing an integration operation on the first output function and the preset orthogonal cosine function to obtain a third integration result includes:

performing integral operation on each second output function in the plurality of second output functions and the preset orthogonal cosine function to obtain each fourth integral result; the third integration result includes a plurality of the fourth integration results;

correspondingly, the obtaining the first co-lock factor based on the third integration result and the bias control point at the first time includes:

and obtaining a plurality of third syntropic locking coefficients based on the plurality of third integration results and the plurality of target bias control points, wherein the first syntropic locking coefficient comprises a plurality of third syntropic locking coefficients.

A bias control device, comprising:

a first obtaining unit, configured to obtain a bias control point at a first time corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator;

a second obtaining unit configured to obtain a first locking coefficient corresponding to each of the phase modulation electrodes;

a first processing unit, configured to determine, based on the bias control point at the first time corresponding to each phase modulation electrode and the first locking coefficient, a bias adjustment amount at a second time corresponding to each phase modulation electrode, and obtain bias adjustment amounts at a plurality of second times corresponding to a plurality of phase modulation electrodes;

and a second processing unit configured to perform bias control on the modulator based on the bias adjustment amounts at the plurality of second timings.

A modulator, the modulator comprising: a processor, a memory, and a communication bus, comprising:

the communication bus is used for realizing communication connection between the processor and the memory;

the processor is used for executing the program of the bias control method in the memory to realize the following steps:

determining a bias voltage adjusting quantity of a second moment corresponding to each phase modulation electrode based on the bias voltage control point of the first moment corresponding to each phase modulation electrode and the first locking coefficient to obtain a plurality of bias voltage adjusting quantities of the second moments corresponding to a plurality of phase modulation electrodes;

Optionally, the processor is further configured to implement the following steps:

A storage medium storing one or more programs executable by one or more processors to implement the steps of the bias control method described above.

The embodiment of the invention provides a bias control method, a bias control device, a modulator and a storage medium, which comprises the steps of obtaining a bias control point of a first moment corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of the modulator; acquiring a first locking coefficient corresponding to each phase modulation electrode again; determining a bias voltage regulating quantity of each phase modulation electrode at a second moment on the basis of a bias voltage control point of each phase modulation electrode at a first moment and a first locking coefficient, and obtaining a plurality of bias voltage regulating quantities of the phase modulation electrodes at a plurality of second moments; finally, the modulator is subjected to bias control based on the bias adjustment amount at the plurality of second moments. Therefore, the modulator respectively carries out bias voltage regulating quantity calculation on the phase modulation electrodes through the obtained bias voltage control points and the first locking coefficients, realizes bias voltage control on the modulator, solves the problems of high calculation complexity and high requirement on hardware performance of a working bias voltage calculation mode in the related technology, improves signal processing efficiency, reduces the requirement on hardware platform performance, and improves the control precision of the working bias voltage.

Drawings

FIG. 1 is a flow chart illustrating a bias control method according to an embodiment of the present invention;

FIG. 2 is a schematic flow chart illustrating another bias control method according to an embodiment of the present invention;

FIG. 3 is a flowchart illustrating another bias control method according to an embodiment of the present invention;

FIG. 4 is a flowchart illustrating a bias control method according to another embodiment of the present invention;

fig. 5a to 5c are graphs illustrating the orthogonal locking coefficient and the homotropic locking coefficient provided by the embodiment of the present invention;

fig. 6 is a schematic structural diagram of a bias control device according to an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of another bias control device according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of a modulator according to an embodiment of the present invention.

Detailed Description

The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

An embodiment of the present invention provides a bias control method applied to a modulator, and as shown in fig. 1, the method includes the following steps:

step 101, obtaining a bias control point of a first time corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator.

In an embodiment of the invention, the modulator comprises a plurality of phase modulating electrodes. Here, an IQ modulator including a phase modulation electrode I, a phase modulation electrode Q, and a phase modulation electrode P will be described as an example. After an optical signal enters a modulator, firstly, a phase modulation electrode I, a phase modulation electrode Q and a phase modulation electrode P of the IQ modulator are roughly adjusted to obtain a bias control point corresponding to each electrode at a first moment.

In the embodiment of the invention, after receiving an input signal, a modulator firstly performs coarse adjustment on a plurality of phase modulation electrodes of the modulator at a first moment respectively to obtain a bias control point of each electrode at the first moment after the coarse adjustment.

Step 102, a first locking coefficient corresponding to each phase modulating electrode is obtained.

In an embodiment of the present invention, the first locking factor is a constant of one, wherein the first locking factor comprises a quadrature locking factor and a same-direction locking factor. The influence of noise on a bias control algorithm can be reduced by the modulator only if a certain relation exists between the orthogonal locking coefficient and the homodromous locking coefficient, so that the control precision of the modulator is improved.

And 103, determining a bias voltage adjusting quantity of a second moment corresponding to each phase modulation electrode based on the bias voltage control point of the first moment corresponding to each phase modulation electrode and the first locking coefficient, and obtaining a plurality of bias voltage adjusting quantities of the second moments corresponding to a plurality of phase modulation electrodes.

In the embodiment of the invention, after acquiring the bias control point and the first locking coefficient of the phase modulation electrode at the first moment corresponding to each phase modulation electrode, the modulator determines the bias adjustment amount of the modulator at the second moment of each phase modulation electrode according to the bias control point of the phase modulation electrode at the first moment corresponding to each phase modulation electrode and the first locking coefficient of the modulator bias control in a specific calculation mode.

Illustratively, the IQ modulator comprises three electrodes, and after acquiring the bias control points and the first locking coefficients of the three phase modulation electrodes I, Q and P, the modulator determines the bias adjustment amounts corresponding to the phase modulation electrodes I, Q and P according to the bias control points and the first locking coefficients of the phase modulation electrodes I, Q and P.

