CN110970566A - Core-shell nano material, preparation method thereof and quantum dot light-emitting diode - Google Patents

Core-shell nano material, preparation method thereof and quantum dot light-emitting diode Download PDF

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CN110970566A
CN110970566A CN201811149696.9A CN201811149696A CN110970566A CN 110970566 A CN110970566 A CN 110970566A CN 201811149696 A CN201811149696 A CN 201811149696A CN 110970566 A CN110970566 A CN 110970566A
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core
shell
tio
tin
quantum dot
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何斯纳
吴龙佳
吴劲衡
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TCL Corp
TCL Research America Inc
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TCL Research America Inc
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Abstract

The invention belongs to the technical field of nano materials, and particularly relates to a core-shell nano material, a preparation method thereof and a quantum dot light-emitting diode. The core-shell nano material comprises TiO2Nanoparticle core and cladding on the TiO2SnO on nanoparticle core surface2And (4) shell layer. The core-shell nano material is used as an electron transport material, so that the stability is good, and the radiation combination of electron hole pairs can be reduced, thereby improving the electron transport performance and enhancing the luminous efficiency of devices.

Description

Core-shell nano material, preparation method thereof and quantum dot light-emitting diode
Technical Field
The invention belongs to the technical field of nano materials, and particularly relates to a core-shell nano material, a preparation method thereof and a quantum dot light-emitting diode.
Background
TiO2The material is a widely used multifunctional material, has a wide forbidden band of 3.2eV, has unique optical, electrical and physical properties and excellent chemical stability, can resist electrochemical corrosion of a medium, and is widely applied to the fields of coatings, cosmetics, semiconductors, sensors, dielectric materials, catalysts and the like. In addition, TiO2Can also be widely used as functional materials for photochemical and optoelectronic devices such as anode catalytic decomposition water, solar cells and the like. On the other hand, tin oxide (SnO)2) MakingThe metal oxide is cheaper and more stable, is widely applied to the fields of electrode materials, gas-sensitive materials, super capacitors and the like, and can be prepared in industry at low cost and in a large area.
Titanium oxide is a direct bandgap semiconductor and has a wide band gap of 3.2eV, while tin oxide has a band gap of about 3.5 eV. Both are important semiconductor materials and have wide application in the fields of photocatalysis, photoelectric conversion and the like. At present, the existing electron transport materials are of few types, and particularly, the application of the existing electron transport materials in the aspect of QLEDs is limited.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a core-shell nano material, a preparation method thereof and a quantum dot light-emitting diode, and aims to solve the technical problem of providing more choices for the existing electron transport materials.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a core-shell nano material, which comprises TiO2Nanoparticle core and cladding on the TiO2SnO on nanoparticle core surface2And (4) shell layer.
In the core-shell nano material provided by the invention, SnO is used2Coated in TiO2SnO formation on the surface of nanoparticle cores2Shell of SnO2Is a cheap and stable metal oxide, SnO2Has a forbidden band width (3.5eV) in comparison with TiO2Has a wider band gap (3.2eV), and therefore, it is possible to obtain a high-purity SnO having a relatively wide band gap2With shell coating TiO with relatively narrow band gap2Core-shell nanomaterials with nanoparticle cores (i.e., TiO)2/SnO2Core-shell nano material), the stability of the core-shell nano material can be improved, and the transmission of electrons is facilitated; at the same time, TiO2The surface of the nanoparticles generally has oxygen vacancies, while SnO2With a shell layer coated with TiO2The nanoparticle core can fill the TiO2Resulting in a reduction of oxygen vacancies, thus lowering TiO2Oxygen defect formation of the nanoparticles; the core-shell nano material is used as an electron transport material, so that the stability is good, and the radiation combination of electron hole pairs can be reduced, thereby improving the electron transport performance and enhancing the luminous efficiency of devices.
The invention also provides a preparation method of the core-shell nano material, which comprises the following steps:
providing TiO2Nanoparticles and tin salts;
subjecting the TiO to a reaction2Dissolving the nano particles and tin salt in a solvent, and heating under an alkaline condition to obtain a precursor solution;
and annealing the precursor solution to obtain the core-shell nano material.
