CN110971204A - Gain stabilizing method for wireless communication receiver - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
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- H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
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Abstract
The invention provides a method and a device for stabilizing the gain of a wireless communication receiver, which designs, sets and adjusts the bias circuits of a transconductance amplifier and a mixer circuit respectively, carries out independent compensation on the transconductance amplifier, adopts combined compensation on the mixer and a transimpedance amplifier, and selects different compensation circuit structures according to the characteristics of each unit so as to reduce the fluctuation of the gain under PVT (process corner), voltage and temperature, thereby reducing the fluctuation of the total gain.
Description
Technical Field
The invention belongs to the technology of gain control of a wireless transceiver, and particularly relates to a gain stabilizing method of a wireless communication receiver.
Background
In a wireless communication system, a signal received by a receiver usually contains many interference signals, in addition to a useful signal, which come from the antenna end of the receiver after signals transmitted by other users are attenuated by a certain distance, some interference signals are modulated signals, some interference signals are single-tone signals, and the positions of the interference signals on a frequency spectrum from the useful signal are different. This requires the receiver circuitry to have a strong interference rejection capability. At present, a current mode passive frequency mixing receiver architecture is generally used, and the most important characteristic is that no large voltage swing occurs in a signal link, and only a final output end has the large voltage swing, so that the generated nonlinearity is weak, and the influence caused by interference is reduced.
However, when implementing a current-mode passive mixer receiver, it is often encountered that the link gain varies with the Process corner (Process), Voltage (Voltage) and Temperature (PVT), and the variation is usually severe. Resulting in degraded communication quality and even failure in some applications.
The current common practice is as follows:
the first scheme is as follows: the current (IPTAT) Proportional to absolute Temperature is adopted to provide reference current for each module of the receiver, the loss of partial module gain can be compensated to a certain degree by providing higher current at high Temperature, the gain is improved when some modules in a link do not increase the current, and meanwhile, the influence of voltage and a process angle is not compensated. And power consumption is also large. The compensation effect is as follows: the gain fluctuates around 5dB with PVT.
Scheme II: the bias current with zero temperature coefficient is adopted, the temperature sensor is integrated on the chip, the gain gear distribution of the receiver module is denser, the zone line of the gain fluctuating along with the temperature is obtained according to the final test result, and when the system is applied, the compensation is carried out according to different temperatures by using the digital baseband. The disadvantage is that the digital baseband matching is needed, and when the chip scale is increased, the fluctuation curves of the chip along with the temperature are probably inconsistent, so that the compensation effect is poor.
Disclosure of Invention
In view of the above, the technical problem to be solved by the present invention is to solve the gain fluctuation of the wireless communication receiver.
The invention provides a method for stabilizing the gain of a wireless communication receiver, wherein the receiver comprises a transconductance amplifier unit Gm, a Mixer unit Mixer and a transimpedance amplifier TIA, and the method comprises the following steps:
setting and adjusting a bias circuit in the transconductance amplifier unit to enable a transconductance pipe MP， MNWorking in a saturation region to enable the output current of the bias circuit to follow the change of temperature;
the bias circuit is designed to ensure that the resistance value of a transistor M1 in the bias circuit is 1/gm, Wherein g ismIs the transconductance value of transistor M1;
setting a mixing circuit in the mixer unit to shorten the on-time of a switch; setting a gate voltage VB _ MIXER of the MIXER circuit to a fixed voltage value;
the drain voltage in the mixing circuit is controlled and determined by a bias voltage VB _ TIA of the transimpedance amplifier TIA;
and selecting a proper bias voltage VB _ TIA value of the TIA to enable the TIA to work in a saturation region.