Here, the first time may be the same as the second time or may be different from the second time. If the first time is the same as the second time, only one adjustment is made to the bias control point corresponding to the first time of each phasing electrode of the modulator. However, the object of the present application is to improve the control accuracy of the operating bias of the modulator, and therefore the modulator requires at least two adjustments per phase modulating electrode. That is, the first time is different from the second time.

And 104, carrying out bias control on the modulator based on the plurality of bias adjustment amounts at the second time.

In the embodiment of the invention, after the modulator obtains the bias voltage adjustment quantity of the second moment corresponding to each phase modulation electrode, the corresponding quantity adjustment is automatically carried out on each phase modulation electrode of the modulator. Here, the second time is an arbitrary time after the first time.

For example, the bias adjustment amount is generated due to the bias caused by the fact that after a signal enters a modulator, an interference factor such as a disturbing signal or noise is mixed into an original signal, and an output result of a signal to be processed is deviated. The modulator obtains the bias adjustment amount in real time based on the acquired parameters, and performs bias adjustment on each electrode of the modulator in real time according to the bias adjustment amount, so that the problem that the quality of the output signal of the modulator is degraded due to drift of the modulator caused by various factors in the working process of the modulator, and further the output signal of the modulator is deviated is solved.

The bias control method provided by the embodiment of the invention comprises the steps of obtaining a bias control point of a first moment corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator; acquiring a first locking coefficient corresponding to each phase modulation electrode; determining a bias voltage regulating quantity corresponding to each phase modulation electrode based on a bias voltage control point corresponding to each phase modulation electrode and a first locking coefficient to obtain a plurality of bias voltage regulating quantities corresponding to a plurality of phase modulation electrodes; the modulator is bias controlled based on a plurality of bias adjustment amounts. Therefore, the modulator respectively carries out bias voltage regulating quantity calculation on the phase modulation electrodes based on the bias voltage control points and the first locking coefficient, realizes bias voltage control on each electrode of the modulator, solves the problems of high calculation complexity and high requirement on hardware performance of a working bias voltage calculation mode in the prior art, improves signal processing efficiency, reduces the requirement on hardware platform performance, and improves the control precision of the working bias voltage.

Based on the foregoing embodiments, an embodiment of the present invention provides a bias control method applied to a modulator, and as shown in fig. 2, the method includes the following steps:

step 201, obtaining a bias control point of a first time corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator.

Step 202, a first locking factor corresponding to each phase modulating electrode is obtained.

Step 203, determining a bias voltage adjustment amount of each phase modulation electrode at a first time based on the bias voltage control point of each phase modulation electrode at the first time and the first locking coefficient.

Wherein the first time is prior to the second time.

In the embodiment of the invention, under the condition that the modulator determines that the first time is before the second time, the modulator determines the bias voltage adjusting quantity of the first time corresponding to each phase modulation electrode based on the bias voltage control point of the first time corresponding to each phase modulation electrode and the first locking coefficient.

Step 204, determining a bias control point at a third time based on the bias adjustment amount at the first time corresponding to each phase modulation electrode and the bias control point at the first time corresponding to each phase modulation electrode.

Wherein the third time is after the first time and before the second time.

In the embodiment of the present invention, when acquiring the bias voltage adjustment amount at the first time corresponding to each phase modulation electrode and the bias voltage control point at the first time corresponding to each phase modulation electrode, the modulator calculates the bias voltage control point at the third time based on the bias voltage adjustment amount at the first time corresponding to each phase modulation electrode and the bias voltage control point at the first time corresponding to each phase modulation electrode. Here, the third time is an intermediate time between the first time and the second time, and the third time is after the first time and before the second time.

And step 205, determining the bias voltage adjustment amount of each phase modulation electrode at the second moment based on the bias voltage control point at the third moment and the first locking coefficient.

In this embodiment of the present invention, step 205 determines the bias voltage adjustment amount at the second time corresponding to each phase modulation electrode based on the bias voltage control point at the third time and the first locking coefficient, and may be implemented by the following steps:

step 205a, the third time and the second time are two adjacent times, and the bias voltage adjustment amount of the third time corresponding to each phase modulation electrode is determined based on the bias voltage control point of the third time and the first locking coefficient.

In the embodiment of the invention, if the third time is a time before the second time, and the third time is adjacent to the second time. At this time, the modulator determines the bias adjustment amount at the third timing corresponding to each phase modulating electrode based on the bias control point at the third timing and the first locking coefficient.

For example, if the third time is not the last time adjacent to the second time, the modulator keeps the first locking factor unchanged when the bias voltage adjustment amount at the next time is subsequently calculated after the first locking factor is acquired at the first time, and only the bias voltage control point at the current time is changed. Here, when the modulator calculates the bias control amount at the next time, the modulator may obtain the bias control point at the current time based on the bias control amount and the bias control point at the previous time, and determine the bias control amount at the current time based on the bias control point at the current time and the first locking coefficient. The above process is repeated until the bias adjustment amount at the target timing (i.e., the second timing) is obtained.

Step 205b, determining the bias control point of the second time corresponding to each phase modulating electrode based on the bias adjustment amount of the third time corresponding to each phase modulating electrode and the bias control point of the third time.

In the embodiment of the invention, the modulator is based on the bias voltage adjusting quantity of the third time corresponding to each phase modulation electrode and the bias voltage control point for determining the final time (namely the second time). Here, the modulator may combine the bias adjustment amount at the third time with the bias control point at the third time to obtain the bias control point at the second time.

And step 205c, determining the bias voltage adjustment amount of each phase modulation electrode at the second moment based on the bias voltage control point at the second moment and the first locking coefficient.

In the embodiment of the present invention, the modulator determines the bias voltage adjustment amount at the second timing corresponding to each phase modulating electrode in the same manner as the manner of determining the bias voltage adjustment amount at the first timing corresponding to each phase modulating electrode, based on the bias voltage control point at the second timing and the first locking coefficient.

And step 206, carrying out bias control on the modulator based on the plurality of bias adjustment amounts at the second time.