In the preparation method of the core-shell nano material provided by the invention, TiO is added2Dissolving the nano particles and tin salt in a solvent, heating under an alkaline condition to prepare a precursor solution, and then annealing to obtain the TiO precursor solution2Nanoparticle core and cladding on TiO2SnO on nanoparticle core surface2A core-shell material consisting of shell layers; the preparation method is a simple sol-gel method, the preparation method is simple and feasible, the preparation method is suitable for large-area and large-scale preparation, and the finally prepared shell nano material not only improves the electron transmission performance, but also has better stability, and can enhance the luminous efficiency of devices when being used for quantum dot light-emitting diodes.
Finally, the invention also provides a quantum dot light-emitting diode which comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electron transmission layer is also arranged between the cathode and the quantum dot light-emitting layer, and the electron transmission layer is made of the core-shell nano material.
The electron transport layer in the quantum dot light-emitting diode provided by the invention is composed of the special core-shell nano material, the core-shell material has better electron transport performance and stability, and can effectively prevent holes from being transported to a cathode from the quantum dot light-emitting layer, so that the electron and hole recombination efficiency of the quantum dot light-emitting layer is improved, and the light-emitting efficiency and the display performance of a device are enhanced.
Drawings
Fig. 1 is a schematic structural diagram of a QLED device in embodiment 4 of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In one aspect, an embodiment of the present invention provides a core-shell nanomaterial, where the core-shell nanomaterial includes TiO2Nanoparticle core and cladding on the TiO2SnO on nanoparticle core surface2And (4) shell layer.
In the core-shell nano material provided by the embodiment of the invention, SnO is used2Coated in TiO2SnO formation on the surface of nanoparticle cores2Shell of SnO2Is a cheap and stable metal oxide, SnO2Has a forbidden band width (3.5eV) in comparison with TiO2Has a wider band gap (3.2eV), and therefore, it is possible to obtain a high-purity SnO having a relatively wide band gap2With shell coating TiO with relatively narrow band gap2Core-shell nanomaterials with nanoparticle cores (i.e., TiO)2/SnO2Core-shell nano material), the stability of the core-shell nano material can be improved, and the transmission of electrons is facilitated; at the same time, TiO2The surface of the nanoparticles generally has oxygen vacancies, while SnO2With a shell layer coated with TiO2The nanoparticle core can fill the TiO2Resulting in a reduction of oxygen vacancies, thus lowering TiO2Oxygen defect formation of the nanoparticles; the core-shell nano material is used as an electron transport material, so that the stability is good, and the radiation combination of electron hole pairs can be reduced, thereby improving the electron transport performance and enhancing the luminous efficiency of devices.
Further, in the core-shell nanomaterial of the present invention, the molar ratio of Ti element to Sn element is 1: (0.05-0.1). In this molar ratio range, SnO2Coated in TiO2The surface of the nanoparticle core can be formed into SnO2The shell layer does not influence TiO2Under the condition of nano-particle nuclear inner crystal lattice, the electronic transmission performance is improved, and SnO can be prevented2The shell layer is too thick to be beneficial to the efficiency of the electron transport layer.
Further, the core-shell nano material provided by the embodiment of the invention is used as an electron transport layer material of a quantum dot light-emitting diode.
On the other hand, the embodiment of the invention provides a preparation method of a core-shell nano material, which comprises the following steps:
s01: providing TiO2Nanoparticles and tin salts;
s02: subjecting the TiO to a reaction2Dissolving the nano particles and tin salt in a solvent, and heating under an alkaline condition to obtain a precursor solution;
s03: and annealing the precursor solution to obtain the core-shell nano material.
In the preparation method of the core-shell nano material provided by the embodiment of the invention, TiO is added2Dissolving the nano particles and tin salt in a solvent, heating under an alkaline condition to prepare a precursor solution, and then annealing to obtain the TiO precursor solution2Nanoparticle core and cladding on TiO2SnO on nanoparticle core surface2A core-shell material consisting of shell layers; the preparation method is a simple sol-gel method, the preparation method is simple and feasible, the preparation method is suitable for large-area and large-scale preparation, and the finally prepared shell nano material not only improves the electron transmission performance, but also has better stability, and can enhance the luminous efficiency of devices when being used for quantum dot light-emitting diodes.