Wherein, the bias circuit in the transconductance amplifier unit is set and adjusted to make the transconductance tube MP，MNThe method works in a saturation region, so that the output current of the bias circuit is enabled to follow the change of temperature, and the method specifically comprises the following steps:
a constant transconductance current source is adopted as a bias current (I) in the transconductance amplifier unit bias circuitDC)；
Adjusting the bias circuit according to the temperature coefficient of the resistor in the process library to enable the output current of the bias circuit to follow the temperature change so as to compensate the variation of the gain of the receiver circuit along with the temperature change;
said catheter (M)P，MN) The method works in a saturation region, and specifically comprises the following steps:
selecting a bias voltage VBValue of transconductance tube M for the case of power supply voltage fluctuation within a predetermined rangeP， MNWorking in a saturation region;
setting a mixer circuit in the mixer unit to shorten the on-time of a switch, specifically:
the working mode of a mixing circuit in the mixer unit is set in an off aliasing state, so that the on-time of a switch is shortened;
selecting a proper bias voltage VB _ TIA value of the TIA to enable the TIA to work in a saturation region, specifically:
setting a gate voltage VB _ MIXER of the MIXER circuit to a fixed voltage value;
selecting a proper bias voltage VB _ TIA value of the TIA to enable the TIA to work in a saturation region under the condition that the power supply voltage fluctuates within a preset range;
the drain voltage in the mixing circuit is controlled and determined by the bias voltage VB _ TIA of the trans-impedance amplifier TIA, and the bias current I in the circuitDCIs provided by a zero temperature coefficient current source.
Preferably, the power supply voltage fluctuates by 20% up and down in the predetermined range.
Wherein the resistance value of the transistor M1 in the bias circuit is 1/gmThe method is realized by the following steps:
the source S of the transistor M1 is shorted to the gate G, which is grounded through a capacitor.
The gate voltage VB _ MIXER of the MIXER circuit is set to a fixed voltage value, and the fixed gate voltage VB _ MIXER is generated by using a resistance voltage division mode.
The invention also provides a device for stabilizing the gain of a wireless communication receiver, wherein the receiver comprises a transconductance amplifier unit Gm, a Mixer unit Mixer and a transimpedance amplifier TIA, and the device comprises:
the bias circuit is arranged in the transconductance amplifier unit and used for adjusting the output current to follow the change of the temperature according to the temperature coefficient of the resistor in the process library so as to compensate the variation of the gain of the receiver circuit along with the change of the temperature;
a constant transconductance current source arranged in the transconductance amplifier unit for providing a bias current I for the bias circuitDC；
Wherein the bias voltage V of the bias circuitBValue of transconductance tube M for the case of power supply voltage fluctuation within a predetermined rangeP，MNWorking in a saturation region; the resistance value of the transistor M1 in the bias circuit is 1/gmTo eliminate the influence of process corners, where gmIs the transconductance value of transistor M1;
the working mode of a mixing circuit in the mixer unit is set in an off aliasing state, so that the on-time of a switch is shortened;
the grid voltage VB _ MIXER of the mixing circuit is a fixed voltage value;
the bias voltage VB _ TIA value of the trans-impedance amplifier TIA enables the trans-impedance amplifier TIA to work in a saturation region under the condition that the power supply voltage fluctuates within a preset range;
zero temperature coefficient current source for providing bias current I in transimpedance amplifier TIADC(ii) a The drain voltage in the mixing circuit is controlled and determined by the bias voltage VB _ TIA of the trans-impedance amplifier TIA.
The power supply voltage fluctuates up and down by 20% in a predetermined range.
Wherein the resistance value of the transistor M1 in the bias circuit is 1/gmThe method is realized by the following steps:
the source S of the transistor M1 is shorted to the gate G, which is grounded through a capacitor.
Preferably, the fixed voltage value of the gate voltage VB _ MIXER of the MIXER circuit is generated by dividing a voltage by resistors. In summary, the present invention provides a method for designing, setting and adjusting bias circuits of a transconductance amplifier and a mixer circuit, individually compensating the transconductance amplifier, jointly compensating the mixer and a transimpedance amplifier, and selecting different compensation circuit structures according to the characteristics of respective units, so as to reduce the fluctuation of respective gains under PVT, i.e., process corner, voltage and temperature, thereby reducing the total gain fluctuation.