It should be noted that, for the descriptions of the same steps and the same contents in this embodiment as those in other embodiments, reference may be made to the descriptions in other embodiments, which are not described herein again.

The bias control method provided by the embodiment of the invention comprises the steps of obtaining a bias control point of a first moment corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator; acquiring a first locking coefficient corresponding to each phase modulation electrode; determining a bias voltage regulating quantity of a second moment corresponding to each phase modulation electrode based on a bias voltage control point of a first moment corresponding to each phase modulation electrode and a first locking coefficient to obtain a plurality of bias voltage regulating quantities of the second moments corresponding to a plurality of phase modulation electrodes; and performing bias control on the modulator based on the plurality of bias adjustment amounts at the second time. Therefore, the modulator respectively carries out bias voltage regulating quantity calculation on the phase modulation electrodes based on the bias voltage control points and the first locking coefficient, realizes bias voltage control on each electrode of the modulator, solves the problems of high calculation complexity and high requirement on hardware performance of a working bias voltage calculation mode in the prior art, improves signal processing efficiency, reduces the requirement on hardware platform performance, and improves the control precision of the working bias voltage.

Based on the foregoing embodiments, an embodiment of the present invention provides a bias control method applied to a modulator, and as shown in fig. 3, the method includes the following steps:

step 301, obtaining a bias control point at a first time corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator.

Step 302, a first quadrature locking coefficient corresponding to each phase modulating electrode is obtained.

Wherein the first locking factor comprises a first quadrature locking factor and a first in-line locking factor.

A second quadrature locking coefficient and a second in-direction locking coefficient are determined based on the first quadrature locking coefficient and the first in-direction locking coefficient.

Wherein the second locking factor comprises a second orthogonal locking factor and a second homodromous locking factor.

Correspondingly, the bias voltage adjustment quantity of the second time corresponding to each phase modulation electrode is determined based on the bias voltage control point of the first time corresponding to each phase modulation electrode and the second locking coefficient, and the bias voltage adjustment quantities of a plurality of second times corresponding to a plurality of phase modulation electrodes are obtained. And performing bias control on the modulator based on the plurality of bias adjustment amounts at the second time.

In the embodiment of the invention, the modulator acquires a plurality of bias control points within a preset range in an equal voltage stepping mode based on the bias control point at the first moment. Further, the modulator determines a bias voltage adjustment amount corresponding to each phase modulation electrode according to the multiple bias voltage control points and the second locking coefficient obtained by the modulator, and obtains multiple bias voltage adjustment amounts corresponding to the multiple phase modulation electrodes.

In the embodiment of the present invention, the first locking coefficient obtained by the modulator includes a first quadrature locking coefficient and a first quadrature locking coefficient.

In practical applications, the phase modulating electrodes in the modulator each generate a first locking factor, and the first locking factors of the phase modulating electrodes each include a first quadrature locking factor and a first quadrature locking factor. In the embodiment of the invention, the modulator is accompanied in the process of carrying out bias modulation on the input signalWith the interference of noise, the non-input signals to be processed are referred to as interference signals, and in order to reduce the interference of the interference signals to the signals to be processed by the modulator, the modulator starts to process the interference signals after receiving a user command. For example, obtaining the phase of a perturbation signal in a modulator

And a constructed preset quadrature base phase

And to

And/or

Performing phase adjustment so that

And at this time, the modulated first locking coefficient is called a second locking coefficient. It should be noted that there is a certain time delay between the application of the disturbing signal and the start of sampling, and this also introduces a part of the phase difference, which is often fixed and unknown. Therefore, even if the second orthogonal locking coefficient and the second homodyne locking coefficient are guaranteed to be mutually opposite, the second orthogonal locking coefficient and the second homodyne locking coefficient cannot be mutually opposite due to the phase difference introduced by the time difference between the application of the disturbing signal and the start time of starting sampling.

Illustratively, the phase difference is fixed for a specific hardware condition and software timing, and the phase difference of the disturbance signal can be calculated by actually acquiring a lock coefficient, namely a second orthogonal lock coefficient and a second homotropic lock coefficient

Or constructed quadrature base phase

So that the second orthogonal locking coefficient and the second homotropic locking coefficient are opposite numbers to each other.

Here, the process of obtaining the first locking coefficient may be implemented in three ways:

the first method is as follows: the user sets the phase of the perturbation signal applied by the modulator to each phase modulating electrode such that the second quadrature locking factor equals the negative second homodyne locking factor.

The second method comprises the following steps: the user sets the phase of the preset quadrature basis so that the second quadrature locking factor is equal to the negative second homodyne locking factor.

The third method comprises the following steps: a phase of a second orthogonal locking coefficient and a phase of a second lock in the second locking coefficient are set based on the phase of the first orthogonal locking coefficient and the phase of the first lock in the first locking coefficient of the modulator so that the second orthogonal locking coefficient is equal to the negative second lock in the same direction.

In this embodiment of the present invention, the obtaining of the first quadrature locking coefficient corresponding to each phase modulation electrode in step 302 may be implemented by the following steps:

step 302a, applying a disturbance signal with a preset frequency to each phase modulation electrode to obtain an output signal output by the modulator.

In the embodiment of the present invention, an I electrode of an IQ modulator is taken as an example for explanation, and a phase modulation electrode I corresponding to the modulator applies a disturbance signal with a preset frequency as an amplitude V₀Frequency f, phase at first moment of time

Of the disturbance signal. The disturbance signal of the preset frequency can be expressed as:

wherein the amplitude of the disturbance signal with the preset frequency is V₀Frequency f, phase at first time

The signal further obtained by the modulator is the output after the preset disturbing signal is appliedAnd (6) outputting a signal.

And step 302b, acquiring a first output function corresponding to the output signal, and acquiring a preset orthogonal sine function.

In the embodiment of the invention, a preset orthogonal sine function is constructed, wherein the frequency of the preset sine function is the same as the frequency of the preset disturbance signal.

Step 302c, performing integral operation on each second output function in the plurality of second output functions and a preset orthogonal sine function to obtain each second integral result.