Further, in the above step S01, the tin salt is a soluble inorganic tin salt or organic tin salt, and specific addresses include, but are not limited to, at least one of tin nitrate, tin chloride, tin sulfate, tin methane sulfonate, tin ethane sulfonate, and tin propane sulfonate. And for TiO2Nanoparticles, which can be obtained by dissolving a titanium salt in a solvent and performing heat treatment under an alkaline condition (preferably, the temperature of the heat treatment is 60-90 ℃); in particular, titanium salts withReacting with alkali liquor to generate titanium hydroxide (T (OH)4)，Ti(OH)4Polycondensation reaction and dehydration to produce TiO2Nucleation particles; preferably, the pH of the lye is 12-13 and the molar ratio of hydroxide ions to titanium ions in the solution is (3.5-4.5): 1, when the molar ratio of hydroxide ions to titanium ions is less than 3.5: excess of titanium salt, less lye, Ti (OH)4Not all condensation polymerization takes place, with Ti (OH)4The rest is obtained; and greater than 4.5: 1, too high a pH results in a slower polycondensation rate in the system. Thus, at a pH of 12 to 13, the molar ratio of hydroxide ions to titanium ions is maintained at (3.5 to 4.5): 1, so that TiO with uniform particles is obtained subsequently2And (4) nucleation particles. After the titanium salt is dissolved in the solvent, the concentration of the titanium salt is 0.2M-1M (mol/L). Further, the titanium salt is not limited to titanium nitrate, titanium chloride, titanium sulfate, titanium bromide, etc.; the solvent is isopropanol, ethanol, propanol, butanol, methanol, etc., but is not limited thereto; the alkali solution is at least one selected from sodium hydroxide solution, potassium hydroxide solution, lithium hydroxide solution, ammonia water, ethanolamine solution, ethylene glycol solution, diethanolamine solution, triethanolamine solution, ethylenediamine solution and tetramethylammonium hydroxide solution.
In order to make subsequent SnO2In TiO2Uniform SnO is formed on the surface of nano particles2A shell layer, in which, after titanium salt is dissolved in a solvent and is heated under an alkaline condition, a precipitator can be further added to directly dissolve TiO2The nanoparticles are precipitated out of solution to remove excess non-formed TiO2To obtain pure TiO2The core-shell nano material with more uniform inner core and shell and better performance can be formed by the nano particles. Preferably, the above precipitant is a weakly polar and non-polar solvent such as ethyl acetate, heptane, octane, etc., without being limited thereto.
Further, in the above step S02, TiO2Dissolving the nano particles and tin salt in a solvent, and heating under an alkaline condition to obtain a uniform precursor solution, wherein the preferable heating temperature is 60-90 ℃. The solvent in this step is selected from the group consisting of isopropanol, ethanol, propanol, butanol and methanolThe pH of the alkaline condition in this step is 12 to 13, and specifically the pH of the alkaline condition is provided by a basic solution selected from at least one of a sodium hydroxide solution, a potassium hydroxide solution, a lithium hydroxide solution, ammonia water, an ethanolamine solution, an ethylene glycol solution, a diethanolamine solution, a triethanolamine solution, an ethylenediamine solution, and a tetramethylammonium hydroxide solution. In this step, the tin salt reacts with the alkali solution to form tin hydroxide (Sn (OH)4)，Sn(OH)4Condensation polymerization reaction is carried out, and dehydration is carried out on TiO2SnO is generated on the surface of the nuclear crystal particles2And (4) shell layer. If the molar ratio of hydroxide ions to tin salts is kept to be 4: 1, SnO can be generated2Shell layer, therefore, the preferred molar ratio of hydroxide ions to tin ions is (3.5-4.5): 1. when the molar ratio of the alkali liquor to the metal salt is less than 3.5: 1, the generation of tin hydroxide is insufficient due to less hydroxide ions; greater than 4.5: 1, too high a pH results in a slower polycondensation rate in the system. Maintaining the molar ratio of hydroxide ions to tin ions at a pH of 12-13 of (3.5-4.5): 1, compact and evenly distributed TiO can be finally obtained2/SnO2A core-shell nano material.