For the purposes of the foregoing and related ends, the one or more embodiments include the features hereinafter fully described and particularly pointed out in the claims. The following description and the annexed drawings set forth in detail certain illustrative aspects and are indicative of but a few of the various ways in which the principles of the various embodiments may be employed. Other benefits and novel features will become apparent from the following detailed description when considered in conjunction with the drawings and the disclosed embodiments are intended to include all such aspects and their equivalents.
Drawings
Fig. 1 is an architecture schematic of a current-mode passive mixing receiver;
fig. 2 is a flow chart of a method for stabilizing gain of a wireless communication receiver according to an embodiment of the present invention;
fig. 3a and fig. 3b are schematic diagrams of an amplifier circuit and a bias circuit in a transconductance amplifier unit according to the present invention, respectively;
fig. 4 is a schematic diagram of the architecture of a mixer unit and a TIA unit of a transimpedance amplifier provided in the present invention;
fig. 5 is a schematic diagram of a bias circuit of a mixer unit and a TIA unit of a transimpedance amplifier according to the present invention.
Detailed Description
The following description and the drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others. The scope of the embodiments of the invention encompasses the full ambit of the claims, as well as all available equivalents of the claims. These embodiments of the invention may be referred to herein, individually or collectively, by the term "invention" merely for convenience and without intending to voluntarily limit the scope of this application to any single invention or inventive concept if more than one is in fact disclosed.
The architecture of a typical current-mode passive mixer receiver is shown in fig. 1.
The receiver 100 includes a transconductance Amplifier unit (Gm)10, a Mixer unit (Mixer)20, and a Trans-Impedance Amplifier (TIA) unit 30.
The transconductance amplifier unit Gm is a voltage-to-current circuit, the Mixer is a Mixer, and the transimpedance amplifier TIA is a current-to-voltage circuit, i.e., an output circuit. The link gain is the product of the gains of the three units. The idea of realizing gain compensation is as follows: independent compensation is carried out on Gm, combined compensation is carried out on Mixer + TIA, different compensation circuit structures are selected according to the characteristics of respective units, and the fluctuation of respective gains under PVT (Process), namely Process angle (Process), Voltage (Voltage) and Temperature (Temperature) is reduced, so that the fluctuation of the total gain is reduced.
As shown in fig. 2, an embodiment of the present invention provides a method for stabilizing a gain of a wireless communication receiver, including the following steps:
(A) setting and adjusting a bias circuit in the transconductance amplifier unit to cause a transconductance tube (M)P，MN) Working in a saturation region to enable the output current of the bias circuit to follow the change of temperature;
(B) the bias circuit is designed so that the resistance value of the transistor (M1) in the bias circuit is 1/gmWherein g ismIs the transconductance value of the transistor (M1);
(C) setting a mixing circuit in the mixer unit to shorten the on-time of a switch so as to reduce the variation value of on-resistance caused by a process angle, voltage and temperature; setting a gate voltage (VB _ MIXER) of the MIXER circuit to a fixed voltage value;
(D) the drain voltage in the mixing circuit is controlled and determined by the bias voltage (VB _ TIA) of the trans-impedance amplifier (TIA);
(E) selecting a proper bias voltage (VB _ TIA) value of a trans-impedance amplifier (TIA) to enable the trans-impedance amplifier (TIA) to work in a saturation region.
It should be noted that, the above steps (a), (B), (C), (D) and (E) are arranged in order for convenience of description, and the order is not sequential in specific implementation.