The first output function comprises a plurality of second output functions corresponding to output signals output by the modulator at a plurality of different moments; wherein the first integration result comprises a plurality of second integration results.

In the embodiment of the invention, a modulator acquires an output signal after a certain phase modulation electrode applies a preset disturbance signal, namely a first output function. The first output function comprises a plurality of second output functions corresponding to the modulator at a plurality of different time instants. Here, the modulator integrates the second output function with a preset orthogonal sine function to obtain a first integration result. Then, the second output functions at a plurality of different time instants are integrated with the preset orthogonal sine function to obtain a plurality of second integration results. Wherein the first integration result comprises a plurality of second integration results.

Step 302d, a first quadrature locking coefficient is obtained based on the first integration result and the bias control point at the first time.

In this embodiment of the present invention, the obtaining of the first quadrature locking coefficient in step 302d based on the first integration result and the bias control point at the first time may be implemented by the following steps:

A. a plurality of target bias control points associated with the bias control point at the first time are obtained.

Wherein the number of the plurality of target bias control points is the same as the number of the plurality of different time instants.

In the embodiment of the invention, the bias voltage device obtains the bias voltage control point of each electrode at the first moment after roughly adjusting each phase modulation electrode. The bias device acquires a bias control point at a first moment corresponding to each electrode, and obtains a plurality of target bias control points associated with the bias control point at the first moment in an equal voltage stepping mode based on the bias control point at the first moment. Here, the number of the target bias control points is the same as the number of the target bias control points at the different times.

B. And obtaining a plurality of third orthogonal locking coefficients based on the plurality of second integration results and the plurality of target bias control points.

Wherein the first orthogonal locking coefficient includes a plurality of third orthogonal locking coefficients.

In the embodiment of the invention, after the modulator obtains a plurality of second integrals and a plurality of target bias voltage points, the plurality of second integrals and the plurality of target bias voltage control points are subjected to linear fitting, and the obtained slope after fitting is taken as the first orthogonal locking coefficient.

Step 303, obtaining a first homodyne lock coefficient corresponding to each phase modulation electrode.

In the embodiment of the present invention, the obtaining of the first homodyne locking coefficient corresponding to each phase modulation electrode in step 303 may be implemented by the following steps:

step 303a, obtaining a preset orthogonal cosine function.

Step 303b, performing an integral operation on each second output function of the plurality of second output functions and a preset orthogonal cosine function to obtain each fourth integral result.

The first output function comprises a plurality of second output functions corresponding to output signals output by the modulator at a plurality of different moments. Wherein the third integration result comprises a plurality of fourth integration results.

In the embodiment of the invention, a modulator acquires an output signal after a certain phase modulation electrode applies a preset disturbance signal, namely a first output function. The first output function comprises a plurality of second output functions corresponding to the modulator at a plurality of different time instants. Here, the modulator performs integration based on the second output function and a preset orthogonal cosine function to obtain a third integration result. Then, the second output functions at a plurality of different moments are integrated with the preset orthogonal cosine function to obtain a plurality of fourth integration results. Wherein the third integration result comprises a plurality of fourth integration results.

And step 303c, obtaining a first homodyne locking coefficient based on the third integration result and the bias control point at the first moment.

In this embodiment of the present invention, the obtaining of the first homodyne lock coefficient in step 303c based on the third integration result and the bias control point at the first time may be implemented by the following steps:

B. And obtaining a plurality of third syntropic locking coefficients based on the plurality of third integration results and the plurality of target bias control points.

Wherein the first co-directional locking factor comprises a plurality of third co-directional locking factors.

In the embodiment of the invention, after the modulator obtains a plurality of third integrals and a plurality of target bias voltage points, the third integrals and the target bias voltage control points are subjected to linear fitting, and the obtained fitted slope is taken as a first homotropic locking coefficient.

Step 304, determining a bias voltage adjustment amount corresponding to each phase modulation electrode based on the bias voltage control point at the first moment corresponding to each phase modulation electrode and the first locking coefficient, and obtaining a plurality of bias voltage adjustment amounts corresponding to a plurality of phase modulation electrodes.

Step 305, bias control is performed on the modulator based on the plurality of bias adjustment amounts at the second time.

Illustratively, an embodiment of the present invention provides a bias control method, which is shown with reference to fig. 4, and includes the following steps:

step 401: and acquiring a Bias control point Bias at a first moment corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of the modulator.

In the embodiment of the invention, after the modulator receives the input signal, the coarse adjustment is firstly carried out on each electrode to obtain the bias control point BiasO of the phase modulation electrode I, Q, P of the IQ modulator at the first moment_k(k＝I/Q/P)。

Step 402: the phase modulation electrode applies disturbance, a pair of bias control points is selected near the bias control point at the first moment, and a first integration result and a third integration result are obtained. The phase modulation electrode applies disturbance, a group of Bias is selected near a Bias voltage point Bias0 at the first moment, and correlation integration results CI and CQ are obtained.

In the embodiment of the invention, the disturbance signal with preset frequency is applied to the phase modulation electrode I corresponding to the modulator as the amplitude V₀Frequency f, phase at first moment of time

Of the disturbance signal. The disturbance signal at the preset frequency is expressed as:

wherein t is time, the amplitude of the preset disturbance signal is generally not more than 10% of the self half-wave voltage period of the phase modulation electrode, and the voltage selection range is generally not more than 10% of the self half-wave voltage period of the phase modulation electrode. Acquiring a preset orthogonal sine function and a preset orthogonal cosine function, and expressing as follows:

the modulator samples the output after the preset frequency disturbing signal is applied; the sampling frequency is the same as the frequency of a preset orthogonal sine function and the frequency of a preset orthogonal cosine function, and is equal to the sampling rate of the light signal emitted by the modulator.