Further, according to the molar ratio of Ti element to Sn element of 1: (0.05-0.1), mixing the TiO with water2The nanoparticles and tin salt are dissolved in a solvent. Mixing titanium: the molar ratio of tin is controlled to be 1: (0.05-0.1) because SnO inhibits oxidation when the amount of tin added is less than 5% (i.e., the molar ratio of titanium to tin exceeds the lower line 1: 0.05)2Not homogeneously in TiO2The intermediate surface forms a shell layer, or the coverage of the shell layer is insufficient. When the addition of tin is more than 10%, the molar ratio of titanium to tin exceeds the upper line 1: 0.1), SnO2At Ti (OH)4The thickness of the shell layer on the surface of the crystal grain is larger and larger, and the nano TiO2The component ratio of (a) is reduced, and the electron transport property is lowered.
Further, in step S03, the temperature of the annealing treatment is 300-350 ℃.
Finally, the embodiment of the invention also provides a quantum dot light-emitting diode, which comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electronic transmission layer is also arranged between the cathode and the quantum dot light-emitting layer, and the material of the electronic transmission layer is the core-shell nano material in the embodiment of the invention.
The electron transport layer in the quantum dot light-emitting diode provided by the embodiment of the invention is composed of the core-shell nano material special for the embodiment of the invention, the core-shell material has better electron transport performance and stability, and can effectively prevent holes from being transported from the quantum dot light-emitting layer to the cathode, so that the electron and hole recombination efficiency of the quantum dot light-emitting layer is improved, and the light-emitting efficiency and the display performance of the device are enhanced.
In a preferred embodiment, a TiO is prepared2/SnO2The quantum dot light-emitting diode of the electron transmission layer formed by the nuclear shell nanometer material comprises the following steps:
a: firstly, growing a hole transport layer on an anode substrate;
b: then depositing a quantum dot light-emitting layer on the hole transport layer;
c: and finally, depositing an electron transmission layer on the quantum dot light-emitting layer, and evaporating a cathode on the electron transmission layer to obtain the light-emitting diode. Wherein the material of the electron transport layer is the TiO2/SnO2A core-shell nano material.
The anode substrate (ITO) needs to be subjected to a pretreatment process. The basic specific processing steps include: cleaning the whole piece of ITO conductive glass with a cleaning agent to primarily remove stains on the surface, then sequentially carrying out ultrasonic cleaning in deionized water, acetone, absolute ethyl alcohol and deionized water for 20min respectively to remove impurities on the surface, and finally blowing dry with high-purity nitrogen to obtain the ITO anode.
The hole transport layer according to the embodiments of the present invention may be made of a hole transport material that is conventional in the art, including but not limited to TFB, PVK, Poly-TPD, TCTA, PEDOT: PSS, CBP, etc., or any combination thereof, as well as other high performance hole transport materials. Hole transport layer: placing the ITO substrate on a spin coater, and spin-coating a prepared solution of a hole transport material to form a film; the film thickness is controlled by adjusting the concentration of the solution, the spin-coating speed and the spin-coating time, and then a thermal annealing process is performed at an appropriate temperature.
The preparation method of the light-emitting diode is characterized in that the quantum dots of the quantum dot light-emitting layer are one of red, green and blue. Can be at least one of CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, CuInS, CuInSe and various core-shell structure quantum dots or alloy structure quantum dots. Then the quantum dots can be any one of the three common red, green and blue quantum dots or other yellow light, and the quantum dots can be cadmium-containing or cadmium-free. The quantum dot light emitting layer of the material has the characteristics of wide and continuous excitation spectrum distribution, high emission spectrum stability and the like. Preparation of a light-emitting layer: spin-coating the prepared luminescent material solution with a certain concentration on a spin coater of a substrate with a spin-coated hole transport layer to form a film, controlling the thickness of the luminescent layer to be about 20-60nm by adjusting the concentration of the solution, the spin-coating speed and the spin-coating time, and drying at a proper temperature.