The setting and adjusting steps are as follows:
a) constant transconductance current source is adopted as bias current (I) in transconductance amplifier unit bias circuitDC)；
b) Adjusting the bias circuit according to the temperature coefficient of the resistor in the process library to enable the output current of the bias circuit to follow the temperature change so as to compensate the variation of the gain of the receiver circuit along with the temperature change;
c) selecting a bias voltage VBValue of transconductance tube (M) in case of fluctuation of power supply voltage within a predetermined rangeP，MN) Working in a saturation region;
generally, the fluctuation range of the power supply voltage is determined to be ± 20% at the time of implementation.
d) The resistance value of the transistor M1 in the bias circuit is 1/gmTo eliminate the influence of process corners, where gmIs the transconductance value of transistor M1;
the resistance value of the transistor M1 is 1/gmThe method is realized by the following steps:
as shown, in the bias circuit therein, the source S of the transistor M1 is shorted to the gate G, which is grounded through a capacitor.
e) The working mode of a mixing circuit in the mixer unit is set in an off-aliasing state, so that the on-time of a switch is shortened, and the change of the on-resistance caused by PVT (Process corner), Voltage (Voltage) and Temperature (Temperature) is reduced;
f) setting a gate voltage VB _ MIXER of the MIXER circuit to a fixed voltage value;
specifically, the fixed gate voltage VB _ MIXER can be generated by means of resistance voltage division. Or otherwise obtain a fixed voltage.
g) Selecting a proper bias voltage VB _ TIA value of the TIA to enable the TIA to work in a saturation region under the condition that the power supply voltage fluctuates within a preset range;
h) the drain voltage in the mixing circuit is controlled and determined by the bias voltage VB _ TIA of the trans-impedance amplifier TIA, and the bias current I in the circuitDCIs provided by a zero temperature coefficient current source.
The execution sequence of the steps a) to h) is not sequential, and the steps are carried out according to specific conditions.
In order to make the principles, features and advantages of the present invention clearer, the following detailed description of the steps is given.
Compensation in transconductance amplifier cell Gm
The main role of the GM block is to convert voltage to current, in which the gain depends on the transconductance transistor (M)P，MN) Bias and negativeAnd (4) loading. In the circuit design process, in order to improve the gain of the module, a resonant network of an inductor and a capacitor is generally used at a load end, which brings about the problems of increased area and increased fluctuation along with a process angle, wherein the inductor brings about the expense of the area, and the capacitor has larger fluctuation along with the process angle, which causes larger deviation of the resonant frequency of the resonant network, thereby having larger gain fluctuation. Based on this, the output impedance of the transistor itself is selected as the load. I.e. using an inverter type amplifier as the basic architecture of the transconductance amplifier GM module, as shown in fig. 3a, to the right is its biasing circuit. Wherein (M)P，MN) Is a core component of an inverter type amplifying circuit. VBIs the voltage generated by the bias circuit. The gain of which depends only on the transconductance tube (M)P，MN) The selection of the operating state is critical, i.e. VBThe value of (c) is critical. It is usually chosen to operate in the saturation region. The gain expression of the transconductance amplifier GM is:
wherein munIs the velocity of the carrier, CoxIs the thickness of the gate oxide layer, W/L is the ratio of the width to the length of the transistor, IDIs a quiescent current, VBIs the voltage difference between the gate and the source of the transistor, VthIs the threshold voltage.
In general VthIs a negative temperature coefficient, i.e. as the temperature increases, VthIs reduced.
The idea of compensation is as follows: the denominator in the expression is increased, and the numerator is required to be increased correspondingly, so as to ensure that the gain value of the formula (1) is unchanged.
The specific implementation steps are as follows:
selecting a constant transconductance current source as its bias current, i.e. I in FIG. 3bDC。
According to the temperature coefficient of the resistor in the process library, the constant transconductance current source biasing circuit is adjusted to enable the output current of the constant transconductance current source biasing circuit to follow the change of the temperature, when the temperature rises, the resistance value is reduced, the proportion of the biasing current and the resistor needs to be adjusted, the output current of the constant transconductance current source is increased, and therefore the circuit gain of the receiver can be compensated to follow the change of the temperature.