Exemplarily, the bias control point BiasO at the first instant of the phase modulation electrode I_IWithin a certain range, several Bias control points are obtained according to equal voltage steps and are marked as Bias_I,iAnd i is a voltage point serial number. Wherein, the bias control point BiasO at the first moment_IIs BiasO_I,1And the value of i is a positive integer, wherein the number of the selected bias control points is the same as the number of the sampling points at a plurality of different moments, and the bias control point at the first moment is the first bias control point arranged in time sequence in the selected bias control points. Setting the voltage of the phase-modulating electrode I to Bias_I,iThe voltages of the phase modulating electrodes Q, P are set to BiasO respectively_Q、BiasO_PAnd sampling the light emitted from the modulator to obtain a sampling result P output by the modulator within a period of time_outi(t) of (d). Here, the output signal of the modulator is generally received by a detector after being split, and the output signal needs to be filtered and amplified before sampling. Wherein, the sampling frequency is generally an integral multiple of the added disturbance frequency; when phase modulating electrode P lock is performed, the sampling frequency is an integer multiple of the sum of the frequencies of the applied perturbations at I, Q.

Acquired sampling result P_outi(t) is respectively equal to a predetermined positivePerforming integral operation on the alternating sine function and a preset orthogonal cosine function to obtain a first integral result CI_IiFirst integration result CQ_Ii。

CI_Ii＝∫P_outi(t1)*IBase_I(t1)dt

CQ_Ii＝∫P_outi(t1)*qBase_I(t1)dt

Where t1 is the integration time, and the integration time is generally selected to be an integer multiple of the preset period of the perturbation signal. When phase modulation electrode P is locked, integral time selects integral multiple of periods of disturbance signal, preset sine function and preset pre-function. Similarly, a phase modulation electrode I and a phase modulation electrode Q are respectively applied with a frequency f₁、f₂And obtaining an integral result, and calculating to obtain the adjustment quantity of the phase modulation electrode P.

Step 403: and respectively performing linear fitting on the Bias and the CI, the Bias and the CQ, and taking the slope of the Bias and the CI to obtain a first in-line locking coefficient ICoeff and a first quadrature locking coefficient QCoeff.

In the embodiment of the invention, for Bias_I,iAnd CI_IiPerforming a linear fit with a slope of a first homolock coefficient ICoeff_I(ii) a For Bias_Q,iAnd CI_Q,iPerforming linear fitting with slope of the first orthogonal locking coefficient QCoeff_I。

Step 404: the perturbation phase or the quadrature base phase is adjusted.

In the embodiment of the present invention, after acquiring the first quadrature locking coefficient and the first in-line locking coefficient, the modulator detects that the first quadrature locking coefficient is not equal to the negative first in-line locking coefficient as shown in fig. 5 a. In some cases, for example, when the phase of the preset disturbance signal is equal to the phase of the preset sine function and the preset pre-function

May result in a locking coefficient ICoeff_I、QCoeff_IOne of which approaches 0. For example, when CI is seen in FIG. 5b_IAlways 0. At this time, the phase of the preset disturbance signal is determined based on the modulatorThe bits are adjusted or the phase of the sinusoidal function and the pre-function is adjusted to achieve control of the modulator bias.

Illustratively, further, the first quadrature locking coefficient ICoeff is determined according to a first quadrature locking coefficient_IAnd a first locking coefficient QCoeff_IAdjusting the phase of the disturbance signal to

Or adjusting the phase of a sine function and a pre-function

Second quadrature locking factor ICoeff of phase modulating electrode I is obtained again_IAnd a second locking coefficient QCoeff_ISo that ICoeff_I＝-QCoeff_IAs shown in fig. 5 c.

In the same way, disturbance is applied to the phase modulation electrode Q to obtain a first quadrature locking coefficient ICoeff of the phase modulation electrode Q_IAnd a first locking coefficient QCoeff_I；

Similarly, a phase modulation electrode I and a phase modulation electrode Q are respectively applied with a frequency f₁、f₂Obtaining a first quadrature locking coefficient ICoeff of the phase modulating electrode P_IAnd a first locking coefficient QCoeff_I。

Step 405: and (5) all the locking coefficients are obtained, and the control is started.

In the embodiment of the present invention, after the modulator acquires the first orthogonal locking coefficient and the first homotropic locking coefficient of the phase modulation electrode I, Q, P, the obtained parameters are controlled to remain unchanged, that is, the modulator starts a control function for each parameter, and starts automatic real-time control;

step 406: and applying disturbance to the phase modulation electrode to be locked at present, and acquiring correlation integral results CI and CQ under the current bias voltage.

In the embodiment of the invention, the phase of the disturbance signal with the preset frequency applied to the phase modulation electrode I is adjusted to be

Or adjustPhase of orthogonal sine function and preset orthogonal cosine function

Further, the modulator samples the output of the preset frequency disturbing signal after the phase is adjusted. Obtaining the output sampling result P of the modulator in a period of time_outi(t) of (d). Acquired sampling result P_outi(t) respectively carrying out integral operation with a preset orthogonal sine function and a preset orthogonal cosine function to obtain an integral result CI_Ii、CQ_Ii。

Step 407: first orthogonal locking coefficient ICoeff according to locking coefficient_IAnd a first locking coefficient QCoeff_IAnd calculating the adjustment amount of the bias voltage and changing the bias voltage.

In the embodiment of the invention, disturbance is applied to the phase modulation electrode I, and a first integration result CI under the bias voltage of the current phase modulation electrode I is calculated according to the following formula_IThird integration result CQ_IAnd calculating to obtain the adjustment quantity of the phase modulation electrode I:

illustratively, the process of calculating the bias voltage regulating quantity by the modulator on the phase modulation electrode Q and the phase modulation electrode P is the same as that of the phase modulation electrode I, disturbance is applied to the phase modulation electrode Q, an integral result is obtained, and the regulating quantity of the phase modulation electrode Q is obtained through calculation; it should be noted that, the above-mentioned process of obtaining the bias voltage adjustment amount of the multiple phase modulation electrodes may be adjusted according to actual conditions, or the number of iterations is increased to improve the accuracy.