The electron transport layer is TiO of the embodiment of the invention2/SnO2Core-shell nanomaterial films: the substrate which is coated with the quantum dot luminescent layer by spin coating is placed on a spin coater, a precursor solution with a certain concentration is prepared to form a film by spin coating, the thickness of the electron transport layer is controlled by adjusting the concentration of the solution, the spin coating speed (preferably, the rotation speed is between 2000 and 6000 rpm) and the spin coating time to be about 20-60nm, and then the film is formed by annealing at the temperature of 300-350 ℃ (such as 320 ℃). The step can be annealing in air or in nitrogen atmosphere, and the annealing atmosphere is selected according to actual needs.
And then, the substrate deposited with the functional layers is placed in an evaporation bin, and a layer of 15-30nm metal silver or aluminum is thermally evaporated through a mask plate to serve as a cathode, or a nano Ag wire or a Cu wire is used, so that a carrier can be smoothly injected due to the small resistance.
Further, the obtained QLED is subjected to a packaging process, and the packaging process may be performed by a common machine or by a manual method. Preferably, the oxygen content and the water content in the packaging treatment environment are both lower than 0.1ppm so as to ensure the stability of the device.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
The details of TiO are described by taking titanium acetate, tin sulfate, ethanol, potassium hydroxide and ethyl acetate as examples2/SnO2A preparation method of a core-shell nano material.
(1) An appropriate amount of titanium acetate was first added to 50ml of ethanol to form a solution having a total concentration of 0.5M. Then stirring at 70 deg.C to dissolve, adding alkaline solution (molar ratio, OH) of potassium hydroxide dissolved in 10ml ethanol-：Ti4+4: 1, pH 12-13). Stirring was continued at 70 ℃ for 4h to give a homogeneous, clear solution. Then, after the solution is cooled, ethyl acetate is used for precipitation, after centrifugation, a small amount of ethanol is used for dissolution (repeated operation and 3 times of washing), and TiO is prepared2And (3) nanoparticles.
(2) Adding TiO into the mixture2Nanoparticles and appropriate amount of tin sulfate were added to 30ml of ethanol to form a solution with a total concentration of 5M, wherein titanium: the molar ratio of tin is 1: 0.5. then dissolved by stirring at 70 ℃, and added with alkali solution (molar ratio, OH) of potassium hydroxide dissolved in 5ml of ethanol-：Sn4+4: 1, pH 12-13). Stirring was continued at 70 ℃ for 4h to give a homogeneous, clear solution.
(3) Subsequently, after the solution was cooled, it was spin coated on the treated substrate using a spin coater and annealed at 350 ℃.
Example 2
Details of TiO are given by taking titanium nitrate, tin nitrate, methanol, ethanolamine, heptane as examples2/SnO2A preparation method of a core-shell nano material.
(1) An appropriate amount of titanium nitrate was first added to 50ml of methanol to form a solution having a total concentration of 0.5M. Then dissolved by stirring at 60 ℃, and then alkaline solution (molar ratio, OH) of ethanolamine dissolved in 10ml of methanol is added-：Ti4+4: 1, pH 12-13). Stirring was continued at 60 ℃ for 4h to give a homogeneous, clear solution. Subsequently, the solution is allowed to coolPrecipitating with heptane, centrifuging, dissolving with small amount of ethanol (repeating operation, washing for 3 times) to obtain TiO2And (3) nanoparticles.
(2) Adding TiO into the mixture2Nanoparticles and an appropriate amount of tin nitrate were added to 30ml of methanol to form a solution with a total concentration of 5M, wherein titanium: the molar ratio of tin is 1: 0.5. then dissolved at 60 ℃ with stirring, ethanolamine is added in 5ml of methanol in alkaline solution (molar ratio, OH)-：Sn4+4: 1, pH 12-13). Stirring was continued at 60 ℃ for 4h to give a homogeneous, clear solution.
(3) Subsequently, after the solution was cooled, it was spin coated on the treated substrate using a spin coater and annealed at 350 ℃.
Example 3
Taking titanium chloride, tin chloride, propanol, lithium hydroxide and octane as examples, TiO is described in detail2/SnO2A preparation method of a core-shell nano material.