Selection of VBValue, let cross catheter (M)P，MN) Under the condition that the power supply voltage fluctuates by 20%, the power supply still works in a saturation region, so that the influence of the fluctuation of the power supply on the gain is reduced.
Aiming at the influence of a process corner, the bias circuit adopts a circuit as shown in figure 3b, and the connection mode of M1 ensures that the resistance value is 1/gm. When the process angle is fast, IDCIncreasing and the resistance of M1 decreasing, both values being designed such that V isBDecrease; and V of the receiver circuitthIs reduced so that the denominator remains substantially constant, reducing the fluctuation of the gain. Similarly, when the process angle is slow, the process is reversed, but the scoring mother is kept unchanged.
(II) Compensation in Mixer cells and transimpedance Amplifier TIA cells
Scheme (i):
the selective mixer circuit operates in an off-alias state to reduce the on-time of the switch, thereby reducing PVT, i.e., variations in on-resistance due to process corner (process), voltage (voltage), and temperature (temperature).
The fixed gate voltage VB _ MIXER is generated by means of resistance voltage division, as shown in FIG. 4
And selecting a proper VB _ TIA value to ensure that the TIA still works in a saturation region under the condition that the power supply voltage is within a preset fluctuation range (such as +/-20 percent), thereby reducing the influence caused by the power supply.
The drain voltage control of the mixer is determined by VB _ TIA of TIA, the structure of the bias circuit is shown in FIG. 4, and I in the circuitDCProvided by a current source with zero temperature coefficient, M in the bias circuitBResistance of (d) with μnIncrease sum of VthThe drop is a drop so that the bias voltage VB TIA drops, reducing the effect from process corner and temperature.
Scheme (II):
the differences from scheme (I) are: the bias current of the TIA can also be provided by a constant transconductance circuit, the principle is the same as that of a transconductance amplifier unit Gm, only a constant transconductance current source circuit needs to be matched with an M1 resistor, the constant transconductance current source needs to be redesigned, and a zero-temperature coefficient current source can be obtained from a band gap reference source on the system and does not need to be independently made.
The mixer adopts a passive structure for linearity, as shown in fig. 4, its role in the receiver chain is to convert the radio frequency current generated by the GM module to the intermediate frequency current, and in the passive current mode receiver architecture, it is actually a switch, and the source voltage of M5/M6 is determined by VB _ TIA of the latter circuit TIA, and the drain and GM module are connected by a dc blocking capacitor, i.e. capacitor C in fig. 4. After the switch is turned on, its voltage and source voltage are equal because no dc current flows. Therefore, only the gate voltage remains to be controllable. The value of VB _ MIXER determines the value of the gate voltage of the switch. According to V of MOS tubeGSAnd a threshold voltage VthBy comparison, the working state of the passive mixer is divided into a turn-on aliasing VGS＞VthAnd cut-off aliasing VGS＜VthThe two states respectively correspond to different directions of link performance optimization, the noise is poor when the aliasing is conducted, the linearity is good, and the aliasing stopping is just opposite. From the angle of gain, turn-on aliasing gain is poor, and turn-off aliasing gain is good.
Assuming that the local oscillator input of the mixer is ideal, the on-resistance is considered infinite when it is turned off, and it has small fluctuation with temperature, process angle and power supply. The fluctuation of the gain after switching on mainly depends on the variation of the on-resistance of the M5(M6) tube:
when the temperature is raised and the process angle is fast, μnIncrease and Vth drop, requiring VGS－VDS＝ VGDDecrease, and when the temperature is decreased and the process angle is slow, munLower and Vth higher, requiring VGS－VDS＝VGDAnd (4) rising. Selecting a fixed VGChanging only VDAnd (4) finishing.