And step 408, locking the next phase modulation electrode.

In the embodiment of the invention, after the modulator finishes the bias voltage adjustment corresponding to each electrode, the next path of signal is adjusted, so that the modulator finishes the automatic bias voltage control in real time.

The bias control method provided by the embodiment of the invention comprises the steps of obtaining a bias control point corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator; acquiring a first locking coefficient corresponding to each phase modulation electrode again; determining a bias voltage regulating quantity corresponding to each phase modulation electrode based on a bias voltage control point corresponding to each phase modulation electrode and a first locking coefficient to obtain a plurality of bias voltage regulating quantities corresponding to a plurality of phase modulation electrodes; finally, the modulator is subjected to bias control based on the plurality of bias adjustment amounts. Therefore, the modulator respectively carries out bias voltage regulating quantity calculation on the phase modulation electrodes through the obtained bias voltage control points and the first locking coefficients, realizes bias voltage control on the modulator, solves the problems of high calculation complexity and high requirement on hardware performance of a working bias voltage calculation mode in the related technology, improves signal processing efficiency, reduces the requirement on hardware platform performance, and improves the control precision of the working bias voltage.

Exemplary, embodiments of the present invention provide a bias control device, which is illustrated with reference to fig. 6.

In the embodiment of the present invention, an IQ modulator is taken as an example, the modulator includes a phase modulation electrode I, P, Q, a phase modulation electrode I, Q of the modulator performs modulator bias voltage control based on a modulation sub mach-zehnder interferometer (MZI), and a phase modulation electrode P of the modulator performs modulator bias voltage control based on a modulation parent mach-zehnder interferometer (MZI). The Digital-to-Analog Converter (DAC) is used for applying a dc offset and a disturbance signal with a preset frequency to the phase modulation electrode, and a part of signal light is separated at the light exit of the modulator and transmitted to a photoelectric Converter (MPD) to be converted into photocurrent, and the photocurrent is filtered and amplified and then sampled by an Analog-to-Digital Converter (ADC). A Micro Control Unit (MCU) analyzes and processes the sampled data.

For an ideal modulator model, its normalized output can be expressed as:

wherein: p_outFor normalized modulator output power, Bias_k(k ═ I/Q/P) is the normalized modulator bias voltage.

The purpose of the modulator Bias control is to control the phase modulating electrode I, Q, P in real time such that the modulator I, Q Bias voltage is at zero and the modulator voltage is at one quarter, i.e., the normalized modulator operating voltage Bias_k(k ═ I/Q/P) equals 1, 1/2, respectively.

For example, after the optical signal enters the modulator, the modulator performs coarse adjustment on the operating voltage based on a common method such as a minimum extinction ratio, so that the bias voltage point at the first time of the modulator is approximately near the operating point. Then, the modulator performs photoelectric conversion on the output optical signal to obtain an electrical signal. Thirdly, the obtained electric signal is filtered and amplified and then converted into an analog digital signal; furthermore, after the analog digital signal is processed by the micro control unit, a disturbance signal is applied to the analog digital signal to obtain a bias voltage control quantity, and finally, the signal is converted into an analog signal by the digital-analog converter to modulate the signal of each phase modulation electrode again.

Based on the foregoing embodiments, an embodiment of the present invention provides a bias control device, as shown in fig. 7, where fig. 7 is a bias control device 5, and the bias control device 5 includes: a first obtaining unit 51, a second obtaining unit 52, a first processing unit 53, a second processing unit 54, wherein:

a first obtaining unit 51, configured to obtain a bias control point at a first time corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator;

a second acquisition unit 52 for acquiring a first locking coefficient corresponding to each phase modulation electrode;

a first processing unit 53, configured to determine, based on the bias control point at the first time corresponding to each phase modulation electrode and the first locking coefficient, a bias adjustment amount at the second time corresponding to each phase modulation electrode, and obtain a plurality of bias adjustment amounts at the second times corresponding to a plurality of phase modulation electrodes;

and a second processing unit 54 for performing bias control on the modulator based on the plurality of bias adjustment amounts at the second timing.

In other embodiments, the bias control device further comprises a third processing unit, wherein:

the third processing unit is used for determining the bias voltage adjustment amount of the first time corresponding to each phase modulation electrode based on the bias voltage control point of the first time corresponding to each phase modulation electrode and the first locking coefficient;

a third processing unit, configured to determine a bias control point at a third time based on the bias adjustment amount at the first time corresponding to each phase modulation electrode and the bias control point at the first time corresponding to each phase modulation electrode; wherein the third time is after the first time and before the second time;

and the third processing unit is used for determining the bias voltage adjusting quantity of the second time corresponding to each phase modulation electrode based on the bias voltage control point at the third time and the first locking coefficient, and obtaining a plurality of bias voltage adjusting quantities of the second time corresponding to the phase modulation electrodes.

In other embodiments, the bias control device further includes a fourth processing unit, wherein:

the fourth processing unit is used for determining a bias voltage adjusting quantity of each phase modulation electrode at the third moment on the basis of the bias voltage control point at the third moment and the first locking coefficient;

a fourth processing unit, configured to determine a bias control point at the second time corresponding to each phase modulation electrode based on the bias adjustment amount at the third time corresponding to each phase modulation electrode and the bias control point at the third time;

and the fourth processing unit is used for determining the bias voltage adjusting quantity of each phase modulation electrode at the second moment based on the bias voltage control point at the second moment and the first locking coefficient.

In other embodiments, the bias control device further comprises a third acquisition unit, wherein:

and a third obtaining unit configured to determine a second orthogonal locking coefficient and a second homotropic locking coefficient based on the first orthogonal locking coefficient and the first homotropic locking coefficient.

The first processing unit 53 is further configured to determine a bias voltage adjustment amount corresponding to each phase modulation electrode based on the bias voltage control point at the first time corresponding to each phase modulation electrode and the second lock coefficient, so as to obtain a plurality of bias voltage adjustment amounts corresponding to the plurality of phase modulation electrodes.