(1) An appropriate amount of titanium chloride was first added to 50ml of propanol to form a solution with a total concentration of 0.5M. Then dissolved at 80 ℃ with stirring, and added with an alkaline solution of lithium hydroxide dissolved in 10ml of propanol (molar ratio, OH)-：Ti4+4: 1, pH 12-13). Stirring was continued at 80 ℃ for 4h to give a homogeneous, clear solution. Then, after the solution was cooled, it was precipitated with octane, centrifuged, and dissolved with a small amount of ethanol (repeated operation, washing 3 times) to obtain TiO2And (3) nanoparticles.
(2) Adding TiO into the mixture2The nanoparticles and a suitable amount of tin chloride were added to 30ml of ethanol to form a solution with a total concentration of 5M, wherein titanium: the molar ratio of tin is 1: 0.5. then dissolved at 80 ℃ with stirring, and added with an alkaline solution of lithium hydroxide dissolved in 5ml of propanol (molar ratio, OH)-：Sn4+4: 1, pH 12-13). Stirring was continued at 60 ℃ for 4h to give a homogeneous, clear solution.
(3) Subsequently, after the solution was cooled, it was spin coated on the treated substrate using a spin coater and annealed at 350 ℃.
Example 4
A QLED device with positive configuration is shown in FIG. 1, and comprises a substrate from bottom to topThe light-emitting diode comprises a bottom 1, an anode 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5 and a cathode 6. Wherein, the substrate 1 is made of glass sheet, the anode 2 is made of ITO substrate, the hole transport layer 3 is made of TFB, and the electron transport layer 5 is made of TiO2/SnO2The core-shell nano material and the cathode 6 are made of Al.
The preparation method of the QLED device comprises the following steps:
a: firstly, growing a hole transport layer on an anode substrate;
b: then depositing a quantum dot light-emitting layer on the hole transport layer;
c: and finally, depositing an electron transmission layer on the quantum dot light-emitting layer, and evaporating a cathode on the electron transmission layer to obtain the quantum dot light-emitting diode.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. The core-shell nano material is characterized by comprising TiO2Nanoparticle core and cladding on the TiO2SnO on nanoparticle core surface2And (4) shell layer.
2. The core-shell nanomaterial of claim 1, wherein a molar ratio of Ti element to Sn element in the core-shell nanomaterial is 1: (0.05-0.1).
3. The core-shell nanomaterial of claim 1, wherein the core-shell nanomaterial is used as an electron transport layer material for a quantum dot light emitting diode.
4. The preparation method of the core-shell nano material is characterized by comprising the following steps:
providing TiO2Nanoparticles and tin salts;
subjecting the TiO to a reaction2Nano meterDissolving the particles and tin salt in a solvent, and heating under an alkaline condition to obtain a precursor solution;
and annealing the precursor solution to obtain the core-shell nano material.
5. The method of claim 4, wherein the alkaline conditions have a pH of 12 to 13.
6. The method according to claim 4, wherein the ratio of the molar ratio of the Ti element to the Sn element is 1: (0.05-0.1), mixing the TiO with water2The nanoparticles and tin salt are dissolved in a solvent.
7. The method according to claim 4, wherein the temperature of the heat treatment is 60 to 90 ℃.
8. The method as claimed in claim 4, wherein the annealing temperature is 300-350 ℃.
9. The production method according to any one of claims 4 to 8, wherein the tin salt is at least one selected from the group consisting of tin nitrate, tin chloride, tin sulfate, tin methane sulfonate, tin ethane sulfonate and tin propane sulfonate; and/or
The solvent is selected from at least one of isopropanol, ethanol, propanol, butanol and methanol.
10. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer, and the quantum dot light-emitting diode is characterized in that the electron transmission layer is made of the core-shell nano material as claimed in claim 1 or 2.
CN201811149696.9A 2018-09-29 2018-09-29 Core-shell nano material, preparation method thereof and quantum dot light-emitting diode Pending CN110970566A (en)

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CN112164741A (en) * 2020-09-28 2021-01-01 深圳市华星光电半导体显示技术有限公司 Charge transport layer and light emitting device
CN112164741B (en) * 2020-09-28 2022-02-01 深圳市华星光电半导体显示技术有限公司 Charge transport layer and light emitting device

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