The embodiment of the invention provides a device for stabilizing the gain of a wireless communication receiver, wherein the receiver comprises a transconductance amplifier unit (Gm), a Mixer unit (Mixer) and a transimpedance amplifier (TIA), and the device comprises:
the bias circuit is arranged in the transconductance amplifier unit and used for adjusting the output current to follow the change of the temperature according to the temperature coefficient of the resistor in the process library so as to compensate the variation of the gain of the receiver circuit along with the change of the temperature;
a constant transconductance current source arranged in the transconductance amplifier unit for providing a bias current (I) to the bias circuitDC)；
Wherein the bias voltage V of the bias circuitBValue such that the supply voltage fluctuates within a predetermined range across the conduit (M)P，MN) Working in a saturation region; the resistance value of the transistor M1 in the bias circuit is 1/gmTo eliminate the influence of process corners, where gmIs the transconductance value of transistor M1;
the working mode of a mixing circuit in the mixer unit is set in an off aliasing state, so that the on-time of a switch is shortened;
the grid voltage VB _ MIXER of the mixing circuit is a fixed voltage value;
the bias voltage VB _ TIA value of the trans-impedance amplifier TIA enables the trans-impedance amplifier TIA to work in a saturation region under the condition that the power supply voltage fluctuates within a preset range;
zero temperature coefficient current source for providing bias current I in transimpedance amplifier TIADC(ii) a The drain voltage in the mixing circuit is controlled and determined by the bias voltage VB _ TIA of the trans-impedance amplifier TIA.
In particular, the power supply voltage fluctuates up and down by 20% within a predetermined range.
The resistance value of the transistor M1 in the bias circuit is 1/gmThe method is realized by the following steps:
the source S of the transistor M1 is shorted to the gate G, which is grounded through a capacitor.
The fixed voltage value of the gate voltage VB _ MIXER of the MIXER circuit is generated by means of resistance voltage division.
Compared with the scheme in the prior art, the invention has the following advantages:
according to the technical scheme provided by the invention, specific compensation technologies are selected according to specific circuit structures, so that the specific compensation technologies respectively achieve better gain stability, and the overall gain is more stable.
The constant transconductance current source is adopted as a bias circuit for the inverter type Gm circuit, so that the gain can be effectively stabilized; the mutual matching scheme of the gain compensation of the frequency mixer and the TIA is simple and easy to realize.
Those of skill in the art will understand that the various exemplary method steps and apparatus elements described in connection with the embodiments disclosed herein can be implemented as electronic hardware, software, or combinations of both. Various illustrative steps and elements have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The disclosed embodiments are provided to enable those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the scope or spirit of the invention. The above-described embodiments are merely exemplary embodiments of the present invention, which should not be construed as limiting the invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A method for stabilizing the gain of a wireless communication receiver, the receiver comprising a transconductance amplifier unit (Gm), a Mixer unit (Mixer), a transimpedance amplifier (TIA), the method comprising:
setting and adjusting a bias circuit in the transconductance amplifier unit to cause a transconductance tube (M)P，MN) Working in a saturation region to enable the output current of the bias circuit to follow the change of temperature;
the bias circuit is designed so that the resistance of the transistor (M1) in the bias circuit is 1/gmWherein g ismIs the transconductance value of the transistor (M1);
setting a mixing circuit in the mixer unit to shorten the on-time of a switch; setting a gate voltage (VB _ MIXER) of the MIXER circuit to a fixed voltage value;
the drain voltage in the mixing circuit is controlled and determined by the bias voltage (VB _ TIA) of the trans-impedance amplifier (TIA);
selecting a proper bias voltage (VB _ TIA) value of a trans-impedance amplifier (TIA) to enable the trans-impedance amplifier (TIA) to work in a saturation region.