In other embodiments, the bias control device further includes a fourth acquisition unit, wherein:

the first processing unit 53 is further configured to apply a disturbance signal with a preset frequency to each phase modulation electrode to obtain an output signal output by the modulator;

the fourth acquisition unit is used for acquiring a first output function corresponding to the output signal and acquiring a preset orthogonal sine function;

the first processing unit 53 is further configured to perform an integral operation on the first output function and a preset orthogonal sine function to obtain a first integral result;

the first processing unit 53 is further configured to obtain a first quadrature locking coefficient based on the first integration result and the bias control point at the first time.

In other embodiments, the first processing unit 53 is further configured to perform an integral operation on each second output function of the plurality of second output functions and a preset orthogonal sine function to obtain each second integral result; the first integration result comprises a plurality of second integration results;

accordingly, deriving a first quadrature locking factor based on the first integration result and the bias control point at the first time comprises:

a first obtaining unit 51, further configured to obtain a plurality of target bias control points associated with the bias control point at the first time; the number of the target bias control points is the same as the number of the target bias control points at different moments;

the first processing unit 53 is further configured to obtain a plurality of third orthogonal locking coefficients based on the plurality of second integration results and the plurality of target bias control points, where the first orthogonal locking coefficient includes the plurality of third orthogonal locking coefficients.

In other embodiments, the bias control device further includes a fifth acquisition unit, wherein:

a fifth obtaining unit, configured to obtain a preset orthogonal cosine function;

the first processing unit 53 is further configured to perform integral operation on the first output function and a preset orthogonal cosine function to obtain a third integral result;

the first processing unit 53 is further configured to obtain a first homodyne lock coefficient based on the third integration result and the bias control point at the first time.

In other embodiments, the first processing unit 53 in the bias control device is further configured to perform an integration operation on each second output function of the plurality of second output functions and a preset orthogonal cosine function to obtain each fourth integration result; the third integration result comprises a plurality of fourth integration results;

correspondingly, obtaining a first homodyne locking coefficient based on the third integration result and the bias control point at the first moment comprises:

the first processing unit 53 is further configured to obtain a plurality of third lock coefficients based on the plurality of third integration results and the plurality of target bias control points, where the first lock coefficient includes the plurality of third lock coefficients.

The modulator 6 provided by the embodiment of the present invention, the modulator 6 may be applied to a bias control method provided by the embodiment corresponding to fig. 1 to 3, and as shown in fig. 8, the modulator 6 may include: a processor 61, a memory 62, and a communication bus 63, wherein:

the communication bus 63 is used to implement a communication connection between the processor 61 and the memory 62.

The processor 61 is configured to execute the program of the bias control method stored in the memory 62 to implement the following steps:

determining a bias voltage regulating quantity of a second moment corresponding to each phase modulation electrode based on a bias voltage control point of a first moment corresponding to each phase modulation electrode and a first locking coefficient to obtain a plurality of bias voltage regulating quantities of the second moments corresponding to a plurality of phase modulation electrodes;

and performing bias control on the modulator based on the plurality of bias adjustment amounts at the second time.

In other embodiments of the present invention, the processor 61 is configured to execute the memory 62 and is further configured to implement the following steps:

determining a bias voltage adjustment amount of each phase modulation electrode at a first moment on the basis of a bias voltage control point of each phase modulation electrode at the first moment and a first locking coefficient;

and determining the bias voltage adjusting quantity of each phase modulation electrode at the second moment based on the bias voltage control point at the third moment and the first locking coefficient.

determining a bias voltage adjustment amount of each phase modulation electrode at the third moment on the basis of the bias voltage control point at the third moment and the first locking coefficient;

determining a bias voltage control point of a second moment corresponding to each phase modulation electrode based on the bias voltage adjustment amount of the third moment corresponding to each phase modulation electrode and the bias voltage control point of the third moment;

determining a second orthogonal locking coefficient and a second homotropic locking coefficient based on the first orthogonal locking coefficient and the first homotropic locking coefficient; the second orthogonal locking coefficient and the second homodromous locking coefficient are opposite numbers; wherein the second locking coefficient comprises a second orthogonal locking coefficient and a second homodromous locking coefficient

Correspondingly, determining a bias voltage adjustment amount of each phase modulation electrode at a second time based on a bias voltage control point of each phase modulation electrode at a first time and a first locking coefficient, and obtaining a plurality of bias voltage adjustment amounts of each phase modulation electrode at a plurality of second times, the method comprises the following steps:

and determining the bias voltage adjusting quantity of each phase modulation electrode at the second moment on the basis of the bias voltage control point of each phase modulation electrode at the first moment and the second locking coefficient, so as to obtain a plurality of bias voltage adjusting quantities of the phase modulation electrodes at the second moments.

applying a disturbance signal with a preset frequency to each phase modulation electrode to obtain an output signal output by a modulator;

performing integral operation on the first output function and a preset orthogonal sine function to obtain a first integral result;

a first quadrature locking coefficient is obtained based on the first integration result and the bias control point at the first time.

performing integral operation on each second output function in the plurality of second output functions and a preset orthogonal sine function to obtain each second integral result; the first integration result comprises a plurality of second integration results;

acquiring a plurality of target bias control points associated with the bias control point at a first moment; the number of the target bias control points is the same as the number of the target bias control points at different moments;

and obtaining a plurality of third orthogonal locking coefficients based on the plurality of second integration results and the plurality of target bias control points, wherein the first orthogonal locking coefficient comprises the plurality of third orthogonal locking coefficients.

acquiring a preset orthogonal cosine function;

performing integral operation on the first output function and a preset orthogonal cosine function to obtain a third integral result;

and obtaining a first homodyne locking coefficient based on the third integration result and the bias control point at the first moment.

In other embodiments of the present invention, the processor 61 is configured to execute the second memory 62 and is further configured to implement the following steps:

performing integral operation on each second output function in the plurality of second output functions and a preset orthogonal cosine function to obtain each fourth integral result; the third integration result comprises a plurality of fourth integration results;

and obtaining a plurality of third syntropic locking coefficients based on the plurality of third integration results and the plurality of target bias control points, wherein the first syntropic locking coefficient comprises the plurality of third syntropic locking coefficients.

It should be noted that, in this embodiment, the same steps and the same contents as those in the other embodiments may refer to the implementation process in the bias control method provided in the embodiment corresponding to fig. 1 to 3, and are not described herein again.

The signal bias control method provided by the embodiment of the invention comprises the steps of obtaining a bias control point at a first moment corresponding to each phase modulation electrode in a plurality of phase modulation electrodes of a modulator; acquiring a first locking coefficient corresponding to each phase modulation electrode again; determining a bias voltage regulating quantity of each phase modulation electrode at a second moment on the basis of a bias voltage control point of each phase modulation electrode at a first moment and a first locking coefficient, and obtaining a plurality of bias voltage regulating quantities of the phase modulation electrodes at a plurality of second moments; finally, the modulator is subjected to bias control based on the bias adjustment amount at the plurality of second moments. Therefore, the modulator respectively carries out bias voltage regulating quantity calculation on the phase modulation electrodes through the obtained bias voltage control points and the first locking coefficients, realizes bias voltage control on the modulator, solves the problems of high calculation complexity and high requirement on hardware performance of a working bias voltage calculation mode in the related technology, improves signal processing efficiency, reduces the requirement on hardware platform performance, and improves the control precision of the working bias voltage.

Based on the foregoing embodiments, an embodiment of the present invention provides a storage medium storing one or more programs, the one or more programs being executable by one or more processors to monitor first information for a monitoring result, so as to implement the following steps:

In other embodiments of the invention, the one or more programs may be executed by the one or more processors to perform the steps of:

before the second time, the method determines the bias voltage adjustment amount of the second time corresponding to each phase modulation electrode based on the bias voltage control point of the first time corresponding to each phase modulation electrode and the first locking coefficient, and obtains a plurality of bias voltage adjustment amounts of the second time corresponding to a plurality of phase modulation electrodes, and comprises the following steps:

the third time and the second time are two adjacent times, and the bias voltage adjustment quantity of the second time corresponding to each phase modulation electrode is determined based on the bias voltage control point and the first locking coefficient of the third time, and the method comprises the following steps:

In other embodiments of the present invention, the one or more programs are executable by the one or more processors to, if the monitoring result indicates that the first information changes, further include the following steps after obtaining the first locking factor corresponding to each phase modulation electrode:

determining a second orthogonal locking coefficient and a second homotropic locking coefficient based on the first orthogonal locking coefficient and the first homotropic locking coefficient; the second orthogonal locking coefficient and the second homodromous locking coefficient are opposite numbers; wherein the second locking coefficient comprises a second orthogonal locking coefficient and a second homodromous locking coefficient;

a first quadrature locking coefficient is obtained based on the first integration result and the bias control point at the first time. .

In other embodiments, the one or more programs may be executable by the one or more processors to perform the steps of:

acquiring a preset orthogonal cosine function;

The computer-readable storage medium may be a Read Only Memory (ROM), a Programmable Read Only Memory (PROM), an Erasable Programmable Read Only Memory (EPROM), an Electrically Erasable Programmable Read Only Memory (EEPROM), a magnetic Random Access Memory (FRAM), a Flash Memory (Flash Memory), a magnetic surface Memory, an optical Disc, or a Compact Disc Read-Only Memory (CD-ROM); and may be various electronic devices such as mobile phones, computers, tablet devices, personal digital assistants, etc., including one or any combination of the above-mentioned memories.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.

Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present invention may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal device (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method described in the embodiments of the present invention.

The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims

1. A bias control method, the method comprising:

2. The method of claim 1, wherein said determining the amount of bias voltage adjustment at the second time for each phase modulating electrode based on the bias voltage control point at the first time for each phase modulating electrode and the first locking factor before the second time for obtaining a plurality of amounts of bias voltage adjustment at the second time for a plurality of phase modulating electrodes comprises:

3. The method of claim 2, wherein the third time and the second time are two adjacent times, and the determining the bias voltage adjustment amount of the second time corresponding to each phase modulation electrode based on the bias voltage control point of the third time and the first locking coefficient comprises:

4. The method according to any of claims 1-3, wherein the first locking factor comprises a first quadrature locking factor and a first quadrature locking factor, and wherein after the obtaining the first locking factor corresponding to each of the phase modulating electrodes, the method further comprises:

5. The method of claim 4, wherein obtaining a first quadrature locking coefficient corresponding to each of the phase modulating electrodes comprises:

6. The method according to claim 5, wherein the first output function includes a plurality of second output functions corresponding to output signals output by the modulator at a plurality of different time instants, and the integrating operation performed on the first output function and the preset orthogonal sine function to obtain a first integration result includes:

7. The method of claim 5, wherein obtaining a first homodyne lock coefficient corresponding to each of the phase modulating electrodes comprises:

acquiring a preset orthogonal cosine function;

8. The method according to claim 7, wherein the first output function includes a plurality of second output functions corresponding to output signals output by the modulator at a plurality of different time instants, and the performing an integration operation on the first output function and the preset orthogonal cosine function to obtain a third integration result includes:

9. A bias control device, comprising:

10. A modulator, characterized in that the modulator comprises: a processor, a memory, and a communication bus, comprising:

11. The modulator according to claim 10, wherein said processor executes said determining a bias voltage adjustment amount at a second time corresponding to each phase modulating electrode based on a bias voltage control point at a first time corresponding to each phase modulating electrode and said first locking factor before said second time to obtain bias voltage adjustment amounts at a plurality of second times corresponding to a plurality of phase modulating electrodes, so as to implement the following steps:

12. A storage medium storing one or more programs executable by one or more processors to implement the steps of the bias control method according to any one of claims 1 to 8.