2. A method as claimed in claim 1, characterized by setting, adjusting the bias circuit in the transconductance amplifier cell so that the transconductance amplifier cell (M) is connected to the transconductance amplifier cellP，MN) The method works in a saturation region, so that the output current of the bias circuit is enabled to follow the change of temperature, and the method specifically comprises the following steps:
a constant transconductance current source is adopted as a bias current (I) in the transconductance amplifier unit bias circuitDC)；
Adjusting the bias circuit according to the temperature coefficient of the resistor in the process library to enable the output current of the bias circuit to follow the temperature change so as to compensate the variation of the gain of the receiver circuit along with the temperature change; and/or
Said catheter (M)P，MN) The method works in a saturation region, and specifically comprises the following steps:
selecting a bias voltage VBValue such that the supply voltage fluctuates within a predetermined range across the conduit (M)P，MN) Working in a saturation region;
setting a mixer circuit in the mixer unit to shorten the on-time of a switch, specifically:
the working mode of a mixing circuit in the mixer unit is set in an off aliasing state, so that the on-time of a switch is shortened; and/or
Selecting a proper bias voltage (VB _ TIA) value of the transimpedance amplifier (TIA) to enable the transimpedance amplifier (TIA) to work in a saturation region, specifically:
setting a gate voltage VB _ MIXER of the MIXER circuit to a fixed voltage value;
selecting a proper bias voltage VB _ TIA value of the TIA to enable the TIA to work in a saturation region under the condition that the power supply voltage fluctuates within a preset range;
the drain voltage in the mixing circuit is controlled and determined by the bias voltage VB _ TIA of the trans-impedance amplifier TIA, and the bias current I in the circuitDCIs provided by a zero temperature coefficient current source.
3. The method of claim 1, wherein the power supply voltage fluctuates by 20% up and down over the predetermined range.
4. The method of claim 1, wherein the transistor M1 in the bias circuit is made to have a resistance of 1/gmThe method is realized by the following steps:
the source S of the transistor M1 is shorted to the gate G, which is grounded through a capacitor.
5. The method of claim 1, wherein the setting of the gate voltage VB _ MIXER of the MIXER circuit to a fixed voltage value is performed by using a resistor-divided manner to generate the fixed gate voltage VB _ MIXER.
6. An arrangement for stabilizing the gain of a wireless communication receiver, the receiver comprising a transconductance amplifier unit (Gm), a Mixer unit (Mixer), a transimpedance amplifier (TIA), characterized in that the arrangement comprises:
the bias circuit is arranged in the transconductance amplifier unit and used for adjusting the output current to follow the change of the temperature according to the temperature coefficient of the resistor in the process library so as to compensate the variation of the gain of the receiver circuit along with the change of the temperature;
a constant transconductance current source arranged in the transconductance amplifier unit for providing a bias current (I) to the bias circuitDC)；
Wherein the bias voltage V of the bias circuitBValue such that the supply voltage fluctuates within a predetermined range across the conduit (M)P，MN) Working in a saturation region; the resistance value of the transistor (M1) in the bias circuit is 1/gmTo eliminate the influence of process corners, where gmIs the transconductance value of the transistor (M1);
the working mode of a mixing circuit in the mixer unit is set in an off aliasing state, so that the on-time of a switch is shortened;
the grid voltage VB _ MIXER of the mixing circuit is a fixed voltage value;
the bias voltage VB _ TIA value of the trans-impedance amplifier TIA enables the trans-impedance amplifier (TIA) to work in a saturation region under the condition that the power supply voltage fluctuates in a preset range;
zero temperature coefficient current source for providing a bias current I in a transimpedance amplifier (TIA)DC(ii) a The drain voltage in the mixer circuit is controlled and determined by the bias voltage VB _ TIA of the trans-impedance amplifier (TIA).
7. The apparatus of claim 6, wherein the power supply voltage fluctuates by 20% up and down within the predetermined range.
8. The apparatus of claim 6, wherein the transistor M1 in the bias circuit is made to have a resistance of 1/gmThe method is realized by the following steps:
the source S of the transistor M1 is shorted to the gate G, which is grounded through a capacitor.
9. The apparatus of claim 6, wherein the fixed voltage value of the gate voltage VB _ MIXER of the MIXER circuit is generated by dividing a voltage by resistors.
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